CN101565857A - Method of thermally bonding single-end growing type composite crystal into double-end growing type composite crystal - Google Patents
Method of thermally bonding single-end growing type composite crystal into double-end growing type composite crystal Download PDFInfo
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- CN101565857A CN101565857A CNA2009100989751A CN200910098975A CN101565857A CN 101565857 A CN101565857 A CN 101565857A CN A2009100989751 A CNA2009100989751 A CN A2009100989751A CN 200910098975 A CN200910098975 A CN 200910098975A CN 101565857 A CN101565857 A CN 101565857A
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Abstract
The invention discloses a method of thermally bonding single-end growing type composite crystal into double-end growing type composite crystal, which comprises the following steps of: 1) selecting two single-end growing type composite crystals which comprise a doped region and a non-doped region; 2) setting the length of the doped region of the double-end growing type composite crystal as d2 and the length of the non-doped region at one end of the double-end growing type composite crystal as d1 and the length of the non-doped region at the other end of the double-end growing type composite crystal as d3 and confirming the lengths of the two single-end growing type composite crystals through a polishing method; and 3) connecting the doped regions of the two single-end growing type composite crystals together by a thermal bonding technical method. The method of thermally bonding single-end growing type composite crystal into double-end growing type composite crystal improves the commonality and reduces the production cost, can obtain the double-end growing type composite crystal only by mastering the growing technique of the single-end growing type composite crystal and matching with a mature thermal bonding technique, and reduces the technique difficulty of the double-end growing type composite crystal.
Description
Technical field
The present invention relates to the laser crystals processing technique field, relate in particular to a kind of method that single-ended growing type composite crystal hot key is combined into double-end growing type composite crystal.
Background technology
The solid statelaser of laser diode end-face pump than under the condition with higher, uses the thermal bonding laser crystals at pump power, can effectively reduce laser crystals temperature inside gradient and end face deformation, and then reduce the thermal lensing effect of laser crystals.If but continuing to increase pump power, the temperature of crystalline thermal bonding junction raises, and can cause the fracture of thermal bonding junction, the serious consequence that laser crystals can't continue to use.At the problems referred to above, the composite crystal (or claiming the primary type composite crystal) of growth form has appearred in recent years, compares with traditional thermal bonding composite crystal, growing type composite crystal has higher anti-light injury threshold.
Growing type composite crystal can be divided into single-ended growing type composite crystal and double-end growing type composite crystal according to the difference of its mode of operation.The growth technique of single-ended growing type composite crystal is simple relatively, even and crystal grown and finished, also can determine the length in the doped region and the district that undopes as required flexibly by the means of polishing.But the growth technique more complicated of double-end growing type composite crystal, and the length of doped region has just been determined in crystal growing process, lack versatility, so cost is higher.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of method that single-ended growing type composite crystal hot key is combined into double-end growing type composite crystal is provided.
