CN101599422A - A kind of method and system that reduces energy consumption of device for processing substrate - Google Patents
A kind of method and system that reduces energy consumption of device for processing substrate Download PDFInfo
- Publication number
- CN101599422A CN101599422A CNA2009100887334A CN200910088733A CN101599422A CN 101599422 A CN101599422 A CN 101599422A CN A2009100887334 A CNA2009100887334 A CN A2009100887334A CN 200910088733 A CN200910088733 A CN 200910088733A CN 101599422 A CN101599422 A CN 101599422A
- Authority
- CN
- China
- Prior art keywords
- preheating cavity
- time
- heating system
- reaction chamber
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a kind of method and system that reduce energy consumption of device for processing substrate, can reduce the whole energy consumption of substrate processing apparatus.Described method comprises: the required time T 1 of statistics preheating cavity heating, and reaction chamber is carried out technology and is spread out of the required time T of support plate 2; Wherein, T2＞T1; After reaction chamber begins technology, according to the startup opportunity of time T 1 and T2 delay preheating cavity heating system, in time spread out of support plate to reaction chamber after making preheating cavity be heated to design temperature, thereby avoided occurring the process that preheating cavity is waited for reaction chamber, the heating energy consumption of also having avoided heating system always to cause in work in this process has reduced the whole energy consumption of PECVD equipment.
Description
Technical field
The present invention relates to apparatus and process control field, particularly relate to a kind of method and system that reduce energy consumption of device for processing substrate.
Background technology
In art production process, relate to various substrate processing apparatus, and the energy consumption problem of substrate processing apparatus is the problem that people seek to solve always.With plasma reinforced chemical vapour deposition (PECVD) equipment is example:
Make crystal silicon solar batteries and adopt plasma reinforced chemical vapour deposition (PECVD) technology more.In the crystal silicon solar batteries manufacturing equipment, PECVD equipment adopts at line style coating technique (In-line PECVD, on-line coating type plasma reinforced chemical vapour deposition equipment) more.
Structural representation with reference to In-line PECVD equipment shown in Figure 1, In-line PECVD equipment generally comprises several vacuum tightness chambers, i.e. preheating cavity among the figure 1, reaction chamber 2 and cooling chamber 3, open the valve 6 that vacuumizes, and family of power and influence G1, G2, G3 and the G4 of vacuum tightness chamber, by each family of power and influence's mating reaction, can keep the vacuum state in described preheating cavity 1, reaction chamber 2 and the cooling chamber 3; This equipment also comprises load platform 7 and unloading piece platform 8, support plate retracting device 9.The support plate carrying direction of the workflow of this In-line PECVD equipment shown in x1-x9 mainly may further comprise the steps:
Step S1, silicon chip 4 is positioned on the support plate 5;
Step S2, with support plate 5 carrying (by automatics such as running roller or manipulators) in preheating cavity 1, carry out the The pre-heat treatment flow process of support plate 5, heating support plate 5 and silicon chip 4 at preheating cavity 1; Support plate 5 is transported in the reaction chamber 2, carries out depositing operation; After reaction is finished support plate 5 is transported to and carries out cooling processing in the cooling chamber 3, then support plate 5 is transported on the unloading piece platform 8, the silicon chip 4 that machines is taken away;
Step S3, support plate 5 return load platform 7 by automatic Handling device 9.
The processing capacity of each main modular is as follows in the above-mentioned course of work:
Preheating cavity 1: pass sheet, heat, vacuumize, fill atmosphere, send sheet;
Reaction chamber 2: pass sheet, heat, vacuumize, technology, purge, send sheet;
Cooling chamber 3: pass sheet, cool off, vacuumize, fill atmosphere, send sheet.
In order to make silicon chip before plated film, reach the required temperature of technology, in preheating cavity 1, need silicon chip and support plate are heated it at present.Generally in preheating cavity, use infrared lamp to heat,, tend to install hundreds of infrared lamp in order to reach the purpose of Fast Heating.Except special gas consumption, most of energy consumption of PECVD equipment is all in the heating of using infrared lamp, and silicon chip in reaction chamber from the beginning technology to support plate being spread out of the required time of reaction chamber, often greater than preheating cavity from receiving the time of support plate to the heating silicon chip to assigned temperature, though be easy to cause silicon chip in preheating cavity, to reach the heating-up temperature of setting, but must wait for that also reaction chamber finishes the phenomenon that technology just can be imported into, heating system is being worked always in this process, causes a lot of unnecessary heating energy consumptions for whole PECVD equipment.
