CN101587918A - 冶金级多晶硅太阳能电池磷扩散工艺 - Google Patents
冶金级多晶硅太阳能电池磷扩散工艺 Download PDFInfo
- Publication number
- CN101587918A CN101587918A CNA2009100297110A CN200910029711A CN101587918A CN 101587918 A CN101587918 A CN 101587918A CN A2009100297110 A CNA2009100297110 A CN A2009100297110A CN 200910029711 A CN200910029711 A CN 200910029711A CN 101587918 A CN101587918 A CN 101587918A
- Authority
- CN
- China
- Prior art keywords
- diffusion
- high temperature
- phosphorus
- crystal boundary
- grain boundary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 21
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 24
- 239000011574 phosphorus Substances 0.000 claims abstract description 24
- 238000005247 gettering Methods 0.000 claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 230000008021 deposition Effects 0.000 claims abstract description 15
- 230000007547 defect Effects 0.000 claims abstract description 4
- 239000013078 crystal Substances 0.000 claims description 42
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000002425 crystallisation Methods 0.000 claims description 2
- 230000008025 crystallization Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 2
- 239000002131 composite material Substances 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000002184 metal Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100297110A CN101587918B (zh) | 2009-04-02 | 2009-04-02 | 冶金级多晶硅太阳能电池磷扩散工艺 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009100297110A CN101587918B (zh) | 2009-04-02 | 2009-04-02 | 冶金级多晶硅太阳能电池磷扩散工艺 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101587918A true CN101587918A (zh) | 2009-11-25 |
CN101587918B CN101587918B (zh) | 2011-03-30 |
Family
ID=41372056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100297110A Active CN101587918B (zh) | 2009-04-02 | 2009-04-02 | 冶金级多晶硅太阳能电池磷扩散工艺 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101587918B (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011156961A1 (zh) * | 2010-06-18 | 2011-12-22 | 常州天合光能有限公司 | 多晶硅的两步吸杂工艺 |
CN102509748A (zh) * | 2011-11-30 | 2012-06-20 | 合肥晶澳太阳能科技有限公司 | 一种降低冶金级硅太阳能电池暗电流的扩散工艺 |
CN102903619A (zh) * | 2012-10-31 | 2013-01-30 | 湖南红太阳光电科技有限公司 | 一种实现深结低表面浓度的晶体硅扩散工艺 |
CN103117328A (zh) * | 2013-02-01 | 2013-05-22 | 内蒙古日月太阳能科技有限责任公司 | 冶金多晶硅片磷吸杂方法及该法制成的硅片和太阳能电池 |
CN103531449A (zh) * | 2013-10-29 | 2014-01-22 | 宁夏银星能源股份有限公司 | 一种能提升冶金级硅片少子寿命的扩散工艺 |
CN104103713A (zh) * | 2013-04-12 | 2014-10-15 | 国际商业机器公司 | 用于多晶薄膜太阳能电池的保护性绝缘层和化学机械抛光 |
CN104120494A (zh) * | 2014-06-25 | 2014-10-29 | 上饶光电高科技有限公司 | 一种适用于提升晶体硅太阳能电池转换效率的扩散工艺 |
CN110164759A (zh) * | 2019-04-25 | 2019-08-23 | 横店集团东磁股份有限公司 | 一种区域性分层沉积扩散工艺 |
CN113161446A (zh) * | 2021-02-07 | 2021-07-23 | 福建新峰二维材料科技有限公司 | 一种铸造单晶或多晶类硅片的两步扩散预处理方法 |
US11527669B2 (en) | 2012-11-26 | 2022-12-13 | International Business Machines Corporation | Atomic layer deposition for photovoltaic devices |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102703987B (zh) * | 2012-06-08 | 2015-03-11 | 天威新能源控股有限公司 | 基于多晶硅中金属杂质去除的低温磷吸杂扩散工艺 |
