CN101526683A - Manufacturing method of LCD substrate - Google Patents
Manufacturing method of LCD substrate Download PDFInfo
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- CN101526683A CN101526683A CN200810101546A CN200810101546A CN101526683A CN 101526683 A CN101526683 A CN 101526683A CN 200810101546 A CN200810101546 A CN 200810101546A CN 200810101546 A CN200810101546 A CN 200810101546A CN 101526683 A CN101526683 A CN 101526683A
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Abstract
The invention relates to a manufacturing method of an LCD substrate. The method comprises the following steps: a mask plate is stuck to a substrate; a thin film is deposited on the substrate stuck to the mask plate; and the mask plate is moved away from the substrate on which the thin film is deposited, and a film pattern is formed on the substrate. The invention provides a fully new thin film process, and the steps of cleaning, film depositing, exposure, developing, etching and stripping of the traditional photoetching process are simplified into cleaning, film forming, a small amount of dry etching, and the like, therefore, the invention simplifies the manufacturing device and the process to the utmost extent, reduces the process time, improves the capacity, effectively avoids the defective substrates, saves the investment of the equipment, reduces the maintenance expenses of the equipment and reduces the production cost to the utmost extent.
Description
Technical field
The present invention relates to a kind of LCD manufacture method, especially a kind of manufacture method of LCD substrate.
Background technology
In panel display apparatus, LCD (Liquid Crystal Display, be called for short LCD) has that volume is little, low in energy consumption, manufacturing cost is relatively low and characteristics such as radiationless, has occupied leading position in current flat panel display market.With Thin Film Transistor-LCD (Thin Film TransistorLiquid Crystal Display, be called for short TFT-LCD) be example, TFT-LCD is become box-like with color membrane substrates by array base palte, and what wherein array base palte was at present commonplace is 5 masks (5mask) or the manufacturing of 4 masks (4mask) technology of adopting main flow.With 5 mask process is example, its main technique is divided into five steps, be respectively: form grid and grid line, formation gate insulation layer and semiconductor layer, formation source-drain electrode layer and data line, formation passivation layer, form pixel electrode, and the pattern of each step is all realized by conventional lithography process.
At present, conventional lithography process comprises cleaning, deposited film, exposure, development, etching and process such as peels off that these steps play material impact to the formation of each pattern on the TFT-LCD array base palte.Wherein, cleaning is that substrate is cleaned, to remove bad particle or the organism on the glass substrate; Deposited film is meant depositing metal films (grid, data line or pixel electrode) and nonmetal film (gate insulation layer, semiconductor layer or passivation layer); Exposure is to adopt ultraviolet light to be radiated on the photoresist by mask plate, and with photoresist sensitization, development is by developer solution the photoresist of sensitization part to be got rid of, thereby forms needed array pattern; Etching is by wet quarter and dry carving technology etching required array pattern; Peeling off is the photoresist of removing on the array pattern.
Fig. 7 a～Fig. 7 e is the synoptic diagram of conventional lithography process, is the operating process of example simple declaration conventional lithography process to form gate electrode on substrate.At first deposition layer of metal film 11 on substrate 1 applies one deck photoresist 20 (shown in Fig. 7 a) then on metallic film 11; Adopt mask plate to pass through ultraviolet light 30 exposures (shown in Fig. 7 b) afterwards; Develop the back only at gate electrode position reservation photoresist pattern (shown in Fig. 7 c); Remove the metallic film (as Fig. 7 d shown in) of photoresist pattern by etching technics afterwards with exterior domain; Peel off remaining photoresist at last, form gate electrode 2 patterns (shown in Fig. 7 e).Existing mask plate structure is by forming enough meticulous figure on substrate, making that the ultraviolet light permeation parts can then be got rid of at developing procedure photoresist sensitization with the photoresist of sensitization part, form the pattern that needs behind the UV-irradiation mask plate.The mask pattern of mask plate is transparent mould, translucent mould, poroid or other structure.
In the actual production process, because the productive unit that conventional lithography process relates to is more, equipment (as exposure sources, developing apparatus, wet quarter equipment, peel-off device etc.) purchase cost height, the maintenance cost height, therefore improved the manufacturing cost of array base palte, and, had some airborne floatability particles inevitably and drop on the substrate because the operation that conventional lithography process relates to is many, the time is long, cause substrate bad, further improved the manufacturing cost of substrate.
Summary of the invention
The manufacture method that the purpose of this invention is to provide a kind of LCD substrate has characteristics such as productive unit is few, operation is few, the time is short, effectively reduces production costs.
To achieve these goals, the invention provides a kind of manufacture method of LCD substrate, comprising:
Described step 10 is specially: shape is closely pressed together on the described substrate with the size mask plate identical with described substrate, makes described mask plate and substrate strict counterpoint by alignment mark.
Described step 20 can be specially: with 100 ℃～250 ℃ depositing temperature depositing metal films, also can be specially on the substrate of completing steps 10: the depositing temperature with 150 ℃～350 ℃ on the substrate of completing steps 10 deposits nonmetal film.
On the technique scheme basis, the thickness of described mask plate is 5 μ m～50 μ m.Further, the edge of pattern has 30 °～60 ° the angle of gradient on the described mask plate.
On the technique scheme basis, described mask plate is made by anti-oxidant, high temperature resistant, corrosion-resistant material.Further, described mask plate can be made by micanite or polytetrafluoroethylmaterial material, also can be made by polyetherketone compound substance or carbon nanotube compound substance.
The present invention proposes a kind of manufacture method of LCD substrate, many at flow process in the conventional lithography process, apparatus expensive, manufacturing cost high-technology defective, a kind of brand-new thin-film technique has been proposed, cleaning with conventional lithography process, deposited film, exposure, develop, etching and step such as peel off and be reduced to cleaning, film forming, steps such as a small amount of dried quarter, do not re-use the exposure in the conventional lithography process, develop, etching and peel off the unit, manufacturing equipment and technology have been simplified to greatest extent, shortened the process time, improved production capacity, because operation is few, that has avoided effectively that substrate is subjected to that the floatability affected causes in the air is bad, owing to do not re-use exposure and developing cell in the conventional lithography process, save equipment investment, reduced equipment maintenance cost, reduced production cost to greatest extent.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Description of drawings
Fig. 1 is the process flow diagram of the manufacture method of LCD substrate of the present invention;
Fig. 2 a～Fig. 2 d forms the synoptic diagram of grid line and gate electrode for the present invention;
Fig. 3 a～Fig. 3 e forms the synoptic diagram of active layer for the present invention;
Fig. 4 a～Fig. 4 e forms the synoptic diagram of data line, source electrode and drain electrode for the present invention;
Fig. 5 a～Fig. 5 d forms the synoptic diagram of passivation layer for the present invention;
Fig. 6 a～Fig. 6 d forms the synoptic diagram of pixel electrode for the present invention;
Fig. 7 a～Fig. 7 e is the synoptic diagram of conventional lithography process.
Description of reference numerals:
The 1-substrate; The 2-gate electrode; The 3-gate insulation layer;
The 4-active layer; 5-source electrode; The 6-drain electrode;
The 7-passivation layer; The 8-grid line; The 9-data line;
The 10-pixel electrode; 11-grid metallic film; Metallic film is leaked in the 12-source;
The 20-photoresist; The 30-ultraviolet light; 41-first mask plate;
42-second mask plate; 43-the 3rd mask plate; 44-the 4th mask plate;
45-the 5th mask plate.
Embodiment
Fig. 1 is the process flow diagram of the manufacture method of LCD substrate of the present invention, is specially:
The manufacture method of LCD substrate of the present invention is many at flow process in the conventional lithography process, apparatus expensive, manufacturing cost high-technology defective, a kind of brand-new thin-film technique has been proposed, cleaning with conventional lithography process, deposited film, exposure, develop, etching and step such as peel off and be reduced to cleaning, film forming, steps such as a small amount of dried quarter, do not re-use the exposure in the conventional lithography process, develop, etching and peel off the unit, manufacturing equipment and technology have been simplified to greatest extent, shortened the process time, avoided technology bad, saved equipment investment simultaneously, reduce equipment maintenance cost, reduced production cost to greatest extent.
The manufacture method of LCD substrate of the present invention not only can be applied among the preparation technology of array base palte in the LCD, also can be used for also can be used in the manufacturing process of semi-conductor chip among the preparation technology of color membrane substrates in the LCD.Be example with five mask process below, the preparation process by the TFT-LCD array base palte further specifies technical scheme of the present invention.
Fig. 2 a Fig. 2 d forms the synoptic diagram of grid line and gate electrode for the present invention, and wherein Fig. 2 a forms planimetric map behind grid line and the gate electrode figure for the present invention, Fig. 2 b～Fig. 2 d be among Fig. 2 a A-A to sectional view.Cleaning base plate (as glass substrate) at first, with first mask plate 41 and substrate 1 close apposition (shown in Fig. 2 b), directly deposit grid metallic film 11 (shown in Fig. 2 c) then in the above, remove first mask plate 41 afterwards, on substrate 1, form complete grid line 8 and gate electrode 2 figures (shown in Fig. 2 d).
Fig. 3 a～Fig. 3 e forms the synoptic diagram of active layer for the present invention, and wherein Fig. 3 a is the planimetric map behind the present invention the forms active layer pattern, Fig. 3 b～Fig. 3 e be among Fig. 3 a B-B to sectional view.Cleaning base plate at first, directly depositing gate insulation layer 3 (shown in Fig. 3 b) above the substrate 1, with second mask plate 42 and substrate 1 close apposition (shown in Fig. 3 c), directly deposit active layer 4 (shown in Fig. 3 d) then in the above, active layer comprises semiconductor layer and doping semiconductor layer, remove second mask plate 42 afterwards, on substrate 1, form complete active layer 4 figures (shown in Fig. 3 e).
Fig. 4 a～Fig. 4 e forms the synoptic diagram of data line, source electrode and drain electrode for the present invention, and wherein Fig. 4 a forms planimetric map behind data line, source electrode and the drain electrode figure for the present invention, Fig. 4 b～Fig. 4 e be among Fig. 4 a C-C to sectional view.Cleaning base plate at first, with the 3rd mask plate 43 and substrate 1 close apposition (shown in Fig. 4 b), direct in the above then sedimentary origin leaks metallic film 12 (shown in Fig. 4 c), remove the 3rd mask plate 43 afterwards, on substrate 1, form complete data line 9, source electrode 5 and drain electrode 6 figures (shown in Fig. 4 d), etch away doping semiconductor layer in the active layer fully by dry carving technology afterwards, form the TFT raceway groove, on substrate 1, form complete data line, source electrode and drain electrode figure (shown in Fig. 4 e).By dry carving technology etching doping semiconductor layer the time, the gate insulation layer that exposes also can correspondingly be etched, but because the thickness of gate insulation layer is greater than the thickness of doping semiconductor layer, and by technology setting (selecting) as etching gas, can be implemented in when etching away doping semiconductor layer fully, only etch away the gate insulation layer of segment thickness, therefore less to the influence of gate insulation layer effect.
Fig. 5 a～Fig. 5 d forms the synoptic diagram of passivation layer for the present invention, and wherein Fig. 5 a forms planimetric map behind the passivation layer figure for the present invention, Fig. 5 b～Fig. 5 d be among Fig. 5 a D-D to sectional view.Cleaning base plate at first, with the 4th mask plate 44 and substrate 1 close apposition (shown in Fig. 5 b), direct in the above then deposit passivation layer 7 (shown in Fig. 5 c) is removed the 4th mask plate 44 afterwards, forms the passivation layer figure (shown in Fig. 5 d) that has passivation layer via hole 7a on substrate 1.
Fig. 6 a～Fig. 6 d forms the synoptic diagram of pixel electrode for the present invention, and wherein Fig. 6 a forms planimetric map behind the pixel electrode figure for the present invention, Fig. 6 b～Fig. 6 d be among Fig. 6 a E-E to sectional view.Cleaning base plate at first, with the 5th mask plate 45 and substrate 1 close apposition (shown in Fig. 6 b), direct in the above then pixel deposition electrode layer (shown in Fig. 6 c), remove the 5th mask plate 45 afterwards, form pixel electrode 10 figures on substrate 1, pixel electrode 10 is connected (shown in Fig. 6 d) by passivation layer via hole 7a with drain electrode 6.
In technique scheme of the present invention, the mask plate that uses among the preparation technology of the present invention can adopt general mask plate manufacturing process to make, it is consistent with substrate that the mask plate size design becomes, in order to prevent to produce dislocation between layer and the layer, also be provided with 4～12 alignment marks on the mask plate, guarantee closely to contact and strict counterpoint between mask plate and the substrate by alignment mark before the deposit film.In order to be unlikely to that influence is peeled off in the film generation after depositing, the thickness of mask plate should be much larger than the thickness of film, and preferably, the thickness of mask plate is 5 μ m～50 μ m.According to the concrete needs of technology, the edge of pattern can be vertical on the mask plate, also can have certain slope angle α, and angle of gradient α is preferably 30 °～60 °, shown in Fig. 2 b.The film-forming process of each layer can adopt traditional process, finishes film forming under certain high temperature, and wherein the depositing temperature of metallic film is 100 ℃～250 ℃, and the depositing temperature of nonmetal film is 150 ℃～350 ℃.Consider that mask plate can pollute mould in the repeated use process, need clean with strong acid and organic solvent, mask plate therefore of the present invention adopts anti-oxidant, high temperature resistant, corrosion-resistant material is made, present spendable material has micanite (Fluororystal mica), teflon, the polyetherketone compound substance, carbon nanotube compound substance etc., in concrete technology, can select different material mask plates according to arts demand, for example, at depositing metal films (grid line, data line, pixel electrode) can adopt the time by micanite, the mask plate that polytetrafluoroethylmaterial material is made is at deposition nonmetal film (gate insulation layer, active layer, passivation layer) can adopt the time by the polyetherketone compound substance, the mask plate that the carbon nanotube compound substance is made.
It should be noted that at last: above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not break away from the spirit and scope of technical solution of the present invention.
Claims (9)
1. the manufacture method of a LCD substrate is characterized in that, comprising:
Step 10, together with mask plate and baseplate-laminating;
Step 20, on the substrate of completing steps 10 deposit film;
Step 30, on the substrate of completing steps 20, remove described mask plate, on described substrate, form film pattern.
2. the manufacture method of LCD substrate according to claim 1, it is characterized in that, described step 10 is specially: shape is closely pressed together on the described substrate with the size mask plate identical with described substrate, makes described mask plate and substrate strict counterpoint by alignment mark.
3. the manufacture method of LCD substrate according to claim 1 is characterized in that, described step 20 is specially: on the substrate of completing steps 10 with 100 ℃～250 ℃ depositing temperature depositing metal films.
4. the manufacture method of LCD substrate according to claim 1 is characterized in that, described step 20 is specially: the depositing temperature with 150 ℃～350 ℃ on the substrate of completing steps 10 deposits nonmetal film.
5. according to the manufacture method of the described LCD substrate of arbitrary claim in the claim 1～4, it is characterized in that the thickness of described mask plate is 5 μ m～50 μ m.
6. the manufacture method of LCD substrate according to claim 5 is characterized in that, the edge of pattern has 30 °～60 ° the angle of gradient on the described mask plate.
7. according to the manufacture method of the described LCD substrate of arbitrary claim in the claim 1～4, it is characterized in that described mask plate is made by anti-oxidant, high temperature resistant, corrosion-resistant material.
8. the manufacture method of LCD substrate according to claim 7 is characterized in that, described mask plate is made by micanite or polytetrafluoroethylmaterial material.
9. the manufacture method of LCD substrate according to claim 7 is characterized in that, described mask plate is made by polyetherketone compound substance or carbon nanotube compound substance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810101546A CN101526683A (en) | 2008-03-07 | 2008-03-07 | Manufacturing method of LCD substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810101546A CN101526683A (en) | 2008-03-07 | 2008-03-07 | Manufacturing method of LCD substrate |
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| CN101526683A true CN101526683A (en) | 2009-09-09 |
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| CN200810101546A Pending CN101526683A (en) | 2008-03-07 | 2008-03-07 | Manufacturing method of LCD substrate |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544108A (en) * | 2012-01-12 | 2012-07-04 | 北京大学 | Preparation method of zinc oxide film transistor |
| CN102629571A (en) * | 2011-07-04 | 2012-08-08 | 北京京东方光电科技有限公司 | Manufacturing method for array substrate and etching equipment |
| CN103413813A (en) * | 2013-07-31 | 2013-11-27 | 北京京东方光电科技有限公司 | Array substrate, manufacturing method for array substrate and display device for array substrate |
| CN104658974A (en) * | 2015-03-12 | 2015-05-27 | 京东方科技集团股份有限公司 | Method for preparing film layer pattern, thin film transistor and array substrate |
| CN105336566A (en) * | 2014-06-27 | 2016-02-17 | 清华大学 | Preparation method of nanoscale micro structure |
| CN114318225A (en) * | 2021-12-21 | 2022-04-12 | 合肥维信诺科技有限公司 | Mask plate assembly, evaporation method of display device and display device |
| CN114835081A (en) * | 2022-03-18 | 2022-08-02 | 上海交通大学 | Forming method of island-shaped film structure and MEMS device |
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2008
- 2008-03-07 CN CN200810101546A patent/CN101526683A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102629571A (en) * | 2011-07-04 | 2012-08-08 | 北京京东方光电科技有限公司 | Manufacturing method for array substrate and etching equipment |
| CN102544108A (en) * | 2012-01-12 | 2012-07-04 | 北京大学 | Preparation method of zinc oxide film transistor |
| CN102544108B (en) * | 2012-01-12 | 2015-02-11 | 京东方科技集团股份有限公司 | Preparation method of zinc oxide film transistor |
| CN103413813A (en) * | 2013-07-31 | 2013-11-27 | 北京京东方光电科技有限公司 | Array substrate, manufacturing method for array substrate and display device for array substrate |
| CN105336566A (en) * | 2014-06-27 | 2016-02-17 | 清华大学 | Preparation method of nanoscale micro structure |
| CN105336566B (en) * | 2014-06-27 | 2018-10-02 | 清华大学 | A kind of preparation method of nanoscale microstructures |
| CN104658974A (en) * | 2015-03-12 | 2015-05-27 | 京东方科技集团股份有限公司 | Method for preparing film layer pattern, thin film transistor and array substrate |
| CN114318225A (en) * | 2021-12-21 | 2022-04-12 | 合肥维信诺科技有限公司 | Mask plate assembly, evaporation method of display device and display device |
| CN114835081A (en) * | 2022-03-18 | 2022-08-02 | 上海交通大学 | Forming method of island-shaped film structure and MEMS device |
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Open date: 20090909 |