CN101557904A - Cmp pad conditioners and associated methods - Google Patents
Cmp pad conditioners and associated methods Download PDFInfo
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- CN101557904A CN101557904A CNA2007800463355A CN200780046335A CN101557904A CN 101557904 A CN101557904 A CN 101557904A CN A2007800463355 A CNA2007800463355 A CN A2007800463355A CN 200780046335 A CN200780046335 A CN 200780046335A CN 101557904 A CN101557904 A CN 101557904A
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- polishing pad
- cutting element
- cmp polishing
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
A method of reducing a degree of compression of a CMP pad during conditioning of the CMP pad comprises engaging the CMP pad with at least one superhard cutting element, the cutting element including a cutting face, the cutting face being angled at 90 degrees or less relative to a finished surface of the CMP pad; and moving the CMP pad and the cutting element relative to one another in a direction resulting in removal of material from the CMP pad with the cutting face to thereby condition the CMP pad.
Description
Technical field
The present invention mainly is the tool and method that is used for removing from chemical mechanical polishing pads (CMP) (as polishing (smooth), polishing (polish), finishing (dress) etc.) material about a kind of.Therefore, chemistry, physics and material science are contained in the present invention.
Background technology
Polishing material is widely used in polishing, processing such as planing (planing), finishing or adjustment are handled, and for example, the annual at present cost of semiconductor industry surpasses 1,000,000,000 dollars and makes Silicon Wafer, and it must show very smooth and level and smooth surface.The technology of Silicon Wafer that becomes known for making level and smooth and flat surfaces is numerous, and wherein modal technology is exactly chemically mechanical polishing (CMP) method, and it comprises with polishing pad and using in conjunction with lapping liquid that the finishing of these CMP pads can utilize multiple instrument to finish.
Summary of the invention
Relevant for an embodiment, the invention provides a kind of method that when adjusting cmp polishing pad (CMP polishing pad), reduces the compression degree of this CMP polishing pad, it comprises: in conjunction with this CMP polishing pad and at least one superhard cutting element, this superhard cutting element comprises a cut surface, and this cut surface has the angle that is equal to or less than 90 degree with respect to the polished surface of this CMP polishing pad; And the direction of CMP polishing pad with respect to this cutting element moved, make this cut surface that material is removed from this CMP polishing pad, to adjust this CMP polishing pad.
About another aspect, the compression that the invention provides a kind of CMP of making polishing pad minimizes and removes from this CMP polishing pad the polishing pad adjuster of material, it comprises: a pedestal and plural cutting element, it is to extend out from this pedestal, and each cutting element has the angle that is equal to or less than 90 degree with respect to the polished surface of this CMP polishing pad; The face of this cutting element is directed, and makes the relatively moving of this polishing pad adjuster and CMP polishing pad, and order removes material from the CMP polishing pad with this cut surface, and adjusts this CMP polishing pad.
About another aspect of the present invention, a kind of method that when adjusting the CMP polishing pad, reduces the compression degree of this CMP polishing pad, it comprises: in conjunction with this CMP polishing pad and a plurality of by the formed superhard cutting element of polycrystalline diamond sheet, each cutting element comprises a cut surface, and this cut surface has the angle that is equal to or less than 90 degree with respect to the polished surface of this CMP polishing pad; And the direction of CMP polishing pad with respect to this cutting element moved, make this cut surface that material is removed from this CMP polishing pad, to adjust this CMP polishing pad.
Therefore, the above-mentioned various important characteristics of the present invention of having listed, therefore in ensuing detailed description, can further understand, and the contribution of doing in this area may have better understanding, and other features of the present invention will become more clear from ensuing detailed description and accompanying drawing and claim, also may learn when implementation is of the present invention.
Description of drawings
Fig. 1 is the stereogram about the polishing pad adjuster of one embodiment of the invention;
Fig. 2 is the vertical view about the polishing pad adjuster of one embodiment of the invention;
Fig. 3 A is the part view about the polishing pad of adjusting with existing method;
Fig. 3 B is the part view about the polishing pad of adjusting with one embodiment of the invention;
Fig. 3 C is the part view about the polishing pad of adjusting with another embodiment of the present invention;
Fig. 3 D relates to the part view of the polishing pad of another embodiment of the present invention adjustment;
Fig. 4 is the stereogram of part polishing pad adjuster that comprises the cutting element of the various geometries of tool;
Fig. 5 is the side sectional view about the polishing pad adjuster of one embodiment of the invention;
Fig. 6 A is the vertical view about the polishing pad adjuster of one embodiment of the invention;
Fig. 6 B is the cutaway view of the polishing pad adjuster of Fig. 6 A;
Fig. 7 is the microphoto about the part polishing pad adjuster of one embodiment of the invention.
Description of reference numerals: 12-polishing pad adjuster; 14,14d-pedestal; 16,16a～j-cutting element; 18,18a～c-cut surface; The 21-general closed planar; The 22-direction; 24,24a, 24c-extend the edge; 26,26c-cut edge.
The specific embodiment
Need be appreciated that appended graphic only be further to understand the present invention and as describing purposes, this is graphic to be not to draw or show according to size, therefore size, particle size and other aspects may and the situation of normally giving an exaggerated account, with clearer narration the present invention.Therefore, for making polishing pad adjuster of the present invention, show that deviation can appear in the drawings specific dimensions and aspect.
The present invention revealed and the narration before, it must be appreciated invention that following institute narrates and discloses and be not intended to limit shape of the present invention, making step or material, it can be equivalent shapes, making step and material that those skilled in the art can guess, and the purpose of using proper noun in the following explanation is at the narration specific embodiment, and also non-have any restriction to the present invention.
