CN207753011U - White light emitting diode and backlight module - Google Patents
White light emitting diode and backlight module Download PDFInfo
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- CN207753011U CN207753011U CN201721928125.6U CN201721928125U CN207753011U CN 207753011 U CN207753011 U CN 207753011U CN 201721928125 U CN201721928125 U CN 201721928125U CN 207753011 U CN207753011 U CN 207753011U
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- light emitting
- emitting diode
- light
- conversion layer
- white light
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Abstract
The utility model provides a kind of white light emitting diode and backlight module, including an at least LED blue chips or purple light chip, fluorescence conversion layer and optical diaphragm on the surface of the fluorescence conversion layer is arranged；The fluorescence conversion layer includes silica gel, and scattering device has green emitting phosphor, red fluorescence powder in the silica gel.By the way that optical diaphragm is arranged, blue light exciting light only penetrates optical diaphragm in specific angle, other angles are reflected by optical diaphragm, increase path of the blue light in LED fluorescence conversion layers, green emitting phosphor and red fluorescence powder are repeatedly excited, to improve the light extraction of green light and feux rouges, color dot is made to reach the requirement of backlight.
Description
Technical field
The utility model is related to a kind of diode technologies field, more particularly to a kind of white light emitting diode and backlight mould
Group.
Background technology
Wide colour gamut has become the new hot spot of field of backlights, and the requirement of consumer's color domain is also higher and higher.Traditional nitridation
Object rouge and powder is since its half-wave is wide, and it is difficult further to be promoted that NTSC is upper to a certain extent, and NTSC is confined to 90% substantially
Left and right.
In recent years, the non-rare earth phosphor (γ-AlON that Mn ions mix：M, M2AX6:) and SrLiSi3N4 Mn4+：Eu is novel
Fluorescent powder half-wave is wide to be much smaller than tradition LED fluorescent powders, has higher excitation purity, is increasingly becoming research hotspot.γ-AlON：
M collocation M2AX6:Mn4+ or SrLiSi3N4：Eu new phosphors, colour gamut can almost match in excellence or beauty with quantum dot and (be more than 100%).
But γ-AlON：M fluorescent powders it is extremely inefficient, it is (blue that normal backlight product demand color dot is not achieved in color dot after existing LED encapsulation
The green light and feux rouges ratio that light inspires are few), it cannot achieve the application of backlight.
Utility model content
The utility model aim is for overcome the deficiencies in the prior art, to provide a kind of two pole of white-light emitting, can be very big
The green light and feux rouges being stimulated by blue light are improved, to solve γ-AlON：M collocation M2AX6:) and SrLiSi3N4 Mn4+：Eu is novel
The defect that fluorescent powder cannot be applied in backlight.
Another utility model mesh of the utility model is to provide a kind of backlight module.
In order to achieve the above object, the utility model uses following technical scheme：
A kind of white light emitting diode, including an at least LED blue chips or purple light chip, fluorescence conversion layer and setting exist
The optical diaphragm on the surface of the fluorescence conversion layer；The fluorescence conversion layer includes silica gel, the scattering device in the silica gel
There are green emitting phosphor, red fluorescence powder.
Preferably, the half-wave of the green emitting phosphor is wide to be less than 55nm, red fluorescence powder half-wave is wide to be less than 50nm.
Preferably, the blue chip wavelength is 440-465nm, the purple light chip wavelength is 400-430nm.
Preferably, the fluorescence conversion layer includes the first fluorescence conversion layer being from bottom to top arranged and the conversion of the second fluorescence
Layer, optical diaphragm is provided between the first conversion fluorescence layer and the second fluorescence coating.
Preferably, the optical diaphragm penetrates the blue violet light of 400-500nm, other angles in specific angular range
Blue violet light is reflected back fluorescence conversion layer.
Preferably, the diaphragm has at least two to penetrate blue light and cross one another angle.
Preferably, the diaphragm full angle penetrates 500-700nm light.
Preferably, the optical diaphragm is made of photonic crystal；The diaphragm penetrates 400- in 25 ° of -75 ° of ranges
Blue violet light is reflected back fluorescence conversion layer by the blue violet light of 500nm, other angles.
A kind of backlight module, which is characterized in that including the white-light emitting two described in claim 1 to 8 any claim
Pole pipe.
Preferably, further including light guide module；The light guide module include light guide plate, the brightness enhancement film on light guide plate,
Diffusion barrier and the reflecting piece under light guide plate；The white light emitting diode is arranged on a pcb board and is located at the leaded light
The side of module；
Or further include lens, backboard, diffuser plate, diffusion sheet, prismatic lens and pcb board；The white light emitting diode setting
On the pcb board, the lens are arranged on the white light emitting diode；In the periphery setting backboard of the pcb board；
Diffuser plate, prism plate and diffusion sheet is from bottom to top arranged in the top of backboard.
Compared with prior art, the utility model has the advantages that：
By the way that optical diaphragm is arranged, blue light exciting light only penetrates optical diaphragm in specific angle, and other angles are by optics
Diaphragm reflects, and increases path of the blue light in LED fluorescence conversion layers, and green emitting phosphor and red fluorescence powder are repeatedly excited, from
And the light extraction of green light and feux rouges is improved, so that color dot is reached the requirement of backlight.
Description of the drawings
A kind of structural schematic diagram of Fig. 1 the utility model white light emitting diodes；
Fig. 2 is the high colour gamut module schematic diagram of straight-down negative of the utility model embodiment 3；
Fig. 3 is the high colour gamut module schematic diagram of side entering type of the utility model embodiment 3.
In figure：
101-chips；102-fluorescence conversion stratification；103-optical diaphragms；
201-lens；202-pcb boards；203-backboards；204-diffuser plates；205-prismatic lens；206-diffusion sheets；
301-pcb boards；302-reflecting pieces；303-light guide plates；304-brightness enhancement films；305-diffusion barriers.
Specific implementation mode
In conjunction with attached drawing, the utility model is described in further detail with specific embodiment.
A kind of white light emitting diode, including an at least LED blue chips or purple light chip, fluorescence conversion layer and setting exist
The optical diaphragm on the surface of the fluorescence conversion layer.The fluorescence conversion layer includes silica gel, the scattering device in the silica gel
There are green emitting phosphor, red fluorescence powder.
The half-wave of the green emitting phosphor is wide to be less than 55nm, and red fluorescence powder half-wave is wide to be less than 50nm.The green fluorescence
Powder is by γ-AlON：One or more compositions in M structure, M Mn, Mg or the two are mixed altogether.The red fluorescence powder by
M2AX6:Mn4+ or SrLiSi3N4：One or more compositions of Eu structures, wherein M are Li, Na, K, Rb, Cs；A be Ti, Si,
Ge、Zr；X is F, Cl, Br；The blue chip wavelength is 440-465nm.
Optical diaphragm is photonic crystal diaphragm, and in specific angle, (angular range of photonic crystal diaphragm is optical diaphragm
25 ° -75 °) range penetrates the blue violet light of 400-500nm, and blue violet light is reflected back fluorescence conversion layer, full angle by other angles
Through 500-700nm light.The optical diaphragm has at least two transmission blue lights and (white light is by indigo plant to cross one another angle
Light is mixed plus blue light activated green light+feux rouges or single yellow light, if only there are one angle go out blue light will will produce it is photochromic
Non-uniform situation it requires intersection).
The transmitting light of LED blue chips is reflected the excitation for increasing the fluorescent powder in fluorescence conversion layer by optical diaphragm
Path greatly improves the light extraction efficiency of fluorescence conversion layer.The blue light and green light, feux rouges for intersecting light extraction are mixed into white light, solve
γ-AlON：M is because of efficiency low the problem of cannot applying in the backlight.
Embodiment 1
Present embodiments provide a kind of white light emitting diode, by the LED blue chips of a 450nm, fluorescence conversion layer and
Optical diaphragm on the surface of the fluorescence conversion layer forms.Fluorescence conversion layer is by γ-AlON:Mn2+ and K2SiF6:Mn4+ with
Silica gel forms.γ-AlON:The half-wave width of Mn2+ is 35nm, K2SiF6:The wide 4nm of half-wave of Mn4+.
Optical diaphragm is made of photonic crystal, penetrates the blue violet light of 400-500nm in 25 ° of -55 ° of ranges, other angles will
Blue violet light is reflected back fluorescence conversion layer, and full angle penetrates the light of 500-700nm.The optical diaphragm includes at least two can be with
The angle of intersection penetrates blue light.
The NTSC of the white light emitting diode of the present embodiment is reached as high as (0.30,0.30) up to 104%, LED color dots.
Embodiment 2
Present embodiments provide a kind of white light emitting diode, and embodiment 1 is essentially identical, no longer for something in common
It repeats, difference is illustrated below：
Fluorescence conversion layer is by γ-AlON:Mg2+ and K2GeF6:Mn4+ is formed with silica gel.γ-AlON:The half-wave of Mg2+ is wide
For 40nm, K2GeF6:The wide 4nm of half-wave of Mn4+.
Optical diaphragm is made of photonic crystal, penetrates the blue violet light of 400-500nm in 45 ° of -75 ° of ranges, other angles will
Blue violet light is reflected back fluorescence conversion layer, and full angle penetrates the light of 500-700nm.The optical diaphragm includes at least two can be with
The angle of intersection penetrates blue light.
The NTSC of the white light emitting diode of the present embodiment is reached as high as (0.30,0.30) up to 100%, LED color dots.
Embodiment 3
Present embodiments provide a kind of white light emitting diode, and embodiment 1 is essentially identical, no longer for something in common
It repeats, difference is illustrated below：
Fluorescence conversion layer is by γ-AlON:Mg2+/Mn2+ and SrLiSi3N4：Eu is formed with silica gel.γ-AlON:Mg2+'s
Half-wave width is 45nm, SrLiSi3N4：The wide 45nm of half-wave of Eu.
Optical diaphragm is made of photonic crystal, penetrates the blue violet light of 400-500nm in 30 ° of -60 ° of ranges, other angles will
Blue violet light is reflected back fluorescence conversion layer, and full angle penetrates the light of 500-700nm.The optical diaphragm includes at least two can be with
The angle of intersection penetrates blue light.
The NTSC of the white light emitting diode of the present embodiment is reached as high as (0.33,0.33) up to 100%, LED color dots.
Embodiment 4
Present embodiments provide a kind of white light emitting diode, and 1 to 3 any embodiment of embodiment is essentially identical, it is right
It repeats no more in something in common, difference is illustrated below：
Fluorescence conversion layer includes the first fluorescence conversion layer and the second fluorescence conversion layer being from bottom to top arranged, the first conversion silver
It is provided with optical diaphragm between photosphere and the second fluorescence coating.Keep light-emitting phosphor effect more preferable.
Backlight module described in the utility model, including down straight aphototropism mode set and side entrance back module.
Embodiment 5
It is a kind of LED down straight aphototropism mode sets described in the present embodiment, which uses existing LED straight-down negatives
Back light module unit structure.The LED light emitting device that LED down straight aphototropism mode sets use is white luminous two pole described in the utility model
Pipe.
As shown in Fig. 2, LED down straight aphototropism mode sets include pcb board 202, optical lens 201, diffuser plate 204, prismatic lens
205, diffusion sheet 206, backboard 203.LED light emitting device 100 is set on pcb board 202, and optical lens 201 is set to LED light emitter
100 top of part, the pcb board 202 equipped with LED light emitting device 100 are fixedly arranged on 203 bottom of backboard, and backboard 203 is located at the outer of pcb board
It encloses, diffuser plate 204 is set to 203 top of backboard, and prismatic lens 205 are set to 204 upper surface of diffuser plate, and diffusion sheet 206 is set to prismatic lens
205 upper surfaces.
Embodiment 6
It is a kind of LED side entrance back modules 300 described in the present embodiment, which uses the existing sides LED
Enter formula back light module unit structure.The LED light emitting device that side entrance back module uses is light emitting diode described in the utility model.
As shown in figure 3, LED side entrance back modules include light guide plate 303, reflecting piece 302, brightness enhancement film 304, diffusion barrier
305.LED light emitting device 100 and pcb board 301 connect and are set to 303 side of light guide plate, and reflecting piece 302 and brightness enhancement film 304 are distinguished
Set on the lower surface and upper surface of light guide plate 303, diffusion barrier 305 is set to 304 upper surface of brightness enhancement film.
The utility model is not limited to the above embodiment, if various changes or modifications to the utility model do not take off
Spirit and scope from the utility model, if these modification and variations belong to the claims and equivalents of the utility model
Within the scope of, then the utility model is also intended to comprising these changes and changes.
Claims (10)
1. a kind of white light emitting diode, which is characterized in that including an at least LED blue chips or purple light chip, fluorescence conversion
Layer and optical diaphragm on the surface of the fluorescence conversion layer is set；The fluorescence conversion layer includes silica gel, in the silica gel
Interior scattering device has green emitting phosphor, red fluorescence powder.
2. white light emitting diode according to claim 1, which is characterized in that the half-wave of the green emitting phosphor is wide to be less than
55nm, red fluorescence powder half-wave is wide to be less than 50nm.
3. white light emitting diode according to claim 1, which is characterized in that the blue chip wavelength is 440-465nm,
The purple light chip wavelength is 400-430nm.
4. white light emitting diode according to claim 1, which is characterized in that the fluorescence conversion layer includes from bottom to top setting
The the first fluorescence conversion layer and the second fluorescence conversion layer set, optical film is provided between the first conversion fluorescence layer and the second fluorescence coating
Piece.
5. white light emitting diode according to claim 1, which is characterized in that the optical diaphragm is in specific angle model
The blue violet light through 400-500nm is enclosed, blue violet light is reflected back fluorescence conversion layer by other angles.
6. white light emitting diode according to claim 2, which is characterized in that the diaphragm has at least two to penetrate indigo plant
Light and cross one another angle.
7. white light emitting diode according to claim 2, which is characterized in that the diaphragm full angle penetrates 500-
700nm light.
8. white light emitting diode according to claim 2, which is characterized in that the optical diaphragm is by photonic crystal group
At；The diaphragm penetrates the blue violet light of 400-500nm in 25 ° of -75 ° of ranges, and blue violet light is reflected back fluorescence and turned by other angles
Change layer.
9. a kind of backlight module, which is characterized in that including two pole of white-light emitting described in claim 1 to 8 any claim
Pipe.
10. backlight module according to claim 9, which is characterized in that
It further include light guide module；The light guide module includes light guide plate, the brightness enhancement film on light guide plate, diffusion barrier and positioned at leading
Reflecting piece under tabula rasa；The white light emitting diode is arranged on a pcb board and positioned at the side of the light guide module；
Or further include lens, backboard, diffuser plate, diffusion sheet, prismatic lens and pcb board；The white light emitting diode is arranged in institute
It states on pcb board, the lens are arranged on the white light emitting diode；In the periphery setting backboard of the pcb board；In backboard
Top diffuser plate, prism plate and diffusion sheet are from bottom to top set.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721928125.6U CN207753011U (en) | 2017-12-29 | 2017-12-29 | White light emitting diode and backlight module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721928125.6U CN207753011U (en) | 2017-12-29 | 2017-12-29 | White light emitting diode and backlight module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207753011U true CN207753011U (en) | 2018-08-21 |
Family
ID=63152356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721928125.6U Active CN207753011U (en) | 2017-12-29 | 2017-12-29 | White light emitting diode and backlight module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207753011U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108257948A (en) * | 2017-12-29 | 2018-07-06 | 广东晶科电子股份有限公司 | White light emitting diode and backlight module |
| CN110426892A (en) * | 2019-07-05 | 2019-11-08 | 青岛海信电器股份有限公司 | A kind of backlight module and display device |
-
2017
- 2017-12-29 CN CN201721928125.6U patent/CN207753011U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108257948A (en) * | 2017-12-29 | 2018-07-06 | 广东晶科电子股份有限公司 | White light emitting diode and backlight module |
| CN108257948B (en) * | 2017-12-29 | 2024-03-26 | 广东晶科电子股份有限公司 | White light LED and backlight module |
| CN110426892A (en) * | 2019-07-05 | 2019-11-08 | 青岛海信电器股份有限公司 | A kind of backlight module and display device |
| CN110426892B (en) * | 2019-07-05 | 2022-03-04 | 海信视像科技股份有限公司 | Backlight module and display device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180821 Address after: 511458 No. 33, South Ring Road, Nansha District, Guangzhou, Guangdong. Co-patentee after: Shenzhen Skyworth-RGB Electronics Co., Ltd. Patentee after: GUANGDONG APT ELECTRONICS LTD. Address before: 511458 No. 33, South Ring Road, Nansha District, Guangzhou, Guangdong. Patentee before: GUANGDONG APT ELECTRONICS LTD. |
|
| TR01 | Transfer of patent right |