CN101620375A - Method for correcting lug photomask pattern - Google Patents
Method for correcting lug photomask pattern Download PDFInfo
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- CN101620375A CN101620375A CN200810130467A CN200810130467A CN101620375A CN 101620375 A CN101620375 A CN 101620375A CN 200810130467 A CN200810130467 A CN 200810130467A CN 200810130467 A CN200810130467 A CN 200810130467A CN 101620375 A CN101620375 A CN 101620375A
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 60
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000012940 design transfer Methods 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 48
- 238000010586 diagram Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention relates to a method for correcting a lug photomask pattern, including that: a wafer which is provided with a plurality of bonding pads on an active surface is provided; photoresist layer is formed on the active surface of the wafer; a first photomask layer with a first pattern is provided, wherein the first pattern of the first photomask layer is used for limiting the effective area on the wafer, and the effective area is corresponding to the whole area of the wafer; a primary exposure process is executed, so that the first pattern is transferred onto the photoresist layer; the first photomask layer with the first pattern is substituted by a second photomask layer with a second pattern, and a secondary exposure process is executed, so that the second pattern is transferred onto the photoresist layer, wherein the second pattern of the second photomask layer is used for limiting partial area of the wafer, and partial second pattern is overlapped with partial first pattern; and a developing and etching process is executed to remove the overlapped part of the second pattern and the first pattern, and a plurality of bonding pads on the effective area on the wafer are exposed and partial photoresist layer on the ineffective area on the whole area is removed.
Description
Technical field
The relevant a kind of method that forms projection of the present invention particularly utilizes twice photomask operation to avoid forming the method for projection on the invalid chip area of wafer about a kind of.
Background technology
In the photolithography in semiconductor operation, aim at exposure machine (Mask aligner) and can carry out the aligning and the exposure of entire wafer.Because be the full sheet width of cloth, need only when making photomask again, all invalid chips cover and get final product.But for example photoresist profile, alignment error and high ratio of defects are its shortcomings to the performance of aligning exposure machine.Yet, step-by-step movement is aimed at exposure machine (stepper aligner) when making photomask, can't be designed into all invalid chips are covered, so in the operation of carrying out follow-up electrogilding projection, partly golden projection can be formed on the invalid chip, the golden projection that all these can be formed on the invalid chip in technological process removes, and results in waste technology cost.
Summary of the invention
In view of above problem, fundamental purpose of the present invention is to provide a kind of method of correcting lug photomask pattern, so as to utilizing the mode of twice photomask, can limit the effective coverage of wafer, makes projection can be formed on the effective coverage of wafer.
According to above-mentioned purpose, the present invention discloses a kind of method of correcting lug photomask pattern, comprises: a wafer is provided, has a plurality of weld pads on the one active surface; Form a photoresist layer on the active surface of wafer; The first photomask layer with first pattern is provided, and at this, first pattern of the first photomask layer is in order to limiting the effective coverage on the wafer, and the effective coverage is the Zone Full corresponding to wafer; Carry out one first exposure process, make and win design transfer to the photoresist layer; Replace the first photomask layer with the second photomask layer with first pattern with second pattern, and carry out second exposure process, make second design transfer to the photoresist layer, at this, second pattern of the second photomask layer is the part zone in order to the qualification wafer, and partly second pattern overlaps with part first pattern; And carry out one and develop and etching step, removing the overlapping part of second pattern and first pattern, and expose at a plurality of weld pads on the effective coverage on the wafer and remove the photic resist layer of part on the inactive area at Zone Full.
The present invention also discloses a kind of correcting lug photomask pattern that utilizes to form the method for projection, comprises: a wafer is provided, has a plurality of weld pads on the one active surface; Form a photoresist layer on wafer to cover active surface; The first photomask layer with first pattern is provided, and be in order to limiting the effective coverage on the wafer at first pattern of this first photomask layer, and the effective coverage is the Zone Full corresponding to wafer; Carry out one first exposure process, make and win design transfer to the photoresist layer; Replace the first photomask layer with the second photomask layer with first pattern with second pattern, and carry out second exposure process, make second design transfer to the photoresist layer, at this, second pattern of the second photomask layer is the Zone Full in order to the qualification wafer, and partly second pattern overlaps with part first pattern; Carry out one and develop and etching step, removing the overlapping part of second pattern and first pattern, and expose a plurality of weld pads on the effective coverage on the wafer and remove the photic resist layer of part on an inactive area of Zone Full; Form a plurality of projections on respect to a plurality of weld pads that exposed to the open air on the wafer; And remove this photoresist layer.
Description of drawings
Below conjunction with figs. is described in detail preferred embodiment of the present invention so that can be to purpose of the present invention, structure, feature and function thereof are had further understanding, wherein:
Fig. 1 is disclosed technology according to the present invention, is illustrated in the synoptic diagram that forms the photoresist layer on the wafer;
Fig. 2 is disclosed technology according to the present invention, is illustrated in the wafer top with photoresist layer, forms to have the first photomask layer of first pattern, and carries out the synoptic diagram of first exposure process;
Fig. 3 is disclosed technology according to the present invention, represents the synoptic diagram of first design transfer of the first photomask layer to the photoresist layer;
Fig. 4 is disclosed technology according to the present invention, is illustrated on the wafer of the photoresist layer that has exposed, forms to have the second photomask layer of second pattern, and carries out the synoptic diagram of second exposure process;
Fig. 5 is disclosed technology according to the present invention, represents the synoptic diagram of second design transfer of the second photomask layer to the photoresist layer that has exposed;
Fig. 6 is disclosed technology according to the present invention, exposes the synoptic diagram of the effective coverage on the active surface of wafer;
Fig. 7 is disclosed technology according to the present invention, is illustrated in the synoptic diagram that forms a plurality of golden projections on the active surface of the wafer that exposes to the open air; And
Fig. 8 is disclosed technology according to the present invention, is illustrated in the synoptic diagram that forms a plurality of golden projections on the wafer.
Embodiment
The present invention is a kind of method of revising the photomask pattern of projection in this direction of inquiring into, is to utilize twice photomask and cooperate positive photoresist, makes projection only be formed on the method on the effective coverage of wafer.In order to understand the present invention up hill and dale, detailed step and composition thereof will be proposed in following description.At this, the detailed step that well-known projection is formed on back segment operations such as the mode of chip and chip thinning is not described in the details, with the restriction of avoiding causing the present invention unnecessary.Yet, for preferred embodiment of the present invention, can be described in detail as follows, yet except these were described in detail, the present invention can also implement in other embodiments widely, and scope of the present invention do not limited, its with after claim be as the criterion.
With reference to figure 1, be to be illustrated in the synoptic diagram that forms a photoresist layer on the wafer.In Fig. 1, be that a wafer 10 is provided earlier, it has an active surface 101 and a back side 102.Then, utilize semiconductor process, on wafer 10, form the active surface 101 of a photoresist layer 20 to cover wafer 10.In this embodiment, photoresist layer 20 is positive photoresists, and its characteristic is after exposure, makes that photoresist can be by developer dissolves.
Then, with reference to figure 2, be to be illustrated in wafer top with photoresist layer, formation has the first photomask layer of first pattern, and carries out the synoptic diagram of first exposure process.At first, the first photomask layer 30 with first pattern 300 is provided and is formed on photoresist layer 20 top, at this, first pattern 300 on the first photomask layer 30 is in order to limit the Zone Full on photoresist layer 20.Then, carrying out first exposure process 40, is the mode of utilizing ultraviolet light (UV light) irradiation exposure, and first pattern 300 on first photomask 30 is transferred on the photoresist layer 20 of wafer 10 tops, as shown in Figure 3.At this, first exposure process 40 comprises: provide a photomask to aim at exposure machine (mask aligner) (expression in the drawings) and have above the first photomask layer 30 of first pattern 300; Then, photomask is aimed at the exposure machine aligning and had first photomask 30 of first pattern 300 and wafer 10 with photoresist layer 20; Carry out ultraviolet light (UV light) irradiation exposure, first pattern 300 of the photomask 30 of winning is transferred on the photoresist layer 20; At this, first pattern 300 of first photomask 30 is in order to limit the first area 210 on photoresist layer 20, this first area 210 is corresponding to the effective coverage 210 on the active surface 101 of wafer 10, and its effective coverage 210 is to be illustrated on the wafer 10 zone that each can form projection (expression in the drawings).
And then, with reference to figure 4, be to be illustrated on the wafer of the photoresist layer that has exposed, formation has the second photomask layer of second pattern, and carries out the synoptic diagram of second exposure process.In Fig. 4, be will have the second photomask layer 32 of second pattern 320 replace the first photomask layer 30 and be formed on wafer 10 tops with the photoresist layer 20 that has exposed with first pattern 300.Then, carry out second exposure process 50, utilize the UV-irradiation exposure, make second pattern 320 of the second photomask layer 32 be transferred on the photoresist layer 20 that has exposed, as shown in Figure 5.At this, the UV-irradiation exposure energy of first exposure process is lower than the UV-irradiation exposure energy of second exposure process.
In addition, second exposure process 50 also comprises: provide a stepper (stepper) (expression) in the drawings to have above the second photomask layer 32 of second pattern 320; Carry out UV-irradiation exposure, make second pattern of the second photomask layer 32 throw and transfer on the photoresist layer 20 that has exposed that making has first pattern 300 and second pattern 320 on the photoresist layer 20 by the mode of projection; At this, second pattern 320 of the second photomask layer 32 is in order to limit the second area 220 on photoresist layer 20, the Zone Full on the active surface 101 that this second area 220 is corresponding wafers 10.In this embodiment, the mode of utilizing stepper to expose is effective coverage or the inactive area that is regardless of on the active surface 101 of wafer 10, be to expose on the photoresist layer 20 that has exposed partly through UV-irradiation in the mode of block of cells, make that the exposure of entire wafer 10 need be through tens of time repeatability and with the exposure of a block of a block, just entire wafer 10 required step of exposure can be finished, therefore, have zone partly be with first time exposure process in the zone overlapping.
Then, carrying out one develops and etching step, when at first developing, because the inactive area on the photoresist layer 20 is only carried out single exposure, so when carrying out development step, can't remove photoresist layer 20 fully through single exposure, and effective coverage (being the overlapping zone of first area 210 and second area 220) is through double exposure, so when carrying out development step, can be removed by neutralization reaction with wafer 10 surfaces partly through the photoresist layer 20 of double exposure.
And then, before carrying out etching step, also comprise a baking procedure, the purpose of this baking procedure be further with in the photoresist layer 20 residual solvent, drop to minimum by evaporation.Next being to carry out etching step, is to remove first pattern and second pattern overlapping part on the photoresist layer, and exposes the effective coverage on the active surface 101 of wafer 10, as shown in Figure 6.
Then, continue to utilize photoresist layer 20, on the active surface 101 of the wafer 10 that exposes to the open air, form a metal level 60 as screen layer (hard mask layer); Then, the mode of utilize grinding again removes the metal level 60 on photoresist layer 20; At last, remove photoresist layer 20, to form a plurality of metal couplings 601 on wafer 10, as shown in Figure 7.In this embodiment, metal coupling 602 can be golden projection, and its generation type comprises: at first form a crystal seed layer (seed layer) (not expression in the drawings), particularly Jin crystal seed layer on the active surface 101 of the wafer 10 that has exposed to the open air; Then utilize the mode of electroplating,, remove photoresist layer 20 at last again, to form a plurality of golden projections on wafer 10, as shown in Figure 8 to form the gold layer to fill up the active surface 101 of the wafer 10 that has exposed to the open air.
Can obtain by the above embodiments, utilize the mode of double exposure, can avoid being formed on the inactive area of wafer, and golden projection only can be formed on the effective coverage of wafer, to reduce the process cost of golden projection at metal coupling.
Though the present invention discloses as above with aforesaid preferred embodiment; yet it is not in order to limit the present invention; anyly be familiar with present technique person; without departing from the spirit and scope of the present invention; when can making all changes that is equal to or replacement, therefore scope of patent protection of the present invention must be looked being as the criterion that the appended the application's claim scope of this instructions defined.
Claims (10)
1. the method for a correcting lug photomask pattern comprises:
One wafer is provided, has an active surface and a back side;
Form a photoresist layer on this active surface of this wafer;
The one first photomask layer with first pattern is provided, and wherein this first pattern of this first photomask layer is in order to limiting the effective coverage on this wafer, and this effective coverage is the Zone Full corresponding to this wafer;
Carry out one first exposure process, make this first design transfer to this photoresist layer;
Replace the first photomask layer with second a photomask layer with second pattern with this first pattern, and carry out one second exposure process, make this second design transfer to this photoresist layer, wherein this second pattern of this second photomask layer is in order to limiting the part zone of this wafer, and the dosage of this second exposure process is greater than the dosage of this first exposure process; And
Carry out one and develop and etching step, removing the overlapping part of this second pattern and this first pattern, and expose this effective coverage on this wafer and remove this photoresist layer of part on an inactive area of this Zone Full.
2. method according to claim 1 is characterized in that this photoresist layer is positive photoresist.
3. method according to claim 1 is characterized in that this effective coverage is the Zone Full corresponding to this wafer.
4. method according to claim 1, it is characterized in that carrying out this first exposure process is to utilize photomask to aim at exposure machine.
5. method according to claim 1, it is characterized in that carrying out this second exposure process is to utilize stepper.
6. one kind is utilized correcting lug photomask pattern to form the method for projection, comprises:
One wafer is provided, has an active surface and a back side;
Form a photoresist layer on this wafer to cover this active surface;
The one first photomask layer with first pattern is provided, and wherein this first pattern of this first photomask layer is in order to limiting the effective coverage on this wafer, and these effective coverages are corresponding to the Zone Full on this wafer;
Carry out one first exposure process, make this first design transfer to this photoresist layer;
Replace the first photomask layer with second a photomask layer with second pattern with this first pattern, and carry out one second exposure process, make this second design transfer to this photoresist layer, wherein this second pattern of this second photomask layer is in order to limit the Zone Full of this wafer, and partly this second pattern overlaps with this first pattern of part, and the energy of this second exposure process is greater than the energy of this first exposure process;
Carrying out one develops and etching step, with the overlapping that removes this second pattern and this first pattern on this photoresist layer partly, and expose on this wafer with respect to these weld pads of this effective coverage and remove this photoresist layer of part on an inactive area of this Zone Full;
Form a plurality of projections on respect to these weld pads that exposed to the open air on this wafer: and
Remove this photoresist layer.
7. method according to claim 6 is characterized in that this photoresist layer is positive photoresist.
8. method according to claim 6 is characterized in that this effective coverage is the Zone Full corresponding to this wafer.
9. method according to claim 6, it is characterized in that carrying out this first exposure process is to utilize photomask to aim at exposure machine.
10. method according to claim 6, it is characterized in that carrying out this second exposure process is to utilize stepper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101304672A CN101620375B (en) | 2008-07-04 | 2008-07-04 | Method for correcting lug photomask pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101304672A CN101620375B (en) | 2008-07-04 | 2008-07-04 | Method for correcting lug photomask pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101620375A true CN101620375A (en) | 2010-01-06 |
| CN101620375B CN101620375B (en) | 2012-02-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008101304672A Expired - Fee Related CN101620375B (en) | 2008-07-04 | 2008-07-04 | Method for correcting lug photomask pattern |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106486347A (en) * | 2015-08-31 | 2017-03-08 | 格罗方德半导体公司 | The dielectric etch of hard mask etch and dielectric etch and through hole and metal level discovers overlapping |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303272B1 (en) * | 1998-11-13 | 2001-10-16 | International Business Machines Corporation | Process for self-alignment of sub-critical contacts to wiring |
| CN1208690C (en) * | 2002-08-02 | 2005-06-29 | 联华电子股份有限公司 | Photoetching process with multilayer photoresist layer application |
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- 2008-07-04 CN CN2008101304672A patent/CN101620375B/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106486347A (en) * | 2015-08-31 | 2017-03-08 | 格罗方德半导体公司 | The dielectric etch of hard mask etch and dielectric etch and through hole and metal level discovers overlapping |
| CN106486347B (en) * | 2015-08-31 | 2019-10-01 | 格罗方德半导体公司 | The method and apparatus of the etching model of semiconductor utensil |
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| Publication number | Publication date |
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| CN101620375B (en) | 2012-02-08 |
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