CN101563560B - 非接触式处理套件 - Google Patents

非接触式处理套件 Download PDF

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Publication number
CN101563560B
CN101563560B CN2007800470734A CN200780047073A CN101563560B CN 101563560 B CN101563560 B CN 101563560B CN 2007800470734 A CN2007800470734 A CN 2007800470734A CN 200780047073 A CN200780047073 A CN 200780047073A CN 101563560 B CN101563560 B CN 101563560B
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CN
China
Prior art keywords
process kit
ring
wall
deposition ring
deposition
Prior art date
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Active
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CN2007800470734A
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English (en)
Chinese (zh)
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CN101563560A (zh
Inventor
卡尔·布朗
普尼特·班杰
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN101563560A publication Critical patent/CN101563560A/zh
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Publication of CN101563560B publication Critical patent/CN101563560B/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
CN2007800470734A 2006-12-19 2007-12-13 非接触式处理套件 Active CN101563560B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US87075206P 2006-12-19 2006-12-19
US60/870,752 2006-12-19
PCT/US2007/087466 WO2008079722A2 (en) 2006-12-19 2007-12-13 Non-contact process kit

Publications (2)

Publication Number Publication Date
CN101563560A CN101563560A (zh) 2009-10-21
CN101563560B true CN101563560B (zh) 2012-07-18

Family

ID=39563165

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800470734A Active CN101563560B (zh) 2006-12-19 2007-12-13 非接触式处理套件

Country Status (5)

Country Link
JP (1) JP5666133B2 (https=)
KR (1) KR101504085B1 (https=)
CN (1) CN101563560B (https=)
SG (1) SG177902A1 (https=)
WO (1) WO2008079722A2 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP5194315B2 (ja) * 2008-07-04 2013-05-08 株式会社昭和真空 スパッタリング装置
US8900471B2 (en) 2009-02-27 2014-12-02 Applied Materials, Inc. In situ plasma clean for removal of residue from pedestal surface without breaking vacuum
CN102822379A (zh) * 2010-03-24 2012-12-12 佳能安内华股份有限公司 用于电子装置的制造方法和溅射方法
WO2012024061A2 (en) * 2010-08-20 2012-02-23 Applied Materials, Inc. Extended life deposition ring
CN108359957A (zh) 2010-10-29 2018-08-03 应用材料公司 用于物理气相沉积腔室的沉积环及静电夹盘
CN102676997A (zh) * 2012-06-11 2012-09-19 上海宏力半导体制造有限公司 一种物理气相沉积设备
CN104968829B (zh) * 2013-02-28 2017-05-10 佳能安内华股份有限公司 溅射设备
CN104746019B (zh) * 2013-12-26 2018-01-19 北京北方华创微电子装备有限公司 反应腔室及等离子体加工设备
CN105097604B (zh) * 2014-05-05 2018-11-06 北京北方华创微电子装备有限公司 工艺腔室
WO2015188879A1 (en) * 2014-06-13 2015-12-17 Applied Materials, Inc. Flat edge design for better uniformity and increased edge lifetime
US10115573B2 (en) * 2014-10-14 2018-10-30 Applied Materials, Inc. Apparatus for high compressive stress film deposition to improve kit life
US10546733B2 (en) * 2014-12-31 2020-01-28 Applied Materials, Inc. One-piece process kit shield
KR20170128585A (ko) * 2015-03-20 2017-11-22 어플라이드 머티어리얼스, 인코포레이티드 고온 폴리머 본드를 이용하여 금속 베이스에 본딩 결합된 세라믹 정전 척
TWM534436U (en) * 2015-07-03 2016-12-21 Applied Materials Inc Frame, multi-piece under substrate cover frame and processing chamber
JP6976925B2 (ja) * 2015-07-03 2021-12-08 アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated 背高の堆積リングと堆積リングクランプとを有するプロセスキット
US10103012B2 (en) * 2015-09-11 2018-10-16 Applied Materials, Inc. One-piece process kit shield for reducing the impact of an electric field near the substrate
JP7225599B2 (ja) * 2018-08-10 2023-02-21 東京エレクトロン株式会社 成膜装置
US11961723B2 (en) * 2018-12-17 2024-04-16 Applied Materials, Inc. Process kit having tall deposition ring for PVD chamber
CN110670049A (zh) * 2019-11-19 2020-01-10 武汉新芯集成电路制造有限公司 一种气相沉积方法及装置
TW202129045A (zh) * 2019-12-05 2021-08-01 美商應用材料股份有限公司 多陰極沉積系統與方法
US11339466B2 (en) * 2020-03-20 2022-05-24 Applied Materials, Inc. Heated shield for physical vapor deposition chamber
CN111471976A (zh) * 2020-05-21 2020-07-31 中国科学院半导体研究所 衬底托
US11492697B2 (en) * 2020-06-22 2022-11-08 Applied Materials, Inc. Apparatus for improved anode-cathode ratio for rf chambers
US11600477B2 (en) * 2020-12-14 2023-03-07 Applied Materials, Inc. Gas injection process kit to eliminate arcing and improve uniform gas distribution for a PVD process
CN114717514B (zh) * 2021-01-06 2023-12-15 鑫天虹(厦门)科技有限公司 薄膜沉积设备
US20240186176A1 (en) * 2022-12-02 2024-06-06 Onto Innovation Inc. Stage actuator particle shield
CN117305814A (zh) * 2023-09-22 2023-12-29 上海中欣晶圆半导体科技有限公司 一种常压化学气相沉积用治具及其使用方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
CN1342213A (zh) * 1999-01-04 2002-03-27 集勒思公司 原子层沉积工艺的处理室
CN1412350A (zh) * 2001-10-11 2003-04-23 矽统科技股份有限公司 沉积制程的工作平台

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
JPH11229132A (ja) * 1998-02-19 1999-08-24 Toshiba Corp スパッタ成膜装置およびスパッタ成膜方法
AU2003205849A1 (en) * 2002-02-14 2003-09-04 Trikon Technologies Limited Plasma processing apparatus
US7670436B2 (en) * 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7579067B2 (en) * 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051122A (en) * 1997-08-21 2000-04-18 Applied Materials, Inc. Deposition shield assembly for a semiconductor wafer processing system
CN1342213A (zh) * 1999-01-04 2002-03-27 集勒思公司 原子层沉积工艺的处理室
CN1412350A (zh) * 2001-10-11 2003-04-23 矽统科技股份有限公司 沉积制程的工作平台

Also Published As

Publication number Publication date
KR101504085B1 (ko) 2015-03-19
WO2008079722A2 (en) 2008-07-03
SG177902A1 (en) 2012-02-28
JP5666133B2 (ja) 2015-02-12
KR20090094144A (ko) 2009-09-03
WO2008079722A3 (en) 2009-04-16
CN101563560A (zh) 2009-10-21
JP2010513722A (ja) 2010-04-30

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