CN101510563A - Flexible thin-film transistor and preparation method thereof - Google Patents
Flexible thin-film transistor and preparation method thereof Download PDFInfo
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- CN101510563A CN101510563A CN 200910081136 CN200910081136A CN101510563A CN 101510563 A CN101510563 A CN 101510563A CN 200910081136 CN200910081136 CN 200910081136 CN 200910081136 A CN200910081136 A CN 200910081136A CN 101510563 A CN101510563 A CN 101510563A
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- film transistor
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
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- 229910052760 oxygen Inorganic materials 0.000 description 7
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- Thin Film Transistor (AREA)
Abstract
The invention discloses a structure of a flexible thin-film transistor and a preparation method thereof; the flexible thin-film transistor not only comprises a substrate, an isolation layer, a grid, a grid insulation layer, a source electrode and a drain electrode, but also comprises a protection layer formed on the isolation layer; and the protection layer is made from a material which dissolves in a solvent different from the solvent in which the isolation layer dissolves, thus preventing the isolation layer from being damaged by acids, alkalis and organic solvents in the following-up processes.
Description
Technical field
The present invention relates to structure and the preparation method of a kind of flexible thin-film transistor (TFT, Thin Film Transistor).
Background technology
Flexible Display Technique makes the design of display device no longer be confined to complanation, and provides polynary profile and design, and frivolous, impact-resistant characteristic then is applicable to portable products such as mobile phone, PDA or notebook computer.The soft deformability and not fragile of this class display spare can be installed in curved surface, can make e-newspaper that people dream of, wall TV, wearable display, incisively and vividly show the organic semi-conductor glamour.
In addition, another key factor of exploitation flexible display device is that its technology can convert Roll-to-Roll Manufacturing (scroll bar formula processing procedure) to by Sheet-fedBatch Processing (load formula processing procedure in batches), means that the manufacturing cost of display device can significantly reduce.The renewable property of the information of thickness similar to paper and flexibility, digital and electronic medium, the advantage, the advantage of manufacturing cost of machinery on performance, flexible display device is very likely replaced present flat panel display device, obtains business opportunity in emerging market.
TFT-LCD (LCD) is meant that each the liquid crystal pixel point on the LCD all is to be driven by the thin-film transistor that is integrated in thereafter, utilize the arbitrarily ON/OFF of a display dot of control of method for scanning, thereby can accomplish high-speed, high brightness, high-contrast ground display message.AMOLED (Active Matrix OrganicLight Emitting Diode, the active organic electroluminescent display device) can drive with TFT equally, each pixel is equipped with the thin-film transistor with switching function, and charge storage capacitance of each pixel outfit, peripheral drive circuit and array of display whole system are integrated on the same substrate.Be with the TFT structure difference of TFT-LCD, LCD adopts driven, and AMOLED adopts current drives, and its brightness is directly proportional with electric current, therefore except the addressing TFT that carries out the ON/OFF change action, also need the lower small-sized drive TFT of ON impedance that can allow enough electric currents pass through.SRAM (static random access memory) can drive with TFT equally.
The manufacturing process of TFT has multiple, comprises low temperature polycrystalline silicon (LTPS, Low Temperature PolySilicon), high temperature polysilicon (HTPS, High Temperature Poly Silicon), amorphous silicon (a-Si, Amorphous Silicon) etc.Its base material is generally glass, quartz, monocrystalline silicon, if replace with flexible substrate, then becomes flexible TFT, realizes flexible the demonstration.
In flexible TFT, substrate is because all have very big relevance and playing the part of very important role with device cost, display quality, product reliability and process.At present, the material of flexible TFT substrate mainly contains three kinds in thin glass, plastics, sheet metal.
But no matter adopt which kind of substrate, also there are a lot of problems in flexible TFT in aspect of performance and preparation process:
(1) ultra-thin glass has advantages such as processing temperature height, water oxygen barrier performance be strong, but its pliability is not enough, has shortcomings such as frangible, easy bending, the poor operability of processing.
(2) polymer (as: plastics) has advantages such as pliability is good, workable, but its planarization is poor, and rat can bring defective to film layer structure, causes device failure; Air-tightness is relatively poor, water, oxygen permeability height, and water, oxygen are the main causes that causes device aging rapidly.The adhesive force of grid material on polyester material is relatively poor, makes the preparation of display graphics become difficult, and has influenced the stability of device.Between plastic-substrates and grid, be coated with one layer of polymeric (as: polyimides) at present, strengthen the adhesion of substrate and grid on the one hand, stop water oxygen to see through substrate on the other hand.
(3) metallic substrates processing temperature height, water oxygen barrier performance are strong, and compare with ultra-thin glass, processing workable, but metal integral conduction and rough surface can't need increase insulating barrier directly at its surface preparation electrode between substrate and electrode.
At present, being used for the layer (to call isolation layer in the following text) of exclusion of water oxygen between plastic-substrates and the grid can be organic material (polyimides etc.) or inorganic molecules material, as SiOx, SiNx etc.; The layer that is used for insulating between metallic substrates and the grid (to call isolation layer in the following text) also can be organic material or inorganic material.At present the preparation technology of isolation layer has two kinds of schemes usually: utilize spin coating, spray wet processings such as coating at substrate surface preparation one deck PI (polyimides) or utilize chemical vapour deposition (CVD) (CVD, Chemical Vapor Deposition) method is at substrate surface preparation inorganic molecules material layer, as SiOx, SiNx etc.But no matter be organic material or inorganic material, in the subsequent technique of device preparation such as processes such as electrode etching, UV illumination, can be destroyed, promptly be dissolved in acid, alkali or organic solvent, thereby influence the stability and the life-span of entire device by acid, alkali or organic solvent.
The inventor is through concentrating on studies and experiment repeatedly, and the structure of substrate/isolation layer/grid has been done improvement: increase layer protective layer between isolation layer and grid, protective layer is selected the material that is dissolved in different solvents with isolation layer for use.If protective layer material is dissolved in acid such as developer solution, the alkali of using in the technology such as subsequent electrode etching or is dissolved in organic solvent, then isolation layer not with these materials reactions, thereby normally bring into play the effect of isolation layer; If protective layer material is insoluble to acid in the subsequent technique, alkali, organic solvent etc., so just can stop these acid, alkali, organic solvent corrosion, thereby isolation layer is lived in protection to isolation layer.In addition, protective layer has also further improved the ability that intercepts water oxygen and has also improved evenness simultaneously, has reduced rough surface to the structural damage of device rete, improves rate of finished products.
Summary of the invention
The purpose of this invention is to provide the flexible TFT structure that a kind of isolation layer of protecting flexible thin-film transistor is not destroyed, improve the stability of flexible TFT and subsequent device, life-saving.
Purpose of the present invention can be achieved through the following technical solutions:
Flexible thin-film transistor comprises substrate, grid, gate insulator, source electrode and drain electrode, also comprises being formed on suprabasil isolation layer.Also be formed with protective layer on the described isolation layer, this protective layer is selected for use and the material of isolation layer material dissolves in different solvents.
Described substrate is metal, alloy or polymer.
Described isolation layer is polymer or inorganic molecules material, is preferably mixture, SiOx or the SiNx of polyimides, polytetrafluoroethylene, polyimides and polytetrafluoroethylene.
Described protective layer material is a resin, more preferably epoxy resin or acryl resin, and thickness is 500nm-10um, with the method preparation of coating.
Described thin-film transistor can be used for making TFT-LCD, active organic electroluminescent device, TFT-SRAM.
By the flexible thin-film transistor structure that has increased protective layer provided by the invention, isolation layer can not be subjected to the destruction of acid, alkali or organic solvent in the technical process such as subsequent electrode etching, brings into play the effect of isolation layer effectively, improves device stability.
Description of drawings
Accompanying drawing is the flexible TFT structural representation of the preferred embodiment of the invention.Wherein, description of reference numerals is as follows: the 1-flexible substrates; The 2-isolation layer; The 3-protective layer; The 4-grid; The 5-gate insulator; The 6-semiconductor; The 7-source electrode; The 8-drain electrode.
Embodiment
Elaborate content of the present invention below in conjunction with the drawings and specific embodiments, should be appreciated that the present invention is not limited to following preferred implementation, preferred implementation is only as the illustrative embodiment of inventing.
Embodiment 1 provides a kind of flexible TFT:
(1) flexible substrates 1 is a stainless steel substrates that 0.1mm is thick, and the thickness of flexible substrates also can be decided according to the special needs of using of TFT.Substrate after cleaning is placed baking drying in the cleaning oven.
(2) method with spin coating or injection coating prepares polyimides/polytetrafluoroethylene compound structure film as isolation layer 2 in substrate, and THICKNESS CONTROL is at 0.2～2 μ m, baking-curing.
(3) on isolation layer, be coated with the epoxy resin of 1 μ m as protective layer 3, baking-curing.
(4) on protective layer, adopt the magnetron sputtering mode to prepare the grid 4 of the metal M o/Al alloy of 200nm as TFT, and by optical graving power backup utmost point figure.
(5) utilize again SiOx that the mode of chemical vapour deposition (CVD) makes 20nm respectively as the Si of gate insulator 5 and 50nm as semiconductor 6, prepare respective graphical by photoetching.
(6) adopt the magnetron sputtering mode to prepare the Mo of two 200nm at semiconductor surface respectively as source electrode 7, drain electrode 8.
Embodiment 2 provides a kind of flexible TFT equally:
(1) flexible substrates 1 is one the 175 thick transparent polyester film of μ m, and the thickness of flexible substrates also can be decided according to the special needs of using of TFT.Substrate after cleaning is placed baking drying in the cleaning oven.
(2) make the SiOx of 100nm as isolation layer 2 with the mode of chemical vapour deposition (CVD).
(3) on isolation layer, be coated with the epoxy resin of 1 μ m as protective layer 3, baking-curing.
(4) on protective layer, adopt the magnetron sputtering mode to prepare the grid 4 of the metal M o/Al alloy of 200nm as TFT, and by optical graving power backup utmost point figure.
(5) utilize again SiOx that the mode of chemical vapour deposition (CVD) makes 20nm as the Si of gate insulator 5 and 50nm as semiconductor 6, prepare respective graphical by photoetching.
(6) adopt the magnetron sputtering mode to prepare the Mo of two 200nm at semiconductor surface respectively as source electrode 7, drain electrode 8.
Though the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; anyly be familiar with this technology personage; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations; therefore, protection scope of the present invention is as the criterion when the claim with application defines.
Claims (9)
1, a kind of flexible thin-film transistor comprises:
Substrate, grid, gate insulator, source electrode and drain electrode also comprise being formed on suprabasil isolation layer, it is characterized in that, also are formed with protective layer on described isolation layer, and this protective layer is selected for use and the material of isolation layer material dissolves in different solvents.
According to the flexible thin-film transistor of claim 1, it is characterized in that 2, described substrate is metal, alloy or polymer.
According to the flexible thin-film transistor of claim 1, it is characterized in that 3, described isolation layer is polymer or inorganic molecules material.
According to the flexible thin-film transistor of claim 3, it is characterized in that 4, described isolation layer is mixture, the SiO of polyimides, polytetrafluoroethylene, polyimides and polytetrafluoroethylene
XOr SiN
X
According to the flexible thin-film transistor of claim 1-4, it is characterized in that 5, described protective layer is a resin.
According to the flexible thin-film transistor of claim 5, it is characterized in that 6, described protective layer is epoxy resin or acryl resin.
According to the flexible thin-film transistor of claim 1, it is characterized in that 7, the thickness of described protective layer is 500nm-10um.
8, according to the flexible thin-film transistor of claim 1, it is characterized in that the method preparation of described protective layer used coating.
According to the flexible thin-film transistor of claim 1, it is characterized in that 9, described thin-film transistor can be used for making TFT-LCD, active organic electroluminescent device, TFT-SRAM.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910081136 CN101510563B (en) | 2009-04-03 | 2009-04-03 | Flexible thin-film transistor and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910081136 CN101510563B (en) | 2009-04-03 | 2009-04-03 | Flexible thin-film transistor and preparation method thereof |
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| CN101510563A true CN101510563A (en) | 2009-08-19 |
| CN101510563B CN101510563B (en) | 2013-03-27 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022153A (en) * | 2012-12-27 | 2013-04-03 | 青岛龙泰天翔通信科技有限公司 | Flexible thin-film transistor |
| CN103050497A (en) * | 2012-12-27 | 2013-04-17 | 青岛龙泰天翔通信科技有限公司 | Flexible driving back plate |
| CN104698718A (en) * | 2015-03-13 | 2015-06-10 | 深圳市迪佩科技有限公司 | Flexible electronic paper display screen and display device and manufacturing method |
| CN109560085A (en) * | 2018-12-10 | 2019-04-02 | 武汉华星光电半导体显示技术有限公司 | Display panel and display module |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100382255C (en) * | 2004-09-24 | 2008-04-16 | 财团法人工业技术研究院 | Manufacturing method of plain polycrystalline silicon film transistor |
| JP2007012781A (en) * | 2005-06-29 | 2007-01-18 | Alps Electric Co Ltd | Circuit board, manufacturing method thereof, and display apparatus |
-
2009
- 2009-04-03 CN CN 200910081136 patent/CN101510563B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022153A (en) * | 2012-12-27 | 2013-04-03 | 青岛龙泰天翔通信科技有限公司 | Flexible thin-film transistor |
| CN103050497A (en) * | 2012-12-27 | 2013-04-17 | 青岛龙泰天翔通信科技有限公司 | Flexible driving back plate |
| CN104698718A (en) * | 2015-03-13 | 2015-06-10 | 深圳市迪佩科技有限公司 | Flexible electronic paper display screen and display device and manufacturing method |
| CN109560085A (en) * | 2018-12-10 | 2019-04-02 | 武汉华星光电半导体显示技术有限公司 | Display panel and display module |
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| Publication number | Publication date |
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| CN101510563B (en) | 2013-03-27 |
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