CN209638931U - Wide-angle goes out radiant and area source mould group - Google Patents
Wide-angle goes out radiant and area source mould group Download PDFInfo
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- CN209638931U CN209638931U CN201920020307.6U CN201920020307U CN209638931U CN 209638931 U CN209638931 U CN 209638931U CN 201920020307 U CN201920020307 U CN 201920020307U CN 209638931 U CN209638931 U CN 209638931U
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Abstract
The utility model relates to a kind of wide-angles to go out radiant, area source mould group and the preparation method of radiant out, it includes LED chip that wide-angle, which goes out radiant, LED chip is inverted structure, LED chip includes the P-GaN layer, luminescent layer, N-GaN layers and substrate set gradually from bottom to top, and the reflecting layer under the setting of the bottom surface of LED chip, the top surface of LED chip and side are provided with blue light and answer excitation layer, upper reflecting layer is arranged in the top surface that blue light answers excitation layer, four sides that blue light answers excitation layer are full output optical zone, and upper reflecting layer top surface is entirely or partially echo area.Utility model has the advantages that in the utility model, reflecting layer is set up directly on to the top and bottom of flip LED chips, the light that LED chip issues is reflected by upper reflecting layer and lower reflecting layer, so that light is projected from four sides of LED chip, realizes that wide-angle shines；Further, since it is individual monomer that the wide-angle of the utility model, which goes out radiant, and non-integral makes reflecting layer on substrate, therefore, can paste for different substrates.
Description
Technical field
The utility model relates to a kind of wide-angles to go out radiant, further relate to a kind of face light for going out radiant using the wide-angle
Source mould group.
Background technique
The forward LED of conventional belt mirror structure, as shown in Figure 1, including the reflecting layer 11 set gradually from bottom to top, lining
Bottom 12, N-GaN layer 13 and P-GaN layer 14；The flip LED of conventional belt mirror structure, as shown in Fig. 2, include from bottom to top according to
Reflecting layer 21, P-GaN layer 22, luminescent layer 23, N-GaN layer 24 and the substrate 25 of secondary setting；Traditional formal dress and flip LED chips
If being that 5 faces go out light, and reflecting layer is positioned close to substrate side, the i.e. bottom surface of LED chip using reflecting layer
On.
In the light-source structure formed after the LED chip encapsulation with mirror structure at present, light-emitting angle only has 120 ° of left sides
The right side, in the application of the area source of backlight display and illuminating industry, using being subject to certain restrictions.
Such as: going out optical mode group mainly in traditional straight-down negative face has 3 kinds of modes:
(1) using the array of source of conventional LED chips composition, diffusion is set in the top certain distance of LED light source array
Point light source is become area source using diffuser plate by plate；
(2) using the array of source of conventional LED chips composition, it is close to mounted lens in each LED chip, makes LED lamp bead
For the light of sending after lens, light carries out light intensity superposition to a certain extent by the air layer conduction between lens and diffuser plate
It is irradiated on diffuser plate again afterwards, and then point light source is become into area source；
(3) conventional LED chips array of source is used, silica gel is directly coated on the surface of LED light source array and adds fluorescent powder shape
At light-conductive media layer, so that point light source changes to area source.
Aforesaid way has some disadvantages or limitation:
(1) for first way: as shown in Figure 3,4, the light-emitting angle of conventional LED light source is up to 120 ° or so,
Biggish distance must be spaced between LED light source 91 and diffuser plate 92 can be only achieved more uniform light mixing effect, and entire surface goes out
Optical mode group is usually very thick, generally can be only applied to illuminating industry, such as panel light, using limiting to very much.
(2) for the second way: being superimposed the light-emitting angle energy after lens 3 as shown in Figure 5,6, on conventional LED light source 91
Enough reach 135 °, although increasing light emitting angle, and top surface goes out light and is greatly reduced, can reach in relatively much shorter distance
More uniform light mixing effect, it is also necessary between diffuser plate 92 and secondary optical lens 93 due to needing using secondary optical lens
It is spaced a distance, is reduced although comparing first way thickness, face goes out optical mode group and is unable to reach ultra-thin effect.
(3) for the third mode, as shown in figure 8, it is coated on the array of source surface that several LED chip 91' are constituted
Phosphor powder layer 94 has been slightly increased the lateral of white light and has propagated and light mixing；But by optical theory, we are it can be found that work as blue light
When transmitting in the waveguide containing fluorescent powder, the blue light strength as exciting light can be because of the absorption and irregular scattering of fluorescent powder
And it quickly reduces.As shown in figure 9, when light intensity is transmitted in the waveguide containing fluorescent powder, intensity is in numerical value by taking point light source as an example
Upper cube being inversely proportional with distance；As shown in Figure 10, linear light source, when light intensity is transmitted in the waveguide containing fluorescent powder, intensity
Numerically square it is inversely proportional with distance；As shown in figure 11, area source, light intensity are transmitted in the waveguide containing fluorescent powder
When, intensity is numerically inversely proportional with distance.
Using the area source of first and second kind of mode, due to the limitation of LED chip light extraction angle, not only easily forms dark space, mixes
Optical uniformity is poor, and entire straight-down negative face goes out that optical mode group is also thicker, and the thickness of optical mode group is gone out to reduce entire surface, can only pass through contracting
Small adjacent LED chip chamber away from realizing (referring to Fig. 7), but required LED chip quantity at square increase, cost substantially mentions
It is high.
Using the area source of the third mode, although solving the problems, such as mould group thickness,
One, the light-emitting angle limitation of LED chip, so that the light that LED chip issues is unfavorable for the cross in phosphor powder layer
To propagation, lateral communication effect is limited；
Two, since the white light that blue light excitated fluorescent powder is mixed to get is decayed seriously in light-conductive media communication process, swash
Fluoresce powder blue light decaying, therefore, blue light strength reduce, along wave guide direction lateral transmission intensity reduce；Chip light-emitting is bright
Degree is uneven, and light mixing effect is poor, cause whole face brightness in area source also less uniformly.Therefore, arrangements of chips is whole than comparatively dense
Body limits the LED chip arrangement mode of bigger spacing.
In summary, it would be desirable to research and develop it is a kind of increase light-emitting angle light source chip, and can be improved light mixing effect,
It avoids brightness disproportionation and the area source mould group of integral thickness can be reduced.
Utility model content
The technical problem to be solved by the present invention is to provide a kind of light out that increases with regard to the wide-angle of angle to go out radiant, also
Providing a kind of can be improved light mixing effect, avoids brightness disproportionation and can reduce the area source mould group of integral thickness.
In order to solve the above technical problems, the technical solution of the utility model are as follows: a kind of wide-angle goes out radiant, and feature exists
In: including LED chip, the LED chip is inverted structure, and LED chip includes the P-GaN layer set gradually from bottom to top, hair
Photosphere, N-GaN layers and substrate, and the reflecting layer under the setting of the bottom surface of LED chip, are provided in the top surface of LED chip and side
Blue light answers excitation layer, and upper reflecting layer is arranged in the top surface that blue light answers excitation layer, and four sides that the blue light answers excitation layer are to go out entirely
Light area, upper reflecting layer top surface are entirely or partially echo area.
Further, reflecting layer in the top surface setting of the LED chip, and the middle reflecting layer is that part light out part point is anti-
Penetrate structure.
Further, the blue light answers the top surface of excitation layer and side is provided with one layer of first medium hyaline layer, it is described on
Reflecting layer is located at the upper surface of first medium hyaline layer.
The area source mould group that a kind of wide-angle goes out radiant is also provided, innovative point is: the area source mould group includes
Substrate, high refractive index transparent ducting layer and wide-angle go out radiant, and several wide-angles are provided on the substrate and go out radiant, In
Setting covers the high refractive index transparent ducting layer that all wide-angles go out radiant, the high refractive index transparent ducting layer on substrate
Height be equal to or higher than wide-angle and go out the apical side height of radiant；
The high refractive index transparent ducting layer meets the following conditions simultaneously:
(1) the high refractive index transparent ducting layer is Single Medium and equally distributed dielectric layer；
(2) surface in high refractive index transparent ducting layer far from substrate is limited as upper waveguide interface, is located at upper ripple
The side medium led in interface two sides far from substrate is outer medium layer, and the refractive index of high refractive index transparent ducting layer is denoted as n2,
The refractive index of outer medium layer is denoted as n3, n2> n3；
(3) another surface in high refractive index transparent ducting layer close to substrate is limited as lower waveguide interface, in lower wave
It leads and is provided with waveguide reflecting layer between interface and substrate.
Further, it is additionally provided with Diffusion barrier layer above the upper waveguide interface of the high refractive index transparent ducting layer, and
There are air layer or air-gaps between Diffusion barrier layer and high refractive index transparent ducting layer, and the air layer or air-gap are as western medium
Matter layer.
Further, between the Diffusion barrier layer and high refractive index transparent ducting layer there are when air-gap, the diffusion barrier
The lower surface of layer has rough micro-structure, and the micro-structure accounts for the 10~100% of the Diffusion barrier layer gross area；Institute
It states Diffusion barrier layer lower surface micro-structure and is close to waveguide interface formation air-gap on high refractive index transparent ducting layer.
Further, between the substrate and high refractive index transparent ducting layer or high refractive index transparent ducting layer and diffusion
Local scattering micro-structural is added between film layer.
Further, the substrate is multiple spaced discontinuous strip substrates, and the wide-angle goes out light light
Source is correspondingly arranged on strip substrate.
Utility model has the advantages that
(1) it in order to realize that the wide-angle of chip goes out light, theoretically only needs to be further added by one layer of reflection in LED chip upper surface
The upward light in part, can be reflexed to the side of chip by layer by the reflecting layer, and still, blue-ray LED as shown in figure 12 swashs
The fluorescence emission spectra of hair, absorptivity of the light of the long-wave bands such as green light, yellow light, feux rouges in LED chip is lower, and LED chip
The blue light wavelength itself issued is shorter, absorptivity highest, and absorption is most serious, therefore, according to this kind of mode, blue light
Meeting multiple reflections, absorption between upper and lower reflecting layer, can smoothly be greatly reduced from the light that four sides is projected.
In the utility model, reflecting layer is set up directly on to the top and bottom of flip LED chips, when LED chip issues
Light when constantly being reflected by upper reflecting layer and lower reflecting layer, since blue light answers the presence of excitation layer, for conventional blue laser LED core
Piece can will reflect back into the blue light come, answer excitation layer (i.e. phosphor powder layer) using blue light, further excite, further mix
Conjunction obtains white light；In the fluorescence emission spectra of blue-ray LED excitation, the light of the long-wave bands such as green light, yellow light, feux rouges is in LED chip
Absorptivity it is lower, and the blue light wavelength that LED chip itself issues is shorter, absorptivity highest, and absorption is most serious；And this
In utility model, creative above reflecting layer and the blue light of being arranged simultaneously above LED chip answers excitation layer, using by upper reflecting layer
The blue light of reflection is answered excitation layer by blue light and is excited again, and white light is further mixed to get, and white light is absorbed relative to blue light
Part just it is few mostly；The decaying of light is avoided on the basis of realizing that wide-angle goes out light.The wide-angle of the utility model goes out light light
Source is individual monomer, and non-integral makes reflecting layer on substrate, therefore, can easily paste for different substrates.
In preparation process, part output optical zone kind, we can control the thickness and transparency in translucent reflecting layer,
Come realize control reflected light number, chip sides are gone out with the regulation of light to realize；In addition, being set in translucent reflecting layer
It is equipped with reflection grain filler, by controlling the thickness in translucent reflecting layer, helps to improve the amount of light of edge and side.
(2) setting of first or second medium hyaline layer increases the light-emitting angle of LED chip, is conducive to direct the light to
High refractive index transparent ducting layer increases its light-emitting angle, further hoisting light mixing effect.
(3) in the area source modular structure of the utility model, using the micro-structure of Diffusion barrier layer lower surface, there are gaps, i.e.,
The air layer of most of area in Diffusion barrier layer area is accounted for as low-index layer, and then wide-angle goes out the white light of radiant sending
Waveguide is formed in the high refractive index transparent ducting layer, so that point light source changes to area source, the lateral of white light is increased and propagates.
(4) in the utility model, in order to improve the situation of light intensity unevenness, hoisting light mixing effect can be according to circumstances in substrate
Upper surface or the lower surface of high refractive index transparent ducting layer be equipped with local scattering micro-structural region, and or in high refractive index transparent
The upper surface of ducting layer is equipped with local scattering micro-structural region.The part scattering micro-structural region is generally arranged in array distribution
The dark space of LED light source.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the forward LED of conventional belt mirror structure.
Fig. 2 is the structural schematic diagram of traditional flip LED with mirror structure.
Fig. 3 is the light-emitting angle test chart of Conventional LED light sources.
Fig. 4 is the light intensity principle of stacking figure that traditional straight-down negative face goes out first way in optical mode group.
Fig. 5 is Conventional LED light sources plus the light-emitting angle test chart after lens.
Fig. 6 is the light intensity principle of stacking figure that traditional straight-down negative face goes out in optical mode group to add using LED light source lens mode.
Fig. 7 is another light intensity that traditional straight-down negative face goes out in optical mode group to add using close-packed arrays LED light source lens mode
Principle of stacking figure.
Fig. 8 is the schematic diagram that traditional straight-down negative face goes out in optical mode group to add using LED light source array fluorescent powder mode.
Fig. 9 is containing fluorescent powder waveguide for the loss schematic diagram of the luminous intensity of point light source.
Figure 10 is containing fluorescent powder waveguide for the loss schematic diagram of the luminous intensity of linear light source.
Figure 11 is containing fluorescent powder waveguide for the loss schematic diagram of the luminous intensity of area source.
Figure 12 is the fluorescence emission spectra figure of blue-ray LED excitation.
Figure 13 is that the wide-angle of embodiment 1 goes out the structural schematic diagram of radiant.
Figure 14 is that the wide-angle of the utility model first embodiment goes out the light-emitting angle test chart of radiant.
Figure 15 is that the wide-angle of embodiment 2 goes out the structural schematic diagram of radiant.
Figure 16 is another structural schematic diagram of LED chip in the utility model.
Figure 17~Figure 19 is respectively the structural schematic diagram of 3 area source mould group of embodiment.
Figure 20 is the Local map of Figure 18；
Figure 21~Figure 22 is respectively the structural schematic diagram of 4 area source mould group of embodiment.
Specific embodiment
Embodiment 1
The wide-angle of the present embodiment goes out radiant, as shown in figure 13, including LED chip 1, LED chip 1 is using band reflection
The inverted structure of mirror: LED chip 1 includes P-GaN layer, luminescent layer, N-GaN layers and the substrate set gradually from bottom to top, and
Lower reflecting layer is arranged in the bottom surface of LED chip 1, and the top surface of LED chip 1 and side are provided with blue light and answer excitation layer 2, blue light compounding
Upper reflecting layer 3 is arranged in the top surface for sending out layer 2, and four sides that blue light answers excitation layer 2 are full output optical zone, and upper 3 top surface of reflecting layer is complete
Reflection or part echo area.
When it is implemented, the granular filler for reflecting, reflecting is contained in upper reflecting layer 3.
By taking the wide-angle using the top surface catoptric arrangement of translucent half reflection goes out radiant as an example, as shown in figure 14, the knot
The main energy angular of the direction of main light emission of the LED light source of normal lambert's light type structure is successfully transformed into four for 0 ° from surface by structure
Positive and negative 30 ° of week.Secondly, visible from light distribution is also successfully in homogenization in entire light emitting angle by its luminous intensity
Distribution, even if it goes out light light intensity is still light intensity peak 64% or so under positive and negative 85 ° of polarizers of big angle scope.And in normal lambert's light
If its light-emitting angle is 120 ° in the LED light source of type structure, that is to say, that when it is at positive and negative 60 °, it goes out light light intensity and is only
The half of peak value (referring to Fig. 3).And radiant knot is gone out using the top surface catoptric arrangement wide-angle of translucent half reflection in this patent
Even if light intensity its light intensity in positive and negative 85 ° of polarizers of big angle scope is still the 64% of light intensity peak in structure.
The present embodiment wide-angle goes out radiant, through the following steps that be prepared:
Step S1: choosing qualified LED chip 1, and LED chip 1 has is disposed with lower reflecting layer, P- from bottom to top
GaN layer, luminescent layer, N-GaN layers and substrate；
Step S2: by several 1 equidistant arrangements of LED chip, so that a fillable gap is formed between adjacent LED chip 1, then
It is whole that phosphor powder layer is set in entire 1 surface of LED chip and fillable gap, and then form blue light and answer excitation layer 2, it goes forward side by side
Row baking-curing obtains semi-finished product；
Step S3: the reflecting layer 3 on the semi-finished product top surface formation interface that step S2 is obtained clearly mirror-like；Specifically,
Upper reflecting layer 3 is answer 2 top surface of excitation layer, one layer of metal layer of setting in blue light or answer 2 top surface of excitation layer in blue light and be provided with to be used for
The granular filler of refraction, reflection；
Step S4: there is the semi-finished product baking-curing again in upper reflecting layer to top surface, then cut, sliver, sliver
Chip testing, sorting, rearrangement are carried out afterwards, are obtained wide-angle and are gone out radiant.
The present embodiment wide-angle goes out the LED chip used in radiant, more specific embodiment, as shown in figure 16, LED
The top surface of chip 1 is equipped with middle reflecting layer 8, and middle reflecting layer 8 is that part light out part divides catoptric arrangement；For using structure LED
The wide-angle of chip goes out the preparation method of radiant, and step S1 is further adjusted are as follows: chooses LED wafer, LED wafer tool
Have and be disposed with lower reflecting layer, P-GaN layers, luminescent layer, N-GaN layers and substrate from bottom to top, LED wafer is examined
Whether survey qualified；And the reflecting layer 8 in one layer of setting on the qualified wafer top surface substrate surface of detection, to top surface have in it is anti-
The LED wafer baking-curing for penetrating layer, is then cut, sliver, is disposed with lower reflecting layer, P- from bottom to top
GaN layer, luminescent layer, N-GaN layers, the LED chip of substrate and middle reflecting layer 8 choose the qualified LED core with middle reflecting layer 8
Piece 1；Remaining step is constant.The upper and lower surfaces of LED chip 1 in this way have been respectively provided with middle reflecting layer and lower reflecting layer.
Below by taking certain specification panel light as an example, the wide-angle of the present embodiment goes out the reduced parameter of radiant and conventional lighting sources such as
Following table:
600*600mm panel light application case
Conclusion:
As can be seen from the above table, under the premise of light emitting region area is identical, panel light thickness is identical, in the present embodiment,
Main light emission energy position is offset to side from surface due to going out radiant using wide-angle four sides, meanwhile, light emitting angle
Up to 170 ° or more, compared with the panel light that conventional LED adds diffuser plate to combine, under the premise of guaranteeing identical light mixing effect, have
The spacing for improving adjacent light source of effect, is greatly reduced light source granule number；And add diffuser plate with the conventional LED light source with lens
In conjunction with panel light compare, not only granule number reduces, while also saving the cost of lens.
Embodiment 2
In the present embodiment, as shown in figure 15, it includes LED chip 1 that wide-angle, which goes out radiant, and the bottom surface of LED chip 1 is included
Lower reflecting layer, the top surface and side of LED chip 1 are provided with blue light and answer excitation layer 2, and answer the top surface and side of excitation layer 2 in blue light
Face is provided with one layer of first medium hyaline layer 4, and upper reflecting layer 3 is arranged in the upper surface of first medium hyaline layer 4.
Four sides that blue light answers excitation layer 2 are full output optical zone, and upper 3 top surface of reflecting layer is entirely or partially echo area.
The present embodiment wide-angle goes out radiant, through the following steps that be prepared:
Step S1: choosing qualified LED chip 1, and LED chip 1 has is disposed with lower reflecting layer, P- from bottom to top
GaN layer, luminescent layer, N-GaN layers and substrate；
Step S2: by several 1 equidistant arrangements of LED chip, so that a fillable gap is formed between adjacent LED chip 1, then
It is whole that phosphor powder layer is set in entire 1 surface of LED chip and fillable gap, and then form blue light and answer excitation layer 2, it goes forward side by side
Row baking-curing obtains semi-finished product；Semi-finished product are cut again, sliver, obtains the semi-finished product that there is blue light to answer excitation layer 2, so
The semi-finished product of excitation layer 2 equidistant arrangement again will be answered with blue light afterwards, so that a fillable gap is formed between adjacent semi-finished product,
It is whole again that first medium hyaline layer 4 is set in entire surface of semi-finished and fillable gap, and carry out baking-curing and obtain
The semi-finished product of excitation layer 2 and first medium hyaline layer 4 are answered with blue light；
Step S3: the reflecting layer 3 on the semi-finished product top surface formation interface that step S2 is obtained clearly mirror-like；Specifically,
Upper reflecting layer 3 is answer 2 top surface of excitation layer, one layer of metal layer of setting in blue light or answer 2 top surface of excitation layer in blue light and be provided with to be used for
The granular filler of refraction, reflection；
Step S4: there is the semi-finished product baking-curing again in upper reflecting layer to top surface, then cut, sliver, sliver
Chip testing, sorting, rearrangement are carried out afterwards, are obtained wide-angle and are gone out radiant.
The present embodiment wide-angle goes out the LED chip used in radiant, may be selected using the LED core with middle reflecting layer
Piece, embodiments thereof, as shown in figure 16, the top surface of LED chip 1 are equipped with middle reflecting layer 8, and middle reflecting layer 8 is part light out part
Divide catoptric arrangement；The preparation method for going out radiant for the wide-angle using the structure LED chip, step S1 is adjusted are as follows: choosing
Take LED wafer, LED wafer have be disposed with from bottom to top lower reflecting layer, P-GaN layers, luminescent layer, N-GaN layers and
Substrate carries out LED wafer to detect whether qualification；And on the qualified wafer top surface substrate surface of detection in one layer of setting
Reflecting layer 8 has the LED wafer baking-curing in middle reflecting layer to top surface, is then cut, sliver, obtained from bottom to top
It is disposed with lower reflecting layer, P-GaN layers, luminescent layer, N-GaN layers, the LED chip of substrate and middle reflecting layer 8, it is qualified to choose
LED chip 1 with middle reflecting layer 8；Remaining step is constant.
Second medium hyaline layer is additionally provided between first medium hyaline layer and reflecting layer, and first medium hyaline layer reflects
Rate is higher than in second medium hyaline layer refractive index.
Go out radiant for the wide-angle of the structure, preparation step advanced optimizes step S3 are as follows: have first
The semi-finished product top surface that medium hyaline layer 4 and blue light answer excitation layer 2 sequentially forms interface clearly second medium hyaline layer and mirror surface
Reflecting layer 3 on shape；In such manner, it is possible on the first medium hyaline layer 4 and mirror-like of Figure 15 between reflecting layer 3 multiform at one layer
Second medium hyaline layer further increases the light-emitting angle of LED chip, is conducive to direct the light to high refractive index transparent ducting layer,
Increase its light-emitting angle, further hoisting light mixing effect.
Embodiment 3
The present embodiment area source mould group includes that substrate 5, high refractive index transparent ducting layer 6, Diffusion barrier layer 7 and wide-angle go out light
Light source, the present embodiment wide-angle go out radiant and go out radiant or the wide-angle of embodiment 2 goes out light light using the wide-angle of embodiment 1
Source is provided with several wide-angles and goes out radiant as shown in Figure 17 and Figure 18 on substrate 5, be additionally provided with covering big angle on the substrate 5
The high refractive index transparent ducting layer 6 of radiant out is spent, and the height of high refractive index transparent ducting layer 6 goes out equal to or higher than wide-angle
The height of radiant.
In the present embodiment, high refractive index transparent ducting layer 6 is Single Medium and equally distributed dielectric layer, limits high refraction
A surface in rate transparent waveguide layer 6 far from substrate 5 is upper waveguide interface, i.e., upper waveguide interface is high refractive index in figure
The upper surface of transparent waveguide layer 6；Side medium in upper waveguide interface two sides far from substrate is outer medium layer, that is, is located at
Medium above 6 upper surface of high refractive index transparent ducting layer is outer medium layer；
The refractive index of high refractive index transparent ducting layer 6 is denoted as n2, the refractive index of outer medium layer is denoted as n3, n2> n3；
In addition, limit in high refractive index transparent ducting layer 6 close to substrate 5 another surface as lower waveguide interface, i.e.,
Lower waveguide interface is the lower surface of high refractive index transparent ducting layer 6 in figure；It is provided between lower waveguide interface and substrate 5
Waveguide reflecting layer 9.
In the present embodiment, it is additionally provided with Diffusion barrier layer 7 above the upper waveguide interface of high refractive index transparent ducting layer 6,
There are air-gaps between Diffusion barrier layer 7 and high refractive index transparent ducting layer 6, and the air-gap is as outer medium layer.It is specific: to expand
The lower surface for dissipating film layer 7 has rough micro-structure, and micro-structure accounts for the 10~100% of 7 gross area of Diffusion barrier layer；Diffusion
7 lower surface micro-structure of film layer is close to waveguide interface on high refractive index transparent ducting layer 6 and forms air-gap.
As the preferred or optional of the present embodiment, go out using the wide-angle in embodiment 2 with first medium hyaline layer 4
When radiant makes area source mould group,
As shown in figure 20, the thickness of 4 side of first medium hyaline layer is denoted as a, and the height of first medium hyaline layer 4 is denoted as h,
The refractive index of first medium hyaline layer 4 is denoted as n1, the refractive index of high refractive index transparent ducting layer 6 is denoted as n2, the refraction of outer medium layer
Rate is denoted as n3, in order to realize the total reflection of light, need to meet
In the present embodiment, substrate 5 is transparent flexible substrate, and specifically optional PI plate, PET plate, PEV plate or substrate 5 are
Aluminium sheet, sheet copper, ceramic wafer specifically can be selected in metal rigidity plate.
As shown in figure 19, substrate 5 is multiple spaced discontinuous strip substrates, and wide-angle goes out radiant and corresponds to
It is arranged on strip substrate.
In the present embodiment, by taking substrate 5 is the area source mould group of multiple spaced discontinuous strip substrates as an example, tool
Body illustrates preparation method, which includes the following steps:
(1) continuous substrate is selected, the whole die bond on substrate mounts wide-angle that is, on substrate and goes out radiant, then
The strip substrate 5 that formation width is 0.2-3mm is cut, the one or both ends of each strip substrate 5 pass through electrode plate or electrode assembly
Connection forms an overall structure；
(2) overall structure in (1) is placed in reusable mold or backlight, then the entirety in entire backlight
Coat high refractive transparent material (silica gel or acrylic material) so that high refractive transparent material cover entire strip substrate surface and
Region between adjacent strip substrate, last integral die shaping form the high refractive index transparent that covering wide-angle goes out radiant
Ducting layer 6；
(3) Diffusion barrier layer 7 is set in the upper surface of high refractive index transparent ducting layer 6, backlight module is formed, finally by backlight
Mould group is removed from backlight.
The present embodiment product can be applied to ultrathin display, panel light (having frame and Rimless), bulb lamp, filament lamp,
Fluorescent lamp, street lamp.
As the more specific embodiment of the present embodiment:
Between substrate 5 and high refractive index transparent ducting layer 6 or between high refractive index transparent ducting layer 6 and Diffusion barrier layer 7
Add local scattering micro-structural.
Ball shape structure can be used in the diffusion particle of local scattering micro-structural, and function is similar with lenticule.Micro-structure includes
Holography, cylindrical lens, microlens array and stretchable diffraction grating.Can by using compression roller stamped method, diffusion photoetching process,
Hot padding, self-assembly method and isotropic etching method, realize local scattering micro-structural in diffusion film surface.Light is penetrating
It is focused and scatters in certain exiting angle range again when these particles, have the function of enhancing outgoing brightness.In addition, expanding
It dissipates particle diameter, also ensure that light will not go out in direct projection from diffusion barrier with the refractive index difference of film-forming resin, provide equal
Even light mixing effect and uniform brightness.With the diffusion barrier of scattering micro-structural involved in the utility model, surface week is utilized
The micro-structure of phase or random distribution modulates the optical states of incident light to the catadioptric effect of light.Using this kind of there is part to dissipate
The obtained area source modular structure of optical diffusion film for penetrating micro-structure has many advantages, such as that visual angle is wide, transmitance is high, even light mixing.
Area source mould group made from radiant and traditional approach down straight aphototropism mode set are gone out using 1 wide-angle of the present embodiment
Parameters comparison is as follows:
6 inches of mobile phone backlight application cases
Conclusion: as can be seen from the above table, under the premise of in light emitting region, area is identical, backlight module thickness is identical, this reality
It applies in example, main light emission energy position is offset to side from surface due to going out radiant using wide-angle four sides, meanwhile, hair
Angular is up to 170 ° or more, under the premise of guaranteeing identical light mixing effect, effectively raises the spacing of adjacent light source, substantially
Reduce light source granule number.
Embodiment 4
The structure of the present embodiment area source mould group is substantially the same manner as Example 3, including substrate 5, high refractive index transparent waveguide
Layer 6, Diffusion barrier layer 7 and wide-angle go out radiant, and the present embodiment wide-angle goes out radiant and goes out light light using the wide-angle of embodiment 1
The wide-angle of source or embodiment 2 goes out radiant, as shown in figure 21 and figure, several wide-angles is provided on substrate 5 and go out radiant,
It is additionally provided with the high refractive index transparent ducting layer 6 that covering wide-angle goes out radiant, and high refractive index transparent ducting layer on the substrate 5
6 height is equal to or higher than the height that wide-angle goes out radiant, goes back above the upper waveguide interface of high refractive index transparent ducting layer 6
It is provided with Diffusion barrier layer 7.
The difference is that: existing air-gap becomes air layer between Diffusion barrier layer 7 and high refractive index transparent ducting layer 6
10.Specifically:
In the present embodiment, high refractive index transparent ducting layer 6 is the Single Medium hyaline layer without fluorescent powder, limits high refraction
A surface in rate transparent waveguide layer 6 far from substrate 1 is upper waveguide interface, upper waveguide interface and Diffusion barrier layer 4 it
Between be provided with air layer 10, air layer 10 as in upper waveguide interface two sides far from the outer medium layer of substrate side, western medium
The refractive index of matter layer is denoted as n3, the refractive index of high refractive index transparent ducting layer 6 is denoted as n2, and n2> n3；
And another surface in high refractive index transparent ducting layer 6 close to substrate 1 is limited as lower waveguide interface, in lower wave
It leads and is provided with waveguide reflecting layer 9 between interface and substrate 1.
The area source mould group of embodiment 3 and embodiment 4 can be applied to field of backlights.Face in embodiment 3 and embodiment 4
In light source module group structure, waveguide can be formed in high refractive index transparent ducting layer using the white light that wide-angle goes out radiant sending,
So that point light source changes to area source, increase the lateral of white light and propagate, can effective hoisting light mixing effect, be very suitable for high property
It can display backlight field.
The advantages of basic principles and main features and the utility model of the utility model have been shown and described above.This
The technical staff of industry is retouched in above embodiments and description it should be appreciated that the present utility model is not limited to the above embodiments
That states only illustrates the principles of the present invention, on the premise of not departing from the spirit and scope of the utility model, the utility model
It will also have various changes and improvements, these various changes and improvements fall within the scope of the claimed invention.This is practical new
Type is claimed range and is defined by the appending claims and its equivalent thereof.
Claims (8)
1. a kind of wide-angle goes out radiant, it is characterised in that: including LED chip, the LED chip is inverted structure, LED chip
Including the P-GaN layer, luminescent layer, N-GaN layers and substrate set gradually from bottom to top, and it is anti-under the setting of the bottom surface of LED chip
Layer to be penetrated, the top surface of LED chip and side are provided with blue light and answer excitation layer, upper reflecting layer is arranged in the top surface that blue light answers excitation layer,
Four sides that the blue light answers excitation layer are full output optical zone, and upper reflecting layer top surface is entirely or partially echo area.
2. wide-angle according to claim 1 goes out radiant, it is characterised in that: anti-in the top surface setting of the LED chip
Layer is penetrated, and the middle reflecting layer is that part light out part divides catoptric arrangement.
3. wide-angle according to claim 1 or 2 goes out radiant, it is characterised in that: the blue light answers the top surface of excitation layer
Side is provided with one layer of first medium hyaline layer, the upper reflecting layer is located at the upper surface of first medium hyaline layer.
4. a kind of area source mould group for going out radiant using wide-angle described in claim 1, it is characterised in that: the area source mould
Group includes that substrate, high refractive index transparent ducting layer and wide-angle go out radiant,
It is provided with several wide-angles on the substrate and goes out radiant, setting covers all wide-angles and goes out radiant on substrate
High refractive index transparent ducting layer, the height of the high refractive index transparent ducting layer are equal to or higher than the top surface that wide-angle goes out radiant
Highly；
The high refractive index transparent ducting layer meets the following conditions simultaneously:
(1) the high refractive index transparent ducting layer is Single Medium and equally distributed dielectric layer；
(2) surface in high refractive index transparent ducting layer far from substrate is limited as upper waveguide interface, is located at upper waveguide point
Side medium in the two sides of interface far from substrate is outer medium layer, and the refractive index of high refractive index transparent ducting layer is denoted as n2, western medium
The refractive index of matter layer is denoted as n3, n2> n3；
(3) another surface in high refractive index transparent ducting layer close to substrate is limited as lower waveguide interface, in lower waveguide point
Waveguide reflecting layer is provided between interface and substrate.
5. area source mould group according to claim 4, it is characterised in that: the upper waveguide of the high refractive index transparent ducting layer
It is additionally provided with Diffusion barrier layer above interface, and there are air layer or air between Diffusion barrier layer and high refractive index transparent ducting layer
Gap, the air layer or air-gap are as outer medium layer.
6. area source mould group according to claim 5, it is characterised in that: the Diffusion barrier layer and high refractive index transparent waveguide
There are when air-gap between layer, the lower surface of the Diffusion barrier layer has rough micro-structure, and the micro-structure accounts for institute
State the 10~100% of the Diffusion barrier layer gross area；Diffusion barrier layer lower surface micro-structure is close on high refractive index transparent ducting layer
Waveguide interface forms air-gap.
7. area source mould group according to claim 6, it is characterised in that: the substrate and high refractive index transparent ducting layer it
Between or high refractive index transparent ducting layer and Diffusion barrier layer between add local scattering micro-structural.
8. area source mould group according to claim 4, it is characterised in that: the substrate is multiple spaced discontinuous
Formula strip substrate, and the wide-angle goes out radiant and is correspondingly arranged on strip substrate.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811074813 | 2018-09-14 | ||
| CN201811074813X | 2018-09-14 | ||
| CN201811330815 | 2018-11-09 | ||
| CN2018113308150 | 2018-11-09 |
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| Publication Number | Publication Date |
|---|---|
| CN209638931U true CN209638931U (en) | 2019-11-15 |
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| CN201920020307.6U Active CN209638931U (en) | 2018-09-14 | 2019-01-07 | Wide-angle goes out radiant and area source mould group |
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| CN (1) | CN209638931U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797330A (en) * | 2018-08-03 | 2020-02-14 | 海迪科（南通）光电科技有限公司 | Large-angle light emitting source, surface light source module and preparation method of light emitting source |
| CN116779744A (en) * | 2023-06-30 | 2023-09-19 | 淮安澳洋顺昌光电技术有限公司 | Chip-level LED packaging element |
-
2019
- 2019-01-07 CN CN201920020307.6U patent/CN209638931U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797330A (en) * | 2018-08-03 | 2020-02-14 | 海迪科（南通）光电科技有限公司 | Large-angle light emitting source, surface light source module and preparation method of light emitting source |
| CN116779744A (en) * | 2023-06-30 | 2023-09-19 | 淮安澳洋顺昌光电技术有限公司 | Chip-level LED packaging element |
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Denomination of utility model: Large angle light source and surface light source module Effective date of registration: 20220905 Granted publication date: 20191115 Pledgee: Zhonggao Financing Guarantee Co.,Ltd. Pledgor: DURA-CHIP (NANTONG) Ltd. Registration number: Y2022980014438 |