CN101989035A - Method for removing chromium metal film from photographic mask - Google Patents
Method for removing chromium metal film from photographic mask Download PDFInfo
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- CN101989035A CN101989035A CN2009100558341A CN200910055834A CN101989035A CN 101989035 A CN101989035 A CN 101989035A CN 2009100558341 A CN2009100558341 A CN 2009100558341A CN 200910055834 A CN200910055834 A CN 200910055834A CN 101989035 A CN101989035 A CN 101989035A
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- metal film
- chromium metal
- photoresist layer
- phase deviation
- reaction chamber
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Abstract
The invention relates to a method for removing a chromium metal film from a photographic mask, comprising quartz substrate, and a phase deviation film and a chromium metal film which are plated on the quartz substrate in sequence. The method comprises the following steps of pattening figures of the photographic mask after coating a first photoetching glue layer on the chromium metal film; using the pattened photoetching glue layer as a protective layer to etch the chromium metal film so as to form photographic mask figures, and removing the first photoetching glue layer; using the chromium metal film as the protective layer to , etch the phase deviation film with a dry method so as to form phase deviation photographic mask figures; pattening figures required by the chromium metal film after coating a second photoetching glue layer on the chromium metal film and the phase deviation film; using the pattened second photoetching glue layer as the protective layer to etch the chromium metal film with a wet method to form figures required by the chromium metal film, then using the pattened second photoetching glue layer as the protective layer to etch the remained chromium metal film with the dry method, and removing the photoetching glue layer. The invention completely removes the chromium metal film from the photographic mask without consuming much time and cost.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of chromium metal film removal method of photomask.
Background technology
In the processing procedure of semiconductor devices, it is photoetching that a step is arranged.The essence of photoetching is exactly will carry out on the wafer bottom film of etch step and ion implantation step after circuit structure is copied to.Circuit structure at first is produced on graphic form on the quartz base plate of photomask by name with the ratio of 1: 4 or 1: 5, ultraviolet light by this photomask with figure transfer to the photoresist layer of wafer, after developing, with follow-up etch step with pattern imaging on the wafer bottom film, perhaps finish the selectable doping in graphics field of wafer bottom film with follow-up ion implantation step.
In lithography step, ultraviolet light arrives figure transfer by photomask the photoresist layer of wafer substrate.Therefore, just need on photomask, make figure.At present main photomask type has two types of binary intensity photomask and attenuation type phase deviation photomasks.
Development along with photoetching technique, the pattern character size of photoetching (CD) becomes more and more littler, borderline region to figure divides the requirement of variability also more and more higher, if but adopt the binary intensity photomask to make, because the effect of optical diffraction, the readability of the borderline region when light mask pattern exposes to wafer substrate does not reach requirement, causes follow-up etch step or follow-up ion implantation step deviation to occur, thereby causes the making failure of device.Therefore, attenuation type phase deviation photomask occurs, on this attenuation type phase deviation photomask, also comprised one deck phase deviation film, be used to make light mask pattern.When photolithographic exposure, the phase deviation film absorbs the borderline part light of exposure light mask pattern, thereby makes the readability on exposure light mask pattern border increase.
Particularly, the substrate of attenuation type phase deviation photomask comprises: quartz base plate, be plated on the quartz base plate as the semi-transparent molybdenum silicide (MoSi) of phase deviation film and be plated on lighttight chromium metal film on the phase deviation film.In manufacturing process, similar with the method for making of binary intensity photomask, form light mask pattern at the chromium metallic diaphragm; Then, be protective seam with this chromium metal film with light mask pattern, behind the dry etching MoSi, wet method is removed the chromium metal film, forms phase deviation decay figure on quartz base plate, the light mask pattern of attenuation type phase deviation just; At last, clean again with fault detection etc. after, a bonding framework on the quartz base plate with phase deviation decay figure, bonding one deck covers after the light transmission film of phase deviation decay figure on framework, has finished the making of attenuation type phase deviation photomask.
In conjunction with the making diagrammatic cross-section of the prior art attenuation type phase deviation photomask shown in Fig. 1 a～1i, be elaborated to how making attenuation type phase deviation photomask.
Step 1, on the quartz base plate 100 that is coated with MoSi film 101 and chromium metal film 102, coating photoresist layer 103, as shown in Figure 1a;
In this step, MoSi film 101 is exactly the phase deviation film;
Step 2 is carried out patterned process to photoresist layer 103, light mask pattern is transferred on the photoresist layer 103, shown in Fig. 1 b;
In this step, carrying out patterned process exposes to photoresist layer 103 exactly and develops;
Step 3 as protective seam, is carried out dry etching to chromium metal film 102 with the light mask pattern on the photoresist layer 103, forms light mask pattern on chromium metal film 102, shown in Fig. 1 c;
Step 4 is removed photoresist layer 103, shown in Fig. 1 d;
Step 5 as protective seam, is carried out dry etching to MoSi film 101 with the light mask pattern that forms on the chromium metal film 102, forms the phase deviation light mask pattern on MoSi film 101, shown in Fig. 1 e;
Step 6, coating photoresist layer 104 covers MoSi film 101 and chromium metal film 102, shown in Fig. 1 f on the structure shown in Fig. 1 e;
Step 7 is carried out patterned process to photoresist layer 104, with figure transfer to photoresist layer 104, shown in Fig. 1 g;
In this step, the figure of the figure that obtains for forming at chromium metal film 102, this graphics field is greater than the phase deviation light mask pattern, in order that in the process of post-exposure wafer substrate, do not block the phase deviation light mask pattern and exists as the frequency modulated light layer in the wafer substrate exposure process;
Step 8 as protective seam, is carried out wet etching to chromium metal film 102 with the figure on the photoresist layer 104, removes the chromium metal film 102 on the phase deviation light mask pattern, exposes the phase deviation light mask pattern that step 5 forms, shown in Fig. 1 h;
Step 9 is removed photoresist layer 104, shown in Fig. 1 i, finishes the making of phase deviation light mask pattern.
Adopt wet method to remove in the process of chromium metal film 102 in step 8, carry out solvent cleaning in the cleaning machine to remove previous reaction residue or airborne pollutant owing to after step 5, need this quartz base plate put into.During this period of time, reaction residue on the chromium metal film 102 or airborne pollutant may not washed fully, cause occurring on the chromium metal film 102 surface chemical property after perhaps the purity of cleaning solvent or character change and change or new pollutant.In addition, clean later before step 6 coating second photoresist layer 104, airborne volatile organic matter (VOC) or contaminant particle are dense, then VOC or contaminant particle can be promptly attached to the surface of chromium metal film 102.Have, byproduct of reaction can't be removed rapidly etc. in the process of carrying out step 8 again.Like this, when chromium metal film 102 is immersed in the solvent when adopting wet method to remove, then because the surface chemical property of chromium metal film 102 changes or the existence of VOC or contaminant particle or etching reaction accessory substance, the feasible solvent that adopts wet method is fully removed chromium metal film 102 (shown in Fig. 1 i).
If chromium metal film 102 can't be removed totally, then can influence made light mask pattern, cause this photomask of following adopted that wafer substrate is exposed after, the figure that obtains is inaccurate, influences wafer manufacturing.
Therefore, for chromium metal film 102 is removed clean, further need secondary treating: adopt the checking machine that penetrates light and reflected light combination (BMSL) to detect to each sheet photomask, when the chromium metal film 102 that detects certain a slice photomask is not removed when clean, then again behind coating photoresist layer on the chromium metal film 102 of this photomask, photoresist layer is carried out patterned process, figure transfer is arrived photoresist layer; Then, with the figure on the photoresist layer as protective seam, the chromium metal film 102 of this photomask is carried out dry etching or the manual etching of wet method, remove the chromium metal film 102 on the phase deviation light mask pattern of this photomask, expose the phase deviation light mask pattern that step 5 forms; Once more, remove photoresist layer; At last, adopt the checking machine of BMSL to detect whether chromium metal film 102 is removed clean,, repeat said process once more if do not remove totally.
Though it is clean that this method can be removed chromium metal film 102,, can expend a large amount of time and cost.Illustrate, at present, in the process of making light mask pattern, the chromium metal film 102 of nearly about 25% photomask is not removed clean, and need carry out secondary treating.
Summary of the invention
In view of this, the invention provides a kind of chromium metal film removal method of photomask, this method can be removed the chromium metal film of photomask clean under the prerequisite that does not expend a large amount of time and cost.
For achieving the above object, the technical scheme of the embodiment of the invention specifically is achieved in that
A kind of chromium metal film removal method of photomask, described photomask comprise quartz base plate and are plated in phase deviation film and chromium metal film on the quartz base plate successively that this method comprises:
Behind coating first photoresist layer on the chromium metal film, carry out the patterning of light mask pattern;
As protective seam, etching chromium metal film forms light mask pattern, removes first photoresist layer with the photoresist layer of patterning;
As protective seam, dry etching phase deviation film forms the phase deviation light mask pattern with the chromium metal film;
Behind coating second photoresist layer on chromium metal film and the phase deviation film, carry out the patterning of the required figure of chromium metal film;
With second photoresist layer of patterning as protective seam, after wet etching chromium metal film forms the required figure of chromium metal film, again with second photoresist layer of patterning as protective seam, the chromium metal film that dry etching is residual is removed photoresist layer.
Described again with second photoresist layer of patterning as protective seam, dry etching chromium metal film is finished at reaction chamber.
The dry etching chromium metal film gas that described reaction chamber feeds is chlorine, oxygen and helium.
The dosage that described chlorine feeds reaction chamber is 20～200 ml/min;
The dosage that described oxygen feeds reaction chamber is 1～100 ml/min;
The dosage that described helium feeds reaction chamber is 1～100 ml/min.
The pressure of described reaction chamber is 6～10 millitorrs; Vertical radio-frequency power scope in the reaction chamber is 10～500 watts; Horizontal radio-frequency power scope in the reaction chamber is 400～800 watts.
As seen from the above technical solution; the method that the present invention adopts is being carried out wet etching to the chromium metal film; after removing the chromium metal film on the phase deviation light mask pattern; before removing photoresist layer; also further comprise: as protective seam, the chromium metal film is carried out dry etching with the figure on the photoresist layer.Like this, need carry out again carrying out complicated secondary treating more again after the photomask of chromium metal film is removed in secondary treating with regard to not needing to detect, thereby under the prerequisite that does not expend a large amount of time and cost, remove the chromium metal film of photomask clean.
Description of drawings
The making diagrammatic cross-section of the prior art attenuation type phase deviation photomask shown in Fig. 1 a～1i;
Fig. 2 is the making process flow diagram of attenuation type phase deviation photomask provided by the invention;
Fig. 3 is an attenuation type phase deviation photomask diagrammatic cross-section provided by the invention.
Embodiment
For making purpose of the present invention, technical scheme and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, the present invention is described in further detail.
In order under the prerequisite that does not expend a large amount of time and cost, to remove the chromium metal film of photomask clean; the present invention to all photomasks in manufacture craft; all increase a step; promptly the chromium metal film is being carried out wet etching; after removing the chromium metal film on the phase deviation light mask pattern; before removing photoresist layer, also further comprise: as protective seam, the chromium metal film is carried out dry etching with the figure on the photoresist layer.
Because it is clean to adopt this method the chromium metal film on all photomasks can be removed, so again the photomask with light mask pattern is carried out secondary treating with regard to not needing, thereby under the prerequisite that does not expend a large amount of time and cost, removes the chromium metal film of photomask clean.
Fig. 2 is the making process flow diagram of attenuation type phase deviation photomask provided by the invention, and its concrete steps are:
In this step, the figure of the figure that obtains for forming at chromium metal film 102, this graphics field is greater than the phase deviation light mask pattern, in order that in the process of post-exposure wafer substrate, do not block the phase deviation light mask pattern and exists as the frequency modulated light layer in the wafer substrate exposure process;
From the process of step 201～step 208, same as the prior art.
Step 209, with the figure on the photoresist layer 104 as protective seam, chromium metal film 102 is carried out dry etching, remove the chromium metal film 102 on the phase deviation light mask pattern once more;
In this step, when carrying out dry etching, this photomask is placed in the reaction chamber, adopt the gas of dry etching to comprise chlorine, oxygen and helium, three kinds of reacting gas become plasma electric slurry under the effect of radio-frequency current in reaction chamber, and carry out chemical reaction with chromium metal film 102, obtain chromium chloride after, be carried to outside the reaction chamber by bleeding;
In addition, plasma electric slurry in reaction chamber also can carry out physical reactions with chromium metal film 102, because ionic group can bombard effect to the surface of chromium metal film 102, by the synergy of physics and chemical reaction, even can powerfully remove the residual chromium metal film 102 that surface chemical property changes;
In this step, the flow of chlorine feeding reaction chamber is 20～200 ml/min; The flow that oxygen feeds reaction chamber is 1～100 ml/min; The flow that helium feeds reaction chamber is 1～100 ml/min; The pressure of reaction chamber is 6～10 millitorrs; Vertical radio-frequency power (RF1) scope in the reaction chamber is 10～500 watts; Horizontal radio-frequency power (RF2) scope in the reaction chamber is 400～800 watts;
In this step, the light mask pattern of removing ten thousand photoresist layers 104 as shown in Figure 3, as can be seen, essentially no residual chromium metal film 102.
Can draw through test, photomask adopts method provided by the invention, the chromium metal film 102 of 100% noresidue.
