CN108823639A - 1.5 micron wave length hot keys of one kind and laser cooling preparation method - Google Patents
1.5 micron wave length hot keys of one kind and laser cooling preparation method Download PDFInfo
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- CN108823639A CN108823639A CN201810747488.2A CN201810747488A CN108823639A CN 108823639 A CN108823639 A CN 108823639A CN 201810747488 A CN201810747488 A CN 201810747488A CN 108823639 A CN108823639 A CN 108823639A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1608—Solid materials characterised by an active (lasing) ion rare earth erbium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/162—Solid materials characterised by an active (lasing) ion transition metal
- H01S3/1621—Solid materials characterised by an active (lasing) ion transition metal cobalt
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Abstract
1.5 micron wave length hot keys of one kind and laser cooling preparation method, belong to laser crystal and technical field of solid laser.Include the following steps：The surface of erbium glass and Co-doped spinel is handled；After material surface working process, after cleaning, being activated, optical cement is carried out, after the good crystal of optical cement stands a period of time under normal temperature environment, is put into heating furnace to obtained Er:Yb:Glass-spinel is heat-treated；Heat treatment is carried out using heating, cooling according to the process of " slowly, staged ", while also using thermostatic process.The hot key and composite crystal Er obtained using the method for the present invention:Yb:glass-co:Spinel does Laser Experiments, can obtain 1.5 μm of laser output.
Description
Technical field
The present invention is 1.5 micron wave length hot keys of one kind and laser cooling preparation method, belongs to laser crystal and solid
Laser technology field.
Background technique
1.5 μm belong to human eye safe waveband, and are exactly in atmospheric window.It is obtained there are mainly two types of 1.5 μm of laser at present
Mode.One is by nonlinear optical process frequency transformation, another kind is that working-laser material directly generates two ways.Before
A kind of mode mainly utilizes optical parametric oscillation (OPO), and stimulated Raman scattering (SRS), the modes such as self-excitation Raman scattering realize frequency
Conversion obtains 1.5 μm of laser[1-5].Latter approach mainly includes 1.5 μm of laser semiconductor lasers of direct output and LD pumping
The glass crystal laser of er-doped ion.Er is mixed using LD pumping3+/Yb3+Codoped Phosphate Glass mode can satisfy peak value
The characteristics of power, small size etc. require, while having good beam quality, high conversion efficiency.In human gingival fibroblasts ranging/target
Have a wide range of applications demand in instruction, military and fiber optic communication.
Crystal bonding technology be by homogeneity or heterocrystal material, through crystal prepare (i.e. surface working process), cleaning,
It is activated, does not use any adhesive substance, directly fit under certain conditions integrally, crystal passes through Van der Waals force, divides
Sub- power, even atomic force are combined together.Crystal bonding technology has in terms of novel optical device, novel solid Laser Study
Very important meaning.
Summary of the invention
Present invention solves the technical problem that：To there is provided a kind of being implemented around laser output at 1.5 microns, Er:Yb:
Glass and co:The hot key and composite crystal preparation method of spinel.
Technical solution of the present invention includes the following steps：
(1) material surface working process
The Mohs' hardness 4~5 of Yb codoped phosphate glass, Yb codoped phosphate glass Er:Yb:Glass, it is simple below
Claim " erbium glass ", the surface of erbium glass is processed, Er is finally obtained:Yb:The surface Root Mean Square roughness σ of glass≤
0.3nm, face type≤λ/10；Co-doped spinel (co:Spinel Mohs' hardness) is 8, and co is ground and polished to it:Spinel's
Surface Root Mean Square roughness σ≤0.6nm, face type≤λ/10；
(2) thermal bonding
After step (1) material surface working process, after cleaning, being activated, optical cement, the good crystal of optical cement are carried out
After standing a period of time under normal temperature environment, heating furnace is put into obtained Er:Yb:Glass-spinel is heat-treated；Heat
Processing is carried out using heating, cooling according to the process of " slowly, staged ", while also using thermostatic process；
Set highest thermostat temperature T2For a certain temperature in 290-310 DEG C, preferably 300 DEG C；Room temperature-T1Rise 1- within every 5 minutes
2 DEG C (preferably 1 DEG C), T1For a certain temperature in 190-210 DEG C, preferably 200 DEG C；Then in T1Constant temperature is not less than 10 hours；Heating
From T1It is warming up to T2, 1-2 DEG C (preferably 1 DEG C) is risen within every 10 minutes, in T2Constant temperature is not less than 10 hours；Temperature-fall period and temperature-rise period
Symmetrically, but there is no thermostatic process；
The key element of heat treatment is heat treatment temperature and heat treatment time.The peak of heat treatment temperature is typically chosen two
0.4-0.9 times of low melting material fusing point in block crystal.In addition, crystal is undergone phase transition during heating in order to prevent, temperature
It is 80-100 DEG C low to be also required to the temperature undergone phase transition than crystal.The size of heat treatment time and bonding face, new chemical key-shaped
At related with the rate of arrangement.Under normal conditions, the high temperature hold time length of heat treatment was at 8-50 hours, according to heating material
Ingredient it is different, the real time can suitably shorten or lengthen.
Erbium glass is vitreous material, the fusing point that do not fix, and glass transition temperature is 450 DEG C.Spinelle
(spinel) fusing point is 2135 DEG C.The temperature spot difference of two materials is very big, and the highest thermostat temperature of heat treatment should be according to
The temperature spot of erbium glass considers.Further preferably highest thermostat temperature is set as 300 DEG C, to Er:Yb:Glass-spinel into
Row heat treatment.Heating, cooling is carried out according to the arrangement of " slowly, staged ", and -200 DEG C of room temperature rise 1 DEG C in every 5 minutes, at 200 DEG C
Constant temperature 10 hours, 200-300 DEG C rose 1 DEG C in every 10 minutes, 300 DEG C constant temperature 10 hours, temperature-fall period is symmetrical with temperature-rise period.Most
It is successfully realized Er eventually:Yb:The dissimilar material thermal bonding of glass-spinel.
The hot key and composite crystal Er obtained using the method for the present invention:Yb:glass-co:Spinel does Laser Experiments, energy
Access 1.5 μm of laser output.
Detailed description of the invention
Fig. 1 Er:Yb:Glass surface topography
Fig. 2 Surface Interference pattern
Fig. 3 co:Spinel surface topography
Fig. 4 appearing diagram；(a)co:Spinel and Er:Yb:glass；(b) hot key and composite crystal
Fig. 5 Er:Yb:glass-co:The big view field image of spinel bonded interface HR-TEM
Fig. 6 erbium glass-spinelle bonded crystals Experimental equipment
Specific embodiment
Below with reference to embodiment, the present invention will be further described, but the present invention is not limited to following embodiments.
Embodiment 1
1, surface processing (precision)
Yb codoped phosphate glass (Er:Yb:Glass, hereinafter referred to as " erbium glass ") Mohs' hardness 4~5, we make
Erbium glass surface is ground with 3 μm of partial size of diamond grinding fluid, at regular intervals, uses laser plane interferometer pair
Surface is checked, after the image of finished surface in interferometer becomes a round hot spot, then carries out next procedure of processing --- it is thick
Polishing.The rough polishing of erbium glass using 500 mesh of partial size (25 μm) cerium oxide polishing slurry carry out, at regular intervals after, make
Finished surface is checked with laser plane interferometer, when there are wide parallel stripes in the image of finished surface in interferometer, then
Carry out last finishing polish.The hardness of erbium glass is lower, and modification of surface morphology is very fast when polishing.Essence throws the oxidation using 1.5 μm
Cerium polishing fluid carries out finishing polish to erbium glass.In the finishing polish of progress, at regular intervals using laser plane interferometer and
Zygo contourgraph observes surface topography, guarantees that its flatness and roughness meet optical cement requirement.Finally obtain Er:Yb:
The surface Root Mean Square roughness σ of glass is 0.3nm, face type<λ/10.The detection image of Zygo contourgraph is as shown in Figure 1, face type
As shown in Figure 2.
Co-doped spinel (co:Spinel Mohs' hardness) is 8, grinds to it and polishing process is similar with erbium glass.Make
Plane of crystal is ground with 3 μm of partial size of alumina powder lapping liquid, uses 0.5 μm of partial size of alumina powder lapping liquid
Rough polishing is carried out to plane of crystal, smart throwing finally is carried out to plane of crystal using 0.05 μm of partial size of alumina powder lapping liquid
Light.co:The surface Root Mean Square roughness σ of spinel is 0.6nm, face type<λ/10.The detection image of Zygo contourgraph such as Fig. 3 institute
Show, face type is referring to shown in Fig. 3.
2, thermal bonding (technique)
After material surface working process, after cleaning, being activated, optical cement is carried out, the good crystal of optical cement is in room temperature
After standing a period of time under environment, it is put into heating furnace and is heat-treated.The key element of heat treatment is heat treatment temperature and Re Chu
Manage the time.
Highest thermostat temperature is set as 300 DEG C, to Er:Yb:Glass-spinel is heat-treated.Heating, cooling according to
The arrangement of " slowly, staged " carries out, and -200 DEG C of room temperature rise 1 DEG C in every 5 minutes, 200 DEG C constant temperature 10 hours, 200-300 DEG C is every
Rise 1 DEG C within 10 minutes, 300 DEG C constant temperature 10 hours, temperature-fall period is symmetrical with temperature-rise period.Finally it is successfully realized Er:Yb:
The dissimilar material thermal bonding of glass-spinel.
The co that binding experiments use:Spinel is having a size of diameter 22mm, thickness 3mm, Er:Yb:Glass is having a size of diameter
25mm, thickness 5mm.
In order to analyze Er:Yb:glass-co:The bonding effect of spinel, we use high resolution TEM (HR-
TEM big view field imaging) is carried out to the bonding face of the two, as shown in Figure 5.As can be seen from Figure 5, bonding face is smooth, without obvious shortcoming.
Hot key and composite crystal Er are used simultaneously:Yb:glass-co:Spinel does Laser Experiments, has obtained single pulse energy
120 μ J, pulsewidth 5ns, repetition rate 10Hz, M2=1.3 1.5 μm of laser output.
Claims (3)
1. a kind of 1.5 micron wave length hot keys and laser cooling preparation method, which is characterized in that include the following steps：
(1) material surface working process
The Mohs' hardness 4~5 of Yb codoped phosphate glass, Yb codoped phosphate glass Er:Yb:Glass, hereinafter referred to as
The surface of erbium glass is processed, finally obtains Er by " erbium glass ":Yb:The surface Root Mean Square roughness σ of glass≤
0.3nm, face type≤λ/10；Co-doped spinel (co:Spinel Mohs' hardness) is 8, and co is ground and polished to it:Spinel's
Surface Root Mean Square roughness σ≤0.6nm, face type≤λ/10；
(2) thermal bonding
After step (1) material surface working process, after cleaning, being activated, optical cement is carried out, the good crystal of optical cement is normal
After standing a period of time under warm environment, heating furnace is put into obtained Er:Yb:Glass-spinel is heat-treated；Heat treatment
It is carried out using heating, cooling according to the process of " slowly, staged ", while also using thermostatic process；
Set highest thermostat temperature T2For a certain temperature in 290-310 DEG C；Room temperature-T1Rise 1-2 DEG C within every 5 minutes, T1For 190-
A certain temperature in 210 DEG C；Then in T1Constant temperature is not less than 10 hours；It heats up from T1It is warming up to T2, rise within every 10 minutes 1-2 DEG C it is (excellent
Select 1 DEG C), in T2Constant temperature is not less than 10 hours, and temperature-fall period is symmetrical with temperature-rise period.
2. a kind of 1.5 micron wave length hot key described in accordance with the claim 1 and laser cooling preparation method, feature exist
In room temperature-T1Rise 1 DEG C within every 5 minutes.
3. a kind of 1.5 micron wave length hot key described in accordance with the claim 1 and laser cooling preparation method, feature exist
In T1It is 200 DEG C；It heats up from T1It is warming up to T2, rise 1 DEG C within every 10 minutes；T2It is 300 DEG C.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109942209A (en) * | 2019-04-25 | 2019-06-28 | 北京工业大学 | A kind of Yb codoped phosphate glass is bonded the preparation method of slab guide with magnesium fluoride crystal |
| CN110071414A (en) * | 2019-04-09 | 2019-07-30 | 青岛海泰光电技术有限公司 | Miniature Er-Yb codoped phosphate laser glass with both ends bonding body |
| CN113131320A (en) * | 2021-04-06 | 2021-07-16 | 北京工业大学 | Erbium glass planar waveguide passive Q-switched laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110071414A (en) * | 2019-04-09 | 2019-07-30 | 青岛海泰光电技术有限公司 | Miniature Er-Yb codoped phosphate laser glass with both ends bonding body |
| CN109942209A (en) * | 2019-04-25 | 2019-06-28 | 北京工业大学 | A kind of Yb codoped phosphate glass is bonded the preparation method of slab guide with magnesium fluoride crystal |
| CN113131320A (en) * | 2021-04-06 | 2021-07-16 | 北京工业大学 | Erbium glass planar waveguide passive Q-switched laser |
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Application publication date: 20181116 |