And before beginning to narrate, it should be noted that at this specification and the employed odd number kenel of claim wording thereof as " one ", " being somebody's turn to do " and " its ", it all only is antecedent, unless the well-known odd number that is designated as in context, not so the antecedent of these odd number kenels also comprises plural object, therefore, for instance, comprise one or more this elements as " a cutting element ".
Definition
It below is the definition of the proper noun that in explanation of the present invention and claim, occurred.
Whole slot sizes is dated especially except having, otherwise what here refer to all is the U.S. sieve hole dimension, and slot size all is appreciated that the average slot size of a certain amount of particle usually, even each particle in fact may be for changing in little distribution at specific slot size.
" (substantially) in fact " is meant step, characteristic, character, state, structure, project or result's complete, approaching scope or degree completely.Give one example arbitrarily, when two or more objects are separated with the consistent distance of one " in fact " between pointing out each other, can learn that then these two or more objects are separated with complete unmodifiable distance to each other, or have each other very near unmodifiable distance, and common people can't examine and know that it is respectively.And can under different situations, decide according to specific context from absolute certain admissible deviation fully.Yet, as a rule near fully as acquisition absolute or complete have identical total result fully.
Used " in fact " be also suitable on an equal basis when being used in negative connotation, to represent fully or near lacking step, characteristic, character, state, structure, project or result fully.Give one example arbitrarily, the pothole of one " not having (substantially free of) in fact " foreign substance can be does not have foreign substance fully, and perhaps being close to does not very much have foreign substance fully, and it influences meeting as lacking foreign substance fully.In other words, the pothole of one " not having in fact " foreign substance then in fact still comprises the foreign substance of small part as long as the result does not have measurable influence at hole.
" pedestal (base) " or " base material (substrate) " means the some of the polishing pad adjuster of carrying grinding-material, and this grinding-material can be attached to this pedestal or base material, maybe can extend out from this pedestal or base material.The used base material of the present invention can be Any shape, thickness or material, it is available be enough to allow a polishing pad adjuster reach the mode of the purpose desiring to reach carry grinding-material.Base material can be solid material, dusty material (becoming solid after the processing) or pliability material (flexible material).The example of typical substrates includes, but are not limited to metal, metal alloy, pottery, hard relatively polymer or other organic materials, glass and composition thereof.Moreover this base material can comprise and can help grinding-material attached to the material on this base material, includes, but are not limited to hard soldering alloy material, sintering aid etc.This base material and grinding and cutting element can form from identical materials in certain embodiments, and can form from an integration, single piece of material.
" grind profile (abrasive profile) " and can be understood defined shape of grinding-material or the space that is meant by means of being used for removing material from the CMP polishing pad.The example that grinds profile includes, but are not limited to rectangle, rectangle that an end is gradually thin, shape that the cross section is wedge shape and wedge shape etc.In certain embodiments, when material removes from the CMP polishing pad, and the CMP polishing pad is directed when being considered as a plane, and the grinding profile that relies on grinding fragment of the present invention to present is tangible.
" superhard (superhard) " is meant and has any crystallization or polycrystalline material or Mohs' hardness (Mohr ' shardness) about 8 or greater than 8 mixtures of material.In some aspects, Mohs' hardness can be equal to or greater than 9.5, this material includes, but are not limited to diamond, polycrystalline diamond (PCD), cubic boron nitride (cBN), polycrystal cubic boron nitride (PcBN), diamond dust (corundum) and sapphire, and the superhard material known to the technical field technical staff under other.Superhard material can combine with the present invention with various form (comprising particle, grit, film, layer structure, sheet, fragment etc.).In some cases, superhard material of the present invention is the form of adopting polycrystalline superhard material, as PCD and PcBN material.
" organic material (organic material) " is meant the semisolid or the compound amorphism mixture of solid of organic compound.Wherein, " organic material layer " and " organic material matrix " is used interchangeably, be meant the semisolid or the compound amorphism mixture of solid of an one deck or an organic compound, preferably, organic material is formed polymer of polymerisation or the co-polymer that is undertaken by one or more monomer.
" particle (particle) " and " grinding pebble (grit) " can exchange use.
" abrasive body (abrasive) " describes the various structures that can remove (as cutting, polish, scrape (scraping)) from the CMP polishing pad, and one grinds physical efficiency comprises on it or its inner block with many cut points, ridge, platform.It should be noted that this cut point, ridge, platform can be formed with many protuberances or recess and be encompassed in this block.Moreover an abrasive body can comprise a plurality of independently abrasive grains, its only have formation thereon or the surface a cut point, ridge or platform.One abrasive body also can comprise the compound body of determining, and as PCD sheet, fragment or blank (blank), can comprise grinding layer individually or comprise grinding layer jointly.
Here these a plurality of article, structural detail, component and/or material, can appear in general common the enumerating based on convenient, yet these are enumerated the solid memder that may be interpreted as in enumerating and are defined separately or individually, therefore if only according to member presenting in general groups, ignore its opposite expression, do not have solid memder to be interpreted as identical in fact reaching other members during this enumerates.
Data on concentration, quantity, grain diameter, volume and other numerical value is presented with the form of scope or is represented, and the use that need be appreciated that this range format is only based on convenience and succinct, therefore when explaining, should have suitable elasticity, not only be included in the numerical value that clearly shows in the scope with as restriction, also can comprise simultaneously all other numerical value and the underranges in number range, be quoted from clearly as each numerical value and underrange.
For example a number range " about 1 μ m is to about 5 μ m " should be construed to and comprise that not only about 1 μ m that clearly citation is come out arrives about 5 μ m, also be included in each numerical value and underrange in this specified scope simultaneously, therefore, be included in each numerical value in this number range, for example 2,3 and 4, or the underrange etc. of 1-3,2-4 and 3-5 etc. for example, also can be other 1,2,3,4 and 5.This principle of identity is applicable in the scope that citation one numerical value is only arranged, moreover no matter such illustrating is in the amplitude or this feature of a scope if should be able to being applied to.
The present invention
The invention provides the System and method for that is used to adjust the CMP polishing pad, adjust the quality of program, also reduce and relevant cost and discarded speed to improve the CMP polishing pad widely.Generally speaking, system and method for the present invention provides good cutting interface between polishing pad adjuster and CMP polishing pad, keeps cutting (for example adjusting) required pressure or the stress value of CMP polishing pad to be reduced to.In both there is something special, when finishing during this polishing pad, existing C MP polishing pad finishing or method of adjustment were to apply a large amount of to press down strength to polishing pad trimmer.
This strength that presses down causes the compression of pad material.When pad material is generally a soft relatively material (as polyamine base Ethyl formate (polyurethane)), this strength that presses down often causes this pad material more stiff, and more is difficult to cutting under the non-compressed state (non-compressed state) than being in.And this compressed pad material relatively is difficult to smooth-going and cutting equably, usually tear to big sheet causes forming rough surface at the CMP polishing pad, this rough surface can damage after the Silicon Wafer that will adjust by polishing pad.
Existing diamond polishing pad trimmer usually comprises " blunt (dull) " the diamond tip that can cut soft CMP polishing pad with negative angle, so-called negative angle is existing being used in reference to when the tip is passed through from polished surface, spends greater than 90 with respect to the angle on polishing (finished) surface that is applied to polishing pad.Therefore, this soft relatively polishing pad is bound to be compressed before being pierced through by this diamond tip, and causes serious deformation (elastic deformation and plastic deformation).Because the towing tension (dragging) and the tear edge (tearing) that are caused make the cutting path that maintains this polishing pad form the breach with different in width and degree of depth.
The present invention can allow a plurality of cutting tips pierce through soft polishing pad with the disruptiveness of minimum.When the CMP polishing pad trimmer became softer and softer, it is more important that feature of the present invention just becomes, to avoid the sharp IC (IC) of infringement when polishing (scraping damage as breaking-up (dishing), burn into).Some new polishing pads (as Room Haas ' Eco Vision) have a large amount of magnetic force at the contact-making surface with the IC wafer, so the cutting when polishing pad finishing must be clean and efficient.
The notion that is described in Fig. 3 is to show that existing cutting element (16b) is incorporated into a CMP polishing pad pedestal (14).At first, existing cutting element (16b) comprises a cut surface (18b), its with respect to the polished surface that is applied to this polishing pad have the angle [alpha] 3 greater than 90 degree (when this cutting element when this polished surface removes, be meant negative cutting angle sometimes with respect to this polished surface that is applied to polishing pad).When this cutting element (16b) is when being pressed down to this polishing pad, this pad material can produce moulding deformation, and the harder strength that is applied to pad material with response that becomes, therefore, cut this pad material and become more difficult, the product that causes being cut produces a coarse and uneven surfaces on this polishing pad.
The present invention relies on the strength that presses down that reduces between this polishing pad adjuster and the CMP polishing pad to handle this problem.As a result, the adjustment surface ratio that stays of this CMP polishing pad is used the more level and smooth and smooth of existing method gained.
As shown in the figure, in one embodiment of this invention, provide a polishing pad adjuster (12) and remove material, and allow the compression of CMP polishing pad minimize from a CMP polishing pad pedestal (14) from Fig. 3 B to Fig. 3 D.This adjuster comprises a pedestal (14) and the plural superhard cutting element (16) that extends out from this base material, best is from Fig. 3 B, this cutting element respectively has a cut surface (18), its with respect to the polished surface that is applied to the CMP polishing pad have the angles that are equal to or less than 90 degree (as, this cut surface with respect to this polished surface move-be the cutting angle of making a comment or criticism sometimes).The cut surface (18) of this cutting element (16) can be directed, so that relatively moving of this polishing pad adjuster (in the direction of Fig. 3 B indication (22)) and this CMP polishing pad make material clever land to remove from the CMP polishing pad of tool cut surface, to adjust this CMP polishing pad.
Rely on to adjust angle that this cut surface (18) is applied to the polished surface of polishing pad pedestal (14) relatively and be 90 degree or less than 90 degree, this finishing program can clever be landed and is struck off one deck pad material from this polishing pad, the surface that is applied to polishing pad of gained just can be used in the CMP program safely, and can not destroy expensive Silicon Wafer.Polishing pad adjuster of the present invention can be used in even and very shallowly and strikes off the skim material from this polishing pad, and stay clean, a level and smooth and surface that evenly polish on polishing pad, this technology can be used for removing the gloss oil thin layer on the surface that can be formed in the CMP polishing pad.
Cut surface shown in the orientation diagram (18) is in an angle [alpha] 1, and it is the angle with respect to about 90 degree of the polished surface that is used for this CMP polishing pad.The cut surface of orientation diagram 3D (18a) is in an angle [alpha] 2, and it is with respect to the angle of the polished surface that is applied to this CMP polishing pad less than 90 degree, is approximately 60 degree.This cut surface is oriented in various angles, and in one embodiment, can be with respect to the polished surface that is used for this CMP polishing pad from extremely about 90 degree of about 45 degree.The minimizing of finding angle can produce sharp-pointed cutting interface between this cutting element and this polishing pad.
Please referring to the cutting element (16a) of Fig. 3 D and the cutting element that is presented at the microphoto of Fig. 7, this cutting element can comprise a distal portion (as the base material part farthest from this polishing pad adjuster) and a close end (as from the nearest part of this base material).The cross section of this close end of section ratio of this distal portion is wide, in other words, in some embodiments of the invention, this cutting element outwards (in one or more direction) is horn-like towards bottommost (as the part that combines with this polishing pad), in this way, the angle of this cut surface can be reduced to below 90 degree.
From an embodiment to another embodiment multiple different cut surface angle can be arranged.In an aspect, this cutting angle is about 90 degree; In another aspect, this cutting angle can be spent greater than 90 a little, and each numerical value (as the 90-92 degree, 93-97 degree etc.) that is 95 degree, 100 degree and a scope and is comprised, and the numerical value that increases is to drop between these numerical value; Again in another aspect, this cutting angle can be less than about 90 degree, less than about 80 degree, less than about 75 degree, less than about 70 degree, less than about 65 degree, less than about 60 degree and a scope and each numerical value of being comprised (as 60 to 90 degree) thereof, and the numerical value that increases is to drop between these numerical value.
The cutting element (16a) that is presented at Fig. 3 D comprises that one continues sharpened cut surface (18a) outwardly, it must be appreciated that this cutting element can extend (with respect to the direction that shows in the drawings) segment distance down, is horn-like up to outwardly.Similarly, example as shown in Figure 7, the inclined-plane of a bending or arch can provide as cut surface.
Fig. 3 B and Fig. 3 D describe an aspect of the present invention, and this cutting element comprises that (24,24a), it is parallel to the polished surface of this CMP polishing pad in fact at an extension edge.Yet, in another embodiment, as be illustrated in the example of Fig. 3 C, this cutting element (16c) can comprise that one extends edge (24c), it provides a raised zones between this CMP polished surface and cutting element, in this case, the sharpness of the cut edge of blade (26c) can increase, and does not need to make this cut surface (18c) gradient or make and be tapered.
In addition, as the cutting element (16) that is presented at Fig. 1 is dentation usually, and distinctly becomes standing shape, and then in some embodiments of the invention, this cutting element can comprise cutting blade.This embodiment is presented at Fig. 2 as example, and wherein cutting element (16d) or blade are the faces that is arranged across at pedestal (14d).When this cutting blade was not particular about so, then this cutting blade had a cutting length " L ", and it is the twice of a cutting height (Fig. 5 " d ") at least.This cutting blade helps being used in and removes most pad material when operating each time.This cutting blade also can comprise along the length of this cutting blade different and different cutting angles is arranged, and can comprise and forming thereon or and the dentalation that connects.Serration and ridge etc. also can be formed in going up of cutting blade or in, or combine, to promote the cutting power of this tusk or blade with this cutting blade.
Cutting element of the present invention can combine with pedestal (14) in various mode.In one embodiment, this cutting element and this pedestal are that material piece (as polycrystalline diamond sheet and polycrystal cubic boron nitride sheet etc.) from whole piece is formed.In another aspect, this cutting element be with bonding, the welding or other modes be connected with this pedestal.
Also can use the mode of various contrary casting (reverse casting) that this cutting element is bonded to this pedestal.For example, a wall can be arranged on the working face of an interim base material, arrange this cutting element so that at least a portion of each cutting element can at least partly be embedded in this wall.In an aspect, this cutting element can rely on various theories of mechanics or mode push, and the tip that this must this cutting element can contact with this interim base material.In this way, this interim base material can be determined the structure (as profile) on the final plane of polishing pad trimmer/cutting tool.Therefore, this interim base material can comprise combinations such as various angles and profile, plane, gradient, ladder according to the profile of polishing pad trimmer/cutting tool of wanting.
Optionally apply sticker at this interim base material and/or this wall and/or this cutting element, suitably arranging and temporary transient connection to help.Be used for any should the surface sticker can be any have in affiliated technical field know the known sticker of the knowledgeable usually, for example be not restricted to polyvinyl alcohol (PVA) resin, polyvinyl butyral resin (PVB) resin, polyethylene glycol (PEG) resin, Parafilm, phenolic resins, paraffin wax emulsion, acrylic resin or its composition.In an aspect, this sticker is the atomizing acrylate glue.
This wall can by any soft, deformable material is made, and has consistent relatively thickness, and can according to processing procedure, after purposes, the composition of instrument predecessor special demand such as consider and select.The example of Available Material includes, but are not limited to rubber, plastic cement, paraffin, graphite, clay, adhesive tape, graphite sheet/coiled material (grafoil), metal, powder and combination thereof.In an aspect, this wall can be rolling (the rolled sheet) that comprises metal or other powder or bonding agent (binder).For example, this metal can be powder of stainless steel and polyethylene glycol bonding agent.Can use the various bonding agents of knowing usually known to the knowledgeable that in affiliated technical field, have, for example but be not restricted to polyvinyl alcohol (PVA) resin, polyvinyl butyral resin (PVB) resin, polyethylene glycol (PEG) resin, Parafilm, phenolic resins, paraffin wax emulsion, acrylic resin or its composition.
At least partly unhardened resin material can be applied to the position of this wall with respect to this interim base material, can use a mould (as stainless steel or other materials) to maintain this unhardened resin material in processing procedure.Can form a resin bed in sclerosis during this resin material, with the fixing cutting element of at least a portion.Optionally a permanent tool substrate is connected to this resin bed, is used to repair a CMP polishing pad or other purposes to help it.In an aspect, this permanent base material can be connected to this resin bed by a suitable sticker, rely on will this permanent base material and resin bed between the contact-making surface roughening to help connection.In an aspect, this permanent base material can be in conjunction with this resin material, and is connected to this resin bed because of sclerosis.Once this hardening of resin, then this mould and this interim base material just remove from this CMP polishing pad trimmer in regular turn, in addition, this wall can remove from this resin bed, it is to finish in the known mode of person with usual knowledge in their respective areas by means of any, for example eliminate (peeling), mill stone roller (grinding), blast cleaning (sandblasting), strike off (scraping), friction (rubbing), abrasion (abrasion) etc., so this cutting element is to rely on the amount that is covered or hide by this wall from the outstanding ridge of this resin.In addition, the arrangement of this cutting element can rely on the resin relative fixed, and therefore, this cutting element can be placed with various kenels, and therefore various kenels can be createed in the surface of a combination tool.
This cutting element can be formed in various mode.As mentioned above, an embodiment comprises by polycrystalline diamond sheet or polycrystal cubic boron nitride sheet and forms cutting element, and each cutting element can form and be bonded to this pedestal from this laminated structure, or this pedestal and cutting element can form from the laminated structure of whole piece.
In another aspect, this cutting element can rely on the aluminium sheet make sintering to have from it to be extended with the basic configuration of cutting element and to form.One class is bored carbon (DLC) layer can be coated on the surface that produces pattern; Chemical vapour deposition (CVD) diamond CVDD (Chemical Vapor Deposition Diamond) can be coated on the patterned surfaces of pottery; In addition, can use carborundum (SiC) plate (silicon) of a sintering with the fusion that is used to infiltrate hole.In another embodiment, the also silicon nitride of available sintering (Si3N4).
In addition, also available other materials combines separately or with other material and is used as cutting element, and it all can be included in this this category.For example, this cutting element comprises or is made up of following material in fact: pottery or other diamonds or cubic boron nitride film, comprise those via the film that chemical vapour deposition technique (CVD) is deposited, can be used for comprising aluminium oxide (alumina), aluminium carbide (aluminum carbide), silica (silica), carborundum (silicon carbide), silicon nitride (siliconnitride), zirconia (zirconia), zirconium carbide (zirconium carbide) and composition thereof as the ceramic unrestriced example of cutting element.In one embodiment, cutting element is sintering group, the group of partially sintering and/or is bonded to the material layer of the pedestal of this instrument predecessor according to having the method for knowing usually known to the knowledgeable in the affiliated technical field.In an aspect, this cutting element can comprise the mixture of plural material (can select to comprise the sticker particle), all mix thing (homogeneous) or other.In another aspect, this cutting element comprises plural material layer.In a nonrestrictive example, this cutting element can comprise the pottery that is coated by the CVD diamond.
As shown in Figure 5, each cutting element (16) comprises one or a plurality of cut edge (26) that is arranged in general closed planar (21).Therefore, each cutting element can comprise four cut edges, and it respectively is used for material is cut or excludes from work package.Rely on and contain a plurality of cutting elements that respectively have plural cut edge, then help length overall in the cut edge that increases each cutting element.In addition, because each cutting element has identical in fact height with respect to the working face of this pedestal, therefore all align and be arranged in same general closed planar in all cut edges of all cutting elements, rely on each cutting element is arranged in general closed planar, this cutter sweep is self-aligned (self-aligned) at first in fact, to strike off the higher zone of this work package, then continue cutting up to " height " point of cutting down all working spare, and stay a level and smooth and smooth work package surface.
Cutter sweep of the present invention can effectively be repaired the CMP polishing pad except finding, also can be used for many other application, comprise being used for planishing in fact friable material, as Silicon Wafer, sheet glass, metal, rely on Silicon Wafer that planing (planarization) recycling used, LCD glass, LED base material, sic wafer, quartz wafer, silicon nitride, zirconia etc.In existing Silicon Wafer process technology, polished wafer is carried by the carrier that is positioned a polishing pad (carrier) usually, and this polishing pad is to be connected on the rotation platform.When lapping liquid is applied to this polishing pad, and pressure is when being applied to this carrier, this wafer can rely on this platform and relatively moving of this carrier and polished, and therefore, Silicon Wafer can rely on very tiny abrasive to be ground rolling (grind) or polishing in fact to form level and smooth relatively surface.
Yet when the polishing of Silicon Wafer has some progress, polishing material (as Silicon Wafer) usually occurs tearing or dig the cutter one piece material from body of material, it is poorer than the polish results of wanting to cause, this is because (partly cause at least) polishing or polish process are used the fact of the grinding-material (these sharp point usually are not to flush mutually) with utmost point sharp point, so that the pressure localization allows abrasive that material is removed from work package.
Opposite with existing polishing or polishing program, the present invention uses one or more cutting elements with cut edge of sharp angles, with from a work package cutting material, polishes or flatten the surface of this work package.Usually when a cutting acted on the material, then Qie Ge zone can be out of shape plasticly or break in cracked mode.If this plastic ground deformation ratio break the expansion and speed slow, then this material is frangible as can be known; Anti-then is ductile deformable body.Yet, when in high-pressure situations, break expand and speed can be suppressed, in the case, a friable material (as silicon) can have more extension characteristics, as soft metal.When sharp-pointed cut edge of the present invention is pressed into frangible silicon surperficial, the area of first make contact is minimum (as several rice how), result, very high (as tens handkerchiefs (GPa)) that pressure becomes, be suppressed owing to break, this sharp-pointed diamond edge can penetrate silicon by deformable ground.As a result, external energy can be passed to the very silicon of small size constantly, to bear this ductility cutting (ductile cutting); In other words, this sharp-pointed cut edge can be with a kind of unprecedented mode silicon that strikes off or planish.
When using PCD or PcBN sheet in the present invention, made cutting element is generally superhard, make this cutting element when being pressed into a wafer, almost can't be out of shape, and the hardness measuring method of energy concentration normally, energy as every volume, PCB of the present invention or PcBN sheet can be concentrated the very little volume of energy to one and can not break, and these materials also can rely on very sharp-pointed cutting element and keep, and this is because it can remain on an edge in several atoms.
When the ductility of silicon is maintained by means of pressing on a very little volume, usually can relatively possess the little radius that penetrates, its be demonstration at Fig. 5, wherein the degree of depth of this cutting element (16) (or height) is represented with " d " letter usually, and is about 0.1 millimeter (mm).In addition, the shape of this cut edge must remain relatively sharp-pointed; In some cases, its radius is about 2 rice (nm) how.In order to meet this two characteristics, the material of cut edge of the present invention is hard, is enough to bear the distortion in cutting or planing step, and with the method, the sharpness of this cutting element and hardness can be guaranteed the ductility of this workpiece as can be known.
Each cutting element (16) comprises the surface at a smooth in fact extension edge (24), and it can define the work package contact area.The work package contact area of all cutting elements combination comprise from this pedestal gross area approximately 5% to 20% of this pedestal gross area approximately.Therefore, in an aspect of the present invention, if polishing pad trimmer has the diameter of about 100mm, then the contact area of this cutting element combination is about 10% of this pedestal gross area, and the whole contact area of all cutting elements is about 7850 square millimeters (mm2).The edge of each cutting element and the ratio of area can be about 4/mm, make total edge length be about 31400mm.
Cutter sweep of the present invention can be used to wet system or dry systems.In dry systems was used, this cutting element can be used for from work package cutting or planing wafer, and does not use liquid lapping liquid.In general application, this cutter sweep be arranged on one be connected in one the rotation cushion block supporting pad.This work package (as a Silicon Wafer or CMP polishing pad) can be connected in a vacuum cushion block, to make this work package rotation, the rotation of this rotation cushion block and this vacuum cushion block can be clockwise or counterclockwise direction rotation, to remove material from this work package, change the rotation of an element and rely on respect to another element, then in the single rotation of this work package, can remove more or less material, for example, if this work package is rotate in the same direction (but with different speed) with this cutting element, then remove less material towards the different directions rotation than them.
In this typical application, impose lapping liquid and help on the surface of this work package of planing, this lapping liquid can be aqueous polishing liquid or chemical grinding liquid.Under the situation of using chemical grinding liquid, chemical substance wherein can be selected to provide cooling or with the surface reaction of work package with softening this work package, and provide more efficient cutting process, and the wear rate of finding Silicon Wafer can increase widely because the surface of this Silicon Wafer is softening, for example, comprise oxidant (as hydrogen peroxide (H2O2)) chemical grinding liquid and can be used for forming full-bodied relatively oxide, and tend in " adhesion " on this crystal column surface, in this situation, PCD cutter sweep of the present invention does not need cutting crystal wafer, but will strike off this oxide from the surface of wafer.As a result, the sharpness of this cut edge can become unimportant; In addition, the life-span of this cutter sweep also can rely on uses lapping liquid and increase widely, and for example, a PCD scaler uses with lapping liquid can prolong 1000 times access times than PCD cutter.
Fig. 4 describe the various cutting elements relevant with one embodiment of the invention (16g, 16h, 16j).In an aspect of the present invention, this cutting element makes (size) and plastotype (shape) becomes to have rectangle cross section, oval cross section, circular cross-section, triangle, polygon, pyramid cross section etc.Various made and the cutting element of plastotype can be by means of various cuttings in the position of the groove of this PCD or PcBN sheet and width and forming.This cutting element also can be formed on the following (not shown) on the surface of PCD or PcBN sheet, has for example circular or polygonal embedding groove (inset cavities) so that this cutting element comprises.
Fig. 6 A and Fig. 6 B describe another embodiment of the present invention, its expression be formed on a PCD pedestal plural cutting element (16e, 16f).From Fig. 6 A as can be known, it is integrally formed and have a cutting element of different size and configuration from superhard polycrystalline material that the present invention can provide, for example shown at embodiment, this bigger cutting element (16e) can be used for cutting, planing or trim elements, and mainly is as " end (stopping) " element than small components (16f); In other words, this bigger cutting element can be further from the pedestal of this PCD extend with further or cutting more in depth just with the polishing pad (this figure does not show) of this cutting element finishing.
When this big cutting element (16e) extend into work package in enough far away or enough when dark, the surface (bottom out) that this less cutting element can arrive the bottom of work package with restriction greatly cutting element (16e) more go deep in this work package.Reaching this notion for helping, can will should make more sharply by big cutting element than this less cutting element, for example, this big cutting element can terminate in a tip (similar to the cutting element shown in Fig. 3 C), and this less cutting element can terminate in a smooth plane (similar to the cutting element shown in Fig. 3 B).With the method, should be than cutting element can be than this work package of the easier cutting of this less cutting element, so that this less cutting element can be used as the element of the degree of depth " termination " greatly.With the method, the present invention can very accurately control the degree of depth of this cutting element incision work package (as the CMP polishing pad that is trimmed).
In addition, when cutting element of the present invention can be formed by the polycrystalline superhard material of whole piece, the unnecessary part of the available polycrystalline superhard material of the following maintenance of the cutting element on the pedestal of this cutter sweep pedestal of this cutter sweep (or form) then.Therefore, in an aspect of the present invention, in case cutting element is rust or be compromised in use, then this cutting element can rely on a thin ultra hard material layer that removes whole of this cutting element and be sharpened (sharpen), and form with originally at the same figure that this device surface produced.As long as there are enough polycrystalline materials to remain on the following of this cutting element, further to fine away to allow this cutting element, therefore cutter sweep of the present invention can relatively be easy to fine away or repair.
Example
Following example narration embodiments of the invention, therefore these examples can not be considered as restriction of the present invention, but only suitably teaching how implement the System and method for of the best of the present invention according to this experimental data, therefore, the representative number of System and method for is disclosed in this.
Example 1:
One has the polycrystalline diamond of sintering and the PCD sheet that combines with cemented tungsten carbide (cemented tungsten carbide) base material is as being used to discharge processing method (Electrical Discharge Machining, EDM) blank.This circular disc has diameter (as the product of Adico), 52mm (as the product of Adico), 60mm (as the product of Diamond Innovations), 74mm (as the product of Element Six) or the 100mm (as the product of Tomei Dia) of 34mm.The thickness that this typical PCD layer is the 400-600 micron; Gross thickness (comprising the tungsten carbide base material) is 1.6mm or 3.2mm as standard material.
This PCD surface is polished subtly, to have a Ra value less than about 1 micron (micron), this blank is to form zigzag pattern with line cutting EDM (wire-EDM) cutting, and the distance on top to summit is about 400 microns, and summit to the degree of depth of concave point is about 100 microns, its tip angle is 60,70,60,90 or 100 degree (with respect to the polished surface that is applied to polishing pad), and it is difference because computation blocks the difference of PCD blank.This zigzag pattern produces symmetrical profile (profile) on by the blade of cutting perpendicularly, the thickness of this blade (as cutting element) can be less than about 1mm.If used line very thin (as 150 microns), then the loss of otch is with regard to energy minimization, and makes the number of blades maximization of each circular disc.
This blade can be followed with the ultrasonic water-bath with micron order diamond suspension and clean, and removing the fragment of all suspensions, and the hot soarfing with microfissure (micro crack) and inverse conversion diamond (back converted diamond) loses superficial layer.
This blade (as cutting element) can then be fixed on a female mold tool, with to its all cutting tips in 20 microns.Then, this mould with firm this blade, presents the radial pattern pattern to be arranged at the about 100mm of diameter on the disk of the about 7mm of thickness with the epoxy resin casting.This blade can be provided with perpendicular to the cut edge of this die surface or a gradient of controlling is arranged.
The result, this cutting angle can be adjusted and reach best groove on this polishing pad, also be controlled at this epoxy resin base material on cutting tip protrusion (about 100 microns), this protrusion can be arranged and make the increase of cutting tip mild, since so the control cutting expand and quantity, this polishing pad can be cleared up, and has the notch cuttype surface roughness, to reach best polishing effect.
For example, high surface roughness can be removed the projecting point of copper deposition on the wafer apace, and it is smooth to flatten rapidly, the next stepped surfaces roughness of order polishing is so that copper is thinner, at last, the relatively flat that this surface roughness can become is polished (buff) very thin copper layer and is removed barrier layer (as tantalum nitride (TaN)).The CMP method needs fast polishing, slowly polishes and polishes with three successive stages at present.Polishing pad adjuster of the present utility model can (optionally) with stages operating of unification, and save cost of manufacture widely and promote the productivity ratio of product.
In case above-mentioned most advanced and sophisticated rust, and make that reduction removes rate when wafer polishing, then employed tip can be recovered simply by means of being dissolved in the solvent or burning the epoxy resin base material, this blade can then be reset to has another zigzag side to make new polishing pad adjuster, and this can reduce manufacturing cost widely.Existing polishing pad adjuster is because of picking out the tip of wearing and tearing from sharp-pointed tip and being used seldom again.
Example 2:
Use and similar methods described in the example 1, different is in replacing PCD with tungsten carbide blank.This tungsten carbide blank comprises a spot of cobalt (as 6wt%), and straight blade is arranged on a fixture, and is placed on a CVD reactor with mixture of methane (1%) and hydrogen, the mixture energy thermal decomposition of this tool methane and hydrogen and be separated into carbon and atomic hydrogen.This CVDD that is coated with tungsten carbide will be deposited on diamond grains, rely on be controlled to that cuclear density, sparse atomic nucleus distribute, bigger particle, higher protrusion and farther separation rate come at interval sharp-pointed cutting tip.The scope of this diamond grains can be from how rice crystallization (as straight edge) is to the particle greater than 10 microns.Low cobalt content can help diamond to avoid being preserved because of the back reaction that its catalyst ability is produced in tungsten carbide.
Example 3:
Use and example 2 described similar steps, different being in this blade is to cut into slices from the silicon of doped silicon carbide blank to form.
Example 4:
Use and example 3 described similar steps, different being in this blade is to cut into slices from the micron-sized granular silicon nitride of a sintering to form.
Example 5:
Use and example 2 described similar steps, zirconia (ZrO2) and the made stock of titanium are strengthened in different being in also using by having yttrium, to be coated with buffer as the used interface of diamond film deposition.
Need be appreciated that; more than this arrangement all only is in the application of describing principle of the present invention; many changes and different arrangement also can be under the situation that does not break away from the spirit and scope of the present invention be come out in that those skilled in the art are contemplated, and protection domain is also contained above-mentioned change and arrangement.Therefore, be the most practical above-mentioned and most preferred embodiment although the present invention is described by specific and detailed description ground, can under the situation that does not depart from principle of the present invention and viewpoint, do many as changes such as size, material, shape, pattern, function, method of operating, assembling and uses those skilled in the art.
Claims (25)
1. a method that reduces the compression degree of this CMP polishing pad when adjusting cmp polishing pad (CMP polishing pad) is characterized in that, comprising:
In conjunction with this CMP polishing pad and at least one superhard cutting element, this superhard cutting element comprises a cut surface, and this cut surface has the angle that is equal to or less than 90 degree with respect to the polished surface of this CMP polishing pad; And
CMP polishing pad and cutting element are moved with direction respect to one another, make this cut surface that material is removed from this CMP polishing pad, to adjust this CMP polishing pad.
2. method according to claim 1 is characterized in that: this cut surface is towards the angle with respect to about 90 degree of the polished surface of this CMP polishing pad.
3. method according to claim 1 is characterized in that: this cut surface is towards with respect to the polished surface of this CMP polishing pad angles less than 90 degree.
4. method according to claim 1 is characterized in that: this cut surface towards with respect to the polished surface of this CMP polishing pad greater than 45 degree and less than the angles of 90 degree.
5. method according to claim 1, it is characterized in that: this cutting element comprises a distal portion and a close end, from its pedestal that extends, and wherein this distal portion has the cross section wideer than this close end to this close end than more close this cutting element that allows of this distal portion.
6. method according to claim 1 is characterized in that: this cutting element has a cross section, and extends from a pedestal, and wherein the cross section of this cutting element is included in the narrow portion between this cutting element end.
7. method according to claim 1 is characterized in that: comprise in conjunction with this CMP polishing pad and plural superhard cutting element in conjunction with this CMP polishing pad.
8. method according to claim 7 is characterized in that: this superhard cutting element is to form from a polycrystalline diamond sheet.
9. method according to claim 7 is characterized in that: plural cutting element is formed by a polycrystal cubic boron nitride sheet.
10. method according to claim 1 is characterized in that: this cutting element comprises that one extends the edge, and it has an angle to provide a raised zones between the polished surface of this CMP polishing pad and cutting element.
11. method according to claim 1 is characterized in that: this cutting element comprises parallel with this a CMP polishing pad polished surface in fact extension edge.
12. method according to claim 1 is characterized in that: this cutting element comprises a cutting blade, and it has the Cutting Length than the highly big twice of a cutting.
13. a compression that makes the CMP polishing pad minimizes and remove the polishing pad adjuster of material from this CMP polishing pad, it is characterized in that, comprising:
One pedestal; And
The superhard cutting element of plural number, it is to extend out from this pedestal, and each cutting element has a cut surface, and this cut surface has the angle that is equal to or less than 90 degree with respect to the polished surface of this CMP polishing pad;
The face of this cutting element is directed, and makes the relatively moving of this polishing pad adjuster and CMP polishing pad, and order removes material from the CMP polishing pad with this cut surface, and adjusts this CMP polishing pad.
14. polishing pad adjuster according to claim 13 is characterized in that: each cut surface is the angle that is oriented with respect to about 90 degree of the polished surface of this CMP polishing pad.
15. polishing pad adjuster according to claim 13 is characterized in that: each cut surface is to be oriented with respect to the polished surface of this CMP polishing pad angles less than 90 degree.
16. polishing pad adjuster according to claim 13 is characterized in that: each cut surface is to be oriented with respect to the polished surface of this CMP polishing pad greater than 45 degree and less than the angles of 90 degree.
17. polishing pad adjuster according to claim 13, it is characterized in that: each cutting element comprises a distal portion and a close end, from its pedestal that extends, and wherein this distal portion has the cross section wideer than this close end to this close end than more close this cutting element that allows of this distal portion.
18. polishing pad adjuster according to claim 13 is characterized in that: each cutting element has a cross section, and extends from a pedestal, wherein the cross section of this cutting element is included in the narrow portion between this cutting element end.
19. polishing pad adjuster according to claim 13 is characterized in that: this superhard cutting element is that the polycrystalline diamond sheet by whole piece is formed.
20. polishing pad adjuster according to claim 13 is characterized in that: plural cutting element is formed by a polycrystal cubic boron nitride sheet.
21. polishing pad adjuster according to claim 13 is characterized in that: each cutting element comprises that one extends the edge, and it has an angle to provide a raised zones between this CMP polishing pad polished surface and cutting element.
22. polishing pad adjuster according to claim 13 is characterized in that: this cutting element comprises parallel with this a CMP polishing pad polished surface in fact extension edge.
23. polishing pad adjuster according to claim 13 is characterized in that: this cutting element comprises a cutting blade, it has the Cutting Length than the highly big twice of a cutting.
24. a method that reduces the compression degree of this CMP polishing pad when adjusting the CMP polishing pad is characterized in that, comprising:
In conjunction with this CMP polishing pad and a plurality of each cutting element comprises a cut surface by the formed superhard cutting element of polycrystalline diamond sheet, this cut surface has the angles that are equal to or less than 90 degree with respect to the polished surface of this CMP polishing pad; And
CMP polishing pad and cutting element are moved with direction respect to one another, make this cut surface that material is removed from this CMP polishing pad, to adjust this CMP polishing pad.
25. method according to claim 24 is characterized in that: this cutting element is extended by a pedestal, and wherein this pedestal and this cutting element are that polycrystalline diamond sheet by whole piece is formed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US86620206P | 2006-11-16 | 2006-11-16 | |
| US60/866,202 | 2006-11-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101557904A true CN101557904A (en) | 2009-10-14 |
Family
ID=39536874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007800463355A Pending CN101557904A (en) | 2006-11-16 | 2007-11-16 | Cmp pad conditioners and associated methods |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20080153398A1 (en) |
| CN (1) | CN101557904A (en) |
| TW (1) | TWI356449B (en) |
| WO (1) | WO2008076199A2 (en) |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103688343A (en) * | 2011-03-07 | 2014-03-26 | 恩特格里公司 | Chemical mechanical planarization pad conditioner |
| CN103688343B (en) * | 2011-03-07 | 2016-09-07 | 恩特格里公司 | Chemical mechanical polishing dresser |
| CN104755236A (en) * | 2012-10-19 | 2015-07-01 | 陶氏环球技术有限公司 | Apparatus and method for cutting formable and/or collapsible materials |
| CN106463379A (en) * | 2014-03-21 | 2017-02-22 | 恩特格里斯公司 | Chemical mechanical planarization pad conditioner with elongated cutting edges |
| CN106078517A (en) * | 2016-08-03 | 2016-11-09 | 咏巨科技有限公司 | A kind of trimming device for polishing cushion |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008076199A3 (en) | 2008-08-21 |
| TWI356449B (en) | 2012-01-11 |
| US20080153398A1 (en) | 2008-06-26 |
| WO2008076199A2 (en) | 2008-06-26 |
| TW200837823A (en) | 2008-09-16 |
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Application publication date: 20091014 |