For other similar substrate processing apparatus, equally also there is above-mentioned energy consumption problem.
Summary of the invention
Technical problem to be solved by this invention provides a kind of method and system that reduce energy consumption of device for processing substrate, can reduce the energy consumption of substrate processing apparatus.
In order to address the above problem, the invention discloses a kind of method that reduces energy consumption of device for processing substrate, described substrate processing apparatus comprises preheating cavity and reaction chamber at least, and the support plate that transmits between described chamber, described method comprises:
The required time T 1 of statistics preheating cavity heating, and reaction chamber is carried out technology and is spread out of the required time T of support plate 2; Wherein, T2＞T1;
After reaction chamber begins technology, postpone startup opportunity of preheating cavity heating system, in time spread out of support plate to reaction chamber after making preheating cavity be heated to design temperature according to time T 1 and T2.
Preferably, described method postpones the startup opportunity of preheating cavity heating system in the following manner:
Detect preheating cavity and whether be ready to, if then postpone the T2-T1 time and restart the preheating cavity heating system;
If not, wait for that then preheating cavity is ready to, and record stand-by period T3; When T3＜(T2-T1), postpone (T2-T1)-T3 time and restart the preheating cavity heating system, otherwise directly start the preheating cavity heating system.
Preferably, described method can also postpone the startup opportunity of preheating cavity heating system by another kind of mode:
Whether detect has crucial chamber to be in independent maintenance state, if, wait for that then described crucial chamber removes independent maintenance state, and record stand-by period T4, continue to detect preheating cavity then and whether be ready to; Whether if not, then directly detect preheating cavity is ready to;
If preheating cavity is ready to, whether then judge T4 less than (T2-T1), if less than, then delay (T2-T1-T4) time is restarted the preheating cavity heating system; If more than or equal to, then directly start the preheating cavity heating system;
If preheating cavity is unripe, wait for that then preheating cavity is ready to, record stand-by period T3, whether judge T3 less than (T2-T1-T4), if less than, then delay (T2-T1)-T3 time is restarted the preheating cavity heating system, if more than or equal to, then directly start the preheating cavity heating system.
Wherein, described preheating cavity is ready to be meant that preheating cavity finishes from prepare receiving support plate required work before the heating.
Preferably, the method for the invention timing statistics T1 and T2 in the following manner:
At time T 1, get before this heating the maximum of preheating cavity heating required time;
At time T 2, to get before this technology, reaction chamber is carried out technology and is spread out of the maximum of support plate required time.
The present invention also provides a kind of device that reduces energy consumption of device for processing substrate, and described substrate processing apparatus comprises preheating cavity and reaction chamber at least, and the support plate that transmits between described chamber, and described device comprises:
First statistic unit is used to add up the required time T 1 of preheating cavity heating;
Second statistic unit is used to add up reaction chamber and carries out technology and spread out of the required time T of support plate 2;
The control start unit after being used for reaction chamber and beginning technology, postpones startup opportunity of preheating cavity heating system according to time T 1 and T2, in time spreads out of support plate to reaction chamber after making preheating cavity be heated to design temperature.
Preferably, described control start unit a kind of comprising:
The first promoter unit is used to start the preheating cavity heating system;
Whether first detection sub-unit after being used for reaction chamber and beginning technology, detects preheating cavity and is ready to, if then the first promoter cell delay T2-T1 time was restarted the preheating cavity heating system; If not, then trigger the first timing subelement;
The first timing subelement, it is unripe to be used for detecting preheating cavity at first detection sub-unit, record stand-by period T3; When T3＜(T2-T1), first promoter cell delay (T2-T1)-T3 time was restarted the preheating cavity heating system, otherwise the first promoter unit directly starts the preheating cavity heating system.
