CN101620375B - Method for correcting lug photomask pattern - Google Patents
Method for correcting lug photomask pattern Download PDFInfo
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- CN101620375B CN101620375B CN2008101304672A CN200810130467A CN101620375B CN 101620375 B CN101620375 B CN 101620375B CN 2008101304672 A CN2008101304672 A CN 2008101304672A CN 200810130467 A CN200810130467 A CN 200810130467A CN 101620375 B CN101620375 B CN 101620375B
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 66
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000012940 design transfer Methods 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 48
- 238000010586 diagram Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
The invention relates to a method for correcting a lug photomask pattern, including that: a wafer which is provided with a plurality of bonding pads on an active surface is provided; photoresist layer is formed on the active surface of the wafer; a first photomask layer with a first pattern is provided, wherein the first pattern of the first photomask layer is used for limiting the effective areaon the wafer, and the effective area is corresponding to the whole area of the wafer; a primary exposure process is executed, so that the first pattern is transferred onto the photoresist layer; the first photomask layer with the first pattern is substituted by a second photomask layer with a second pattern, and a secondary exposure process is executed, so that the second pattern is transferred onto the photoresist layer, wherein the second pattern of the second photomask layer is used for limiting partial area of the wafer, and partial second pattern is overlapped with partial first pattern; and a developing and etching process is executed to remove the overlapped part of the second pattern and the first pattern, and a plurality of bonding pads on the effective area on the wafer are exposed and partial photoresist layer on the ineffective area on the whole area is removed.
Description
Technical field
The relevant a kind of method that forms projection of the present invention particularly utilizes twice photomask operation to avoid on the invalid chip area of wafer, forming the method for projection about a kind of.
Background technology
In the photolithography in semiconductor operation, aim at exposure machine (Mask aligner) and can carry out the aligning and the exposure of entire wafer.Because be the full sheet width of cloth, need only when making photomask again, all invalid chips cover and get final product.But for example photoresist profile, alignment error and high ratio of defects are its shortcomings to the performance of aligning exposure machine.Yet; Step-by-step movement is aimed at exposure machine (stepper aligner) when making photomask; Golden projection can't be designed into all invalid chips are covered, so in the operation of carrying out follow-up electrogilding projection, partly can be formed on the invalid chip; In technological process, all can these golden projections that is formed on the invalid chip be removed, result in waste technology cost.
Summary of the invention
In view of above problem, fundamental purpose of the present invention is to provide a kind of method of correcting lug photomask pattern, so as to utilizing the mode of twice photomask, can limit the effective coverage of wafer, makes projection can be formed on the effective coverage of wafer.
According to above-mentioned purpose, the present invention discloses a kind of method of correcting lug photomask pattern, comprises: a wafer is provided, has a plurality of weld pads on the one of which active surface; Form a photoresist layer on the active surface of wafer; The first photomask layer with first pattern is provided, and at this, first pattern of the first photomask layer is in order to limiting the effective coverage on the wafer, and the effective coverage is the Zone Full corresponding to wafer; Carry out one first exposure process, make and win design transfer to the photoresist layer; The second photomask layer to have second pattern replaces the first photomask layer with first pattern; And carry out second exposure process; Make on second design transfer to the photoresist layer; At this, second pattern of the second photomask layer is regional in order to the part that limits wafer, and partly second pattern overlaps with part first pattern; And carry out one and develop and etching step, removing the overlapping part of second pattern and first pattern, and expose at a plurality of weld pads on the effective coverage on the wafer and remove the photic resist layer of part on the inactive area at Zone Full.
The present invention also discloses a kind of correcting lug photomask pattern that utilizes to form the method for projection, comprises: a wafer is provided, has a plurality of weld pads on the one of which active surface; Form a photoresist layer on wafer to cover active surface; The first photomask layer with first pattern is provided, and be in order to limiting the effective coverage on the wafer at first pattern of this first photomask layer, and the effective coverage is the Zone Full corresponding to wafer; Carry out one first exposure process, make and win design transfer to the photoresist layer; The second photomask layer to have second pattern replaces the first photomask layer with first pattern; And carry out second exposure process; Make second design transfer to the photoresist layer; At this, second pattern of the second photomask layer is the Zone Full in order to the qualification wafer, and partly second pattern overlaps with part first pattern; Carry out one and develop and etching step, removing the overlapping part of second pattern and first pattern, and expose a plurality of weld pads on the effective coverage on the wafer and remove the photic resist layer of part on an inactive area of Zone Full; Form a plurality of projections on respect to a plurality of weld pads that exposed to the open air on the wafer; And remove this photoresist layer.
Description of drawings
Below conjunction with figs. is carried out detailed description to preferred embodiment of the present invention so that can be to the object of the invention, structure, characteristic and function thereof are had further understanding, wherein:
The technology that Fig. 1 is according to the present invention to be disclosed is illustrated in the synoptic diagram that forms the photoresist layer on the wafer;
The technology that Fig. 2 is according to the present invention to be disclosed is illustrated in the wafer top with photoresist layer, forms to have the first photomask layer of first pattern, and carries out the synoptic diagram of first exposure process;
The technology that Fig. 3 is according to the present invention to be disclosed is represented the synoptic diagram of first design transfer of the first photomask layer to the photoresist layer;
The technology that Fig. 4 is according to the present invention to be disclosed is illustrated on the wafer of the photoresist layer that has made public, forms to have the second photomask layer of second pattern, and carries out the synoptic diagram of second exposure process;
The technology that Fig. 5 is according to the present invention to be disclosed is represented the synoptic diagram of second design transfer of the second photomask layer to the photoresist layer that has made public;
The technology that Fig. 6 is according to the present invention to be disclosed exposes the synoptic diagram of the effective coverage on the active surface of wafer;
The technology that Fig. 7 is according to the present invention to be disclosed is illustrated in the synoptic diagram that forms a plurality of golden projections on the active surface of the wafer that exposes to the open air; And
The technology that Fig. 8 is according to the present invention to be disclosed is illustrated in the synoptic diagram that forms a plurality of golden projections on the wafer.
Embodiment
The present invention is a kind of method of revising the photomask pattern of projection in this direction of inquiring into, is to utilize twice photomask and cooperate positive photoresist, makes projection only be formed on the method on the effective coverage of wafer.In order to understand the present invention up hill and dale, detailed step and composition thereof will be proposed in following description.At this, the detailed step that well-known projection is formed on back segment operations such as mode and the chip thinning of chip is not described in the details, with the restriction of avoiding causing the present invention unnecessary.Yet, for preferred embodiment of the present invention, can describe in detail as follows, yet except these were described in detail, the present invention can also be implemented among other the embodiment widely, and scope of the present invention constrained not, its with after claim be as the criterion.
With reference to figure 1, be to be illustrated in the synoptic diagram that forms a photoresist layer on the wafer.In Fig. 1, be that a wafer 10 is provided earlier, it has an active surface 101 and a back side 102.Then, utilize semiconductor process, on wafer 10, form the active surface 101 of a photoresist layer 20 to cover wafer 10.In this embodiment, photoresist layer 20 is positive photoresists, and its characteristic is after exposure, makes that photoresist can be by developer dissolves.
Then, with reference to figure 2, be to be illustrated in wafer top with photoresist layer, formation has the first photomask layer of first pattern, and carries out the synoptic diagram of first exposure process.At first, the first photomask layer 30 with first pattern 300 is provided and is formed on photoresist layer 20 top, at this, first pattern 300 on the first photomask layer 30 is in order to limit the Zone Full on photoresist layer 20.Then, carrying out first exposure process 40, is the mode of utilizing ultraviolet light (UV light) irradiation exposure, and first pattern 300 on first photomask 30 is transferred on the photoresist layer 20 of wafer 10 tops, as shown in Figure 3.At this, first exposure process 40 comprises: provide a photomask to aim at exposure machine (mask aligner) (expression in the drawings) and have above the first photomask layer 30 of first pattern 300; Then, photomask is aimed at the exposure machine aligning and have first photomask 30 of first pattern 300 and wafer 10 with photoresist layer 20; Carry out ultraviolet light (UV light) irradiation exposure, first pattern 300 of the photomask 30 of winning is transferred on the photoresist layer 20; At this; First pattern 300 of first photomask 30 is in order to limit the first area 210 on photoresist layer 20; This first area 210 is corresponding to the effective coverage 210 on the active surface 101 of wafer 10, and its effective coverage 210 is to be illustrated in that each can form the projection zone of (end is represented in the drawings) on the wafer 10.
And then, with reference to figure 4, be to be illustrated on the wafer of the photoresist layer that has made public, formation has the second photomask layer of second pattern, and carries out the synoptic diagram of second exposure process.In Fig. 4, be the second photomask layer 32 with second pattern 320 to be replaced the first photomask layer 30 with first pattern 300 be formed on wafer 10 tops with the photoresist layer 20 that has made public.Then, carry out second exposure process 50, utilize the UV-irradiation exposure, make second pattern 320 of the second photomask layer 32 be transferred on the photoresist layer 20 that has made public, as shown in Figure 5.At this, the UV-irradiation exposure energy of first exposure process is lower than the UV-irradiation exposure energy of second exposure process.
In addition, second exposure process 50 also comprises: provide a stepper (stepper) (expression) in the drawings to have above the second photomask layer 32 of second pattern 320; Carry out UV-irradiation exposure, make second pattern of the second photomask layer 32 throw and transfer on the photoresist layer 20 that has made public that making has first pattern 300 and second pattern 320 on the photoresist layer 20 by the mode of projection; At this, second pattern 320 of the second photomask layer 32 is in order to limit the second area 220 on photoresist layer 20, the Zone Full on the active surface 101 that this second area 220 is corresponding wafers 10.In this embodiment; The mode of utilizing stepper to make public is effective coverage or the inactive area that is regardless of on the active surface 101 of wafer 10; Be to make public on the photoresist layer 20 that has made public partly through UV-irradiation with the mode of block of cells; Make the exposure of entire wafer 10 need pass through tens of times repeatability and with the exposure of a block of a block; Step of exposure that just can entire wafer 10 is required are accomplished, therefore, have zone partly be with first time exposure process in the zone overlapping.
Then; Carry out one and develop and etching step, when at first developing, because the inactive area on the photoresist layer 20 is only carried out single exposure; So when carrying out development step; Can't remove photoresist layer 20 fully, and effective coverage (being that first area 210 is regional with the overlapping of second area 220) is through double exposure, so when carrying out development step through single exposure; Can remove by neutralization reaction with wafer 10 surfaces partly through the photoresist layer 20 of double exposure.
And then, carrying out also comprising a baking procedure before the etching step, the purpose of this baking procedure be further with in the photoresist layer 20 residual solvent, borrowing evaporation and dropping to minimum.Next be to carry out etching step, be to remove first pattern and second pattern overlapping part on the photoresist layer, and expose the effective coverage on the active surface 101 of wafer 10, as shown in Figure 6.
Then, continue to utilize photoresist layer 20, on the active surface 101 of the wafer that exposes to the open air 10, form a metal level 60 as screen layer (hard mask layer); Then, utilize the mode of grinding to remove the metal level 60 on photoresist layer 20 again; At last, remove photoresist layer 20, to form a plurality of metal couplings 601 on wafer 10, as shown in Figure 7.In this embodiment, metal coupling 601 can be golden projection, and its generation type comprises: at first on the active surface 101 of the wafer that has exposed to the open air 10, form a crystal seed layer (seed layer) (not expression in the drawings), the particularly crystal seed layer of gold; Then utilize the mode of electroplating,, remove photoresist layer 20 at last again to form the gold layer to fill up the active surface 101 of the wafer 10 that has exposed to the open air, to form a plurality of golden projections on wafer 10, as shown in Figure 8.
Can obtain by the above embodiments, utilize the mode of double exposure, can avoid being formed on the inactive area of wafer, and golden projection only can be formed on the effective coverage of wafer, to reduce the process cost of golden projection at metal coupling.
Though the present invention discloses as above with aforesaid preferred embodiment; Yet it is not in order to limit the present invention; Anyly be familiar with present technique person; Do not breaking away from the spirit and scope of the present invention, when can making all changes that is equal to or replacement, therefore scope of patent protection of the present invention must be looked being as the criterion that the appended the application's claim scope of this instructions defined.
Claims (8)
1. the method for a correcting lug photomask pattern comprises:
One wafer is provided, has an active surface and a back side;
Form a photoresist layer on this active surface of this wafer;
Provide one have first pattern the first photomask layer, wherein this first pattern of this first photomask layer is in order to limiting the first area on this photoresist layer, this first area is corresponding to the effective coverage on this active surface of wafer;
Carry out one first exposure process, make this first design transfer to this photoresist layer;
With one have second pattern the second photomask layer replace the first photomask layer with this first pattern; And carry out one second exposure process; Make this second design transfer to this photoresist layer; Wherein this second pattern of this second photomask layer is in order to limiting the second area on this photoresist layer, the Zone Full on this active surface of the corresponding wafer of this second area, and the dosage of this second exposure process is greater than the dosage of this first exposure process;
Carry out one and develop and etching step, removing the overlapping part of this second pattern and this first pattern, and expose this effective coverage on this wafer and remove this photoresist layer of part on an inactive area of this Zone Full; And
Wherein the overlapping of first area and second area zone is through double exposure, and this inactive area is only carried out single exposure on its corresponding photoresist layer.
2. method according to claim 1 is characterized in that this photoresist layer is positive photoresist.
3. method according to claim 1, it is characterized in that carrying out this first exposure process is to utilize photomask to aim at exposure machine.
4. method according to claim 1, it is characterized in that carrying out this second exposure process is to utilize stepper.
5. one kind is utilized correcting lug photomask pattern to form the method for projection, comprises:
One wafer is provided, has an active surface and a back side, and on this active surface, have a plurality of weld pads;
Form a photoresist layer on this wafer to cover this active surface;
Provide one have first pattern the first photomask layer, wherein this first pattern of this first photomask layer is in order to limiting the first area on this photoresist layer, this first area is corresponding to the effective coverage on this active surface of wafer;
Carry out one first exposure process, make this first design transfer to this photoresist layer;
With one have second pattern the second photomask layer replace the first photomask layer with this first pattern; And carry out one second exposure process; Make this second design transfer to this photoresist layer; Wherein this second pattern of this second photomask layer is in order to limit the second area on this photoresist layer; Zone Full on this active surface of the corresponding wafer of this second area, and partly this second pattern overlaps with this first pattern of part, and the energy of this second exposure process is greater than the energy of this first exposure process;
Carrying out one develops and etching step; With the overlapping that removes this second pattern and this first pattern on this photoresist layer partly, and expose on this wafer with respect to these weld pads of this effective coverage and remove this photoresist layer of part on an inactive area of this Zone Full;
Form a plurality of projections on respect to these weld pads that exposed to the open air on this wafer;
Remove this photoresist layer; And
Wherein the overlapping of first area and second area zone is through double exposure, and this inactive area is only carried out single exposure on its corresponding photoresist layer.
6. method according to claim 5 is characterized in that this photoresist layer is positive photoresist.
7. method according to claim 5, it is characterized in that carrying out this first exposure process is to utilize photomask to aim at exposure machine.
8. method according to claim 5, it is characterized in that carrying out this second exposure process is to utilize stepper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101304672A CN101620375B (en) | 2008-07-04 | 2008-07-04 | Method for correcting lug photomask pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101304672A CN101620375B (en) | 2008-07-04 | 2008-07-04 | Method for correcting lug photomask pattern |
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| Publication Number | Publication Date |
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| CN101620375A CN101620375A (en) | 2010-01-06 |
| CN101620375B true CN101620375B (en) | 2012-02-08 |
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| CN2008101304672A Active CN101620375B (en) | 2008-07-04 | 2008-07-04 | Method for correcting lug photomask pattern |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9817927B2 (en) * | 2015-08-31 | 2017-11-14 | Globalfoundries Inc. | Hard mask etch and dielectric etch aware overlap for via and metal layers |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1254183A (en) * | 1998-11-13 | 2000-05-24 | 国际商业机器公司 | Self-alignment process capable of making subcritical contact with wire |
| CN1472599A (en) * | 2002-08-02 | 2004-02-04 | 联华电子股份有限公司 | Photoetching process with multilayer photoresist layer application |
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2008
- 2008-07-04 CN CN2008101304672A patent/CN101620375B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1254183A (en) * | 1998-11-13 | 2000-05-24 | 国际商业机器公司 | Self-alignment process capable of making subcritical contact with wire |
| CN1472599A (en) * | 2002-08-02 | 2004-02-04 | 联华电子股份有限公司 | Photoetching process with multilayer photoresist layer application |
Non-Patent Citations (3)
| Title |
|---|
| JP昭58-078152A 1983.05.11 |
| JP特开2007-272046A 2007.10.18 |
| JP特开平1-315927A 1989.12.20 |
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| CN101620375A (en) | 2010-01-06 |
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