More than lift preferred embodiment; the purpose, technical solutions and advantages of the present invention are further described; institute is understood that; the above only is preferred embodiment of the present invention; not in order to restriction the present invention; within the spirit and principles in the present invention all, any modification of being done, be equal to and replace and improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. the chromium metal film removal method of a photomask, described photomask comprise quartz base plate and are plated in phase deviation film and chromium metal film on the quartz base plate successively that this method comprises:
Behind coating first photoresist layer on the chromium metal film, carry out the patterning of light mask pattern;
As protective seam, etching chromium metal film forms light mask pattern, removes first photoresist layer with the photoresist layer of patterning;
As protective seam, dry etching phase deviation film forms the phase deviation light mask pattern with the chromium metal film;
Behind coating second photoresist layer on chromium metal film and the phase deviation film, carry out the patterning of the required figure of chromium metal film;
With second photoresist layer of patterning as protective seam, after wet etching chromium metal film forms the required figure of chromium metal film, again with second photoresist layer of patterning as protective seam, the chromium metal film that dry etching is residual is removed photoresist layer.
2. the method for claim 1 is characterized in that, described again with second photoresist layer of patterning as protective seam, dry etching chromium metal film is finished at reaction chamber.
3. method as claimed in claim 2 is characterized in that, the dry etching chromium metal film gas that described reaction chamber feeds is chlorine, oxygen and helium.
4. method as claimed in claim 3 is characterized in that, the dosage that described chlorine feeds reaction chamber is 20～200 ml/min;
The dosage that described oxygen feeds reaction chamber is 1～100 ml/min;
The dosage that described helium feeds reaction chamber is 1～100 ml/min.
5. as claim 2,3 or 4 described methods, it is characterized in that the pressure of described reaction chamber is 6～10 millitorrs; Vertical radio-frequency power scope in the reaction chamber is 10～500 watts; Horizontal radio-frequency power scope in the reaction chamber is 400～800 watts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100558341A CN101989035B (en) | 2009-08-03 | 2009-08-03 | Method for removing chromium metal film from photographic mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100558341A CN101989035B (en) | 2009-08-03 | 2009-08-03 | Method for removing chromium metal film from photographic mask |
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| Publication Number | Publication Date |
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| CN101989035A true CN101989035A (en) | 2011-03-23 |
| CN101989035B CN101989035B (en) | 2012-02-08 |
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| CN2009100558341A Expired - Fee Related CN101989035B (en) | 2009-08-03 | 2009-08-03 | Method for removing chromium metal film from photographic mask |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104914663A (en) * | 2014-03-11 | 2015-09-16 | 中芯国际集成电路制造(上海)有限公司 | Photomask production method |
| CN109557761A (en) * | 2018-12-07 | 2019-04-02 | 深圳市华星光电半导体显示技术有限公司 | Exposure mask board manufacturing method |
| CN111487844A (en) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | Photoetching plate surface damage repairing solution and application thereof |
| CN113572020A (en) * | 2021-07-15 | 2021-10-29 | 河南仕佳光子科技股份有限公司 | Semiconductor laser chip surface protection method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7375038B2 (en) * | 2005-09-28 | 2008-05-20 | Applied Materials, Inc. | Method for plasma etching a chromium layer through a carbon hard mask suitable for photomask fabrication |
| CN101054673B (en) * | 2006-04-14 | 2014-04-30 | 应用材料公司 | Light shield plasma etching method using protective cover |
| US7754394B2 (en) * | 2006-11-14 | 2010-07-13 | International Business Machines Corporation | Method to etch chrome for photomask fabrication |
| KR100907887B1 (en) * | 2007-10-22 | 2009-07-15 | 주식회사 동부하이텍 | Method for manufacturing halftone phase shift mask |
-
2009
- 2009-08-03 CN CN2009100558341A patent/CN101989035B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104914663A (en) * | 2014-03-11 | 2015-09-16 | 中芯国际集成电路制造(上海)有限公司 | Photomask production method |
| CN104914663B (en) * | 2014-03-11 | 2020-01-07 | 中芯国际集成电路制造(上海)有限公司 | Photomask manufacturing method |
| CN109557761A (en) * | 2018-12-07 | 2019-04-02 | 深圳市华星光电半导体显示技术有限公司 | Exposure mask board manufacturing method |
| CN111487844A (en) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | Photoetching plate surface damage repairing solution and application thereof |
| CN111487844B (en) * | 2019-01-29 | 2023-07-18 | 山东浪潮华光光电子股份有限公司 | Solution for repairing surface damage of lithography plate and application thereof |
| CN113572020A (en) * | 2021-07-15 | 2021-10-29 | 河南仕佳光子科技股份有限公司 | Semiconductor laser chip surface protection method |
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| CN101989035B (en) | 2012-02-08 |
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