Preferably, described control start unit another kind comprises:
The second promoter unit is used to start the preheating cavity heating system;
Second detection sub-unit, after being used for reaction chamber and beginning technology, whether have crucial chamber be in independent maintenance state, if then trigger the second timing subelement if detecting; If not, then trigger the 3rd detection sub-unit;
The second timing subelement is used for having detected crucial chamber at second detection sub-unit and is in independent maintenance state, record stand-by period T4;
Whether the 3rd detection sub-unit is used to detect preheating cavity and is ready to, if then as the T4 of second timing subelement record during less than (T2-T1), second promoter cell delay (T2-T1-T4) time was restarted the preheating cavity heating system; As the T4 of second timing subelement record during more than or equal to (T2-T1), the second promoter unit directly starts the preheating cavity heating system; If not, then trigger the 3rd timing subelement;
The 3rd timing subelement, it is unripe to be used for detecting preheating cavity at the 3rd detection sub-unit, record stand-by period T3; As T3 during less than (T2-T1-T4), second promoter cell delay (T2-T1)-T3 time was restarted the preheating cavity heating system; Otherwise the second promoter unit directly starts the preheating cavity heating system.
Wherein, described preheating cavity is ready to be meant that preheating cavity finishes from prepare receiving support plate required work before the heating.
Preferably, described first statistic unit is with before this heating, and the maximum of preheating cavity heating required time is as time T 1;
Described second statistic unit is with before this technology, and reaction chamber is carried out technology and spread out of the maximum of support plate required time as time T 2.
Compared with prior art, the present invention has the following advantages:
At first, a kind of method and device that reduces energy consumption of device for processing substrate provided by the present invention, in preheating cavity, reached the temperature of setting at silicon chip, but must wait for that also reaction chamber finishes the phenomenon that technology just can be imported into, take to add up the required time T 1 of preheating cavity heating, and reaction chamber is carried out technology and is spread out of the required time T of support plate 2, after reaction chamber begins technology, postpone the measure on startup opportunity of preheating cavity heating system according to time T 1 and T2, in time spread out of support plate to reaction chamber after making preheating cavity be heated to design temperature, thereby avoided occurring the process that preheating cavity is waited for reaction chamber, the heating energy consumption of also having avoided heating system always to cause in work in this process has reduced the whole energy consumption of substrate processing apparatus.
Secondly, the present invention is after reaction chamber begins technology, whether detect has crucial chamber to be in the independent maintenance, if have and then wait for the independent maintenance state of releasing, thereby and the startup opportunity of record stand-by period phase delay preheating cavity heating system, avoided the automatic process implementation under the situation that does not stop the automatic process task, crucial chamber such as reaction chamber or cooling chamber are carried out independent maintenance work, and the unnecessary heating energy consumption that preheating cavity causes in heating has always further reduced the whole energy consumption of substrate processing apparatus.
Description of drawings
Fig. 1 is the structural representation of a kind of In-line PECVD equipment in the prior art;
Fig. 2 is the method flow diagram of the embodiment of the invention one described a kind of PECVD of reduction equipment energy consumption;
Fig. 3 is the method flow diagram of the embodiment of the invention two described a kind of PECVD of reduction equipment energy consumptions;
Fig. 4 is the method flow diagram of the embodiment of the invention four described a kind of PECVD of reduction equipment energy consumptions;
Fig. 5 is the embodiment of the invention five described a kind of a kind of structure charts that reduce the energy consumption of device for processing substrate device;
Fig. 6 is the embodiment of the invention six described a kind of another kind of structure charts that reduce the energy consumption of device for processing substrate device.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
A kind of method and device that reduces energy consumption of device for processing substrate provided by the invention, by the required time T 1 of statistics preheating cavity heating, and reaction chamber is carried out technology and is spread out of the required time T of support plate 2, after reaction chamber begins technology, according to the startup opportunity of time T 1 and T2 delay preheating cavity heating system, in time spread out of support plate to reaction chamber after making preheating cavity be heated to design temperature, avoid preheating cavity to wait for and continued the unnecessary heating energy consumption that heating causes in the reaction chamber process, thereby reduced the whole energy consumption of substrate processing apparatus.To be that example is elaborated with the energy consumption that reduces PECVD equipment below.
Embodiment one:
With reference to Fig. 2, be the method flow diagram of the described a kind of PECVD of the reduction equipment energy consumption of present embodiment.
S201, the statistics required time;
The technology of carrying out in the preheating cavity comprises: the transmission support plate to reaction chamber, prepare to receive support plate, from load platform reception support plate, receive the support plate preheating cavity and prepare, heat; The technology of carrying out in the reaction chamber comprises: receive support plate, carry out technology, spread out of support plate to cooling chamber from preheating cavity.Wherein reaction chamber from beginning technology to support plate is spread out of the required time of reaction chamber greater than preheating cavity from receiving support plate to being heated to the required time of assigned temperature, at this phenomenon, the statistics preheating cavity fully heats required time T 1 and reaction chamber is carried out technology and spread out of the required time T of support plate 2;
S202, the startup opportunity of delay heating system;
Because T2＞T1, restart the preheating cavity heating and be so postpone the T2-T1 time, in time spread out of support plate to reaction chamber after making preheating cavity be heated to design temperature.
Preheating cavity is heated to design temperature and spreads out of support plate timely to reaction chamber, has avoided preheating cavity to wait for the unnecessary heating energy consumption that reaction chamber and lasting heating cause, thereby reduces the whole energy consumption of PECVD equipment.
Embodiment two:
To be example with Fig. 3 specify a kind of implementation method of a kind of PECVD of reduction equipment energy consumption of the present invention present embodiment.
S301, beginning technology;
S302, reaction chamber begins technology;
Whether S303 detects preheating cavity and is ready to;
After reaction chamber begins technology, detect preheating cavity and whether carry out, be ready to if detect preheating cavity, then execution in step S304 from receiving support plate to finishing the preceding required preparation of heating;
If it is unripe to detect preheating cavity, execution in step S306 then;
S304 waits for (T2-T1) time, continues step S305 then;
S305 starts the preheating cavity heating system;
S306 waits for that preheating cavity is ready to, record stand-by period T3;
S307 judges that whether T3 is less than (T2-T1);
If T3 is less than (T2-T1), execution in step S308 then;
If T3 is more than or equal to (T2-T1), execution in step S305 then;
S308 waits for (T2-T1)-T3 time, execution in step S305 then.
Said method in time spreads out of support plate to reaction chamber after making preheating cavity be heated to design temperature, avoid occurring the process that preheating cavity is waited for reaction chamber, the heating energy consumption of also having avoided heating system always to cause in work in this process has reduced the whole energy consumption of PECVD equipment.
Embodiment three:
Based on above content, for a kind of performance that can reduce PECVD equipment energy consumption method of the present invention is described, the test of carrying out with the board practical operation is the example comparative illustration below.At present the various operation required times of execution of board be (unit: second):
Preheating cavity receives support plate: 30
Preheating cavity is ready to: 30
Preheating cavity fully heats silicon chip to assigned temperature: 90
Process cavity receives support plate: 30
Process cavity is carried out technology: 240
Process cavity spreads out of support plate: 30
Prior art result of implementation (unit: second) as shown in the table:
Table 1
This paper result of implementation (unit: second) as shown in the table that proposes a plan:
Get T1=90, T2=270.
Table 2
As can be seen from the test results, implement method of the present invention, shortened half the heating time of preheating cavity, reduces the whole energy consumption of PECVD equipment.
Embodiment four:
To be example with Fig. 4 specify the another kind of implementation method of a kind of PECVD of reduction equipment energy consumption of the present invention present embodiment.
S401, beginning technology is carried out initialization;
Initialization mainly is that stand-by period T3 and the T4 initialization in the following step is set to 0;
S402, reaction chamber begins technology;
S403, whether detect has crucial chamber to be in service mode;
Reaction chamber begins after the technology, and whether detect has crucial chamber to be in independent maintenance state, does not have chamber to be in service mode if detect, then execution in step S404;
Be in service mode if detected chamber, then execution in step S408;
Wherein, described crucial chamber is meant reaction chamber, cooling chamber;
Whether S404 detects preheating cavity and is ready to;
Be ready to if detect preheating cavity, then execution in step S405;
If it is unripe to detect preheating cavity, execution in step S409 then;
S405 judges that whether T4 is less than (T2-T1);
If T4 is less than (T2-T1), execution in step S406 then;
If T4 is more than or equal to (T2-T1), execution in step S407 then;
S406 waits for (T2-T1-T4) time, continues step S407;
S407 starts the preheater heating system;
S408, the described crucial chamber of wait S403 is removed independent maintenance state, and record stand-by period T4 carries out S404 then;
S409 waits for that preheating cavity is ready to, record stand-by period T3;
S4010 judges that whether T3 is less than (T2-T1-T4);
If T3 is less than (T2-T1-T4), execution in step S4011 then;
If T3 is more than or equal to (T2-T1-T4), execution in step S407 then;
S4011 waits for (T2-T1)-T3 time, execution in step S407 then.
