CN101548394A - 光伏模组及其应用 - Google Patents

光伏模组及其应用 Download PDF

Info

Publication number
CN101548394A
CN101548394A CNA2007800451610A CN200780045161A CN101548394A CN 101548394 A CN101548394 A CN 101548394A CN A2007800451610 A CNA2007800451610 A CN A2007800451610A CN 200780045161 A CN200780045161 A CN 200780045161A CN 101548394 A CN101548394 A CN 101548394A
Authority
CN
China
Prior art keywords
photovoltaic module
solar cell
bypass diode
member unit
support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2007800451610A
Other languages
English (en)
Other versions
CN101548394B (zh
Inventor
安德里亚·贝特
约阿希姆·尧斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of CN101548394A publication Critical patent/CN101548394A/zh
Application granted granted Critical
Publication of CN101548394B publication Critical patent/CN101548394B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)

Abstract

本发明涉及一种光伏模组，其包括至少两个相互连接且安置在一个电绝缘基体上的构件单元组(SCA)，每个构件单元组均包括一个安置在导热导电的支承部上的太阳能电池和一个与太阳能电池间隔开的旁路二极管，所述太阳能电池和所述旁路二极管通过电导体相互接触，其中，旁路二极管具有与太阳能电池相反的极性，太阳能电池和旁路二极管通过具有传导能力的连接层被安置到具有传导能力的支承部上。

Description

光伏模组及其应用
技术领域
本发明涉及光伏模组，其特征在于在支承基板上的太阳能电池的特殊串联连接。为了能得到这样的串联连接，必须有绝缘层，该绝缘层在本发明中通过二极管来实现。同时，在该光伏模组中，该二极管起到了保护二极管或旁路二极管的作用。因此，在这种情况下，两种功能被整合在一个装置中，这导致显著的成本优势。
背景技术
在光电技术中，通常将多个太阳能电池组合成较大的单元(阵列或模组)。此时在一个阵列中，在多个太阳能电池之间或串联，或并联。为此，必须在相邻的两个太阳能电池之间形成导电连接。在现有技术中还公开了，在模组或者阵列中采用旁路二极管来保护太阳能电池。这是必需的，这是因为可能出现以下情况，即，在一个模组中的个别太阳能电池承受处于截止区的电压，处于截止区的电压也许会导致太阳能电池损坏。
一个光电技术的特殊领域就是所谓的“聚光光电技术”，其中通过光学系统(例如透镜、反射镜)来聚集太阳光，将聚集后的光束照射到较小(视设备类型而定)的太阳能电池上。由于光的聚集，所以出现必须散走的局部热。根据系统的不同，散热以被动方式或者通过主动冷却(如利用水)来实现。
在这样的聚光模组中串联连接太阳能电池的现有技术由J.Jaus公开(J.Jaus，U.Fleischfresser，G.Pheharz，F.Dimroth，H.Kerchenmueller，A.W.Bett，“Heat sinK-substrates for automated assembly ofconcentrator-modules”，21世纪欧洲光电技术会议和演示，德累斯顿，2006年9月，待公开)。在此公开文献中详细说明了所谓的“预浸处理技术”以及带有镀金线路板的铜片的使用。不过，这种已知技术具有以下缺点：
—按照技术的不同，需要较多的单独零件，对此，在生产及库存和生产物流方面造成费用上升；
—在组装这些单独零件时遇到各种各样的工艺步骤，如：“表面准备”、“连接材料(胶、焊料)的涂覆”、“抓取和定位零件”、“粘结层固化”或者“执行焊接作业”，通常也还伴随有其它附加工艺步骤；
—大量工艺步骤增加了节拍时间(Taktzeit)，降低了生产线生产量，增加了材料成本。这样，最终造成高昂成本；
—一些步骤(例如使得各个太阳能电池芯片之间建立接触)造成高昂的作业成本(焊接作业)和管理成本(Handlingkosten)；
—在实践中事实证明，预浸处理技术容易出现下列故障，即，在生产中出现会导致短路的毛刺。这造成必须进行复杂的检测，并且使得单独的预浸处理比较昂贵。
可是，必须成本划算地制造光伏模组。为了能实现较低成本，待组装零件的数量必须少，同时零件本身的成本应该划算。一个零件担负起多个功能尤其有助于降低成本。
发明内容
因此，本发明的任务是提供一种光伏模组，其结构简单且成本低廉，同时在串联连接时能实现可靠的工作。
通过具有权利要求1特征的光伏模组完成该任务。此外，从属权利要求示出了优选实施形式。权利要求20说明了应用可能性。
本发明提出了一种光伏模组，其包括至少两个相互连接的、安置在一个电绝缘基体上的构件单元组(SCA)，每个构件单元组均具有一个安置在具有传导能力的支承部上的太阳能电池和一个与所述太阳能电池间隔开的旁路二极管，所述太阳能电池和所述旁路二极管通过电导体相互接触，其中，旁路二极管具有与所述太阳能电池相反的极性，所述太阳能电池和所述旁路二极管通过具有传导能力的连接层安置在具有传导能力的支承部上。
本发明的光伏模组能够通过其特殊设计担负起多项功能，而在现有技术中为此需要多个不同零件。
这样一来获得了大量优点，例如：
—在工作准备阶段、库存和组装时的较低的物流成本；
—较低的材料用量；
—较低的设备和人员开支；
—较低成本。
在实际的聚光光电池系统(Konzentrator-System)中，例如在Flatcon系统(参见J.Jaus的公开文献)中，热通过金属冷却体被传导走。对于安装太阳能电池来说，此时背面和正面触点均必须以彼此绝缘的方式被接触，以避免太阳能电池短路。为此，采用了非导电的中间层，但该中间层不应该限制传热。
现在，本发明的光伏模组的特点在于，其不仅允许以通过旁路二极管保护的方式将电池连接成阵列，而且允许最佳的传热。原则上，由此可以在同时需要导电连接以及良好散热的各个系统(例如甚至是卫星阵列)中，采用本发明的光伏模组。
此外，在本发明的光伏模组中，构件单元组的导电支承部最好是平面的、由铜、含铜合金、镀锌钢和/或铝制成的支承部。此外，导电支承部具有20至1000μm的厚度是有利的。
另外，具有传导能力的连接层优选由焊料和/或导电胶形成。不过，本发明也包含现有技术公开的、用于产生具有传导能力的连接的所有可能方式。
另一个优选实施形式规定，在具有传导能力的支承部上，至少在旁路二极管和/或太阳能电池的区域内涂覆有金层、镍层、钛层和/或钯层。
该实施方式的优点在于，由此将改善与各导体的接触。以上描述的附加涂层因此也可以被涂覆在其中旁路二极管导体与下一个构件单元组接触的支承部区域内。
在本发明中，可以采用任何太阳能电池作为太阳能电池，但优选III-V族半导体电池或Si太阳能电池。此时，如在现有技术中知道的那样，优选单片太阳能电池。此外，本发明也包括多结太阳能电池。
同样，所有由现有技术公开的二极管均可以被用于实施本发明。对于旁路二极管有利的二极管是平面型pn型半导体二极管。
此外，二极管表面优选由金层、镍层、银层、钛层、钯层和/或铝层构成。
尤其有利的是，连接太阳能电池和旁路二极管的导体是由金、铝或铜构成的引线，其中铝还可能含有0—2重量％的硅和/或0—2重量％的镁。
此外，对本发明重要的是，至少两个构件单元组通过导体连接，该导体从第一构件单元组的旁路二极管延伸到第二构件单元组的导电支承部。此外，该导体仍然尤其是由金、铝或铜构成的引线，其中铝可能含有0—2重量％的硅和/或0—2重量％的镁。
至于太阳能电池在导电支承部上的几何布置，任何一种定位都是可行的，尤其有利的是，太阳能电池基本居中地设置在金属的支承部上。
同样，金属的支承部不局限于特定实施形式。金属的支承部优选为多边形，最好是矩形。其它优选形状例如是六边形结构，它们能象四边形或者矩形实施方式那样实现节约空间的布置形式。
旁路二极管能安置在金属的支承部的任何地方上。旁路二极管优选安置在太阳能电池的附近。距太阳能电池的距离例如为0.5至50毫米，优选1至10毫米。
原则上可以相互连接任何数量的、最多达1000个构件单元组。优选连接40至200个电池。
绝缘基体可以由任何一种绝缘材料制成。该材料最好选自玻璃板或者涂有绝缘介电层的金属板。绝缘介电层的厚度此时优选为0.05至0.1毫米，而绝缘基体的厚度优选为0.1至5毫米。
按照本发明，光伏模组尤其用在高聚光光伏模组中。
如上所述，本发明的光伏模组的特点是，只需要简单的低成本零件，例如铜片、面接触的二极管、和太阳能电池。本发明的特点在于，连接光伏模组所需要的旁路二极管，在担负起绝缘接触层功能的同时，还具有突出的传热效果。该特性防止了基于线路板材料的接触垫被焦化，所述焦化曾经在实地试验中被观察到。这是由光伏模组在跟踪单元上的失焦位置(“off-point”Stellung)造成的。在此情况下(系统功能故障)，光不是聚焦在太阳能电池上，而是聚焦在光伏模组中的不确定部位上。这种功能故障可能出现在现实中，因而也在IEC—NORM“IEC 62108 Draft 8d”的“Concentrator photovoltaic(CPV)modules and assemblies-designqualification and type approval”中检验了。聚焦光束例如可能照射到线路板的切割边棱上。由于能量密度高，所以出现了线路板有机材料的烧毁，这不利地影响了作为绝缘层的功能。如果旁路二极管作为接触垫，则没有有机材料并且热将通过Si二极管被很好地传导走。因此将明显减少故障失效。另外，可以省掉线路板本身，这又降低了成本。
因此，本发明的主题允许构成基于简单铜板的构件组。与在介绍现有技术时说明的预浸处理技术相比，通过本发明的结构将成本低廉地实现连接。以下汇总了本发明光伏模组的优点。
—太阳能电池背面直接在冷却体上的电接触允许良好的热耦合。
—太阳能电池的正面触点被连接到面接触的旁路二极管。
—旁路二极管的背面触点直接在铜板上接触，这允许良好地传导散热。
—电绝缘功能将通过旁路二极管的pn结保证，这无需使用有机材料。
—太阳能电池构件组的制造需要尽量少的部件，这在制造中得到了高产量。
—在系统出现功能故障(失焦)时仍然保持功能性，这减少了聚光光电池系统的故障失效。
因而，本发明的解决方案允许将多个功能集成在一个构件中，由此得到了集成中常见的(成本)优势，如：工艺步骤更少，材料用量更少等。
附图说明
以下，结合附图来详细说明本发明，但本发明不应被局限于特定的特征。其中：
图1表示按照本发明的光伏模组结构；
图2示意表示具有按照现有技术的线路板技术的光伏模组。
具体实施方式
图1表示本发明布线连接的典型结构。在支承基板1(如铜)上安置有电子元件2(如太阳能电池)。太阳能电池2的背面是通过导电导热连接部3(如焊料或银导电胶)连接的。电子元件2的正面例如通过键合技术或焊接技术与导线4接触。此时，导线长度是有限的并且连接到接触垫5，接触垫5在朝向支承基板1的方向上是绝缘的。对于本发明，接触垫5由一个平面型二极管构成，其与太阳能电池2相比有相反的极性。这些元件1—5的整体被称为构件单元组(SCA)。在按照图1的实施方式中，在支承基板1上还安置有Au/Ni镀层6、7。它们用于改善接触。多个构件单元组可以安置在一个电绝缘基体例如玻璃板上(在此未示出)。这些构件单元组(SCA)例如通过焊接引线9或者粗丝键合技术从接触垫表面5被连至构件单元组(SCA)的下一个支承基板。通过这种布置，这些构件单元组(SCA)被串联起来。在每个构件单元组中，作为接触垫的并联的旁路二极管5保护太阳能电池2不受可能有的反向载荷()的损坏。
在图2中示出了从现有技术中知道的光伏模组结构。
在这里，支承基板1由1毫米厚的铜板构成，其主要用于太阳能电池背面的传热和导电连接。在铜板1上安置有薄的环氧树脂浸润玻璃纤维垫层，作为介电层8。在介电层8上又设有铜箔层9，铜箔层9负责太阳能电池正面触点的导电连接。上铜箔层9此时还具有镍层7和金层6。为了保证良好的传热，需要将太阳能电池2和旁路二极管5直接安置到铜基层上。在此，与导电的支承基板1的热接触仍通过导热焊料3来完成。与本发明不同，在如图2所示的现有技术中公开的光伏模组中太阳能电池2没有通过引线4直接与旁路二极管5相连，而导电接触的建立是通过设置在支承基板1上的结构10实现的。同样，这些光伏模组经由触点9的相互导电连接不是直接从旁路二极管开始，而总是间接地经由结构10来完成。因此，总之得到了一种复杂得多的光伏模组结构，这对生产工艺和制造成本有不利影响。通过如图1所示的明显更简单的本发明光伏模组结构可以避免这些缺点。
通过所述的本发明主题，可以明显加速制造过程，采用更少的构件并且能明显提高可靠性。总之，由此能节约可观的成本。

Claims (20)

1、一种光伏模组，其包括至少两个相互连接且安置在一个电绝缘基体上的构件单元组(SCA)，每个构件单元组均包括一个安置在导热导电的支承部上的太阳能电池和一个与所述太阳能电池间隔开的旁路二极管，所述太阳能电池和所述旁路二极管通过电导体相互接触，其特征在于，所述旁路二极管具有与所述太阳能电池相反的极性，并且所述太阳能电池和所述旁路二极管通过具有传导能力的连接层被安置到具有传导能力的所述支承部上。
2、根据权利要求1所述的光伏模组，其特征在于，所述构件单元组的导电的所述支承部是由铜、含铜合金、镀锌钢和/或铝构成的平面支承部。
3、根据权利要求2所述的光伏模组，其特征在于，具有传导能力的所述支承部具有20至1000μm的厚度。
4、根据权利要求1至3中至少一项所述的光伏模组，其特征在于，所述具有传导能力的连接层由焊料和/或导电胶形成。
5、根据权利要求1至4中至少一项所述的光伏模组，其特征在于，在所述具有传导能力的支承部上，至少在所述旁路二极管和/或所述太阳能电池的区域内涂覆有金层、镍层、钛层和/或钯层。
6、根据权利要求1至5中至少一项所述的光伏模组，其特征在于，所述太阳能电池是III-V族半导体太阳能电池或硅太阳能电池。
7、根据权利要求6所述的光伏模组，其特征在于，所述光伏模组是单片太阳能电池。
8、根据权利要求1至7中至少一项所述的光伏模组，其特征在于，所述旁路二极管是平面型pn型半导体二极管。
9、根据权利要求1至8中至少一项所述的光伏模组，其特征在于，所述二极管的表面是金、镍、银、钛、钯和/或铝表面。
10、根据权利要求1至9中至少一项所述的光伏模组，其特征在于，连接所述太阳能电池和所述旁路二极管的所述导体是由金、铝或铜制成的引线。
11、根据权利要求1至10中至少一项所述的光伏模组，其特征在于，所述至少两个构件单元组的连接是通过导体实现的，所述导体从第一构件单元组的旁路二极管通向第二构件单元组的具有传导能力的支承部。
12、根据权利要求11所述的光伏模组，其特征在于，所述导体是由金、铝或铜制成的引线。
13、根据权利要求10至12中至少一项所述的光伏模组，其特征在于，所述导体是由含有0到2重量％的Si和/或0到2重量％的Mg的铝制成的引线。
14、根据权利要求1至13中至少一项所述的光伏模组，其特征在于，所述太阳能电池基本居中地设置在金属的支承部上。
15、根据权利要求14所述的光伏模组，其特征在于，所述金属的支承部是多边形的，优选是矩形的。
16、根据权利要求1至15中至少一项所述的光伏模组，其特征在于，2至1000个构件单元组串联连接。
17、根据权利要求1至16中至少一项所述的光伏模组，其特征在于，所述绝缘基体是玻璃板，或是涂覆有绝缘介电层的金属板。
18、根据权利要求17所述的光伏模组，其特征在于，所述绝缘介电层的厚度为0.05至0.1mm。
19、根据权利要求1至18中至少一项所述的光伏模组，其特征在于，所述绝缘基体的厚度为0.1至5mm。
20、根据权利要求1至19中至少一项所述的光伏模组在高聚光光伏模组中的应用。
CN2007800451610A 2006-12-05 2007-12-05 光伏模组及其应用 Active CN101548394B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP06025105A EP1930954B1 (de) 2006-12-05 2006-12-05 Photovoltaisches Modul und dessen Verwendung
EP06025105.5 2006-12-05
PCT/EP2007/010563 WO2008068006A1 (de) 2006-12-05 2007-12-05 Photovoltaisches modul und dessen verwendung

Publications (2)

Publication Number Publication Date
CN101548394A true CN101548394A (zh) 2009-09-30
CN101548394B CN101548394B (zh) 2011-06-15

Family

ID=38016503

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800451610A Active CN101548394B (zh) 2006-12-05 2007-12-05 光伏模组及其应用

Country Status (9)

Country Link
US (1) US7977567B2 (zh)
EP (1) EP1930954B1 (zh)
KR (1) KR101426972B1 (zh)
CN (1) CN101548394B (zh)
AT (1) ATE438201T1 (zh)
DE (1) DE502006004401D1 (zh)
ES (1) ES2327864T3 (zh)
PT (1) PT1930954E (zh)
WO (1) WO2008068006A1 (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102782876A (zh) * 2010-02-25 2012-11-14 索泰克太阳能公司 太阳能电池组件i
CN103392239A (zh) * 2011-02-28 2013-11-13 弗兰霍菲尔运输应用研究公司 光伏模块及其制造方法
CN103560158A (zh) * 2013-11-05 2014-02-05 深圳市昂特尔太阳能投资有限公司 一种边侧型高倍聚光太阳能热电分离接收器
CN103563092A (zh) * 2011-02-24 2014-02-05 索泰克太阳能公司 用于聚光器光伏模块的太阳能电池阵列
CN110707110A (zh) * 2013-02-15 2020-01-17 瑞吉恩资源有限公司 电池模块

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106449805B (zh) * 2009-02-09 2019-03-12 艾克斯瑟乐普林特有限公司 集中器型光电（cpv）模块、接收器和子接收器及其形成方法
RU2395136C1 (ru) 2009-06-15 2010-07-20 Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН Фотоэлектрический модуль
KR100976583B1 (ko) * 2010-02-03 2010-08-17 솔라비토(주) 태양광 발전장치
EP2362432B1 (en) * 2010-02-25 2017-06-07 Saint-Augustin Canada Electric Inc. Solar cell assembly
US20120295395A1 (en) * 2010-11-17 2012-11-22 E.I. Du Pont De Nemours And Company Method for producing an array of thin-film photovoltaic cells having a totally separated integrated bypass diode associated with a plurality of cells and method for producing a panel incorporating the same
US8563347B2 (en) * 2010-11-17 2013-10-22 E I Du Pont De Nemours And Company Method for producing a thin-film photovoltaic cell having an etchant-resistant electrode and an integrated bypass diode and a panel incorporating the same
US8604330B1 (en) 2010-12-06 2013-12-10 4Power, Llc High-efficiency solar-cell arrays with integrated devices and methods for forming them
RU2475888C1 (ru) * 2011-08-02 2013-02-20 Российская Федерация, От Имени Которой Выступает Министерство Промышленности И Торговли Российской Федерации Конструкция фотоэлектрического модуля
FR2983346B1 (fr) * 2011-11-25 2016-12-09 Soitec Silicon On Insulator Procede de prevention d'une panne electrique dans un empilement de couches semi-conductrices, cellule photovoltaïque a concentration a substrat mince, et assemblage de cellule solaire
US8581242B2 (en) * 2012-02-21 2013-11-12 Atomic Energy Council—Institute of Nuclear Energy Research Apparatus combining bypass diode and wire
WO2013179286A1 (en) 2012-05-29 2013-12-05 Essence Solar Solutions Ltd. Frame holder for an optical element
KR101349847B1 (ko) * 2012-06-13 2014-01-27 희성전자 주식회사 바이패스 다이오드 일체형 태양전지 패키지
EP2870636A4 (en) * 2012-07-06 2016-03-16 Sandia Corp SYSTEM FOR PRODUCING PHOTOVOLTAIC ENERGY WITHOUT BYPASS DIODES
US10418501B2 (en) 2015-10-02 2019-09-17 X-Celeprint Limited Wafer-integrated, ultra-low profile concentrated photovoltaics (CPV) for space applications
DE102017108223B4 (de) 2017-04-18 2024-05-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaisches Modul und Verfahren zu dessen Herstellung
US10615744B2 (en) * 2017-08-13 2020-04-07 The Aerospace Corporation Intelligent solar cell carrier system for flight and laboratory measurement applications

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4577051A (en) * 1984-09-28 1986-03-18 The Standard Oil Company Bypass diode assembly for photovoltaic modules
JP2912496B2 (ja) * 1991-09-30 1999-06-28 シャープ株式会社 太陽電池モジュール
US5391235A (en) * 1992-03-31 1995-02-21 Canon Kabushiki Kaisha Solar cell module and method of manufacturing the same
US6248948B1 (en) * 1998-05-15 2001-06-19 Canon Kabushiki Kaisha Solar cell module and method of producing the same
US6252158B1 (en) * 1998-06-16 2001-06-26 Canon Kabushiki Kaisha Photovoltaic element and solar cell module
US6103970A (en) * 1998-08-20 2000-08-15 Tecstar Power Systems, Inc. Solar cell having a front-mounted bypass diode
JP4201241B2 (ja) * 2001-05-17 2008-12-24 株式会社カネカ 集積型薄膜光電変換モジュールの作製方法
US6690041B2 (en) * 2002-05-14 2004-02-10 Global Solar Energy, Inc. Monolithically integrated diodes in thin-film photovoltaic devices
US8067687B2 (en) * 2002-05-21 2011-11-29 Alliance For Sustainable Energy, Llc High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters
JP2004103959A (ja) * 2002-09-11 2004-04-02 Matsushita Electric Ind Co Ltd 太陽電池およびその製造方法
US6784358B2 (en) * 2002-11-08 2004-08-31 The Boeing Co. Solar cell structure utilizing an amorphous silicon discrete by-pass diode
FR2863775B1 (fr) * 2003-12-15 2006-04-21 Photowatt Internat Sa Module photovoltaique avec un dispositif electronique dans l'empilage lamine.

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102782876A (zh) * 2010-02-25 2012-11-14 索泰克太阳能公司 太阳能电池组件i
US10333015B2 (en) 2010-02-25 2019-06-25 Saint-Augustin Canada Electric Inc. Solar cell assembly I
CN103563092A (zh) * 2011-02-24 2014-02-05 索泰克太阳能公司 用于聚光器光伏模块的太阳能电池阵列
CN103563092B (zh) * 2011-02-24 2016-01-06 索泰克太阳能公司 用于聚光器光伏模块的太阳能电池阵列
US10804420B2 (en) 2011-02-24 2020-10-13 Saint-Augustin Canada Electric Inc. Solar cell arrays for concentrator photovoltaic modules
CN103392239A (zh) * 2011-02-28 2013-11-13 弗兰霍菲尔运输应用研究公司 光伏模块及其制造方法
CN103392239B (zh) * 2011-02-28 2015-12-23 弗兰霍菲尔运输应用研究公司 光伏模块及其制造方法
CN110707110A (zh) * 2013-02-15 2020-01-17 瑞吉恩资源有限公司 电池模块
CN110707110B (zh) * 2013-02-15 2023-11-03 瑞吉恩资源有限公司 电池模块
CN103560158A (zh) * 2013-11-05 2014-02-05 深圳市昂特尔太阳能投资有限公司 一种边侧型高倍聚光太阳能热电分离接收器
CN103560158B (zh) * 2013-11-05 2015-10-21 深圳市昂特尔太阳能投资有限公司 一种边侧型高倍聚光太阳能热电分离接收器

Also Published As

Publication number Publication date
US7977567B2 (en) 2011-07-12
EP1930954B1 (de) 2009-07-29
KR20090086096A (ko) 2009-08-10
CN101548394B (zh) 2011-06-15
US20090272427A1 (en) 2009-11-05
EP1930954A1 (de) 2008-06-11
KR101426972B1 (ko) 2014-08-07
WO2008068006A1 (de) 2008-06-12
PT1930954E (pt) 2009-09-01
ATE438201T1 (de) 2009-08-15
ES2327864T3 (es) 2009-11-04
DE502006004401D1 (de) 2009-09-10

Similar Documents

Publication Publication Date Title
CN101548394B (zh) 光伏模组及其应用
CN202839750U (zh) 具有散热器单元的光电器件和光电系统
CN101238587B (zh) 太阳能电池组件及其生产方法
EP0657948B1 (en) Concentrating photovoltaic module and fabrication method
EP2510549B1 (en) Photovoltaic device with bypass diode
US20100326492A1 (en) Photovoltaic Cell Support Structure Assembly
US11594651B2 (en) Cell module
CN102007606A (zh) 太阳能电池模块
CN104576798A (zh) 太阳能电池模块及其制造方法
KR102195004B1 (ko) 집광형 태양광발전 모듈들을 위한 태양 전지 어레이들
TW201324823A (zh) 用於標準結晶矽太陽能電池的單片式模組組件
CN104681649A (zh) 太阳能电池和太阳能电池模块
WO2014037721A1 (en) Concentrated photovoltaic (cpv) cell arrangement, module and method of fabrication
WO2014037722A1 (en) Concentrated photovoltaic (cpv) cell module with secondary optical element and method of fabrication
CN102280508A (zh) 用于聚光光伏系统的接收器及其制造方法
EP2362431B1 (en) Solar cell assembly
US20140076395A1 (en) Polymer sockets for back-contact photovoltaic cells
US20140076374A1 (en) Concatenation of interconnected polymer sockets for back-contact photovoltaic cells

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant