CN103268902B - Monocrystalline off standard N-type silicon chip manufactures the method for solar battery sheet - Google Patents
Monocrystalline off standard N-type silicon chip manufactures the method for solar battery sheet Download PDFInfo
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- CN103268902B CN103268902B CN201310164476.4A CN201310164476A CN103268902B CN 103268902 B CN103268902 B CN 103268902B CN 201310164476 A CN201310164476 A CN 201310164476A CN 103268902 B CN103268902 B CN 103268902B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of method that monocrystalline off standard N-type silicon chip manufactures solar battery sheet, is design for the technical problem solving the more difficult making solar battery sheet of existing monocrystalline off standard N-type silicon chip.Its method step comprises cleaning, diffusion-sintering, dephosphorization silex glass, coated with antireflection film, secondary cleaning, making herbs into wool polishing, removes antireflective coating, again coated with antireflection film, silk screen printing, Fast Sintering, constant temperature extraction, power stepping, the N-type solar battery sheet of final obtained conversion efficiency 18%.Manufacturing process of the present invention is simple, and cost is low, not only realizes resource and makes full use of, energy-conserving and environment-protective, and is social creativity energy wealth, is suitable as the manufacture method of solar battery sheet, or the improvement of congenic method.
Description
Technical field
The present invention relates to the making of solar battery sheet, is a kind of method that monocrystalline off standard N-type silicon chip manufactures solar battery sheet.
Background technology
Solar battery sheet is the device directly light being converted to electric energy by photoelectric effect or Photochemical effects.The existing technology preparing solar battery sheet, as the application publication number CN101952889A that Chinese patent literature is published, March 2 2011 Shen Qing Publication day, application name is called " a kind of manufacture method of solar battery sheet ", it comprises making herbs into wool, cleaning, diffusion, edge insulation, dephosphorization silex glass, coated with antireflection film, silk screen printing, sintering step, in the process of coated with antireflection film, adopt the method for tubular type PECVD plated film, using graphite boat as silicon chip carrier, when coated with antireflection film, plasma ionizes and in the process deposited, changed by electric field strength between graphite boat plate, thus the thickness of the antireflective coating on cell piece surface changes, and present different colors, form the colored solar cell piece of monolithic different colours.This section of document discloses a kind of manufacture method utilizing silicon wafer to manufacture solar battery sheet, and can obtain the colored solar cell piece of different colours, but it does not openly utilize off standard N-type silicon chip to manufacture the method for solar battery sheet.There is quite a few expensive silicon chip not yet can be used effectively in the N-type silicon chip of existing manufacture solar cell, if using them as discarded object, then real is waste, therefore has a kind of method manufacturing solar cell for off standard N-type silicon chip to be designed, reaches the object that silicon chip makes full use of.
Summary of the invention
For overcoming above-mentioned deficiency, the object of the invention is to provide to this area the unattenuated monocrystal N type silicon chip of a kind of transfer ratio 18%, 25 years power to manufacture the method for solar battery sheet, make it solve the technical problem of the more difficult making solar battery sheet of monocrystalline off standard N-type silicon chip.Its objective is and to be achieved through the following technical solutions.
Monocrystalline off standard N-type silicon chip manufactures a method for solar battery sheet, and the main points of its technical scheme are that the method utilizes monocrystalline off standard N-type silicon chip waste material to manufacture solar battery sheet, and its method comprises the following steps:
One, off standard N-type silicon chip is carried out 450 DEG C ~ 550 DEG C vacuum furnace annealing in process.
Two, making herbs into wool cleaning, puts into temperature and is 80 DEG C ~ 85 DEG C and is mixed with 200L water and NaOH the solution that concentration is 1.2%, and add the making herbs into wool liquid of 0.3% by the described silicon chip after annealing in process.
Three, diffusion, the phosphorus atom concentration carrying out described silicon chip surface with phosphorus oxychloride diffusant under 830 DEG C ~ 900 DEG C high temperature strengthens formation N+ pole.
Four, dephosphorization silex glass, by chemical corrosion, puts into described silicon chip after hydrofluoric acid solution immersion makes it produce reaction and generates solubility network and thing hexafluorosilicic acid.
Five, coated with antireflection film, utilizes low temperature plasma to make energy source, is placed in by described silicon chip on the negative electrode of glow discharge under low pressure, utilizes glow discharge to make its temperature be raised to predetermined value, then pass into SiH
4and NH
3gas, through series reaction, forms solid-state antireflective coating at described silicon chip surface.
Six, secondary cleaning peracid, removes the Si that antireflective coating back side surrounding is formed
3h
4.
Seven, making herbs into wool polishing, silicon chip is put into the texturing slot that temperature is 80 DEG C ~ 85 DEG C, in groove be with 200L water to become with NaOH proportioning concentration be 4% alkaline solution, carry out polishing, the object of polishing is the dilution to non-diffusingsurface phosphorus atoms, reach insulation, polishing time is 200 seconds, and then removes antireflective coating with hydrofluoric acid.
Eight, coated with antireflection film again, process is identical with step 5.
Nine, silk screen printing, the graphic printing of design on substrate, is completed back surface field by the method for employing impression, back electrode, the making of positive gate line electrode, producing photogenerated current to draw, by sintering rear formation ohmic contact, electric current effectively being exported, front electrode silvery white metal paste, be printed as grid line shape, realize good contact, the full whole back side of back side aluminum metal slurry print, one is overcome the resistance that serial battery causes, and two is reduce back side compound.
Ten, sinter, silicon chip through silk screen printing can not directly use, need sintering furnace Fast Sintering, organic binder resin is burnt, remaining by the closely sealed silver electrode on silicon chip of nature of glass effect, when silver electrode and crystalline silicon reach eutectic temperature at high temperature, crystalline silicon atom is dissolved in silver electrode material in certain proportion and is gone, and forms ohmic contact, improves the parameter of the fill factor, curve factor of the open circuit voltage of cell piece, make it have resistance characteristic, to improve the transfer ratio of cell piece; Sintering furnace is provided with presintering, sintering, cooling down three phases.The object of presintering is that the polymer binder in slurry is decomposed, burn, this phase temperature slowly rises, silicon chip after the object sintered is through printing completes various physical-chemical reaction in sintered body, form resistive film structure, so just have resistance characteristic, the temperature in this stage reaches peak value; Cooling down, glass cools cured for solidification, makes resistive film structure fixedly be bonded on substrate.
11, constant temperature cooling, at 20 DEG C ~ 25 DEG C constant temperature passageway stoves, 20 minutes time.
12, last power test sorting, obtains the solar battery sheet of different capacity shelves.
Manufacturing process of the present invention is simple, cost is low, by secondary cleaning making herbs into wool, coated with antireflection film, off standard N-type silicon chip is produced the solar battery sheet that conversion efficiency is 18%, not only realize resource to make full use of, energy-conserving and environment-protective, and be social creativity energy wealth, be suitable as the manufacture method of solar battery sheet, or the improvement of congenic method.
Embodiment
The specific embodiment of the present invention is as follows.
1, silicon chip detection is hidden splits equipment: reach with the test of PL luminescence generated by light.
2, conventional chain-belt type 450 DEG C ~ 700 DEG C annealing furnaces carry out the annealing of off standard N-type silicon chip.
3, full-automatic temperature-controlling wool-weaving machine, operating temperature 80 DEG C ~ 85 DEG C, with the alkaline solution of naoh concentration 1.2%, then the Woolen-making liquid adding 0.3% carries out work.
4, Full-automatic temp-control diffusion furnace, the phosphorus atom concentration of silicon chip surface, under 820 DEG C ~ 900 DEG C high temperature, is strengthened formation N+ pole with phosphorus oxychloride diffusant, meets the diffusion uniformity of high sheet resistance battery by operating temperature.
5, automatic washing machine, puts into 12% hydrofluoric acid solution with chemical corrosion method by silicon chip and soaks removal phosphorosilicate glass, make it react rear generation solubility network and thing hexafluorosilicic acid.
6, fully-automatic thermostatic PECVD section of jurisdiction machine, carries out coated with antireflection film, utilizes low temperature plasma energy source to be placed on the negative electrode of glow discharge under low pressure, utilizes glow discharge to make its temperature be raised to predetermined value, then pass into appropriate SiH
4and NH
3gas is through some row reactions, and silicon chip surface forms solid-state antireflective coating.
7, secondary cleaning is carried out in automatic washing agent, first crosses hydrofluoric acid (12% concentration, 20 seconds time), removes the Si that antireflective coating back side surrounding is formed
3h
4, make antireflective coating insulating backside, prevent electric leakage.
8, fully-automatic thermostatic wool-weaving machine uses 4% sodium hydroxide in 80 DEG C ~ 85 DEG C texturing slots, the polishing of about 200 seconds operating time, after carry out removal antireflective coating with hydrofluoric acid again.
9, the same with the 6th road technique.
10, full-automatic inlet pressure screen process press, is printed on design configuration on substrate, completes back surface field, back electrode, the making of positive gate line electrode, producing photogenerated current to draw, by sintering rear formation ohmic contact, electric current effectively being exported, front electrode silvery white metal paste, be printed as grid line shape, realize good contact, the full whole back side of back side aluminum metal slurry print, one is overcome the resistance that serial battery causes, and two is reduce back side compound.Positive silver content 80% ~ 90%, back of the body silver content 30%, high temperature back of the body aluminium paste carries out automatic printing.
11, chain-type high temperature automatically burns stove, silicon chip through silk screen printing can not directly use, need sintering furnace Fast Sintering, organic binder resin is burnt, remaining by the closely sealed silver electrode on silicon chip of nature of glass effect, when silver electrode and crystalline silicon reach eutectic temperature at high temperature, crystalline silicon atom is dissolved in silver electrode material in certain proportion and is gone, form ohmic contact, improve the parameter of the fill factor, curve factor of the open circuit voltage of cell piece, make it have resistance characteristic, to improve the transfer ratio of cell piece; Sintering furnace is provided with presintering, sintering, cooling down three phases.The object of presintering is that the polymer binder in slurry is decomposed, burn, this phase temperature slowly rises, silicon chip after the object sintered is through printing completes various physical-chemical reaction in sintered body, form resistive film structure, so just have resistance characteristic, the temperature in this stage reaches peak value; Cooling down, glass cools cured for solidification, makes resistive film structure fixedly be bonded on substrate.
12, constant temperature cooling, with 20 DEG C ~ 25 DEG C constant temperature passageway stoves, 20 minutes time.
13, last power test sorting, carries out with high-accuracy full-automatic testing, sorting instrument, obtains the solar battery sheet of different capacity shelves.
Claims (1)
1. monocrystalline off standard N-type silicon chip manufactures a method for solar battery sheet, and it is characterized in that the method utilizes monocrystalline off standard N-type silicon chip waste material to manufacture solar battery sheet, its method comprises the following steps:
One, off standard N-type silicon chip is carried out 450 DEG C ~ 550 DEG C vacuum furnace annealing in process;
Two, making herbs into wool cleaning, puts into temperature and is 80 DEG C ~ 85 DEG C and is mixed with 200L water and NaOH the solution that concentration is 1.2%, and add the making herbs into wool liquid of 0.3% by the silicon chip after annealing in process;
Three, diffusion, the phosphorus atom concentration carrying out described silicon chip surface with phosphorus oxychloride diffusant under 830 DEG C ~ 900 DEG C high temperature strengthens formation N+ pole;
Four, dephosphorization silex glass, by chemical corrosion, puts into described silicon chip after hydrofluoric acid solution immersion makes it produce reaction and generates solubility network and thing hexafluorosilicic acid;
Five, coated with antireflection film, utilizes low temperature plasma to make energy source, is placed in by described silicon chip on the negative electrode of glow discharge under low pressure, utilizes glow discharge to make its temperature be raised to predetermined value, then pass into SiH
4and NH
3gas, through series reaction, forms solid-state antireflective coating at described silicon chip surface;
Six, secondary cleaning peracid, removes the Si that antireflective coating back side surrounding is formed
3h
4;
Seven, making herbs into wool polishing, silicon chip is put into the texturing slot that temperature is 80 DEG C ~ 85 DEG C, in groove be with 200L water to become with NaOH proportioning concentration be 4% alkaline solution, carry out polishing, the object of polishing is the dilution to non-diffusingsurface phosphorus atoms, reach insulation, polishing time is 200 seconds, and then removes antireflective coating with hydrofluoric acid;
Eight, coated with antireflection film again, process is identical with step 5;
Nine, silk screen printing, the graphic printing of design on substrate, is completed back surface field by the method for employing impression, back electrode, the making of positive gate line electrode, producing photogenerated current to draw, by sintering rear formation ohmic contact, electric current effectively being exported, front electrode silvery white metal paste, be printed as grid line shape, realize good contact, the full whole back side of back side aluminum metal slurry print, one is overcome the resistance that serial battery causes, and two is reduce back side compound;
Ten, sinter, silicon chip through silk screen printing can not directly use, need sintering furnace Fast Sintering, organic binder resin is burnt, remaining by the closely sealed silver electrode on silicon chip of nature of glass effect, when silver electrode and crystalline silicon reach eutectic temperature at high temperature, crystalline silicon atom is dissolved in silver electrode material in certain proportion and is gone, and forms ohmic contact, improves the parameter of the fill factor, curve factor of the open circuit voltage of cell piece, make it have resistance characteristic, to improve the transfer ratio of cell piece; Sintering furnace is provided with presintering, sintering, cooling down three phases; The object of presintering is that the polymer binder in slurry is decomposed, burn, this phase temperature slowly rises, silicon chip after the object sintered is through printing completes various physical-chemical reaction in sintered body, form resistive film structure, so just have resistance characteristic, the temperature in this stage reaches peak value; Cooling down, glass cools cured for solidification, makes resistive film structure fixedly be bonded on substrate;
11, constant temperature cooling, at 20 DEG C ~ 25 DEG C constant temperature passageway stoves, 20 minutes time;
12, last power test sorting, obtains the solar battery sheet of different capacity shelves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310164476.4A CN103268902B (en) | 2013-05-07 | 2013-05-07 | Monocrystalline off standard N-type silicon chip manufactures the method for solar battery sheet |
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|---|---|---|---|
| CN201310164476.4A CN103268902B (en) | 2013-05-07 | 2013-05-07 | Monocrystalline off standard N-type silicon chip manufactures the method for solar battery sheet |
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| CN103268902A CN103268902A (en) | 2013-08-28 |
| CN103268902B true CN103268902B (en) | 2015-08-19 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105702750A (en) * | 2014-11-28 | 2016-06-22 | 润峰电力有限公司 | Laser cladding welding method for full-aluminum back field solar cell back pole |
| CN111341877B (en) * | 2018-12-17 | 2024-04-16 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of double-sided PERC battery |
| CN112768566A (en) * | 2021-02-01 | 2021-05-07 | 上海理工大学 | Photocell preparation method based on molybdenum disulfide as carrier |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101982889A (en) * | 2010-10-11 | 2011-03-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of solar cell |
| CN102191542A (en) * | 2011-04-29 | 2011-09-21 | 张森 | Equipment and method for preparing high-purity directionally crystallized polysilicon |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101982889A (en) * | 2010-10-11 | 2011-03-02 | 山东力诺太阳能电力股份有限公司 | Manufacturing method of solar cell |
| CN102191542A (en) * | 2011-04-29 | 2011-09-21 | 张森 | Equipment and method for preparing high-purity directionally crystallized polysilicon |
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Granted publication date: 20150819 |