CN101572994A - Method for forming conducting wire on radiating substrate in a vacuum sputtering way - Google Patents
Method for forming conducting wire on radiating substrate in a vacuum sputtering way Download PDFInfo
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- CN101572994A CN101572994A CNA2008100247028A CN200810024702A CN101572994A CN 101572994 A CN101572994 A CN 101572994A CN A2008100247028 A CNA2008100247028 A CN A2008100247028A CN 200810024702 A CN200810024702 A CN 200810024702A CN 101572994 A CN101572994 A CN 101572994A
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- conducting
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- conducting wire
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Abstract
The invention relates to a method for forming a conducting wire on a radiating substrate in a vacuum sputtering way, which is characterized by comprising the following steps: a metal substrate is provided and is arranged in a plasma reaction chamber; gas mixture mixed with high subversive gas is led into the plasma reaction chamber, the surface of the metal substrate is irregularly corroded to form nanometer surface roughness; plasma chemical vapor disposition is performed in the plasma reaction chamber to produce radical plasmas, and a high heat-conducting film layer is form on the surface of the metal substrate; the outer layer of the metal substrate on which the high heat-conducting film layer is formed is sputtered with a metal conducting layer and a metal protecting layer; and a conductor part of an etch-resisting film shielding circuit diagram is etched to remove a nonconductor part and then an etch-resisting film is removed. The invention has simple process, best heat conduction and environmental-friendly process.
Description
[technical field]
The present invention is a kind of method that forms the conducting wire on insulated substrate, particularly adopts vacuum splashing and plating technology to form the method for conducting wire on heat-radiating substrate.
[background technology]
The conducting wire substrate of electronic product is to make circuit at plastic base or on through the metal substrate after the insulating heat-conductive processing at present, in order to improve its thermal diffusivity fin of finned such as aluminium and copper below the substrate of conducting wire again.In addition, the heat-conducting glue of connection usefulness becomes bottleneck point of following high power electronic components and parts heat radiation between conducting wire substrate and the fin.
Electricity pulp vapour deposition (Plasma Chemical Vapor Deposition, PCVD) principle: by electric field, the collision that gas molecule is subjected to enough energy electrons can produce ion, free radical (Free Radical), atom, molecule remains, photon and more electronics under the environment of gas in low pressure.Electricity slurry utilizes high energy electron or ion to destroy the bond of gas molecule and scission of link, utilize free radical that gas molecule produces to produce the organic-inorganic of particular utility or blend together film again against the surface that is delivered in plated body of low-pressure vapor phase diffusion. because chemical reaction is to carry out in gas phase and with the surface of plated body simultaneously, the deposited film of its generation is the highly cross-linked deposited film of form generation with noncrystalline (amorphous), can't come standard with rigorous chemical composition molecular formula, and how the characteristic of the physical chemistry of Mi Houdu deposited film and photoelectricity really can reach general traditional plated film and is beyond one's reach.
In view of this, the coating thin film technology that is necessary in fact to provide a kind of novelty of using electricity slurry vapour deposition process directly prepares the method for high efficiency and heat radiation circuit in conjunction with the vacuum splashing and plating technology on heat-radiating substrate.
[summary of the invention]
Main purpose of the present invention is to provide the method for vacuum splashing and plating formation conducting wire on a kind of heat-radiating substrate, and making technology is simple, the technology environmental protection.
For reaching above-mentioned purpose, the invention provides the method for vacuum splashing and plating formation conducting wire on a kind of heat-radiating substrate, it is characterized in that may further comprise the steps: a metal base is provided and this metal base is placed plasma reaction chamber; The admixture of gas that is mixed with highly aggressive gas is fed in this plasma reaction chamber, scrambling ground is done on the surface of this metal base corroded to form the nanoscale surface roughness; In this plasma reaction chamber ionic medium chemical vapour deposition (CVD), produce the free radical plasma, and form high heat conduction rete on the surface of this metal base; Metal conducting layer and metal protection layer on the outer sputter of the metal base that is formed with high heat conduction rete; The conductor part of etch-resisting film screened circuit figure, the non-conductor part is removed in etching, sloughs etch-resisting film again.
Compared with prior art, manufacturing process of the present invention is simple, and thermal conductivity is good, and the technology environmental protection.
[description of drawings]
Fig. 1 forms the process chart of the method for conducting wire for vacuum splashing and plating on the heat-radiating substrate of the present invention.
[embodiment]
See also shown in Figure 1ly, the method that vacuum splashing and plating forms the conducting wire on the heat-radiating substrate of the present invention may further comprise the steps:
Step 201 a: metal base is provided and this metal base is placed plasma reaction chamber (plasma reaction chamber can be batch or continous way (in-line) CVD (Chemical Vapor Deposition) reactor), when metal base was placed in the plasma, metallic substrate surface can be with the negative voltage of 20～30volts.Wherein, the surface of this metal base is Any shape and any surface state such as strip, plane, curved surface or three-dimensional.The material of this metal base is one of aluminium, copper and its alloy.And this metal base needs through pre-treatment, and pre-treatment comprises degreasing, pickling, and steps such as cleaning make the cleaning surfaces of this metal base.
Step 202: plasma pre-treatment
To be mixed with highly aggressive gas (as CF
4, CF
2Cl
2, Cl
2Deng one or more) admixture of gas feed in this plasma reaction chamber, scrambling ground is done on the surface of this metal base to be corroded to form the nanoscale surface roughness; Wherein, also comprise reactant gas (can be nitrogen or oxygen) or inert gas (can be Ar or He) in the admixture of gas.
Step 203: plasma gas-phase deposit
In this plasma reaction chamber ionic medium chemical vapour deposition (CVD), so that the surface of this metal base forms high heat conduction rete, wherein, this high heat conducting coating comprises plasma interface conversion layer and plasma high heat conductive insulating layer, and high heat conduction rete is that composite stack forms.The concrete steps of plasma gas-phase deposit comprise: plasma gas-phase deposit graded bedding and plasma gas-phase deposit high heat conductive insulating layer.
The concrete steps of plasma gas-phase deposit graded bedding: will be mixed with silicon source predecessor (precursor, as TMS) admixture of gas feed in this plasma reaction chamber, wherein, also comprise reactant gas in the admixture of gas, and reactant gas comprises gaseous oxygen or steam.Produce the first free radical plasma by this admixture of gas of plasma activation in plasma reaction chamber, the first free radical plasma produces plasma interface conversion layer (for example silicon dioxide) against the surface that low-pressure vapor phase is diffused in this metal base.The plasma interface conversion layer can be the hydrophobic or hydrophilic characteristic surface who converts may command and homogeneous in metal surface, and can reduce surface roughness by big spoke.The thickness that can control the plasma interface conversion layer is from about 10 nanometers to 10 micron.Can change the gas phase composition at any time and form and reach plasma interface conversion layer of different nature, and the structure of this plasma interface conversion layer can be monofilm or multilayer film, and be the gradual change shape between the rete of multilayer film.
The concrete steps of plasma gas-phase deposit high heat conductive insulating layer: the admixture of gas that will be mixed with high heat conduction chemistry precursors feeds in this plasma reaction chamber, wherein, include the high heat conduction chemistry precursors of metal or pottery in the admixture of gas (as the precursors Ta (EtCp) of Tatanlum
2(CO) HEtCp or Al (CH
3)
3), reactant gas is (as O
2, N
2, H
2O, NH
3Deng) and inert gas (as Ar, He or the like).In plasma reaction chamber, produce the second free radical plasma by this admixture of gas of plasma activation, the second free radical plasma produces plasma high heat conductive insulating layer against the surface that low-pressure vapor phase is diffused in this plasma interface conversion layer, wherein, the high heat conductive insulating layer that is produced can be Al
2O
3, AlN, BeO and Ta
2O
5High heat conductive insulating layer thickness control is from about 20 nanometers to 10 micron.
Step 204: metal conducting layer and metal protection layer on the outer sputter of metal base of aluminium nitride film arranged in generation; Wherein, the step of jet-plating metallization conductive layer and metal protection layer is as follows:
The concrete steps of jet-plating metallization conductive layer: have the metal base of aluminium nitride film to insert in the vacuum chamber generation, be evacuated to 10
5Behind the torr, feed argon gas and maintain 1～3 * 10
-3Torr, start the substrate back bias voltage-300～-600Volt, start sputter copper target this moment, the current density of control sputtered target material is at 0.1～1W/cm
2, carry out copper facing, about 0.5～5 μ m of copper film THICKNESS CONTROL;
The concrete steps of jet-plating metallization overcoat: have the metal base of copper film to insert another vacuum chamber sputter, feed argon gas and maintain 1～3 * 10
-3Torr starts sputter gold target material or nickel gold target material this moment, and the current density of control sputtered target material is at 0.1～1W/cm
2, plated with gold film or nickel gold thin film, about 0.1～1 μ m of the THICKNESS CONTROL of golden film or nickel gold thin film.
Step 205: etch-resisting film is with the mode of printing or the conductor part of the mode screened circuit figure of exposure imaging, and the non-conductor part is removed in etching, sloughs etch-resisting film again; Wherein, etch recipe is: phosphoric acid 500ml/L, and glacial acetic acid 400ml/L, nitric acid 100ml/L, etch temperature is a room temperature, etching period is 60-120s.
Claims (21)
1. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate, it is characterized in that may further comprise the steps:
(1) provide a metal base also this metal base to be placed plasma reaction chamber;
(2) admixture of gas that will be mixed with highly aggressive gas feeds in this plasma reaction chamber, scrambling ground is done on the surface of this metal base corroded to form the nanoscale surface roughness;
(3), produce the free radical plasma, and form high heat conduction rete on the surface of this metal base in this plasma reaction chamber ionic medium chemical vapour deposition (CVD);
(4) metal conducting layer and metal protection layer on the outer sputter of the metal base that is formed with high heat conduction rete;
(5) conductor part of etch-resisting film screened circuit figure, the non-conductor part is removed in etching, sloughs etch-resisting film again.
2. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, and it is characterized in that: the surface of this metal base is strip, plane, curved surface or 3D shape.
3. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the material of this metal base is any in aluminium, copper and its alloy.
4. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, and it is characterized in that: this plasma reaction chamber is batch or continous way CVD (Chemical Vapor Deposition) reactor.
5. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, and it is characterized in that: this metal base has passed through pre-treatment before entering plasma reaction chamber, pre-treatment comprises degreasing, and pickling is cleaned.
6. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: also comprise reactant gas or inert gas in the admixture of gas in the step (2).
7. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, and it is characterized in that: the highly aggressive gas in the step (2) is CF
4, CF
2Cl
2, Cl
2In one or more.
8. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the high heat conducting coating in the step (3) comprises plasma interface conversion layer and plasma high heat conductive insulating layer, and high heat conduction rete is that compound storehouse forms.
9. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 8, and it is characterized in that: the concrete steps of step (3) comprising:
(3.1) admixture of gas that will be mixed with silicon source predecessor feeds in this plasma reaction chamber, produce the first free radical plasma by this admixture of gas of plasma activation in plasma reaction chamber, the first free radical plasma produces the plasma interface conversion layer against the surface that low-pressure vapor phase is diffused in this metal base;
(3.2) admixture of gas of chemical precursors that will be mixed with metal or pottery feeds in this plasma reaction chamber; Produce the second free radical plasma in plasma reaction chamber by this admixture of gas of plasma activation, the second free radical plasma produces plasma high heat conductive insulating layer against the surface that low-pressure vapor phase is diffused in this plasma interface conversion layer.
10. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 9, and it is characterized in that: the admixture of gas of step (3.1) also comprises reactant gas, and reactant gas is oxygen or steam.
11. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 9, it is characterized in that: the plasma interface conversion layer is a monofilm.
12. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 9, it is characterized in that: the plasma interface conversion layer is a multilayer film.
13. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 9, it is characterized in that: the chemical precursors of the metal of step (3.2) or pottery is (Ta (EtCp)
2(CO) HEtCp or Al (CH
3)
3In a kind of.
14. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 9, it is characterized in that: the admixture of gas of step (3.2) also comprises reactant gas and inert gas.
15. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 14, it is characterized in that: the reactant gas of step (3.2) is O
2, N
2, H
2O, NH
3
16. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the step of jet-plating metallization conductive layer comprises in the step (4), there is the metal base of aluminium nitride film to insert in the vacuum chamber generation, is evacuated to 10
-5Behind the torr, feed argon gas and maintain 1～3 * 10
-3Torr, start the substrate back bias voltage-300～-600Volt, start sputter copper target this moment, the current density of control sputtered target material is at 0.1～1W/cm
2, carry out copper facing, about 0.5～5 μ m of copper film THICKNESS CONTROL.
17. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 16, it is characterized in that: the step of jet-plating metallization overcoat comprises in the step (4), there is the metal base of copper film to insert another vacuum chamber sputter, feeds argon gas and maintain 1～3 * 10
-3Torr starts sputter gold target material this moment, and the current density of control sputtered target material is at 0.1～1W/cm
2, carry out gold-platedly, golden film thickness is controlled about 0.1～1 μ m.
18. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 16, it is characterized in that: the step of jet-plating metallization overcoat comprises in the step (4), there is the metal base of copper film to insert another vacuum chamber sputter, feeds argon gas and maintain 1～3 * 10
-3Torr starts sputter nickel gold target material this moment, and the current density of control sputtered target material is at 0.1～1W/cm
2, plated with nickel gold thin film, about 0.1～1 μ m of the THICKNESS CONTROL of nickel gold thin film.
19. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the etch recipe in the step (5) is: phosphoric acid 500ml/L, glacial acetic acid 400ml/L, nitric acid 100ml/L, etch temperature is a room temperature, and etching period is 60-120s.
20. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the etch-resisting film in the step (5) is shielded in the mode of printing.
21. vacuum splashing and plating forms the method for conducting wire on the insulated heat-conducting metal substrate according to claim 1, it is characterized in that: the etch-resisting film in the step (5) is shielded in the mode of exposure imaging.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100247028A CN101572994B (en) | 2008-04-29 | 2008-04-29 | Method for forming conducting wire on radiating substrate in a vacuum sputtering way |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100247028A CN101572994B (en) | 2008-04-29 | 2008-04-29 | Method for forming conducting wire on radiating substrate in a vacuum sputtering way |
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| Publication Number | Publication Date |
|---|---|
| CN101572994A true CN101572994A (en) | 2009-11-04 |
| CN101572994B CN101572994B (en) | 2012-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100247028A Expired - Fee Related CN101572994B (en) | 2008-04-29 | 2008-04-29 | Method for forming conducting wire on radiating substrate in a vacuum sputtering way |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916731A (en) * | 2010-07-12 | 2010-12-15 | 深圳大学 | Ceramic insulating film heat-conducting substrate and manufacturing method thereof |
| CN102367951A (en) * | 2010-12-28 | 2012-03-07 | 浙江德胜新能源科技股份有限公司 | Light emitting diode (LED) lamp having light weight and quick heat radiation and manufacturing method thereof |
| CN103597917A (en) * | 2011-02-15 | 2014-02-19 | 布罗斯汽车零件维尔茨堡两合公司 | Temperature control element and method for attaching an electronic component to the temperature control element |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003103352A1 (en) * | 2002-06-04 | 2003-12-11 | 住友電気工業株式会社 | Board for printed wiring, printed wiring board, and method for manufacturing them |
| JP2008021953A (en) * | 2006-07-10 | 2008-01-31 | Taniguchi Consulting Engineers Co Ltd | Method for forming circuit pattern |
| JP5070767B2 (en) * | 2006-08-28 | 2012-11-14 | トヨタ自動車株式会社 | Plating process and fine pitch wiring board manufacturing method |
-
2008
- 2008-04-29 CN CN2008100247028A patent/CN101572994B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101916731A (en) * | 2010-07-12 | 2010-12-15 | 深圳大学 | Ceramic insulating film heat-conducting substrate and manufacturing method thereof |
| CN101916731B (en) * | 2010-07-12 | 2012-07-04 | 深圳大学 | Ceramic insulating film heat-conducting substrate and manufacturing method thereof |
| CN102367951A (en) * | 2010-12-28 | 2012-03-07 | 浙江德胜新能源科技股份有限公司 | Light emitting diode (LED) lamp having light weight and quick heat radiation and manufacturing method thereof |
| CN102367951B (en) * | 2010-12-28 | 2015-05-13 | 浙江德胜新能源科技股份有限公司 | Manufacturing method of light emitting diode (LED) lamp having light weight and quick heat radiation |
| CN103597917A (en) * | 2011-02-15 | 2014-02-19 | 布罗斯汽车零件维尔茨堡两合公司 | Temperature control element and method for attaching an electronic component to the temperature control element |
| CN103597917B (en) * | 2011-02-15 | 2016-12-21 | 布罗斯汽车零件维尔茨堡两合公司 | Temperature control component and attach electronic component to the method for described temperature control component |
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| Publication number | Publication date |
|---|---|
| CN101572994B (en) | 2012-01-04 |
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