CN109306455A - A kind of amorphous carbon thin film of Fe2O3 doping and preparation method thereof - Google Patents
A kind of amorphous carbon thin film of Fe2O3 doping and preparation method thereof Download PDFInfo
- Publication number
- CN109306455A CN109306455A CN201811241590.1A CN201811241590A CN109306455A CN 109306455 A CN109306455 A CN 109306455A CN 201811241590 A CN201811241590 A CN 201811241590A CN 109306455 A CN109306455 A CN 109306455A
- Authority
- CN
- China
- Prior art keywords
- amorphous carbon
- thin film
- preparation
- fe2o3 doping
- carbon thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention relates to amorphous carbon thin films of a kind of Fe2O3 doping and preparation method thereof, the following steps are included: (1) pre-processes: after iron plate is carried out sanding and polishing processing as base material, it is pasted on the specimen holder of vacuum chamber after cleaning drying, using carbon line as evaporation source, connection electrode；(2) prepare before plating: by vacuum chamber, and adjusting target-substrate distance；(3) it is deposited: under inert gas conditions, adjusting resistance steaming electric current and be deposited, deposit one layer of C film on the surface of iron plate, the amorphous carbon thin film of Fe2O3 doping is prepared.Compared with prior art, the present invention is mainly made of two kinds of valence states of graphitized carbon sp2 and diamond carbon sp3 using the amorphous carbon thin film of the Fe2O3 doping of vacuum vapour deposition preparation, and distance Iron substrate is closer, and degree of graphitization is higher, and preparation method is simple, film forming speed is fast, high-efficient.
Description
Technical field
The present invention relates to a kind of C films, more particularly, to a kind of amorphous carbon thin film and preparation method thereof of Fe2O3 doping.
Background technique
Amorphous carbon thin film is the non-crystalline material of a kind of metastable state longrange disorder containing sp3 and sp2 key, has both diamond
With the good characteristic of graphite, there is high hardness and high elastic modulus, low-friction coefficient, excellent wear-resisting property, goodization
The features such as learning inertia and biocompatibility has wide answer in fields such as machinery, electronics, optics, biomedicine, aerospaces
Use prospect.
In recent years, the different elements such as Au, N, Ni and ZnO or nano particle are doped in amorphous carbon thin film, preparation tool
There is the Functional carbon based coextruded film of the properties such as good electrical, optics, magnetics and photocatalysis, causes the interest of researcher, it is special
It is not the amorphous carbon thin film of Fe2O3 doping, it is peculiar shows P-type semiconductor, giant magnetoresistance effect and big extraordinary Hall effect etc.
Property gains a special interest.However, iron/amorphous carbon interaction mechanism is probed into still during generating for this phenomenon
There are many difficulties, and study seldom, and amorphous carbon thin film and metallic substrates binding force are lower, are easy to produce film stripping
It falls, is widely applied to limit it.
In general, being divided into diamond-like amorphous carbon film according to the relative concentration ratio of sp3 and sp2 key in amorphous carbon film
With class graphite amorphous carbon film.The former, sp3 key carbon relative concentration is higher, forms disordered networks structure, affects the machine of C film
Tool performance；Sp2 key carbon relative concentration is higher, and class graphite farmland is gathered into the form of six-membered ring, influences the dielectricity of C film
Energy is equal.Therefore, in amorphous carbon film there is closely the performance of concentration ratio and amorphous carbon film in sp3 key carbon and sp2 key carbon phase
Connection.
Common film preparing technology has vacuum vapour deposition, sputtering method, pulse laser deposition, molecular beam epitaxy, gold
Belong to organic chemical vapor deposition, hot-wire chemical gas-phase deposition and plasma reinforced chemical vapour deposition etc., magnetron sputtering or
The masking techniques such as plasma gas phase deposition, device systems are complicated, and hardly possible operation, film performance is unstable, at high cost.
Summary of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide a kind of amorphous of Fe2O3 doping
State C film and preparation method thereof.
The purpose of the present invention can be achieved through the following technical solutions:
A kind of preparation method of the amorphous carbon thin film of Fe2O3 doping, comprising the following steps:
(1) it pre-processes: after iron plate is carried out sanding and polishing processing as base material, being pasted onto vacuum chamber after cleaning drying
Specimen holder on, using carbon line as evaporation source, connection electrode；
(2) prepare before plating: by vacuum chamber, and adjusting target-substrate distance；
(3) it is deposited: under inert gas conditions, adjusting resistance steaming electric current and be deposited, deposit one layer of carbon on the surface of iron plate
The amorphous carbon thin film of Fe2O3 doping is prepared in film.
As a preferred embodiment of the above solution, in step (1): the purity of iron plate is 99.99%, having a size of 10mm × 10mm ×
3mm, the purity of carbon line are 99.99%.
As a preferred embodiment of the above solution, in step (1): cleaning is successively cleaned by ultrasonic using acetone and dehydrated alcohol
15-30min removes surface and oil contaminant, is dried up using nitrogen or argon gas.
As a preferred embodiment of the above solution, in step (2): preheating base material makes the temperature of iron plate reach 150-200 DEG C.
As a preferred embodiment of the above solution, in step (2): the indoor vacuum degree of vacuum is greater than 5 × 10-3Pa。
As a preferred embodiment of the above solution, in step (2): distance is 50- between target-substrate distance, i.e. base material and evaporation source
60mm。
As a preferred embodiment of the above solution, in step (2): when vacuumizing, first blocking iron plate, vacuum degree to be achieved with baffle
Afterwards, iron plate is removed.
The process conditions being deposited in step (3) as a preferred embodiment of the above solution, are as follows: inert gas is argon gas, and flow is
0.1-0.5mL/min, carbon line preheat 20-30s, evaporation current 40-50A, sedimentation time 10-20min, and carbon line fusing is steamed
Plating is completed.
As a preferred embodiment of the above solution, in step (3): specimen holder keeps rotation to keep the uniform of vapor deposition during vapor deposition
Property, revolving speed 10-15rpm.
Prepare the amorphous carbon thin film of Fe2O3 doping using vacuum vapour deposition, the substrate when surface nature of base material, vapor deposition
The factors such as temperature, evaporation rate, the vacuum degree of material all will affect the quality of the C film of preparation.Deposition is needed higher
Completed under vacuum degree, vacuum degree is too low, evaporation source molecule or atom will with bulk gas molecular collision, make the C film of preparation by
Pollution, or even form oxide etc., so that C film purity declines；Evaporation rate is determined by added electric current, if electric current is excessively high,
Evaporation rate is too fast, it is difficult to form uniform continuous film, conversely, deposited particles are too big, ingredient valence distribution is uneven, film surface
Flatness is poor；Target-substrate distance produces bigger effect thickness of coating uniformity.
Compared with prior art, the interface carbon of the amorphous carbon of the Fe2O3 doping prepared by the present invention is mainly with amorphous
Carbon, iron-carbon compound form exist, and wherein amorphous carbon thin film is mainly by two kinds of valence states of graphitized carbon sp2 and diamond carbon sp3
It constitutes, closer apart from substrate, degree of graphitization is higher.Preparation method of the present invention is simple, and deposition efficiency is high, and the iron being prepared is mixed
Miscellaneous amorphous carbon thin film is finer and close.
Detailed description of the invention
Fig. 1 is the XRD diagram of the amorphous carbon thin film of Fe2O3 doping prepared by the present invention；
Fig. 2 is the XPS figure that the amorphous carbon thin film etch period of Fe2O3 doping prepared by the present invention is 600s；
Fig. 3 is the XPS figure that the amorphous carbon thin film etch period of Fe2O3 doping prepared by the present invention is 660s；
Fig. 4 is the XPS figure that the amorphous carbon thin film etch period of Fe2O3 doping prepared by the present invention is 720s；
Fig. 5 is the XPS figure that the amorphous carbon thin film etch period of Fe2O3 doping prepared by the present invention is 780s.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1
Using use for laboratory vacuum evaporation plating machine, base material is high purity iron (99.99%), having a size of 10mm × 10mm ×
3mm, mirror finish processing, is successively cleaned by ultrasonic 20min using preceding in dehydrated alcohol and acetone, after then being dried up with argon gas,
Be pasted onto vacuum chamber specimen holder, specimen holder during vapor deposition rotation to keep the uniformity of film, revolving speed 15rpm；Evaporation
Source is high-purity carbon line (99.99%), both ends jockey and electrode；Before vapor deposition, target-substrate distance is adjusted, i.e. adjustment base material and steaming
Between rising distance be 50mm, and use evaporation source baffle protecting group bottom, be evacuated to vacuum degree be greater than 5 × 10-3Pa removes gear
Plate；When vapor deposition, lead to argon gas, flow 0.5mL/min, carbon line preheats 30s；Evaporation current is adjusted to 40A, carries out C film steaming
Plating；After depositing 20min, carbon line fusing, vapor deposition is completed.
Embodiment 2
Using use for laboratory vacuum evaporation plating machine, base material is high purity iron (99.99%), having a size of 10mm × 10mm ×
3mm, mirror finish processing, is successively cleaned by ultrasonic 15min using preceding in dehydrated alcohol and acetone, after then being dried up with argon gas,
Be pasted onto vacuum chamber specimen holder, specimen holder during vapor deposition rotation to keep the uniformity of film, revolving speed 15rpm；Evaporation
Source is high-purity carbon line (99.99%), both ends jockey and electrode；Before vapor deposition, target-substrate distance is adjusted, i.e. adjustment base material and steaming
Between rising distance be 55mm, and use evaporation source baffle protecting group bottom, be evacuated to vacuum degree be greater than 5 × 10-3Pa removes gear
Plate；When vapor deposition, lead to argon gas, flow 0.5mL/min, carbon line preheats 30s；Evaporation current is adjusted to 45A, carries out C film steaming
Plating；After depositing 15min, carbon line fusing, vapor deposition is completed.
The amorphous carbon thin film for the Fe2O3 doping being prepared carries out XRD test, and Fig. 1 show X-ray diffraction of the invention
Map, from map as can be seen that carbon component is made of carbon and iron-carbon compound.
The amorphous carbon film being prepared is subjected to XPS detection, attached drawing 2-5 is along amorphous carbon film surface to iron carbon interface
Direction, dissect etch period be 600s, 660s, 720s and 780s C1s spectrogram, etching depth be respectively 162nm, 178nm,
194nm and 210nm.From C1s spectrogram fitting result, it is known that along amorphous carbon film surface to iron carbon interface direction, sp2/sp3 hydridization
Key relative concentration ratio is gradually increased, and degree of graphitization increases, while Fe-C compounds content gradually increases.
It is found from experimental result of the invention, the amorphous carbon film of vacuum vapour deposition preparation of the present invention is thin along amorphous carbon
To iron carbon interface direction, sp2/sp3 hybrid bond relative concentration ratio is gradually increased film surface, and degree of graphitization increases, while Fe-
C compounds content gradually increases.
Embodiment 3
Using use for laboratory vacuum evaporation plating machine, base material is high purity iron (99.99%), having a size of 10mm × 10mm ×
3mm, mirror finish processing, is successively cleaned by ultrasonic 30min using preceding in dehydrated alcohol and acetone, after then being dried up with argon gas,
Be pasted onto vacuum chamber specimen holder, specimen holder during vapor deposition rotation to keep the uniformity of film, revolving speed 13rpm；Evaporation
Source is high-purity carbon line (99.99%), both ends jockey and electrode；Before vapor deposition, target-substrate distance is adjusted, i.e. adjustment base material and steaming
Between rising distance be 60mm, and use evaporation source baffle protecting group bottom, be evacuated to vacuum degree be greater than 5 × 10-3Pa removes gear
Plate；When vapor deposition, lead to argon gas, flow 0.1mL/min, carbon line preheats 20s；Evaporation current is adjusted to 50A, carries out C film steaming
Plating；After depositing 10min, carbon line fusing, vapor deposition is completed.
Embodiment 4
Using use for laboratory vacuum evaporation plating machine, base material is high purity iron (99.99%), having a size of 10mm × 10mm ×
3mm, mirror finish processing, is successively cleaned by ultrasonic 15min using preceding in dehydrated alcohol and acetone, after then being dried up with argon gas,
Be pasted onto vacuum chamber specimen holder, specimen holder during vapor deposition rotation to keep the uniformity of film, revolving speed 10rpm；Evaporation
Source is high-purity carbon line (99.99%), both ends jockey and electrode；Before vapor deposition, target-substrate distance is adjusted, i.e. adjustment base material and steaming
Between rising distance be 60mm, and use evaporation source baffle protecting group bottom, be evacuated to vacuum degree be greater than 5 × 10-3Pa removes gear
Plate；When vapor deposition, lead to argon gas, flow 0.3mL/min, carbon line preheats 25s；Evaporation current is adjusted to 50A, carries out C film steaming
Plating；After depositing 10min, carbon line fusing, vapor deposition is completed.
The above description of the embodiments is intended to facilitate ordinary skill in the art to understand and use the invention.
Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein general
Principle is applied in other embodiments without having to go through creative labor.Therefore, the present invention is not limited to the above embodiments, ability
Field technique personnel announcement according to the present invention, improvement and modification made without departing from the scope of the present invention all should be of the invention
Within protection scope.
Claims (9)
1. a kind of preparation method of the amorphous carbon thin film of Fe2O3 doping, which comprises the following steps:
(1) it pre-processes: after iron plate is carried out sanding and polishing processing as base material, the sample of vacuum chamber is pasted onto after cleaning drying
On product frame, using carbon line as evaporation source, connection electrode；
(2) prepare before plating: by vacuum chamber, and adjusting target-substrate distance；
(3) it is deposited: under inert gas conditions, adjusting resistance steaming electric current and be deposited, deposit one layer of C film on the surface of iron plate,
The amorphous carbon thin film of Fe2O3 doping is prepared.
2. a kind of preparation method of the amorphous carbon thin film of Fe2O3 doping according to claim 1, which is characterized in that step
(1) in: the purity of iron plate is 99.99%, and having a size of 10mm × 10mm × 3mm, the purity of carbon line is 99.99%.
3. a kind of preparation method of the amorphous carbon thin film of Fe2O3 doping according to claim 1, which is characterized in that step
(1) in: cleaning successively carries out ultrasonic cleaning 15-30min using acetone and dehydrated alcohol, is dried up using nitrogen or argon gas.
4. a kind of preparation method of the amorphous carbon thin film of Fe2O3 doping according to claim 1, which is characterized in that step
(2) in: the indoor vacuum degree of vacuum is greater than 5 × 10-3Pa。
5. a kind of preparation method of the amorphous carbon thin film of Fe2O3 doping according to claim 1, which is characterized in that step
(2) in: distance is 50-60mm between target-substrate distance, i.e. base material and evaporation source.
6. a kind of preparation method of the amorphous carbon thin film of Fe2O3 doping according to claim 1, which is characterized in that step
(2) in: first blocking iron plate with baffle when vacuumizing, after vacuum degree to be achieved, remove iron plate.
7. a kind of preparation method of the amorphous carbon thin film of Fe2O3 doping according to claim 1, which is characterized in that step
(3) process conditions being deposited in are as follows: inert gas is argon gas, flow 0.1-0.5mL/min, carbon line preheating 20-30s, evaporation
Electric current is 40-50A, sedimentation time 10-20min.
8. a kind of preparation method of the amorphous carbon thin film of Fe2O3 doping according to claim 1, which is characterized in that step
(3) in: specimen holder keeps rotation, revolving speed 10-15rpm during vapor deposition.
