CN101512438A - Apparatus and method for conditioning an immersion fluid - Google Patents
Apparatus and method for conditioning an immersion fluid Download PDFInfo
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- CN101512438A CN101512438A CNA2007800277756A CN200780027775A CN101512438A CN 101512438 A CN101512438 A CN 101512438A CN A2007800277756 A CNA2007800277756 A CN A2007800277756A CN 200780027775 A CN200780027775 A CN 200780027775A CN 101512438 A CN101512438 A CN 101512438A
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Abstract
The present invention includes apparatus and methods for producing a conditioned immersion fluid for use in an immersion lithography process. The conditioned immersion fluid protects the immersion system lens and reduces or eliminates deposition of contaminants onto the lens that can adversely affect the lens transmission and durability of an immersion lithography system.
Description
The title of the application's case request application on May 21st, 2007 is the U.S. Provisional Application case the 60/931st of " being used to regulate the apparatus and method of immersion fluid ", the title of application on July 21st, 275 and 2006 is the U.S. Provisional Application case the 60/832nd of " being used to regulate the apparatus and method of immersion fluid ", 472 right, its teaching is incorporated this paper into way of reference.
Background technology
Water retting formula lithography is a kind of method that will allow the characteristic dimension continuation reduction of semiconductor subassembly.Make water replace air increased medium as the medium between lens and the wafer refractive index, and improve the resolution of little shadow to numerical value near the refractive index of lens.Water retting formula lithography is allowed use laser, and the laser of 193 nanometers (nm) for example is to produce compared to using the possible fine geometric figure of traditional lithography.
Although water retting formula lithography has several advantages than traditional lithography, himself have a series of technical challenges.A kind of special challenge is a supply water retting medium during exposure program, and this water retting medium suitably is not contain the pollutant that can produce defective in addition.
A kind of typical water retting shadow system that declines has several unit operationss, and it can be used for providing water to be suitable as steeping medium.Formant operation can comprise that (for example) extract, the reduction of total oxidizable carbon (TOC), but dissolved oxygen remove temperature control and particle control.Yet each unit operations provides the further pollution of steeping medium.
For the impregnated lithography, the quality of the liquid that is utilized (for example water) has been kept clarity (low absorbance log) and the purity (pollutant of part per trillion (ppt) content) of optics of liquids character in top, to guarantee the high-transmission rate of image radiation through liquid and lens.For example, the 193nm optical absorption typical case in high-purity water is 0.01/cm, and along with trace absorbs intrinsic contaminant and variation tempestuously.
Colloidal silica comprises that very the colloidal silica of fine particles form (for example, diameter such as 2-3 nanometer is little) is very important for semi-conductor industry.The processing stage that the manufacturing of VLSI (very large scale integrated circuit) (VLSI) relating to repeatedly semiconductor wafer surface, its each stage typical case use ultrapure water cleaning wafer that continuing.No matter frequency of cleaning and the concern that is accompanied by the monitoring ultrapure water, colloidal silica and other impurity can be accumulated on the wafer, cause the defective on the gained semiconductor subassembly.
Colloidal silica is difficult to detect when particularly very thin particulate form.Such colloidal silica can not be detected with scanning electron microscope (SEM), but needs in fact more expensive electron scanning wear the tunnel microscope.Perhaps, the detecting of colloidal silica can be determined the total quantity or the ratio of silica by atomic absorption spectrography (AAS), add to use traditional mechanism to measure through the dissolving silica, thereby colloidal silica is that whole silicas deduct the silica through dissolving.Silica is very unique because its existence in DI water can not be by pH or the conduction standard that is generally used for measuring water purity detect.
Silica can be with suspended solid in water, and the form of colloid exists, and exists with the form of the compound that forms with iron, aluminium and organism, exists with the form of polymkeric substance and solvable/reactive species.The principal element that influences silica solubleness is the characteristic and the pressure of temperature, pH, solid phase.Under the pH of water level (usually in the 6-8.5 scope), silica is with molecular species, H
4SiO
4Or H
2SiO
3(an adjacent or silicic acid) form exists.They are very weak acid (pKa=9.4), and are to exist with the nonionic species in water.
When the silica concentration in water increased, silica was often understood polymerization, formed dipolymer, trimer, tetramer etc.Can carry out polyreaction and arrive the degree of colloidal state by dissolved state, and may form the degree of insoluble gel at last to silica.Silica typical case in UPW exists with following two kinds of principal modes: through dissolving silica (chemical species) and colloidal silica (physical form: typical sizes is for＜0.1 micron).Depending on through dissolving silica and colloidal silica under the acidity of water and can intercourse.
A large amount of ultrapure waters can be used for making semiconductor in the processing procedure, and boron can exist with pollutant in original or pre-service feed water.The p-N-type semiconductor N alloy of boron for using in the manufacturing solid-state electronic assembly, and in the doped silicon crystal, acting as main charge carriers.Make the processing procedure fluid in semiconductor, developer for example, cleaning fluid, steam, in rinse water or the analog boron in proper order-existence of ppb content can produce the surface deposition of boron, can in various different process stage (particularly heating or ion implantation stage), incorporate in the Silicon Wafer then, and can change desire dopant profiles or change the characteristic electron of substrate in addition.
In dipping declined shadow, the water droplet residue was with latent defect source identification.After deliberation many methods reduce the water droplet in the Dilvar zone outside.Yet from viewpoint physically, crystal column surface is to be difficult to very much keep dry behind impregnated exposure.The water droplet residue causes the watermark defective of scope from micron-size circular flaw to inferior micron scum silica frost defective easily.
Summary of the invention
The present invention includes and a kind ofly be used for being manufactured on that dipping declines that the shadow program uses through regulating the apparatus and method of immersion fluid.Protected dipping systems lens and reduction or destroy contaminants to be deposited on the lens through regulating immersion fluid, the lens penetration and the durability of pollutant sediment meeting adverse effect impregnated microlithography system on lens.
In a concrete mode, the present invention includes a kind of device with flow path, it comprises: (a) the pressurization source of supply feed liquid (for example water, as the feed water through degasification) auto levelizer; (b) oxidation unit, it has reception first flow of liquid and makes first-class middle all or part organic pollutant degradation become the inlet of oxidative breakdown product, outlet by oxidation unit produces the liquid that contains oxidative breakdown product thus, and wherein oxidative breakdown product comprises carbon dioxide; (c) have the high-purity deaerator of the inlet of the liquid of accepting to contain oxidative breakdown product, deaerator is used for removing all or part oxidative breakdown product from the liquid that contains oxidative breakdown product, produces second flow of liquid thus; (d) has the purifier of the inlet that is used to receive second flow of liquid, purifier comprises a kind of being used for from remove the material bed of the second stream pollutant pollutant without the oxidation unit degraded, purifier further comprises ion exchange bed (the hybrid ionic exchange bed that for example contains kation and anion exchange resins), ion exchange bed is used for removing ionic contamination from second stream, and purifier has the inlet that removes the 3rd flow of liquid from purifier; (e) be used for removing particulate, colloid, gel or their combination to produce the particle filter of the 4th flow of liquid from the 3rd flow of liquid, and (f) has a high-purity thermoplasticity heat exchanger of the inlet that is used to receive the 4th flow of liquid, this heat exchanger is used for regulating the temperature (for example being used in the temperature of flooding the shadow lens that decline) through the 4th flow of liquid of thermoplastic polymer, forms thus through regulating the liquid of temperature; Heat exchanger has outlet to remove the liquid of all or part through regulating temperature to using on the point from interchanger.In some concrete mode, feed liquid has the dissolved oxygen less than about 200ppb (part per billion).Before a specific device sequence has been described in flow path.In other concrete mode, reconfigurable order of in flow path, installing.For example, in a concrete mode, be the guiding particle filter and be to produce the 4th liquid flow in the guiding purifier from the liquid flow of particle filter from the liquid flow of high-purity deaerator.
