CN101866978A - Method for continuously producing Cu-lm-Ga-S soft body film type solar cell assembly - Google Patents
Method for continuously producing Cu-lm-Ga-S soft body film type solar cell assembly Download PDFInfo
- Publication number
- CN101866978A CN101866978A CN200910132770A CN200910132770A CN101866978A CN 101866978 A CN101866978 A CN 101866978A CN 200910132770 A CN200910132770 A CN 200910132770A CN 200910132770 A CN200910132770 A CN 200910132770A CN 101866978 A CN101866978 A CN 101866978A
- Authority
- CN
- China
- Prior art keywords
- film
- paper tinsel
- vacuum
- base material
- sputter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for continuously producing a Cu-lm-Ga-S soft body film type solar cell assembly. The Cu-lm-Ga-S soft body film type solar cell assembly is composed of soft body strap coiled material metal or plastic base material foil 1, the first section to the seventh section 3, 6, 9, 11, 19, 21 and 25 of a vacuum continuous tunnel, a reciprocating vulcanization furnace 14 and the like. The method is characterized in that the beginning end of the soft body strap base material foil 1 is continuously sent into the vacuum continuous tunnel magnetic control sputtering chambers 3, 6, 9 and 11; after sputtered with a Cu-lm-Ga film, the obtained product is sent into the reciprocating vulcanization furnace 14 to be vulcanized into a Cu-lm-Ga-S film; then the Cu-lm-Ga-S film is sent into the vacuum continuous tunnel magnetic control sputtering chamber 19 to be sputtered with the zinc sulphide film; then electrode stannic oxide transparent conducting film is sputtered; after a coated electrode is etched and lined by laser, an anti-reflecting film is sputtered; a protective film is packaged to prepare the coiled material Cu-lm-Ga-S soft body film type solar cell assembly. The invention has the advantages of continuous large-scale production and stable quality.
Description
Technical field:
The present invention relates to a kind of continuous production of copper indium-gallium-sulfur soft of magnetic control sputtering vacuum coating book membrane type solar module technology of utilizing.It specifically is a kind of continuous method for preparing software book membrane type solar module that is combined as a machine by many magnetic control sputtering vacuum coating machines.
Technical background:
Prior art; Strip metal or plastic rubber substrate paper tinsel coiled material with software, the section of cutting into, send into vacuum foreign material cleaning chamber and base material band paper tinsel be heated to 200-300 ℃, utilize plasma or electric glow discharge method to carry out surface irregularities cleaning after, take out base material band paper tinsel and send into the dielectric film magnetron sputtering vacuum chamber again ".Adopt silicon dioxide or titanium dioxide alloy target material to use magnetron sputtering method behind base material band paper tinsel upper panel surface sputter silicon dioxide or titanium dioxide dielectric film, take out base material band paper tinsel and send into the back electrode magnetron sputtering vacuum chamber.Adopt the copper molybdenum alloy target, use magnetron sputtering method, sputter copper molybdenum alloy back electrode film.After taking-up base material band paper tinsel carries out the laser ablation line again, take out base material band paper tinsel, send into copper indium gallium magnetron sputtering vacuum chamber, adopt copper indium gallium alloy target, use magnetron sputtering method, sputter copper indium gallium alloy film.Take out base material band paper tinsel, send into again in the sulfuration crystal growing furnace, vulcanize crystallization.Promptly finished the preparation of P type semiconductor book film.Take out base material band paper tinsel and send into " n type semiconductor layer magnetron sputtering vacuum chamber " again.Adopt ZnS zinc sulphide alloy target material, use magnetron sputtering method at copper indium gallium sulphur P type semiconductor base material band paper tinsel upper surface sputter zinc sulphide n N-type semiconductor N film.This section has formed P-n knot copper indium gallium sulphur semiconductor film base material band paper tinsel.
P-n knot copper indium gallium sulphur semiconductor film base material band paper tinsel behind the sputter takes out base material band paper tinsel and sends into top electrode transparency conducting layer ICO film magnetron sputtering vacuum chamber.Adopt the tin ash alloy target material, use magnetron sputtering method on P-n knot copper indium gallium sulphur semiconductor film base material band paper tinsel surface, sputter tin ash top electrode electrically conducting transparent ICO film.。
Base material band paper tinsel behind the sputter electrically conducting transparent ICO film takes out base material band paper tinsel, enter the etching laser machining that purifies air again, behind the etching electrode, the copper indium gallium sulphur solar module that cuts into various cell power is sent into transparent magnesium fluoride antireflective coating magnetron sputtering vacuum chamber again ".Adopt the magnesium fluoride alloy target material, use magnetron sputtering method, the transparent magnesium fluoride antireflective coating of sputter.Then enter the Vacuum Package chamber, enter cooling chamber again behind the encapsulation transparent protective film, be cooled to the finished product copper indium gallium sulphur solar module below 50 ℃.
Summary of the invention;
The objective of the invention is; Overcome the shortcoming of above-mentioned batch production, a kind of continuous production is provided, and can improve the preparation method of large-scale production efficient, assurance product quality.
Particular content of the present invention;
The method of a kind of continuous production software book membrane type copper indium gallium sulphur solar cell of the present invention is characterized in that; Banded coiled material metal or plastic rubber substrate paper tinsel with software, begin continuous average rate with top and be conveyed into first section of chamber, the continuous tunnel of vacuum " foreign material cleaning section ", and base material band paper tinsel is heated to 200-300 ℃, after utilizing plasma or electric glow discharge method to carry out the surface irregularities cleaning, cut down isolation with the vacuum insulation narrow slit.Base material band paper tinsel enters second section of chamber, the continuous tunnel of vacuum " dielectric film magnetron sputtering vacuum chamber " with the average rate walking.Adopt silicon dioxide or titanium dioxide alloy target material to use magnetron sputtering method at base material band paper tinsel upper surface, sputter silicon dioxide or titanium dioxide dielectric film.Cut down isolation with the vacuum insulation narrow slit again.Base material band paper tinsel continues to enter the 3rd section of chamber, the continuous tunnel of vacuum " back electrode magnetron sputtering vacuum chamber " with the average rate walking.
Promptly vertical along base material band paper tinsel direction of travel at the dorsum electrode layer magnetron sputtering chamber, in the distance that base material band paper tinsel upper surface is set, the plated film of a plurality of two ends tensionings of be arrangeding in parallel blocks line, be used for when sputter back electrode film, block back electrode copper molybdenum alloy film, no longer sputter substitutes former laser ablation crossed process at the surface of insulating layer of base material band paper tinsel.
Adopt the copper molybdenum alloy target, use magnetron sputtering method, at the surface of insulating layer sputter copper molybdenum alloy back electrode film of base material band paper tinsel
Sputter and block line after copper molybdenum alloy back electrode base material band paper tinsel, cut down isolation by the vacuum insulation narrow slit.The continuous walking with average rate enters the 4th section of chamber, the continuous tunnel of vacuum " copper indium gallium magnetron sputtering vacuum chamber ", is that anti-oxidation feeds hydrogen and argon gas earlier before vacuumizing.Adopt copper indium gallium alloy target, use magnetron sputtering method, sputter copper indium gallium alloy film.
