CN116375124A - Near-end ultrapure water deep purification device of photoetching machine and water supply system of photoetching machine - Google Patents

Abstract

The invention relates to the technical field of ultrapure water purification and discloses a photoetching machine near-end ultrapure water deep purification device and a photoetching machine water supply system. Once water flowing out of the water return port is accidentally reversed or bacteria, particles, organic matters, dissolved oxygen, bubbles and the like are reversely diffused, the water can be still isolated and prevented from entering the photoetching machine effectively.

Description

Near-end ultrapure water deep purification device of photoetching machine and water supply system of photoetching machine

Technical Field

The invention relates to the technical field of ultrapure water purification, in particular to a near-end ultrapure water deep purification device of a photoetching machine and a water supply system of the photoetching machine.

Background

With the development of the electronic industry and the semiconductor industry, the role of ultrapure water in the chip manufacturing process is increasingly important. The water quality requirements of ultrapure water are also becoming increasingly stringent.

The photoetching technology is to copy the designed circuit pattern onto silicon chip by utilizing the photochemical reaction characteristic of photoresist, and is one important technology in integrated circuit manufacture industry. Immersion lithography, also known as wet lithography, is an improvement over conventional dry lithography techniques in that a layer of immersion liquid is filled between the lower surface of the final projection objective and the photoresist on the wafer to increase the refractive index of the entire optical path. The immersion liquid is typically high purity water. The immersion fluid field formed by the high-purity water replaces air corresponding to the center of the traditional dry photoetching technology, and as the refractive index (1.44) of the ultrapure water is larger than that (1.00) of the air, the numerical aperture of the lens group is increased, and the smaller characteristic line width is further obtained. In integrated circuit fabrication, as feature sizes of chips are continuously reduced, requirements of immersion lithography on water quality of ultrapure water used in the production process are increasing. The presence of ions, dissolved oxygen, TOC, particulates, and bubbles in the immersion liquid can reduce the yield of integrated circuits. The introduction of liquids into the system is an essential feature of wet lithography. In the exposure process, the liquid filled between the projection objective and the silicon wafer becomes a part of the optical path, and actually plays a role of the projection objective, so that the high cleanliness is required. The International Technology Roadmap for Semiconductors (ITRS) updated the index requirements for the quality of ultra-pure water in the 2016 report, from which it can be seen that the water quality requirements for ultra-pure water have now been substantially maximized. Such ultra-pure water of extremely high water quality, extremely small contamination may also cause the water quality of ultra-pure water to fail to meet the requirements of wet lithography.

According to the requirements in the international semiconductor technology development roadmap (ITRS) 2012 edition, the chapter "improving yield" includes two subsections, "wafer environmental and pollution control" (WECC) and "identification, inspection and analysis" (CIA). Related content includes yield test structure methods, and correlation of data, determining correlation of defects caused by wafer production environment and process yield. This requires us to determine the cleaning control limits for gases, chemicals, air, precursors, and substrate surfaces, including ultrapure water. With the increasing growth of photolithography and new manufacturing technologies, the corresponding effects of pollution control are becoming increasingly important in WECC, so that the current generation of photolithography technology is more focused on Extreme Ultraviolet (EUV) technology and water pollution control.

In ultra-pure water quality of very large scale integrated circuits, the water quality index of priority is: resistivity, particulates, TOC (total organic carbon), bacteria, soluble silicon, heavy metals, DO (dissolved oxygen), etc., which greatly affect the production of semiconductor devices. In the manufacturing process of integrated circuit chips, the more ions are contained in a medium contacted with a silicon wafer, the more the influence on the yield of products is greater, and the ion concentration in ultrapure water can be characterized by resistivity. The number of particles is also an index for measuring the purity of ultrapure water, and if the cleaning water for the integrated circuit lithography process contains an impurity or particles, the thickness of the gate oxide film will be uneven, and defects will occur in the product pattern. Exposure defects may also result when the immersion liquid contains over-standard particles. Trace organic matters in ultrapure water affect the dielectric breakdown voltage performance of the gate oxide film. In ultrapure water, the bacteria have substantially the same effect as TOC, particulates, mainly because the propagation of bacteria in the system makes it a source of organics and particulates. As for dissolved oxygen in ultrapure water, it accelerates the oxidation reaction of the silicon wafer surface and thereby causes the oxide film to be formed in advance. The influence of bubbles is mainly caused by the difference in refractive index from ultrapure water. The refractive index (1.00) of the bubbles is very different from the refractive index (1.44) of the ultrapure water, so that the bubbles in the ultrapure water feed liquid of the photoetching machine are easy to cause exposure defects of the photoetching machine, and the influence on the chip manufacturing yield is very large.

Existing ultra-pure water feed solutions for lithography machines are typically produced by a remote ultra-pure water system and then supplied through a co-current feed back water LOOP (hereinafter referred to as "LOOP"). According to the existing process method, a photoetching machine and other machines with different water quality requirements commonly share a LOOP, and the requirements of other machines on the ultrapure water quality index are generally lower than those of the photoetching machine.

Currently, ultrapure water feed liquid of a lithography machine is generally produced in a far-end ultrapure water system, and then is supplied through a same-pass water supply and return LOOP (hereinafter referred to as a LOOP), and in order to keep a state meeting a severe ultrapure water quality index, the LOOP adopts an uninterrupted circulation state and simultaneously supplies water to the lithography machine and other machines. At present, the conventional technical means and process methods generally have the following three risks:

the first risk is secondary pollution of the LOOP. The LOOP can produce secondary pollution, and the secondary pollution cannot be completely avoided, and only corresponding technical measures can be adopted to delay and reduce the secondary pollution degree. Therefore, the actual water quality of the ultrapure water inlet liquid of the photoetching machine is inferior to the water quality of the water produced by the far-end ultrapure water system, and the degree of degradation of various indexes is different. However, not all indicators are at great risk of exceeding the standard after degradation. The ion elution, silicon elution and boron elution of the LOOP pipeline which is made of PVDF-HP materials are generally low. Therefore, even if LOOP secondary pollution exists, when ultrapure water is conveyed to the inlet of the photoetching machine from a remote system through LOOP, the indexes of general resistivity, silicon and boron still can meet the index requirements of the liquid inlet of the photoetching machine.

In general, after the secondary pollution of the LOOP, the main indexes of the chip manufacturing yield of the lithography machine, which are easy to have adverse effects, are bacteria, particles, TOC, dissolved oxygen and very small bubbles.

The impact index of item 1 is bacteria. The conventional process method that the far-end ultrapure water pipeline is directly supplied to the photoetching machine through the LOOP, secondary pollution caused by bacteria breeding exists in the LOOP, the ultrapure water inlet liquid of the photoetching machine has the risk of exceeding bacteria, and the chip manufacturing yield of the photoetching machine can be correspondingly influenced. Typically, the water producing bacteria of the remote ultrapure water system are standard. However, bacterial growth in the LOOP cannot be completely avoided, and in particular, bacterial growth will gradually increase as the ultra-pure water system and the life of the LOOP increase. Bacteria growth in a LOOP can only be slowed down to the greatest extent by some technical means, for example by LOOP co-pass design, by controlling the flow rate of ultrapure water in the main branch in the LOOP, by minimizing dead water areas, etc. Bacteria themselves typically have a particle size in excess of 0.2 microns, and bacterial growth corresponds to the simultaneous generation of new particles in the LOOP, so bacterial growth is typically accompanied by an increase in particle size and even an out of specification particle. Meanwhile, bacteria are also organisms, metabolites of the bacteria and decomposition products of bacterial carcasses are also mainly organic matters, and TOC (total organic carbon) is increased and even overproof risks are generated due to bacterial breeding. Conventional remote ultrapure water lines are directly fed to the process of the lithography machine via a LOOP, and bacteria will have an impact on the chip manufacturing yield of the lithography machine. Although the requirements of the water inflow index of other machine stations are not strict by the photoetching machine, if the water inflow index of other machine stations still reach the standard, and when the water inflow index of the photoetching machine is out of standard at the moment, the LOOP is shared, so that the LOOP is required to be re-sterilized and disinfected.

The influence index of item 2 is a particle. The conventional process method that the far-end ultrapure water pipeline is directly supplied to the photoetching machine through the LOOP, secondary pollution of particles exists in the LOOP, the ultrapure water inlet liquid of the photoetching machine has the risk of exceeding the standard of the particles, and the chip manufacturing yield of the photoetching machine can be correspondingly influenced. During the delivery of ultrapure water in the LOOP, a portion of the particles are deposited in the LOOP line. Particle impact in the liquid inlet of the photoetching machine comes from biological particles caused by bacterial growth on one hand, and particles deposited on the inner surface of a LOOP pipeline are re-flooded when the LOOP pipeline is impacted by external vibration and unexpected water hammer on the other hand.

The 3 rd influence index is TOC (organic matter). The conventional process method that the far-end ultrapure water pipeline is directly supplied to the photoetching machine through the LOOP, the LOOP has secondary pollution of TOC, the ultrapure water inlet liquid of the photoetching machine has the risk of exceeding TOC, and the chip manufacturing yield of the photoetching machine can be correspondingly influenced. Typically, LOOP lines will be selected from clear-PVC or PVDF-HP materials with lower TOC dissolution rates. Therefore, the primary source of TOC secondary pollution is typically bacterial growth, rather than TOC leaching from LOOP lines.

The second risk of the conventional technical means and process methods at present is that the ultra-pure water feed index recovery time of the lithography machine is too long after maintenance. When the far-end ultrapure water system is subjected to time repair and maintenance, the circulation state of the LOOP is interrupted, and the phenomena of particle deposition pipelines and oxygen dissolution are generated in the LOOP. If the downtime is too long and even there is a risk of bacteria breeding and TOC exceeding, if the bacteria breeding exceeds the index limit value of the ultrapure water inlet liquid of the photoetching machine, the LOOP needs to be sterilized again. After the ultrapure water system is restarted, the ultrapure water inlet index of the photoetching machine can be recovered within a certain time. The ultrapure water in the LOOP needs to be fully replaced, and after deposited particles and dissolved oxygen are circularly replaced and reduced by fresh ultrapure water, the ultrapure water inlet index of the photoetching machine can reach the standard. Before the ultrapure water inlet index of the photoetching machine reaches the standard, the ultrapure water inlet index of other machines reaches the standard.

A third risk of current conventional technical means and processes is accidental reflux and back diffusion of contaminants. If there is unexpected back flow or back diffusion of contaminants (dissolved oxygen, bubbles, bacteria, particulates, organics) on the ultrapure water LOOP return line, relatively poor water in the LOOP return line will enter the lithography machine. Accidental reflux is often transient. The back diffusion of the pollutant may be instantaneous or continuous, such as bacteria, and it has been found in practice that the reverse flow growth is induced by the reverse flow from the return line to the water supply line.

The prior art adopts a traditional technical route and adopts a mode of arranging a return pipeline on a liquid inlet water supply pipeline of the photoetching machine. No counter-diffusion to cope with fault reflux and secondary pollution indicators is considered. Contaminant bacteria, particles and organics will enter the lithography machine when the fault is reversed or back-diffused. As the related art adopts the conventional technical route, only the degassing membrane is arranged on the water supply pipeline, and no counter diffusion for coping with the indexes of fault reflux and secondary pollution is considered.

Based on the above analysis, it is theoretically conceivable to change the ultrapure water polishing system at the far end to be provided at the near end of the lithography machine. In practice, however, placing the remote ultra-pure water polishing system near the lithography machine is difficult to achieve, and several major practical factors are as follows:

a) The remote ultra-pure water polishing system takes up a large area, and the clean space near the position of the photoetching machine occupies the large polishing system, which is not reasonable economically.

b) The vibration generated by the ultra-pure water polishing system has a great influence on the normal operation of the photolithography machine and other machines in the clean room. To ensure the micro-vibration working environment of the lithography machine and other machines, it is determined that the whole polishing system is not suitable to be arranged near the lithography machine. In addition, the whole polishing system of ultrapure water is damped to meet the micro-vibration requirement, so that the cost is huge and the economy is unreasonable.

c) The single machine of the photoetching machine has small water consumption (for example, 1-10L/min), and the whole polishing system has large productivity, and the scale difference between the single machine and the polishing system can be thousands of times, even tens of thousands of times, and the scales are not matched. It is not reasonable to supply the lithography machine with ultra-pure water which is deeply treated separately by a separate large-scale polishing system.

