CN102102172A - Heterojunction thin film material with white light photovoltaic effect and preparation method thereof - Google Patents
Heterojunction thin film material with white light photovoltaic effect and preparation method thereof Download PDFInfo
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- CN102102172A CN102102172A CN2010105512120A CN201010551212A CN102102172A CN 102102172 A CN102102172 A CN 102102172A CN 2010105512120 A CN2010105512120 A CN 2010105512120A CN 201010551212 A CN201010551212 A CN 201010551212A CN 102102172 A CN102102172 A CN 102102172A
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- white light
- cobalt
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Abstract
The invention discloses a heterojunction thin film material with white light photovoltaic effect and a preparation method thereof in the technical fields of the thin film solar cell material and the photoelectric device material. An n-Si(100) substrate is provided with an alumina layer and a cobalt/carbon particle film in turn so as to for the heterojunction thin film material with white light photovoltaic effect. The preparation method is as follows: the laser pulse deposition method is adopted to deposit the alumina layer and the cobalt/carbon particle film on the Si substrate. When the photoelectric film of the invention is irradiated by a 100mW/cm<2>(AM 1.5) of simulated sun light source at the room temperature, the open-circuit photovoltage of the element is up to 447mV, the short-circuit photocurrent is 18.75mA/cm<2>, the filling factor is more than 39% and the photoelectric conversion efficiency is up to 3.3%. The material of the invention has superior performances, low price and simple preparation method, does not uses any toxic, inflammable or explosive substance and is an excellent visible light sensor material and potential photovoltaic device.
Description
Technical field
The invention belongs to thin-film solar cells material and photoelectric device material technology field, particularly a kind of heterogenous junction film material and preparation method thereof with white light photovoltaic effect.
Background technology
Energy shortage and environmental problem are more and more paid attention to, and photovoltaic generation receives much concern because of the luminous energy of sun power directly being converted to electric energy.Before the research of photovoltaic power generation technology started from more than 100 year.1839 French physicist Bq (A.E.Becqurel) be surprised to find that, invade the voltaic cell that solution constitutes with two metals, can produce extra voltaic electromotive force during illumination, he calls " photovoltaic effect " (photovoltaic effect) to this phenomenon.Semi-conductor P-N junction device photoelectric transformation efficiency in the sun is the highest, claims that usually this photovoltaic device is a solar cell.Rusop has prepared the adulterated amorphous carbon-film of B/silicon heterogenous solar cell by the method for PLD.
Advantages such as the amorphous carbon film material is various because of its preparation method, and material cheaply is easy to get, and is nontoxic, and the band gap adjustability is big become the strong candidate of photoconductive material.Namita Dutta Gupta, C.Longeaud, P.Chaudhuri, A.Bhaduri, S.Vignoli, Journal of Non-Crystalline Solids, 2006,352:1307-1309 has reported the method for preparing the amorphous carbon film photoconductive material with plasma enhanced chemical vapor deposition method (PECVD).This film is very faint to the response of visible light, but very sensitive to the response of UV-light, is the potential ultraviolet light detector.Document Hare Ram Aryal, Sudip Adhikari, Dilip ChandraGhimire, Golap Kalita, Masayoshi Umeno, Diamond﹠amp; Related Materials, 2008,17:680-683 and document Prakash R.Somani, Savita P.Somania, M.Umeno, Physica E, 2008,40:2783-2786 has reported the method for using microwave surface wave plasma chemical gaseous phase depositing process to prepare carbon film material.A little carbon film materials all are sedimentary with gas phase process, and a large amount of hydrocarbon gas and ammonias etc. of using are very high to preparation technology's environmental requirement and safety requirements in the preparation process.
Summary of the invention
The objective of the invention is to prepare a kind ofly has response to visible light at ambient temperature, can produce the heterogenous junction film material (Co of obvious photovoltaic effect
2-C
98/ Al
2O
3/ Si) and preparation method thereof.
Heterogenous junction film material with white light photovoltaic effect is provided with alumina layer and cobalt carbon granule film successively on n-Si (100) substrate, the atomic ratio of cobalt and carbon is 2: 98 in the described cobalt carbon granule film, forms the Co with white light photovoltaic effect
2-C
98/ Al
2O
3/ Si heterogenous junction film material.
Described alumina layer thickness can be 2～10 nanometers.
Described cobalt carbon granule film thickness can be 60～120 nanometers.
Preparation method with heterogenous junction film material of white light photovoltaic effect, this method comprises the steps:
Al with n-Si (100) substrate, purity＞99.99%
2O
3It is indoor that target and cobalt carbon target are put into the vacuum plating of pulsed laser deposition equipment, and vacuum at the bottom of the back of the body in the coating chamber is evacuated to less than 4 * 10
-4Behind the Pa, heated substrate is to 300～400 ℃ of depositing temperatures, the pulse laser that produces with the KrF laser apparatus bombards the aluminum oxide target again, beginning deposition of aluminium oxide film, deposition maintains in-situ annealing on the depositing temperature after finishing, again the pulse laser bombardment cobalt carbon target that produces with the KrF laser apparatus, at same temperature deposit cobalt carbon granule film, after deposition finished, sample naturally cooled to room temperature, obtains having the heterogenous junction film material of white light photovoltaic effect.
Described cobalt carbon target is to be preparation in 2: 98 with the cobalt powder of purity＞99.99% and carbon dust by the atomic ratio of cobalt and carbon, mixes the cobalt carbon target that hot repressing becomes then through wet ball grinding.
Preferred 10～20min of described in-situ annealing time.
Beneficial effect of the present invention is:
1, the material cost of Cai Yonging is low, and some samples at room temperature have tangible photovoltaic effect.The sedimentary Co of PLD
2-C
98/ Al
2O
3/ Si heterogenous junction film material, cobalt carbon film thickness are the p N-type semiconductorN between 60～120 nanometers, alumina layer thickness is about 2～10 nanometers.The p-n junction interface of PLD deposition preparation is very smooth, and interface atom mutual diffusion is by thin layer Al
2O
3Be effectively suppressed.This optoelectronic film is under the simulated solar light source irradiation of room temperature, 100mW/cm2 (AM 1.5), and the open circuit photovoltage of device reaches 447mV, short-circuit photocurrent is 18.75mA/cm
2, packing factor is more than 39%, photoelectric transformation efficiency reaches 3.3%.Adopt this material to have superior performance, cheap, prepare characteristics such as simple, and in preparation process, do not use any poisonous flammable and explosive substance, be the photovoltaic device of a kind of excellent visible light sensor material and potentialization.
2, adopt the pulsed laser deposition method to prepare film, method is simple, process stabilizing, and controllability is good, and is pollution-free, has very high preparation efficiency.
Description of drawings
Fig. 1: Co
2-C
98/ Al
2O
3The structure of/Si heterojunction structure thin-film material and photovoltaic performance test synoptic diagram thereof;
Fig. 2: Co
2-C
98/ Al
2O
3The room temperature I-V characteristic of/Si heterojunction structure thin-film material (light and unglazed according to situation is arranged)
Number in the figure: 1-n-Si (100) substrate; 2-aluminum oxide (Al
2O
3) layer; 3-cobalt carbon (Co
2-C
98) membrana granulosa; The 4-metal electrode.
Embodiment
The invention will be further described below in conjunction with accompanying drawing:
The present invention is a kind of Co with white light photovoltaic effect with the preparation of pulsed laser deposition method
2-C
98/ Al
2O
3/ Si heterogenous junction film material.Concrete preparation method is: earlier with Si (100) substrate of handling well, the Al of purity＞99.99%
2O
3It is indoor that monocrystalline target (commercial target) and cobalt carbon target are put into the vacuum plating of PLD equipment, with mechanical pump and molecular pump with the back of the body in the coating chamber at the bottom of vacuum be evacuated to 4 * 10
-4Behind the Pa, heated substrate to 300 ℃, use KrF laser apparatus (Lambda Physics LPX205 again, 248nm, 25ns FWHM) energy of Chan Shenging is the pulsed bombardment aluminum oxide target of 360mJ, and starting the motor of rotary target material and substrate simultaneously, beginning deposition of aluminium oxide layer film maintains (300 ℃) annealing 10min on the depositing temperature after the alumina layer thin film deposition finishes; Then by laser pulse bombardment cobalt carbon target, (300 ℃) deposit cobalt carbon granule film under same temperature.After deposition finished, sample naturally cooled to room temperature.Used cobalt carbon target is to be preparation in 2: 98 with the cobalt powder of purity＞99.99% and carbon dust (carbon dust employing Graphite Powder 99) by the atomic ratio of cobalt and carbon, mixes through wet ball grinding then, and the cobalt carbon target that hot repressing becomes is so the cobalt carbon granule film of gained is Co
2-C
98Membrana granulosa.Other processing parameters in the deposition process also comprise: target-substrate distance is 40mm, and the bundle spot size of laser beam on target is about 2 * 4mm, and laser repetition rate is controlled at 1～6Hz.Substrate for use is n type Si (100) in the experiment, and resistivity is 0.55～0.8 Ω cm, and size is 10 * 5 * 0.5mm.Before the experiment, substrate is put into acetone and alcohol heating ultrasonic cleaning 2 to 3 times successively, carry out corrosion treatment with the HF acid solution that dilutes again.
Prepared Co
2-C
98/ Al
2O
3Each tunic of/Si heterogenous junction film material sample is thick to be measured by TEM (JEM-2011); Co
2-C
98Membrana granulosa thickness is the p N-type semiconductorN between 60～120 nanometers, alumina layer thickness is between 2～10 nanometers.The IV performance is measured by the Keithley2400 current voltmeter with vertical survey method about the comb electrode; Light source is by 100mW/cm
2The simulated solar light source of (AM 1.5) provides.This patent is only with Co
2-C
98Membrana granulosa thickness 80 nanometers, aluminum oxide thickness are that the sample of 4 nanometers is an example, provide the measuring result (Fig. 2) of the schematic diagram (Fig. 1) and the photovoltaic performance of its room temperature photovoltaic performance test.
Maintain after the alumina layer thin film deposition finishes on the depositing temperature (300 ℃) annealing 20min, all the other are identical with embodiment 1.
Except Co
2-C
98/ Al
2O
3Co in the/Si heterojunction structure thin-film material
2-C
98Membrana granulosa thickness is 100 nanometers, and alumina layer thickness is outside 8 nanometers, and all the other are identical with embodiment 1.
Except Co
2-C
98/ Al
2O
3Co in the/Si heterojunction structure thin-film material
2-C
98Membrana granulosa thickness is 80 nanometers, and alumina layer thickness is outside 2 nanometers, and all the other are identical with embodiment 1.
Except Co
2-C
98/ Al
2O
3Co in the/Si heterojunction structure thin-film material
2-C
98Membrana granulosa thickness is 120 nanometers, and alumina layer thickness is outside 6 nanometers, and all the other are identical with embodiment 1.
Embodiment 6
Except the alumina layer depositing temperature is 330 ℃, deposition finishes back (330 ℃) annealing 15min on depositing temperature, Co
2-C
98The membrana granulosa depositing temperature is outside 330 ℃, and all the other are identical with embodiment 1.
Embodiment 7
Except the alumina layer depositing temperature is 360 ℃, deposition finishes back (360 ℃) annealing 10min on depositing temperature, Co
2-C
98The membrana granulosa depositing temperature is outside 360 ℃, and all the other are identical with embodiment 1.
Claims (6)
1. have the heterogenous junction film material of white light photovoltaic effect, it is characterized in that: be provided with alumina layer and cobalt carbon granule film on n-Si (100) substrate successively, the atomic ratio of cobalt and carbon is 2: 98 in the described cobalt carbon granule film, forms the Co with white light photovoltaic effect
2-C
98/ Al
2O
3/ Si heterogenous junction film material.
2. the heterogenous junction film material with white light photovoltaic effect according to claim 1 is characterized in that: described alumina layer thickness is in 2～10 nanometers.
3. the heterogenous junction film material with white light photovoltaic effect according to claim 1 is characterized in that: described cobalt carbon granule film thickness is in 60～120 nanometers.
4. the preparation method who has the heterogenous junction film material of white light photovoltaic effect is characterized in that this method comprises the steps:
Al with n-Si (100) substrate, purity＞99.99%
2O
3It is indoor that target and cobalt carbon target are put into the vacuum plating of pulsed laser deposition equipment, and vacuum at the bottom of the back of the body in the coating chamber is evacuated to less than 4 * 10
-4Behind the Pa, heated substrate is to 300～400 ℃ of depositing temperatures, the pulse laser that produces with the KrF laser apparatus bombards the aluminum oxide target again, beginning deposition of aluminium oxide film, deposition maintains in-situ annealing on the depositing temperature after finishing, again the pulse laser bombardment cobalt carbon target that produces with the KrF laser apparatus, at same temperature deposit cobalt carbon granule film, after deposition finished, sample naturally cooled to room temperature, obtains having the heterogenous junction film material of white light photovoltaic effect.
5. the preparation method with heterogenous junction film material of white light photovoltaic effect according to claim 5, it is characterized in that: described cobalt carbon target is to be preparation in 2: 98 with the cobalt powder of purity＞99.99% and carbon dust by the atomic ratio of cobalt and carbon, mix the cobalt carbon target that hot repressing becomes then through wet ball grinding.
6. the preparation method with heterogenous junction film material of white light photovoltaic effect according to claim 5 is characterized in that: the in-situ annealing time is 10～20 minutes.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569515A (en) * | 2012-01-05 | 2012-07-11 | 北京工业大学 | Preparation method for near-infrared quantum clipping film of nano pyramid light trapping structure |
| CN103255369A (en) * | 2013-06-07 | 2013-08-21 | 上海超导科技股份有限公司 | Simplified baffle layer suitable for IBAD-MgO (ion beam assisted deposition-magnesium oxide) growth on metal substrate and preparation method thereof |
| CN113466977A (en) * | 2021-07-13 | 2021-10-01 | 宁波工程学院 | Surface plasmon narrow-band comb filter |
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| JP2000106446A (en) * | 1998-09-29 | 2000-04-11 | Toshiba Corp | Substrate for solar cell, solar cell and production thereof |
| CN1267745A (en) * | 2000-04-07 | 2000-09-27 | 上海交通大学 | Preparation of solar energy photovoltaic material-carbon film |
| CN101273238A (en) * | 2005-08-02 | 2008-09-24 | 桑斯翠普有限公司 | Nickel-alumina coated solar absorbers |
| CN101550530A (en) * | 2009-04-03 | 2009-10-07 | 清华大学 | Prepare iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition method |
| US20090267060A1 (en) * | 2005-11-02 | 2009-10-29 | The Regents Of The Univerisity Of Michigan | Polymer wrapped carbon nanotube near-infrared photoactive devices |
-
2010
- 2010-11-18 CN CN2010105512120A patent/CN102102172B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000106446A (en) * | 1998-09-29 | 2000-04-11 | Toshiba Corp | Substrate for solar cell, solar cell and production thereof |
| CN1267745A (en) * | 2000-04-07 | 2000-09-27 | 上海交通大学 | Preparation of solar energy photovoltaic material-carbon film |
| CN101273238A (en) * | 2005-08-02 | 2008-09-24 | 桑斯翠普有限公司 | Nickel-alumina coated solar absorbers |
| US20090267060A1 (en) * | 2005-11-02 | 2009-10-29 | The Regents Of The Univerisity Of Michigan | Polymer wrapped carbon nanotube near-infrared photoactive devices |
| CN101550530A (en) * | 2009-04-03 | 2009-10-07 | 清华大学 | Prepare iron doped carbon membrane material with white light photoconductive effect by pulse laser deposition method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569515A (en) * | 2012-01-05 | 2012-07-11 | 北京工业大学 | Preparation method for near-infrared quantum clipping film of nano pyramid light trapping structure |
| CN102569515B (en) * | 2012-01-05 | 2013-11-06 | 北京工业大学 | Preparation method for near-infrared quantum clipping film of nano pyramid light trapping structure |
| CN103255369A (en) * | 2013-06-07 | 2013-08-21 | 上海超导科技股份有限公司 | Simplified baffle layer suitable for IBAD-MgO (ion beam assisted deposition-magnesium oxide) growth on metal substrate and preparation method thereof |
| CN113466977A (en) * | 2021-07-13 | 2021-10-01 | 宁波工程学院 | Surface plasmon narrow-band comb filter |
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