The base material band paper tinsel of sputter copper indium gallium alloy film cuts down isolation by the vacuum insulation narrow slit.Continue the average rate walking and enter in the reciprocating type sulfuration crystal growing furnace, vulcanize crystallization.Curing medium is H
2Carry out vulcanizing treatment in the low temperature oven of S gas or S powder, utilize argon gas to do carrier gas, curing temperature; 350--450 ℃.The base material band paper tinsel of sputter copper indium gallium alloy film cuts down isolation by the vacuum insulation narrow slit after back and forth travel time is 10-20 minute in vulcanizing oven, and average rate enters reciprocating type cooling chamber continuously.Copper indium gallium sulphur base material band paper tinsel after the sulfuration crystallization is cooled to 200-250 ℃, has promptly finished the preparation of P type semiconductor book film.Cut down by the vacuum insulation narrow slit and to send into the 5th section of chamber, the continuous tunnel of vacuum " n type semiconductor layer magnetron sputtering vacuum chamber " again.Adopt ZnS zinc sulphide alloy target material, use magnetron sputtering method at copper indium gallium sulphur P type semiconductor base material band paper tinsel upper surface sputter zinc sulphide n N-type semiconductor N film.This section has formed P-n knot copper indium gallium sulphur semiconductor film base material band paper tinsel.
P-n behind the sputter ties copper indium gallium sulphur semiconductor film base material band paper tinsel, cuts down by the vacuum insulation narrow slit and sends into the 6th section of chamber, the continuous tunnel of vacuum " top electrode transparency conducting layer ICO film magnetron sputtering vacuum chamber " again.Adopt the tin ash alloy target material, use magnetron sputtering method on P-n knot copper indium gallium sulphur semiconductor film base material band paper tinsel surface, sputter tin ash top electrode electrically conducting transparent ICO film.
Base material band paper tinsel behind the sputter electrically conducting transparent ICO film, cut down isolation by the vacuum insulation narrow slit, average rate enters the etching laser machining that purifies air continuously again, behind the etching electrode, cut down by the vacuum insulation narrow slit, send into the 7th section of chamber, the continuous tunnel of vacuum " transparent magnesium fluoride antireflective coating magnetron sputtering vacuum chamber " again.Adopt the magnesium fluoride alloy target material, use magnetron sputtering method to cross on the base material band paper tinsel surface of electrically conducting transparent ICO film the transparent magnesium fluoride antireflective coating of sputter magnetic at sputter.Use the vacuum insulation narrow slit to cut down and isolate closing vacuum chamber.Then enter the Vacuum Package chamber; after laying electrode, the encapsulation transparent protective film enters cooling chamber again; be cooled to the finished product copper indium gallium sulphur solar module band paper tinsel below 50 ℃; behind the up-coiler coiling, cut into the copper indium gallium sulphur solar module of various cell power again according to the needs of user power.
All systems' copper indium gallium sulphur solar module band paper tinsel is by solar module band paper tinsel up-coiler coiling power, drives band paper tinsel tensioning and average rate walking continuously, in chamber, the continuous tunnel of each vacuum section, finishes sputter rete separately simultaneously.When the preposition roll coil of strip of production line finishes sputter, preceding end of reel end and volume top, back can be overlapped, to realize the production work efficiency that do not stop continuously.
All system is with paper tinsel sputter material thickness, degree of crystallinity, temperature all to adopt the control of closed loop robot control system(RCS), to guarantee the quality of product.
Description of drawings;
Figure " 1 " is the continuous tunnel type magnetic control sputtering plating of a vacuum system schematic;
Figure " 2 " is the 3rd section of chamber, the continuous tunnel of vacuum " back electrode magnetron sputtering vacuum chamber ", blocks sputter back electrode copper molybdenum alloy film, substitutes former laser ablation line.The cross section schematic diagram;
Among the figure;
1, banded coiled material metal of software or plastic rubber substrate paper tinsel
2, the banded coiled material metal of software or plastic rubber substrate paper tinsel volume
3, first section " the foreign material cleaning section in chamber, the continuous tunnel of vacuum
4, heater 5, plasma or glow discharge generator
6, second section of chamber, the continuous tunnel of vacuum " insulating barrier magnetron sputtering vacuum chamber "
7, silicon dioxide or titanium dioxide alloy target material
8, the back electrode plated film blocks line
9, the 3rd section of chamber, the continuous tunnel of vacuum " back electrode magnetron sputtering vacuum chamber "
10, copper molybdenum alloy target 11, the 4th section " the copper indium gallium magnetron sputtering vacuum chamber " 12 in chamber, the continuous tunnel of vacuum, copper indium gallium alloy target
13-
1---10, the vacuum insulation narrow slit cuts down 14, reciprocating type vulcanizing oven
15, sulphur steam generator 16, bending roller 17, compound cooling chamber
18, radiator
19, the 5th section of chamber, the continuous tunnel of vacuum " zinc sulphide magnetron sputtering vacuum chamber "
20, zinc sulphide alloy target material 21, the 6th section " the top electrode transparency conducting layer ICO film magnetron sputtering vacuum chamber " 22 in chamber, the continuous tunnel of vacuum, tin ash alloy target material
23, etching laser machining 24, etching electrode 25, the 7th section " transparent magnesium fluoride antireflective coating magnetron sputtering vacuum chamber " the 26 magnesium fluoride alloy target materials in chamber, the continuous tunnel of vacuum, 27, Vacuum Package chamber 28, transparent protective film
29, cooling chamber 30, copper indium gallium sulphur solar module band paper tinsel,
31, copper indium gallium sulphur solar module band paper tinsel up-coiler
32, back electrode copper molybdenum alloy film 33, negative electrode
34, silicon dioxide or titanium dioxide insulating barrier 35, permanent magnet
With reference to the description of drawings embodiment;
The continuous tunnel type magnetic control sputtering plating of Fig. 1 vacuum system schematic
In figure " 1 "
With the banded coiled material metal or the plastic rubber substrate paper tinsel 1 of software, top begins continuous average rate and sends into first section of chamber, the continuous tunnel of vacuum " foreign material cleaning section " 3, and by heater 4, with base material band paper tinsel 1, is heated to 200-300 ℃.Utilize plasma or glow discharge generator 5, the plasma of generation or glow discharge bombarding base material band paper tinsel 1 after carrying out surface irregularities cleaning and handling, cut down 13-with the vacuum insulation narrow slit
1Isolate.Base material band paper tinsel 1 after the cleaning enters second section " the insulating barrier magnetron sputtering vacuum chamber " 6 in chamber, the continuous tunnel of vacuum with the average rate walking.Adopt silicon dioxide or titanium dioxide alloy target material 7, use magnetron sputtering method at base material band paper tinsel 1 upper surface, sputter silicon dioxide or titanium dioxide dielectric film.Cut down 13-with the vacuum insulation narrow slit again
2Isolate.Base material band paper tinsel 1 continues to enter the 3rd section " the back electrode magnetron sputtering vacuum chamber " 9 in chamber, the continuous tunnel of vacuum with the average rate walking.Promptly vertical along base material band paper tinsel 1 direction of travel at back electrode magnetron sputtering chamber 9, base material band paper tinsel 1 upper surface, the setpoint distance height, the plated film of a plurality of two ends tensionings of be arrangeding in parallel blocks line 8, be used for when sputter back electrode film, block back electrode copper molybdenum alloy film, no longer sputter substitutes former laser ablation line at the surface of insulating layer of base material band paper tinsel 1.
Adopt copper molybdenum alloy target 10, use magnetron sputtering method, sputter copper molybdenum alloy back electrode film.Sputter and block into line after copper molybdenum alloy back electrode base material band paper tinsel 1, cut down 13-by the vacuum insulation narrow slit
3, isolate.The continuous walking with average rate enters the 4th section of chamber, the continuous tunnel of vacuum " copper indium gallium magnetron sputtering vacuum chamber 11 ", is that anti-oxidation feeds hydrogen and argon gas earlier before vacuumizing.Adopt copper indium gallium alloy target 12, use magnetron sputtering method, sputter copper indium gallium alloy film.Temperature 200-250 ℃.
The base material band paper tinsel 1 of sputter copper indium gallium alloy film cuts down 13-by the vacuum insulation narrow slit
4Isolate.Continue the average rate walking and enter reciprocating type sulfuration crystal growing furnace 14, vulcanize crystallization.Curing medium is H
2Carry out vulcanizing treatment in the low temperature oven of S gas or S powder, utilize argon gas to do carrier gas, sulfur vapor is produced by sulphur steam generator 15.Curing temperature is 350--450 ℃.The base material band paper tinsel 1 of sputter copper indium gallium alloy film after reciprocal travel time 10-20 minute, cuts down 13-by the vacuum insulation narrow slit in sulfuration crystal growing furnace 14
5Isolate.Average rate enters reciprocating type cooling chamber 17 continuously.High temperature copper indium gallium sulphur base material band paper tinsel 1 after the sulfuration crystallization by radiator 18, is cooled to 200-250 ℃, has promptly finished the preparation of P type semiconductor book film.Cut down 13-by the vacuum insulation narrow slit
6, send into the 5th section " the zinc sulphide magnetron sputtering vacuum chamber 19 in chamber, the continuous tunnel of vacuum again.Adopt zinc sulphide alloy target material 20, use magnetron sputtering method at copper indium gallium sulphur P type semiconductor base material band paper tinsel upper surface sputter zinc sulphide n N-type semiconductor N film.This section has formed P-n knot copper indium gallium sulphur semiconductor film base material band paper tinsel.
P-n knot copper indium gallium sulphur semiconductor film base material band paper tinsel behind the sputter cuts down 13-by the vacuum insulation narrow slit
7, send into the 6th section of chamber, the continuous tunnel of vacuum " top electrode transparency conducting layer ICO film magnetron sputtering vacuum chamber " 21 again.Adopt tin ash alloy target material 22, use magnetron sputtering method, on P-n knot copper indium gallium sulphur semiconductor film base material band paper tinsel surface, sputter tin ash, top electrode electrically conducting transparent ICO film.
Base material band paper tinsel 1 behind the sputter electrically conducting transparent ICO film cuts down 13-by the vacuum insulation narrow slit
8Isolate.Average rate enters etching laser machining 23 continuously again, and electrode 24 is drawn in the laser beam erosion, behind the etching electrode, cuts down 13-by the vacuum insulation narrow slit
9, send into the 7th section of chamber, the continuous tunnel of vacuum " transparent magnesium fluoride antireflective coating magnetron sputtering vacuum chamber " 25 again.Adopt magnesium fluoride alloy target material 26, use magnetron sputtering method to cross on the base material band paper tinsel surface of electrically conducting transparent ICO film the transparent magnesium fluoride antireflective coating of sputter at sputter.Use the vacuum insulation narrow slit to cut down 13-
10Isolate closing vacuum chamber.Then enter Vacuum Package chamber 27; behind the encapsulation transparent protective film 28; enter cooling chamber 29 again; be cooled to the finished product copper indium gallium sulphur solar module band paper tinsel 30 below 50 ℃; behind up-coiler coiling 31, cut into the copper indium gallium sulphur solar module of various cell power again according to the needs of user power.
Fig. 2; Sputter back electrode copper molybdenum alloy film is blocked in the 3rd section of chamber, the continuous tunnel of vacuum " back electrode magnetron sputtering vacuum chamber ", substitutes former laser ablation line.The cross section schematic diagram;
In Fig. 2;
In the 3rd section " the back electrode magnetron sputtering vacuum chamber " 9 in chamber, the continuous tunnel of vacuum, the upside setting, permanent magnet 35 is successively by dress negative electrode 33, copper molybdenum alloy target 10.On the banded coiled material metal of downside software or own sputter silicon dioxide of plastic rubber substrate paper tinsel 1 upper surface or titanium dioxide insulating barrier 34 surfaces, in the height distance of setting, the back electrode plated film is installed is blocked line 8, make the banded coiled material metal of software or the plastic rubber substrate paper tinsel 1 of continuous walking, do not produce friction.The secondary electron that sputter produces is accelerated into high energy electron in negative electrode 33 potential drop districts, under the associating in electric field and permanent magnet 35 magnetic fields, fly to silicon dioxide or titanium dioxide insulating barrier 34 do cycloid motion.Because the back electrode plated film blocks line 8 and blocks, do not block the surface, place, sputter back electrode copper molybdenum alloy film 32, plated film blocks line 8 and blocks the place, and therefore end energy sputter rete has substituted the laser ablation crossed process.
Claims (2)
1. the continuous method of production of copper indium-gallium-sulfur soft book membrane type solar module: it is by the banded coiled material metal of software or plastic rubber substrate paper tinsel (1), chamber, the continuous tunnel of vacuum first, to the 7th section (6), (9), (11), (19), (21), (25) and reciprocating type vulcanizing oven compositions such as (14), it is characterized in that; Banded coiled material metal or plastic rubber substrate paper tinsel (1) with software, top begins continuous average rate and sends into first section of chamber, the continuous tunnel of vacuum " foreign material cleaning section " (3), and by heater (4), with base material band paper tinsel (1), be heated to 200-300 ℃: utilize plasma or glow discharge generator (5), the plasma or the glow discharge bombarding base material band paper tinsel (1) that take place after carrying out the surface irregularities cleaning and handling, cut down (13-with the vacuum insulation narrow slit
1) isolate: the base material band paper tinsel (last 1) after the cleaning, enter second section of chamber, the continuous tunnel of vacuum " insulating barrier magnetron sputtering vacuum chamber " (6) with the average rate walking, adopt silicon dioxide or titanium dioxide alloy target material (7), with magnetron sputtering method at base material band paper tinsel (1) upper surface, sputter silicon dioxide or titanium dioxide dielectric film cut down (13-with the vacuum insulation narrow slit again
2) isolate, base material band paper tinsel (1) continues to enter the 3rd section of chamber, the continuous tunnel of vacuum " back electrode magnetron sputtering vacuum chamber " (9) with the average rate walking, promptly vertical along base material band paper tinsel (1) direction of travel at back electrode magnetron sputtering chamber (9), base material band paper tinsel (1) surface, the setpoint distance height, the plated film of a plurality of two ends tensionings of be arrangeding in parallel blocks line (8), be used for when sputter back electrode film, block back electrode copper molybdenum alloy film, no longer sputter is at the surface of insulating layer of base material band paper tinsel 1, substitute former laser ablation line: adopt copper molybdenum alloy target (10), use magnetron sputtering method, sputter copper molybdenum alloy back electrode film, sputter and block into line after copper molybdenum alloy back electrode base material band paper tinsel (1), cut down (13-by the vacuum insulation narrow slit
3) isolate, the continuous walking with average rate enters the 4th section of chamber, the continuous tunnel of vacuum " copper indium gallium magnetron sputtering vacuum chamber (11) ", for anti-oxidation feeds hydrogen and argon gas earlier before vacuumizing: adopt copper indium gallium alloy target (12), use magnetron sputtering method, sputter copper indium gallium alloy film.Temperature 200-250 ℃, the base material band paper tinsel (1) of sputter copper indium gallium alloy film cuts down (13-by the vacuum insulation narrow slit
4) isolate, continue the average rate walking and enter reciprocating type sulfuration crystal growing furnace (14), vulcanize crystallization: curing medium is H
2Carry out vulcanizing treatment in the low temperature oven of S gas or S powder, utilize argon gas to do carrier gas, sulfur vapor is produced by sulphur steam generator (15), and curing temperature is 350--450 ℃.The base material band paper tinsel (1) of sputter copper indium gallium alloy film after reciprocal travel time 25-32 minute, cuts down (13-by the vacuum insulation narrow slit in sulfuration crystal growing furnace (14)
5) isolate, average rate enters reciprocating type cooling chamber (17) continuously: the high temperature copper indium gallium sulphur base material band paper tinsel (1) that will vulcanize after the crystallization passes through radiator (18), is cooled to 200-250 ℃, has promptly finished the preparation of P type semiconductor book film: cut down (13-by the vacuum insulation narrow slit
6), send into again the 5th section of chamber, the continuous tunnel of vacuum " zinc sulphide magnetron sputtering vacuum chamber (19); adopt zinc sulphide alloy target material (20); use magnetron sputtering method at copper indium gallium sulphur P type semiconductor base material band paper tinsel upper surface sputter zinc sulphide n N-type semiconductor N film: this section has formed P-n knot copper indium gallium sulphur semiconductor film base material band paper tinsel: the P-n knot copper indium gallium sulphur semiconductor film base material band paper tinsel behind the sputter, cut down (13-by the vacuum insulation narrow slit
7), send into the 6th section of chamber, the continuous tunnel of vacuum " top electrode transparency conducting layer ICO film magnetron sputtering vacuum chamber " (21) again, adopt tin ash alloy target material (22), use magnetron sputtering method, on P-n knot copper indium gallium sulphur semiconductor film base material band paper tinsel surface, the sputter tin ash, top electrode electrically conducting transparent ICO film: the base material band paper tinsel (1) behind the sputter electrically conducting transparent ICO film, cut down (13-by the vacuum insulation narrow slit
8) isolate, average rate enters etching laser machining (23) continuously again, and electrode (24) is drawn in the laser beam erosion, behind the etching electrode, cuts down (13-by the vacuum insulation narrow slit
9), send into the 7th section of chamber, the continuous tunnel of vacuum " transparent magnesium fluoride antireflective coating magnetron sputtering vacuum chamber " (25) again: adopt magnesium fluoride alloy target material (26), use magnetron sputtering method to cross on the base material band paper tinsel surface of electrically conducting transparent ICO film the transparent magnesium fluoride antireflective coating of sputter at sputter.Use the vacuum insulation narrow slit to cut down (13-
10) isolation closing vacuum chamber; then enter Vacuum Package chamber (27); behind the encapsulation transparent protective film (28); enter cooling chamber (29) again; be cooled to the finished product copper indium gallium sulphur solar module band paper tinsel (30) below 50 ℃; behind up-coiler coiling (31), cut into the copper indium gallium sulphur solar module of various cell power again according to the needs of user power.
2. according to the method for the described continuous production of copper indium-gallium-sulfur soft book membrane type solar module of claims (1), it is characterized in that; In chamber, the continuous tunnel of vacuum in the 3rd section " back electrode magnetron sputtering vacuum chamber " (9), upside is provided with permanent magnet (35) successively by dress negative electrode (33), copper molybdenum alloy target (10): on the banded coiled material metal of downside software or own sputter silicon dioxide of plastic rubber substrate paper tinsel (1) upper surface or titanium dioxide insulating barrier (34) surface, in the height distance of setting, the back electrode plated film is installed is blocked line (8), make the banded coiled material metal of software or the plastic rubber substrate paper tinsel (1) of continuous walking, do not produce friction: the secondary electron that sputter produces is accelerated into high energy electron in negative electrode (33) potential drop district, under the associating in electric field and permanent magnet (35) magnetic field, fly to silicon dioxide or titanium dioxide insulating barrier (34) do cycloid motion, because the back electrode plated film blocks the reason that line (8) blocks, do not block the surface, place, sputter back electrode copper molybdenum alloy film (32), plated film blocks line (8) and blocks the place, therefore end energy sputter rete has substituted the laser ablation crossed process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910132770A CN101866978A (en) | 2009-04-16 | 2009-04-16 | Method for continuously producing Cu-lm-Ga-S soft body film type solar cell assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910132770A CN101866978A (en) | 2009-04-16 | 2009-04-16 | Method for continuously producing Cu-lm-Ga-S soft body film type solar cell assembly |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101866978A true CN101866978A (en) | 2010-10-20 |
Family
ID=42958613
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910132770A Pending CN101866978A (en) | 2009-04-16 | 2009-04-16 | Method for continuously producing Cu-lm-Ga-S soft body film type solar cell assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101866978A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881763A (en) * | 2011-07-11 | 2013-01-16 | 刘莹 | Equipment for manufacturing back electrode of crystalline silicon solar cell by laser sintering |
| CN102903787A (en) * | 2011-07-29 | 2013-01-30 | 刘莹 | Equipment for preparing aluminum back electrode of schottky junction single-face electrode solar cell |
-
2009
- 2009-04-16 CN CN200910132770A patent/CN101866978A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881763A (en) * | 2011-07-11 | 2013-01-16 | 刘莹 | Equipment for manufacturing back electrode of crystalline silicon solar cell by laser sintering |
| CN102903787A (en) * | 2011-07-29 | 2013-01-30 | 刘莹 | Equipment for preparing aluminum back electrode of schottky junction single-face electrode solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Vanalakar et al. | A review on pulsed laser deposited CZTS thin films for solar cell applications | |
| EP3389122A1 (en) | Cathode current collector, method of preparing the cathode current collector, and battery with the cathode current collector | |
| JPWO2003021706A1 (en) | Manufacturing method of electrochemical element | |
| WO2013163948A1 (en) | Method for preparing transparent conductive oxide film | |
| CN102496659A (en) | Preparation method for copper zinc tin sulfide thin film material | |
| CN106784988A (en) | A kind of flexible all solid-state thin-film lithium battery and its production method | |
| CN101771105A (en) | Method for preparing CIGS thin film solar cell in continuous production line | |
| CN101866978A (en) | Method for continuously producing Cu-lm-Ga-S soft body film type solar cell assembly | |
| CN101764181A (en) | Method for preparing copper-indium-gallium-selenium (CIGS) flexible solar cell by using combination process of magnetic control sputtering method and co-evaporation method | |
| CN103400895A (en) | Preparation method of thin film of copper-zinc-tin-sulphur solar battery absorption layer | |
| CN106653897A (en) | Copper, zinc, tin, sulfur and selenium thin film solar cell and preparation method therefor | |
| KR101777598B1 (en) | method for manufacturing solar cell | |
| TW200913284A (en) | Method for the production of a transparent conductive oxide coating | |
| KR101582200B1 (en) | A method for preparing CZTS thin film for solar cell | |
| KR101441942B1 (en) | Flexible thin film type Solar Cell and Method for manufacturing the same | |
| KR20140129037A (en) | Method for manufacturing compound solar cell | |
| CN112259620A (en) | Sb2Se3Thin film solar cell and preparation method thereof | |
| CN101859810A (en) | Method for industrially producing copper-indium-gallium-sulfur soft film type solar battery assembly | |
| CN101509122A (en) | Process for producing microwave plasma of cuprous iodide semi-conducting film | |
| CN103985783A (en) | Method for preparing copper zinc tin sulfide thin film on flexible substrate through magnetron sputtering method | |
| JP6083785B2 (en) | Compound solar cell and method for producing the same | |
| CN116322072A (en) | Preparation method of semitransparent perovskite solar cell | |
| CN104051577A (en) | Manufacturing method capable of improving crystallization property of copper zinc tin sulfur film of solar cell absorption layer | |
| JP2012195461A (en) | Method and device for manufacturing solar battery cell and method of manufacturing solar battery module | |
| TW201037851A (en) | Method and apparatus for irradiating a photovoltaic material surface by laser energy |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| DD01 | Delivery of document by public notice |
Addressee: Zhang Shiying Document name: Notification of before Expiration of Request of Examination as to Substance |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20101020 |