CN102881763A - Equipment for manufacturing back electrode of crystalline silicon solar cell by laser sintering - Google Patents
Equipment for manufacturing back electrode of crystalline silicon solar cell by laser sintering Download PDFInfo
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- CN102881763A CN102881763A CN2011102086501A CN201110208650A CN102881763A CN 102881763 A CN102881763 A CN 102881763A CN 2011102086501 A CN2011102086501 A CN 2011102086501A CN 201110208650 A CN201110208650 A CN 201110208650A CN 102881763 A CN102881763 A CN 102881763A
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Abstract
The invention discloses equipment for manufacturing a back electrode of a crystalline silicon solar cell by laser sintering. The equipment comprises a continuous vacuum chamber system, a gas circuit control system, an electric control system, a heating system, a coating system, a laser system and a gas extraction system, wherein a vacuum chamber 1 is a substrate inlet chamber; a vacuum chamber 2 is a surge chamber; a vacuum chamber 3 is a sputtering aluminizer chamber; a vacuum chamber 4 is a surge chamber; a vacuum chamber 5 is a laser sintering chamber; a vacuum chamber 6 is a surge chamber; a vacuum chamber 7 is a substrate outlet chamber; the substrate inlet chamber and the substrate outlet chamber are provided with vacuum doors capable of being opened and closed manually and can overturn inlet and outlet substrates; and the surge chambers, the coating chamber and the laser sintering chamber are provided with preheating systems for heating the substrates. The vacuum chambers are connected by high vacuum valves, and provided with transmission systems capable of being subjected to independent stepless speed regulating. A vacuum unit comprises a mechanical pump set, a waste gas treatment device, a valve, a pipeline system and the like. A PLC (Programmable Logic Controller) of the electric control system controls the gas pressure intensity, the heating temperature and the transmission system.
Description
Technical field
The present invention relates to a kind of rear electrode for crystal silicon solar battery manufacturing field of equipment, especially a kind of equipment of laser sintered rear electrode for crystal silicon solar battery processed.
Background technology
Crystal silicon solar energy battery is the main product of present solar cell industry, wherein silk screen printing then sintering be its preparation back electrode typical process.This road technique is had relatively high expectations to screen printing device, and so far, the domestic manufacture of solar cells selected equipment overwhelming majority of producer is overseas equipment.Even like this, this procedure remains the highest procedure of fragmentation rate, and is very crucial for the rate of finished products of solar cell.
The aluminium paste that uses in the silk-screen or silver-colored aluminum slurry cause production cost higher along with the expansion of crystalline silicon production also becomes very well sold and in short supply.Simultaneously, the thickness of electrode is far longer than as the required thickness of back electrode during silk-screen, also is a kind of waste for material.
In order to address the above problem, with realize efficient again can economical with materials when producing fast, reduce cost, develop a kind of contact-free formula and prepare the crystal silicon cell back electrode, adopt vacuum coating and the laser sintered mode that combines to realize the preparation of crystal silicon cell back electrode, thereby simplified technological process, saved electrode material, also reduced simultaneously the fragmentation rate, the present invention is directed to this new process, design a kind of continuous equipment, adopt the same production line to realize plated film and laser sintered operation, extensive to realize it, automated production needs.
Summary of the invention
Goal of the invention: technical problem to be solved by this invention is that vacuum coating adds laser sintered preparation crystalline silicon back electrode for new technology, provide that a kind of technique is simple, reliable in quality, workable continuously acting production lines, just its technique is embodied in actual production process, and embodies its automation characteristics.
Technical scheme:
This programme comprises continuous vacuum chamber, air-path control system, electric-control system, vacuum-pumping system, coating system, laser system etc., and wherein coating system adopts the sputter coating mode, in order to all to arrange electrode material at surface of crystalline silicon; Laser system is positioned at top, chamber, true chamber, can make its sinter molding to the electrode material heating of the surface of crystalline silicon in the vacuum chamber; The stepless speed regulation of drive system sectional independence, adapt to the different transfer rate of each segment process.
Continous vacuum chamber and air-path control system pass through various electric components by wireway, valve etc. with electric-control system, are connected respectively by the vacuum components and parts with vacuum-pumping system.Wherein air-path control system provides process gas for the plated film vacuum chamber in the continous vacuum chamber; Process gas advances the plated film vacuum chamber by valve, mass flowmenter.Electric-control system is connected with continous vacuum chamber, air-path control system, vacuum unit respectively and implements control, and electric-control system mainly is turnover print, laser power, process gas pressure, print heating-up temperature, laser illumination print time etc. to the control of continous vacuum chamber; Electric-control system mainly is the opening/closing time of air guide valve, the measurement of gas flowmeter etc. to the control of air-path control system; Electric-control system mainly is that mechanical pump starts, stops to the control of vacuum unit, the switching of vacuum valve and interlocking, bleeds the time etc.Wherein the vacuum unit is connected with the continous vacuum chamber, mainly the continous vacuum chamber is vacuumized, and for sputter and laser sintered operation provide the base vacuum degree, guarantees the doping quality; The fore pump exhaust outlet is connected with exhaust pipe in the vacuum unit, and waste gas enters atmosphere through processing after meeting environmental protection standard after pipeline is discharged.
The continous vacuum chamber forms by entering sheet chamber, surge chamber, coating chamber, surge chamber, laser sintered chamber, surge chamber, unloading piece chamber successively, and wherein each surge chamber can be made as some or cancellation, and coating chamber and laser sintered chamber can be set as some.But the vacuum chamber material is the stainless steel of acid and alkali-resistance, usually adopts the 316L stainless steel, and the chamber monnolithic case is rectangle, and inside is multi-chamber structure.But the Vacuum door of band upset movable valve and hand switch is equipped with in turnover sheet chamber, and conveniently to pick and place print, all the other each chambers link with vacuum valve, can adopt vacuum flap valve or vacuum gate valve, can be rapidly opened and closed when print transmits between each chamber.
Plated film internal vacuum chamber top is provided with the square planar target, uses horizontal sputter coating, and its coating film thickness is controlled between the 0.5-1.0 μ.
Vacuum-packed windowpane is equipped with at laser sintered vacuum chamber top, its dimensioned area is greater than the print area, laser system is equipped with in the windowpane top, can send some roads x wire laser or face laser, the lateral length of laser guarantees that greater than the length of pending print the whole area of print can obtain Ear Mucosa Treated by He Ne Laser Irradiation.Adopt laser to can be continuous solid laser or excimer laser, be preferably the continuous solid laser.
Be provided with heating system among surge chamber, coating chamber, the laser sintered chamber, can be to substrate heating.Its heating system can be in surge chamber, coating chamber, the laser sintered indoor different temperatures of being arranged to, with the heating curves of simulation ordinary sinter equipment.Its heating system temperature control adjustable range is between 0-500 ℃.
The metal observation window is equipped with in each chamber front, and the back is connected with vacuum-pumping system by vacuum pipe and vacuum valve.Each chamber interior be equipped with can independent stepless speed regulation drive system and slide glass dolly, drive system is roller transmission or gear drive.Wherein the slide glass dolly is by aluminium sheet and elasticly can high temperature resistantly not allow volatile elastic pressuring plate to form, and flexure strip is fixed on appropriate location on the aluminium sheet through alignment pin.Be the friction type transmission between drive system and slide glass dolly, guarantee that transfer rate is steadily even
The vacuum unit is comprised of mechanical unit, high-vacuum pump and vacuum pipe.Wherein high-vacuum pump can adopt cryopump, molecular pump etc., is connected with high vacuum valve between high-vacuum pump and the vacuum chamber.The machinery unit links by foreline valve with high-vacuum pump, is connected by slightly taking out valve with vacuum chamber.Vacuum pipe adopts the stainless-steel vacuum pipe to be connected with vacuum corrugated pipe.
Air-path control system is mainly used in realizing the flow control to process gas.Critical piece comprises mass flowmenter, unidirectional valve, pneumatic stopping valve, gas-guide pipeline, pressure-reducing valve, gas cylinder.Process gas enters plated film vacuum chamber and even gas distribution by flowing out in the gas cylinder through pressure-reducing valve, mass flowmenter, unidirectional valve, pneumatic stopping valve; Connect by stainless steel tube between the air-path control system all parts, the air-path control system control signal is provided by electric-control system (PLC).
Electric-control system mainly is comprised of the PLC controller, and PLC controller itself is provided with variable element with fundamental procedure, and variable element is set by screen by operating personnel, the parameter of setting by PLC to being controlled by control assembly.Simultaneously, PLC also can be connected with PC, and the parameters in the technical process is carried out real-time tracking and memory storage, and computer is connected online, can realize Long-distance Control and monitoring to technique.
Useful achievement: the present invention be directed in the existing crystal silicon solar energy battery production process, adopt the new technology of laser sintered back of the body electric field behind the sputter aluminizer and the laser that designs prepares the super shallow junction equipment of crystalline silicon.This equipment can be quick, realizes in large quantities high-quality, and the production of high stability and low fragmentation rate owing to be continuous equipment, can be controlled in automation, is easy to accomplish scale production.Simultaneously, because plated film and sintering process be with respect to silk-screen and high-temperature sintering apparatus, its requirement is easier to realize, domestic can production voluntarily avoided domestic crystal silicon solar energy battery and produced the situation that screen printing device must dependence on import.
Owing in a plurality of vacuum chambers, be provided with pre-heating system, can make the heating curves of substrate as far as possible similar with existing sintering temperature curve, when realizing other technical process, also realize the process that partially sinters, not only make technique become smooth, also accelerated its progress.
Simultaneously, because sputter coating can accurately be controlled coating film thickness, its THICKNESS CONTROL between 0.5-1.0 μ, can be satisfied technological requirement, also save electrode material, save simultaneously the length of coating chamber, save cost.
In a word, this equipment reduces the manufacture difficulty of back electrode greatly, has realized contact-free, automation, and simultaneously, because the smoothness reasonable in design of equipment, the manufacturing cost of its equipment and technical difficulty are all relatively low.
Description of drawings
Accompanying drawing 1 is system module figure
Accompanying drawing 2 is system construction drawing
Accompanying drawing 3 is live-roller schematic construction front view
Accompanying drawing 4 is live-roller schematic construction vertical view
Accompanying drawing 5 is silicon-chip loading supporting plate front view
Accompanying drawing 6 is silicon-chip loading supporting plate vertical view
Specific embodiment
As shown in Figure 1, the present invention mainly is comprised of continuous vacuum chamber system, air-path control system, electric-control system, vacuum-pumping system.Wherein electric-control system is to the continuous vacuum chamber system, and air-path control system, vacuum-pumping system are carried out control.
The connected mode of continuous vacuum chamber and vacuum-pumping system as shown in Figure 2, wherein vacuum chamber 1 is slice chamber for laser sintered chamber, vacuum chamber 6 for surge chamber, vacuum chamber 7 for surge chamber, vacuum chamber 5 for sputter coating chamber, vacuum chamber 4 for surge chamber, vacuum chamber 3 for entering sheet chamber, vacuum chamber 2, and high-vacuum pump 801, mechanical unit 803 are connected by vacuum valve 802.Vacuum film coating chamber 3 tops are provided with flat target 301, and the laser transmitting system 502 that places laser sintered vacuum chamber 5 tops is fixed in directly over the windowpane 501 by support 503.Observation window 10 is positioned at the vacuum chamber side, and each vacuum chamber all has one.The outdoor end of turnover sheet is by high vacuum valve 11 sealings, but and hand switch.Be connected by high vacuum valve 9 between other two vacuum chamber.
The live-roller system is positioned at the vacuum chamber below shown in Fig. 3,4, comprises roller rod 12 and movable sealing sleeve 1, and each vacuum chamber can be realized respectively different transmission speeds.Fig. 5, Fig. 6 are slide rack, are comprised of aluminium sheet 17, King compressing tablet 16, split pin 15 and alignment pin 14.
Further specify the present invention below in conjunction with the drawings and the specific embodiments;
Be located on 156 * 156 the crystal silicon solar energy battery substrate and be prepared back electrode technique, slide glass dolly slide glass amount is 10,10 minutes stoves of productive temp.Calculate each vacuum-chamber dimensions according to slide glass dolly size, the vacuum degree that is reached by vacuum chamber size and productive temp and arts demand is determined the configuration of vacuum-pumping system.Its production process is as follows, close door for vacuum chamber, vacuumize entering sheet chamber, each surge chamber, sputter coating chamber, laser sintered chamber, slice chamber, simultaneously, open pre-heating system in each vacuum chamber, preheat temperature is made as 200 ℃, 200 ℃, 250 ℃, 450 ℃, 200 ℃ successively.When vacuum degree reaches base vacuum and spends, in the plated film vacuum chamber, pass into process gas, work as preheat temperature, when pressure meets process conditions in heating time and the plated film vacuum chamber, open into the valve of end, sheet chamber, slide rack is put on the vacuum chamber drive system roller, when live-roller runs to into the sheet chamber other end, its vacuum degree will reach the base vacuum degree, then open into the vacuum valve between sheet chamber and the surge chamber, the slide glass dolly is sent to surge chamber, then close into the vacuum valve between sheet chamber and the surge chamber, can open into sheet chamber end vacuum valve this moment, advances second batch slide glass dolly.The slide glass dolly arrives coating chamber via surge chamber by the valve between surge chamber and the coating chamber, open flat target substrate is carried out plated film, when plated film is finished, substrate arrives the coating chamber other end just, then valve opening, make it enter the surge chamber adjacent with this end of coating chamber, and arrive laser sintered chamber via surge chamber, open laser system irradiation substrate, guarantee that temperature and retention time that its each position reaches meet technological requirement, and dolly arrives the other end of laser sintered chamber when finishing technique, and then the slide glass dolly passes through surge chamber successively by valve, technical process is finished in the slice chamber.
Present design can satisfy the various process conditions of this new technology fully, and plated electrode material and tinuous production of laser sintered usefulness are ideally combined, and has simplified operating process, has shortened the process time.Because the used material of vacuum coating is very clean, and laser sinteredly also under the vacuum condition of cleaning, carry out, can not introduce impurity to silicon chip inside, be conducive to guarantee processing quality.Simultaneously, because the contact-free formula characteristics of this new technology itself can greatly be avoided fragmentation and hidden splitting, guaranteed rate of finished products.The slide glass dolly has taken into full account the difference of output under the fragility of silicon chip and the different production line condition, simplicity of design and can be according to the slide glass amount of output different adjustment per car.The drive system of each vacuum chamber can independent stepless speed regulation, can guarantee fully that at different operation stages the different requirements to drive system change such as the process conditions demand, drive system also can flexiblely satisfy its requirement, increases the compatibility of its equipment.As in the present embodiment, adopt the linear laser device, the doping chamber then needs to consider the setting of transmission speed and the requirement of laser power and doping depth in the doping process.Independent speed governing can realize in the situation that does not affect other process procedure, makes this change become easy.
The invention provides a kind of design of equipment of laser sintered rear electrode for crystal silicon solar battery processed; it is a kind of new equipment scheme corresponding to new technology; thinking and method according to present design; the method of this technical scheme of specific implementation and approach also have a lot; the above only is preferred implementation of the present invention; should be understood that; for those skilled in the art; under the prerequisite that does not break away from the art of this patent scheme principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the protection range of this patent.In the present embodiment not clear and definite each part all available prior art realized.
Claims (10)
1. the equipment of a laser sintered rear electrode for crystal silicon solar battery processed comprises continuous vacuum chamber, air-path control system, and electric-control system, vacuum-pumping system, coating system, laser system etc. is characterized in that
Coating system adopts the sputter coating mode, in order to all to arrange electrode material at surface of crystalline silicon;
Laser system is positioned at directly over the laser sintered vacuum chamber, can make its sinter molding to the electrode material heating of the surface of crystalline silicon in the vacuum chamber;
Segmentation can independent stepless speed regulation drive system, adapt to the different transfer rate of each segment process.
2. the equipment of a kind of laser sintered rear electrode for crystal silicon solar battery processed as claimed in claim 1 is characterized in that, is provided with surge chamber between turnover sheet chamber, plated film vacuum chamber and the laser sintered vacuum chamber.
3. the equipment of a kind of laser sintered rear electrode for crystal silicon solar battery processed as claimed in claim 1 is characterized in that being provided with heating system among surge chamber, coating chamber, the laser sintered chamber, can be to substrate heating.
4. such as the equipment of claim 1 and a kind of laser sintered rear electrode for crystal silicon solar battery processed claimed in claim 3, it is characterized in that its heating system can be in surge chamber, coating chamber, the laser sintered indoor different temperatures of being arranged to, with the heating curves of simulation ordinary sinter equipment.
5. such as the equipment of claim 1 and a kind of laser sintered rear electrode for crystal silicon solar battery processed claimed in claim 3, it is characterized in that the heating system scope is adjustable at 0-500 ℃.
6. the equipment of a kind of laser sintered rear electrode for crystal silicon solar battery processed as claimed in claim 1 is characterized in that coating system adopts horizontal sputter coating system.
7. the equipment of a kind of laser sintered rear electrode for crystal silicon solar battery processed as claimed in claim 1 is characterized in that sintering adopts the solid continuous wave laser.
8. the equipment of a kind of laser sintered rear electrode for crystal silicon solar battery processed as claimed in claim 1 is characterized in that adopting custom-designed flat bogie, with the smooth transfer crystal silicon chip.
9. the equipment of a kind of laser sintered rear electrode for crystal silicon solar battery processed as claimed in claim 1 is characterized in that being the friction type transmission between drive system and slide glass dolly, guarantees that transfer rate is steadily even.
10. the equipment of a kind of laser sintered rear electrode for crystal silicon solar battery processed as claimed in claim 1 is characterized in that substrate aluminizer THICKNESS CONTROL is between 0.5-1.0 μ.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN2011102086501A CN102881763A (en) | 2011-07-11 | 2011-07-11 | Equipment for manufacturing back electrode of crystalline silicon solar cell by laser sintering |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011102086501A CN102881763A (en) | 2011-07-11 | 2011-07-11 | Equipment for manufacturing back electrode of crystalline silicon solar cell by laser sintering |
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| CN2011102086501A Pending CN102881763A (en) | 2011-07-11 | 2011-07-11 | Equipment for manufacturing back electrode of crystalline silicon solar cell by laser sintering |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104913601A (en) * | 2014-12-29 | 2015-09-16 | 深圳市信宇人科技有限公司 | Method for baking lithium ion battery or battery pole piece in tunnel mode |
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| JP2000269134A (en) * | 1999-03-19 | 2000-09-29 | Japan Steel Works Ltd:The | Manufacture of polycrystalline silicon film |
| CN101540349A (en) * | 2009-04-27 | 2009-09-23 | 中山大学 | Aluminized BSF secondary sintering technology for crystal silicon solar cell |
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| WO2010106012A2 (en) * | 2009-03-18 | 2010-09-23 | Oc Oerlikon Balzers Ag | Method of inline manufacturing a solar cell panel |
| WO2010111107A2 (en) * | 2009-03-26 | 2010-09-30 | Bp Corporation North America Inc. | Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions |
| CN101866978A (en) * | 2009-04-16 | 2010-10-20 | 张世英 | Method for continuously producing Cu-lm-Ga-S soft body film type solar cell assembly |
| CN101958371A (en) * | 2010-10-13 | 2011-01-26 | 中国科学院深圳先进技术研究院 | Device for manufacturing copper indium gallium selenium (CIGS) thin-film solar cells |
-
2011
- 2011-07-11 CN CN2011102086501A patent/CN102881763A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269134A (en) * | 1999-03-19 | 2000-09-29 | Japan Steel Works Ltd:The | Manufacture of polycrystalline silicon film |
| CN101689569A (en) * | 2007-08-30 | 2010-03-31 | 应用材料公司 | Be used to produce the particularly method of the metal rear contact of solar cell of semiconductor device |
| WO2010106012A2 (en) * | 2009-03-18 | 2010-09-23 | Oc Oerlikon Balzers Ag | Method of inline manufacturing a solar cell panel |
| WO2010111107A2 (en) * | 2009-03-26 | 2010-09-30 | Bp Corporation North America Inc. | Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions |
| CN101866978A (en) * | 2009-04-16 | 2010-10-20 | 张世英 | Method for continuously producing Cu-lm-Ga-S soft body film type solar cell assembly |
| CN101540349A (en) * | 2009-04-27 | 2009-09-23 | 中山大学 | Aluminized BSF secondary sintering technology for crystal silicon solar cell |
| CN101958371A (en) * | 2010-10-13 | 2011-01-26 | 中国科学院深圳先进技术研究院 | Device for manufacturing copper indium gallium selenium (CIGS) thin-film solar cells |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104913601A (en) * | 2014-12-29 | 2015-09-16 | 深圳市信宇人科技有限公司 | Method for baking lithium ion battery or battery pole piece in tunnel mode |
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Application publication date: 20130116 |