CN101504438B - 绝缘膜的评价方法及测量电路 - Google Patents
绝缘膜的评价方法及测量电路 Download PDFInfo
- Publication number
- CN101504438B CN101504438B CN2009100066417A CN200910006641A CN101504438B CN 101504438 B CN101504438 B CN 101504438B CN 2009100066417 A CN2009100066417 A CN 2009100066417A CN 200910006641 A CN200910006641 A CN 200910006641A CN 101504438 B CN101504438 B CN 101504438B
- Authority
- CN
- China
- Prior art keywords
- diffusion layer
- terminal
- dielectric film
- electrode
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
- G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
Claims (9)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008027250 | 2008-02-07 | ||
JP2008-027250 | 2008-02-07 | ||
JP2008027250A JP4959596B2 (ja) | 2008-02-07 | 2008-02-07 | 絶縁膜の評価方法および測定回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101504438A CN101504438A (zh) | 2009-08-12 |
CN101504438B true CN101504438B (zh) | 2013-05-29 |
Family
ID=40938371
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100066417A Expired - Fee Related CN101504438B (zh) | 2008-02-07 | 2009-02-06 | 绝缘膜的评价方法及测量电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7863922B2 (zh) |
JP (1) | JP4959596B2 (zh) |
KR (1) | KR101473018B1 (zh) |
CN (1) | CN101504438B (zh) |
TW (1) | TWI478258B (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101711477B1 (ko) * | 2010-05-11 | 2017-03-14 | 삼성전자 주식회사 | 반도체 소자의 티디디비 테스트 구조 및 이를 이용한 티디디비 테스트 방법 |
JP5817361B2 (ja) * | 2011-09-08 | 2015-11-18 | 富士電機株式会社 | 半導体素子の特性試験装置およびその装置を用いた半導体素子の特性試験方法 |
CN104851818B (zh) * | 2014-02-14 | 2017-12-22 | 中芯国际集成电路制造(上海)有限公司 | 介质层缺陷的检测方法和检测装置 |
KR102442624B1 (ko) * | 2014-11-11 | 2022-09-13 | 삼성전자주식회사 | 반도체 디바이스 |
JP2020041804A (ja) * | 2018-09-06 | 2020-03-19 | 東芝三菱電機産業システム株式会社 | 絶縁寿命試験方法および絶縁試験体 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6339229B1 (en) * | 1999-10-21 | 2002-01-15 | Mitsubishi Denki Kabushiki Kaisha | Test structure for insulation-film evaluation |
CN1985364A (zh) * | 2004-07-21 | 2007-06-20 | 精工爱普生株式会社 | 评价用于半导体装置的绝缘膜的特性的方法以及形成该绝缘膜的方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3599059A (en) * | 1969-05-15 | 1971-08-10 | Corning Glass Works | Ion implanted cadmium sulfide pn junction device |
US5986327A (en) * | 1989-11-15 | 1999-11-16 | Kabushiki Kaisha Toshiba | Bipolar type diode |
JPH04134842A (ja) * | 1990-09-27 | 1992-05-08 | Toshiba Corp | 絶縁膜の信頼性評価方法及び装置 |
JPH05129406A (ja) * | 1991-10-30 | 1993-05-25 | Tekunoroogu:Kk | 半導体装置の評価装置 |
JPH06201761A (ja) | 1992-12-28 | 1994-07-22 | Kawasaki Steel Corp | 絶縁膜の経時絶縁破壊特性測定方法 |
JP2878137B2 (ja) * | 1994-06-29 | 1999-04-05 | シャープ株式会社 | 増幅型光電変換素子、それを用いた増幅型固体撮像装置、及び増幅型光電変換素子の製造方法 |
US5990516A (en) * | 1994-09-13 | 1999-11-23 | Kabushiki Kaisha Toshiba | MOSFET with a thin gate insulating film |
JP2000243995A (ja) * | 1998-12-25 | 2000-09-08 | Canon Inc | 太陽電池モジュールの検査方法及び製造方法 |
US6671146B1 (en) * | 1999-01-19 | 2003-12-30 | Seiko Epson Corporation | Electrostatic protection circuit and semiconductor integrated circuit using the same |
JP2002050664A (ja) * | 2000-08-01 | 2002-02-15 | Mitsubishi Electric Corp | 絶縁膜評価用テスト構造及び、半導体装置の製造方法 |
JP4067346B2 (ja) * | 2002-06-25 | 2008-03-26 | 三洋電機株式会社 | 半導体集積回路装置 |
JP4440040B2 (ja) * | 2004-08-27 | 2010-03-24 | 三菱電機株式会社 | 半導体装置 |
JP4333642B2 (ja) * | 2005-06-17 | 2009-09-16 | ヤマハ株式会社 | キャパシタ装置及びキャパシタ装置の製造方法 |
-
2008
- 2008-02-07 JP JP2008027250A patent/JP4959596B2/ja active Active
-
2009
- 2009-02-02 US US12/364,008 patent/US7863922B2/en not_active Expired - Fee Related
- 2009-02-06 KR KR1020090009758A patent/KR101473018B1/ko active IP Right Grant
- 2009-02-06 CN CN2009100066417A patent/CN101504438B/zh not_active Expired - Fee Related
- 2009-02-06 TW TW098103880A patent/TWI478258B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6339229B1 (en) * | 1999-10-21 | 2002-01-15 | Mitsubishi Denki Kabushiki Kaisha | Test structure for insulation-film evaluation |
CN1985364A (zh) * | 2004-07-21 | 2007-06-20 | 精工爱普生株式会社 | 评价用于半导体装置的绝缘膜的特性的方法以及形成该绝缘膜的方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200947577A (en) | 2009-11-16 |
US7863922B2 (en) | 2011-01-04 |
JP2009188225A (ja) | 2009-08-20 |
KR101473018B1 (ko) | 2014-12-15 |
JP4959596B2 (ja) | 2012-06-27 |
TWI478258B (zh) | 2015-03-21 |
CN101504438A (zh) | 2009-08-12 |
US20090201028A1 (en) | 2009-08-13 |
KR20090086352A (ko) | 2009-08-12 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160323 Address after: Chiba County, Japan Patentee after: SEIKO INSTR INC Address before: Chiba, Chiba, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: EPPs Lingke Co. Ltd. Address before: Chiba County, Japan Patentee before: SEIKO INSTR INC |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130529 Termination date: 20210206 |