CN101540349A - Aluminized BSF secondary sintering technology for crystal silicon solar cell - Google Patents
Aluminized BSF secondary sintering technology for crystal silicon solar cell Download PDFInfo
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- CN101540349A CN101540349A CN200910039022A CN200910039022A CN101540349A CN 101540349 A CN101540349 A CN 101540349A CN 200910039022 A CN200910039022 A CN 200910039022A CN 200910039022 A CN200910039022 A CN 200910039022A CN 101540349 A CN101540349 A CN 101540349A
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- solar cell
- bsf
- crystal silicon
- aluminized
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an aluminized BSF secondary sintering technology for a crystal silicon solar cell. The technology utilizes a laser beam or a microwave beam in a pulse mode to scan or integrally scan an aluminized BSF region at the back of the cell so that aluminum in a scanning region is instantaneously heated and melted and diffuses to a silica body; and a whole or partial aluminum heavily-doped region is formed at the back of the solar cell so as to form a BSF with excellent performance, thereby accelerating the diffusion of minority carriers, improving the collection ratio of the minority carriers, improving the long-wave response of the cell and further improving the whole efficiency of the cell. The technology can control the thermal influence of secondary sintering on the periphery of an aluminum layer so as not to generate obvious adverse influence on other parts of the cell, has various flexible laser sintering design modes, is simple, convenient and rapid to manufacture and can be rapidly combined with the prior industrial production.
Description
Technical field
The present invention relates to a kind of method of a crystal-silicon solar cell aluminium back of the body double sintering, specifically a kind of laser, microwave isopulse thermal source of utilizing at the polycrystalline silicon solar cell back side carries out the method that double sintering forms high-performance aluminum back of the body field to aluminium lamination.
Background technology
Silicon solar cell utilizes the photovoltaic effect of p-n junction to realize opto-electronic conversion, has become one of new forms of energy development main flow.Crystal-silicon solar cell accounted for about 90% of world's solar cell total output in 2008, and will continue the dominant position of occuping market in following a period of time, the overwhelming majority is to adopt p type silicon chip in the crystal-silicon solar cell, the silk screen printing aluminium lamination is adopted at the back side, by the Fast Sintering stove aluminium is diffused into and forms a back side internal electric field in the silicon substrate, make minority carrier obtain quickening and better collecting, thereby improve output voltage, electric current and the whole efficiency of battery, the general battery of producing adopts an aluminium back of the body back power to improve more than 5%.From the performance requirement of aluminium back surface field, the temperature of sintering is high more, the time is long more, the aluminium atom is abundant more to the diffusion of silicon body, and diffusion concentration is high more, and the back surface field performance of formation is just good more.But in the battery production of reality, too high sintering temperature can cause harmful effect to other partial properties of battery, top layer silicon nitride film performance degradation is spread, makes in the breeding that for example increases silicon volume defect and impurity, in sintering process, make front electrode burn p-n junction most serious of all, cause serious electric leakage and battery to scrap.Front electrode, backplate and the aluminium back of the body is to print respectively in large-scale production line at present, and is once sintered, requires restriction so the sintering temperature of the aluminium back of the body is subjected to the sintering of front electrode, and the diffusion concentration of the general aluminium back of the body is 10
15Cm
-3,, utilize the rapid thermal treatment sintering technology diffusion concentration of aluminium back of the body field can be brought up to 10 in the laboratory
16Cm
-3, performance is better.The silk screen printing aluminum layer thickness is about 20 microns at present, form the particulate packed structures of submicron-scale behind the sintering, by improving sintering temperature, can also reduce the content of organics in the printing aluminium lamination, improve the contact of particulate in the aluminium lamination, thereby improve the conductivity of printing aluminium lamination, reduce the series resistance of battery.
Summary of the invention
The purpose of this invention is to provide a kind of aluminized BSF secondary sintering technology for crystal silicon solar cell, this process using pulse laser or pulse microwave, can carry out accurately an aluminium back of the body layer, PULSE HEATING flexibly, not only can significantly improve the diffusion temperature of aluminium lamination, improve diffusion concentration, can also avoid solar cell front dielectric layer and electrode performance are caused adverse effect, obviously improve the performance of aluminium back of the body field.
Purpose of the present invention is achieved by taking following technical scheme:
A kind of aluminized BSF secondary sintering technology for crystal silicon solar cell, it is characterized in that, utilize laser beam or microbeam, make the aluminium transient heating fusing in the scanning area in the intensive scanning of back of crystal silicon solar cell aluminium lamination, and, form the heavy aluminum diffusing back of the body field of excellent performance to the diffusion of silicon body.
Technology utilization laser beam of the present invention or microbeam are in the crystal silicon cell back scan, aluminum in the scanning area melts under PULSE HEATING and also is diffused into the silicon surface of adhering to better, improve the aluminium doping content of aluminium back of the body field, obtain the passivation of the better aluminium back of the body and to the collection efficiency of minority carrier, improve the whole efficiency of solar cell, and pulse heat source can be to the dielectric layer and the obvious destruction of electrode generation of solar cell front surface to the heating of aluminium lamination in this process.
As a further improvement on the present invention, it is that 1～1000W, wavelength are pulse or the continuous laser beam of 1100～200nm that described laser beam adopts power, is shining the aluminium lamination surface and scans through reaching micron to the hot spot of millimeter magnitude diameter after focusing on.
As a further improvement on the present invention, described microbeam adopts power 10～1000W, millisecond to reach the microwave source of shorter pulse duration, converges the back through antenna and heats on aluminium lamination.
As a further improvement on the present invention,, select suitable scanning pattern, carry out comprehensive or local sintering at back of solar cell according to the performance of crystal silicon chip, printing aluminium lamination and laser, microwave.
The main means of a double sintering aluminium back of the body that technology of the present invention proposes are to adopt laser beam or the microbeam aluminium lamination at utmost point heat fused back of solar cell in the short time, adopt more powerful pulse or continuous laser (microwave) bundle, scanning through shining silicon chip surface after focusing on (enough detailed rules and regulations need not focus on as wave beam itself), make the aluminum fusing of irradiation area and, form aluminium doped layer than ordinary sinter technology higher concentration to the diffusion of silicon body.
The concrete treatment step of the inventive method is:
(1) adopt method such as silk screen printing to make certain thickness aluminium lamination at cell backside;
(2) select suitable scanning pattern, can design dot matrix, linear array or other patterns can whole or local aluminium coating aspect amass;
(3), select suitable laser parameter schemes such as optical maser wavelength, beam mode, spot size, light beam power, pulse frequency and sweep speed for laser; To using microwave source, select parameters such as suitable microwave wavelength, beam size, beam power, pulse duration, carry out setting;
(4) silicon chip is fixed on the workbench, utilizes laser (or microwave) bundle scanning carrying out sintering by predetermined parameters and pattern.
The present invention utilizes laser or microwave sintering, compares with the conventional sintering stove, and its advantage mainly contains: 1. the temperature of laser or microwave sintering is very high, and aluminium lamination is melted fully, and the concentration of doping improves greatly; 2. the heating time of pulse laser and microwave extremely short (nanosecond is to millisecond), the heating high-temperature area is very little, is only limited to aluminium lamination and silicon body surface layer, can not cause obvious influence to the performance of front dielectric layer and front electrode; 3. the pattern of laser or microwave sintering and area can require to adjust flexibly according to reality, and manufacturing process is easy fast; 4. laser or microwave sintering be based on the equipment of maturation, and be simple for production, can be attached to easily in the existing manufacturing technique, has good industrialization prospect.
Description of drawings
Fig. 1 is crystal-silicon solar cell structural section figure;
Fig. 2 is laser, microwave double sintering schematic diagram;
Fig. 3 is a structural representation behind the local secondary sintering;
Fig. 4 is a structural representation behind comprehensive double sintering;
Among Fig. 1-4,1. preceding electrode; 2. front passivated reflection reducing membrane; 3.N type diffusion layer; 4.P type silicon substrate; 5. aluminium diffusion layer (be aluminium back of the body the layer); 6. printing aluminium lamination; 7. laser beam/microbeam.
Embodiment
The present invention will be described below to enumerate specific embodiment.It is pointed out that embodiment only is used for that the invention will be further described, do not represent protection scope of the present invention, nonessential modification and adjustment that other people prompting according to the present invention is made still belong to protection scope of the present invention.
Shown in Fig. 1-4, aluminized BSF secondary sintering technology for crystal silicon solar cell provided by the invention is to utilize laser beam or microbeam in the intensive scanning of back of crystal silicon solar cell aluminium lamination, make the interior aluminium transient heating fusing of scanning area, and, form the heavy aluminum diffusing back of the body field of excellent performance to the diffusion of silicon body.
Adopt the Nd:YAG laser of a wavelength 1064nm: laser pulse frequency 1K～30KHz, vibration mirror scanning, light beam transverse mode are low step mode.It is 1～10KHz that laser pulse frequency is set, and sweep speed is 100mm/s, and exciting current is 16～21A.Sample is for adopting the conventional p type crystal silicon cell finished product of silk-screen printing technique.The sintering scanning pattern is a close-packed lattice, local sintering, and about 80 microns of some footpath, the about 0.5mm of spacing adopts laser beam to repeat the mode sintering of a plurality of pulses at a point.
Adopt the Nd:YAG laser of a wavelength 1064nm: laser pulse frequency 1K～30KHz, vibration mirror scanning, light beam transverse mode are low step mode.It is 1～15KHz that laser pulse frequency is set, and sweep speed is 100mm/s, and exciting current is 16～25A.Sample is for adopting the conventional p type crystal silicon cell finished product of silk-screen printing technique.The sintering scanning pattern is intensive circle array battle array, local sintering, and 100～200 microns of diameter of a circles, the about 0.5～1mm of spacing, laser beam scans along circle, can repeat repeatedly according to actual performance.
Adopt the Nd:YAG laser of a wavelength 1064nm: laser pulse frequency 1K～30KHz, vibration mirror scanning, light velocity transverse mode are low step mode.It is 1～10KHz that laser pulse frequency is set, and sweep speed is 20～200mm/s, and exciting current is 18～25A.Sample is for adopting the conventional p type crystal silicon cell finished product of silk-screen printing technique.The sintering scanning pattern is an array of parallel lines, about 50～200 microns of distance between centers of tracks, laser sintered covering entire cell back side aluminium lamination.
Adopt the microwave sintering apparatus of a 2.45GHz, millisecond pulse, power 10～5KW, 10 millimeters of microbeam focal diameter, sample is for adopting the conventional p type crystal silicon cell finished product of silk-screen printing technique.Adopt the line sweep mode to cover entire cell aluminium lamination surface.
Claims (5)
1. aluminized BSF secondary sintering technology for crystal silicon solar cell, it is characterized in that, utilize laser beam or microbeam, make the aluminium transient heating fusing in the scanning area in the intensive scanning of back of crystal silicon solar cell aluminium lamination, and, form the heavy aluminum diffusing back of the body field of excellent performance to the diffusion of silicon body.
2. aluminized BSF secondary sintering technology for crystal silicon solar cell according to claim 1, it is characterized in that, it is that 1～1000W, wavelength are pulse or the continuous laser beam of 1100～200nm that described laser beam adopts power, is shining the aluminium lamination surface and scans through reaching micron to the hot spot of millimeter magnitude diameter after focusing on.
3. aluminized BSF secondary sintering technology for crystal silicon solar cell according to claim 1 is characterized in that, described microbeam adopts power 10～1000W, millisecond to reach the microwave source of shorter pulse duration, converges the back through antenna and heats on aluminium lamination.
4. aluminized BSF secondary sintering technology for crystal silicon solar cell according to claim 1, it is characterized in that, according to the performance of crystal silicon chip, printing aluminium lamination and laser, microwave, select suitable scanning pattern, carry out comprehensive or local sintering at back of solar cell.
5. production method for polycrystalline silicon solar cell texture surface according to claim 4 is characterized in that described scanning pattern is designed to dot matrix or linear array.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148288A (en) * | 2011-01-27 | 2011-08-10 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Process for preparing backside passivation layer of monocrystal silicon solar battery plate by laser rapid heating method |
| CN102468363A (en) * | 2010-11-09 | 2012-05-23 | 浚鑫科技股份有限公司 | Processing method of low efficient solar cell |
| CN102723267A (en) * | 2012-05-29 | 2012-10-10 | 奥特斯维能源（太仓）有限公司 | Method for manufacturing crystalline silicon solar cell and secondary laser sintering method |
| CN102881763A (en) * | 2011-07-11 | 2013-01-16 | 刘莹 | Equipment for manufacturing back electrode of crystalline silicon solar cell by laser sintering |
| CN103996746A (en) * | 2014-05-23 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced |
| CN107946381A (en) * | 2017-10-31 | 2018-04-20 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of electrode of solar battery |
| CN108878591A (en) * | 2018-07-02 | 2018-11-23 | 通威太阳能（安徽）有限公司 | A kind of laser sintering processes of crystal silicon solar batteries metal electrode |
| CN117393654A (en) * | 2023-12-06 | 2024-01-12 | 浙江晶科能源有限公司 | Photovoltaic cell preparation method and photovoltaic cell |
-
2009
- 2009-04-27 CN CN200910039022A patent/CN101540349A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102468363A (en) * | 2010-11-09 | 2012-05-23 | 浚鑫科技股份有限公司 | Processing method of low efficient solar cell |
| CN102468363B (en) * | 2010-11-09 | 2013-07-10 | 浚鑫科技股份有限公司 | Processing method of low efficient solar cell |
| CN102148288A (en) * | 2011-01-27 | 2011-08-10 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Process for preparing backside passivation layer of monocrystal silicon solar battery plate by laser rapid heating method |
| CN102881763A (en) * | 2011-07-11 | 2013-01-16 | 刘莹 | Equipment for manufacturing back electrode of crystalline silicon solar cell by laser sintering |
| CN102723267A (en) * | 2012-05-29 | 2012-10-10 | 奥特斯维能源（太仓）有限公司 | Method for manufacturing crystalline silicon solar cell and secondary laser sintering method |
| CN103996746A (en) * | 2014-05-23 | 2014-08-20 | 奥特斯维能源（太仓）有限公司 | Manufacturing method for PERL crystalline silicon solar cell capable of being massively produced |
| CN107946381A (en) * | 2017-10-31 | 2018-04-20 | 泰州隆基乐叶光伏科技有限公司 | The preparation method of electrode of solar battery |
| CN108878591A (en) * | 2018-07-02 | 2018-11-23 | 通威太阳能（安徽）有限公司 | A kind of laser sintering processes of crystal silicon solar batteries metal electrode |
| CN117393654A (en) * | 2023-12-06 | 2024-01-12 | 浙江晶科能源有限公司 | Photovoltaic cell preparation method and photovoltaic cell |
| CN117393654B (en) * | 2023-12-06 | 2024-04-09 | 浙江晶科能源有限公司 | Photovoltaic cell preparation method and photovoltaic cell |
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Open date: 20090923 |