CN101515612B - Holder structure of LED for improving lighting efficiency - Google Patents
Holder structure of LED for improving lighting efficiency Download PDFInfo
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- CN101515612B CN101515612B CN2008100093157A CN200810009315A CN101515612B CN 101515612 B CN101515612 B CN 101515612B CN 2008100093157 A CN2008100093157 A CN 2008100093157A CN 200810009315 A CN200810009315 A CN 200810009315A CN 101515612 B CN101515612 B CN 101515612B
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Abstract
The invention relates to a holder structure of an LED for improving the lighting efficiency. The holder structure comprises a body with a load-supporting part, and the load-supporting part forms a first surface, a second surface and a third surface. The first surface is used for supporting crystal grains of the LED; the second surface is connected with the first surface, and the second surface is a light reflection surface in all bands; and the third surface is the outer surface of the body and connected with the second surface. Due to the perfect reflection of lateral beams emitted by the crystal grains of the LED by the light reflection surface in all bands, the holder structure achieves the aim and the effect of improving the lighting efficiency.
Description
Technical field
The present invention relates to a kind of light-emitting diode base structure, particularly relate to a kind of light-emitting diode light extraction efficiency that is applied to promote, also can reach the light-emitting diode base structure that reduces the be lifted out optical efficiency that produces the stray light effect.
Background technology
Recently, the field that light-emitting diode is used more and more widely not only can be applied to light-emitting diode in the normal lighting, also can light-emitting diode be applied in display backlight.Yet, no matter be where light-emitting diode is applied to, mostly hope constantly to promote the luminous efficiency of light-emitting diode and the uniformity that increases bright dipping.Therefore, how can be by the design of light-emitting diode base structure, the luminous efficiency that further improves light-emitting diode again is the target of making great efforts research and development at present.
Seeing also shown in Figure 1ly, is the cutaway view of the light-emitting diode base structure 10 of existing convention.The light-emitting diode base structure 10 of existing convention is a kind of body 12 with supporting part 11, and supporting part 11 has a solid crystal face 111 and a side wall surface 112.Gu crystal face 111 is in order to being provided with LED crystal particle 20, and side wall surface 112 joins with solid crystal face 111, has the supporting part 11 of accommodation space with formation.
Yet; When the side direction light 21 that is sent by the side of LED crystal particle 20 is incident to the side wall surface 112 of supporting part 11; Because side wall surface 112 can't reflection side to light 21; And cause side direction light 21 almost completely can't to be taken, advance thereby cause the loss of light, and and then reduced the light extraction efficiency of the light-emitting diode base structure 10 of existing convention.
In addition; When the light desire penetrated optical element 30, part light can be reflected by optical element 30, and the light that is reflected can be incident on body 12 surfaces; And then the optical element 30 that is reflected out, but the light of the optical element 30 that is reflected out promptly can become stray light.See also shown in Figure 2; It is the light shape distribution map of the light-emitting diode base structure 10 of existing convention; Stray light can be in the periphery of the light-emitting diode base structure 10 bright dipping light shapes that have convention now; Form the more weak aperture 22 of a circle luminous intensity, and then the bright dipping of the light-emitting diode base structure 10 of feasible existing convention is inhomogeneous.
This shows that above-mentioned existing light-emitting diode base structure obviously still has inconvenience and defective, and demands urgently further improving in structure and use.In order to solve the problem of above-mentioned existence; Relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly; But do not see always that for a long time suitable design is developed completion, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of light-emitting diode base structure of novel be lifted out optical efficiency, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing light-emitting diode base structure exists; The inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge thereof; And cooperate the utilization of scientific principle, actively study innovation, in the hope of founding a kind of light-emitting diode base structure of novel be lifted out optical efficiency; Can improve general existing light-emitting diode base structure, make it have more practicality.Through constantly research, design, and, found out the present invention of true tool practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
The objective of the invention is to; Overcome the defective that existing light-emitting diode base structure exists; And a kind of light-emitting diode base structure of novel be lifted out optical efficiency is provided, and technical problem to be solved is to make it by the second surface at body, just the side of supporting part forms all band light reflection surface; Side direction light in order to the reflection LED crystal particle sends can reach the effect that improves the light-emitting diode base structure light extraction efficiency.
Another object of the present invention is to; A kind of light-emitting diode base structure that is lifted out optical efficiency is provided; Technical problem to be solved is to make it can absorb all band light absorbing zone of all band light again by setting; In order to absorb the light that is reflexed to body by optical element, can reach and reduce the effect that produces stray light, be very suitable for practicality.
The object of the invention and solve its technical problem and adopt following technical scheme to realize.A kind of light-emitting diode base structure that is lifted out optical efficiency according to the present invention's proposition; It is a body, has a supporting part, and is formed with a first surface, a second surface and one the 3rd surface; _ this first surface is in order to carry LED crystal particle; This second surface and this first surface join, and the 3rd surface joins with this second surface, and wherein this second surface is to be an all band light reflection surface; This main body structure is the multiple-level stack structure of all band light reflection pottery; And this second surface is a coarse inclined-plane, and wherein the 3rd surface is that the outer surface and the 3rd surface of this body is provided with an all band light absorbing zone, to be absorbed into light that is incident upon the 3rd surface and the generation that reduces stray light.
The object of the invention and solve its technical problem and also can adopt following technical measures further to realize.
The aforesaid light-emitting diode base structure that is lifted out optical efficiency, wherein said second surface forms this all band light reflection surface by an all band reflection layer.
The aforesaid light-emitting diode base structure that is lifted out optical efficiency, wherein said all band reflection layer are all band light reflection ceramic layers.
The aforesaid light-emitting diode base structure that is lifted out optical efficiency, wherein said all band light absorbing zone are all band light absorption ceramic layers.
The aforesaid light-emitting diode base structure that is lifted out optical efficiency, wherein said first surface are to be piled up by an insulating heat-conductive base material to form.
The aforesaid light-emitting diode base structure that is lifted out optical efficiency, wherein said first surface are to be piled up by an aluminium nitride base material, a silicon carbide base material or borazon base material to form.
The aforesaid light-emitting diode base structure that is lifted out optical efficiency, wherein said first surface are to be piled up by an insulating heat-conductive base material to form, and are to have a plurality of heating columns in this insulating heat-conductive base material.
The present invention compared with prior art has tangible advantage and beneficial effect.Know that by above for achieving the above object, the present invention provides a kind of light-emitting diode base structure that is lifted out optical efficiency; It is a body; Have a supporting part, and form and to be provided with a first surface, a second surface and one the 3rd surface, wherein second surface is an all band light reflection surface.
Above-mentioned light-emitting diode base structure; Wherein main body structure can be the multiple-level stack structure of all band light reflection pottery; And second surface is to be a coarse inclined-plane, and perhaps second surface can form all band light reflection surface by an all band reflection layer or all band light reflection ceramic layer.
Above-mentioned light-emitting diode base structure, it further has an all band light absorbing zone or an all band light absorption ceramic layer is arranged at the 3rd surface.Above-mentioned light-emitting diode base structure, wherein first surface is to be piled up by an insulating heat-conductive base material, an aluminium nitride base material, a silicon carbide base material or borazon base material to form.Can have a plurality of heating columns in the insulating heat-conductive base material again.
By technique scheme, the light-emitting diode base structure that the present invention can be lifted out optical efficiency has advantage and beneficial effect at least:
1, the present invention is by the second surface at body; Just the side of supporting part forms all band light reflection surface; In order to reflect the side direction light that LED crystal particle sends; Side direction light by all band light reflection surface reflection LED crystal particle sends can reach the effect that improves the light-emitting diode base structure light extraction efficiency.
2, the present invention, can reach and reduce the effect that produces stray light in order to absorb the light that is reflexed to body by optical element by all band light absorbing zone or all band light absorption ceramic layer that can absorb all band light is set, and is very suitable for practicality.
In sum, the invention relates to a kind of light-emitting diode base structure that is lifted out optical efficiency, it is the body with supporting part, and supporting part is formed with first surface, second surface and the 3rd surface.First surface is in order to carrying LED crystal particle, and second surface and first surface join, and second surface is all band light reflection surface, and the 3rd surperficially joins for the outer surface of body and with second surface again.The present invention is reflected the side direction light that LED crystal particle sent by all band light reflection surface fully, can reach the purpose that improves the light-emitting diode base structure light extraction efficiency.The present invention also can reduce the generation of stray light by the setting of all band light absorbing zone or all band light absorption ceramic layer.The present invention has above-mentioned plurality of advantages and practical value; No matter it all has bigger improvement on product structure or function; Obvious improvement is arranged technically, and produced handy and practical effect, and more existing light-emitting diode base structure has the outstanding effect of enhancement; Thereby being suitable for practicality more, really is the new design of a novelty, progress, practicality.
Above-mentioned explanation only is the general introduction of technical scheme of the present invention; Understand technological means of the present invention in order can more to know; And can implement according to the content of specification, and for let of the present invention above-mentioned with other purposes, feature and advantage can be more obviously understandable, below special act preferred embodiment; And conjunction with figs., specify as follows.
Description of drawings
Fig. 1 is the cutaway view of the light-emitting diode base structure of existing convention.
Fig. 2 is the light shape distribution map of the light-emitting diode base structure of existing convention.
Fig. 3 is a kind of profile that is lifted out light-emitting diode base structure first embodiment of optical efficiency of the present invention.
Fig. 4 is a kind of profile that is lifted out light-emitting diode base structure second embodiment of optical efficiency of the present invention.
Fig. 5 is a kind of profile that is lifted out light-emitting diode base structure the 3rd embodiment of optical efficiency of the present invention.
Fig. 6 is a kind of profile that is lifted out light-emitting diode base structure the 4th embodiment of optical efficiency of the present invention.
Fig. 7 is a kind of profile that is lifted out light-emitting diode base structure the 5th embodiment of optical efficiency of the present invention.
10: the light-emitting diode base structure 11 of existing convention: supporting part
111: Gu crystal face 112: side wall surface
12: body 20: LED crystal particle
21: side direction light 22: aperture
30: optical element 40: light-emitting diode base structure
41: body 42: supporting part
421: first surface 422: second surface
423: the three surfaces 50: all band reflection layer
60: all band light absorbing zone 70: the insulating heat-conductive base material
71: heating column
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention; Below in conjunction with accompanying drawing and preferred embodiment; To its embodiment of light-emitting diode base structure, structure, characteristic and the effect thereof of the be lifted out optical efficiency that proposes according to the present invention, specify as after.
Relevant aforementioned and other technology contents, characteristics and effect of the present invention can be known to appear in the following detailed description that cooperates with reference to graphic preferred embodiment.Through the explanation of embodiment, when can being to reach technological means that predetermined purpose takes and effect to get one more deeply and concrete understanding to the present invention, yet the appended graphic usefulness that only provides reference and explanation be not to be used for the present invention is limited.
Seeing also shown in Figure 3ly, is a kind of profile that is lifted out light-emitting diode base structure 40 first embodiment of optical efficiency of the present invention.Present embodiment is a kind of light-emitting diode base structure 40 that is lifted out optical efficiency, and it is a body 41, and body 41 has a supporting part 42, and forms and to be provided with a first surface 421, a second surface 422 and one the 3rd surface 423.
This first surface 421 is in order to carry LED crystal particle 20;
This second surface 422 is to join with first surface 421, and second surface 422 is an all band light reflection surface, can all reflect in order to the light that LED crystal particle 20 is sent, to promote the light extraction efficiency of light-emitting diode base structure 40.As shown in Figure 3, second surface 422 can be perpendicular to first surface 421.Or, as shown in Figure 5, second surface 422 also can for an inclined-plane and and 421 of first surfaces be formed with an angle.
The 3rd surface 423 is the outer surface of body 41, and it is to join with second surface 422.
The material of body 41 can be all band light reflection ceramic material, so make body 41 by all band light reflection ceramic material, can make second surface 422 be all band light reflection surface.All band light reflection ceramic material is a kind of ceramic material of white, can all reflect in order to the light with visible light wave range and invisible light wave band, makes and the side direction light 21 that LED crystal particle 20 sends is reflected by all band light reflection surface.The light-emitting diode base structure 40 because the side direction light 21 that LED crystal particle 20 sends can be reflected out is so can promote the light extraction efficiency of light-emitting diode base structure 40.
Seeing also shown in Figure 4ly, is a kind of profile that is lifted out light-emitting diode base structure 40 second embodiment of optical efficiency of the present invention.The present invention also can combine to be provided with an all band reflection layer 50 or all band light reflection ceramic layer (not shown) on second surface 422, in order to form all band light reflection surface.All band reflection layer 50 can be incorporated into second surface 422 by the mode of coating, and all band light reflection ceramic layer then can utilize the ceramic multilayer stack properties that the xenogenesis ceramic material is incorporated into second surface 422.
Be incident to for example optical lens of optical element 30 in order to reduce light ... when waiting; Because of the stray light that side direction light 21 is not produced by complete loss, an all band light absorbing zone 60 or an all band light absorption ceramic layer (not shown) can further be set in the 3rd surface 423.Likewise, all band light absorbing zone 60 can be incorporated into the 3rd surface 423 by the mode of coating, and all band light absorption ceramic layer then can utilize the ceramic multilayer stack properties that the xenogenesis ceramic material is incorporated into the 3rd surface 423.
The material of all band light absorbing zone 60 can be the material of a black, and the material of all band light absorption ceramic layer then can be the ceramic material of a black.Because the material of black has the characteristic of the black matrix of black body radiation; Can absorb most all band light; So all band light absorbing zone 60 or all band light absorption ceramic layer can reduce the generation of stray light by this in order to absorb the light that is reflexed to the 3rd surface 423 by optical element 30.
In addition, the setting by all band light absorbing zone 60 or all band light absorption ceramic layer can absorb the light that comprises visible light wave range and invisible light wave band, so but the also ultraviolet light of absorption portion, in order to reduce the injury of ultraviolet light to human eye.
Seeing also shown in Figure 5ly, is a kind of profile that is lifted out light-emitting diode base structure 40 the 3rd embodiment of optical efficiency of the present invention.The structure of body 41 of the present invention can be the multiple-level stack structure of all band light reflection pottery, but and can second surface 422 be piled up by the characteristic of pottery multiple-level stack and become a coarse inclined-plane.That is to say that second surface 422 can reflect ceramic plane by an all band light, and is coarse inclined-plane.By this, can be so that the side direction light 21 that LED crystal particle 20 sends be when being incident to second surface 422, by coarse all band light reflection ceramic plane reflection, and then promote the light extraction efficiency of light-emitting diode base structure 40.
Better is; Can second surface 422 be stacked as coarse inclined-plane by the ceramic multilayer stacked structure; Also can on the 3rd surface 423 all band light absorbing zone 60 or all band light absorption ceramic layer (not shown) be set simultaneously, in order to be absorbed into the light that is incident upon the 3rd surface 423.By this; The side direction light 21 that not only can utilize all band light reflection ceramic plane reflection LED crystal particle 20 to send; In order to promote the light extraction efficiency of light emitting diode seat body; All band light absorbing zone 60 or all band light absorption ceramic layer that is arranged at the 3rd surface 423 also capable of using is absorbed into the light that is incident upon the 3rd surface 423, in order to reduce and to reduce the generation of stray light.
Seeing also shown in Figure 6ly, is a kind of profile that is lifted out light-emitting diode base structure 40 the 4th embodiment of optical efficiency of the present invention.In order to improve the heat-conducting effect of light-emitting diode base structure 40; But the first surface 421 of body 41 also can be by the characteristic of pottery multiple-level stack sintering; Pile up by an insulating heat-conductive base material 70 and to form, or can pile up by the insulating heat-conductive base material of an aluminium nitride base material, a silicon carbide base material, borazon base material or other similar materials and form.By this, the heat energy that is produced when making LED crystal particle 20 conductings can promptly conduct away from LED crystal particle 20 by insulating heat-conductive base material 70.Therefore, can avoid heat history between LED crystal particle 20 and first surface 421, and then luminous efficiency and the useful life that can improve LED crystal particle 20.
Seeing also shown in Figure 7ly, is a kind of profile that is lifted out light-emitting diode base structure 40 the 5th embodiment of optical efficiency of the present invention.Better is that in order further to improve the capacity of heat transmission of light-emitting diode base structure 40 again, first surface 421 can be piled up by an insulating heat-conductive base material 70 and form, and each layer insulating heat-conductive base material 70 can have a plurality of heating columns 71 again.Heating column 71 can conduct heat away from LED crystal particle 20 by LED crystal particle 20 bottom surfaces apace, and insulating heat-conductive base material 70 also can more can be accelerated the heat-transfer rate of light-emitting diode base structure 40 in order to heat conduction.
See also Fig. 6 and shown in Figure 7; Light-emitting diode base structure 40 not only can or have insulating heat-conductive base material 70 accumulations of heating column 71 and form first surface 421 by insulating heat-conductive base material 70, but also can second surface 422 be stacked into coarse inclined-plane by the characteristic of insulating heat-conductive base material 70 multiple-level stacks.
By this, the side direction light 21 that can make LED crystal particle 20 send can be reflected by rough surface, to promote the light extraction efficiency of light-emitting diode base structure 40.Better is that the present invention also can be provided with all band light absorbing zone 60 or all band light absorption ceramic layer (not shown) on the 3rd surface 423 of body 41, in order to be absorbed into the light that is incident upon the 3rd surface 423, can reduce and reduce the generation of stray light.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction; Though the present invention discloses as above with preferred embodiment; Yet be not in order to limiting the present invention, anyly be familiar with the professional and technical personnel, in not breaking away from technical scheme scope of the present invention; When the technology contents of above-mentioned announcement capable of using is made a little change or is modified to the equivalent embodiment of equivalent variations; In every case be not break away from technical scheme content of the present invention, to any simple modification, equivalent variations and modification that above embodiment did, all still belong in the scope of technical scheme of the present invention according to technical spirit of the present invention.
Claims (7)
1. light-emitting diode base structure that can be lifted out optical efficiency; It is characterized in that it is a body, have a supporting part, and be formed with a first surface, a second surface and one the 3rd surface; This first surface is in order to carry LED crystal particle; This second surface and this first surface join, and the 3rd surface joins with this second surface, and wherein this second surface is to be an all band light reflection surface; This main body structure is the multiple-level stack structure of all band light reflection pottery; And this second surface is a coarse inclined-plane, and wherein the 3rd surface is that the outer surface and the 3rd surface of this body is provided with an all band light absorbing zone, to be absorbed into light that is incident upon the 3rd surface and the generation that reduces stray light.
2. the light-emitting diode base structure that is lifted out optical efficiency according to claim 1 is characterized in that wherein said second surface forms this all band light reflection surface by an all band reflection layer.
3. the light-emitting diode base structure that is lifted out optical efficiency according to claim 2 is characterized in that wherein said all band reflection layer is an all band light reflection ceramic layer.
4. the light-emitting diode base structure that is lifted out optical efficiency according to claim 1 is characterized in that wherein said all band light absorbing zone is an all band light absorption ceramic layer.
5. according to the described light-emitting diode base structure that is lifted out optical efficiency of arbitrary claim in the claim 1 to 4, it is characterized in that wherein said first surface is to be piled up by an insulating heat-conductive base material to form.
6. according to the described light-emitting diode base structure that is lifted out optical efficiency of arbitrary claim in the claim 1 to 4, it is characterized in that wherein said first surface is to be piled up by an aluminium nitride base material, a silicon carbide base material or borazon base material to form.
7. according to the described light-emitting diode base structure that is lifted out optical efficiency of arbitrary claim in the claim 1 to 4; It is characterized in that wherein said first surface is to be piled up by an insulating heat-conductive base material to form, and be to have a plurality of heating columns in this insulating heat-conductive base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100093157A CN101515612B (en) | 2008-02-18 | 2008-02-18 | Holder structure of LED for improving lighting efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100093157A CN101515612B (en) | 2008-02-18 | 2008-02-18 | Holder structure of LED for improving lighting efficiency |
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| Publication Number | Publication Date |
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| CN101515612A CN101515612A (en) | 2009-08-26 |
| CN101515612B true CN101515612B (en) | 2012-02-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2008100093157A Expired - Fee Related CN101515612B (en) | 2008-02-18 | 2008-02-18 | Holder structure of LED for improving lighting efficiency |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105892149A (en) * | 2016-06-07 | 2016-08-24 | 京东方科技集团股份有限公司 | Light-emitting assembly, backlight module and display device |
| CN108957274B (en) * | 2018-05-30 | 2020-09-29 | 华灿光电（浙江）有限公司 | Point measurement equipment for light-emitting diode chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1463047A (en) * | 2002-05-30 | 2003-12-24 | 光颉科技股份有限公司 | Encapsulation method for increasing LED brightness |
| CN1588652A (en) * | 2004-08-11 | 2005-03-02 | 深圳市瑞丰光电子有限公司 | Ceramic package light-emitting diode an dits package method |
| CN1832216A (en) * | 2006-02-23 | 2006-09-13 | 苏州共立电子工业有限公司 | Casing of LED and its LEd |
| CN2840330Y (en) * | 2005-05-30 | 2006-11-22 | 亿光电子工业股份有限公司 | Light-emitting diode package structure |
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- 2008-02-18 CN CN2008100093157A patent/CN101515612B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1463047A (en) * | 2002-05-30 | 2003-12-24 | 光颉科技股份有限公司 | Encapsulation method for increasing LED brightness |
| CN1588652A (en) * | 2004-08-11 | 2005-03-02 | 深圳市瑞丰光电子有限公司 | Ceramic package light-emitting diode an dits package method |
| CN2840330Y (en) * | 2005-05-30 | 2006-11-22 | 亿光电子工业股份有限公司 | Light-emitting diode package structure |
| CN1832216A (en) * | 2006-02-23 | 2006-09-13 | 苏州共立电子工业有限公司 | Casing of LED and its LEd |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2006-5091A 2006.01.05 |
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