CN101521161B - 无铅二极管的台面制作工艺 - Google Patents

无铅二极管的台面制作工艺 Download PDF

Info

Publication number
CN101521161B
CN101521161B CN2009101346788A CN200910134678A CN101521161B CN 101521161 B CN101521161 B CN 101521161B CN 2009101346788 A CN2009101346788 A CN 2009101346788A CN 200910134678 A CN200910134678 A CN 200910134678A CN 101521161 B CN101521161 B CN 101521161B
Authority
CN
China
Prior art keywords
lead
corrosion
diode
free diode
technology
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2009101346788A
Other languages
English (en)
Other versions
CN101521161A (zh
Inventor
陆国华
陈炎
吴亚红
吴刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lu Bingqi
Original Assignee
RUGAO RIXIN ELECTRONIC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RUGAO RIXIN ELECTRONIC CO Ltd filed Critical RUGAO RIXIN ELECTRONIC CO Ltd
Priority to CN2009101346788A priority Critical patent/CN101521161B/zh
Publication of CN101521161A publication Critical patent/CN101521161A/zh
Application granted granted Critical
Publication of CN101521161B publication Critical patent/CN101521161B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Weting (AREA)

Abstract

本发明公开了一种无铅二极管的台面制作工艺，所述无铅二极管芯片的台面腐蚀用酸洗腐蚀；其特征在于：所述无铅二极管芯片的台面腐蚀在酸洗腐蚀之前，先用强碱、弱碱进行两次腐蚀。以上工艺制作的为无铅二极管，且由于产品台面采用碱腐蚀工艺，使得产品的高温焊接保证为265±5℃/10秒，适用于所有产品，有利于净化环境。

Description

无铅二极管的台面制作工艺
技术领域
本发明涉及一种无铅二极管芯片的台面制作工艺，具体涉及一种熔点大于270℃，适用于集成电路、高压硅堆、多芯片及单芯片无铅二极管的台面制作工艺。
背景技术
目前，单芯片二极管的芯片台面腐蚀传统的工艺为酸洗，该工艺的缺点在于酸与无铅焊片反应导致产品断裂。
发明内容
本发明的主要任务在于提供一种无铅二极管的制作工艺。
为了解决以上技术问题，本发明的一种无铅二极管的台面制作工艺，所述无铅二极管芯片的台面腐蚀用酸洗腐蚀；其特征在于：所述无铅二极管芯片的台面腐蚀在酸洗腐蚀之前，先用强碱、弱碱进行两次腐蚀。
进一步地，所述腐蚀二极管台面的浓碱和弱碱均为氢氧化钾。
进一步地，所述氢氧化钾浓度为：8-15％，腐蚀温度为70-95℃，时间为5-15分钟。
进一步地，所述第二次腐蚀二极管台面的氢氧化钾浓度为：2-6％，腐蚀温度为70-95℃，时间为5-15分钟。
本发明的优点在于：以上工艺制作的为无铅二极管，且由于产品台面采用碱腐蚀工艺，解决酸与无铅焊片反应导致产品断裂的问题，且还使得产品的高温焊接保证为265±5℃/10秒，适用于所有产品，有利于净化环境。
附图说明
图为本发明的结构示意图。
具体实施方式
如图所示，所述二极管由电极1、焊片2、芯片3、焊片4、电极5焊接为一体，焊接后在两电极之间用硅橡胶或聚酰亚胺胶6密封，再在其组成的整体外表面用环氧树脂进行封装组成。
上述的芯片台面腐蚀工艺由传统的酸腐蚀改为先碱腐蚀后酸腐蚀。具体步骤如下：首先，用强碱进行腐蚀，本发明中所用的强碱为氢氧化钾溶液，该溶液浓度为：8-15％，腐蚀温度为70-95℃，对芯片台面的腐蚀时间为5-15分钟。
然后，用弱碱进行腐蚀，本发明中所用的弱碱为氢氧化钾溶液，其氢氧化钾浓度为：2-6％，腐蚀温度为70-95℃，时间为5-15分钟。
再用传统酸腐蚀中的第二个步骤和第三个步骤进行酸腐蚀，即用含磷酸、双氧水、去离子水的酸和含氨水、双氧水、去离子水的酸按常规方法进行腐蚀，具体步骤为常规步骤，在此故不累述。

Claims (1)

1.一种无铅二极管的台面制作工艺，所述无铅二极管芯片的台面腐蚀用酸洗腐蚀；其特征在于：所述无铅二极管芯片的台面腐蚀在酸洗腐蚀之前，先用强碱腐蚀、再用弱碱进行腐蚀；所述腐蚀二极管台面的强碱和弱碱均为氢氧化钾；所述强碱腐蚀二极管台面的氢氧化钾浓度为：8-15％，腐蚀温度为70-95℃，时间为5-15分钟；所述弱碱腐蚀二极管台面的氢氧化钾浓度为：2-6％，腐蚀温度为70-95℃，时间为5-15分钟。
CN2009101346788A 2009-04-28 2009-04-28 无铅二极管的台面制作工艺 Expired - Fee Related CN101521161B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009101346788A CN101521161B (zh) 2009-04-28 2009-04-28 无铅二极管的台面制作工艺

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009101346788A CN101521161B (zh) 2009-04-28 2009-04-28 无铅二极管的台面制作工艺

Publications (2)

Publication Number Publication Date
CN101521161A CN101521161A (zh) 2009-09-02
CN101521161B true CN101521161B (zh) 2010-09-01

Family

ID=41081675

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009101346788A Expired - Fee Related CN101521161B (zh) 2009-04-28 2009-04-28 无铅二极管的台面制作工艺

Country Status (1)

Country Link
CN (1) CN101521161B (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101924141A (zh) * 2010-09-07 2010-12-22 如皋市日鑫电子有限公司 一种适用于do-27和a-201ad封装结构的大功率二极管
CN102543721A (zh) * 2011-02-23 2012-07-04 如皋市日鑫电子有限公司 无铅二极管的台面制作工艺
CN102437131A (zh) * 2011-12-28 2012-05-02 如皋市大昌电子有限公司 聚酰亚胺钝化保护整流芯片

Also Published As

Publication number Publication date
CN101521161A (zh) 2009-09-02

Similar Documents

Publication Publication Date Title
CN107706087B (zh) 硅片的清洗方法
CN102181935B (zh) 一种制作单晶硅绒面的方法及腐蚀液
CN101521161B (zh) 无铅二极管的台面制作工艺
CN101515611A (zh) 酸碱结合的太阳电池制绒工艺
CN102867747B (zh) 一种o.j二极管生产工艺
TW201129680A (en) Acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates
CN103394484A (zh) 多晶硅太阳能电池硅片酸制绒后的清洗工艺
CN109585583A (zh) 一种用于太阳能电池片生产的制绒工艺
CN105032834A (zh) 金刚石硅片专用碱洗液及金刚石硅片清洗工艺
CN107393822A (zh) 一种具有瞬态电压抑制和整流功能的玻璃钝化续流二极管的制造方法
CN105127616A (zh) 一种免洗助焊剂
CN103413759B (zh) 一种多晶硅片的制绒方法
CN108000058B (zh) 一种高洁净限流密封垫片的制造方法
CN113314473A (zh) 一种陶瓷衬底图形化结构及其制造方法
CN102364697A (zh) 一种去除rie制绒后晶体硅表面的微损伤层的方法
CN102543721A (zh) 无铅二极管的台面制作工艺
CN101937845A (zh) 一种二极管台面处理工艺
WO2008133076A1 (ja) 酸洗用水溶液およびその製造方法ならびに資源回収方法
CN110880583A (zh) 一种提高膏栅结合的生产工艺
CN101252083A (zh) 多晶硅栅表面的清洗方法
TW200600464A (en) Method for recovering highly pure oxalic acid aqueous solution
CN103896761A (zh) 乙醛酸的复合氧化合成方法
CN202662615U (zh) 轴向二极管
WO2004029008A3 (en) Process for preparing fluorocarboxylic acids
CN101916798A (zh) 晶体硅太阳能电池选择性发射极结构的制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: LU BINGYI

Free format text: FORMER OWNER: RUGAO RIXIN ELECTRONIC CO., LTD.

Effective date: 20131211

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20131211

Address after: 226500 Jiangsu city of Rugao Province under the original town LeightonWebworks Road No. 186

Patentee after: Lu Bingqi

Address before: 226500, Jiangsu, Rugao Province under the original industrial concentration zone

Patentee before: Rugao RiXin Electronic Co., Ltd.

ASS Succession or assignment of patent right

Owner name: RUGAO RIXIN ELECTRONIC CO., LTD.

Free format text: FORMER OWNER: LU BINGYI

Effective date: 20140114

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20140114

Address after: 226500, Jiangsu, Rugao Province under the original industrial concentration zone

Patentee after: Rugao RiXin Electronic Co., Ltd.

Address before: 226500 Jiangsu city of Rugao Province under the original town LeightonWebworks Road No. 186

Patentee before: Lu Bingqi

ASS Succession or assignment of patent right

Owner name: LU BINGYI

Free format text: FORMER OWNER: RUGAO RIXIN ELECTRONIC CO., LTD.

Effective date: 20140714

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20140714

Address after: 226500 Jiangsu city of Rugao Province under the original town LeightonWebworks Road No. 186

Patentee after: Lu Bingqi

Address before: 226500, Jiangsu, Rugao Province under the original industrial concentration zone

Patentee before: Rugao RiXin Electronic Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100901

Termination date: 20170428

CF01 Termination of patent right due to non-payment of annual fee