CN101587831B - 半导体元件结构及半导体元件的制造方法 - Google Patents
半导体元件结构及半导体元件的制造方法 Download PDFInfo
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- CN101587831B CN101587831B CN2008100978593A CN200810097859A CN101587831B CN 101587831 B CN101587831 B CN 101587831B CN 2008100978593 A CN2008100978593 A CN 2008100978593A CN 200810097859 A CN200810097859 A CN 200810097859A CN 101587831 B CN101587831 B CN 101587831B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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CN2008100978593A CN101587831B (zh) | 2008-05-19 | 2008-05-19 | 半导体元件结构及半导体元件的制造方法 |
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CN2008100978593A CN101587831B (zh) | 2008-05-19 | 2008-05-19 | 半导体元件结构及半导体元件的制造方法 |
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CN101587831A CN101587831A (zh) | 2009-11-25 |
CN101587831B true CN101587831B (zh) | 2013-01-16 |
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CN2008100978593A Expired - Fee Related CN101587831B (zh) | 2008-05-19 | 2008-05-19 | 半导体元件结构及半导体元件的制造方法 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102255023A (zh) * | 2010-05-19 | 2011-11-23 | 展晶科技(深圳)有限公司 | 发光二极管及其制造方法 |
CN102263155B (zh) * | 2010-05-25 | 2013-05-08 | 亚洲太阳科技有限公司 | 薄膜太阳能电池芯片工艺方法 |
CN102280534A (zh) * | 2011-07-06 | 2011-12-14 | 上海蓝光科技有限公司 | 预处理蓝宝石衬底提高led出光效率的方法 |
CN106783533B (zh) * | 2016-11-11 | 2020-01-07 | 上海芯元基半导体科技有限公司 | 含Al氮化物半导体结构及其外延生长方法 |
CN109962037A (zh) * | 2017-12-24 | 2019-07-02 | 成都海存艾匹科技有限公司 | 采用不连续边界结构的半导体基板 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1305639A (zh) * | 1998-06-10 | 2001-07-25 | 北卡罗莱纳州立大学 | 利用始于沟槽侧壁的横向生长来制造氮化镓半导体层 |
CN1638041A (zh) * | 2003-12-31 | 2005-07-13 | Lg电子有限公司 | 低缺陷氮化物半导体薄膜及其生长方法 |
CN1675746A (zh) * | 2002-07-11 | 2005-09-28 | 爱尔兰国家大学科克学院 | 减少半导体材料中的缺陷 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1305639A (zh) * | 1998-06-10 | 2001-07-25 | 北卡罗莱纳州立大学 | 利用始于沟槽侧壁的横向生长来制造氮化镓半导体层 |
CN1675746A (zh) * | 2002-07-11 | 2005-09-28 | 爱尔兰国家大学科克学院 | 减少半导体材料中的缺陷 |
CN1638041A (zh) * | 2003-12-31 | 2005-07-13 | Lg电子有限公司 | 低缺陷氮化物半导体薄膜及其生长方法 |
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Owner name: RONGCHUANG ENERGY TECHNOLOGY CO., LTD. Owner name: ZHANJING TECHNOLOGY (SHENZHEN) CO., LTD. Free format text: FORMER OWNER: ADVANCED DEVELOPMENT PHOTOELECTRIC CO., LTD. Effective date: 20101117 |
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