CN101578688A - Apparatus and method for processing substrate - Google Patents
Apparatus and method for processing substrate Download PDFInfo
- Publication number
- CN101578688A CN101578688A CNA2008800019551A CN200880001955A CN101578688A CN 101578688 A CN101578688 A CN 101578688A CN A2008800019551 A CNA2008800019551 A CN A2008800019551A CN 200880001955 A CN200880001955 A CN 200880001955A CN 101578688 A CN101578688 A CN 101578688A
- Authority
- CN
- China
- Prior art keywords
- substrate
- treatment fluid
- mentioned
- nano bubble
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
Provided is a processing apparatus for processing a substrate by using a processing solution. The substrate processing apparatus is provided with a nano bubble generating means, which generates nano bubbles and mixes the nano bubbles in the processing solution; a processing solution supplying means for supplying the processing solution including the nano bubbles generated by the nano bubble generating means onto the board surface of the substrate; a pressurizing means which pressurizes the nano bubbles included in the processing solution supplied onto the board surface of the substrate by the processing solution supplying means and crushesthem with pressure with the board surface of the substrate.
Description
Technical field
The present invention relates to processing unit and processing method that the substrate of glass substrate of semiconductor wafer, liquid crystal indicator being used by treatment fluid etc. is handled.
Background technology
Under the situation of making semiconductor device, liquid crystal indicator etc., use circuit pattern is formed on photoetching process (lithography process) on the substrate of semiconductor wafer, glass substrate etc.As well-known, this photoetching process applies resist on aforesaid substrate, across the mask that is formed with circuit pattern to this resist irradiates light.
Then, remove in the resist not part that is mapped to by illumination or the part that is mapped to by illumination, the part of removing is carried out a series of operation of repeatedly etching etc. repeatedly, thereby on aforesaid substrate, form circuit pattern.
In above-mentioned a series of each engineering, if aforesaid substrate is contaminated, then becoming to form accurate circuit pattern, and this becomes the reason that produces substandard product.Therefore, need to use the treatment fluid corresponding to carry out processing substrate, when for example on substrate, forming circuit pattern, remove in advance and on substrate, adhere to residual organic, resist etc. with processing intent.Employed treatment fluid is known in processing substrate pure water, etching solution, stripper, a developer solution etc.
On the other hand, coming with treatment fluid under the situation of treatment substrate, only there is certain limit in the treatment effeciency to substrate inject process liquid, therefore, in order to improve this treatment effeciency, utilizes the gas-pressurized of nitrogen etc. to come treatment fluid is pressurizeed, again inject process liquid.Thus, the use amount of treatment fluid can be reduced, the reduction of cost can be realized.
Recently, not only treatment fluid is pressurizeed,, thereby improve the treatment effeciency of above-mentioned treatment fluid also by gas being become small bubble and be mixed in the treatment fluid by gas-pressurized.In patent documentation 1, disclose and in treatment fluid, mixed the processing unit that microbubble (micro bubble) improves treatment effeciency.
That is, the processing unit shown in the patent documentation 1 has the mixing pump that imports pure water and nitrogen.Pure water and nitrogen are mixed in gas-liquid mixing pump, and are sent to the rotation accelerator.The rotation accelerator makes pure water and nitrogen quicken rotation, thereby forms gas-liquid 2 laminar flows, and sends to disperser.Gas-liquid 2 laminar flows that disperser utilizes fluid mechanics to shear to send here, thus the microbubble of nitrogen formed.Then, the pure water that contains microbubble is sent to treatment trough and comes treatment substrate.
Patent documentation 1: TOHKEMY 2006-179765 communique
In general, the diameter of the microbubble shown in the patent documentation 1 is 10～100 μ m.Because the diameter of microbubble is big, thereby is subjected to buoyancy, rises in liquid, and breaks and disappear at the liquid level place.
Relative therewith and since the diameter nano bubble (nano bubble) that to be 1 μ m following in force down, therefore in water, be subjected to buoyancy hardly.Therefore, when nano bubble swims in liquid, under the effect of external pressure, can dwindle.If nano bubble dwindles, then its surface charge concentrates along with dwindling of surface area, thereby forms extremely strong electric field.
Because the highfield of nano bubble can make this nano bubble activate, thereby can be existed the liquid of nano bubble to bring bigger influence.Therefore, if contain nano bubble in the treatment fluid of treatment substrate, then utilize this treatment fluid to come the treatment effect of treatment substrate significantly to improve.
As mentioned above, processing unit shown in the patent documentation 1 is after by gas-liquid mixing pump mixing nitrogen and pure water, form gas-liquid 2 laminar flows, in disperser, utilize fluid mechanics to shear gas-liquid 2 laminar flows then thereby make it quicken rotation, thereby form the microbubble of nitrogen by the rotation accelerator.
Promptly, in the processing unit shown in the patent documentation 1, promptly allow to form the microbubble that diameter is 10～100 μ m degree by gas-liquid mixing pump, rotation accelerator and disperser, also need to make the nitrogen and the pure water that are pre-mixed become gas-liquid 2 layer fluid, in disperser, utilize fluid mechanics to shear gas-liquid 2 layer fluid then by the rotation accelerator.
Therefore, because nitrogen dissolves in the pure water in the rotation accelerator, even utilize fluid mechanics to shear gas-liquid 2 layer fluid that in the rotation accelerator, form by disperser, can not produce microbubble efficiently, and in patent documentation 1, openly do not produce the method for nano bubble, and nano bubble is more effective than microbubble in the processing of substrate.
Summary of the invention
The objective of the invention is to, can efficiently produce the processing unit and the processing method of substrate that improves the treatment effeciency of substrate than the little nano bubble of microbubble diameter thereby provide a kind of.
In order to solve above-mentioned problem, the invention provides a kind of processing unit of substrate, come treatment substrate by treatment fluid, it is characterized in that possessing: nano bubble produces mechanism, is used to produce nano bubble, and this nano bubble is mixed with above-mentioned treatment fluid; The treatment fluid feed mechanism is supplied with the above-mentioned treatment fluid that contains this nano bubble generation nano bubble that mechanism produced to the plate face of aforesaid substrate; And pressing mechanism, the nano bubble that is contained in the treatment fluid that the plate face of aforesaid substrate is supplied with by this treatment fluid feed mechanism is pressurizeed, and crush described nano bubble at the plate face of aforesaid substrate.
In addition, the invention provides a kind of processing method of substrate, come treatment substrate, it is characterized in that, comprising by treatment fluid: produce nano bubble, and the operation that this nano bubble is mixed with above-mentioned treatment fluid; Supply with the operation of the above-mentioned treatment fluid that contains nano bubble to the plate face of aforesaid substrate; And the nano bubble that is contained in the treatment fluid supplied with of the plate face of subtend aforesaid substrate pressurizes, and crushes the operation of described nano bubble at the plate face of aforesaid substrate.
Description of drawings
Fig. 1 is the summary pie graph of the processing unit of expression first execution mode of the present invention.
Fig. 2 is the axial sectional drawing along the gas clipper.
Fig. 3 is the end view of the observed gas clipper from the rear end.
Fig. 4 is the pie graph of summary of spin (spin) processing unit of expression second execution mode of the present invention.
Fig. 5 is the pie graph of summary of the spin processing unit of expression the 3rd execution mode of the present invention.
Fig. 6 is the pie graph of summary of the horizontal transportation processing device of expression the 4th execution mode of the present invention.
Fig. 7 is the pie graph of summary of the horizontal transportation processing device of expression the 5th execution mode of the present invention.
Fig. 8 is the pie graph of summary of the horizontal transportation processing device of expression the 6th execution mode of the present invention.
Fig. 9 is the pie graph of summary of the horizontal transportation processing device of expression the 7th execution mode of the present invention.
Figure 10 is the pie graph of summary of the horizontal transportation processing device of expression the 8th execution mode of the present invention.
Embodiment
Below, with reference to accompanying drawing embodiments of the present invention are described.
Fig. 1～Fig. 3 shows first execution mode of the present invention, and Fig. 1 is the pie graph of the summary of expression processing unit, and this processing unit possesses treatment trough 1.In this treatment trough 1, dispose and constitute the gas clipper 2 that nano bubble produces mechanism.This gas clipper 2 has the main body 4 of the hollow form that is formed with fluid shear chamber 3 in inside as shown in Figure 2.
One end of above-mentioned fluid shear chamber 3 is communicated with the jet 5 that forms at the axial forward end face of aforementioned body 4, and the other end is communicated with gas supply port 6 in the rear end face formation of aforementioned body 4.Above-mentioned fluid shear chamber 3 is formed by 3a of back space portion and the 3b of front space portion, the described back space 3a of portion begins the truncated cone shape of end middle part hole enlargement backward from the rear end that is communicated with above-mentioned gas supply port 6, the described front space 3b of portion begins forward end undergauge and form truncated cone shape gradually from the 3a of this back space portion, is formed with liquid supply port 7 in the outer peripheral face upper shed of aforementioned body 4 at the boundary member of the 3a of back space portion of above-mentioned fluid shear chamber 3 and the 3b of front space portion.
Be provided with gas rotation tube head (mouthful gold) 11 at above-mentioned gas supply port 6 places.This gas rotation connects with the other end of the gas supply pipe 13 that is connected gas supply pump 12 with an end of tube head 11.Middle part at this gas supply pipe 13 is provided with first open and close valve 14.The attraction side of above-mentioned gas supply pump 12 is connected with the gas supply source of not shown high-pressure oxygen cylinder etc.This gas supply source is used to supply with oxygen.
Though at length rotation does not illustrate with tube head 11 to above-mentioned gas, the inside that rotates with tube head 11 at this gas is formed with helicla flute.Thus, if open above-mentioned first open and close valve 14, then make the oxygen rotation of supplying with from above-mentioned gas supply pump 12 via above-mentioned gas supply pipe 13, and spray to anterior spatial portion 3b from the 3a of back space portion of above-mentioned fluid shear chamber 3, in above-mentioned fluid shear chamber 3, form the gas blank part 15 of the oxygen shown in the chain-dotted line of Fig. 2.In this embodiment, gas rotation makes above-mentioned gas rotate along the counter clockwise direction when the rear end side of aforementioned body 4 is observed with the helicla flute of tube head 11.The direction of rotation of gas is shown in the arrow a among Fig. 2.
Feed tube for liquid head 16 is connected with aforesaid liquid supply port 7, and as shown in Figure 3 feed tube for liquid head 16 with respect to the circumferencial direction of main body 4 cant angle theta 1 angle along clockwise direction, and as shown in Figure 2 with respect to axis direction side cant angle theta 2 angles to the back-end.
The end that aforesaid liquid is supplied with tube head 16 connects with the other end of the feed tube for liquid 18 that is connected liquid supply pump 17.Middle part at this feed tube for liquid 18 is provided with second open and close valve 19.The attraction side of aforesaid liquid supply pump 17 is connected with the bottom of above-mentioned treatment trough 1.Be equipped with pure water L in this treatment trough 1 as treatment fluid.
Thus, if open above-mentioned second open and close valve 19, then aforesaid liquid supply pump 17 is supplied with pure water L via aforesaid liquid supply pipe 18 to above-mentioned gas clipper 2, the tilt angle theta 1 of supplying with tube head 16 owing to aforesaid liquid makes pure water L and above-mentioned oxygen in the same manner along footpath direction rotation counterclockwise, and owing to the tilt angle theta 2 of aforesaid liquid supply tube head 16 makes pure water L be supplied to the direction of advancing to anterior spatial portion 3b side.
By above-mentioned gas supply pump 12, the supply pressure of oxygen is set to P1, and by aforesaid liquid supply pump 17, the supply pressure of pure water L is set to P2.P1, P2 are set at P1＜P2.Thus, the relation of the rotary speed V2 of the rotary speed V1 of the oxygen of supplying with to the fluid shear chamber 3 of aforementioned body 4 and pure water L is V1＜V2.
The supply pressure P2 of the supply pressure P1 of the oxygen that sets in the present embodiment, and pure water L makes that the rotary speed V1 of oxygen is that per second 400 changes, the rotary speed V2 of pure water L is that per second 600 changes.
The oxygen of supplying with from the axial rearward end of above-mentioned fluid shear chamber 3 becomes the gas blank part 15 that rotates and advances to jet 5 shown in arrow a.The pure water L that supplies with from the outer peripheral face of above-mentioned fluid shear chamber 3 rotates at the outer peripheral face of the gas blank part 15 of the oxygen of rotation, advances to above-mentioned jet 5 simultaneously.The direction of rotation of pure water is shown in the arrow b of Fig. 2.
The rotary speed V1 of oxygen is set at slower than the rotary speed V2 of pure water L.Therefore, the rotary speed by oxygen and pure water L poor, pure water L utilizes fluid mechanics to shear oxygen, comes oxygenous nano bubble by this shear action.Then, spray the pure water L of the nano bubble that comprises oxygen from the jet 5 of the front end of above-mentioned fluid shear chamber 3.In addition, faster even the rotary speed V1 of oxygen is set at than the rotary speed V2 of pure water L, also can come oxygenous nano bubble by hydromechanical shear action.
Around the gas blank part 15 of the oxygen of pure water L fluid shear chamber 3 in that above-mentioned fluid shear chamber 3 is supplied with, rotate, utilize fluid mechanics to shear oxygen.That is, in fluid shear chamber 3, oxygen and pure water L mix and pure water L in dissolve in oxygen before, thereby shear oxygen nano bubble is produced, can improve the generation efficient of nano bubble.
The 3b of front space portion of above-mentioned fluid shear chamber 3 forms the cone shape to jet 5 undergauges.Therefore, because the long-pending Minus of its body is few when being supplied to the oxygen of fluid shear chamber 3 and pure water L and forwardly advancing among the spatial portion 3b, therefore press power Minus to obtain restriction less.
Therefore, pure water L keeps roughly the same degree to the hydromechanical shear action of oxygen in the entire axial length of whole fluid shear chamber 3.That is, can prevent to take place when oxygen and pure water L from advancing the situation that the generation efficient of nano bubble reduces in fluid shear chamber 3.
As shown in Figure 1, carry out under the state among the pure water L that the substrate W of clean contained in impregnated in above-mentioned treatment trough 1, be supplied to the position relative, and remain the state that vertically erects with above-mentioned jet 5.Thus, the pure water L that comprises nano bubble that ejects from above-mentioned jet 50 is injected on the plate face of aforesaid substrate W.
In addition, between substrate W and above-mentioned jet 5, be provided with at interval, so that act on the plate face of substrate W with the pressure of regulation from the pure water L of jet 5 injections.In addition, act on whole of substrate W,, drive above-mentioned gas clipper 2 along the above-below direction and the Width of the plate face of substrate W by not shown driving mechanism in order to make the pure water L that sprays from jet 5.
As mentioned above since in force down, so nano bubble in the floating Swam, dwindles under the effect of external pressure in liquid, its surface charge concentrates and forms extremely strong electric field, the nano bubble activate that becomes thus.Thus, if spray the pure water L that comprises nano bubble, then can efficiently and reliably carry out clean to substrate W to substrate W.Especially, if treatment fluid is that pure water L, gas are oxygen, the pure water L that then comprises the nano bubble of oxygen can clean efficiently and remove the organic substance that is attached to substrate W.
As to above-mentioned gas clipper 2 gas supplied and treatment fluid, can be following combination: pure water and ozone, etching solution and oxygen or air, etching solution and nitrogen or carbon dioxide, stripper and oxygen, stripper and carbon dioxide, stripper and nitrogen, developer solution and oxygen, developer solution and nitrogen etc.
By the combination of pure water and ozone, only do not come cleaning base plate W by pure water, can also on substrate W, force to form oxide-film by the nano bubble of ozone, have the effect of the wetability that improves substrate.
Combination by etching solution and oxygen or air, the etching action that not only can have etching solution, can also be owing to the existence of the nano bubble of oxygen or air, the anion that utilization produces on the surface of nano bubble, can adsorb the cationic material that the etching action because of etching solution produces, and repel the anionic property material, thereby prevent that the anionic property material from adhering to substrate W once more.
And, because nano bubble has the character that is taken into metal ion etc., therefore can remove metal ion simultaneously.In addition, the nano bubble of the oxygen by activate can improve the reactivity of etching solution to substrate W, i.e. etching action.
Combination by etching solution and nitrogen or carbon dioxide, the anion that utilization produces on the surface of nano bubble, make nano bubble adsorb the cationic material that produces by etching action, and repel the anionic property material, thereby prevent that the anionic property material from adhering to substrate W once more.
No matter use which kind of gas, contain the etching solution of nano bubble by use, it is mobile that etching solution is produced, thereby improve the uniformity of etch processes.
Combination by stripper and oxygen, the effect of removing resist that not only has stripper and produced, can also pass through the effect of the nano bubble of oxygen, make the resist of peeling off from substrate W electronegative, thereby has the anti-adhewsive action again that the resist that prevents to peel off from substrate W adheres to substrate W, and the nano bubble of oxygen that can also be by activate improves the reactivity of stripper to substrate W, promptly peels off effect.
Combination by stripper and carbon dioxide, the effect of removing resist that not only has stripper and produced, can also prevent that the strong alkali solution that produces of stripper and water reaction from causing damage to the Wiring pattern of aluminium etc., has the effect of anti-strong basicityization by the nano bubble of carbon dioxide.
By the combination of stripper and nitrogen, the effect of removing resist that not only has stripper and produced, and, have the effect that prevents the early stage deterioration of stripper because the nano bubble of nitrogen makes oxygen be difficult to enter stripper.
By the combination of developer solution and oxygen, the development effect that not only has developer solution and produced can also improve the reactivity of developer solution by the nano bubble of oxygen, promptly to the development effect of substrate W.
By the combination of developer solution and nitrogen, the development effect that not only has developer solution and produced, and, have the effect that prevents the early stage deterioration of developer solution because the nano bubble of nitrogen makes oxygen be difficult to enter developer solution.
No matter use which kind of gas, contain the developer solution of nano bubble by use, the anion that can produce, the cationic material after making nano bubble absorption be developed by surface at nano bubble, and repel the anionic property material, thereby prevent that the anionic property material from adhering to substrate W once more.
The alkaline detergent, ammoniacal liquor or the potassium hydroxide aqueous solution that contain the nano bubble of oxygen, ozone or hydrogen by use, the anion that utilizes the nano bubble surface to be had, make nano bubble adsorb the cationic material of peeling off from substrate W, and repel the anionic property material, thereby prevent that the anionic property material from adhering to substrate W once more.
If clean the following fine pattern of 90nm with pure water, isopropyl alcohol (IPA), then can produce and clean insufficient or pattern collapse, but if use nitrogen, the pure water that contains the nano bubble of carbon dioxide cleans, then reduced the surface tension of this pure water, improve the interfacial activity effect, therefore can prevent to clean insufficient, pattern collapse.
In addition, come under the situation of treatment substrate W the ccontaining employed treatment fluid of combination that is somebody's turn to do in treatment trough 1 in combination with above-mentioned each gas and each treatment fluid.
In the above-described first embodiment, set by gas supply pump and liquid supply pump respectively to the fluid shear chamber gas supplied of gas clipper and the pressure of treatment fluid, but also can on gas supply pipe and feed tube for liquid, pressure-regulating valve be set, adjust the supply pressure of gas and treatment fluid by these pressure-regulating valves.
In addition, the gas clipper can be configured in and come treatment substrate in the treatment trough, also the above-mentioned gas clipper can be installed on the turning arm, this turning arm is arranged on the top of the rotating platform of spin processing unit, while described spin processing unit makes substrate rotation treatment substrate.And also treatment substrate like this: when making the substrate rotation, also make the turning arm rotation, thereby the above-mentioned gas clipper is moved laterally from the footpath direction central part of substrate, the plate face to substrate sprays the treatment fluid that contains nano bubble simultaneously.
Fig. 4 shows second execution mode of the present invention.In this embodiment, the substrate W that is made of the glass substrate of the employed rectangular shape of liquid crystal indicator is maintained on the rotating platform 22 of spin processing unit 21.This rotating platform 22 is housed in the cup 23, is driven by motor 25 rotations by main shaft 24.
Above-mentioned rotating platform 22 for example has 4 support arms 26 (only illustrating 2), supporting pin 27 below the leading section of each support arm 26 is provided with the bight that is used to support aforesaid substrate W and a pair of engagement pin 28 (only illustrating 1) that engages with the side in bight.
Above the substrate W that is held in above-mentioned rotating platform 22, dispose ultrasonic nozzle body 31.Supply with the treatment fluid that contains nano bubble to this ultrasonic nozzle body 31, described nano bubble is that to produce mechanism by the nano bubble shown in first execution mode be that gas clipper 2 produces.Be provided with not shown oscillating plate in the inside of ultrasonic nozzle body 31, this oscillating plate provides ultrasonic vibration to being supplied to inner treatment fluid.
Above-mentioned ultrasonic nozzle body 31 is installed in the front end of swing arm 32, and this swing arm 32 is above the substrate W that is held in rotating platform 22, and along continuous straight runs is shaken driving.Thus, can supply with the treatment fluid that sprays from above-mentioned ultrasonic nozzle body 31 equably to the whole plate face of aforesaid substrate W.
By the spin processing unit 21 of such formation, the treatment fluid that contains nano bubble is supplied to substrate W through ultrasonic nozzle body 31.Therefore, supply with treatment fluid from ultrasonic nozzle body 31 to substrate W, the nano bubble that is comprised in this treatment fluid plate face at substrate W under the effect of ultrasonic vibration is crushed.
In case bubble is crushed, owing to damaging by pressure, this produces air pocket (cavitation), and this air pocket can bring out shock wave.Thus, can significantly promote and the corresponding processing effect of the kind of treatment fluid substrate W.
Fig. 5 shows the 3rd execution mode of the present invention.This execution mode is the variation of second execution mode.The treatment fluid that contains the nano bubble that produces by gas clipper 2 is supplied to treatment fluid supply nozzle 35.This treatment fluid supply nozzle 35 is configured to supply with treatment fluid to the pivot of the plate face of the substrate W that is maintained at rotating platform 22.
On the other hand, to ultrasonic nozzle body 31 feed fluids that are installed on the swing arm 32, for example pure water.The pure water of supplying with to ultrasonic nozzle body 31 is applied in ultrasonic vibration and is supplied to the plate face of substrate W.
According to such formation, the treatment fluid of supplying with to the plate face of substrate W from treatment fluid supply nozzle 35 that contains nano bubble is accepted the effect of ultrasonic vibration that the pure water that sprays from ultrasonic nozzle body 31 is applied.
Thus, after supplying with treatment fluid to substrate W, pure water is applied ultrasonic vibration, thereby make that the nano bubble that treatment fluid contained is crushed, this crushes and can produce air pocket, and this air pocket can bring out shock wave.Thus, can significantly promote and the corresponding processing effect of the kind of treatment fluid substrate W.
Fig. 6 is the 4th execution mode of the present invention, and this execution mode has replaced spin processing unit 21 with horizontal transportation processing device 36, by horizontal carrying substrate W one side, horizontal transportation processing device 36 one side treatment substrate.Horizontal transportation processing device 36 has a plurality of carrying rollers 37 that dispose with predetermined distance in the horizontal direction for to direction of arrow carrying substrate W.
On the substrate W of carrying, dispose along with the elongated ultrasonic vibration applying mechanism of the Width of the carrying direction quadrature of substrate W, i.e. ultrasonic nozzle body 31A.Supply with the treatment fluid that contains the nano bubble that produces by gas clipper 2 to this ultrasonic nozzle body 31A.
Thus, supply with the treatment fluid that contains the nano bubble that has been applied in ultrasonic vibration to the upper surface of the substrate W of level carrying across whole Width total length, in case the nano bubble in the treatment fluid that the upper surface of substrate W is supplied with is crushed at the upper surface of substrate W, this crushes and can produce air pocket, and this air pocket can bring out shock wave.Thus, can significantly promote and the corresponding processing effect of the kind of treatment fluid substrate W.
Fig. 7 shows the 5th execution mode of the present invention, by horizontal transportation processing device 36, on one side carrying substrate W one side treatment substrate W.This execution mode is the variation of the 4th execution mode shown in Figure 6, supplies with the liquid that has been applied in ultrasonic vibration, i.e. pure water from ultrasonic nozzle body 31A to substrate W plate face.
Dispose spray line (shower pipe) 41 at the upstream side of the above-mentioned ultrasonic nozzle body 31A of the carrying direction of substrate W along the Width of substrate W as the treatment fluid supply nozzle.Supply with the treatment fluid that contains the nano bubble that is produced by gas clipper 2 to spray line 41, this treatment fluid is supplied to the upper surface of aforesaid substrate W.
According to such formation, if supply with the treatment fluid that contains nano bubble to the plate face of substrate W by spray line 41, the then effect of the ultrasonic vibration that applies of this treatment fluid pure water of accepting that ultrasonic nozzle body 31A is supplied with, nano bubble is crushed.
In case nano bubble is crushed, this crushes and can cause air pocket, and this air pocket can bring out shock wave.Thus, can significantly promote and the corresponding processing effect of the kind of treatment fluid substrate W.
Fig. 8 shows the 6th execution mode of the present invention, by horizontal transportation processing device 36, on one side carrying substrate W one side treatment substrate W.In this embodiment, the upper surface with the substrate W that is handled upside down the carrying of roller 37 levels relatively is equipped with a plurality of spray lines 41.
Each spray line 41 has the length across the Width total length of substrate W, separates with predetermined distance on the carrying direction of substrate W.On the other hand, dispose ultrasonic nozzle body 31A with above-mentioned spray line 41 opposed positions below substrate W, this ultrasonic nozzle body 31A applies ultrasonic vibration to the pure water as liquid, and below aforesaid substrate this liquid of injection.
According to such formation, supply with treatment fluid from a plurality of spray line 41 to the upper surface of substrate W, be applied in the pure water of ultrasonic vibration to following supply from ultrasonic nozzle body 31A.Thus, the nano bubble that is contained in the treatment fluid that the upper surface of substrate W is supplied with is subjected to the effect of ultrasonic vibration that the pure water below being supplied to is applied, the nano bubble that crushes in the treatment fluid to be contained by this ultrasonic vibration.
In case nano bubble is crushed, this crushes and can cause air pocket, and this air pocket can bring out shock wave.Thus, can significantly promote and the corresponding processing effect of the kind of treatment fluid substrate W.
And, the treatment fluid that contains nano bubble is supplied to the upper surface of substrate W, the nano bubble that contains in order to crush in the treatment fluid, and supply has been applied in the pure water of ultrasonic vibration below substrate W, thus, can prevent to be diluted by pure water, cause this treatment fluid that the treatment effect of the upper surface of substrate W is reduced to the treatment fluid that the upper surface of substrate W is supplied with.
Fig. 9 shows the 7th execution mode of the present invention, by horizontal transportation processing device 36, on one side carrying substrate W, treatment substrate W on one side.In this embodiment, by the force (forcing) pump 42 as pressing mechanism, the treatment fluid that will contain the nano bubble that is generated by gas clipper 2 is forced into for example high pressure more than the 0.7MPa.Then, the treatment fluid that is pressurized to high pressure is supplied to high pressure spray line 43 as feed mechanism, this high pressure spray line 43 be configured in the level carrying substrate W above.
The treatment fluid that contains nano bubble is supplied to the upper surface of substrate W from high pressure spray line 43 with high pressure conditions.Thus, when treatment fluid conflicts with high pressure conditions with the plate face of substrate W, promptly when substrate is supplied with treatment fluid, the nano bubble that crushes in the treatment fluid to be contained by this pressure.
In case nano bubble is crushed, this crushes and can cause air pocket, and this air pocket can bring out shock wave.Thus, can significantly promote and the corresponding processing effect of the kind of treatment fluid substrate W.
In addition, in the 7th execution mode, listed by horizontal transportation processing device 36 horizontal carrying substrate W on one side, on one side the example of treatment substrate W, but for one side rotary plate W on one side the situation of treatment substrate also can be suitable for.
Figure 10 shows the 8th execution mode of the present invention, by horizontal transportation processing device 36, on one side carrying substrate W, treatment substrate W on one side.This execution mode is the variation of the 7th execution mode shown in Figure 9, with predetermined distance, dispose a plurality of spray line 44 along the carrying direction of substrate W and along the Width of substrate W, this a plurality of spray line 44 is to supply with the treatment fluid that contains the nano bubble that is generated by gas clipper 2 in the upper surface side of substrate W.In addition, spray line 44 also can be one.
In addition, on the upper surface side of substrate W and carrying direction, be positioned at the downstream side of above-mentioned spray line 44 at substrate W, dispose high pressure spray line 45 along the Width of substrate W as liquid jet mechanism, it is pure water that this high pressure spray line 45 is supplied with as other liquid different with the treatment fluid that contains nano bubble to aforesaid substrate W, and the force (forcing) pump 42a that these other liquid are used as pressing mechanism is forced into the above high pressure of 0.7MPa.
According to such formation, if supply with treatment fluid to the upper surface of substrate W from a plurality of spray line 44, then the nano bubble that is contained in this treatment fluid is destroyed under the effect of the pressure of the pure water that the upper surface of substrate W is supplied with from high pressure spray line 45 with high pressure, and this high pressure spray line 45 is configured in the downstream side of the spray line 44 on the carrying direction of substrate W.
In case nano bubble is crushed, this crushes and can cause air pocket, and this air pocket can bring out shock wave.Thus, can significantly promote and the corresponding processing effect of the kind of treatment fluid substrate W.
In each execution mode as Fig. 4～shown in Figure 10, as treatment fluid and produce the combination of the gas of nano bubble can oxygen or ozone and pure water, nitrogen or carbon dioxide and etching solution, air or oxygen or ozone and stripper, the combination of nitrogen or carbon dioxide and stripper etc.
At the gas that contains nano bubble is that oxygen or ozone, treatment fluid are under the situation of pure water, by the shock wave of air pocket, can promote from the organic decomposition of the plate face of substrate W, the disengaging of particulate.
At the gas that contains nano bubble is that nitrogen or carbon dioxide, treatment fluid are under the situation of etching solution, if nano bubble is crushed and produces air pocket and then bring out shock wave, then can remove the raffinate that etching produces by this shock wave.Simultaneously, because the gas of nano bubble dissolves in treatment fluid, this nitrogen or carbon dioxide have the effect of the surface oxidation that prevents substrate W.
At the gas that contains nano bubble is that air or oxygen or ozone, treatment fluid are under the situation of stripper, utilize the anion on the surface of nano bubble, make nano bubble adsorb the cationic material of being stripped from, and repel the anionic property material, thereby prevent that the anionic property material from adhering to substrate W once more.
And, because nano bubble has the character that is taken into metal ion (aluminium system, molybdenum system, tungsten system, copper system) etc., therefore, can remove metal ion simultaneously.
At the gas that contains nano bubble is that nitrogen or carbon-source gas, treatment fluid are under the situation of stripper, and the air pocket that produces because of crushing of nano bubble brings out the raffinate that shock wave can be removed stripper.In addition, be under the situation of carbon dioxide at gas, by the deterioration that can prevent liquid that crushes of nano bubble.In addition, with the stripper on the surface of pure water rinsing substrate W the time, contained carbon dioxide can prevent stripper and pure water reaction and become strong basicity in the stripper.
Industrial applicibility
According to the present invention, make gas and treatment fluid rotate and be supplied to the fluid shear chamber of gas clipper, lead to Cross the poor of rotary speed between matrix and the treatment fluid, thereby utilize hydrodynamics to come shear gas to produce Nano bubble. Therefore, owing to can before gas dissolves in treatment fluid, produce efficiently nano bubble, Therefore can utilize the treatment fluid that contains nano bubble to come efficiently cleaning base plate.
Claims (8)
1. the processing unit of a substrate comes treatment substrate by treatment fluid, it is characterized in that, possesses:
Nano bubble produces mechanism, is used to produce nano bubble, and this nano bubble is mixed with above-mentioned treatment fluid;
The treatment fluid feed mechanism is supplied with the above-mentioned treatment fluid that contains this nano bubble generation nano bubble that mechanism produced to the plate face of aforesaid substrate; And
Pressing mechanism pressurizes to the nano bubble that is contained in the treatment fluid that the plate face of aforesaid substrate is supplied with by this treatment fluid feed mechanism, and crushes described nano bubble at the plate face of aforesaid substrate.
2. the processing unit of substrate as claimed in claim 1 is characterized in that,
Above-mentioned nano bubble produces mechanism and comprises:
Be formed with the gas clipper of fluid shear chamber in inside;
Gas supply part is arranged on the axial end of above-mentioned gas clipper, makes the above-mentioned gas rotation and above-mentioned gas is supplied to above-mentioned fluid shear chamber; And
The liquid supply unit, be arranged on the outer peripheral face of an end of above-mentioned gas clipper, make the rotation of above-mentioned treatment fluid and above-mentioned treatment fluid is supplied to above-mentioned fluid shear chamber, the rotary speed by above-mentioned treatment fluid and above-mentioned gas poor produces above-mentioned nano bubble by above-mentioned gas.
3. the processing unit of substrate as claimed in claim 1, it is characterized in that, above-mentioned pressing mechanism is a force (forcing) pump, this force (forcing) pump pressurizes to the treatment fluid that produces mechanism from above-mentioned nano bubble and supply with to above-mentioned treatment fluid feed mechanism, thereby makes that the nano bubble that is contained in this treatment fluid is crushed.
4. the processing unit of substrate as claimed in claim 1 is characterized in that,
Come level carrying aforesaid substrate by horizontal carrying mechanism,
Above-mentioned pressing mechanism is a force (forcing) pump, and the liquid of other that this compression pump will be different with above-mentioned treatment fluid is forced into the pressure that can crush above-mentioned nano bubble,
On the carrying direction plate face, of aforesaid substrate, be positioned at above-mentioned treatment fluid feed mechanism and supply with the position of downstream side at the position of above-mentioned treatment fluid,, spray and supply with the liquid that was pressurizeed by above-mentioned force (forcing) pump by liquid jet mechanism at aforesaid substrate.
5. the processing method of a substrate is come treatment substrate by treatment fluid, it is characterized in that, comprising:
Produce nano bubble, and the operation that this nano bubble is mixed with above-mentioned treatment fluid;
Supply with the operation of the above-mentioned treatment fluid that contains nano bubble to the plate face of aforesaid substrate; And
The nano bubble that is contained in the treatment fluid that the plate face of subtend aforesaid substrate is supplied with pressurizes, and crushes the operation of described nano bubble at the plate face of aforesaid substrate.
6. the processing method of substrate as claimed in claim 5 is characterized in that, when above-mentioned treatment fluid is supplied to aforesaid substrate, crushes the nano bubble that is contained in the above-mentioned treatment fluid.
7. the processing method of substrate as claimed in claim 5 is characterized in that, after above-mentioned treatment fluid is supplied to aforesaid substrate, crushes the nano bubble that is contained in the above-mentioned treatment fluid.
8. the processing method of a substrate is come treatment substrate by treatment fluid, it is characterized in that, handles aforesaid substrate by the described processing unit of claim 1.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007006061 | 2007-01-15 | ||
| JP006061/2007 | 2007-01-15 | ||
| JP226126/2007 | 2007-08-31 | ||
| JP2007226126A JP5252861B2 (en) | 2007-01-15 | 2007-08-31 | Substrate processing equipment |
| PCT/JP2008/050264 WO2008087903A1 (en) | 2007-01-15 | 2008-01-11 | Apparatus and method for processing substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101578688A true CN101578688A (en) | 2009-11-11 |
| CN101578688B CN101578688B (en) | 2011-04-13 |
Family
ID=39757617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008800019551A Active CN101578688B (en) | 2007-01-15 | 2008-01-11 | Apparatus and method for processing substrate |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5252861B2 (en) |
| CN (1) | CN101578688B (en) |
| TW (1) | TWI415694B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646616A (en) * | 2011-02-21 | 2012-08-22 | 芝浦机械电子株式会社 | Substrate cleaning apparatus, substrate cleaning method, display manufacturing apparatus and display manufacturing method |
| CN104898324A (en) * | 2014-03-07 | 2015-09-09 | 芝浦机械电子株式会社 | Liquid collection processing device, liquid collection processing method, substrate processing device and substrate processing method |
| CN107952741A (en) * | 2017-11-30 | 2018-04-24 | 江苏维仪工业科技有限公司 | A kind of application method of micro-nano generator in plating is washed |
| CN109772187A (en) * | 2017-11-14 | 2019-05-21 | 亚智科技股份有限公司 | Gas-liquid mixed mechanism, process equipment and gas-liquid mixing processes |
| CN110045522A (en) * | 2019-03-22 | 2019-07-23 | 湖南飞优特电子科技有限公司 | A kind of undesirable control device of LCD processing procedure PI dust stain |
| CN110153057A (en) * | 2018-02-14 | 2019-08-23 | 特铨股份有限公司 | Substrate cleaning apparatus and substrate-cleaning method |
| CN110473773A (en) * | 2019-08-22 | 2019-11-19 | 北京北方华创微电子装备有限公司 | Method for cleaning wafer and wafer cleaning equipment |
| CN113522070A (en) * | 2020-03-31 | 2021-10-22 | 显示器生产服务株式会社 | Carbon dioxide dissolving module and substrate processing apparatus including the same |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010153475A (en) * | 2008-12-24 | 2010-07-08 | Sokudo Co Ltd | Substrate treatment apparatus and substrate treatment method |
| JP5666086B2 (en) | 2008-12-25 | 2015-02-12 | ジルトロニック アクチエンゲゼルシャフトＳｉｌｔｒｏｎｉｃ ＡＧ | Silicon wafer cleaning equipment |
| JP2010221069A (en) * | 2009-03-19 | 2010-10-07 | Kanto Auto Works Ltd | Washing method of coating machine and coating apparatus |
| JP5656245B2 (en) * | 2010-06-17 | 2015-01-21 | 芝浦メカトロニクス株式会社 | Cleaning method and cleaning device |
| JP2013191779A (en) * | 2012-03-14 | 2013-09-26 | Toshiba Corp | Processor and processing method |
| KR101519630B1 (en) * | 2014-03-31 | 2015-05-14 | (주) 에스엠씨 | An etching system |
| JPWO2019156180A1 (en) * | 2018-02-09 | 2021-04-30 | 国立大学法人 東京大学 | Dissolution system for poorly water-soluble organic compounds, dissolution method for poorly water-soluble organic compounds, and odor detection system |
| JP7265467B2 (en) * | 2019-12-17 | 2023-04-26 | 株式会社荏原製作所 | Resist removal system and resist removal method |
| JP7265466B2 (en) * | 2019-12-17 | 2023-04-26 | 株式会社荏原製作所 | Resist removal system and resist removal method |
| KR20230043947A (en) * | 2020-10-23 | 2023-03-31 | 가부시키가이샤 사무코 | Cleaning method of piping of single-wafer type wafer cleaning equipment |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6382601B1 (en) * | 1997-12-30 | 2002-05-07 | Hirofumi Ohnari | Swirling fine-bubble generator |
| JP3397154B2 (en) * | 1997-12-30 | 2003-04-14 | 博文 大成 | Revolving microbubble generator |
| JP2001269631A (en) * | 2000-03-27 | 2001-10-02 | Dainippon Screen Mfg Co Ltd | Substrate cleaning device |
| JP2004121962A (en) * | 2002-10-01 | 2004-04-22 | National Institute Of Advanced Industrial & Technology | Method and apparatus for using nanometer-bubble |
| JP2006147617A (en) * | 2004-11-16 | 2006-06-08 | Dainippon Screen Mfg Co Ltd | Substrate processor and particle removing method |
| JP2006179765A (en) * | 2004-12-24 | 2006-07-06 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus and particle removing method |
| US7392814B2 (en) * | 2004-12-24 | 2008-07-01 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and method |
-
2007
- 2007-08-31 JP JP2007226126A patent/JP5252861B2/en active Active
-
2008
- 2008-01-11 TW TW97101146A patent/TWI415694B/en active
- 2008-01-11 CN CN2008800019551A patent/CN101578688B/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102646616A (en) * | 2011-02-21 | 2012-08-22 | 芝浦机械电子株式会社 | Substrate cleaning apparatus, substrate cleaning method, display manufacturing apparatus and display manufacturing method |
| CN104898324A (en) * | 2014-03-07 | 2015-09-09 | 芝浦机械电子株式会社 | Liquid collection processing device, liquid collection processing method, substrate processing device and substrate processing method |
| CN104898324B (en) * | 2014-03-07 | 2017-11-17 | 芝浦机械电子株式会社 | Connect liquid processing device, connect liquid processing method, substrate board treatment and substrate processing method using same |
| CN109772187A (en) * | 2017-11-14 | 2019-05-21 | 亚智科技股份有限公司 | Gas-liquid mixed mechanism, process equipment and gas-liquid mixing processes |
| CN107952741A (en) * | 2017-11-30 | 2018-04-24 | 江苏维仪工业科技有限公司 | A kind of application method of micro-nano generator in plating is washed |
| CN110153057A (en) * | 2018-02-14 | 2019-08-23 | 特铨股份有限公司 | Substrate cleaning apparatus and substrate-cleaning method |
| CN110045522A (en) * | 2019-03-22 | 2019-07-23 | 湖南飞优特电子科技有限公司 | A kind of undesirable control device of LCD processing procedure PI dust stain |
| CN110473773A (en) * | 2019-08-22 | 2019-11-19 | 北京北方华创微电子装备有限公司 | Method for cleaning wafer and wafer cleaning equipment |
| CN113522070A (en) * | 2020-03-31 | 2021-10-22 | 显示器生产服务株式会社 | Carbon dioxide dissolving module and substrate processing apparatus including the same |
| CN113522070B (en) * | 2020-03-31 | 2023-08-08 | 显示器生产服务株式会社 | Carbon dioxide dissolving module and substrate processing apparatus including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI415694B (en) | 2013-11-21 |
| JP2008198974A (en) | 2008-08-28 |
| TW200911395A (en) | 2009-03-16 |
| CN101578688B (en) | 2011-04-13 |
| JP5252861B2 (en) | 2013-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101578688B (en) | Apparatus and method for processing substrate | |
| US10632506B2 (en) | Cleaning method and cleaning device using micro/nano-bubbles | |
| KR101385412B1 (en) | Apparatus and method for generating gas-liquid mixed fluid, and processing apparatus and processing method | |
| JP2005296312A (en) | Washing method | |
| JP2010153475A (en) | Substrate treatment apparatus and substrate treatment method | |
| CN102284447B (en) | Cleaning method and cleaning device | |
| JP2006223995A (en) | Washing method and washing device | |
| CN101154566A (en) | Substrate processing device and method | |
| JP2010269214A (en) | Nozzle cleaning apparatus | |
| JP5153305B2 (en) | Resist film peeling apparatus and peeling method | |
| KR20030032029A (en) | High-pressure treatment apparatus and high-pressure treatment method | |
| JP2007222754A (en) | Spin washing device | |
| JP2007194351A (en) | Method and device for processing substrate | |
| JP2004096055A (en) | Method and apparatus for treating substrate | |
| JP2009094521A (en) | Chemical liquid supply device | |
| JP5130127B2 (en) | Substrate processing apparatus and processing method | |
| JP3638511B2 (en) | Substrate cleaning device | |
| JP2009246042A (en) | Production apparatus and production method of process liquid, processing equipment and processing method of substrate | |
| JP2001269557A (en) | Jet joining device | |
| TWI308358B (en) | Nozzle equipment and substrate treatment equipment | |
| KR101035051B1 (en) | Substrate Cleaning Apparatus Using Bubble And Method Using The Same | |
| WO2012090815A1 (en) | Resist removal device and resist removal method | |
| JP2018015747A (en) | Microbubble washing device | |
| JP2012000580A (en) | Bubble-containing liquid generating device and treatment device | |
| KR20050038761A (en) | Substrate cleaning apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |