CN106784236A - LED source and its manufacture method, display panel - Google Patents
LED source and its manufacture method, display panel Download PDFInfo
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- CN106784236A CN106784236A CN201611046256.1A CN201611046256A CN106784236A CN 106784236 A CN106784236 A CN 106784236A CN 201611046256 A CN201611046256 A CN 201611046256A CN 106784236 A CN106784236 A CN 106784236A
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- led source
- quanta point
- point material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Abstract
The invention discloses a kind of LED source and its manufacture method, display panel.The LED source includes：Blue chip, the blue chip is used to produce blue light；Quanta point material component, the quanta point material component is arranged on the surface of the blue chip, the quanta point material component is used to receive the blue light produced by the blue chip, and for producing feux rouges and green glow under the exciting of the blue light, wherein, the feux rouges, the green glow form white light with the blue light；Reflecting member, the reflecting member is arranged on the quanta point material component dorsad on the surface of the blue chip, and the reflecting member is used to reflect the white light towards the surrounding of the quanta point material component.The present invention can cause that produced light has colour gamut higher.
Description
【Technical field】
The present invention relates to field of backlights, more particularly to a kind of LED source and its manufacture method, display panel.
【Background technology】
Traditional display panel is typically using white light LEDs (Light Emitting Diode, light emitting diode) as the back of the body
Light source.
The color saturation of the light produced by above-mentioned white light LEDs is relatively low, and is limited to the characteristic of the white light LEDs,
Light produced by the white light LEDs cannot further lift colour gamut.
Therefore, the display effect using above-mentioned traditional display panel of above-mentioned white light LEDs is poor, and thin in order to realize
Type, colour gamut high, the requirement of HDR (HDR, High Dynamic Range), above-mentioned traditional display panel are needed to use
A fairly large number of above-mentioned white light LEDs.
Therefore, it is necessary to a kind of new technical scheme is proposed, to solve above-mentioned technical problem.
【The content of the invention】
It is an object of the invention to provide a kind of LED source and its manufacture method, display panel, it can be caused
Produced light has colour gamut higher.
To solve the above problems, technical scheme is as follows：
A kind of LED source, the LED source includes：Blue chip, the blue chip is used to produce
Raw blue light；Quanta point material component, the quanta point material component is arranged on the surface of the blue chip, the quantum dot
Material members are used to receive the blue light produced by the blue chip, and for the generation feux rouges under the exciting of the blue light
And green glow, wherein, the feux rouges, the green glow form white light with the blue light；Reflecting member, the reflecting member is set
On the quanta point material the component dorsad surface of the blue chip, the reflecting member is used for the white light towards described
The surrounding reflection of quanta point material component.
In above-mentioned LED source, the LED source also includes：First obstruction member, described first
Obstruction member is arranged between the blue chip and the quanta point material component；Second obstruction member, described second intercepts
Component is arranged on the surrounding of the quanta point material component；Wherein, first obstruction member is equal with second obstruction member
Contacted with the quanta point material component for intercepting water, oxygen.
In above-mentioned LED source, first obstruction member and second obstruction member be additionally operable to pass through by
The white light that the feux rouges, the green glow are formed with the blue light.
In above-mentioned LED source, the LED source also includes：Electrode, the electrode is arranged on institute
Blue chip is stated dorsad on the surface of the quanta point material component, the electrode is connected with the blue chip.
In above-mentioned LED source, the LED source also includes：Clad member, the clad member
The surrounding of the blue chip is arranged on, the clad member is used to coat the side of the blue chip.
A kind of display panel including above-mentioned LED source, the display panel includes liquid crystal cell and backlight mould
Group, the liquid crystal cell is integrated with the backlight module stack combinations, and LED source is with the shape of array at least described in two
Formula is arranged on the backboard of the backlight module.
A kind of manufacture method of LED source, the described method comprises the following steps：A, formation reflecting member；B,
Quantum dot material members are set on the surface of the reflecting member；C, in the quanta point material component dorsad reflecting member
Surface on blue chip is set；Wherein, the blue chip is used to produce blue light, and the quanta point material component is for receiving
The blue light produced by the blue chip, and for producing feux rouges and green glow, the reflection under the exciting of the blue light
Component is used for the white light that will be formed with the blue light by the feux rouges, the green glow towards the four of the quanta point material component
Week reflection.
In the manufacture method of above-mentioned LED source, after the step A, and before the step B,
Methods described is further comprising the steps of：D, the second obstruction member is set on the surface of the reflecting member；The step B is：
The quanta point material is set on the surface of the reflecting member and in the second obstruction member area encompassed
Component.
In the manufacture method of above-mentioned LED source, after the step B, and before the step C,
Methods described is further comprising the steps of：E, on the quanta point material the component dorsad surface of the reflecting member and in institute
State the second obstruction member and the first obstruction member dorsad is set on the surface of the reflecting member；The step C is：Described first
Obstruction member dorsad sets the blue chip on the surface of the quanta point material component.
In the manufacture method of above-mentioned LED source, after the step C, methods described also includes following step
Suddenly：F, on the blue chip dorsad surface of the quanta point material component electrode is set, wherein, the electrode with it is described
Blue chip is connected.
In the manufacture method of above-mentioned LED source, after the step F, methods described also includes following step
Suddenly：G, the surrounding setting clad member in the blue chip.
Compared with the prior art, the present invention can cause that produced light has colour gamut higher.
It is that the above of the invention can be become apparent, preferred embodiment cited below particularly, and coordinate institute's accompanying drawings, make
Describe in detail as follows.
【Brief description of the drawings】
Fig. 1 is the schematic diagram of LED source of the invention；
Fig. 2 to Fig. 8 is the schematic diagram of the manufacture method of LED source of the invention；
Fig. 9 is the flow chart of the manufacture method of LED source of the invention.
【Specific embodiment】
The word " embodiment " that this specification is used means example, example or illustration.Additionally, this specification and appended power
Profit require used in article " " can usually be interpreted " one or more ", unless otherwise or from context
Can understand and determine singulative.
LED source of the invention can apply in display panel, and the display panel can be TFT-LCD
(Thin Film Transistor Liquid Crystal Display, liquid crystal display panel of thin film transistor) etc., it is described aobvious
Show that panel includes liquid crystal cell and backlight module, the liquid crystal cell is integrated with the backlight module stack combinations, at least described in two
LED source is arranged on the backboard of the backlight module in an array manner.
With reference to Fig. 1, Fig. 1 is the schematic diagram of LED source of the invention.
LED source of the invention includes blue chip 105, quanta point material component 103 and reflecting member 101.
The blue chip 105 is used to produce blue light.
The quanta point material component 103 is arranged on the surface of the blue chip 105, the quanta point material component
103 are used to receiving the blue light produced by the blue chip 105, and for produced under the exciting of the blue light feux rouges and
Green glow, wherein, the feux rouges, the green glow form white light with the blue light.That is, produced by described blue chip 105
The blue light is used to excite the quanta point material component 103 to produce the feux rouges and the green glow.
The reflecting member 101 is arranged on the surface of the quanta point material component 103 dorsad blue chip 105
On, the reflecting member 101 is used to reflect the white light towards the surrounding of the quanta point material component 103.
The reflecting member 101 is a speculum, and the speculum has a reflecting surface.
At least two prism portions are provided with the reflecting surface of the reflecting member 101, the prism portion is used for institute
White light is stated to be reflected towards the surrounding of the quanta point material component 103.
Transparent dielectric layer is also provided with the reflecting surface, the prism portion is arranged on the table of the transparent dielectric layer
Face or inside.The prism portion is evenly distributed throughout the surface of the reflecting surface or the surface or interior of the transparent dielectric layer
Portion.
It is also provided with an at least lens in the reflecting member 101, the lens are towards the quanta point material component
103 protrusion, the lens be arranged on the reflecting surface or the transparent dielectric layer surface or inside.The lens are used
Reflected towards the surrounding of the quanta point material component 103 in by the white light.
Preferably, the speculum is convex mirror, and the convex mirror is towards the quanta point material component 103 to be placed
Protrude in direction.
In LED source of the invention, the LED source also includes the He of the first obstruction member 104
Second obstruction member 102.
First obstruction member 104 is arranged between the blue chip 105 and the quanta point material component 103.
Second obstruction member 102 is arranged on the surrounding of the quanta point material component 103.
Wherein, first obstruction member 104, second obstruction member 102 are used to resistance with the reflecting member 101
Water proof, oxygen are contacted with the quanta point material component 103.
That is, first obstruction member 104, second obstruction member 102 are used for the reflecting member 101
The quanta point material component 103 is sealed jointly.
The first barrier material corresponding to first obstruction member 104 with corresponding to second obstruction member 102
Second barrier material is identical.
In LED source of the invention, first obstruction member 104 and second obstruction member 102 are also
For through the white light formed with the blue light by the feux rouges, the green glow.
The side of first obstruction member 104 and second obstruction member 102 is the LED source
Exiting surface.
In LED source of the invention, the LED source also includes electrode 106, the electrode
106 are arranged on the blue chip 105 dorsad on the surface of the quanta point material component 103, the electrode 106 and the indigo plant
Optical chip 105 is connected.
In LED source of the invention, the LED source also includes clad member 107, the bag
The surrounding that component 107 is arranged on the blue chip 105 is covered, the clad member 107 is used to coat the blue chip 105
Side.
Referring to figs. 2 to Fig. 9, Fig. 2 to Fig. 8 is the schematic diagram of the manufacture method of LED source of the invention, and Fig. 9 is
The flow chart of the manufacture method of LED source of the invention.
The manufacture method of LED source of the invention is comprised the following steps：
A (step 901), formation reflecting member 101.
B (step 903), the setting quantum dot material members 103 on the surface of the reflecting member 101.
C (step 905), on the quanta point material the component 103 dorsad surface of the reflecting member 101 blue light is set
Chip 105.
Wherein, the blue chip 105 is used to produce blue light, and the quanta point material component 103 is for receiving the indigo plant
The blue light produced by optical chip 105, and for producing feux rouges and green glow, the reflecting member under the exciting of the blue light
101 are used for the white light that will be formed with the blue light by the feux rouges, the green glow towards the quanta point material component 103
Surrounding reflects.
The step A (step 901) includes：
A1, offer speculum, wherein, the speculum has a reflecting surface.
A2, at least two prism portions are set on the reflecting surface of the reflecting member 101, wherein, the prism portion
For the white light to be reflected towards the surrounding of the quanta point material component 103.
After the step a1, and before the step a2, the step A also includes：
A3, on the reflecting surface transparent dielectric layer is set.
The step a2 is：
Set in the inside on the surface or the transparent dielectric layer of the surface of the reflecting surface or the transparent dielectric layer
The prism portion is put, wherein, the prism portion is evenly distributed throughout the surface of the reflecting surface or the table of the transparent dielectric layer
Face or inside.
The step A (step 901) also includes：
A4, on the reflecting surface or the transparent dielectric layer surface or internal lens, the lens court are set
The quanta point material component 103 protrudes.The lens be used for by the white light towards the quanta point material component 103 surrounding
Reflection.
In the manufacture method of LED source of the invention, after the step A (step 901), with
And before the step B (step 903), methods described is further comprising the steps of：
D (step 902), the second obstruction member 102 is set on the surface of the reflecting member 101.
The step B (step 903) is：
Set on the surface of the reflecting member 101 and in the area encompassed of the second obstruction member 102
The quanta point material component 103.
Specifically, the step D (step 902) includes：
D1, the second barrier material is set on the surface of the reflecting member 101, and forms the second spacer material layer
1021, wherein, second barrier material be arranged on the reflecting surface or the transparent dielectric layer surface；
D2, remove the part that central region is located in second spacer material layer 1021, or, in the way of imprinting
Part in second spacer material layer 1021 positioned at central region forms recessed cup structure；
D3, second spacer material layer 1021 is solidified, to form second obstruction member 102.
In the manufacture method of LED source of the invention, after the step B, and in the step C
Before (step 905), methods described is further comprising the steps of：
E (step 904), on the quanta point material the component 103 dorsad surface of the reflecting member 101 and in institute
State the second obstruction member 102 and the first obstruction member 104 dorsad is set on the surface of the reflecting member 101.
The step C (step 905) is：
The blue light core is set on first the obstruction member 104 dorsad surface of the quanta point material component 103
Piece 105.
Specifically, the step E (step 904) includes：
E1, on the quanta point material the component 103 dorsad surface of the reflecting member 101 and described second resistance
Every setting the first barrier material on the component 102 dorsad surface of the reflecting member 101, and form the first spacer material layer；
E2, first spacer material layer is solidified, to form first obstruction member 104.
Wherein, first barrier material is identical with second barrier material.
In the manufacture method of LED source of the invention, after the step C (step 905), institute
State method further comprising the steps of：
F (step 906), on the blue chip 105 dorsad surface of the quanta point material component 103 electrode is set
106, wherein, the electrode 106 is connected with the blue chip 105.
In the manufacture method of LED source of the invention, after the step F (step 906), institute
State method further comprising the steps of：
G (step 907), the surrounding setting clad member 107 in the blue chip 105.
Because the LED source of the invention contains quantum dot material members, the LED source profit
Excite the quanta point material component to generate feux rouges and green glow with blue light, and the blue light, the feux rouges and the green glow are mixed
Conjunction forms white light, relative to traditional white light LEDs, the FWHM of the light produced by the LED source of the invention
(Full Wave at Half Maximum, peak width at half height) is narrower, therefore with colour gamut higher.
Further, since the quanta point material component is coated on first obstruction member 104, second obstruction member
102 with the reflecting member 101 in, therefore the quanta point material component can with containing water, oxygen external environment isolation, from
And can cause that the LED source avoids the occurrence of the phenomenon that fluorescence efficiency irreversibly declines rapidly.
Further, since white light produced by the LED source of the invention is from the LED source
Side sends, and LED source is arranged on the backlight module of the display panel in an array manner at least described in two
Backboard on, therefore the display panel can realize regional luminance control (Local by the LED source
Dimming), and can in downward back optical mode to light mixing distance (Optical Distance) less than 8 millimeters of requirement
Under prevent the generation of lamp shadow, be conducive to reducing the thickness of the backlight module and reduce the backlight module to traditional white light
The demand of the quantity of LED, i.e. the LED source of the invention is adapted to liquid crystal display panel of thin film transistor pair
Compared with high dynamic contrast, the requirement of slim, HDR (HDR, High Dynamic Range).
In sum, although the present invention it is disclosed above with preferred embodiment, but above preferred embodiment and be not used to limit
The system present invention, one of ordinary skill in the art without departing from the spirit and scope of the present invention, can make various changes and profit
Adorn, therefore protection scope of the present invention is defined by the scope that claim is defined.
Claims (11)
1. a kind of LED source, it is characterised in that the LED source includes：
Blue chip, the blue chip is used to produce blue light；
Quanta point material component, the quanta point material component is arranged on the surface of the blue chip, the quantum dot material
Material component is used to receiving the blue light produced by the blue chip, and for produced under the exciting of the blue light feux rouges and
Green glow, wherein, the feux rouges, the green glow form white light with the blue light；
Reflecting member, the reflecting member is arranged on the quanta point material component dorsad on the surface of the blue chip, institute
Reflecting member is stated for the white light to be reflected towards the surrounding of the quanta point material component.
2. LED source according to claim 1, it is characterised in that the LED source also includes：
First obstruction member, first obstruction member is arranged between the blue chip and the quanta point material component；
Second obstruction member, second obstruction member is arranged on the surrounding of the quanta point material component；
Wherein, first obstruction member is used to intercept water, oxygen and the quanta point material structure with second obstruction member
Part is contacted.
3. LED source according to claim 2, it is characterised in that first obstruction member and described second
Obstruction member is additionally operable to through the white light formed with the blue light by the feux rouges, the green glow.
4. LED source according to claim 1, it is characterised in that the LED source also includes：
Electrode, the electrode is arranged on the blue chip dorsad on the surface of the quanta point material component, the electrode with
The blue chip is connected.
5. LED source according to claim 1, it is characterised in that the LED source also includes：
Clad member, the clad member is arranged on the surrounding of the blue chip, and the clad member is used to coat the indigo plant
The side of optical chip.
6. a kind of display panel of the LED source including as described in any one in claim 1 to 5, its feature exists
In the display panel includes liquid crystal cell and backlight module, and the liquid crystal cell is integrated with the backlight module stack combinations, extremely
LED source described in few two is arranged on the backboard of the backlight module in an array manner.
7. a kind of manufacture method of LED source, it is characterised in that the described method comprises the following steps：
A, formation reflecting member；
B, the setting quantum dot material members on the surface of the reflecting member；
C, on the quanta point material the component dorsad surface of the reflecting member blue chip is set；
Wherein, the blue chip is used to produce blue light, the quanta point material component to be produced for receiving the blue chip
The raw blue light, and for producing feux rouges and green glow under the exciting of the blue light, the reflecting member is used for will be by described
The white light that feux rouges, the green glow are formed with the blue light reflects towards the surrounding of the quanta point material component.
8. the manufacture method of LED source according to claim 7, it is characterised in that after the step A,
And before the step B, methods described is further comprising the steps of：
D, the second obstruction member is set on the surface of the reflecting member；
The step B is：
The quantum dot is set on the surface of the reflecting member and in the second obstruction member area encompassed
Material members.
9. the manufacture method of LED source according to claim 8, it is characterised in that after the step B,
And before the step C, methods described is further comprising the steps of：
E, on the quanta point material the component dorsad surface of the reflecting member and in second obstruction member dorsad
First obstruction member is set on the surface of the reflecting member；
The step C is：
The blue chip is set on first the obstruction member dorsad surface of the quanta point material component.
10. the manufacture method of LED source according to claim 9, it is characterised in that the step C it
Afterwards, methods described is further comprising the steps of：
F, on the blue chip dorsad surface of the quanta point material component electrode is set, wherein, the electrode and institute
Blue chip is stated to be connected.
The manufacture method of 11. LED sources according to claim 10, it is characterised in that the step F it
Afterwards, methods described is further comprising the steps of：
G, the surrounding setting clad member in the blue chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611046256.1A CN106784236A (en) | 2016-11-22 | 2016-11-22 | LED source and its manufacture method, display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611046256.1A CN106784236A (en) | 2016-11-22 | 2016-11-22 | LED source and its manufacture method, display panel |
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| CN106784236A true CN106784236A (en) | 2017-05-31 |
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| CN201611046256.1A Pending CN106784236A (en) | 2016-11-22 | 2016-11-22 | LED source and its manufacture method, display panel |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109001936A (en) * | 2017-06-06 | 2018-12-14 | 群创光电股份有限公司 | Light source module and display equipment |
| WO2019019253A1 (en) * | 2017-07-24 | 2019-01-31 | 武汉华星光电技术有限公司 | Backlight module and liquid crystal display |
| US10495923B2 (en) | 2017-07-24 | 2019-12-03 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Backlight module and liquid crystal display |
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| US10495923B2 (en) | 2017-07-24 | 2019-12-03 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Backlight module and liquid crystal display |
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