-
2009
- 2009-04-02 CN CN2009100297110A patent/CN101587918B/zh active Active
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011156961A1 (zh) * | 2010-06-18 | 2011-12-22 | 常州天合光能有限公司 | 多晶硅的两步吸杂工艺 |
CN102509748A (zh) * | 2011-11-30 | 2012-06-20 | 合肥晶澳太阳能科技有限公司 | 一种降低冶金级硅太阳能电池暗电流的扩散工艺 |
CN102903619B (zh) * | 2012-10-31 | 2014-11-19 | 湖南红太阳光电科技有限公司 | 一种实现深结低表面浓度的晶体硅扩散工艺 |
CN102903619A (zh) * | 2012-10-31 | 2013-01-30 | 湖南红太阳光电科技有限公司 | 一种实现深结低表面浓度的晶体硅扩散工艺 |
US11527669B2 (en) | 2012-11-26 | 2022-12-13 | International Business Machines Corporation | Atomic layer deposition for photovoltaic devices |
CN103117328B (zh) * | 2013-02-01 | 2016-05-25 | 内蒙古日月太阳能科技有限责任公司 | 冶金多晶硅片磷吸杂方法及该法制成的硅片和太阳能电池 |
CN103117328A (zh) * | 2013-02-01 | 2013-05-22 | 内蒙古日月太阳能科技有限责任公司 | 冶金多晶硅片磷吸杂方法及该法制成的硅片和太阳能电池 |
CN104103713A (zh) * | 2013-04-12 | 2014-10-15 | 国际商业机器公司 | 用于多晶薄膜太阳能电池的保护性绝缘层和化学机械抛光 |
CN104103713B (zh) * | 2013-04-12 | 2017-04-12 | 国际商业机器公司 | 用于多晶薄膜太阳能电池的保护性绝缘层和化学机械抛光 |
US9741890B2 (en) | 2013-04-12 | 2017-08-22 | International Business Machines Corporation | Protective insulating layer and chemical mechanical polishing for polycrystalline thin film solar cells |
CN103531449B (zh) * | 2013-10-29 | 2016-03-02 | 宁夏银星能源股份有限公司 | 一种能提升冶金级硅片少子寿命的扩散工艺 |
CN103531449A (zh) * | 2013-10-29 | 2014-01-22 | 宁夏银星能源股份有限公司 | 一种能提升冶金级硅片少子寿命的扩散工艺 |
CN104120494A (zh) * | 2014-06-25 | 2014-10-29 | 上饶光电高科技有限公司 | 一种适用于提升晶体硅太阳能电池转换效率的扩散工艺 |
CN110164759A (zh) * | 2019-04-25 | 2019-08-23 | 横店集团东磁股份有限公司 | 一种区域性分层沉积扩散工艺 |
CN113161446A (zh) * | 2021-02-07 | 2021-07-23 | 福建新峰二维材料科技有限公司 | 一种铸造单晶或多晶类硅片的两步扩散预处理方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101587918B (zh) | 2011-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101587918B (zh) | 冶金级多晶硅太阳能电池磷扩散工艺 | |
CN106057980B (zh) | 一种晶体硅太阳能电池的磷扩散方法 | |
CN102703987B (zh) | 基于多晶硅中金属杂质去除的低温磷吸杂扩散工艺 | |
CN100573928C (zh) | 一种制造太阳能电池的磷扩散方法 | |
CN102593262B (zh) | 一种多晶硅选择性发射极太阳能电池的扩散方法 | |
CN101834224B (zh) | 一种用于太阳电池制造的硅片快速热处理磷扩散吸杂工艺 | |
CN102509748A (zh) | 一种降低冶金级硅太阳能电池暗电流的扩散工艺 | |
CN104404626B (zh) | 物理冶金多晶硅太阳能电池的磷扩散方法 | |
CN103715308A (zh) | 一种多晶硅太阳能电池低温变温扩散工艺 | |
CN102766908A (zh) | 晶体硅太阳能电池的硼扩散方法 | |
JP2014531766A (ja) | 太陽電池シート及びその熱処理プロセス | |
CN111162143B (zh) | 一种高效率perc太阳能电池及其制备方法 | |
CN103066156A (zh) | 一种应用于晶体硅太阳电池中的制备发射极的扩散工艺 | |
CN105280484A (zh) | 一种晶硅高效高方阻电池片的扩散工艺 | |
CN102719894A (zh) | 太阳能电池硅片的磷扩散工艺 | |
CN103632934A (zh) | N型硅片的硼扩散方法、晶体硅太阳能电池及其制作方法 | |
CN103632933A (zh) | N型硅片的硼扩散方法、晶体硅太阳能电池及其制作方法 | |
CN102593264A (zh) | 一种提高太阳能电池效率的扩散工艺 | |
JP2004289058A (ja) | 光起電力装置の製造方法 | |
CN104143503A (zh) | 掺杂方法 | |
CN106229362B (zh) | 一种铜铟镓硒薄膜制备方法及铜铟镓硒薄膜 | |
CN109545673B (zh) | 一种晶体硅太阳电池用无氧扩散方法 | |
CN101597794A (zh) | 一种镓和锗共掺的直拉硅单晶 | |
CN101783289B (zh) | 反型外延片制备方法 | |
CN108010842A (zh) | 快恢复二极管的制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Sheng Jian Inventor after: Gao Jifan Inventor after: Ding Jianning Inventor before: Sheng Jian |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |