CN101545134A - 利用含杂质硅材料制备高纯度单晶硅棒的方法及其装置 - Google Patents
利用含杂质硅材料制备高纯度单晶硅棒的方法及其装置 Download PDFInfo
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- CN101545134A CN101545134A CN200910026142A CN200910026142A CN101545134A CN 101545134 A CN101545134 A CN 101545134A CN 200910026142 A CN200910026142 A CN 200910026142A CN 200910026142 A CN200910026142 A CN 200910026142A CN 101545134 A CN101545134 A CN 101545134A
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 239000002210 silicon-based material Substances 0.000 title claims abstract description 37
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000010439 graphite Substances 0.000 claims abstract description 45
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 27
- 238000009413 insulation Methods 0.000 claims abstract description 22
- 239000013078 crystal Substances 0.000 claims description 38
- 239000000284 extract Substances 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 21
- 241000209456 Plumbago Species 0.000 claims description 18
- 238000000605 extraction Methods 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000002360 preparation method Methods 0.000 abstract description 5
- 239000002699 waste material Substances 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 12
- 239000007788 liquid Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000002386 leaching Methods 0.000 description 3
- 238000000746 purification Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000013022 venting Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000003610 charcoal Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004523 agglutinating effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910021422 solar-grade silicon Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
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CN2009100261424A CN101545134B (zh) | 2009-03-31 | 2009-03-31 | 利用含杂质硅材料制备高纯度单晶硅棒的方法及其装置 |
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CN2009100261424A CN101545134B (zh) | 2009-03-31 | 2009-03-31 | 利用含杂质硅材料制备高纯度单晶硅棒的方法及其装置 |
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CN101545134A true CN101545134A (zh) | 2009-09-30 |
CN101545134B CN101545134B (zh) | 2011-05-04 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101781791A (zh) * | 2010-03-22 | 2010-07-21 | 浙江星宇电子科技有限公司 | 一种单晶棒直拉过程中除去杂质的方法 |
CN102173422A (zh) * | 2010-12-30 | 2011-09-07 | 上海九晶电子材料股份有限公司 | 一种太阳能级带渣硅料的分离和提纯方法 |
CN102242397A (zh) * | 2011-07-15 | 2011-11-16 | 西安华晶电子技术股份有限公司 | 一种直拉硅单晶的生产工艺 |
CN101717991B (zh) * | 2009-12-14 | 2012-02-29 | 晶龙实业集团有限公司 | 改进的直拉硅单晶炉 |
CN102560621A (zh) * | 2011-12-28 | 2012-07-11 | 苏州优晶光电科技有限公司 | 除杂装置 |
CN103422159A (zh) * | 2012-05-23 | 2013-12-04 | 浙江锦锋光伏科技有限公司 | 一种直拉单晶生产过程中的除杂方法 |
CN112538653A (zh) * | 2020-12-08 | 2021-03-23 | 江苏神汇新材料科技有限公司 | 一种用于在线清理单晶炉内杂质底料的方法 |
CN113463181A (zh) * | 2021-09-03 | 2021-10-01 | 江苏矽时代材料科技有限公司 | 一种半导体单晶硅生长装置 |
-
2009
- 2009-03-31 CN CN2009100261424A patent/CN101545134B/zh active Active
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101717991B (zh) * | 2009-12-14 | 2012-02-29 | 晶龙实业集团有限公司 | 改进的直拉硅单晶炉 |
CN101781791A (zh) * | 2010-03-22 | 2010-07-21 | 浙江星宇电子科技有限公司 | 一种单晶棒直拉过程中除去杂质的方法 |
CN102173422A (zh) * | 2010-12-30 | 2011-09-07 | 上海九晶电子材料股份有限公司 | 一种太阳能级带渣硅料的分离和提纯方法 |
CN102173422B (zh) * | 2010-12-30 | 2012-08-29 | 上海九晶电子材料股份有限公司 | 一种太阳能级带渣硅料的分离和提纯方法 |
CN102242397A (zh) * | 2011-07-15 | 2011-11-16 | 西安华晶电子技术股份有限公司 | 一种直拉硅单晶的生产工艺 |
CN102242397B (zh) * | 2011-07-15 | 2013-10-23 | 西安华晶电子技术股份有限公司 | 一种直拉硅单晶的生产工艺 |
CN102560621A (zh) * | 2011-12-28 | 2012-07-11 | 苏州优晶光电科技有限公司 | 除杂装置 |
CN103422159A (zh) * | 2012-05-23 | 2013-12-04 | 浙江锦锋光伏科技有限公司 | 一种直拉单晶生产过程中的除杂方法 |
CN112538653A (zh) * | 2020-12-08 | 2021-03-23 | 江苏神汇新材料科技有限公司 | 一种用于在线清理单晶炉内杂质底料的方法 |
CN113463181A (zh) * | 2021-09-03 | 2021-10-01 | 江苏矽时代材料科技有限公司 | 一种半导体单晶硅生长装置 |
CN113463181B (zh) * | 2021-09-03 | 2021-11-02 | 江苏矽时代材料科技有限公司 | 一种半导体单晶硅生长装置 |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |