CN103022153A - Flexible thin-film transistor - Google Patents
Flexible thin-film transistor Download PDFInfo
- Publication number
- CN103022153A CN103022153A CN201210583297XA CN201210583297A CN103022153A CN 103022153 A CN103022153 A CN 103022153A CN 201210583297X A CN201210583297X A CN 201210583297XA CN 201210583297 A CN201210583297 A CN 201210583297A CN 103022153 A CN103022153 A CN 103022153A
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- China
- Prior art keywords
- film transistor
- flexible thin
- flexible
- resin bed
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Thin Film Transistor (AREA)
Abstract
The invention provides a flexible thin-film transistor. The flexible thin-film transistor comprises a flexible substrate, a resin layer formed on the flexible substrate and a flexible thin-film transistor. The flexible thin-film transistor comprises a grid, a grid insulating layer, an active layer, a source and a drain.
Description
Technical field
The present invention relates to a kind of flexible thin-film transistor.
Background technology
Along with the in recent years development of novel Display Technique, the display device of various uses emerges in large numbers gradually, flexible display device for example, and for satisfying the needs of this display device, flexible thin-film transistor is key wherein.
Therefore, seek a kind of flexible thin-film transistor and become the problem of needing solution badly.
Summary of the invention
The invention provides a kind of flexible thin-film transistor, it comprises flexible base, board, be formed on the resin bed on the flexible base, board, and be formed on the flexible thin-film transistor on this resin bed, flexible thin-film transistor comprises grid, gate insulator, active layer, source electrode and drain electrode.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used for explanation the present invention and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Embodiment 1
This flexible thin-film transistor comprises plastic base; form the resin bed of methyl acrylate material at plastic base; form successively grid, gate insulator, active layer, source electrode and drain electrode on this resin bed, wherein layers of material is flexible material, forms at last protective layer.
Embodiment 2
This flexible thin-film transistor comprises resin substrate; form the resin bed of acrylic acid 2-ethoxy ethyl ester material at resin substrate; form successively grid, gate insulator, active layer, source electrode and drain electrode on this resin bed, wherein layers of material is flexible material, forms at last protective layer.
Embodiment 3
This flexible thin-film transistor comprises the metallic film substrate; form the resin bed of ethyl acrylate material at the metallic film substrate; form successively grid, gate insulator, active layer, source electrode and drain electrode on this resin bed, wherein layers of material is flexible material, forms at last protective layer.
Claims (2)
1. flexible thin-film transistor, it comprises flexible base, board, is formed on the resin bed on the flexible base, board, and is formed on the flexible thin-film transistor on this resin bed, flexible thin-film transistor comprises grid, gate insulator, active layer, source electrode and drain electrode.
2. flexible thin-film transistor as claimed in claim 1, wherein flexible base, board is plastics, resin or metallic film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210583297XA CN103022153A (en) | 2012-12-27 | 2012-12-27 | Flexible thin-film transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210583297XA CN103022153A (en) | 2012-12-27 | 2012-12-27 | Flexible thin-film transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103022153A true CN103022153A (en) | 2013-04-03 |
Family
ID=47970517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210583297XA Pending CN103022153A (en) | 2012-12-27 | 2012-12-27 | Flexible thin-film transistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103022153A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308904A (en) * | 2008-07-16 | 2008-11-19 | 电子科技大学 | Organic thin-film transistor and manufacture method thereof |
| CN101510563A (en) * | 2009-04-03 | 2009-08-19 | 清华大学 | Flexible thin-film transistor and preparation method thereof |
| CN101989618A (en) * | 2009-08-07 | 2011-03-23 | 清华大学 | Flexible thin film transistor and preparation method thereof |
| CN102270743A (en) * | 2010-06-04 | 2011-12-07 | 国立清华大学 | Organic thin film transistor using paper substrate and silk dielectric layer and manufacturing method of organic thin film transistor |
-
2012
- 2012-12-27 CN CN201210583297XA patent/CN103022153A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101308904A (en) * | 2008-07-16 | 2008-11-19 | 电子科技大学 | Organic thin-film transistor and manufacture method thereof |
| CN101510563A (en) * | 2009-04-03 | 2009-08-19 | 清华大学 | Flexible thin-film transistor and preparation method thereof |
| CN101989618A (en) * | 2009-08-07 | 2011-03-23 | 清华大学 | Flexible thin film transistor and preparation method thereof |
| CN102270743A (en) * | 2010-06-04 | 2011-12-07 | 国立清华大学 | Organic thin film transistor using paper substrate and silk dielectric layer and manufacturing method of organic thin film transistor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130403 |