9. using the amorphous carbon thin film of Fe2O3 doping made from preparation method described in any one of claim 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811241590.1A CN109306455B (en) | 2018-10-24 | 2018-10-24 | Iron-doped amorphous carbon film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811241590.1A CN109306455B (en) | 2018-10-24 | 2018-10-24 | Iron-doped amorphous carbon film and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109306455A true CN109306455A (en) | 2019-02-05 |
| CN109306455B CN109306455B (en) | 2020-04-28 |
Family
ID=65225578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811241590.1A Active CN109306455B (en) | 2018-10-24 | 2018-10-24 | Iron-doped amorphous carbon film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109306455B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005083144A1 (en) * | 2004-02-27 | 2005-09-09 | Japan Science And Technology Agency | Carbonaceous thin film, process for producing the same and member utilizing the thin film |
| CN101550530A (en) * | 2009-04-03 | 2009-10-07 | 清华大学 | Prepare iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition method |
| CN101777590A (en) * | 2010-01-15 | 2010-07-14 | 清华大学 | Heterogenous junction film material with white light photovoltaic effect and preparation method thereof |
| US20130316156A1 (en) * | 2010-11-29 | 2013-11-28 | Marcus Kennedy | Sliding element, in particular a piston ring, having a coating |
| CN104513955A (en) * | 2013-09-26 | 2015-04-15 | 中国科学院宁波材料技术与工程研究所 | Preparation method of nitrogen-doped porous carbon film and product thereof |
-
2018
- 2018-10-24 CN CN201811241590.1A patent/CN109306455B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005083144A1 (en) * | 2004-02-27 | 2005-09-09 | Japan Science And Technology Agency | Carbonaceous thin film, process for producing the same and member utilizing the thin film |
| CN101550530A (en) * | 2009-04-03 | 2009-10-07 | 清华大学 | Prepare iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition method |
| CN101777590A (en) * | 2010-01-15 | 2010-07-14 | 清华大学 | Heterogenous junction film material with white light photovoltaic effect and preparation method thereof |
| US20130316156A1 (en) * | 2010-11-29 | 2013-11-28 | Marcus Kennedy | Sliding element, in particular a piston ring, having a coating |
| CN104513955A (en) * | 2013-09-26 | 2015-04-15 | 中国科学院宁波材料技术与工程研究所 | Preparation method of nitrogen-doped porous carbon film and product thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109306455B (en) | 2020-04-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Miyazawa et al. | Preparation and structure of carbon film deposited by a mass‐separated C+ ion beam | |
| JP6312357B2 (en) | Vacuum coating apparatus and method for depositing nanocomposite coatings | |
| CN106757361A (en) | MoS is grown based on CVD2The method of two dimensional crystal | |
| CN1810629A (en) | Gas phase synthesis process of nanometer particle array with one-dimensional diameter and number density gradient | |
| CN101113516A (en) | Method for preparing nano composite diamond coating | |
| JP2010174310A (en) | Method of producing diamond-like carbon membrane | |
| Pobedinskas et al. | Nanodiamond seeding on plasma-treated tantalum thin films and the role of surface contamination | |
| Park et al. | Effect of electric bias on the deposition behavior of ZnO nanostructures in the chemical vapor deposition process | |
| Yang et al. | Mechanism of enhanced wettability of nanocrystalline diamond films by plasma treatment | |
| CN109306455A (en) | A kind of amorphous carbon thin film of Fe2O3 doping and preparation method thereof | |
| Sugino et al. | Electron emission from nanocrystalline boron nitride films synthesized by plasma-assisted chemical vapor deposition | |
| Jamali et al. | Effect of deposition parameters on the microstructure and deposition rate of germanium-carbon coatings prepared by plasma enhanced chemical vapor deposition | |
| US9719164B2 (en) | Method of manufacturing compound film | |
| CN104651790B (en) | A kind of metallic resistance rate Cu/Cu2O semiconductor disperse laminated films and preparation method thereof | |
| Liu et al. | Effects of metallic interlayers on the performance of nanocrystalline diamond metal-semiconductor-metal photodetectors | |
| Thi | Microprobe study of enhanced Raman scattering effect on WO3/Ag thin films | |
| CN103014845B (en) | A kind of method of micro/nano-scale Graphene self-assembled growth | |
| Zhai et al. | Fast growth of conductive amorphous carbon films by HFCVD with filament temperature control | |
| Bui et al. | Supporting plasma processes for fabrication of n-doped nano-crystalline silicon thin film on low-cost glass substrates | |
| JP5736102B2 (en) | Polycrystalline silicon film forming method, polycrystalline silicon film forming apparatus, and substrate on which polycrystalline silicon film is formed | |
| Panosyan et al. | Methods for preparation of transparent conductive diamond-like carbon films and mechanisms of conductivity formation | |
| Katamune et al. | Study on defects in ultrananocrystalline diamond/amorphous carbon composite films prepared by physical vapor deposition | |
| Rasoola et al. | Synthesis of semiconductor materials (thin film/thick film/bulk) using Chemical/Physical Technique | |
| Rikitake | PacSurf2018 Session TF-WeP: Thin Films Poster Session II | |
| Kim | Thin Films Room Naupaka Salon 1-3-Session TF-WeP Thin Films Poster Session II |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |