JP2009246042A - Production apparatus and production method of process liquid, processing equipment and processing method of substrate - Google Patents

Production apparatus and production method of process liquid, processing equipment and processing method of substrate Download PDF

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JP2009246042A
JP2009246042A JP2008088725A JP2008088725A JP2009246042A JP 2009246042 A JP2009246042 A JP 2009246042A JP 2008088725 A JP2008088725 A JP 2008088725A JP 2008088725 A JP2008088725 A JP 2008088725A JP 2009246042 A JP2009246042 A JP 2009246042A
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processing
liquid
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nanobubbles
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JP2009246042A5 (en
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Harumichi Hirose
治道 廣瀬
Masayasu Abe
正泰 安部
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Shibaura Mechatronics Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a production apparatus of processing liquid which imparts an oxidizing action to nano bubbles by charging the nano bubbles with positive charges. <P>SOLUTION: A production apparatus of processing liquid for processing a substrate comprises a nano bubble generator 18 for producing processing liquid containing nano bubbles by mixing liquid and gas, an ionizer 22 for charging nano bubbles generated from the nano bubble generator with positive charges, and a liquid supply tank 23 for supplying acid fluid. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

この発明はたとえば半導体ウエハや液晶ディスプレイのガラス基板の回路パターンが形成されたデバイス面を処理するための処理液の製造装置、製造方法及び基板の処理装置、処理方法に関する。   The present invention relates to a processing liquid manufacturing apparatus, a manufacturing method, a substrate processing apparatus, and a processing method for processing a device surface on which a circuit pattern of a glass substrate of a semiconductor wafer or a liquid crystal display is formed.

たとえば、液晶表示装置や半導体装置の製造工程においては、半導体ウエハやガラス基板などの基板の回路パターンが形成された、被処理面としてのデバイス面に対して種々の処理を行なうことが要求される。   For example, in a manufacturing process of a liquid crystal display device or a semiconductor device, it is required to perform various processes on a device surface as a processing surface on which a circuit pattern of a substrate such as a semiconductor wafer or a glass substrate is formed. .

基板に対して処理を行なう場合、基板に単に処理液を供給するだけでは十分な処理効果が得られないことがある。そこで、特許文献１では処理液にマイクロバブルを発生させ、このマイクロバブルを圧壊させることで、処理効果を向上させるということが行なわれている。   When processing a substrate, a sufficient processing effect may not be obtained simply by supplying a processing solution to the substrate. Therefore, in Patent Document 1, a treatment effect is improved by generating microbubbles in the treatment liquid and crushing the microbubbles.

たとえば、液晶表示装置や半導体装置の製造工程においては、半導体ウエハやガラス基板などの基板の回路パターンが形成された、被処理面としてのデバイス面に、たとえばライトエッチング、酸化膜の生成或いはメタル汚染の除去など、酸化作用を利用した処理が要求されることがある。
特開２００６−３１０４５６ For example, in a manufacturing process of a liquid crystal display device or a semiconductor device, for example, light etching, oxide film generation or metal contamination on a device surface as a processing surface on which a circuit pattern of a substrate such as a semiconductor wafer or a glass substrate is formed. In some cases, a treatment using an oxidizing action such as removal of the water is required.
JP 2006-310456 A

特許文献１に示されているように、処理液にマイクロバブルを発生させ、マイクロバブルを含む処理液によって基板を処理するようにすれば、基板の処理効果を向上させることが可能となる。しかしながら、特許文献１のように純水と窒素ガスとを混合ポンプで混合してマイクロバブルを作るだけであると、そのマクロバブルはマイナスの電荷が帯電することが知られている。マイナスの電荷が帯電したマクロバブルは通常、アルカリ性の性質を備えている。   As shown in Patent Document 1, if microbubbles are generated in the processing liquid and the substrate is processed with the processing liquid containing microbubbles, the processing effect of the substrate can be improved. However, it is known that, if pure water and nitrogen gas are simply mixed with a mixing pump to form microbubbles as in Patent Document 1, the macrobubbles are negatively charged. Macro bubbles charged with a negative charge usually have an alkaline property.

そのため、液晶表示装置や半導体装置の製造工程において、半導体ウエハやガラス基板などの基板の回路パターンが形成された、被処理面としてのデバイス面に、たとえばライトエッチング、酸化膜の生成或いはメタル汚染の除去などの酸化作用を利用した処理を行いたい場合、従来の方法ではプラスの電荷を帯電したナノバブル、つまり酸性のナノバブルを作ることができないということがあった。   Therefore, in the manufacturing process of a liquid crystal display device or a semiconductor device, for example, light etching, generation of an oxide film, or metal contamination may occur on a device surface as a processing surface on which a circuit pattern of a substrate such as a semiconductor wafer or a glass substrate is formed. In the case where it is desired to perform a treatment utilizing an oxidizing action such as removal, there is a case where nanobubbles charged with a positive charge, that is, acidic nanobubbles cannot be produced by the conventional method.

この発明は、プラスの電荷を帯電して酸性の性質を持ったナノバブルを含む処理液を製造することができるようにした処理液の製造装置、製造方法及び基板の処理装置、処理方法を提供することにある。   The present invention provides a processing liquid manufacturing apparatus, a manufacturing method, a substrate processing apparatus, and a processing method capable of manufacturing a processing liquid containing nanobubbles having an acidic property by charging a positive charge. There is.

この発明は、基板を処理する処理液を製造する処理液の製造装置であって、
液体と気体を混合してナノバブルを含む上記処理液を製造するナノバブル発生器と、
このナノバブル発生器で発生するナノバブルにプラスの電荷を帯電させるプラス電荷付与手段と
を具備したことを特徴とする処理液の製造装置にある。 The present invention is a processing liquid manufacturing apparatus for manufacturing a processing liquid for processing a substrate,
A nanobubble generator for producing the treatment liquid containing nanobubbles by mixing liquid and gas;
An apparatus for producing a treatment liquid, comprising: a plus charge imparting means for charging plus charges to the nanobubbles generated by the nanobubble generator.

上記プラス電荷付与手段は、上記ナノバブル発生器に供給される上記気体にプラスの電荷を付与するイオナイザであることが好ましい。   The positive charge imparting means is preferably an ionizer that imparts a positive charge to the gas supplied to the nanobubble generator.

上記プラス電荷付与手段は、上記ナノバブル発生器に酸性の液体を供給することが好ましい。   The positive charge imparting means preferably supplies an acidic liquid to the nanobubble generator.

この発明は、基板を処理する処理液を製造する処理液の製造方法であって、
液体と気体を混合してナノバブルを含む上記処理液を製造する工程と、
上記処理液に含まれるナノバブルにプラスの電荷を帯電させる工程と
を具備したことを特徴とする処理液の製造方法にある。 The present invention is a process liquid manufacturing method for manufacturing a process liquid for processing a substrate,
A step of producing a treatment liquid containing nanobubbles by mixing a liquid and a gas;
And a step of charging the nanobubbles contained in the treatment liquid with a positive charge.

この発明は、基板を処理液によって処理する基板の処理装置であって、
処理槽と、
この処理槽内に上記基板を保持する保持手段と、
この保持手段に保持された基板の被処理面にナノバブルを含む処理液を供給する処理液の製造装置を具備し、
上記製造装置は請求項１に記載された構成であることを特徴とする基板の処理装置にある。 The present invention is a substrate processing apparatus for processing a substrate with a processing liquid,
A treatment tank;
Holding means for holding the substrate in the processing tank;
A processing liquid manufacturing apparatus for supplying a processing liquid containing nanobubbles to the surface to be processed of the substrate held by the holding means,
The manufacturing apparatus is a substrate processing apparatus having the structure described in claim 1.

この発明は、基板を処理液によって処理する基板の処理方法であって、
処理槽内に基板を保持する工程と、
保持された基板の被処理面にナノバブルを含む処理液を供給する工程を具備し、
上記処理液は請求項４に記載された方法によって製造されることを特徴とする基板の処理方法にある。 The present invention is a substrate processing method of processing a substrate with a processing liquid,
A step of holding the substrate in the treatment tank;
Comprising the step of supplying a processing liquid containing nanobubbles to the surface to be processed of the held substrate;
The processing liquid is manufactured by the method described in claim 4, and is in a substrate processing method.

この発明によれば、液体と気体を混合して作られる処理液に含まれるナノバブルにプラスの電荷を帯電させることで、そのナノバブルに酸性の性質を持たせることができるから、その酸性の性質を利用して基板を処理することが可能となる。   According to the present invention, since the nanobubbles contained in the treatment liquid produced by mixing the liquid and the gas are charged with a positive charge, the nanobubbles can have an acidic property. It is possible to process the substrate by using it.

以下、この発明の一実施の形態を図面を参照しながら説明する。
図１に示すこの発明の処理装置は処理槽１を備えている。この処理槽１内には載置テーブル２が設けられ、この載置テーブル２は処理槽１の下方に設けられた回転駆動源３によって回転駆動されるようになっている。回転駆動源３の駆動軸４は処理槽１の底部に設けられたシール性を有するラジアル軸受５によって回転可能支持されている。 An embodiment of the present invention will be described below with reference to the drawings.
The processing apparatus of the present invention shown in FIG. A mounting table 2 is provided in the processing tank 1, and the mounting table 2 is rotationally driven by a rotation drive source 3 provided below the processing tank 1. The drive shaft 4 of the rotational drive source 3 is rotatably supported by a radial bearing 5 having a sealing property provided at the bottom of the processing tank 1.

上記載置テーブル２の上面には半導体ウエハやガラス基板などの基板Ｗが図示しない回路パターンが形成された被処理面としてのデバイス面を上に向けてして供給されて保持される。   On the upper surface of the mounting table 2, a substrate W such as a semiconductor wafer or a glass substrate is supplied and held with a device surface as a processing surface on which a circuit pattern (not shown) is formed facing upward.

上記処理槽１の上部には上記載置テーブル２に保持された基板Ｗのデバイス面に向けて処理液Ｌを供給する供給ノズル７が設けられている。この供給ノズル７はアーム８の先端に設けられている。このアーム８は回転軸９に水平な状態で取付けられている。この回転軸９は軸線を垂直にした状態で回転駆動源１１の駆動軸１２に連結されている。   A supply nozzle 7 for supplying the processing liquid L toward the device surface of the substrate W held on the mounting table 2 is provided at the upper part of the processing tank 1. The supply nozzle 7 is provided at the tip of the arm 8. The arm 8 is attached to the rotating shaft 9 in a horizontal state. The rotary shaft 9 is connected to the drive shaft 12 of the rotary drive source 11 with the axis line vertical.

それによって、上記回転駆動源１１が作動して上記回転軸９が回転駆動されれば、上記アーム８の先端に設けられた供給ノズル７は上記基板の上方で基板Ｗを横切る方向に往復動するようになっている。   Accordingly, when the rotational drive source 11 is operated and the rotational shaft 9 is rotationally driven, the supply nozzle 7 provided at the tip of the arm 8 reciprocates in the direction across the substrate W above the substrate. It is like that.

上記供給ノズル７には上記処理液Ｌが供給される。すなわち、供給ノズル７には可撓性の給液管１３の一端が接続されている。この給液管１３の他端は処理液Ｌが貯えられた貯液槽１４に接続されている。給液管１３の中途部には供給ポンプ１５とフィルタ１６が設けられている。それによって、上記供給ポンプ１５が作動すれば、上記貯液槽１４に貯えられた処理液Ｌは上記供給ノズル７に供給され、この供給ノズル７から基板Ｗに向けて噴射されようになっている。   The treatment liquid L is supplied to the supply nozzle 7. That is, one end of a flexible liquid supply pipe 13 is connected to the supply nozzle 7. The other end of the liquid supply pipe 13 is connected to a liquid storage tank 14 in which the processing liquid L is stored. A supply pump 15 and a filter 16 are provided in the middle of the liquid supply pipe 13. Accordingly, when the supply pump 15 is operated, the processing liquid L stored in the liquid storage tank 14 is supplied to the supply nozzle 7 and is ejected from the supply nozzle 7 toward the substrate W. .

上記貯液槽１４にはナノバブル発生器１８からナノバブルを含む上記処理液Ｌが供給されるようになっている。上記ナノバブル発生器１８には気体供給ポンプ１９と液体供給ポンプ２１がそれぞれ配管接続されている。   The liquid storage tank 14 is supplied with the treatment liquid L containing nanobubbles from a nanobubble generator 18. A gas supply pump 19 and a liquid supply pump 21 are connected to the nanobubble generator 18 by piping.

上記気体供給ポンプ１９は上記ナノバブル発生器１８に窒素ガスや二酸化炭素ガスなどの気体を所定の圧力で供給し、上記液体供給ポンプ２１は上記ナノバブル発生器１８に液体を供給する。   The gas supply pump 19 supplies a gas such as nitrogen gas or carbon dioxide gas to the nanobubble generator 18 at a predetermined pressure, and the liquid supply pump 21 supplies a liquid to the nanobubble generator 18.

上記気体供給ポンプ１９の吐出側にはイオナイザ２２が設けられ、この気体供給ポンプ１９から吐出された気体には上記イオナイザ２２によってプラスの電荷が付与される。上記液体供給ポンプ２１の吸引側は酸性流体供給手段としての給液タンク２３に接続されている。給液タンク２３には液体として塩酸や硫酸などのペーハー（ｐＨ）値が４以下の酸性液体が収容されている。   An ionizer 22 is provided on the discharge side of the gas supply pump 19, and a positive charge is imparted to the gas discharged from the gas supply pump 19 by the ionizer 22. The suction side of the liquid supply pump 21 is connected to a liquid supply tank 23 as acidic fluid supply means. The liquid supply tank 23 stores an acidic liquid having a pH (pH) value of 4 or less, such as hydrochloric acid or sulfuric acid.

上記ナノバブル発生器１８に供給された気体は旋回流となり、上記酸性液体は気体よりも旋回速度の速い旋回流となって気体の周囲に沿って流れる。それによって、気体が酸性液体によって剪断されることで微細径のバブル、つまりナノバブルが発生し、そのナノバブルが酸性液体に混入して処理液Ｌとなり、上記貯液槽１４に貯えられる。つまり、処理液Ｌに含まれるナノバブルはイオナイザ２２によってプラスの電荷が帯電させられ、しかも処理液Ｌが酸性液体であることによって酸性となるから、これらのことにより酸性の性質を備えることになる。   The gas supplied to the nanobubble generator 18 becomes a swirl flow, and the acidic liquid becomes a swirl flow having a swirl speed faster than that of the gas and flows around the gas. As a result, when the gas is sheared by the acidic liquid, fine-sized bubbles, that is, nanobubbles, are generated, and the nanobubbles are mixed into the acidic liquid to become the treatment liquid L, which is stored in the liquid storage tank 14. In other words, the nanobubbles contained in the treatment liquid L are charged with a positive charge by the ionizer 22 and become acidic when the treatment liquid L is an acidic liquid. Therefore, the nanobubbles have an acidic property.

すなわち、図２は処理液Ｌに含まれるナノバブルのｐＨ値と、ナノバブルのゼータ電位との関係を測定した図であって、この図から分かるようにナノバブルのｐＨが４以下であると、ナノバブルのゼータ電位がプラスになることが確認されている。つまり、処理液ＬにｐＨ値が４以下の酸性液体を用いれば、ナノバブル発生器１８によって作られた処理液Ｌに含まれるナノバブルにプラスの電荷を帯電してそのナノバブルに酸性の性質を持たせることができる。   That is, FIG. 2 is a diagram in which the relationship between the pH value of the nanobubbles contained in the treatment liquid L and the zeta potential of the nanobubbles is measured. As can be seen from this figure, when the pH of the nanobubbles is 4 or less, It has been confirmed that the zeta potential is positive. That is, if an acidic liquid having a pH value of 4 or less is used for the treatment liquid L, the nanobubbles contained in the treatment liquid L produced by the nanobubble generator 18 are charged with a positive charge, and the nanobubbles have an acidic property. be able to.

そこで、この実施の形態では、ナノバブルにイオナイザ２２によってプラスの電位を付与したり、処理液ＬにｐＨ値が４以下の酸性液体を用いることで、ナノバブル発生器１８によって作られた処理液Ｌに含まれるナノバブルにプラスの電荷を帯電させることで、酸性の性質を持たせるようにしている。   Therefore, in this embodiment, by applying a positive potential to the nanobubbles by the ionizer 22 or using an acidic liquid having a pH value of 4 or less as the treatment liquid L, the treatment liquid L produced by the nanobubble generator 18 is added to the treatment liquid L. By charging the contained nanobubbles with a positive charge, it has an acidic property.

このようにしてナノバブルが酸性の性質となった処理液を供給ノズル７から載置テーブル２に載置された基板Ｗに噴射供給すれば、ナノバブルの持つ酸性の性質によって上記基板Ｗのデバイス面に対してライトエッチング、酸化膜の生成或いはメタル汚染の除去など、ナノバブルの酸性の性質を利用した種々の処理を行なうことができる。   In this way, if the treatment liquid in which the nanobubbles have an acidic property is jetted and supplied from the supply nozzle 7 to the substrate W placed on the placement table 2, the nanobubbles have an acidic property on the device surface of the substrate W. On the other hand, various treatments utilizing the acidic properties of nanobubbles, such as light etching, oxide film generation or metal contamination removal, can be performed.

基板Ｗのデバイス面に処理液Ｌを供給したならば、その処理液Ｌに含まれるナノバブルを超音波振動を利用して破壊するようにすれば、破壊された時に生じるエネルギによってナノバブルによる処理効率を向上させることができる。   If the processing liquid L is supplied to the device surface of the substrate W, if nanobubbles contained in the processing liquid L are destroyed using ultrasonic vibration, the processing efficiency by the nanobubbles can be increased by energy generated when the nanobubbles are destroyed. Can be improved.

上記一実施の形態ではナノバブルにプラスの電荷を帯電させるために、イオナイザを用いたり、酸性液体を用いるようにしたが、少なくともどちらか一方だけによってナノバブルにプラスの電荷を帯電させるようにしてもよい。   In the above embodiment, an ionizer or an acidic liquid is used to charge the nanobubbles with a positive charge. However, the nanobubbles may be charged with a positive charge only by at least one of them. .

この発明の一実施の形態を示す処理液の製造装置が用いられた基板の処理装置の概略的構成図。BRIEF DESCRIPTION OF THE DRAWINGS The schematic block diagram of the processing apparatus of the board | substrate in which the manufacturing apparatus of the process liquid which shows one embodiment of this invention was used. 処理液のｐＨ値とナノバブルのゼータ電位の関係を示す図。The figure which shows the relationship between the pH value of a process liquid, and the zeta potential of a nano bubble.

符号の説明Explanation of symbols

１…処理槽、３…載置テーブル、７…供給ノズル、１８…ナノバブル発生器、１９…気体供給ポンプ、２１…液体供給ポンプ、２２…イオナイザ、２３…給液タンク（酸性流体供給手段）。   DESCRIPTION OF SYMBOLS 1 ... Processing tank, 3 ... Mounting table, 7 ... Supply nozzle, 18 ... Nano bubble generator, 19 ... Gas supply pump, 21 ... Liquid supply pump, 22 ... Ionizer, 23 ... Supply tank (acid fluid supply means).

Claims (6)

基板を処理する処理液を製造する処理液の製造装置であって、
液体と気体を混合してナノバブルを含む上記処理液を製造するナノバブル発生器と、
このナノバブル発生器で発生するナノバブルにプラスの電荷を帯電させるプラス電荷付与手段と
を具備したことを特徴とする処理液の製造装置。 A processing liquid manufacturing apparatus for manufacturing a processing liquid for processing a substrate,
A nanobubble generator for producing the treatment liquid containing nanobubbles by mixing liquid and gas;
An apparatus for producing a treatment liquid, comprising: a positive charge imparting means for charging positive charges to the nanobubbles generated by the nanobubble generator. 上記プラス電荷付与手段は、上記ナノバブル発生器に供給される上記気体にプラスの電荷を付与するイオナイザであることを特徴とする請求項１記載の処理液の製造装置。   The apparatus for producing a treatment liquid according to claim 1, wherein the plus charge imparting means is an ionizer that imparts a plus charge to the gas supplied to the nanobubble generator. 上記プラス電荷付与手段は、上記ナノバブル発生器に酸性の液体を供給することを特徴とする請求項１記載の処理液の製造装置。   The apparatus for producing a treatment liquid according to claim 1, wherein the positive charge applying unit supplies an acidic liquid to the nanobubble generator. 基板を処理する処理液を製造する処理液の製造方法であって、
液体と気体を混合してナノバブルを含む上記処理液を製造する工程と、
上記処理液に含まれるナノバブルにプラスの電荷を帯電させる工程と
を具備したことを特徴とする処理液の製造方法。 A process liquid manufacturing method for manufacturing a process liquid for processing a substrate,
A step of producing a treatment liquid containing nanobubbles by mixing a liquid and a gas;
And a step of charging the nanobubbles contained in the treatment liquid with a positive charge. 基板を処理液によって処理する基板の処理装置であって、
処理槽と、
この処理槽内に上記基板を保持する保持手段と、
この保持手段に保持された基板の被処理面にナノバブルを含む処理液を供給する処理液の製造装置を具備し、
上記製造装置は請求項１に記載された構成であることを特徴とする基板の処理装置。 A substrate processing apparatus for processing a substrate with a processing liquid,
A treatment tank;
Holding means for holding the substrate in the processing tank;
A processing liquid manufacturing apparatus for supplying a processing liquid containing nanobubbles to the surface to be processed of the substrate held by the holding means,
A substrate processing apparatus having the structure described in claim 1. 基板を処理液によって処理する基板の処理方法であって、
処理槽内に基板を保持する工程と、
保持された基板の被処理面にナノバブルを含む処理液を供給する工程を具備し、
上記処理液は請求項４に記載された方法によって製造されることを特徴とする基板の処理方法。 A substrate processing method for processing a substrate with a processing liquid,
A step of holding the substrate in the treatment tank;
Comprising the step of supplying a processing liquid containing nanobubbles to the surface to be processed of the held substrate;
A method for treating a substrate, wherein the treatment liquid is produced by the method according to claim 4.
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