The present invention includes a kind of method, it can comprise: (a) the pressurization source of supply feed liquid (for example water, as through degassed water); (b) the guiding feed liquid to have inlet receive first flow of liquid and degraded in first fluid all or partly organic contaminant be in the oxidation unit of oxidative breakdown product, produce the liquid that contains oxidative breakdown product thus, oxidative breakdown product comprises carbon dioxide, and removes the liquid that contains oxidative breakdown product from oxidation unit; (c) make the liquid contact high-purity thermoplasticity deaerator that contains oxidative breakdown product, this deaerator has the inlet reception and contains the liquid of oxidative breakdown product and use high-purity thermoplasticity deaerator to remove all or part oxidative breakdown product from liquid, produces second flow of liquid thus; (d) guiding second flow of liquid is through the purifier bed, this bed accessory has the material of the pollutant that removes the degraded of not oxidized unit and removes ionic contamination by liquid is contacted with ion exchange bed (the hybrid ionic exchange bed that for example contains kation and anion exchange resins), ion exchange bed removes ionic contamination, forms the 3rd flow of liquid thus; (f) filter the 3rd flow of liquid to remove particulate, colloid, gel or their combination, form the 4th flow of liquid thus; Reach and (g) use high-purity thermoplasticity interchanger to regulate the temperature of the 4th flow of liquid, this interchanger has inlet and receives the 4th stream, heat exchanger contacts the temperature (for example through the degasification replacement fluids) of regulating the 4th flow of liquid by thermoplastic polymer with replacement fluids, form thus through regulating the liquid of temperature; Heat exchanger has outlet to remove the liquid of all or part through regulating temperature to using point from interchanger.In some concrete mode, feed liquid has in the time of 25 ℃ about 17 to about 18.2mega-ohm resistance coefficient.In some concrete mode, feed liquid contains the dissolved oxygen less than about 200ppb (part per billion).In other concrete mode, before the particular order of steps of method has been described in.In other concrete mode, can rearrange the order of step.For example, in a concrete mode, be filtered to remove particulate, colloid, gel or their combination, form the 3rd flow of liquid thus, and the 3rd stream be guided through the purifier bed to form the 4th flow of liquid from second flow of liquid of high-purity deaerator.
Concrete mode of the present invention comprises a kind of device with flow path, and it comprises that an entry conductor can supply in the pressurization source auto levelizer of feed liquid (for example water, as through degassed water), and feed liquid contains the dissolved oxygen less than about 200ppb (part per billion).Device can comprise oxidation or degraded unit, and it has, and inlet receives feed liquid and degraded all or part organic contaminant in feed liquid becomes oxidative breakdown product, and for example oxidative breakdown product can comprise carbon dioxide.Oxidation or degraded unit have liquid inlet and liquid outlet, and can use one or more energy source (for example ultraviolet) with degradable organic pollutant.
This device can further comprise the high-purity deaerator, and it has an inlet can receive the liquid that contains oxidative breakdown product (for example water, as the water through degasification).For example can from feed liquid, remove all or part volatility oxidative breakdown product by vacuum stripping or steam stripped deaerator.The high-purity deaerator makes feed liquid have only a little or does not have organic contaminant that this pollutant can the use of the treated liquid of influence in dipping declines the shadow application unfriendly.In some version, the high-purity deaerator comprises microporosity hollow fiber or perfluor microporosity hollow fiber.
Device can further comprise purifier, and it has an inlet and can receive feed liquid (for example feed water, as through the degasification feed water) and remove the decline pollutant of feed liquid of the harmful and still not oxidized unit degraded of shadow program of dipping.Purifier can comprise the ion exchange bed that is used for removing from feed liquid ionic contamination.In a concrete mode, ion exchange bed is the ion exchange bed that mixes and comprises kation and anion exchange bed.In another concrete mode, ion exchange bed only comprises resin cation or anion exchange resins.Purifier can comprise other the lamination that is used to remove pollutant.Purifier has the outlet that is used for removing from purifier this feed liquid.Purifier and ion exchange bed can be single shell or are separated into one or more shell.In some version of device, purified material is the upstream at ion exchange bed.In other concrete mode, ion exchange bed is the upstream in purified material.
Device can comprise one or more particle filter, to remove particulate, colloid, gel or their combination from feed liquid (for example feed water, as the feed water of degasification).In a concrete mode, these particulates are the particulate that is not purified device, ion exchange bed and removes or the particulate of not oxidized unit degraded.In some concrete mode, one or more particle filter comprises the microporosity film.The microporosity film of particle filter can be charged or not by charged.In a concrete mode, the microporosity film is a plastic material.
Device also can comprise high-purity thermoplasticity heat exchanger, and it has inlet can receive feed liquid (for example feed water, as the feed water of degasification).Heat exchanger separates feed liquid and heat exchanger fluid to this thermoplastic polymer fluidization by the temperature of thermoplastic polymer adjusting feed liquid.In a concrete mode, heat-exchange fluid is by deoxygenation or degasification.In some version, heat exchanger comprises one or more hollow tube, for example perfluor thin-walled hollow tube.Feed liquid can be adjusted to the temperature that is used in the impregnated microlithography system.Heat exchanger has outlet to remove the liquid of all or part through regulating temperature to using point (for example liquid infiltration decline shadow system) from interchanger.
In a version of the present invention, device also can comprise deaerator (for example purify (polishing) deaerator) removing bubble and/or through dissolved gas from feed liquid, they may be not by degasification in advance to the decline degree of shadow use of dipping.In addition, illustrated as Figure 1A and 1B, device can be in addition with recycle or charging and the configuration of outflow configuration.Therefore, in some concrete mode, device can comprise that also a pump is to utilize purifier and/or the recycle of high-purity heat exchanger all or fluid partly.
The present invention also comprises a kind of method that is used for regulating the immersion fluid that floods the shadow program liquid that declines.This method can comprise effect or the step of supply through the pressurization source of degasification feed liquid (for example water) auto levelizer, or makes the effect or the step of feed liquid (for example water) degasification.About 17 to about 18.2mega-ohm resistance coefficient when the feed liquid of degasification can have at 25 ℃.Can for example contain dissolved oxygen through the degasification feed liquid less than about 200ppb (part per billion).
Be used for reconciling the method for steeping liq one, the feed liquid feed water of degasification (for example through) can flow into oxidation or degraded unit, and it has, and inlet receives this feed liquid and degraded all or part organic contaminant in feed liquid becomes catabolite.Catabolite can comprise carbon dioxide or other volatile byproducts.Come the liquid that contains catabolite of outlet of autoxidation or degraded unit that the liquid that contains oxidative breakdown product is contacted with high-purity thermoplasticity deaerator and handle, this high-purity thermoplasticity deaerator has inlet and can receive the liquid that contains oxidative breakdown product and come to remove all or part volatility catabolite by vacuum stripping, gas stripping or their combination from liquid.
This method can comprise further that the feed liquid feed water of degasification (for example through) is flowed is removable to the decline purifier bed of material of the harmful pollutant of shadow program of dipping through having.In a concrete mode, the pollutant not oxidized or degraded of degraded unit is to remove from feed liquid.This method can further remove ionic contamination by feed liquid is contacted with ion exchange bed from feed liquid.Ion exchange bed is to remove ionic contamination from this feed liquid.In a concrete mode, ion exchange bed is an ion exchange bed that mixes and comprises kation and anion exchange resins.In another concrete mode, ion exchange bed only comprises Zeo-karb or anion exchange resins.The gained purification of liquid can filter to remove particulate, colloid, gel or their combination from liquid through filtrator by making liquid flow.
This method also can comprise using to have the temperature that a high-purity thermoplasticity heat exchanger that receives the inlet of feed liquid is regulated the feed liquid feed water of degasification (for example through).Heat exchanger can receive feed liquid and can make feed liquid and the heat exchanger fluid heat exchanger fluid of degasification (for example through) contact the temperature of regulating feed liquid by thermoplastic polymer.In the version of a method, the high-purity heat exchanger can comprise perfluor thin-walled hollow tube.Feed liquid can be through being adjusted to the temperature that is used in impregnated microlithography system or the program and the scope of degree of stability.Heat exchanger has outlet and goes up (for example impregnated microlithography system) through adjustment liquid to the use point to transmit all or part from interchanger.
In some version of method, the purifier bed be positioned at the outlet of high-purity deaerator and ion exchange bed inlet between.In some version of method, high-purity thermoplasticity heat exchanger has been regulated the temperature of the feed liquid of purified bed processing.
Version of the present invention is to remove pollutant to the micro-degree of using point (POU), to reach the high program behaviour of impregnated lithography from liquid (for example water).It is the higher quality that contains low impurity that POU UPW (ultra-high purity water) system can be used to be further purified and to promote high-purity wafer factory, and is transported to dipping and declines in the shadow instrument lens.Impurity can join in the wafer factory water from semiconductor fabrication process material and pipe fitting assembly becomes UPW.
Version of the present invention can further provide temperature and FLOW CONTROL, with (for example water) and water and the microbubble on the interface of coated substrate in elimination or the reduction liquid.In a version of the present invention, the temperature control of steeping liq (as the water of handling through device) can be used to guarantee that refractive index, density, surface tension and gas solubility keep stable.
Concrete mode of the present invention provides and can be used for flooding the treated steeping liq that declines in the shadow program and can further protect lens and can reduce, eliminate or avoid the deposition of pollutant, and this pollutant can influence the persistence of lens penetration and impregnated microlithography system unfriendly.
In some version of apparatus and method, purifier removes boron.For particular industry was used, for example semiconductor manufacturing can produce the content of the boron that is lower than about 100ppt (part per trillion).The reduction of boron content can improve the semiconductor productive rate, because exist the unusual boron of low content can be obviously and advantageously influence the quality and the performance of semi-conductor chip in the deionization UPW product water that uses in the middle of making.
Description of drawings
The present invention will become clear to hit graphic explanation by the more illustrative especially concrete modes of the invention described above, and in this was graphic, similar element numbers was meant same components different in graphic.Graphic there is no need decided to scale, and its emphasis is in explanation concrete mode of the present invention.
Figure 1A illustrates concrete mode of the present invention, and wherein purifier comprises and is used to remove the resin of not oxidized or charged pollutant and the mixed bed of ion exchange resin; Figure 1B illustrates concrete mode of the present invention, and wherein device comprises the mixed bed of other purifier bed and ion exchange resin.Device can optionally comprise deaerator so that want feed water degasification in the auto levelizer and filtrator can be depending on the circumstances or the needs of the situation charged or be hydrophilic microporous crack film.
Fig. 2 shows according to single one-pass purification process in the concrete mode of the present invention.
The test result of Fig. 3 A and 3B explanation embodiment 2.
Fig. 4 illustrates the flow path and the concrete mode of device of the present invention, and this device has one or more heat exchanger, purifier or ion exchange bed, oxidation unit, charged filtrator and deaerator.Outlet Si purifier sample collection hole can be connected with using point (for example flooding microlithography system).
The experimental result of the concrete mode of Fig. 5 A and 5B key diagram 4.
Fig. 6 illustrates the adjustment that high-purity heat exchanger that use is used reaches in the concrete mode of the present invention.
Fig. 7 A and 7B explanation are from the data of the non-limiting concrete mode of Fig. 4 A device of the present invention; Immersion fluid, resistivity of water are about 18.2 to 18.25Mohms-cm.TOC can be less than about 4ppb (part per billion).
Fig. 8 A, 8B and 8C be respectively in a concrete mode of the present invention through degasification feed water inlet pressure, extract graphic along with the time of mouth pressure and high-purity top hole pressure.
Fig. 9 is included in and is respectively in the concrete mode of ㄧ of the present invention through graphic along with the time of degasification feed water inlet pressure and high-purity top hole pressure.
Figure 10 is according to several concrete modes of the present invention, has shown in various different experiments greater than the population of 0.05 μ m and the function of time, and wherein three different particle filters are mounted in single time by in the purification process.
Embodiment
Being described as follows of exemplary concrete mode of the present invention is described.
In the impregnated lithography, the space between lens and substrate is filled with liquid, is commonly referred to steeping liq, and the typical case has refractive index greater than 1.Steeping liq should have the low optical absorption degree under operative wavelength (for example 193nm and 157nm), and can be compatible with photoresist and lens material, and is uniformly also for uncontaminated.The immersion fluid that is used for the impregnated lithography of 193nm is ultrapure water (UPW).Ultrapure water has about 1.44 refractive index, be presented at high to the operating distance of 6mm less than about 5% absorbance log, and compatible, and be the not receipts contamination type of ultrapure form with photoresist and lens.Another is that the 157nm impregnated lithography consideration person of institute is that other immersion fluid comprises
(E.I.Du Pont De Nemours and Co., Wilmington, the trade mark of DE) and PFPE (PFPE).
The liquid infiltration shadow system that declines can comprise light source, luminescent system (for example condenser), light shield and objective lens.Steeping liq is used in the system to help pattern to form pattern on semiconductor substrate.Light source can be any suitable light source, for example light source can be the mercury lamp of have 436nm (G-line) or 365nm (I-line) wavelength, has the KrF that wavelength is 248nm (KrF) excimer laser, has the argon fluoride that wavelength is 193nm (ArF) excimer laser, have the fluorine gas that wavelength is 157nm (F2) excimer laser, or other has the light source of the wavelength that is lower than about 100nm.
Steeping liq can have greater than 1, quite low optical absorption degree and can be compatible with the photoresist that imposes on the semiconductor substrate under predetermined pattern wavelength (for example 193nm).In addition, steeping liq can be chemically stable, and evenly combination is not comtaminated, does not contain bubble and heat-staple.For example, pure water can be used as steeping liq.In addition, the temperature of steeping liq can be controlled to reduce the refractive index of liquid.
In Figure 1A, the flow path of a version of device is described.Feed liquid 10, it can comprise service water, as ultrapure water, or other liquid charging, can make up to form logistics 14 with recycled liquid 12 as steeping liq from microlithography system.Logistics 14 can flow into deaerator 16 depending on the circumstances or the needs of the situation, and wherein logistics 14 is degased to enough content in feed liquid 10.Can flow into degraded unit 20 through degasification feed water 18, UV oxidation unit for example, the pollutant that wherein contains oxidizable carbon is degraded.The water of handling through UV 22 through degasification can be sent in the high-purity deaerator 24 then, and in this deaerator 24, volatility catabolite (such as but not limited to carbon dioxide) is from removing through degassed water 22 to produce through de-aired liquid 26 of handling through UV.Second or purification can utilize the deaerator of high-purity (for example low TOC, as less than 20ppb (part per billion)) and low ionic extractability (referring to the table that for example is described in deaerator herein), they can comprise several perfluor hollow fibers.In a concrete mode, high-purity deaerator 24 is the purification device.Having all or part is to flow in the purifier 28 through what remove the volatility catabolite through de-aired liquid 26.Purifier 28 have inlet with receive through de-aired liquid 26 and comprise the purified material bed with remove the degraded of not oxidized unit through degasification feed water pollutant (such pollutant is harmful to the dipping shadow program that declines), so can produce purified liquid stream 36.Purifier 28 can comprise ion exchange material, as the negative ion/cation exchange material of negative ion or mixing.Purifier 28 also can comprise material bed, and it is the zone that separates with ion exchange material in the purifier shell.In another concrete mode, as illustrated among Figure 1B, to form logistics 32, logistics 32 flows into ion exchange beds 34 (containing ion exchange material, as the negative ion/cation exchange material of negative ion or mixing) to produce purified liquid stream 36 in de-aired liquid 26 inflow purifiers 30.In a concrete mode, ion exchange material can comprise kation and anion exchange resins with from removing ionic contamination through degassed water, and UV oxidation of this water and degasification to be removing the volatility catabolite, as through de-aired liquid 26.In the purification of liquid logistics 36 from purifier outlet or ion exchange bed is fed into depending on the circumstances or the needs of the situation particle filter 40.Particle filter 40 can be removed and not be purified colloid, gel and other particulate that device 28 or 30, ion exchange bed 34 or degraded unit 20 are removed.UV oxidation processes, purifying, the logistics 42 of degasification and ion-exchange flows in the high-purity heat exchangers 44, for example contain several hollow tubes in conjunction with or be present in perfluor heat exchanger in the device.In a concrete mode, logistics 42 is fed into several perfluor hollow tubes that is arranged in high-purity heat exchanger 44.High-purity heat exchanger 44, for example, one or more is from Entegris Inc.,
Heat exchanger can transmit heat between from the deoxidation replacement fluids of cooler/heater (show, but referring to Fig. 3) and logistics 42.The temperature that heat exchanger 44 is regulated logistics 42 is to providing a water of stablizing refractive index to be used in temperature range in the impregnated microlithography system.Heat exchanger 44 have outlet with remove all or part in the interchanger through regulate temperature through degassed water.In a concrete mode, treated immersion fluid 46 is removed from interchanger.Treated immersion fluid 46 can all be directed to the use point.In another concrete mode, treated immersion fluid is divided into logistics 48 and 50.Logistics 48 is directed to the use point then, and logistics 50 via recirculation pump 52 recycle to form logistics 12.In a concrete mode, logistics 12 can mix with feed liquid 10 then.In some concrete mode, device can be used to single time current, referring to for example embodiment 2 described concrete modes, and the construction that device can be shown in Figure 1A and 1B, with the treated liquid of recycle, a part of logistics 48 is redirect in the impregnated microlithography system.
In of the present invention one concrete mode, liquid (for example water) purification system or device comprise whole degasification, the UV oxidation, use the purification of high-purity thermoplasticity deaerator, silica is removed, ion-exchange purification, about 0.03 micron or less filtration, and use the water of the low TOC (total oxidizable carbon) of automatic heat-exchanger discharging to carry out adjustment, so providing less than about 0.01 ℃ temperature control and keeping glassware for drinking water has resistance coefficient greater than about 18.2Mohms-cm.Depending on the circumstances or the needs of the situation, device can further comprise and is used for measuring through dissolved gas (for example oxygen), pH, TOC, the inductor of resistance coefficient or their combination.
In a concrete mode, ion-exchange purification comprises one or more ion exchange bed.Ion exchange bed can comprise the exchange resin of mixed bed, as the potpourri of kation and anion exchange resins, as has the kation of 1:1: the exchange resin of negative ion ratio.In another concrete mode, ion exchange bed comprises cation exchange bed or anion exchange bed.In a concrete mode, the size of bed is about 2 cun diameter and about 24 cun length.Can use other size, and can be based on the program flow rate, the pressure drop demand, and the impurity content of feed water is done selection.In some version of this device, it is identical or different that anion exchange resins in ion exchange bed and the anion-exchange material in purifier can be, and can select relative quantity to be used for the composition of specific inflow feed liquid (for example feed water).Purifier or ion exchange material also can comprise the carbon removal material or remove the resin of TOC and ion simultaneously, for example be the ORGANEX from Millipore Corporation
TMResin, or other similar material.In some version of the present invention, silica purifier (Si purifier) (silica be the degraded of not oxidized unit and to the decline example of the harmful pollutant of shadow program of dipping) can provide one deck purified material in the ion exchange bed upstream.This purified material can be identical or different shell or other suitable configuration.
Oxidation or degraded unit can comprise one or more UV lamp, and it has the wavelength that decomposes the oxidable organic compound that the typical case finds in feed water.In some version, for example the UV lamp can be pattern SL-10A, and its crest wavelength with 185nm is greater than 30,000 microwatts. second/cm
2In some instances, the UV lamp can radiate one or more wavelength, and for example 254 and the potpourri of 185nm wavelength light.The energy of lamp or other energy source and wavelength can be done and select one or more pollutant in the degradation liquid charging (for example water).
Flow velocity with water or other steeping liq is a benchmark, and one or more low TOC discharging deaerator can be used to remove carbon dioxide, volatility catabolite, or other soluble gas from the steeping liq of UV lamp downstream part or other degraded unit.In some version, deaerator comprises perfluor microporosity film to reduce or to eliminate bubble and come from the dissolved gas in source, such as but not limited in feed liquid (for example UPW) through dissolved gas, flood the shadow scanning sequence that declines, by the gas/bubbles of UV oxidation source generation, or their combination.Can depending on the circumstances or the needs of the situation use polyolefin or other similar microporosity film to carry out from the whole degasification feed liquid of factory.Degasification can be by vacuum stripping, and inert gas gas is carried or their combination is reached.
Deaerator depending on the circumstances or the needs of the situation can be used to from remove the content of dissolved gas to ppb (part per billion) in the processed immersion fluid device.These deaerators are preferably high-purity, have in the cleaning device of low total oxidizable carbon (TOC is typically found at Celgard hollow fiber deaerator) extractability and particle outflow.These tradition, non-
Or the deaerator of non-perfluorinated material is effectively under typical flow velocity (for example greater than 75% efficient), but can have some TOC extracts, and can use in oxidation or degraded upstream, unit, as thick deaerator (
Be E.I.Du Pont De Nemours and Co., Wilmington, the trade mark of DE) deaerator.These deaerators can for example comprise plain film shape or hollow fiber microporosity film.
Or efficient and its clean design that perfluorinated material film degasification device can be greater than about 40% can make it be suitable for using after oxidation or degraded unit.These deaerators can comprise sheet or hollow fiber microporosity film.METAL EXTRACTION thing data presentation
Or the more excellent cleanliness of perfluorinated material deaerator.Referring to the Entegris that shows in the following table 1 for example, Inc's
The extraction ratio of the 10%HCl of membrane contactor (
Be Entegris, Inc, Chaska, the trade mark of MN).
Or perfluorinated material film degasification device is generally and has low total oxidizable carbon (TOC) extract and high-purity, the cleaning device of particle.In some concrete mode, deaerator helps to constitute TOC and the METAL EXTRACTION thing less than about 200ppb, and in another concrete mode, less than TOC and the METAL EXTRACTION thing of about 20ppb.
Table 1: from the extract of perfluor deaerator
"＜DL " expression is lower than the detecting value.
At immersion fluid, for example the particle in the water can be deposited on the wafer in the little shadow exposure that causes defective or projection is shade.These particles can use to filter and are removed to about 0.03 micron or littler.These particles can comprise and not dissolve silica.For example, all of 0.03 micron or littler grade
(it is for non-wetting and have very low in disposable form or do not have TOCs in fact (for example from EntegrisInc.'s for the filtrator of material
)) can be used to make handled pollution to drop to minimum and remove without dissolving and without the pollutant of degraded.This class filtrator uses non-dehumidification technology, has shown high particle retention rate: the LRV (exponentiate numerical value) of 0.03 micro particles (greater than 99.7% clearance) is for greater than 2.5 and have an extremely low extract of the content that is suitable for the impregnated method for photolithography.
In another version of the present invention, particle filter comprises film, and the PVDF filtrator of for example 0.02 micron (μ m) grade is such as but not limited to from Millipore company
Z
Be the registered trademark of Millipore company, Bedford, MA).The polyvinylidene fluoride (PVDF) of this 0.02 μ m grade is that main filtrator is quite effective for remove particle from immersion fluid (as water), and has the extract of suitable low content, and is suitable in the impregnated lithography.
Be applicable to particle filter of the present invention, for example screening and filtering device film can have the scope of scope from the positive charge to the neutral charge in desiring filter liquide.For example,
The Z filtrator is to utilize polyvinylidene fluoride (PVDF) film in playing the pleat case device.The stilt of filtrator, cage and core are polypropylene.
The surface of Z film is modified or applies and it becomes positively charged in water.Except remove particle by screening greater than 100nm,
The Z filtrator can be caught all electronegative particles in fact, comprises less than film hole person.Because most of contaminant particles in water has negative charge, so can use the positive charge film.Because
Z has clearance completely for the 20nm colloidal silica, and 2LRV or bigger, or be 3LRV or bigger in some example, filtrator can be described as the pore size of (the 0.02 μ m) grade that has 20nm.
Another example of the suitable particle filter with positive charge is the nylon filtrator, and it utilizes the nylon film in playing the pleat casket.Suitable nylon film be can be for example (Wuppertal Germany) obtains from Membrana GmbH.The stilt of filtrator, cage and core are for example high density polyethylene (HDPE).The pore rating of nylon filtrator can be about 20nm.Filtrator can have natural positive charge in water, and electronegative particle (as PSL ball and colloidal silica) is had fully or almost completely reservation.
Another suitable particle filter is the nanofilter of surface modification, Entegris for example, Inc, PartNo, S4416M117Y06.The surface-modified nano filtrator can comprise surface modification ultra-high molecular weight polyethylene film (UPE) and can be given a discount and be installed in the casket.The film that is fit to be used in the surface-modified nano filtrator is for example to be described in international monopoly notification number WO/2005072487, and title is " being used for removing from liquid the method for microbubble ", and its whole disclosure are incorporated herein and are reference.The stilt of filtrator, cage and core are for example high density polyethylene.The UPE film of modification can be in water spontaneous wetting be feature.The surface can be with neutral in water, and electronegative and positive charged particles have been produced unexpected unsized retention rate.Filtrator can be about 20nm grade.
The area that pressure drop that can be when using and flow velocity demand are selected particle filter.In some concrete mode, the area of filtrator can be at about 5000cm
2To about 15,000cm
2Scope.In other concrete mode, the area of filtrator can be at about 7000cm
2To about 11,000cm
2Scope.The pore size grade of spendable filter membrane has comprised that screening space grade is about 30nm or less, about 25nm or less, or about 20nm or less.
Spendable filter membrane can have fully or silica particle almost completely (this silica particle is for example for having about 30nm or less, less or about 20nm of about 25nm or less electronegative silica particle) retention rate, and cover or surpass about 20 layers of person for height to the silica particle of about 20 individual layers and have about 3LRV or more numerical value.The filter membrane of particle filter and casket can have following one or the characteristic of any combination under about 3 liters/minute flow rate of liquid and about 20 ℃ of water temperatures in device or system: at about 200 minutes or still less, about 70 minutes or still less and about in some cases 60 minutes or still less in be less than time of the TOC of about 10ppb; Reach the time of about 18.2mega-ohm resistance coefficient: about 690 minutes or still less, about 470 minutes or still less, about 315 minutes or still less; Reach the time of particle specification: about 200 minutes or still less, about 150 minutes or still less, about 65 minutes or still less; From system or the device particle concentration of exit after about 4 hours: about 450 particles/liter or still less, every liter of about 300 particle or still less, every liter of about 230 particle or still less; And at the silica clearance of the detecting restriction that is lower than about 2ppb portal monitoring or about 1ppb portal monitoring.
In a concrete mode, particle filter is to operate at the last location that liquid is sent to before using point.In a concrete mode, for particle filter (for example filter membrane and filter housing) and Yan Buhui to discharge any pollutant of not desiring be very important.
Organic contaminant in UPW or steeping liq is not desired, because they can absorb the DUV energy and cause defective from stepper.These organic contaminants also may be deposited on the lens, cause mist and lens performance to be degenerated.Use UV oxidation-ion-exchange process, can will be reduced to ppt content from typical ppb content from the organism in the UPW of the wafer factory feed water (for example TOC).By most of organic molecule is resolved into CO
2And H
2O, can be used to reduce TOC to ppt (part per trillion) content (in some cases, other contain carboxylate or other charged group through oxidation of organic compounds can be by ion-exchange but not the degasification mode produce and remove).Degasification for example is illustrated among Figure 1A and 1B and in the concrete mode of Fig. 3.In these concrete modes, deaerator and extra purifier are placed between UV oxidation unit and the ion-exchange unit.
The exchange of particles unit can use together in company with the purification device, to remove CO
2It is to influence by oxidation or degraded unit and purifier both flow (viscous flow time) that TOC reduces.Low TOC liquid (for example low TOC water) also can use the system component of cleaning in advance with reduction leachable and TOC to reach.For example can utilize the processing of UPW washing, the hot water wash of using UPW or extraction or other similar installation assembly to reach the remaining TOC of reduction.Sustainable cleaning is until inlet TOC meets to come the outlet TOC of self-cleaning.
When high-load inflow TOC existed, the separation bed that removes carbon elimination can be merged in the flow path of device.For example, can use and remove TOC and ion, for example ORGANEX
TMBoth resins of resin (from Millipore company) or other analog material.
Removing ion from UPW is documented in the international technology map of semiconductor (ITRS) governing principle to ppt content.In a version of device and method of the present invention, can use the mixed bed ion-exchange unit effectively in POU, to make the UPW deionization to ppt content.Elements etc. and mixed-bed ion exchanger can be made into and meet the ITRS governing principle, and do not add any ionic impurity.In a concrete mode of the present invention, device can pass through the purifier resin, and TOC ' s and/or TO are removed in ion-exchange (for example hybrid ionic exchange) and/or degasification
x(for example sulphur, nitrogen, halogen, organic phosphorus compound).
Make the immersion fluid degasification from fluid, to remove through dissolved gas or to remove the variation that the volatility oxidative breakdown product can cause fluid temperature (F.T.).Can use the high-purity deaerator, for example
II (Entegris, Inc).For example, the vacuum stripping behind the UV oxidation unit can reduce water temperature because of evaporative cooled.Decline for shadow uses for dipping, the consistance of keeping for refractive index of liquid (for example water) temperature is very important.In a version of the present invention, the heat exchanger that can use high-purity, low TOC to produce, and from about 15 ℃ in about 30 ℃ of scopes (or be under approximately its maximal value in the refractive index of fluid), the temperature of regulating immersion fluid is to set point temperatures, and keeps it at exchanger outlet or use on the point and to be about ± 0.01 ℃ or still less.
Appropriate water temperature is avoided little image defective by eliminating the refractive index change.In order to reduce the change of the refractive index that produces by temperature change in the immersion fluid, reach to avoiding pollution owing to organic ion, the perfluor heat exchanger can be used to keep the temperature of immersion fluid the predetermined temperature range less than ± 0.1 ℃ of pact, person as shown in Figure 6.In some concrete mode, can use heat exchanger to keep the temperature of immersion fluid at predetermined temperature range less than about ± 0.002 ℃.In some concrete mode, can be approximately ± 0.001 ℃ or 1mK or still less from device or the variation in the immersion fluid of distribution point.
Concrete mode at the device and method that is used for making high-purity immersion fluid (as water), feed fluid part (feed water for example, as through degasification feed water or treated water) can be used as the heater/cooler (refrigeratory 342 of Fig. 4 for example, as the Neslab refrigeratory) replacement fluids with adjustment automatic heat-exchanger (one or more heat exchanger, heat exchanger 336 and 338 as shown in Figure 4, for example from Entegris, Inc's
X) outlet is sent to the liquid of impregnated microlithography system.Although the exchange of heater/cooler or working fluid can recycle in closed path, the control of the amount of dissolved gas can be covered (or its combination) replacement fluids by further degasification, inert gas purge in exchange or working fluid.In addition, nitrogen or other inert gas purge can be used to thermoplasticity conduit and/or the infiltration and the diffusion that reduce or eliminate atmospheric gas of heat exchanger hollow tube by device.Spendable covering or purge gas are included in has low solubility in the immersion fluid, have low-permeability and diffusivity in the hot plastomer of device, and be chemical compatible to immersion fluid.This class inert gas purge can be used to keep the high resistivity of product immersion fluid and atmospheric gas (for example carbon dioxide and oxygen) is got rid of from immersion fluid.In some concrete mode, the amount through dissolved gas in treat liquid is the saturating capacity that is lower than gas in the liquid, is less than about 8ppm for the oxygen in the steeping liq (as water) for example.In other concrete mode, in treat liquid through the amount of dissolved gas for being lower than about 1000ppb (part per billion), in some concrete mode, less than about 20ppb, and in another concrete mode, for less than about 20ppb.
During changed, the refrigeratory in the device is filling liquid (as water) manually more of the present invention, this liquid when initial operative installations produce and can indicate automatically from system, to fill in device operating period such as liquid level sensor then.Simultaneously, can there be nitrogen or other inert gas bubbler to keep nitrogen or layer of inert constantly on the replacement fluids of interchanger.
" treated liquid " is meant the liquid that degased device, oxidation unit, deaerator (for example purification device), purifier, ion exchange bed (for example hybrid ionic exchange bed), filtrator and heat exchanger are regulated.Treated liquid can be to have refractive index and is higher than 1 immersion fluid.
Purifier can be combination material bed that is used for removing from liquid particulate, colloid, molecular contaminants or these pollutants, wherein these pollutants are characterised in that they can reduce impregnated lithography productive rate and/or produce residue on substrate, and these pollutants can not or possibly can't be removed by other element of system (for example ion-exchanger, oxidation unit, filtering membrane or deaerator).When reference silica and silica purifier, the invention is not restricted to the device that removes silica and have the silica purifier.Can be including, but not limited to siliceous pollutant, boracic pollutant and carbon based pollutants by implementing other pollutant that the present invention removed.Being suitable for purifier of the present invention can have and be used to remove the material bed of these pollutants.The position of purifier is not limited to the deaerator downstream and can be depending in some version that desire is utilized pollutant that purifier removes and to the influence of system downstream assembly and fixed for example being placed in before deaerator or the oxidation unit.
In some concrete mode, treated liquid can be used in the impregnated lithography and is dropped then.In other concrete mode, treated liquid can from lens, remove and in addition processed or recycle removing any extract from substrate, and then utilize.In this example, liquid can be imported in the system in various differences (for example inlet of the feed liquid shown in Figure 1A 10) or other point (for example before purifier or deaerator) once again.
In some version, can use the subordinate phase heat exchanger system, it can be " clarifier " of adjusting from the end temperature of the liquid (for example water) of device (for example the device of Figure 1A at this place, uses point near wafer or other substrate).
Can in system, use the FLOW CONTROL pattern to keep height repeatability and stable flow velocity by the irradiation zone of microlithography system.Can select flow velocity according to the certain lenses structure, make bubble be minimized or elimination when filling.Moreover, can select flow velocity to avoid or to eliminate pollutant on the substrate, this pollutant can leave lens to be incorporated in the treated liquid.Can select flow velocity to keep from the pollutant on the substrate or extract in the boundary layer of treated liquid.For example, device can accurately/repeatedly transmit stable UPW and flow to the irradiation zone, touches during filling on the substrate or on the lens to avoid bubble.The degree of accuracy of flow system can be about 5% full scale or less, in some concrete mode, is about 2% full scale or less.The removable photoresist reaction product of water filling rate on the crystal column surface landform, water-soluble resistance agent composition, and the heat that generates between exposure period make through the temperature of steeping liq and refractive index in the processing procedure restriction.In some version, desired flow rates control be under stable state about 0.4 to about 1L/min.Slower flow velocity can guarantee to finish filling under lens when initial the filling.So can continue scan period faster flow velocity to guarantee removing and the globality of meniscus of during stepping is moved accessory substance.In some concrete mode, can use high to the full-scale water of about 3L/min or other dipping flow velocity.
Some concrete mode of the apparatus and method of treat liquid (for example water) is that transmission has low total oxidizable carbon concentration, particle concentration reaches the steeping liq that floods the dissolved oxygen content of the shadow that declines in 193nm (and being 65nm in some concrete mode) down.
Reduced in the concrete mode of apparatus and method of the present invention total oxidizable carbon from factory or wafer factory feed water or other inlet UPW source (for example embodiment 5 described persons) reach high to about 80% and dissolved oxygen reach about 95%.
Can get water treatment system now and make spent ion exchange resin make the service water deionization, but this mode can not produce the dipping low silica content that shadow desires that declines so that produce higher degree water.
Special purification process, for example similar charged contaminants is removed or removed in addition to the method for type of service I strong alkali ion exchange resin, giant molecule resin, charged microporosity membrane filtration, hyperfiltration or above-mentioned combination removing silica, boron or their combination, or individually from steeping liq (as water) as purifier.
Type i ion exchange resin can be removed reactive silica effectively.Giant molecule, charged microporosity and hyperfiltration method can be removed non-reacted and colloidal silica effectively.In some concrete mode, attainable silica content is less than about 350ppt in some version for being lower than about 500ppt, is less than about 50ppt in other version.In version of the present invention, remove efficient system unexpectedly along with the increase of the flow velocity by purifier increases through the dissolving silica.Can select the flow velocity of the immersion fluid by purifier to make the channel effect drop to minimum and wafer is provided or other immersion fluid and resin between excellent contact.The purifier resin for example is a strong basic anion-exchange resin, can use the steeping liq (for example UPW water) that contains low TOC and low ion to clean to reduce from the TOC of resin to being less than about 5ppb less than about 20ppb and in some example.In some version, continue to clean until do not add extra TOC to the UPW that flows into.
In some concrete mode, can use strong alkali anion exchange media (type i) to remove the silica of dissolving.For example, but type of service I strong alkali ion exchange resin.Main resin manufacture merchant provides the resin of this type, ResinTech for example, Inc., West Berlin, NJ; Dow Chemical Company, Midland, MI (Dowex for example
TMResin); Rohm and Hass Co., Philadelphia, PA; QualiChem, Inc., Salem, VA; And Bio-Rad Laboratories, Hercules, CA.Removable silica is to being less than about 50ppt less than about 350ppt and in some example.During the shadow manufacturing course that declines at dipping, import the boron pollution thing because of carelessness, in some concrete mode, purifier and device can remove boron (and adjustment from steeping liq (for example water), to make TOC be less than about 5ppb and degas) to low-down residual content, the typical case is to the low ultimate value of the following boron of about 50ppt (part per trillion), boron content is less than about 20ppt in some example, and boron content is less than about 10ppt in other example.In some example, purifier can be removed the combination (reach simultaneous temperature and regulate, TOC is less than about 5ppb and steeping liq is degassed) of dissolving silica and dissolving borohydride species and arrive less than the dissolving silica of about 50ppt with less than about 10ppt boron.A kind of particular exchange resin that can be used for the boron of the purifier in this class application is the AMBERLITE by Rohm and the manufacturing of Haas company
TMIRA-743T.In some version, the purifier resin can be identical with the anion exchange resins in the ion-exchange unit (for example ion-exchange unit of mixed bed).
Ion exchange bed (MBD) performance of mixing can be come modification by changing the anion exchange resins type.For example, ResinTech MBD-10 (ResinTech, Inc., West Berlin, NJ) use ResinTechSBG1 (ResinTech, Inc.), standard factor of porosity gel type I resin, it has higher operation capacity in purification applications, in polishing was used, main negative ion load was from silica and supercarbonate.(ResinTech Inc.) uses high porosity type I gel resin to ResinTech MBD-15, and (ResinTech Inc.) has given in the water the preferable effect of chlorion at high proportion to ResinTechSBG1P.The combination that can change purifier and/or ion exchange bed is so that the steeping liq of pollutant to provide dipping to decline the shadow grade based on the feed liquid constituent to be provided.
In some concrete mode, the purifier that for example has strong Ion Exchange Medium can use about 18.2M Ω-cm water to clean to reduce any TOC.In some concrete mode, purifier (for example silica purifier) can use tubing string with type i strong basic anion-exchange resin (about 6 "-Yue 8 " long, about 0.5 "-Yue 1 " diameter).Tubing string can use the DI water at least about 18M Ω-cm to clean to remove remaining TOC (to less than about 20ppb) and other pollutant.
Remove the water that pollutant (for example silica or boron) causes having the higher degree UPW of low silica and the impregnated lithography that can not produce " speckle (streak) " or " washmarking " on wafer can be provided.In version of the present invention, use the POU purifying of the steep water of specific anion exchange resins can reduce silica in the water and the method for photolithography of improvement can be provided.
Measuring silica in water can be via following decision: colloidal silica=total silica-dissolving silica.In order to measure the dissolving silica, common methods is to use the colourimetry of the detecting restriction of about 0.05ppb.For total silica, common methods is for using the ICP-MS (the commercially available detecting that gets limits) with about 0.05ppb detecting restriction.
The analytical technology of silica is based on the generation of the silicomolybdate compound of highly coloured in aqueous solution.Measured the solubilized silica based on the standard testing of blue silicomolybdate, but it can the measuring height polymerizable or colloidal silica and therefore be restricted to the concentration that is lower than about 100ppm.For the measurement of ppb-ppt content, can use GFAA, ICP-MS or UV-VIS spectrometer technology.
Analytical approach can comprise and being disclosed in the U.S. Patent number 5518624 that their full text is incorporated as reference.
Silica can be detected by ICP-MS.Device can use the clean and cleaning of ultra-high purity washing earlier, in some example, use has resistance coefficient greater than about 18mega-ohm and the TOC water less than about 20ppb, with the organic extract of eliminating any residue that can stay when the drying and eliminate and use the interference of measuring.Next colloidal silica can be stopped in purified water and be analyzed it.Solution can be detained a couple of days so that colloidal silica dissolving and formation reaction theory are inclined and believed the degree of stability that increase can be provided the wafer lens of impregnated microlithography system by high-purity liquid provided by the invention.For example, be believed to be helpful in size and/or the shape of keeping the water lens by high-purity liquid provided by the invention.
In some concrete mode, implementation of the present invention can provide high-purity liquid (for example high-purity water) logistics, and it has volume flow, temperature and/or the pressure of comparing down minimizing with feed liquid (for example feed water, as through the feed water of degassing).In some concrete mode, the pressure that feed liquid has, temperature and/or volume disturbance can influence pressure, temperature and/or the volume of the liquid that is sent to the impregnated microlithography system.In other concrete mode, one or more pump in device can provide pressure, temperature and/or the volume disturbance of water, is sent to pressure, temperature and/or the volume of the water of impregnated microlithography system with influence.By reducing or eliminate the disturbance of the pressure, temperature and/or the volume that are sent to the high-purity liquid in the impregnated microlithography system, can find more stable water lens and therefore improve to be little shadow result.In some concrete mode, apparatus and method can be used to provide the attenuating ratio of pressure, temperature and/or volume, and the inlet amplitude is about 1 to about 5 with the ratio of outlet amplitude.In a concrete especially mode, the attenuating ratio is about 2.
Do not lived by any particular theory limitation, the characteristic of some assembly of believing the device of describing in this article of inclining produces contribution for the attenuating of the disturbance of feed liquid (for example feed water, as through the feed water of degassing).For example, element such as hollow fiber deaerator, membrane filter, ion exchange resin bed and/or hollow tube heat exchanger can produce contribution to the reduction of the disturbance in the feed liquid.In some concrete mode, the present invention can provide the supply of the high-purity liquid (for example high-purity water) of quite stable, and does not have the working pressure control system, as the loop control pressurer system.Yet in some concrete mode, the present invention can comprise control pressurer system, for example the control pressurer system of loop.
In some example, device described herein can further comprise pressure damper devices.Pressure damper devices can reduce the pressure that is ultimately delivered to the liquid in the impregnated lithography and/or the disturbance of volume.Pressure damper devices can comprise pulse damper.The example of one suitable pulse damper is Accu-Pulse PulsationDampenser (Primary Fluid Systems, Inc; Ontario, Canada).Have the knack of this operator and can select and screen the specified pressure damping unit herein from the viewpoint of the enlightenment that comprised and based on the particular process demand.In some concrete mode, use a plurality of pressure damper devices.
Pressure damper devices can be arranged in any place of device as herein described.But the working pressure damping unit makes and weakens flow of liquid, this flow of liquid be selected from by feed liquid, contain oxidative breakdown product liquid, and the group of temperature through regulating liquid and forming in.For example, pressure damper devices can make to be used for weakening and be selected from by feed water (for example through the degasification feed water), contains the current in the feed water (for example contain oxidative breakdown product through the degasification feed water) of oxidative breakdown product and the temperature group through regulating water (for example temperature is through regulating degassed water) and being formed.In some concrete mode, one or more pressure damper devices can be used to weaken from deaerator, purifier, the flow of liquid of particle filter and/or heat exchanger.In a concrete mode, pressure damper devices can be used to weaken feed liquid, for example water.In some concrete mode, pressure damper devices can be used to weaken high-purity liquid outlet stream, for example high-purity water outlet stream.
In some concrete mode, the pressure disturbance between feed liquid (for example through the degasification feed water) inlet and high-purity liquid outlet is less than about 20kPa, for example less than about 15kPa, less than about 10kPa or less than about 5kPa.
Fig. 8 A-C be respectively in the concrete mode of pressure boost damper (for example pulse damper) for the present invention does not comprise along with the time through degasification feed water inlet pressure, pump discharge pressure and high-purity water top hole pressure graphic.Following table 2 shows the average of graphic data, maximum and standard deviation.Device is with the about 6 liters of egr modes operation of per minute.
Table 2
| Disturbance (kPa) | On average | Maximal value | Standard deviation |
| Entered the mouth/0.5 second | 3 | 25 | 3 |
| Export/0.5 second | 2 | 11 | 1 |
| Pump discharge/0.5 second | 6 | 27 | 4 |
| Entered the mouth/0.5 second | 2 | 9 | 1 |
| Export/0.5 second | 1 | 7 | 1 |
| Pump discharge/0.5 second | 3 | 15 | 2 |
Fig. 9 comprises in the concrete mode that the present invention do not comprise pressure boost damper (for example pulse damper) through graphic along with the time of degasification feed water inlet pressure and high-purity water top hole pressure.Device is with the about 6 liters of egr modes operation of per minute.
Fig. 8 A-C and 9 confirms that the present invention can provide the stable high-purity liquid of supplying, for example high-purity water in some concrete mode.Simultaneously, Fig. 8 A-C and 9 is presented in some concrete mode by implementing the disturbance that the present invention can reduce or eliminate the disturbance of feed liquid in device in fact and/or cause because of extraction.
Single silica purifier is used in the present embodiment explanation in single blue-ribbon program, the type i strong base anion resins comes to remove the result of silica from water.The result shows that single purifier confirmed to enter in the purifier charging of 0.33ppb dissolving silica and had greater than 70% dissolving silica and remove efficient.
The quantity of observing through the dissolving silica of inclining is less than 0.05ppb (detecting limit) after the purifier outlet is in 1 day and 6 days.Incline to observing when flow velocity increases and remove the efficient increase through the dissolving silica.Do not lived by any theory limit, higher flow velocity is considered to be in to have in the purifier bed and minimizes the channel effect and provide water and the good of interlaminar resin contacts.
There is not the TOC of significant amounts from Si purifier resin, to flow out.
Present embodiment provides the test result of the concrete mode of device as described in Figure 2.Fig. 2 shows single time by purification process, immersion fluid 100 in the present embodiment wherein, and the deionized water in main loop is imported in the purifier 102.Purifier 102 is the Si purifier.Purifying current 104 from purifier 102 are imported into through particle filter 105.Particle filter 105 is 0.02 micron
The Z filtrator.Current 106 are from particle filter 105 guiding corpuscular counters 108 (UDI50) after filtration.Sample is just to collect after particle counting is slack-off and stable.
Fig. 3 A shows for main loop deionized water (200), total silica content (ppb) of purifying current 104 (202) and filtered water stream 106 (204).Total silica removes efficient to be passed through to be about 60% for single time.Fig. 3 B shows for main loop deionized water (206), purifying current 104 (208) and filtered water stream 106 (210) through dissolving silica content (ppb).For the silica content of the dissolving of purifying current 104 (208) and filtered water stream 106 (210) for being lower than detecting limit (that is less than 0.05ppb).Removing efficient through the dissolving silica is greater than about 70% for single inferior passing through.
Indicating device is for remove concentration through the dissolving silica from charging at Si purifier or filter outlet place be 0.14ppb to being effectively less than 0.05ppb as a result.Type of service I strong basic anion-exchange resin prepares silica and removes casket.
The removal of some colloidal silica can be observed be 4.9ppb to 2-2.5ppb, yet,
The processing of Z filtrator (the previous use) can reduce its effect.
Presentation of results removing and the colloidal silica removal in feed water through the dissolving silica.
Embodiment 3
Present embodiment is described an experiment, wherein uses filtrator improved treatment program.Present embodiment uses the device described in Fig. 4.Family expenses ion (DI) water 300 is the mix flows 304 that are directed to pump 306 with 302 combinations of recycle current with formation.Pump 306 transmits the stream 304 of combination to deaerator 308 and 310.Be directed to UV oxidation unit 314 and 316 through degasification current 312.Gained UV-handles current 318 and is directed to then
II high-purity deaerator 320.Gained current 322 are directed to Si purifier 324 and mixed bed purifier 326 and 328 to produce purified stream 330.Purified stream 330 is directed to then
0.02 micron casket filtrator 332 of Z is to produce filtered water stream 334.Filtered water stream 334 is directed to heat exchanger 336 and 338 then.Heat exchanger 336 and 338 is to use the chilled water 340 that is provided by refrigeratory 342 (for example NESLAB refrigeratory) to supply.Logistics 344 is used to collect liquid sample.Logistics 344 can be connected to the use point.
The device of Fig. 4 is to operate under following operating conditions: the speed of pump 306 is 700rpm (by-pass valve complete opening); The speed of system's recycle is per minute about 2 gallons (GPM); System's discharge rate is about 2.5 liters an of per minute (comprising the instrument seepage).
Collect sample after device turned round 72 hours, TOC and resistance coefficient are stable.
The device of Fig. 4 confirms to remove summation through the ability of dissolving silica and be provided at 18.2 and 18.25mega ohm-cm or higher resistance coefficient under detecting limit, and the TOC shown in Fig. 5,7A and 7B is less than 4ppb.
Fig. 5 shows the total silica content that reaches for recycle current 302 (402) for family expenses deionized water (DI) 300 (400).It is in the recirculation mode about 40% that total silica is removed efficient.Total silica content for recycle current 302 is for being lower than detecting limit (that is less than 0.05ppb).Fig. 5 B show for family expenses deionized water (DI) 300 (404) and for recycle current 302 (406) through the dissolving silica content.For recycle current 302 through the dissolving silica content for being lower than detecting limit (that is, less than 0.05ppb).Removing efficient through the dissolving silica is greater than about 85%.
Fig. 6 illustrate device can holding temperature less than 0.1 ℃.Fig. 6 shows heat exchanger sleeve pipe reflux temperature 500, heat exchanger entrance temperature 502, heat exchanger outlet temperature 504 and family expenses DI water temperature 506 graphic.The target temperature is 20.5 ℃, and average family expenses DI water temperature is about 19.81 ℃, and evenly heat exchange outlet temperature is about 20.49 ℃.
The TOC of Fig. 7 A demonstration for Si purifier inlet (600) and Si purifier outlet (602) is graphic to the time.The resistance coefficient of Fig. 7 B demonstration for Si purifier inlet (604) and Si purifier outlet (606) is graphic to the time.The data of Fig. 7 A and 7B use two Sievers PPTAnalyzer to measure.
System is presented at splendidly in the continuous loop removes efficient through the dissolving silica.
Embodiment 4
Following table 3 and 4 has been summed up the UPW mass of ion that is transmitted by the immersion fluid system described in Fig. 4.The data presentation system assembly is clean and does not add ionic impurity in product water.
Table 3
In some the concrete mode with the system that removes silica or device, system has the following properties (following table 4) of the feed entrance that is used for UPW water and treated adjustment steeping liq (outlet).
Table 4
| Project | Measuring unit | Inlet | Outlet |
| Metallic ion | Ppb | <1 | <0.01 |
| Negative ion | Ppb | N/A | <0.05 |
| Total silica | Ppb | <1 | <0.5 |
| Bacterium | The Cfu/ liter | <10 | <1 |
| TOC | ppb | <3 | <1 |
| Resistance coefficient | Mohm-cm | >17.7 | 18.2 |
| Bubble/particle | Counting/ml〉0.05 micron | <10 | <0.5 |
| Dissolved oxygen | ppm | <1 | <0.1 |
| The UPW flow velocity | LPM | 3 | 3 |
| The UPW temperature range | ℃ | 20-26 | 23 |
| UPW temperature stability | ℃ | <1 | <0.5 |
| The disturbance of UPW temperature | ℃/per 5 minutes | <1 | 0.1 |
In various experiment,
The Z filtrator, nylon filtrator (deriving from Membrana GmbH) and surface-modified nanoparticles filtrator (Entegris Part No.S4416M117Y06) are installed in the device of embodiment 2 with particle filter 105 forms.Use charging flow velocity and the 10-15psi pressure of 20-40mL/min.For several characteristics, the output of monitoring system in time.Figure 10 is presented at after each filtrator is installed in the system〉the particle counting function in time of 0.05 μ m.Table 5 shows the quality of water.The nano particle filtrator of surface modification has confirmed compared with the more excellent quality of other filtrator.
Table 5: comparative filter capability
When the present invention has shown in the concrete mode of reference illustration and has illustrated, should be appreciated that have the knack of this operator can do not depart from appended claim contain carry out in the scope of the invention in form and details on change.
Claims (26)
1. device with flow path, it comprises:
Entry conductor, it makes through the pressurization source of degasification feed water and is fed in this device, and this has the dissolved oxygen less than about 200ppb (part per billion) through the degasification feed water;
Oxidation unit, it has and receives this through the degasification feed water and make this all or part organic pollutant degradation in the degasification feed water become the inlet of oxidative breakdown product and this oxidation unit to have outlet; This oxidative breakdown product comprises carbon dioxide;
The high-purity deaerator, it has the inlet of the water of accepting to contain oxidative breakdown product, and this deaerator is from removing this oxidative breakdown product of all or part through the degasification feed water,
Purifier, it has the inlet that is used to receive through the degasification feed water, this purifier comprises that a kind of being used for removes the material bed of pollutant from this of degrading without this oxidation unit through the degasification feed water, this purifier further comprises ion exchange bed, this ion exchange bed is used for from removing ionic contamination through the degasification feed water, this purifier has remove this outlet through the degasification feed water from purifier
Particle filter, it is from removing particulate, colloid, gel or their combination through the degasification feed water; And
High-purity thermoplasticity heat exchanger, it has the inlet that is used to receive through the degasification feed water, this heat exchanger is used to regulate this temperature through the degasification feed water, and this heat exchanger receives through degasification feed water and the temperature of regulating this treated water to being used for flooding the temperature of shadow lens of declining by thermoplastic polymer; This heat exchanger has outlet to remove all or part temperature through putting to using through degassed water of regulating from interchanger.
2. device according to claim 1, it comprises that deaerator is in order to removal bubble from feed liquid and/or through dissolved gas.
3. device according to claim 1, wherein the temperature of this temperature through regulating water is about 20 to about 30 ℃ scope, maintains this resistance coefficient under the heating-up temperature simultaneously and equals in the time of about 20.5 ℃ about 18.2 to about 18.25mega-ohm.
4. device according to claim 1, wherein purifier comprises other bed that is used to remove ionic contamination.
5. device according to claim 1, wherein heat exchanger comprises hollow tube.
6. device according to claim 1, wherein the high-purity deaerator comprises the microporosity hollow tube.
7. device according to claim 1, the one step comprises pump, is used for recycle all or part temperature through regulating degassed water through this purifier and this high-purity heat exchanger.
8. device according to claim 1 wherein is somebody's turn to do about 17 resistance coefficients to about 18.2Mohm-cm scope when the degasification feed water has at 20.5 ℃.
9. device according to claim 1 wherein uses a little to be the liquid infiltration microlithography system.
10. device according to claim 1, wherein this purifier is the upstream of this ion exchange bed.
11. a method, it comprises:
Supply this pressurization source through the degasification feed water, this has at 25 ℃ of following resistance coefficients of about 17 to about 18.2mega-ohms through the degasification feed water, and this comprises the dissolved oxygen less than about 200ppb (part per billion) through the degasification feed water;
Make this flow into oxidation unit through the degasification feed water, this oxidation unit have receive this through degasification feed water and degraded this in the degasification feed water all or partly organic contaminant be the inlet of oxidative breakdown product; This oxidative breakdown product comprises carbon dioxide, and from this oxidation unit middle outlet remove contain oxidative breakdown product through the degasification feed water;
Make contain oxidative breakdown product this through degasification feed water contact high-purity thermoplasticity deaerator, this deaerator has and receives this that contain oxidative breakdown product and remove this oxidative breakdown product of all or part through the inlet of degasification feed water and by high-purity thermoplasticity deaerator from water
Make this through the degasification feed water stream through having the purifier bed of the material that removes not the pollutant of being degraded by this oxidation unit;
Contact with ion exchange bed from remove ionic contamination through the degasification feed water by making through the degasification feed water, this ion exchange bed removes ionic contamination from this through the degasification feed water;
This is filtered with from removing particulate through the degasification feed water, colloid, gel or their combination through the degasification feed water; And
Use high-purity thermoplasticity interchanger to regulate this temperature through the degasification feed water, this interchanger has inlet and receives through the degasification feed water, and this heat exchanger is regulated the temperature through the degasification feed water; This heat exchanger is regulated this temperature through the degasification feed water via thermoplastic polymer with contacting through the degasification replacement fluids; This regulates the temperature that is used in the dipping microlithography system through the degasification feed water; This heat exchanger have outlet with from interchanger, transmit temperature through regulate through degassed water in the dipping microlithography system.
12. method according to claim 11, wherein this purifier bed is that the position is between outlet of high-purity deaerator and ion exchange bed inlet.
13. method according to claim 11, wherein high-purity thermoplasticity heat exchanger has been regulated the temperature of having been handled by this purifying bed through the degasification feed water.
14. method according to claim 11, wherein this high-purity heat exchanger comprises perfluor thin-walled hollow tube.
15. device according to claim 1, wherein this purifier bed comprises that using 18.2M Ω water to clean to reduce a type of TOC is strong Ion Exchange Medium.
16. method according to claim 11, wherein this purifier bed comprises that using 18.2M Ω water to clean to reduce a type of TOC is strong Ion Exchange Medium.
17. device according to claim 1, it further comprises at least a pressure damper devices.
18. device according to claim 17, wherein at least a pressure damper devices comprises pulse damper.
19. device according to claim 1, wherein particle filter comprises the surface-modified nanoparticles filtrator.
20. device according to claim 19, wherein the surface-modified nanoparticles filtrator is included in the water and is neutral charged film surface and middle filtrator thereof the grade for about 20nm.
21. method according to claim 11, it further comprises the pressure that falls weak water.
22. method according to claim 21, one step comprises weakening and is selected from by through the degasification feed water, contains the pressure of the current in degasification feed water and the temperature group through regulating degassed water and forming of oxidative breakdown product.
23. method according to claim 21, the pressure that wherein weakens water comprises the pressure that uses pulse damper to weaken water.
24. method according to claim 11 is wherein filtered this and is comprised making through the degasification feed water through the degasification feed water and filter through the surface-modified nano filtrator.
25. method according to claim 24, wherein the surface-modified nano filtrator comprises film surface, and it is a grade at about 20nm for neutral charged and middle filtrator in water.
26. a dipping microlithography system, it comprises device according to claim 1 and little image system.
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| US83247206P | 2006-07-21 | 2006-07-21 | |
| US60/832,472 | 2006-07-21 | ||
| US60/931,275 | 2007-05-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220111337A1 (en) * | 2020-10-09 | 2022-04-14 | Entegris, Inc. | Filtration Membranes, Systems, and Methods for Producing Purified Water |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20220111337A1 (en) * | 2020-10-09 | 2022-04-14 | Entegris, Inc. | Filtration Membranes, Systems, and Methods for Producing Purified Water |
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