The method that single-ended growing type composite crystal hot key is combined into double-end growing type composite crystal comprises the steps:
1) composite crystal of two single-ended growth forms of selection, the composite crystal of single-ended growth form comprises doped region and the district that undopes, and the length in the district that undopes is 0.1mm～20mm, and the crystal-cut direction is a-cut or c-cut, and doping content is 0.01～10at.%;
2) length of the doped region of setting double-end growing type composite crystal is d
2, the length in the district that undopes of double-end growing type composite crystal one end is d
1, the length in the district that undopes of the double-end growing type composite crystal the other end is d
3Determine the length of the composite crystal of two single-ended growth forms by the method for polishing, wherein, the length in the district that undopes of a single-ended growing type composite crystal is d
1', doped region length is d
2', the length in the district that undopes of the single-ended growing type composite crystal of another piece is d
3', doped region length is d
2", and the d that meets the following conditions
1'=d
1, d
3'=d
3, d
2'+d
2"=d
2
3) end face with doped region one end of two single-ended growing type composite crystals carries out meticulous polishing, at room temperature be in contact with one another, the crystalline optical axis overlaps, heat-treat then, the temperature range of using in the heat treatment process is 0.1～0.9 times of that lower piece crystalline fusing point of fusing point in institute's bonding crystal, the time that high temperature keeps is at 4～80 hours, and the processing method by thermal bonding links together the doped region of two single-ended growing type composite crystals.The composite crystal of described single-ended growth form is YAG crystal, YVO
4Crystal, GdVO
4Crystal, YAP crystal or YLF crystal.The dopant ion of doped region is Nd
3+, Er
3+, Ho
3+, Ce
3+, Tm
3+, Pr
3+, Gd
3+, Eu
3+, Yb
3+, Sm
2+, Dy
2+, Tm
2+, Cr
3+, Ni
2+, Co
2+, Ti
3+Perhaps V
2+Ion.The composite crystal cross section of single-ended growth form is rectangle or circle.Cross section is that orthogonal is of a size of 1 * 1mm～20 * 20mm.Cross section is 1mm～20mm for circular diameter.
The present invention can determine the length of doped region in the double-end growing type composite crystal easily as required, improves versatility, reduces production costs.Only need to grasp the growth technique of single-ended growing type composite crystal, cooperate sophisticated thermal bonding technology, just can obtain double-end growing type composite crystal, reduced the technology difficulty of double-end growing type composite crystal.
Description of drawings
Fig. 1 is the structure and the size synoptic diagram of the double-end growing type composite crystal of setting;
Fig. 2 is the structure and the size synoptic diagram of the present invention's two single-ended growing type composite crystals being used for thermal bonding;
Fig. 3 is the effect synoptic diagram that the method for doped region by thermal bonding of two single-ended growing type composite crystals links together;
Fig. 4 is the wavefront interferogram of the double-end growing type composite crystal of thermal bonding.
Embodiment
Principle of the present invention is: the doped region of the two single-ended growing type composite crystals method by thermal bonding is linked together, because the thermal value of thermal bonding junction is less, even also easy fracture not of thermal bonding place under the very big situation of pump power like this, thereby the crystalline characteristic is equal to or approaches double-end growing type composite crystal, reduce the technology difficulty of double-end growing type composite crystal and the versatility of product.Simultaneously, can control the doped region length of two single-ended growing type composite crystals, thereby finally control the doped region length of double-end growing type composite crystal easily by the method for polishing.The thermal bonding method at first is that the crystal with two meticulous polishings of process is close together under the condition of room temperature.Plane of crystal can obtain hydrophilic surface after treatment, and the high and thin hydrophilic surface of roughness of two working accuracies can rely on the effect of hydrogen bond at room temperature to attract each other, the formation optical cement.Be heat treatment process then, the crystal behind the optical cement put into process furnace kept 4～80 hours.Along with the rising of temperature, the diffusion on interface of ion and hole aggravates gradually, and because there are a lot of dangling bondss on the surface, can form permanent bonding at last through the lattice adjustment and the reconstruct of certain hour.Experiment showed, that bonding process itself can not introduce any optical heterogeneity, can not cause the reduction of output beam quality.
The method that single-ended growing type composite crystal hot key is combined into double-end growing type composite crystal comprises the steps:
1) composite crystal of two single-ended growth forms of selection, the composite crystal of single-ended growth form comprises doped region and the district that undopes, and the length in the district that undopes is 0.1mm～20mm, and the crystal-cut direction is a-cut or c-cut, and doping content is 0.01～10at.%;
2) length of the doped region of setting double-end growing type composite crystal is d
2, the length in the district that undopes of double-end growing type composite crystal one end is d
1, the length in the district that undopes of the double-end growing type composite crystal the other end is d
3, determine the length of the composite crystal of two single-ended growth forms by the method for polishing, wherein, the length in the district that undopes of a single-ended growing type composite crystal is d
1', doped region length is d
2', the length in the district that undopes of the single-ended growing type composite crystal of another piece is d
3', doped region length is d
2", and the d that meets the following conditions
1'=d
1, d
3'=d
3, d
2'+d
2"=d
2
3) end face with doped region one end of two single-ended growing type composite crystals carries out meticulous polishing, at room temperature be in contact with one another, the crystalline optical axis overlaps, heat-treat then, the temperature range of using in the heat treatment process is 0.1～0.9 times of that lower piece crystalline fusing point of fusing point in institute's bonding crystal, the time that high temperature keeps is at 4～80 hours, and the processing method by thermal bonding links together the doped region of two single-ended growing type composite crystals.
The composite crystal of described single-ended growth form is YAG crystal, YVO
4Crystal, GdVO
4Crystal, YAP crystal or YLF crystal.The dopant ion of doped region is Nd
3+, Er
3+, Ho
3+, Ce
3+, Tm
3+, Pr
3+, Gd
3+, Eu
3+, Yb
3+, Sm
2+, Dy
2+, Tm
2+, Cr
3+, Ni
2+, Co
2+, Ti
3+Perhaps V
2+Ion.The composite crystal cross section of single-ended growth form is rectangle or circle.Cross section is that orthogonal is of a size of 1 * 1mm～20 * 20mm.Cross section is 1mm～20mm for circular diameter.
Further specify the present invention according to specific embodiment below.
Embodiment 1:
1) composite crystal of two single-ended growth forms of selection, the composite crystal of single-ended growth form comprises doped region and undope district (Nd:YAG+YAG crystal, perhaps Nd:YVO
4+ YVO
4Crystal, perhaps Nd:GdVO
4+ GdVO
4Crystal, perhaps Nd:YAP+YAP crystal, perhaps Nd:YLF+YLF crystal), the length in the district that undopes is 0.1mm, the crystal-cut direction is a-cut or c-cut, doped region Nd
3+The ionic doping content is 0.01at.%, and the crystal cross section is rectangle or circle, and cross section is that orthogonal is of a size of 1mm * 1mm, and cross section is 1mm for circular diameter.；
2) length of the doped region of setting double-end growing type composite crystal is d
2=16mm, the length in the district that undopes of double-end growing type composite crystal one end is d
1=0.1mm, the length in the district that undopes of the double-end growing type composite crystal the other end is d
3=0.1mm determines the length of the composite crystal of two single-ended growth forms by the method for polishing, and wherein, the length in the district that undopes of a single-ended growing type composite crystal is d
1'=0.1mm, doped region length is d
2'=8mm, the length in the district that undopes of the single-ended growing type composite crystal of another piece is d
3'=0.1mm, doped region length is d
2" 8mm, thereby meet the following conditions d
1'=d
1, d
3'=d
3, d
2'+d
2"=d
2
3) end face with doped region one end of two single-ended growing type composite crystals carries out meticulous polishing, and smooth finish to the strict cleaning in surface, contacts two crystal through the end face of meticulous polishing with chemical reagent then lightly less than 10/5, realizes optical cement.Heat-treat then, the temperature range of using in the heat treatment process is 0.1 times of institute's bonding crystalline fusing point, and the time that high temperature keeps is at 4 hours, and the processing method by thermal bonding links together the doped region of two single-ended growing type composite crystals.
Embodiment 2:
1) composite crystal of two single-ended growth forms of selection, the composite crystal of single-ended growth form comprises doped region and undope district (Nd:YAG+YAG crystal, perhaps Nd:YVO
4+ YVO
4Crystal, perhaps Nd:GdVO
4+ GdVO
4Crystal, perhaps Nd:YAP+YAP crystal, perhaps Nd:YLF+YLF crystal), the length in the district that undopes is 20mm, the crystal-cut direction is a-cut or c-cut, doped region Nd
3+The ionic doping content is 10at.%, and the crystal cross section is rectangle or circle, and cross section is that orthogonal is of a size of 20mm * 20mm, and cross section is 20mm for circular diameter.；
2) length of the doped region of setting double-end growing type composite crystal is d
2=16mm, the length in the district that undopes of double-end growing type composite crystal one end is d
1=20mm, the length in the district that undopes of the double-end growing type composite crystal the other end is d
3=20mm determines the length of the composite crystal of two single-ended growth forms by the method for polishing, and wherein, the length in the district that undopes of a single-ended growing type composite crystal is d
1'=20mm, doped region length is d
2'=8mm, the length in the district that undopes of the single-ended growing type composite crystal of another piece is d
3'=20mm, doped region length is d
2"=8mm, thus meet the following conditions d
1'=d
1, d
3'=d
3, d
2'+d
2"=d
2
3) end face with doped region one end of two single-ended growing type composite crystals carries out meticulous polishing, and smooth finish to the strict cleaning in surface, contacts two crystal through the end face of meticulous polishing with chemical reagent then lightly less than 10/5, realizes optical cement.Heat-treat then, the temperature range of using in the heat treatment process is 0.9 times of institute's bonding crystalline fusing point, and the time that high temperature keeps is at 80 hours, and the processing method by thermal bonding links together the doped region of two single-ended growing type composite crystals.
Embodiment 3:
Two single-ended growing type composite crystal (YVO have been prepared in the experiment
4+ Nd:YVO
4), doped region Nd
3+The ionic doping content is 0.3at.%, and the crystal cross section is rectangle, and size is 3mm * 3mm, and crystal length is 10mm, and wherein the length in the district that undopes of a single-ended growing type composite crystal is d
1'=2mm, doped region length is d
2'=8mm, the length in the district that undopes of the single-ended growing type composite crystal of another piece is d
3'=2mm, doped region length is d
2"=8mm.The cut direction of two single-ended growing type composite crystals is a-cut, logical light face a mirror polish, parallelism is less than 6 ".End face to doped region one end of two single-ended growing type composite crystals carries out meticulous polishing, and smooth finish to the strict cleaning in surface, contacts two crystal through the end face of meticulous polishing with chemical reagent then lightly less than 10/5, realizes optical cement.Crystal behind the optical cement is placed on even heating in the process furnace, and temperature slowly is raised to 750 ℃ from room temperature, keeps constant temperature 60 hours, and then slowly drops to room temperature, has promptly realized the thermal bonding to two single-ended growing type composite crystals.Crystal behind the thermal bonding is from approaching double-end growing type composite crystal in nature, and the length of the doped region of the double-end growing type composite crystal of equivalence is d
2=16mm, the length in the district that undopes of one end is d
1=2mm, the length in the district that undopes of the other end is d
3=2mm.
Detected thermal bonding crystalline quality by the method that detects crystal wavefront fringe pattern in the experiment.The logical light face of thermal bonding crystalline in the experiment is polished again, the thermal bonding crystalline wavefront properties that adopted interferometer measurement, fringe pattern is as shown in Figure 4.The peak-to-peak value that records the wavefront fringe pattern is 0.08 λ (λ is test light wavelength 632.8nm).Find that by the wavefront interferogram bonding crystal has good wavefront interference pattern, does not introduce any optical heterogeneity, therefore can not cause the reduction of beam quality.
Claims (6)
1. one kind is combined into the method for double-end growing type composite crystal with single-ended growing type composite crystal hot key, it is characterized in that comprising the steps:
1) composite crystal of two single-ended growth forms of selection, the composite crystal of single-ended growth form comprises doped region and the district that undopes, and the length in the district that undopes is 0.1mm～20mm, and the crystal-cut direction is a-cut or c-cut, and doping content is 0.01～10at.%;
2) length of the doped region of setting double-end growing type composite crystal is d
2, the length in the district that undopes of double-end growing type composite crystal one end is d
1, the length in the district that undopes of the double-end growing type composite crystal the other end is d
3, determine the length of the composite crystal of two single-ended growth forms by the method for polishing, wherein, the length in the district that undopes of a single-ended growing type composite crystal is d
1', doped region length is d
2', the length in the district that undopes of the single-ended growing type composite crystal of another piece is d
3', doped region length is d
2", and the d that meets the following conditions
1'=d
1, d
3'=d
3, d
2'+d
2"=d
2
3) end face with doped region one end of two single-ended growing type composite crystals carries out meticulous polishing, at room temperature be in contact with one another, the crystalline optical axis overlaps, heat-treat then, the temperature range of using in the heat treatment process is 0.1～0.9 times of that lower piece crystalline fusing point of fusing point in institute's bonding crystal, the time that high temperature keeps is at 4～80 hours, and the processing method by thermal bonding links together the doped region of two single-ended growing type composite crystals.
2. according to claim 1ly a kind of single-ended growing type composite crystal hot key is combined into the method for double-end growing type composite crystal, the composite crystal that it is characterized in that described single-ended growth form is YAG crystal, YVO
4Crystal, GdVO
4Crystal, YAP crystal or YLF crystal.
3. according to claim 1ly a kind of single-ended growing type composite crystal hot key is combined into the method for double-end growing type composite crystal, the dopant ion that it is characterized in that described doped region is Nd
3+, Er
3+, Ho
3+, Ce
3+, Tm
3+, Pr
3+, Gd
3+, Eu
3+, Yb
3+, Sm
2+, Dy
2+, Tm
2+, Cr
3+, Ni
2+, Co
2+, Ti
3+Perhaps V
2+Ion.
4. according to claim 1ly a kind of single-ended growing type composite crystal hot key is combined into the method for double-end growing type composite crystal, the composite crystal cross section that it is characterized in that described single-ended growth form is rectangle or circle.
5. according to claim 1ly a kind of single-ended growing type composite crystal hot key is combined into the method for double-end growing type composite crystal, it is characterized in that described cross section is that orthogonal is of a size of 1 * 1mm～20 * 20mm.
6. according to claim 1ly a kind of single-ended growing type composite crystal hot key is combined into the method for double-end growing type composite crystal, it is characterized in that described cross section is 1mm～20mm for circular diameter.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103436966A (en) * | 2013-08-13 | 2013-12-11 | 安徽环巢光电科技有限公司 | Method for bonding doped or pure yttrium aluminum garnet crystal and doped yttrium aluminum garnet crystal by molten salt method |
| CN106087055A (en) * | 2016-06-15 | 2016-11-09 | 北京雷生强式科技有限责任公司 | A kind of yttrium aluminate composite crystal and preparation method thereof |
| CN108823639A (en) * | 2018-07-09 | 2018-11-16 | 北京工业大学 | 1.5 micron wave length hot keys of one kind and laser cooling preparation method |
-
2009
- 2009-05-25 CN CNA2009100989751A patent/CN101565857A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103436966A (en) * | 2013-08-13 | 2013-12-11 | 安徽环巢光电科技有限公司 | Method for bonding doped or pure yttrium aluminum garnet crystal and doped yttrium aluminum garnet crystal by molten salt method |
| CN103436966B (en) * | 2013-08-13 | 2016-05-04 | 安徽环巢光电科技有限公司 | The method of the doping of molten-salt growth method bonding or pure yttrium-aluminium-garnet and doped yttrium aluminum garnet crystal |
| CN106087055A (en) * | 2016-06-15 | 2016-11-09 | 北京雷生强式科技有限责任公司 | A kind of yttrium aluminate composite crystal and preparation method thereof |
| CN108823639A (en) * | 2018-07-09 | 2018-11-16 | 北京工业大学 | 1.5 micron wave length hot keys of one kind and laser cooling preparation method |
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Open date: 20091028 |