CN106449886A - Doped film material with photoconductive effect - Google Patents
Doped film material with photoconductive effect Download PDFInfo
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- CN106449886A CN106449886A CN201611037427.4A CN201611037427A CN106449886A CN 106449886 A CN106449886 A CN 106449886A CN 201611037427 A CN201611037427 A CN 201611037427A CN 106449886 A CN106449886 A CN 106449886A
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- 239000000463 material Substances 0.000 title claims abstract description 45
- 230000000694 effects Effects 0.000 title claims abstract description 26
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims abstract description 48
- 238000003756 stirring Methods 0.000 claims abstract description 35
- 238000006243 chemical reaction Methods 0.000 claims abstract description 33
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 17
- 239000002270 dispersing agent Substances 0.000 claims abstract description 16
- 238000001035 drying Methods 0.000 claims abstract description 16
- 235000006408 oxalic acid Nutrition 0.000 claims abstract description 16
- 238000005245 sintering Methods 0.000 claims abstract description 16
- 239000003963 antioxidant agent Substances 0.000 claims abstract description 15
- 239000007822 coupling agent Substances 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 14
- 230000003078 antioxidant effect Effects 0.000 claims abstract description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 28
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 239000006097 ultraviolet radiation absorber Substances 0.000 claims description 15
- 230000000740 bleeding effect Effects 0.000 claims description 14
- -1 polyethylene terephthalate Polymers 0.000 claims description 14
- 235000006708 antioxidants Nutrition 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 12
- 239000010408 film Substances 0.000 claims description 11
- 229910052635 ferrosilite Inorganic materials 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 10
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- SPSPIUSUWPLVKD-UHFFFAOYSA-N 2,3-dibutyl-6-methylphenol Chemical compound CCCCC1=CC=C(C)C(O)=C1CCCC SPSPIUSUWPLVKD-UHFFFAOYSA-N 0.000 claims description 5
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 5
- 235000010354 butylated hydroxytoluene Nutrition 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 5
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 4
- ZXDDPOHVAMWLBH-UHFFFAOYSA-N 2,4-Dihydroxybenzophenone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=CC=C1 ZXDDPOHVAMWLBH-UHFFFAOYSA-N 0.000 claims description 3
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 3
- 229920002401 polyacrylamide Polymers 0.000 claims description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 6
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 3
- 229910052742 iron Inorganic materials 0.000 abstract 3
- 239000002202 Polyethylene glycol Substances 0.000 abstract 1
- 239000002250 absorbent Substances 0.000 abstract 1
- 230000002745 absorbent Effects 0.000 abstract 1
- 238000005273 aeration Methods 0.000 abstract 1
- 238000001914 filtration Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 229920001223 polyethylene glycol Polymers 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 abstract 1
- 238000005286 illumination Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000010998 test method Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Polymers (AREA)
Abstract
The invention discloses a doped film material with photoconductive effect. The preparation method of the doped film material comprises the following steps: step one, slowly adding iron silicate into hydrochloric acid, uniformly stirring, and filtering residues till iron silicate is completely dissolved, so as to obtain an iron silicate solution; step two, slowing adding oxalic acid into the solution, and stirring for 1 to 2h at low temperature; step three, respectively adding a coupling agent, an ultraviolet absorbent and an antioxidant into the solution, uniformly stirring for 2 to 3h at high temperature, then adding organic silicon resin, and stirring for 1 to 2h at normal temperature, so as to obtain mixed liquor; step four, coating the surface of a base material with the mixed liquor, and then performing sealed protective sintering for 3 to 8h; step five, adding polyethylene glycol terephthalate, tetrabutyl titanate and a dispersing agent into absolute ethyl alcohol, uniformly stirring, adding a penetrating agent, and performing aeration reaction for 2 to 5h, so as to obtain a coating solution; step six, uniformly coating the surface of the base material with the coating solution, and drying for 2 to 4h at constant temperature; step seven, adding the dried base material into mixed gas, performing high-temperature reaction for 4 to 6h, and then performing cooling, so as to obtain the doped film material. The doped film material has the advantages of excellent performance, low cost, simple operation process and high easiness in operation, and has excellent photovoltaic and photoconductive effect.
Description
Technical field
The invention belongs to technical field of solar is and in particular to a kind of doping type thin-film material with photoconductive effect.
Background technology
Flourishing with modern industry, traditional fossil energy is constantly exhausted, the environmental pollution thereby resulting in also day
Benefit is serious.Therefore, how efficiently now to have become as the emphasis of countries in the world government energy research using solar energy, high efficiency is low
The development of cost solar cell is exactly one of important channel of Solar use.Solar-energy photo-voltaic cell is by photoelectric effect handle
Luminous energy is converted into the device of electric energy.The operation principle of photovoltaic effect is：Solar irradiation forms both hole and electron in semiconductor P-N junction
Right, in the presence of P-N junction electric field, hole flows to P area by N area, and electronics flows to N area by P area, is formed for electricity after connecting circuit
Stream.Although the solar cell accounting for main flow at present is monocrystalline silicon, polysilicon, non-crystal silicon solar cell, due to complicated
Preparation technology and too high production cost limit its extensive application in daily life, to the environmental requirement of preparation technology and
Safety requirements is all very high.
Content of the invention
It is an object of the invention to provide a kind of doping type thin-film material with photoconductive effect, it is excellent that the present invention has performance
More, cheap, operating process is simple, easy to operate the advantages of, there is excellent photovoltaic and photoconductive effect.
A kind of doping type thin-film material with photoconductive effect, its preparation process is as follows：
Step 1, ferrosilite is slowly added in hydrochloric acid, stirs, until filter residue after dissolving completely, obtains silicic acid ferrous solution；
Step 2, oxalic acid is slowly added to solution, and low temperature stirs 1-2h；
Step 3, coupling agent, ultraviolet absorber and antioxidant are separately added in solution, carry out the uniform 2-3h of high-temperature stirring, so
Add organic siliconresin stirring at normal temperature 1-2h afterwards, obtain mixed liquor；
Step 4, mixed liquor is coated in substrate surface, then carries out sealing protection sintering 3-8h；
Step 5, polyethylene terephthalate, tetrabutyl titanate and dispersant is put in absolute ethyl alcohol and stirs, so
Add bleeding agent, aerated reaction 2-5h afterwards, obtain coating liquid；
Step 6, coating liquid is coated uniformly on substrate surface, constant temperature drying 2-4h；
Step 7, the base material after drying is put into mixed gas inner high voltage reaction 4-6h, can get doping type film material after cooling
Material.
The preparation formula of described thin-film material is as follows：
Ferrosilite 15-20 part, hydrochloric acid 30-50 part, oxalic acid 20-30 part, coupling agent 4-8 part, ultraviolet absorber 1-4 part, anti-oxidant
Agent 2-4 part, organic siliconresin 5-10 part, polyethylene terephthalate 3-5 part, tetrabutyl titanate 8-15 part, absolute ethyl alcohol
30-50 part, dispersant 1-3 part, bleeding agent 1-3 part.
Described coupling agent adopts vinyltrimethoxy silane or VTES.
Described ultraviolet absorber adopts septichen phenyl ester or 2,4-DihydroxyBenzophenone.
Described antioxidant adopts dibutyl hydroxy toluene.
Described dispersant adopts one of polyvinylpyrrolidone, polyacrylamide or Tissuemat E.
Described bleeding agent adopts AEO.
Oxalic acid rate of addition in described step 2 is 20-40g/min, and the temperature of described low-temp reaction is 50-70 DEG C.
The temperature of the high-temperature stirring in described step 3 is 80-100 DEG C.
The protective gas of the sealing protection sintering in described step 4 adopts nitrogen, and described sintering temperature is 300-800 DEG C.
The temperature of the aerated reaction in described step 5 is 70-100 DEG C, described aerated reaction gas flow rate 5-12mL/min,
Described aerated reaction adopts nitrogen.
Constant temperature drying temperature in described step 6 is 60-80 DEG C, and coated area adopts 10-15mL/cm2.
Mixed gas in described step 7 adopt the mixed gas of methane and methylamine, and the content of described methylamine gas is 30-
60%, the temperature of described reaction under high pressure is 80-100 DEG C, and pressure is 0.7-1.3MPa.
Compared with prior art, the invention has the advantages that：
1st, the present invention has the advantages that superior performance, cheap, operating process is simple, easy to operate, have excellent photovoltaic and
Photoconductive effect.
2nd, present invention process is stable, and controllability is good, has higher preparation efficiency.
3rd, the present invention adopts the reaction under high pressure of methylamine and methane gas, can not only play defect repair effect, carry simultaneously
High photoconductive effect.
Specific embodiment
With reference to embodiment, the present invention is described further：
Embodiment 1
A kind of doping type thin-film material with photoconductive effect, its preparation process is as follows：
Step 1, ferrosilite is slowly added in hydrochloric acid, stirs, until filter residue after dissolving completely, obtains silicic acid ferrous solution；
Step 2, oxalic acid is slowly added to solution, and low temperature stirs 1h；
Step 3, coupling agent, ultraviolet absorber and antioxidant are separately added in solution, carry out the uniform 2h of high-temperature stirring, then
Add organic siliconresin stirring at normal temperature 1h, obtain mixed liquor；
Step 4, mixed liquor is coated in substrate surface, then carries out sealing protection sintering 3h；
Step 5, polyethylene terephthalate, tetrabutyl titanate and dispersant is put in absolute ethyl alcohol and stirs, so
Add bleeding agent, aerated reaction 2h afterwards, obtain coating liquid；
Step 6, coating liquid is coated uniformly on substrate surface, constant temperature drying 2h；
Step 7, the base material after drying is put into mixed gas inner high voltage reaction 4h, can get doping type film material after cooling
Material.
The preparation formula of described thin-film material is as follows：
15 parts of ferrosilite, 30 parts of hydrochloric acid, 20 parts of oxalic acid, 4 parts of coupling agent, 1 part of ultraviolet absorber, 2 parts of antioxidant, organosilicon tree
5 parts of fat, 3 parts of polyethylene terephthalate, 8 parts of tetrabutyl titanate, 30 parts of absolute ethyl alcohol, 1 part of dispersant, 1 part of bleeding agent.
Described coupling agent adopts vinyltrimethoxy silane.
Described ultraviolet absorber adopts septichen phenyl ester.
Described antioxidant adopts dibutyl hydroxy toluene.
Described dispersant adopts polyvinylpyrrolidone.
Described bleeding agent adopts AEO.
Oxalic acid rate of addition in described step 2 is 20g/min, and the temperature of described low-temp reaction is 50 DEG C.
The temperature of the high-temperature stirring in described step 3 is 80 DEG C.
The protective gas of the sealing protection sintering in described step 4 adopts nitrogen, and described sintering temperature is 300 DEG C.
The temperature of the aerated reaction in described step 5 is 70 DEG C, described aerated reaction gas flow rate 5mL/min, described exposure
Solid/liquid/gas reactions adopt nitrogen.
Constant temperature drying temperature in described step 6 is 60 DEG C, and coated area adopts 10mL/cm2.
Mixed gas in described step 7 adopt the mixed gas of methane and methylamine, and the content of described methylamine gas is
30%, the temperature of described reaction under high pressure is 80 DEG C, and pressure is 0.7MPa.
Photoconductive gain is tested：The photoconductive method of testing that film is carried out is that (Keithley is public using Keithley
Department) the measurement dark conductance of the film and conductance of illumination of source table, then calculate photoconductive gain with following equation：(the electricity of illumination
Lead dark conductance)/dark conductance.After testing, photoconductive gain reaches 105.
Embodiment 2
A kind of doping type thin-film material with photoconductive effect, its preparation process is as follows：
Step 1, ferrosilite is slowly added in hydrochloric acid, stirs, until filter residue after dissolving completely, obtains silicic acid ferrous solution；
Step 2, oxalic acid is slowly added to solution, and low temperature stirs 2h；
Step 3, coupling agent, ultraviolet absorber and antioxidant are separately added in solution, carry out the uniform 3h of high-temperature stirring, then
Add organic siliconresin stirring at normal temperature 2h, obtain mixed liquor；
Step 4, mixed liquor is coated in substrate surface, then carries out sealing protection sintering 8h；
Step 5, polyethylene terephthalate, tetrabutyl titanate and dispersant is put in absolute ethyl alcohol and stirs, so
Add bleeding agent, aerated reaction 5h afterwards, obtain coating liquid；
Step 6, coating liquid is coated uniformly on substrate surface, constant temperature drying 4h；
Step 7, the base material after drying is put into mixed gas inner high voltage reaction 6h, can get doping type film material after cooling
Material.
The preparation formula of described thin-film material is as follows：
20 parts of ferrosilite, 50 parts of hydrochloric acid, 30 parts of oxalic acid, 8 parts of coupling agent, 4 parts of ultraviolet absorber, 4 parts of antioxidant, organosilicon tree
10 parts of fat, 5 parts of polyethylene terephthalate, 15 parts of tetrabutyl titanate, 50 parts of absolute ethyl alcohol, 3 parts of dispersant, bleeding agent 3
Part.
Described coupling agent adopts VTES.
Described ultraviolet absorber adopts 2,4-DihydroxyBenzophenone.
Described antioxidant adopts dibutyl hydroxy toluene.
Described dispersant adopts polyacrylamide.
Described bleeding agent adopts AEO.
Oxalic acid rate of addition in described step 2 is 40g/min, and the temperature of described low-temp reaction is 70 DEG C.
The temperature of the high-temperature stirring in described step 3 is 100 DEG C.
The protective gas of the sealing protection sintering in described step 4 adopts nitrogen, and described sintering temperature is 800 DEG C.
The temperature of the aerated reaction in described step 5 is 100 DEG C, and described aerated reaction gas flow rate 12mL/min is described
Aerated reaction adopts nitrogen.
Constant temperature drying temperature in described step 6 is 80 DEG C, and coated area adopts 15mL/cm2.
Mixed gas in described step 7 adopt the mixed gas of methane and methylamine, and the content of described methylamine gas is
60%, the temperature of described reaction under high pressure is 100 DEG C, and pressure is 1.3MPa.
Photoconductive gain is tested：The photoconductive method of testing that film is carried out is that (Keithley is public using Keithley
Department) the measurement dark conductance of the film and conductance of illumination of source table, then calculate photoconductive gain with following equation：(the electricity of illumination
Lead dark conductance)/dark conductance.After testing, photoconductive gain reaches 105.
Embodiment 3
A kind of doping type thin-film material with photoconductive effect, its preparation process is as follows：
Step 1, ferrosilite is slowly added in hydrochloric acid, stirs, until filter residue after dissolving completely, obtains silicic acid ferrous solution；
Step 2, oxalic acid is slowly added to solution, and low temperature stirs 1h；
Step 3, coupling agent, ultraviolet absorber and antioxidant are separately added in solution, carry out the uniform 2h of high-temperature stirring, then
Add organic siliconresin stirring at normal temperature 2h, obtain mixed liquor；
Step 4, mixed liquor is coated in substrate surface, then carries out sealing protection sintering 5h；
Step 5, polyethylene terephthalate, tetrabutyl titanate and dispersant is put in absolute ethyl alcohol and stirs, so
Add bleeding agent, aerated reaction 3h afterwards, obtain coating liquid；
Step 6, coating liquid is coated uniformly on substrate surface, constant temperature drying 3h；
Step 7, the base material after drying is put into mixed gas inner high voltage reaction 5h, can get doping type film material after cooling
Material.
The preparation formula of described thin-film material is as follows：
18 parts of ferrosilite, 40 parts of hydrochloric acid, 25 parts of oxalic acid, 6 parts of coupling agent, 3 parts of ultraviolet absorber, 3 parts of antioxidant, organosilicon tree
8 parts of fat, 4 parts of polyethylene terephthalate, 11 parts of tetrabutyl titanate, 40 parts of absolute ethyl alcohol, 2 parts of dispersant, bleeding agent 2
Part.
Described coupling agent adopts vinyltrimethoxy silane.
Described ultraviolet absorber adopts septichen phenyl ester.
Described antioxidant adopts dibutyl hydroxy toluene.
Described dispersant adopts Tissuemat E.
Described bleeding agent adopts AEO.
Oxalic acid rate of addition in described step 2 is 30g/min, and the temperature of described low-temp reaction is 60 DEG C.
The temperature of the high-temperature stirring in described step 3 is 90 DEG C.
The protective gas of the sealing protection sintering in described step 4 adopts nitrogen, and described sintering temperature is 500 DEG C.
The temperature of the aerated reaction in described step 5 is 80 DEG C, described aerated reaction gas flow rate 9mL/min, described exposure
Solid/liquid/gas reactions adopt nitrogen.
Constant temperature drying temperature in described step 6 is 70 DEG C, and coated area adopts 13mL/cm2.
Mixed gas in described step 7 adopt the mixed gas of methane and methylamine, and the content of described methylamine gas is
50%, the temperature of described reaction under high pressure is 85 DEG C, and pressure is 0.9MPa.
Photoconductive gain is tested：The photoconductive method of testing that film is carried out is that (Keithley is public using Keithley
Department) the measurement dark conductance of the film and conductance of illumination of source table, then calculate photoconductive gain with following equation：(the electricity of illumination
Lead dark conductance)/dark conductance.After testing, photoconductive gain reaches 106.
The foregoing is only one embodiment of the invention, be not intended to limit the present invention, all employing equivalents or equivalent transformation
The technical scheme that obtained of mode, all fall within protection scope of the present invention.
Claims (10)
1. a kind of doping type thin-film material with photoconductive effect is it is characterised in that its preparation process is as follows：
Step 1, ferrosilite is slowly added in hydrochloric acid, stirs, until filter residue after dissolving completely, obtains silicic acid ferrous solution；
Step 2, oxalic acid is slowly added to solution, and low temperature stirs 1-2h；
Step 3, coupling agent, ultraviolet absorber and antioxidant are separately added in solution, carry out the uniform 2-3h of high-temperature stirring, so
Add organic siliconresin stirring at normal temperature 1-2h afterwards, obtain mixed liquor；
Step 4, mixed liquor is coated in substrate surface, then carries out sealing protection sintering 3-8h；
Step 5, polyethylene terephthalate, tetrabutyl titanate and dispersant is put in absolute ethyl alcohol and stirs, so
Add bleeding agent, aerated reaction 2-5h afterwards, obtain coating liquid；
Step 6, coating liquid is coated uniformly on substrate surface, constant temperature drying 2-4h；
Step 7, the base material after drying is put into mixed gas inner high voltage reaction 4-6h, can get doping type film material after cooling
Material.
2. a kind of doping type thin-film material with photoconductive effect according to claim 1 is it is characterised in that described thin
The preparation formula of membrane material is as follows：
Ferrosilite 15-20 part, hydrochloric acid 30-50 part, oxalic acid 20-30 part, coupling agent 4-8 part, ultraviolet absorber 1-4 part, anti-oxidant
Agent 2-4 part, organic siliconresin 5-10 part, polyethylene terephthalate 3-5 part, tetrabutyl titanate 8-15 part, absolute ethyl alcohol
30-50 part, dispersant 1-3 part, bleeding agent 1-3 part.
3. a kind of doping type thin-film material with photoconductive effect according to claim 1 is it is characterised in that described idol
Connection agent adopts vinyltrimethoxy silane or VTES, and described ultraviolet absorber adopts septichen
Phenyl ester or 2,4-DihydroxyBenzophenone.
4. a kind of doping type thin-film material with photoconductive effect according to claim 1 is it is characterised in that described resist
Oxidant adopts dibutyl hydroxy toluene, and described dispersant adopts in polyvinylpyrrolidone, polyacrylamide or Tissuemat E
One kind.
5. a kind of doping type thin-film material with photoconductive effect according to claim 1 is it is characterised in that described ooze
Agent thoroughly adopts AEO.
6. a kind of doping type thin-film material with photoconductive effect according to claim 1 is it is characterised in that described step
Oxalic acid rate of addition in rapid 2 is 20-40g/min, and the temperature of described low-temp reaction is 50-70 DEG C, the high temperature in described step 3
The temperature of stirring is 80-100 DEG C.
7. a kind of doping type thin-film material with photoconductive effect according to claim 1 is it is characterised in that described step
The protective gas of the sealing protection sintering in rapid 4 adopts nitrogen, and described sintering temperature is 300-800 DEG C.
8. a kind of doping type thin-film material with photoconductive effect according to claim 1 is it is characterised in that described step
The temperature of the aerated reaction in rapid 5 is 70-100 DEG C, described aerated reaction gas flow rate 5-12mL/min, and described aerated reaction is adopted
Use nitrogen.
9. a kind of doping type thin-film material with photoconductive effect according to claim 1 is it is characterised in that described step
Constant temperature drying temperature in rapid 6 is 60-80 DEG C, and coated area adopts 10-15mL/cm2.
10. a kind of doping type thin-film material with photoconductive effect according to claim 1 is it is characterised in that described
Mixed gas in step 7 adopt the mixed gas of methane and methylamine, and the content of described methylamine gas is 30-60%, described high pressure
The temperature of reaction is 80-100 DEG C, and pressure is 0.7-1.3MPa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611037427.4A CN106449886B (en) | 2016-11-23 | 2016-11-23 | A kind of doping type thin-film material with photoconductive effect |
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|---|---|---|---|
| CN201611037427.4A CN106449886B (en) | 2016-11-23 | 2016-11-23 | A kind of doping type thin-film material with photoconductive effect |
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| Publication Number | Publication Date |
|---|---|
| CN106449886A true CN106449886A (en) | 2017-02-22 |
| CN106449886B CN106449886B (en) | 2017-12-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752297A (en) * | 2019-08-28 | 2020-02-04 | 电子科技大学 | Ultraviolet-absorbing organic molecule-doped ternary solar cell and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1087448A (en) * | 1992-11-28 | 1994-06-01 | 浙江大学 | Highly sensitive photoconductive film and preparation method thereof |
| US20090242020A1 (en) * | 2008-04-01 | 2009-10-01 | Seung-Yeop Myong | Thin-film photovoltaic cell, thin-film photovoltaic module and method of manufacturing thin-film photovoltaic cell |
| CN101550530A (en) * | 2009-04-03 | 2009-10-07 | 清华大学 | Prepare iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition method |
| CN102214722A (en) * | 2011-04-18 | 2011-10-12 | 中国石油大学(华东) | Palladium-doped carbon film/oxide/semiconductor material with photoconductive effect |
| CN102437204A (en) * | 2011-12-08 | 2012-05-02 | 北京精诚铂阳光电设备有限公司 | Film photovoltaic device |
-
2016
- 2016-11-23 CN CN201611037427.4A patent/CN106449886B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1087448A (en) * | 1992-11-28 | 1994-06-01 | 浙江大学 | Highly sensitive photoconductive film and preparation method thereof |
| US20090242020A1 (en) * | 2008-04-01 | 2009-10-01 | Seung-Yeop Myong | Thin-film photovoltaic cell, thin-film photovoltaic module and method of manufacturing thin-film photovoltaic cell |
| CN101550530A (en) * | 2009-04-03 | 2009-10-07 | 清华大学 | Prepare iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition method |
| CN102214722A (en) * | 2011-04-18 | 2011-10-12 | 中国石油大学(华东) | Palladium-doped carbon film/oxide/semiconductor material with photoconductive effect |
| CN102437204A (en) * | 2011-12-08 | 2012-05-02 | 北京精诚铂阳光电设备有限公司 | Film photovoltaic device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110752297A (en) * | 2019-08-28 | 2020-02-04 | 电子科技大学 | Ultraviolet-absorbing organic molecule-doped ternary solar cell and preparation method thereof |
| CN110752297B (en) * | 2019-08-28 | 2021-08-10 | 电子科技大学 | Ultraviolet-absorbing organic molecule-doped ternary solar cell and preparation method thereof |
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