Disclosure of Invention

The invention discloses a near-end ultrapure water deep purification device of a photoetching machine, which is used for relieving secondary pollution caused by reverse diffusion of fault reflux and secondary pollution indexes.

In order to achieve the above purpose, the present invention provides the following technical solutions:

in a first aspect, the near-end ultrapure water deep purification device of the photoetching machine comprises a water supply pipeline, a return pipeline, a first degassing component, a cross-flow micro filter and a photoetching machine liquid inlet pipeline, wherein a water outlet of the water supply pipeline is communicated with a water inlet of the first degassing component, a water outlet of the first degassing component is communicated with a water inlet of the cross-flow micro filter, a water return port of the cross-flow micro filter is communicated with a water inlet of the return pipeline, and a water penetrating port of the cross-flow micro filter is communicated with the photoetching machine liquid inlet pipeline.

In the near-end ultrapure water deep purification device of the photoetching machine, the first degassing component can effectively reduce dissolved oxygen and bubbles in the ultrapure water supplied by the water supply pipeline; the ultra-pure water enters the cross-flow micro-filter after being degassed by the first degassing component, the water inlet of the cross-flow micro-filter is directly communicated with the water return port without a filter element, water between the water inlet and the water return port is in a flowing state, a filter element is arranged between a water permeation port and a path between the water inlet and the water return port, water between the water inlet and the water return port enters the water permeation port after passing through the filter element, the filter element filters solid matters such as bacteria, particles and organic matters in the flowing ultra-pure water, whether the photoetching machine is in an ultra-pure water liquid inlet state or not, ultra-pure water from the water inlet to the water return port is in a flowing state, the risk of bacterial breeding is reduced, the filter element is not easy to be blocked, meanwhile, trapped bacteria, particles, part of organic matters are reprocessed along with the water return water, once the water flowing out of the water return port is accidentally reflux or the bacteria, the particles, the organic matters and the like are reversely diffused, and the filter element can still keep the water to effectively prevent the water from entering the photoetching machine. By adopting the cross-flow type design instead of the dead-end filtering type design, the aggregation of bacteria, particles and organic matters on the surface of the filter element can be effectively reduced, the risk of exceeding standard is reduced, and the service life of the filter element is prolonged.

Optionally, the lithography machine near-end ultrapure water deep purification device further comprises a second degassing component, and the second degassing component is connected between the water inlet of the return pipeline and the water return port of the cross-flow micro filter.

Optionally, the lithography machine proximal ultrapure water deep purification device further comprises a damping device, and the first degassing component, the second degassing component and the cross-flow micro filter are arranged on the damping device.

Optionally, the lithography machine near-end ultrapure water deep purification device further comprises a nitrogen supply pipeline, and the nitrogen supply pipeline is communicated with the air inlet of the first degassing component and/or the air inlet of the second degassing component.

Optionally, the deep purifying device for the ultrapure water at the near end of the photoetching machine further comprises a vacuum pump, and an air inlet of the vacuum pump is communicated with the air extraction opening of the first degassing component and/or the air extraction opening of the second degassing component.

Optionally, the cross-flow micro-filter is a cross-flow micro-ultrafiltration or a cross-flow micro-microfiltration.

Optionally, the filtration accuracy of the cross-flow micro-filtration is 0.02 to 0.04 microns.

Optionally, a bypass valve is connected between the water outlet of the water supply pipeline and the water inlet of the return pipeline.

Optionally, the water supply line, a line between the water supply line and the first degasification assembly, and the bypass valve are in communication via a first tee; the return line, the line between the first degasification assembly and the water supply line, and the bypass valve are communicated through a second tee; wherein the bypass valve is in direct contact with the first tee and the second tee, respectively.

In a second aspect, there is provided a water supply system for a lithographic apparatus, the water supply system comprising: the device comprises a far-end ultrapure water pipeline and the near-end ultrapure water deep purification device of the lithography machine, wherein the far-end ultrapure water pipeline comprises a LOOP ultrapure water supply pipeline and a LOOP ultrapure water return pipeline, the LOOP ultrapure water supply pipeline is communicated with the water supply pipeline, and the LOOP ultrapure water return pipeline is communicated with the return pipeline.

The ultra-pure water deep purification device at the near end of the photoetching machine is a small deep purification device arranged at the near end of the photoetching machine. The ultra-pure water deep purification is carried out on the basis of utilizing the far-end ultra-pure water pipeline, and the far-end ultra-pure water system is not canceled, so that secondary pollution indexes in LOOP, which are easy to produce adverse effects on a photoetching machine, can be dealt with, and the chip manufacturing yield of the photoetching machine can be guaranteed and improved. The rest effects refer to the technical proposal of the near-end ultrapure water deep purification device of the photoetching machine.

Drawings

FIG. 1 is a schematic view of a deep purifying apparatus for ultrapure water at the proximal end of a lithography machine according to an embodiment of the present application.

Detailed Description

The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. A and/or B represent A, B, and A and B represent three schemes.

Referring to FIG. 1, the deep purifying device for ultrapure water at the near end of a lithography machine provided by the embodiment of the application comprises a water supply pipeline L1, a return pipeline L2, a first degassing component 1, a cross-flow micro filter 2 and a lithography machine liquid inlet pipeline L4, wherein a water outlet of the water supply pipeline L1 is communicated with a water inlet of the first degassing component 1, a water outlet of the first degassing component 1 is communicated with a water inlet of the cross-flow micro filter 2, a water return port of the cross-flow micro filter 2 is communicated with a water inlet of the return pipeline L2, and a water penetrating port of the cross-flow micro filter 2 is communicated with the lithography machine liquid inlet pipeline L4. The first degassing module 1 may employ a micro degassing membrane. The upper stream of the first degassing component 1 is provided with a degassing water inlet valve V1, the air extracting opening of the first degassing component 1 is respectively provided with an air path valve V7 and an air path valve V8, and the vacuum pipeline L3 is communicated with the air path valve V7 and the air path valve V8 for vacuumizing, so that dissolved oxygen and bubbles generated by LOOP secondary pollution are effectively reduced. The first degassing module 1 may be selected from molded products such as micro degassing membrane elements of MM1x5.5 type and MM1.7x5.5 type from 3M company, such as micro degassing membrane elements of type 1x3, type 1x5.5, type 2x6, type 2x7, type 2.5x8 and type 4x13 from Kebaite company.

In the near-end ultrapure water deep purification device of the photoetching machine, the first degassing component 1 can effectively reduce dissolved oxygen and bubbles in the ultrapure water supplied by the water supply pipeline L1; the ultra-pure water enters the cross-flow micro filter 2 after being degassed by the first degassing component 1, the water inlet P1 to the water return port P2 of the cross-flow micro filter 2 are directly communicated without a filter element, water between the two is in a flowing state, a filter element is arranged between a path between the water inlet P3 and the water inlet P1 and the water return port P2, water between the water inlet P1 and the water return port P2 enters the water inlet P3 after passing through the filter element, the filter element filters solid matters such as bacteria, particles and organic matters in the flowing ultra-pure water, and the ultra-pure water from the water inlet P1 to the water return port P2 is in a flowing state no matter whether the photoetching machine is in an ultra-pure water inlet state or not, so that the bacteria breeding risk is reduced, the filter element is not easy to block, meanwhile, the trapped bacteria, particles and part of organic matters are reprocessed along with the water flowing out of the water return port P2 are in reverse flow or bacteria, particles, organic matters and the like are separated, and the filter element can still effectively prevent the ultra-pure water from entering the photoetching machine once the water flowing out of the water. By adopting the cross-flow type design instead of the dead-end filtering type design, the aggregation of bacteria, particles and organic matters on the surface of the filter element can be effectively reduced, the risk of exceeding standard is reduced, and the service life of the filter element is prolonged.

Secondary pollution also has the following indicators, namely dissolved oxygen and bubbles.

The conventional process method that the far-end ultrapure water pipeline is directly supplied to the photoetching machine through the LOOP has secondary pollution of dissolved oxygen in the LOOP, the ultrapure water inlet liquid of the photoetching machine has the risk of exceeding the standard of the dissolved oxygen, and the chip manufacturing yield of the photoetching machine can be correspondingly influenced. In practice, we will find that even though the ultra-pure water polishing system has treated the dissolved oxygen index to extremely severe 1ppb, the dissolved oxygen at the water spot for the machine is much elevated and even out of standard without any water leakage at the loop. This illustrates that dissolved oxygen dissolution in LOOP is an extremely difficult process to control. Even if the LOOP is watertight, the oxygen in the air diffuses through the LOOP pipe connection in an extremely small amount of contact, and in the case where the dissolved oxygen index is already extremely low, the resulting rise in dissolved oxygen is at trace level (ppb level), but is significant in value, possibly several times or even higher worsening with respect to the far-end ultrapure aquatic water.

Conventional remote ultrapure water pipelines are directly supplied to the process method of the photoetching machine through a LOOP, bubbles possibly exist in the LOOP, and the chip manufacturing yield of the photoetching machine can be correspondingly affected. Some of the bubbles adhere to the LOOP and are released into the water again during vibration. Bubbles in ultrapure water may be on the order of micrometers or millimeters. The refractive index of the bubbles is greatly different from that of the ultrapure water, so that the bubbles in the ultrapure water feed liquid of the photoetching machine are easy to cause exposure defects of the photoetching machine, and the influence on the chip manufacturing yield is great.

For this purpose, in a specific embodiment, the apparatus for deep purification of ultrapure water at the proximal end of the lithography machine further comprises a second degassing assembly 3, the second degassing assembly 3 being connected between the water inlet of the return line L2 and the water return port of the cross-flow micro-filter 2. The second degassing component 3 may employ a micro degassing membrane, and reference may be made specifically to the first degassing component 1. If unexpected reflux or reverse diffusion of dissolved oxygen, bubbles and the like exists on the reflux pipe, the second degassing component 3 can effectively reduce the reflux dissolved oxygen and bubbles and effectively prevent the reflux dissolved oxygen and bubbles from reversely entering the photoetching machine. Downstream of the second degassing module 3 a degassing return valve V4, gas line valves V9, V10 and a vacuum line are provided for evacuation. The air exhaust port of the second degassing component 2 is respectively provided with an air passage valve V9 and an air passage valve V10, and is communicated with the air passage valve V9 and the air passage valve V10 by utilizing a vacuum pipeline L3 to carry out vacuum pumping.

In a specific embodiment, the lithography machine proximal ultrapure water deep purification device further comprises a shock absorption device, and the first degassing component 1, the second degassing component 3 and the cross-flow micro filter 2 are arranged on the shock absorption device. Particle fluctuation in ultrapure water can be slowed down, and bubble generation is slowed down. Reduces the influence on the photoetching machine and meets the microseismic requirement.

When the water consumption changes, the number of the first degassing component 1, the second degassing component 3 and the cross-flow micro-filter 2 can be correspondingly increased or decreased.

In a specific embodiment, the ultrapure water deep purification device at the near end of the photoetching machine further comprises a nitrogen supply pipeline, and the nitrogen supply pipeline is communicated with the air inlet of the first degassing component 1 (the air suction opening of the nitrogen supply pipeline can be directly utilized as the air inlet) and/or the air inlet of the second degassing component 3 (the air suction opening of the nitrogen supply pipeline can be directly utilized as the air inlet). So as to supplement nitrogen to the ultrapure water, fully utilize the pumping openings of the first degassing component 1 and the second degassing component 3 to supplement nitrogen, and simplify the device.

In a specific embodiment, the device for deeply purifying ultrapure water at the near end of the photoetching machine further comprises a vacuum pump, and the air inlet of the vacuum pump is communicated with the air suction opening of the first degassing component 1 and/or the air suction opening of the second degassing component 3. So as to flexibly carry out the vacuumizing operation in the occasion without vacuumizing conditions.

In a specific embodiment, the cross-flow micro-filter 2 is a cross-flow micro-ultrafiltration or a cross-flow micro-microfiltration. The cross-flow micro ultrafiltration precision adopts 10000 molecular weight, which can achieve good interception effect on bacteria and particles (bacterial particles are usually larger than 0.2 um). Cross-flow micro-ultrafiltration can be selected from the group consisting of shaped products such as FLT-1026 micro-ultrafiltration membrane elements from ASAHI corporation.

Bacteria, particles, organic matters and the like can be trapped by the cross-flow type micro-filtration, when the filtration precision of the cross-flow type micro-filtration is 0.02-0.04 microns, the trapping effect is obvious, meanwhile, the water resistance cannot be increased, and the filtration precision of the cross-flow type micro-filtration can be specifically 0.02 microns, 0.03 microns or 0.04 microns.

A filter water inlet valve V2 is arranged between the first degassing component 1 and a water inlet P1 of the cross-flow micro-filter 2, a filter reflux valve V3 is arranged between a water return port P2 of the cross-flow micro-filter 2 and the second degassing component 3, and a photoetching machine liquid inlet valve V6 is arranged on a photoetching machine liquid inlet pipeline L4.

In a specific embodiment, a bypass valve V5 is connected between the water outlet of the water supply line L1 and the water inlet of the return line L2. When the device works normally, the bypass valves V5 and V1 to V10 are closed, and the valves except the bypass valve V5 are opened so as to purify the ultrapure water deeply, and the purified ultrapure water enters the photoetching machine through the liquid inlet pipeline L4 of the photoetching machine. When maintenance of the apparatus is required, the bypass valve V5 is opened to close at least the deaeration water inlet valve V1 and the deaeration reflux valve V4, and a short circuit is performed between the deaeration water inlet valve V1 and the deaeration reflux valve V4, so that the apparatus stops purifying the ultrapure water.

In a specific embodiment, the water supply line L1, the line between the water supply line L1 and the first degassing assembly 1, and the bypass valve V5 are in communication via a first tee; the return line L2, the lines between the first degassing component 1 and the water supply line L1, and the bypass valve V5 are communicated through a second tee joint; wherein the bypass valve V5 is in direct contact with the first tee and the second tee, respectively. The bypass valve V5 adopts a design of minimizing dead angles of tee joints at two sides, so that the dead water quantity at two sides of the bypass valve V5 is ensured to be minimum when the bypass valve V5 is closed under a normal working state, and bacterial pollution is reduced.

Above, fully consider the reverse diffusion of effective counter-current and main secondary pollution index of fault, improve the overall reliability of lithography machine ultrapure water feed ultrapure water granule and organic matter index, ultrapure water backward flow is realized through the continuous overflow of ultrapure water in cross-flow micro filter 2, and the ultrapure water realizes the continuity backward flow through micro filter 2 water route, and the setting up the return line on the water supply pipeline of lithography machine feed ultrapure water is not adopted and is realized.

Mainly aims at the index (bacteria, particles, TOC, dissolved oxygen and bubbles) which is most likely to generate risk in LOOP secondary pollution, does not consider the ion index and other indexes which are not likely to generate risk, reduces the process complexity and equipment scale of the deep purification device, and avoids unnecessary cost waste.

The near-end ultrapure water deep purification device of the photoetching machine is attached to the water demand of the photoetching machine, the scale is proper, the occupied space of the device is not large, and the occupation of the precious space of a clean area where the photoetching machine is located is reduced. For example, the ultrapure water scale of 1L/min is taken as an example, and the occupied space is 0.6m by 0.8 m.

The near-end ultrapure water deep purification device of the photoetching machine adopts a pure mechanical device, and no self control is needed. Complex operations are avoided. The device is simple in maintenance and has less maintenance workload.

Based on the same inventive concept, the embodiments of the present application also provide a water supply system of a lithography machine, the water supply system of the lithography machine includes: the far-end ultrapure water pipeline and the near-end ultrapure water deep purification device of the lithography machine of the embodiment are characterized in that the far-end ultrapure water pipeline comprises a LOOP ultrapure water pipeline and a LOOP ultrapure water return pipeline, the LOOP ultrapure water pipeline is communicated with the water pipeline L1, and the LOOP ultrapure water return pipeline is communicated with the return pipeline L2.

The ultra-pure water deep purification device at the near end of the photoetching machine is a small deep purification device arranged at the near end of the photoetching machine. The ultra-pure water deep purification is carried out on the basis of utilizing the far-end ultra-pure water pipeline, and the far-end ultra-pure water system is not canceled, so that secondary pollution indexes in LOOP, which are easy to produce adverse effects on a photoetching machine, can be dealt with, and the chip manufacturing yield of the photoetching machine can be guaranteed and improved.

When the far-end ultrapure water pipeline is debugged and maintained, the near-end ultrapure water deep purification device of the photoetching machine can greatly reduce waiting time for the ultrapure water inlet index of the photoetching machine to quickly recover to reach the standard.

On the basis of utilizing the far-end ultrapure water pipeline, a near-end ultrapure water deep purification device of the photoetching machine is arranged near the photoetching machine. The main secondary pollution index in LOOP, which is easy to produce bad influence on the photoetching machine, is effectively reduced, so as to ensure and improve the manufacturing yield of the photoetching machine chip.

It will be apparent to those skilled in the art that various modifications and variations can be made to the embodiments of the present invention without departing from the spirit and scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.

Claims (10)

1. The near-end ultrapure water deep purification device of the photoetching machine is characterized by comprising a water supply pipeline, a return pipeline, a first degassing component, a cross-flow type micro filter and a photoetching machine liquid inlet pipeline, wherein a water outlet of the water supply pipeline is communicated with a water inlet of the first degassing component, a water outlet of the first degassing component is communicated with a water inlet of the cross-flow type micro filter, a water return port of the cross-flow type micro filter is communicated with the water inlet of the return pipeline, and a water penetrating port of the cross-flow type micro filter is communicated with the photoetching machine liquid inlet pipeline.

2. The apparatus according to claim 1, further comprising a second degasification assembly connected between the water inlet of the return line and the water return port of the cross-flow micro filter.

3. The apparatus according to claim 2, wherein the apparatus further comprises a shock absorber, and the first degasification assembly, the second degasification assembly and the cross-flow micro-filter are disposed on the shock absorber.

4. The apparatus according to claim 2, further comprising a nitrogen supply line in communication with the inlet of the first degasification assembly and/or the inlet of the second degasification assembly.

5. The apparatus according to claim 2, wherein the apparatus further comprises a vacuum pump, and an air inlet of the vacuum pump is in communication with the air extraction opening of the first degasification assembly and/or the air extraction opening of the second degasification assembly.

6. The lithography machine proximal ultrapure water depth purification device of claim 1, wherein the cross-flow micro-filter is a cross-flow micro-ultrafiltration or a cross-flow micro-microfiltration.

7. The apparatus of claim 6, wherein the cross-flow micro-filtration has a filtration accuracy of 0.02 to 0.04. Mu.m.

8. The apparatus according to claim 1, wherein a bypass valve is connected between the water outlet of the water supply line and the water inlet of the return line.

9. The apparatus according to claim 8, wherein the water supply line, the line between the water supply line and the first degasification assembly, and the bypass valve are connected by a first tee;

the return line, the line between the first degasification assembly and the water supply line, and the bypass valve are communicated through a second tee;

wherein the bypass valve is in direct contact with the first tee and the second tee, respectively.

10. A water supply system for a lithographic apparatus, comprising: a distal ultrapure water line and a proximal ultrapure water depth purification device of a lithography machine according to any one of claims 1 to 9, the distal ultrapure water line comprising a LOOP ultrapure water supply line and a LOOP ultrapure water return line, the LOOP ultrapure water supply line being in communication with the supply line, the LOOP ultrapure water return line being in communication with the return line.

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