CN101550530A - Prepare iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition method - Google Patents
Prepare iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition method Download PDFInfo
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- CN101550530A CN101550530A CNA2009100813985A CN200910081398A CN101550530A CN 101550530 A CN101550530 A CN 101550530A CN A2009100813985 A CNA2009100813985 A CN A2009100813985A CN 200910081398 A CN200910081398 A CN 200910081398A CN 101550530 A CN101550530 A CN 101550530A
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- 239000000463 material Substances 0.000 title claims abstract description 41
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 29
- 238000000151 deposition Methods 0.000 title claims abstract description 17
- 230000000694 effects Effects 0.000 title claims abstract description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 title abstract description 29
- 239000012528 membrane Substances 0.000 title abstract 7
- 229910052742 iron Inorganic materials 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 23
- 238000004549 pulsed laser deposition Methods 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 19
- 238000002360 preparation method Methods 0.000 abstract description 13
- 230000007613 environmental effect Effects 0.000 abstract description 5
- 239000002360 explosive Substances 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 abstract description 3
- 231100000614 poison Toxicity 0.000 abstract description 3
- 239000003440 toxic substance Substances 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000007096 poisonous effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QMQXDJATSGGYDR-UHFFFAOYSA-N methylidyneiron Chemical compound [C].[Fe] QMQXDJATSGGYDR-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The present invention pertains to the technical field of optical sensors and photoelectric device material and prepares iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition (PLD) method. Put Si (100) substrate, high-purity C target and Fe target into the vacuum coating chamber of PLD equipment, vacuumize till 8*10<-4> Pa, heat Si substrate to 350 DEG C-450 DEG C, bombard Fe target with KrF laser in pulse, deposit Fe-layer membrane, bombard high-purity C target with KrF laser in pulse, deposit C-layer membrane, hold temperature and anneal 10min-30min after deposition, let Fe atoms disperse into C layer, naturally cool to room temperature to obtain iron doped carbon membrane material. The PLD method for preparation of iron doped carbon membrane is simple and features stable process, high controllability and very high preparation efficiency. Moreover, during membrane deposition, the use of inflammable, explosive and toxic substances is avoided. This suits the requirement of environmental protection.
Description
Technical field
The invention belongs to optical pickocff and photoelectric device material technology field, particularly the pulsed laser deposition legal system is equipped with the iron-doped carbon thin-film material of white light photoconductive effect.
Background technology
Photoconductive material receives much concern because of its application at aspects such as optical detection, sensings.As far back as 20th century the eighties, people such as the strong Ji of Gu Gang have just invented the Se photo-conductive film CN85104072B of doping Te.Silicon based opto-electronics is led material and is also studied widely.For fear of using hypertoxic gases such as phosphine, borine, arsine in process of production, people such as Wu Zongyan have invented and have used hydrogen, and helium or argon gas come the method CN 85100512 of doped amorphous silicon film as the carrier gas of III-V family simple substance or compound.But in Wu's method, toxic gases such as silane have still been used.Along with people are more and more higher to the environmental requirement of material and technology, some novel photoconductive materials arise at the historic moment.People such as Zhang Jingwen have invented a kind of method CN101055903 for preparing the zno-based photoconductive material.The ZnO film of preparing is specially adapted to ultraviolet detector because of its greater band gap.People such as Jin Kexin have prepared calcium titanium ore manganose oxide hetero-junction thin-film CN1753190.This film is under the 80K temperature, and before and after laser radiation, electricity is led variation can reach 16.6 times.
Advantages such as the amorphous carbon film material is various because of its preparation method, and material cheaply is easy to get, and is nontoxic, and the band gap adjustability is big become the strong candidate of photoconductive material.Namita Dutta Gupta, C.Longeaud, P.Chaudhuri, A.Bhaduri, S.Vignoli, Journal of Non-Crystalline Solids, 2006,352:1307-1309 has reported the method for preparing the amorphous carbon film photoconductive material with plasma enhanced chemical vapor deposition method (PECVD).This film is very faint to the response of visible light, but very sensitive to the response of UV-light, is the potential ultraviolet light detector.Document Hare Ram Aryal, Sudip Adhikari, Dilip ChandraGhimire, Golap Kalita, Masayoshi Umeno, Diamond ﹠amp; Related Materials, 2008,17:680-683 and document Prakash R.Somani, Savita P.Somania, M.Umeno, Physica E, 2008,40:2783-2786 has reported the method for using microwave surface wave plasma chemical gaseous phase depositing process to prepare carbon film material.This film is at xenon lamp 100mW/cm
2Intensity of illumination and test voltage be under the situation of 0.2V, dark current is 5 with the ratio of photoelectric current.And document S.Kawai, T.Shinagawa, M.Noda, M.Umeno, Diamond﹠amp; Related Materials 2008, the carbon film photoelectric of reporting among the 17:676-679 lead when room temperature and illumination condition AM 1.5, and photoelectric current is 20～30 with the ratio of dark current.
These carbon film materials all are sedimentary with gas phase process, and a large amount of hydrocarbon gas and ammonias etc. of using are very high to preparation technology's environmental requirement and safety requirements in the preparation process.And these films or band gap are bigger, are not suitable for the application in visible light field, and perhaps Xiang Ying amplitude can also improve further.
Summary of the invention
The purpose of this invention is to provide the iron-doped carbon thin-film material that the pulsed laser deposition legal system is equipped with the white light photoconductive effect.
The pulsed laser deposition legal system is equipped with the iron-doped carbon thin-film material of white light photoconductive effect, it is characterized in that, the vacuum plating of Si (100) substrate, high-purity C target and Fe target being put into pulsed laser deposition equipment is indoor, and vacuum at the bottom of the back of the body in the coating chamber is evacuated to less than 8 * 10
-4Behind the Pa, heating Si substrate to 350 ℃～450 ℃, again with KrF laser pulse bombardment Fe target, and the motor of Fe target and Si substrate is rotated in startup simultaneously, begin to deposit the Fe layer film, the frequency of pulse laser is 1～10Hz, and depositing time is 2～8min, bombard high-purity C target with the KrF laser pulse afterwards, and start the motor that rotates C target and Si substrate simultaneously, and beginning to deposit the C layer film, the frequency of pulse laser is 1～10Hz, depositing time is 4～15min, after deposition finished, insulation annealing 10min～30min allowed the Fe atomic diffusion to the C layer, naturally cool to room temperature, obtain having the iron-doped carbon thin-film material of white light photoconductive effect.
Described Fe target purity is 99.99%.
Described C target purity is 99.9%.
Beneficial effect of the present invention is:
1, be deposited on the pulsed laser deposition method and mix iron carbon film on the n type Si substrate, thickness is the p N-type semiconductorN about 20 nanometers.It is at 70mW/cm
2White light under (Metal-halogen lamp provides), in certain test voltage section, its electricity is led variation and can be reached more than 100 times, greater than the photoconductive changing value of reporting on the document.
2, adopt the pulsed laser deposition method to prepare film, method is simple, process stabilizing, and controllability is good, has very high preparation efficiency.And in film deposition process, avoid using inflammable, explosive, poisonous material, conform to environmental requirement.
Description of drawings
Fig. 1 is the structure of iron-doped carbon thin-film material and the synoptic diagram of photoconductive property test thereof;
Fig. 2 is the room temperature I-V transport property of the iron-doped carbon thin-film material of embodiment 1 preparation;
Fig. 3 is under the iron-doped carbon thin-film material constant current source test condition of embodiment 1 preparation, the photoconductive changing value of different test current correspondences.
Embodiment
The invention will be further described below in conjunction with accompanying drawing:
Embodiment 1
The pulsed laser deposition legal system is equipped with the iron-doped carbon thin-film material of white light photoconductive effect, the vacuum plating of Si (100) substrate of handling well, high-purity C target (described C target purity is 99.9%) and Fe target (described Fe target purity is 99.99%) being put into pulsed laser deposition equipment is indoor, with mechanical pump and molecular pump with the back of the body in the coating chamber at the bottom of vacuum be evacuated to 5 * 10
-4Behind the Pa, heating Si substrate to 400 ℃, use KrF laser apparatus (LambdaPhysics LPX205 again, 248nm, 25ns FWHM) energy of Chan Shenging is the pulsed bombardment Fe target of 360mJ, and starts the motor of rotation Fe target and Si substrate simultaneously, begins to deposit the Fe layer film, the frequency of pulse laser is 1Hz, depositing time is 4min, uses KrF laser apparatus (Lambda Physics LPX205,248nm afterwards, 25ns FWHM) energy of Chan Shenging is the high-purity C target of pulsed bombardment of 300mJ, and start the motor that rotates C target and Si substrate simultaneously, and beginning to deposit the C layer film, the frequency of pulse laser is 6Hz, depositing time is 6min, after deposition finished, insulation annealing 20min allowed the Fe atomic diffusion to the C layer, naturally cool to room temperature, obtain having the iron-doped carbon thin-film material of white light photoconductive properties.
Other processing parameters in the deposition process also comprise: the distance between target holder and the substrate holder is 50mm, the bundle spot size of laser beam on target is about 2 * 2mm, used Si substrate is n type Si (100), and resistivity is 0.55～0.8 Ω cm, and size is 10 * 5 * 0.5mm.Before the preparation, the Si substrate is put into acetone and alcohol ultrasonic cleaning each 3 times successively, every all over 5min, be that 10% hydrofluoric acid aqueous solution carries out corrosion treatment with mass concentration again.The thickness of prepared iron-doped carbon thin-film material is measured by TEM (JEM-2011); Interface structure uses TEM (JEM-2011) to observe equally; The IV performance is measured by the Keithley2400 current voltmeter with four electrode method; Light source is provided by Metal-halogen lamp.The C layer thickness of iron-doped carbon thin-film material is 18nm.
The synoptic diagram of the structure of iron-doped carbon thin-film material and photoconductive property test thereof as shown in Figure 1.The room temperature I-V transport property of the iron-doped carbon thin-film material that Fig. 2 obtains for present embodiment.As can be seen from Figure 2, along with the increase of test current, the voltage that detects increases at first apace, and behind a critical current, voltage increases lentamente again.And along with the increase of intensity of illumination, critical current also correspondingly increases.Among Fig. 2,0 zone is just being approached in the most significant zone of photoresponse corresponding to test current, like this from application point, just can save the power consumption of device.And this film is the dialogue photophase, and use face is wider.Under the iron-doped carbon thin-film material constant current source test condition of Fig. 3 for the present embodiment preparation, the photoconductive changing value of different test current correspondences.Fig. 3 demonstration, when test current is the 1mA left and right sides, the following and 70mW/cm of dark condition
2The ratio of the voltage that detects under the illumination condition, that is the ratio of dark resistance and light resistance can reach more than 100 times.Performance-relevant accompanying drawing is at embodiment 1.The test synoptic diagram is at all embodiment.
The pulsed laser deposition legal system is equipped with the iron-doped carbon thin-film material of white light photoconductive effect, the vacuum plating of Si (100) substrate of handling well, high-purity C target (described C target purity is 99.9%) and Fe target (described Fe target purity is 99.99%) being put into pulsed laser deposition equipment is indoor, with mechanical pump and molecular pump with the back of the body in the coating chamber at the bottom of vacuum be evacuated to 4.5 * 10
-4Behind the Pa, heating Si substrate to 450 ℃, use KrF laser apparatus (Lambda Physics LPX205 again, 248nm, 25ns FWHM) energy of Chan Shenging is the pulsed bombardment Fe target of 340mJ, and starts the motor of rotation Fe target and Si substrate simultaneously, begins to deposit the Fe layer film, the frequency of pulse laser is 4Hz, depositing time is 2min, uses KrF laser apparatus (Lambda PhysicsLPX205,248nm afterwards, 25ns FWHM) energy of Chan Shenging is the high-purity C target of pulsed bombardment of 300mJ, and start the motor that rotates C target and Si substrate simultaneously, and beginning to deposit the C layer film, the frequency of pulse laser is 10Hz, depositing time is 10min, after deposition finished, insulation annealing 15min allowed the Fe atomic diffusion to the C layer, naturally cool to room temperature, obtain having the iron-doped carbon thin-film material of white light photoconductive properties.
Other processing parameters in the deposition process also comprise: the distance between target holder and the substrate holder is 50mm, the bundle spot size of laser beam on target is about 2 * 2mm, used Si substrate is n type Si (100), and resistivity is 0.55～0.8 Ω cm, and size is 10 * 5 * 0.5mm.Before the preparation, equally the Si substrate is put into successively acetone and alcohol ultrasonic cleaning 3 times, every all over 5min, be that 10% hydrofluoric acid aqueous solution carries out corrosion treatment with mass concentration again.
With the iron-doped carbon thin-film material of method for preparing, the following and 70mW/cm of dark condition
2Under the Metal-halogen lamp illuminate condition, its electricity is led variation and can be reached more than 100 times, obviously is better than the photoconductance of reporting in the above-mentioned document.From preparation technology's angle, the whole process of film preparation avoids using inflammable, explosive, poisonous gas, compliance with environmental protection requirements.
Claims (3)
1, the pulsed laser deposition legal system is equipped with the iron-doped carbon thin-film material of white light photoconductive effect, it is characterized in that, the vacuum plating of Si (100) substrate, high-purity C target and Fe target being put into pulsed laser deposition equipment is indoor, and vacuum at the bottom of the back of the body in the coating chamber is evacuated to less than 8 * 10
-4Behind the Pa, heating Si substrate to 350 ℃～450 ℃, again with KrF laser pulse bombardment Fe target, and the motor of Fe target and Si substrate is rotated in startup simultaneously, begin to deposit the Fe layer film, the frequency of pulse laser is 1～10Hz, and depositing time is 2～8min, bombard high-purity C target with the KrF laser pulse afterwards, and start the motor that rotates C target and Si substrate simultaneously, and beginning to deposit the C layer film, the frequency of pulse laser is 1～10Hz, depositing time is 4～15min, after deposition finished, insulation annealing 10min～30min allowed the Fe atomic diffusion to the C layer, naturally cool to room temperature, obtain having the iron-doped carbon thin-film material of white light photoconductive effect.
2, pulsed laser deposition legal system according to claim 1 is equipped with the iron-doped carbon thin-film material of white light photoconductive effect, it is characterized in that, described Fe target purity is 99.99%.
3, pulsed laser deposition legal system according to claim 1 is equipped with the iron-doped carbon thin-film material of white light photoconductive effect, it is characterized in that, described C target purity is 99.9%.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102102172A (en) * | 2010-11-18 | 2011-06-22 | 清华大学 | Heterojunction thin film material with white light photovoltaic effect and preparation method thereof |
| CN103673885A (en) * | 2012-08-31 | 2014-03-26 | 上海交通大学 | Photoelectric displacement sensor |
| CN104928630A (en) * | 2015-05-21 | 2015-09-23 | 南京大学 | Method for preparing FeSeTe film by pulse laser deposition coating technology |
| CN105355701A (en) * | 2015-09-15 | 2016-02-24 | 电子科技大学 | Novel photo-conductive detector |
| CN106449886A (en) * | 2016-11-23 | 2017-02-22 | 绍兴文理学院 | Doped film material with photoconductive effect |
| CN109306455A (en) * | 2018-10-24 | 2019-02-05 | 同济大学 | A kind of amorphous carbon thin film of Fe2O3 doping and preparation method thereof |
| CN110808285A (en) * | 2019-11-26 | 2020-02-18 | 华南理工大学 | HEMT device based on Cu substrate and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1200468C (en) * | 2003-01-09 | 2005-05-04 | 清华大学 | Fe-C film material with room temperature positive giant magnetoresistive effect and prepared via PLD process |
| CN100470868C (en) * | 2004-09-14 | 2009-03-18 | 清华大学 | FexCl-x/Fe/Si multilayer coating material with low field room temperature huge magnetic resistance effect |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102102172A (en) * | 2010-11-18 | 2011-06-22 | 清华大学 | Heterojunction thin film material with white light photovoltaic effect and preparation method thereof |
| CN102102172B (en) * | 2010-11-18 | 2013-06-12 | 清华大学 | Heterojunction thin film material with white light photovoltaic effect and preparation method thereof |
| CN103673885A (en) * | 2012-08-31 | 2014-03-26 | 上海交通大学 | Photoelectric displacement sensor |
| CN104928630A (en) * | 2015-05-21 | 2015-09-23 | 南京大学 | Method for preparing FeSeTe film by pulse laser deposition coating technology |
| CN105355701A (en) * | 2015-09-15 | 2016-02-24 | 电子科技大学 | Novel photo-conductive detector |
| CN105355701B (en) * | 2015-09-15 | 2017-07-07 | 电子科技大学 | A kind of new photoconductive detector |
| CN106449886A (en) * | 2016-11-23 | 2017-02-22 | 绍兴文理学院 | Doped film material with photoconductive effect |
| CN109306455A (en) * | 2018-10-24 | 2019-02-05 | 同济大学 | A kind of amorphous carbon thin film of Fe2O3 doping and preparation method thereof |
| CN110808285A (en) * | 2019-11-26 | 2020-02-18 | 华南理工大学 | HEMT device based on Cu substrate and preparation method thereof |
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