Said method has been avoided the automatic process implementation, do not stop under the situation of automatic process task, reaction chamber or cooling chamber are carried out independent maintenance work, and the unnecessary heating energy consumption that preheating cavity causes in heating always, further reduced the whole energy consumption of PECVD equipment.
Embodiment five:
At said method embodiment, the present invention also provides a kind of embodiment that can reduce the energy consumption of device for processing substrate device.
With reference to Fig. 5, be the described a kind of a kind of structure chart that can reduce the energy consumption of device for processing substrate device of present embodiment.Wherein, described substrate processing apparatus comprises preheating cavity and reaction chamber at least, and the support plate that transmits between described chamber.
Described a kind of energy consumption of device for processing substrate device that can reduce comprises:
First statistic unit 501 is used to add up the required time T 1 of preheating cavity heating;
Second statistic unit 502 is used to add up reaction chamber and carries out technology and spread out of the required time T of support plate 2;
Present embodiment is preferred, and described control start unit 503 comprises:
The first promoter unit 5031 is used to start the preheating cavity heating system;
Whether first detection sub-unit 5032 is used to detect preheating cavity and is ready to, if then the promoter cell delay T2-T1 time is restarted the preheating cavity heating system; If not, triggering timing subelement then;
The first timing subelement 5033, it is unripe to be used for detecting preheating cavity at detection sub-unit, record stand-by period T3; When T3＜(T2-T1), promoter unit 5031 postpones (T2-T1)-T3 times and restarts the preheating cavity heating system, otherwise promoter unit 5031 directly starts the preheating cavity heating system.
Present embodiment is preferred, and described first statistic unit 501 is with before this heating, and the maximum of preheating cavity heating required time is as time T 1;
Described second statistic unit 502 is with before this technology, and reaction chamber is carried out technology and spread out of the maximum of support plate required time as time T 2.
Described a kind of can the reduction in the energy consumption of device for processing substrate device of present embodiment, first statistic unit 501, time that statistics preheating cavity heating is required and with before this heating, the maximum of preheating cavity heating required time is as time T 1, second statistic unit 502, the statistics reaction chamber is carried out technology and is spread out of the required time of support plate and just before this technology, reaction chamber is carried out technology and is spread out of the maximum of support plate required time as time T 2, control start unit 503, whether detect preheating cavity is ready to, if then postpone the T2-T1 time and restart the preheating cavity heating system; If not, wait for that then preheating cavity is ready to, and record stand-by period T3; When T3＜(T2-T1), postpone (T2-T1)-T3 time and restart the preheating cavity heating system, otherwise directly start the preheating cavity heating system.This device in time spreads out of support plate to reaction chamber after making preheating cavity be heated to design temperature, thereby avoided occurring the process that preheating cavity is waited for reaction chamber, the heating energy consumption of also having avoided heating system always to cause in work in this process has reduced the whole energy consumption of PECVD equipment.
Embodiment six:
With reference to Fig. 6, be the described a kind of another kind of structure chart that can reduce the energy consumption of device for processing substrate device of present embodiment.Wherein, described substrate processing apparatus comprises preheating cavity and reaction chamber at least, and the support plate that transmits between described chamber.
Described a kind of PECVD equipment energy consumption device that can reduce comprises:
First statistic unit 601 is used to add up the required time T 1 of preheating cavity heating;
Second statistic unit 602 is used to add up reaction chamber and carries out technology and spread out of the required time T of support plate 2;
Control start unit 603 after being used for reaction chamber and beginning technology, postpones startup opportunity of preheating cavity heating system according to time T 1 and T2, in time spreads out of support plate to reaction chamber after making preheating cavity be heated to design temperature.
Present embodiment is preferred, and described control start unit 603 comprises:
The second promoter unit 6031 is used to start the preheating cavity heating system;
Second detection sub-unit 6032, after being used for reaction chamber and beginning technology, whether have crucial chamber be in independent maintenance state, if then trigger the second timing subelement if detecting; If not, then trigger the 3rd detection sub-unit;
The second timing subelement 6033 is used for having detected crucial chamber at second detection sub-unit and is in independent maintenance state, record stand-by period T4;
Whether the 3rd detection sub-unit 6034 is used to detect preheating cavity and is ready to, if then as the T4 of second timing subelement record during less than (T2-T1), second promoter cell delay (T2-T1-T4) time was restarted the preheating cavity heating system; As the T4 of second timing subelement record during more than or equal to (T2-T1), the second promoter unit directly starts the preheating cavity heating system; If not, then trigger the 3rd timing subelement;
The 3rd timing list 6035, it is unripe to be used for detecting preheating cavity at the 3rd detection sub-unit, record stand-by period T3; As T3 during less than (T2-T1-T4), second promoter cell delay (T2-T1)-T3 time was restarted the preheating cavity heating system; Otherwise the second promoter unit directly starts the preheating cavity heating system.
Present embodiment is preferred, and described first statistic unit 601 is with before this heating, and the maximum of preheating cavity heating required time is as time T 1;
Described second statistic unit 602 is with before this technology, and reaction chamber is carried out technology and spread out of the maximum of support plate required time as time T 2.
Described a kind of can the reduction in the energy consumption of device for processing substrate device of present embodiment, first statistic unit 601, time that statistics preheating cavity heating is required and with before this heating, the maximum of preheating cavity heating required time is as time T 1, second statistic unit 602, the statistics reaction chamber is carried out technology and is spread out of the required time of support plate and just before this technology, reaction chamber is carried out technology and is spread out of the maximum of support plate required time as time T 2, control start unit 603, whether be used for reaction chamber begins to detect after the technology and has crucial chamber to be in independent maintenance state, if, wait for then that described crucial chamber is finished to remove independent maintenance state, and record stand-by period T4; If not, then detect preheating cavity and whether be ready to, if whether then judge T4 less than (T2-T1), if restart the preheating cavity heating system less than then postponing (T2-T1-T4) time; If more than or equal to then directly starting the preheating cavity heating system; If not, wait for that then preheating cavity is ready to, whether record stand-by period T3 judges T3 less than (T2-T1-T4), if restart the preheating cavity heating system less than then postponing (T2-T1)-T3 time, as if more than or equal to then directly starting the preheating cavity heating system.This device in time spreads out of support plate to reaction chamber after making preheating cavity be heated to design temperature, thereby avoided occurring the process that preheating cavity is waited for reaction chamber, the heating energy consumption of also having avoided heating system always to cause in work in this process has reduced the whole energy consumption of substrate processing apparatus.
Each embodiment in this specification all adopts the mode of going forward one by one to describe, and what each embodiment stressed all is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.For system embodiment, because it is similar substantially to method embodiment, so description is fairly simple, relevant part gets final product referring to the part explanation of method embodiment.
More than to a kind of method and system that reduce energy consumption of device for processing substrate provided by the present invention, be described in detail, used specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof; Simultaneously, for one of ordinary skill in the art, according to thought of the present invention, the part that all can change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention.
Claims (10)
1, a kind of method that reduces energy consumption of device for processing substrate, described substrate processing apparatus comprises preheating cavity and reaction chamber at least, and the support plate that transmits between described chamber, it is characterized in that, described method comprises:
The required time T 1 of statistics preheating cavity heating, and reaction chamber is carried out technology and is spread out of the required time T of support plate 2; Wherein, T2＞T1;
After reaction chamber begins technology, postpone startup opportunity of preheating cavity heating system, in time spread out of support plate to reaction chamber after making preheating cavity be heated to design temperature according to time T 1 and T2.
2, method according to claim 1 is characterized in that, postpones the startup opportunity of preheating cavity heating system in the following manner:
Detect preheating cavity and whether be ready to, if then postpone the T2-T1 time and restart the preheating cavity heating system;
If not, wait for that then preheating cavity is ready to, and record stand-by period T3; When T3＜(T2-T1), postpone (T2-T1)-T3 time and restart the preheating cavity heating system, otherwise directly start the preheating cavity heating system.
3, method according to claim 1 is characterized in that, postpones the startup opportunity of preheating cavity heating system in the following manner:
Whether detect has crucial chamber to be in independent maintenance state, if, wait for that then described crucial chamber removes independent maintenance state, and record stand-by period T4, continue to detect preheating cavity then and whether be ready to; Whether if not, then directly detect preheating cavity is ready to;
If preheating cavity is ready to, whether then judge T4 less than (T2-T1), if less than, then delay (T2-T1-T4) time is restarted the preheating cavity heating system; If more than or equal to, then directly start the preheating cavity heating system;
If preheating cavity is unripe, wait for that then preheating cavity is ready to, record stand-by period T3, whether judge T3 less than (T2-T1-T4), if less than, then delay (T2-T1)-T3 time is restarted the preheating cavity heating system, if more than or equal to, then directly start the preheating cavity heating system.
4, according to claim 2 or 3 described methods, it is characterized in that: described preheating cavity is ready to be meant that preheating cavity finishes from prepare receiving support plate required work before the heating.
5, method according to claim 1 is characterized in that, in the following manner timing statistics T1 and T2:
At time T 1, get before this heating the maximum of preheating cavity heating required time;
At time T 2, to get before this technology, reaction chamber is carried out technology and is spread out of the maximum of support plate required time.
6, a kind of device that reduces energy consumption of device for processing substrate, described substrate processing apparatus comprises preheating cavity and reaction chamber at least, and the support plate that transmits between described chamber, it is characterized in that, described device comprises:
First statistic unit is used to add up the required time T 1 of preheating cavity heating;
Second statistic unit is used to add up reaction chamber and carries out technology and spread out of the required time T of support plate 2;
The control start unit after being used for reaction chamber and beginning technology, postpones startup opportunity of preheating cavity heating system according to time T 1 and T2, in time spreads out of support plate to reaction chamber after making preheating cavity be heated to design temperature.
7, device according to claim 6 is characterized in that, described control start unit comprises:
The first promoter unit is used to start the preheating cavity heating system;
Whether first detection sub-unit after being used for reaction chamber and beginning technology, detects preheating cavity and is ready to, if then the first promoter cell delay T2-T1 time was restarted the preheating cavity heating system; If not, then trigger the first timing subelement;
The first timing subelement, it is unripe to be used for detecting preheating cavity at first detection sub-unit, record stand-by period T3; When T3＜(T2-T1), first promoter cell delay (T2-T1)-T3 time was restarted the preheating cavity heating system, otherwise the first promoter unit directly starts the preheating cavity heating system.
8, device according to claim 6 is characterized in that, described control start unit comprises:
The second promoter unit is used to start the preheating cavity heating system;
Second detection sub-unit, after being used for reaction chamber and beginning technology, whether have crucial chamber be in independent maintenance state, if then trigger the second timing subelement if detecting; If not, then trigger the 3rd detection sub-unit;
The second timing subelement is used for having detected crucial chamber at second detection sub-unit and is in independent maintenance state, record stand-by period T4;
Whether the 3rd detection sub-unit is used to detect preheating cavity and is ready to, if then as the T4 of second timing subelement record during less than (T2-T1), second promoter cell delay (T2-T1-T4) time was restarted the preheating cavity heating system; As the T4 of second timing subelement record during more than or equal to (T2-T1), the second promoter unit directly starts the preheating cavity heating system; If not, then trigger the 3rd timing subelement;
The 3rd timing subelement, it is unripe to be used for detecting preheating cavity at the 3rd detection sub-unit, record stand-by period T3; As T3 during less than (T2-T1-T4), second promoter cell delay (T2-T1)-T3 time was restarted the preheating cavity heating system; Otherwise the second promoter unit directly starts the preheating cavity heating system.
9, according to claim 7 or 8 described devices, it is characterized in that: described preheating cavity is ready to be meant that preheating cavity finishes from prepare receiving support plate required work before the heating.
10, device according to claim 6 is characterized in that:
Described first statistic unit is with before this heating, and the maximum of preheating cavity heating required time is as time T 1;
Described second statistic unit is with before this technology, and reaction chamber is carried out technology and spread out of the maximum of support plate required time as time T 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100887334A CN101599422B (en) | 2009-07-10 | 2009-07-10 | Method and system for reducing energy consumption of device for processing substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100887334A CN101599422B (en) | 2009-07-10 | 2009-07-10 | Method and system for reducing energy consumption of device for processing substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101599422A true CN101599422A (en) | 2009-12-09 |
| CN101599422B CN101599422B (en) | 2011-07-06 |
Family
ID=41420807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100887334A Active CN101599422B (en) | 2009-07-10 | 2009-07-10 | Method and system for reducing energy consumption of device for processing substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101599422B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102782183A (en) * | 2009-11-30 | 2012-11-14 | 米兰比可卡大学 | Method and apparatus for depositing nanostructured thin layers with controlled morphology and nanostructure |
| CN102877041A (en) * | 2011-07-14 | 2013-01-16 | 中国科学院微电子研究所 | Film deposition method |
-
2009
- 2009-07-10 CN CN2009100887334A patent/CN101599422B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102782183A (en) * | 2009-11-30 | 2012-11-14 | 米兰比可卡大学 | Method and apparatus for depositing nanostructured thin layers with controlled morphology and nanostructure |
| CN102782183B (en) * | 2009-11-30 | 2014-12-03 | 米兰比可卡大学 | Method and apparatus for depositing nanostructured thin layers with controlled morphology and nanostructure |
| CN102877041A (en) * | 2011-07-14 | 2013-01-16 | 中国科学院微电子研究所 | Film deposition method |
| CN102877041B (en) * | 2011-07-14 | 2014-11-19 | 中国科学院微电子研究所 | Film deposition method and manufacturing method of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101599422B (en) | 2011-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8909364B2 (en) | Substrate processing system and substrate processing method | |
| CN107068585A (en) | Dynamic precursor dosing for ald | |
| CN101599422B (en) | Method and system for reducing energy consumption of device for processing substrate | |
| KR20070049629A (en) | Substrate recovery method and substrate processing apparatus | |
| CN101874293B (en) | Method for plasma deposition and plasma CVD system | |
| CN105986251A (en) | PECVD system | |
| CN105336652A (en) | Silicon wafer transmission control method and system | |
| KR20110134273A (en) | Control system of substrate processing apparatus, collection unit, substrate processing apparatus and control method of substrate processing apparatus | |
| KR101061645B1 (en) | Substrate processing apparatus, substrate processing method and computer readable recording medium | |
| CN102560435A (en) | Heating control method, device, system and PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment | |
| CN103199032A (en) | Gelatinized developing device with clustered structure | |
| CN101615025A (en) | A kind of maintenance control method and system that is used for semiconductor processing equipment | |
| JP2015156426A (en) | Substrate processing apparatus, program and substrate processing method | |
| CN102644063A (en) | Equipment for realizing atomic layer deposition process | |
| US8980366B2 (en) | Conditioning method, computer readable storage medium and substrate processing apparatus | |
| CN101901739A (en) | Substrate cooling method, substrate cooling system and substrate processing device | |
| US20070176265A1 (en) | Substrate processing apparatus | |
| CN102560441A (en) | Heating control method, heating control device, heating control system, heating cavity and plasma device | |
| CN202610319U (en) | Equipment for implementing atomic layer deposition process | |
| CN103184413A (en) | Vacuum coater and vacuum coating method | |
| JP4718964B2 (en) | Plasma CVD apparatus and temperature maintaining method for plasma CVD apparatus | |
| JP2009076495A (en) | Vacuum processing apparatus | |
| CN220092386U (en) | Degumming system for cut silicon single crystal rod | |
| CN217879984U (en) | Dry-method photoresist removing equipment | |
| CN103579058A (en) | Method for achieving multi-batch continuous operation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100176 Beijing economic and Technological Development Zone, Beijing, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, East Jiuxianqiao Road, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CP03 | Change of name, title or address |