CN101634805B - Peripheral shading mask structure used for manufacturing semiconductor wafer and manufacturing method thereof - Google Patents
Peripheral shading mask structure used for manufacturing semiconductor wafer and manufacturing method thereof Download PDFInfo
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- CN101634805B CN101634805B CN200810041066XA CN200810041066A CN101634805B CN 101634805 B CN101634805 B CN 101634805B CN 200810041066X A CN200810041066X A CN 200810041066XA CN 200810041066 A CN200810041066 A CN 200810041066A CN 101634805 B CN101634805 B CN 101634805B
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Abstract
The invention discloses a method for manufacturing a peripheral shading mask structure used for manufacturing a semiconductor wafer. The method comprises the following steps: providing a substrate which comprises an opaque layer covering the substrate, a covered negative photoresist layer, a stop layer covering the negative photoresist layer and a positive photoresist layer covering the stop layer; patterning the positive photoresist layer to form one or more windows in the positive photoresist layer; removing the exposed stop layer in the one or more windows, exposing a part of negative photoresist layer and patterning the negative photoresist layer of the exposed part; developing the negative photoresist layer of the exposed part, removing the opaque layer of the exposed part, and exposing the lower partial substrate; and removing the negative photoresist layer, the stop layer and the positive photoresist layer of any residual part, and providing a patterned mask. The patterned mask is used for manufacturing an integrated circuit. The invention also provides the peripheral shading mask structure used for manufacturing the semiconductor wafer.
Description
Technical field
The present invention relates to integrated circuit and be used for the technology that semiconductor devices is made.More particularly; The present invention provides a kind of manufacturing approach that is used to make the mask of advanced integrated circuit, and said advanced integrated circuit for example is dynamic RAM spare, SRAM spare (SRAMs), special IC device (ASICs), microprocessor and microcontroller, flush memory device and other device.
Background technology
Integrated circuit or " IC " make hundreds of interconnect devices from single silicon and develop into up to a million devices.Current IC provides performance and the complexity that can imagine originally head and shoulders above.Be the increase of implementation complexity and current densities (for example, the quantity of the device that on given chip area, can place), the characteristic dimension of minimum device is also referred to as " physical dimension " of device, along with each becomes littler for IC.Semiconductor devices is now just with the characteristic manufacturing less than 1/4th microns.
The current densities that increases not only can improve complexity and the performance of IC, and more low cost components is provided for the consumer.The IC manufacturing equipment need spend millions of even multi-million dollar is built.Each manufacturing equipment has certain chip yield, and the IC of some is arranged on each wafer.Thereby, make littler that the individual devices of IC makes, can on each wafer, more device can be made, thereby the output of manufacturing equipment can be improved.Owing to be used to make each operation of IC the limit is arranged all, it is very challenging making littler device.That is to say that given technology all has the lower limit of a characteristic dimension, in case be lower than this lower limit, the domain of manufacturing process or device just needs to revise.
The example of a this restriction is the manufacturing capacity that is applied to the mask in the photoetching that integrated circuit makes.Mask commonly used is called as phase-shift mask.Phase-shift mask is used to print several microns characteristic dimension from the interference figure of light source and positive photoetching rubber.Regrettably, the difficult technique of existing manufacturing phase-shift mask is to carry out with high-level efficiency and accurate way.For example, negative photoresist has been applied to the mask of manufacturing feature size less than 0.18 micron device.Although negative photoresist performance is superior to positive photoetching rubber, what the process time can be longer is many.Normally, 30 to 60 percent negative photoresist will be made public, and this has further increased the process time.In addition, existing processes seems trouble and can in mask self, cause quality problems.The whole instructions of the present invention particularly hereinafter is described these and other restriction.
Can find out by above, need a kind of improved technology that is used for the processing semiconductor device.
Summary of the invention
According to the present invention, a kind of method that is used for producing the semiconductor devices is provided.More especially; The present invention provides a kind of method of making photo etched mask; Said mask is used to make advanced integrated circuit, for example dynamic RAM spare, SRAM spare (SRAMs), special IC device (ASICs), microprocessor and microcontroller, flush memory device and other device.
In a concrete embodiment, the present invention provides a kind of method that is used to make the mask of IC-components.Described method comprises provides substrate, for example glass plate.Said substrate comprise the opaque layer that covers said substrate, covering negative photoresist layer, cover stopping layer (for example, insulation course) and covering the said positive photoresist layer that stops layer of said negative photoresist layer.These layers form sandwich structure.Said method is followed the said positive photoresist layer of patterning, in said positive photoresist layer, forms one or more windows, simultaneously the negative photoresist layer below the etching stop layer protection.Preferably, the time shutter of positive photoetching rubber is opened predetermined window.Said method removes the layer that stops that being exposed in one or more window openings, the negative photoresist layer of expose portion, and the negative photoresist layer of the said expose portion of patterning.Described method comprise the said expose portion that develops negative photoresist layer step and remove the opaque layer of expose portion, expose the substrate of lower part.Said method comprises the negative photoresist layer that removes any remainder, stops layer and positive photoresist layer, and the mask of the patterning that uses the part opaque layer is provided.Alternatively, the positive photoresist layer of said patterning was removed before the said negative photoresist layer of patterning.
In an optional specific embodiment, the present invention provides a kind of method of making IC-components.Said method comprises provides substrate, and said substrate comprises the opaque layer that covers this substrate.Said system also have covering negative photoresist layer, cover stopping layer, covering the said positive photoresist layer that stops layer of said negative photoresist layer.Said method comprises the said positive photoresist layer of patterning, in said positive photoresist layer, forms one or more windows.Said method also comprises the layer that stops of the exposure that removing in described one or more window, and expose portion is born photoresist layer, and the negative photoresist layer of the said exposed portions of patterning.Said method comprises the negative photoresist layer of the said exposed portions of developing, and removes the opaque layer of expose portion, exposes the substrate of following part.Said method further comprises the negative photoresist layer that removes any remainder, stops layer and positive photoresist layer, and the mask of patterning is provided.The said mask that is patterned is used to make integrated circuit.Alternatively, the positive photoresist layer of said patterning removed before the said negative photoresist layer of patterning.
In other alternative specific embodiment; The present invention is provided for making the blank structure of photomask of IC-components; The blank structure of said photomask has transparent substrates, and described transparent substrates has on surf zone and the said surf zone and is coated with opaque layer.Negative photoresist material covers said surf zone.Stopping layer being covered on the said negative photoresist material.Preferably, partly stop the negative photoresist of layer and/or part positive photoresist layer protection and before patterning, avoid any possible exposure or destruction.Said structure also comprises and is covered in the said positive photoetching rubber material that stops on the layer.Preferably, said structure is used to make phase-shift mask, but also can be used for other mask structure.
Can obtain much to surpass the benefit of conventional art through the present invention.For example, the present invention provides a kind of wieldy technology of conventional art that depends on.In certain embodiments, in the chip on each wafer, this method provides the output of higher device.In addition, this method provides a kind of and existing technology compatible method, need not existing equipment and technology are done material alterations.Preferably, the present invention can be applicable to various uses, for example storer, special IC, microprocessor and other device.Preferably, the present invention provides a kind of method that adopts less step to make the half-tone type phase-shift mask, and this has improved process efficiency.Depend on embodiment, can obtain one or more these benefits.This instructions and hereinafter will be introduced these and other benefit in more detail.
Adopt the beamwriter lithography board traditionally when negative resist exposure is made mask, if want to obtain peripheral shading type light shield (dark-periphery mask), then the electron beam light beam need be done comprehensive exposure with outer peripheral areas; Not only very time-consuming and be easy to generate defective; Increase extra machining clearances such as last part technology repairing,, then can reduce the electron beam exposure cost of costliness if take this kind invention mode; And avoid generation of defects; Save unnecessary back segment and repair job sequence, can obtain required light shield, so that the usefulness of integrated circuit manufacturing to be provided.
Can more completely understand each additional purpose, feature and advantage of the present invention with reference to detailed instructions and accompanying drawing subsequently.
Description of drawings
Fig. 1 to Fig. 8 is the diagrammatic cross-section of the simplification of phase-shift mask manufacturing approach according to an embodiment of the invention;
Fig. 9 to Figure 17 is the diagrammatic cross-section according to the simplification of the phase-shift mask manufacturing approach of another alternate embodiments of the present invention.
Embodiment
According to the present invention, be provided for making the method for semiconductor devices.More particularly; The present invention provides a kind of method that is used to make photo etched mask; Said photo etched mask is used to make advanced integrated circuit, and said advanced integrated circuit is dynamic RAM spare, SRAM spare (SRAM), special IC device (ASIC), microprocessor and microcontroller, flush memory device and other device for example.
According to one embodiment of present invention, a kind of method of making mask is summarized as follows:
1. substrate is provided, for example, glass plate;
2. form the opaque layer (for example, chromium) that covers said substrate;
3. form the negative photoresist layer that covers said opaque layer;
4. form the layer that stops that covering said negative photoresist layer;
5. form and cover the said positive photoresist layer that stops layer;
6. the said positive photoresist layer of patterning forms one or more windows and does not expose the negative photoresist layer that is covered by positive photoetching rubber in said positive photoresist layer;
7. remove the layer that stops that exposing in said one or more window opening, expose portion is born photoresist layer;
8. the negative photoresist layer of the said expose portion of patterning, the part that said negative photoresist layer is capped before technology in avoid any destruction;
9. the said exposed portions of developing is born photoresist layer;
10. remove the exposed portions opaque layer, the part substrate below exposing;
11. remove any remainder negative photoresist layer, stop layer and positive photoresist layer, the mask of the patterning that uses the part opaque layer is provided;
Make integrated circuit 12. use the mask of described patterning;
13. carry out the step that other needs.
According to one embodiment of present invention, the above-mentioned steps sequence provides a kind of method of making photo etched mask, as above states brightly, and said step comprises uses positive photoetching rubber and negative photoresist film.Preferably, the negative photoresist layer that is capped this part of partial protection of negative photoresist forms peripheral dark field mask.Whole instructions of the present invention particularly the described accompanying drawing of hereinafter can do more detailed description to the present invention.
Fig. 1 to Fig. 8 is the diagrammatic cross-section of simplification of the manufacturing approach of phase-shift mask according to an embodiment of the invention.These accompanying drawings only are exemplary, and it should not limit the scope of claim improperly.Those of ordinary skills will be appreciated that many variations, substitute and revise.As shown in the figure, this method provides quartz substrate 100.Said quartz substrate comprises the chromium layer 103 that covers this substrate.Also can adopt other rete.Said method forms the negative photoresist layer 105 that covers said chromium layer.Form the insulation course 107 and positive photoresist layer 109 that cover said negative photoresist layer.According to different application, said insulation course 107 can adopt various materials.Please refer to Fig. 2, said method makes public 201 to said positive photoresist layer, and is as shown in the figure, removes exposure area 203 through development, as shown in Figure 3.In said photoresist layer, form the opening of mask pattern 301.
This method is then through the exposed region 405 of the opening etching insulation course in the said photoresist layer, and is as shown in Figure 4.Preferably, can adopt dry etching technology.Only as embodiment, wherein said dry etching comprises plasma etching, reactive ion etching etc.The plasma etching selectivity removes insulation course from said negative photoresist layer.At this, said negative photoresist layer is as etching stop layer.Replacedly, also can adopt wet etching technique.Please refer to Fig. 5, said method makes public 501 to said negative photoresist layer, forms pattern, and said pattern is developed and is removed 601, and is as shown in Figure 6.Preferably, part positive photoresist layer that is not patterned and/or etching stop layer are protected unexposed negative photoresist layer zone.Said method is carried out etching 701 to the described chromium layer that exposes, and is as shown in Figure 7.Said etching can not damaged said quartz substrate.Said quartz substrate in the technology of etching chromium layer as etching stop layer.The chromium layer that is etched is patterned, and forms mask pattern, and this mask pattern is used to make integrated circuit.Please refer to Fig. 8, said method then divests 801 to described photoresist layer and insulation course.Divesting technology usually adopts the fogging agent that contains oxygen plasma.Certainly, specific divesting technology depends on other factors.Depend on embodiment, can also have other variation, modification and replacement.Especially hereinafter can be described in detail other method and structure according to the present invention at the whole instructions of the present invention.
According to one embodiment of present invention, a kind of method that is used to make mask is summarized as follows:
1. substrate is provided, for example, glass plate;
2. form the opaque layer (for example, chromium) that covers said substrate;
3. form the negative photoresist layer that covers said opaque layer;
4. form the layer that stops that covering said negative photoresist layer;
5. form and cover the said positive photoresist layer that stops layer;
6. the said positive photoresist layer of patterning forms one or more windows in said positive photoresist layer;
7. remove in said one or more window be exposed stop layer, expose portion is born photoresist layer;
8. divest said positive photoresist layer;
9. the said exposed portions of patterning is born photoresist layer;
10. the said exposed portions of developing is born photoresist layer;
11. remove the exposed portions opaque layer, the part substrate below exposing;
12. remove any remainder negative photoresist layer, stop layer and positive photoresist layer, the mask of the patterning that uses the part opaque layer is provided; And
13. carry out the step that other needs.
According to one embodiment of present invention, the above-mentioned steps sequence provides a kind of method of making photo etched mask, as above states brightly, and said step comprises uses positive photoetching rubber and negative photoresist film.Preferably, negative this part of photoresist partial protection that is capped is born photoresist layer, forms peripheral shading mask.Whole instructions of the present invention particularly the described accompanying drawing of hereinafter can do more detailed description to the present invention.
Fig. 9 to Figure 17 is the diagrammatic cross-section of simplification of the manufacturing approach of phase-shift mask according to another embodiment of the invention.These accompanying drawings only are exemplary, and it should not limit the scope of claim improperly.Those of ordinary skills will be appreciated that many variations, substitute and revise.As shown in the figure, this method provides quartz substrate 900.Said quartz substrate comprises chromium layer 901 or other the similar rete that covers this substrate.This method forms the negative photoresist layer 903 that covers said chromium layer.Form the insulation course 905 and positive photoresist layer 907 that cover said negative photoresist layer.According to different application, said insulation course can adopt various materials.Please refer to Figure 10, said method makes public 1101 to said positive photoresist layer, and is as shown in the figure, removes the exposure area through development, shown in figure 11.Shown in figure 11, the opening of formation mask pattern 1103 in said photoresist layer.
This method is then through the insulation course of the opening etching exposed region 1105 in the said photoresist layer, and is shown in figure 12.Preferably, can adopt dry etching technology.As just embodiment, said dry etching comprises plasma etching, reactive ion etching etc. at this.The plasma etching selectivity removes dielectric film from said negative photoresist layer.Replacedly, also can adopt wet etching.At this, said negative photoresist layer is as etching stop layer.Said method adopts stripping technology or similar technology that described positive photoetching rubber is removed 1301 (referring to Figure 13) then.As shown in the figure, the surface of said patterned layer does not have the positive photoetching rubber material.Please refer to Figure 14, said method makes public 1401 to said negative photoresist layer, forms pattern, and other part of said negative photoresist layer is protected by etching stop layer etc.Said pattern is developed and is removed 1501, and is shown in figure 15.Said method is carried out etching 1601 to the chromium layer of said exposure, and is shown in figure 16.Etching can not damaged said quartz substrate.Said quartz substrate in the technology of etching chromium layer as etching stop layer.The chromium layer that is etched is patterned, and forms mask pattern, and this mask pattern is used to make integrated circuit.Please refer to Figure 17, said method then divests 1701 to described photoresist layer and insulation course.Divesting technology usually adopts the fogging agent that contains oxygen plasma, and it can mix with water.Certainly, specific divesting technology depends on other factors.Depend on described embodiment, can also have other variation, modification and replacement.
Although in above-mentioned specific embodiment, be illustrated, it can have other modification, replacement and variation.For example, boron can be used as impurity, but also can adopt other impurity.Should be understood that also example described here and embodiment only are used for explanation, therefore, various conspicuous modification that the technician made in present technique the field in or variation should be included in the application's the scope of spirit and accompanying claims.
Claims (17)
1. a manufacturing is used for the method for the mask of IC-components, and said method comprises:
Substrate is provided, and said substrate comprises the opaque layer that covers this substrate, covers the negative photoresist layer of said opaque layer, covers stopping layer and covering the said positive photoresist layer that stops layer of said negative photoresist layer;
The said positive photoresist layer of patterning forms one or more windows in said positive photoresist layer;
Remove the layer that stops that exposing in said one or more window, with the negative photoresist layer of expose portion, and the remainder positive photoresist layer is protected the not negative photoresist layer of exposed region;
The negative photoresist layer of the said expose portion of patterning is protected said all the other negative photoresist layers of exposed region not simultaneously;
Negative photoresist layer to said expose portion develops; And
Remove the expose portion of opaque layer, to expose following part substrate; And remove any remainder negative photoresist layer, stop the layer and positive photoresist layer, so that the mask of patterning to be provided.
2. manufacturing according to claim 1 is used for the method for the mask of IC-components, and wherein said substrate is quartzy.
3. manufacturing according to claim 1 is used for the method for the mask of IC-components, and the wherein said opaque layer that removes expose portion comprises wet-etching technology or dry etch process.
4. manufacturing according to claim 1 is used for the method for the mask of IC-components, and the opaque layer of wherein said expose portion has the characteristic length less than 0.72 micron.
5. manufacturing according to claim 1 is used for the method for the mask of IC-components, and the wherein said layer that stops to be insulation course.
6. manufacturing according to claim 1 is used for the method for the mask of IC-components, wherein further is included in the SIC (semiconductor integrated circuit) manufacturing and uses said mask.
7. manufacturing according to claim 1 is used for the method for the mask of IC-components, and the negative photoresist layer of wherein said patterning expose portion comprises on selective scanning laser beam or electron beam to the negative photoresist of said expose portion.
8. manufacturing according to claim 1 is used for the method for the mask of IC-components, wherein said raster scanning or the vector scan of being patterned as.
9. method of making IC-components, said method comprises:
Substrate is provided, and said substrate comprises the opaque layer that covers this substrate, covers the negative photoresist layer of said opaque layer, covers stopping layer and covering the said positive photoresist layer that stops layer of said negative photoresist layer;
The said positive photoresist layer of patterning forms one or more windows with yardstick in said positive photoresist layer;
Remove the layer that stops that exposing in said one or more window, with the negative photoresist layer of expose portion;
The negative photoresist layer of the said expose portion of patterning;
Negative photoresist layer to said expose portion develops; And
Remove the opaque layer of expose portion, to expose following part substrate; And
Remove any remainder negative photoresist layer, stop the layer and positive photoresist layer, so that the mask of patterning to be provided;
Use the mask of said patterning to make integrated circuit.
10. the method for manufacturing IC-components according to claim 9, wherein said substrate are quartzy.
11. the method for manufacturing IC-components according to claim 9, the substrate of wherein said expose portion has the characteristic length less than 0.72 micron.
12. the method for manufacturing IC-components according to claim 9, the part that is wherein covered by positive photoresist layer is about 30% of said substrate surface area.
13. the method for manufacturing IC-components according to claim 9, stops layer and positive photoresist layer is carried out respectively with the mask that patterning is provided at the wherein said negative photoresist layer that removes any remainder.
14. the method for manufacturing IC-components according to claim 9, the wherein said layer that stops to be etching stop layer.
15. the method for manufacturing IC-components according to claim 9, the wherein said layer that stops to be the spacer between negative photoresist layer and the positive photoresist layer.
16. the blank structure of photomask that is used for IC-components, the blank structure of said photomask comprises:
Transparent substrates with surf zone;
Cover the opaque layer of said surf zone;
Cover the negative photoresist material of said opaque layer;
Cover the layer that stops of said negative photoresist material; And
Cover the said positive photoetching rubber material that stops layer.
17. the blank structure of the photomask that is used for IC-components according to claim 16, the blank structure of wherein said photomask comprise sealing and seal said transparent substrates, opaque layer, negative photoresist material, stop layer and positive photoetching rubber material in the packing of surrounding environment.
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101916722B (en) * | 2010-07-23 | 2014-11-26 | 上海华虹宏力半导体制造有限公司 | Method for preventing metallic coatings at edges of wafers from peeling |
| CN105093838B (en) * | 2014-05-09 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | A kind of method and structure preventing penumbra incidence photomask in exposure system |
| CN107134407A (en) * | 2017-05-12 | 2017-09-05 | 中国科学院微电子研究所 | A kind of two-dimensional material FET manufacture method based on Double-layer photoetching adhesive process |
| CN108987612A (en) | 2017-06-01 | 2018-12-11 | 京东方科技集团股份有限公司 | Mask plate and its manufacturing method, flexible substrate stripping system and flexible substrate stripping means |
| CN108107497B (en) * | 2017-12-12 | 2021-06-11 | 郑君雄 | Grating manufacturing method |
| CN112320752A (en) * | 2019-08-05 | 2021-02-05 | 上海新微技术研发中心有限公司 | Preparation method of negative photoresist patterned film layer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1430099A (en) * | 2001-12-31 | 2003-07-16 | 中国科学技术大学 | Manufacturing method of micro-pipeline |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1430099A (en) * | 2001-12-31 | 2003-07-16 | 中国科学技术大学 | Manufacturing method of micro-pipeline |
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