CN101510563B - Flexible thin-film transistor and preparation method thereof - Google Patents
Flexible thin-film transistor and preparation method thereof Download PDFInfo
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- CN101510563B CN101510563B CN 200910081136 CN200910081136A CN101510563B CN 101510563 B CN101510563 B CN 101510563B CN 200910081136 CN200910081136 CN 200910081136 CN 200910081136 A CN200910081136 A CN 200910081136A CN 101510563 B CN101510563 B CN 101510563B
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- Thin Film Transistor (AREA)
Abstract
The invention discloses a structure of a flexible thin-film transistor and a preparation method thereof; the flexible thin-film transistor not only comprises a substrate, an isolation layer, a grid, a grid insulation layer, a source electrode and a drain electrode, but also comprises a protection layer formed on the isolation layer; and the protection layer is made from a material which dissolves in a solvent different from the solvent in which the isolation layer dissolves, thus preventing the isolation layer from being damaged by acids, alkalis and organic solvents in the following-up processes.
Description
Technical field
The present invention relates to structure and the preparation method of a kind of flexible thin-film transistor (TFT, Thin Film Transistor).
Background technology
Flexible Display Technique makes the design of display device no longer be confined to complanation, and provides polynary profile and design, and frivolous, impact-resistant characteristic then is applicable to the portable products such as mobile phone, PDA or notebook computer.The soft deformability and not fragile of this class display spare can be installed in curved surface, can make e-newspaper that people dream of, wall TV, wearable display, incisively and vividly show the organic semi-conductor glamour.
In addition, another key factor of exploitation flexible display device is that its technique can convert Roll-to-Roll Manufacturing (scroll bar type processing procedure) to by Sheet-fedBatch Processing (in batches load formula processing procedure), means that the manufacturing cost of display device can significantly reduce.Advantage on the performance of the information updatability of the thickness similar to paper and flexibility, digital and electronic media, machinery, the advantage of manufacturing cost, flexible display device is very likely replaced present flat panel display device, obtains business opportunity in emerging market.
TFT-LCD (liquid crystal display) refers to that each the liquid crystal pixel point on the liquid crystal display all is to be driven by the thin-film transistor that is integrated in thereafter, the method of utilizing scanning is ON/OFF who shows point of control arbitrarily, thereby can accomplish that high-speed, high brightness, high-contrast ground show information.AMOLED (Active Matrix OrganicLight Emitting Diode, active organic electroluminescent display spare) can drive with TFT equally, each pixel is equipped with the thin-film transistor with switching function, and charge storage capacitance of each pixel outfit, peripheral drive circuit and array of display whole system are integrated on the same substrate.Be with the TFT structure difference of TFT-LCD, LCD adopts voltage to drive, and AMOLED adopts current drives, and its brightness is directly proportional with electric current, therefore except the addressing TFT that carries out the ON/OFF change action, also need the lower small-sized drive TFT of ON impedance that can allow enough electric currents pass through.SRAM (static random access memory) can drive with TFT equally.
The manufacturing process of TFT has multiple, comprise low temperature polycrystalline silicon (LTPS, Low Temperature PolySilicon), high temperature polysilicon (HTPS, High Temperature Poly Silicon), amorphous silicon (a-Si, Amorphous Silicon) etc.Its base material is generally glass, quartz, monocrystalline silicon, if replace with flexible substrate, then becomes flexible TFT, realizes flexible the demonstration.
In flexible TFT, substrate has very large relevance and is playing the part of very important role because of cost, display quality, product reliability and the process with device.At present, the material of flexible TFT substrate mainly contains three kinds in thin glass, plastics, sheet metal.
But no matter adopt which kind of substrate, also there are a lot of problems in flexible TFT in aspect of performance and preparation process:
(1) ultra-thin glass has the advantages such as processing temperature is high, the water oxygen barrier performance is strong, but its pliability is inadequate, has the shortcomings such as frangible, easy bending, the poor operability of processing.
(2) polymer (as: plastics) has the advantages such as pliability is good, workable, but its planarization is poor, and rat can bring defective to film layer structure, causes device failure; Air-tightness is relatively poor, and water, oxygen permeability are high, and water, oxygen are to cause rapidly aging main cause of device.The adhesive force of grid material on polyester material is relatively poor, so that the preparation difficult of display graphics, and has affected the stability of device.Between plastic-substrates and grid, be coated with at present one layer of polymeric (as: polyimides), strengthen on the one hand the adhesion of substrate and grid, stop on the other hand water oxygen to see through substrate.
(3) the metallic substrates processing temperature is high, the water oxygen barrier performance is strong, and compares with ultra-thin glass, and processing workable, but metal integral conduction and rough surface can't directly at its surface preparation electrode, need to increase insulating barrier between substrate and electrode.
At present, being used for the layer (hereinafter referred to as isolation layer) of exclusion of water oxygen between plastic-substrates and the grid can be for organic material (polyimides etc.) or inorganic molecules material, such as SiOx, SiNx etc.; The layer that is used for insulating between metallic substrates and the grid (hereinafter referred to as isolation layer) also can be organic material or inorganic material.The preparation technology of isolation layer has two schemes usually at present: utilize the wet processings such as spin coating, injection coating to prepare one deck PI (polyimides) or utilize chemical vapour deposition (CVD) (CVD at substrate surface, Chemical Vapor Deposition) method prepares the inorganic molecules material layer at substrate surface, such as SiOx, SiNx etc.But no matter be organic material or inorganic material, in the subsequent technique of device preparation such as the processes such as electrode etching, UV illumination, can be destroyed by acid, alkali or organic solvent, namely be dissolved in acid, alkali or organic solvent, thereby affect stability and the life-span of whole device.
The inventor is through concentrating on studies and repeatedly experiment, and the structure of substrate/isolation layer/grid has been done improvement: increase layer protective layer between isolation layer and grid, protective layer is selected the material that is dissolved in different solvents with isolation layer.If protective layer material is dissolved in the acid such as developer solution, the alkali of using in the technique such as subsequent electrode etching or is dissolved in organic solvent, then isolation layer not with these materials reactions, thereby normally bring into play the effect of isolation layer; If protective layer material is insoluble to acid in the subsequent technique, alkali, organic solvent etc., so just can stops these acid, alkali, organic solvent to the corrosion of isolation layer, thereby protect isolation layer.In addition, protective layer has also further improved the ability that intercepts water oxygen and has also improved simultaneously evenness, has reduced rough surface to the structural damage of device rete, improves rate of finished products.
Summary of the invention
The purpose of this invention is to provide the flexible TFT structure that a kind of isolation layer of protecting flexible thin-film transistor is not destroyed, improve the stability of flexible TFT and subsequent device, life-saving.
Purpose of the present invention can be achieved through the following technical solutions:
Flexible thin-film transistor comprises substrate, grid, gate insulator, source electrode and drain electrode, also comprises being formed on suprabasil isolation layer.Also be formed with protective layer on the described isolation layer, this protective layer is selected and the material of isolation layer material dissolves in different solvents.
Described substrate is metal, alloy or polymer.
Described isolation layer is polymer or inorganic molecules material, is preferably mixture, SiOx or the SiNx of polyimides, polytetrafluoroethylene, polyimides and polytetrafluoroethylene.
Described protective layer material is resin, more preferably epoxy resin or acryl resin, and thickness is 500nm-10um, with the method preparation of coating.
Described thin-film transistor can be used for making TFT-LCD, active organic electroluminescent device, TFT-SRAM.
By the flexible thin-film transistor structure that has increased protective layer provided by the invention, isolation layer can not be subject to the destruction of acid, alkali or organic solvent in the technical process such as subsequent electrode etching, effectively brings into play the effect of isolation layer, improves device stability.
Description of drawings
Accompanying drawing is the flexible TFT structural representation of the preferred embodiment of the invention.Wherein, description of reference numerals is as follows: the 1-flexible substrates; The 2-isolation layer; The 3-protective layer; The 4-grid; The 5-gate insulator; The 6-semiconductor; The 7-source electrode; The 8-drain electrode.
Embodiment
Elaborate content of the present invention below in conjunction with the drawings and specific embodiments, should be appreciated that the present invention is not limited to following preferred implementation, preferred implementation is only as the illustrative embodiment of inventing.
(1) flexible substrates 1 is a stainless steel substrates that 0.1mm is thick, and the thickness of flexible substrates also can be decided according to the special needs of using of TFT.Substrate after cleaning is placed baking drying in the cleaning oven.
(2) method with spin coating or injection coating prepares polyimides/polytetrafluoroethylene compound structure film as isolation layer 2 in substrate, and THICKNESS CONTROL is at 0.2～2 μ m, baking-curing.
(3) be coated with the epoxy resin of 1 μ m as protective layer 3, baking-curing at isolation layer.
(4) adopt the magnetron sputtering mode to prepare the metal M o/Al alloy of 200nm as the grid 4 of TFT at protective layer, and by the standby electrode pattern of optical graving.
(5) mode of the recycling chemical vapour deposition (CVD) SiOx that makes respectively 20nm as the Si of gate insulator 5 and 50nm as semiconductor 6, by the standby respective graphical of optical graving.
(6) adopt the magnetron sputtering mode to prepare the Mo of two 200nm respectively as source electrode 7, drain electrode 8 at semiconductor surface.
(1) flexible substrates 1 is a thick transparent polyester film of 175 μ m, and the thickness of flexible substrates also can be decided according to the special needs of using of TFT.Substrate after cleaning is placed baking drying in the cleaning oven.
(2) make the SiOx of 100nm as isolation layer 2 with the mode of chemical vapour deposition (CVD).
(3) be coated with the epoxy resin of 1 μ m as protective layer 3, baking-curing at isolation layer.
(4) adopt the magnetron sputtering mode to prepare the metal M o/Al alloy of 200nm as the grid 4 of TFT at protective layer, and by the standby electrode pattern of optical graving.
(5) mode of the recycling chemical vapour deposition (CVD) SiOx that makes 20nm as the Si of gate insulator 5 and 50nm as semiconductor 6, by the standby respective graphical of optical graving.
(6) adopt the magnetron sputtering mode to prepare the Mo of two 200nm respectively as source electrode 7, drain electrode 8 at semiconductor surface.
Although the present invention discloses as above with preferred embodiment; yet it is not to limit the present invention; anyly be familiar with this technology personage; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations; therefore, protection scope of the present invention is as the criterion when the claim with application defines.
Claims (5)
1. flexible thin-film transistor comprises:
Substrate, grid, gate insulator, source electrode and drain electrode; also comprise and be formed on suprabasil isolation layer; it is characterized in that; on described isolation layer, also be formed with protective layer; this protective layer is selected and the material of isolation layer material dissolves in different solvents; and this protective layer is insoluble to acid or alkali solvent, and above-mentioned isolation layer is mixture, SiOx or the SiNx of polyimides, polytetrafluoroethylene, polyimides and polytetrafluoroethylene, and above-mentioned protective layer is epoxy resin or acryl resin.
2. according to claim 1 flexible thin-film transistor is characterized in that, described substrate is metal, alloy or polymer.
3. according to claim 1 flexible thin-film transistor is characterized in that, the thickness of described protective layer is 500nm-10um.
4. according to claim 1 flexible thin-film transistor is characterized in that, the method preparation of described protective layer used coating.
5. according to claim 1 flexible thin-film transistor is characterized in that, described thin-film transistor can be used for making TFT-LCD, active organic electroluminescent device, TFT-SRAM.
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| CN 200910081136 CN101510563B (en) | 2009-04-03 | 2009-04-03 | Flexible thin-film transistor and preparation method thereof |
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| CN 200910081136 CN101510563B (en) | 2009-04-03 | 2009-04-03 | Flexible thin-film transistor and preparation method thereof |
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| CN101510563B true CN101510563B (en) | 2013-03-27 |
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| CN103022153A (en) * | 2012-12-27 | 2013-04-03 | 青岛龙泰天翔通信科技有限公司 | Flexible thin-film transistor |
| CN103050497A (en) * | 2012-12-27 | 2013-04-17 | 青岛龙泰天翔通信科技有限公司 | Flexible driving back plate |
| CN104698718A (en) * | 2015-03-13 | 2015-06-10 | 深圳市迪佩科技有限公司 | Flexible electronic paper display screen and display device and manufacturing method |
| CN109560085A (en) * | 2018-12-10 | 2019-04-02 | 武汉华星光电半导体显示技术有限公司 | Display panel and display module |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1753155A (en) * | 2004-09-24 | 2006-03-29 | 财团法人工业技术研究院 | Manufacturing method of plain polycrystalline silicon film transistor |
| JP2007012781A (en) * | 2005-06-29 | 2007-01-18 | Alps Electric Co Ltd | Circuit board, manufacturing method thereof, and display apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1753155A (en) * | 2004-09-24 | 2006-03-29 | 财团法人工业技术研究院 | Manufacturing method of plain polycrystalline silicon film transistor |
| JP2007012781A (en) * | 2005-06-29 | 2007-01-18 | Alps Electric Co Ltd | Circuit board, manufacturing method thereof, and display apparatus |
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