CN101503295A - SiC material comprising combination of alpha-SiC and beta-SiC and two-part plasma chamber cathode manufactured using the same - Google Patents
SiC material comprising combination of alpha-SiC and beta-SiC and two-part plasma chamber cathode manufactured using the same Download PDFInfo
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Abstract
The present invention provides an alpha type SiC-beta SiC combination type reaction sintered SiC material, a preparing method and a two-body plasma cathode using the material, especially to an alpha type SiC-beta SiC combination type reaction sintered beta type SiC material used for semiconductor engineering components and a preparing method thereof, wherein the method comprises the following steps: obtaining the alpha type SiC powder through normal-pressure or pressure sintering, mixing the carbon powder with the alpha type SiC powder for obtaining carbon-alpha type SiC mixture, and after heating the carbon-alpha type SiC mixture for forming, reacting with the fused silicon in a vacuum high-temperature environment for obtaining the beta-type SiC material with the electric resistance which satisfies the electric characteristic. The invention also provides the two-body plasma cathode which has a silicon-SiC structure and a flat or a certain-degree profile funnel shape and has a drop height.
Description
Technical field
Recently, the SiC material more and more is widely used as the element in a kind of semiconducter engineering, wherein, what the present invention relates to is a kind of SiC preparation methods with electrology characteristic, especially carbon dust and α type SiC powder mixes are obtained carbon-α type SiC molding together, molten silicon and this carbon-α type SiC molding reaction with adjusted good resistance, and penetrate in the molding, thereby make described α type SiC-β type SiC mating type reaction sintering SiC material have excellent mechanical property, high purity, characteristics such as high strength, simultaneously, also has the necessary electrology characteristic of semiconducter engineering, manufacturing expense is cheap, can accelerate the α type SiC-β type SiC silicon mating type reaction sintering SiC material of characteristics such as sintering process, its manufacture method and silicon-SiC structure of utilizing its reaction sintering, be the gabarit funnel-form of smooth or certain angle and have the plasma chamber cathode of drop.
Background technology
In recent years, graphite, quartz, Al
2O
3, SiC, AlN, BN etc. ceramic as tool or element application in the semi-conductor manufacturing of super large-scale integration, and in the semi-conductor manufacturing engineering and etching engineering under hot environment, quartz, glass, Si, and SiC be used as main raw.
Wherein, the pyroceramic element of using as semiconducter engineering used quartzy much numbers that accounts in the past, but along with the maximization of the integrated and employed silicon wafer of nearest semiconducter engineering, the use of SiC (silicon carbide) presents the trend of rising.Because SiC has remedied the deficiency of silica glass, have excellent thermal characteristic, mechanical property, resistivity against fire, electrology characteristic, weather resistance and anti-particle pollution characteristic etc.
The common method of making above-mentioned SiC material is thermolysis CVD method and plasma CVD method, specifically, the gas that contains silicon and carbon at high temperature reacts and generates SiC, then in the environment of sensitization, by chemical reaction between gaseous substance or decomposition, produce stable SiC.Though this method can produce have high purity, high-density, well behaved SiC material, in actual procedure,, be difficult to be applicable to the element of semiconducter engineering owing to be difficult to produce shortcomings such as thick product and price height.Referring to Fig. 7.
In addition, for the α type SiC material that utilizes normal pressure and pressure sintering manufactured, though have characteristics such as excellent thermal characteristic, mechanical property, resistivity against fire, but because the shrinking percentage behind the sintering is higher, therefore be difficult to produce large product, and during fabrication, owing to used a large amount of sintering aids, therefore be difficult to control the impurity content in the SiC material, especially, be difficult to regulate its electrology characteristic, can only be used for the form of the simple components of part semiconductor engineering, be not suitable for the element that should have electrology characteristic, thereby limited its purposes.
On the other hand, in the above-mentioned semiconducter engineering element, the central plasma body of plasma chamber cathode that is used for the chip etching operation is by injecting reactant gases in chamber, forming behind the galvanization then.Commonly used in the past have the gabarit funnel-form that is smooth or certain angle and have the multiple structure of two build plasma chamber cathodes of drop open in a lot of documents, be by binding agent or bolt, make material, aluminium of carbon series etc., combine with single silicon materials or silicon, thereby form the negative electrode of multiple structure with a plurality of gas inlets.
For example, disclose in korean patent application 10-0708321 number " the cathode electrode join-together structure of plasma-etching apparatus " a kind of have be inserted into chamber in and fixed technical scheme as finishing base material (Tyingtool) silicon electrode and Graphite Electrodes, thereby when solving bonding, the problem that the bonding force that causes by loosening is low.But in the chamber of High Temperature High Pressure, graphite easily deforms, thereby damage finishes base material and combining site, causes the side unstable properties in the face of silicon electrode, thereby causes producing the particulate situation because of friction.
In addition, in order to address the above problem, Korea S openly discloses a kind of plasma body for application documents 10-2007-0077048 number and has taken place with electrode and plasma treatment appts, promptly, silicon contained be dipped in silicon carbide and form the CVD-carbofrax material, negative electrode is made by described CVD-carbofrax material, thereby obtains excellent mechanical property and can reach the higher engagement state of internal homogeneity.But, when making described CVD-silicon carbide, need the sintering aids of a lot of high prices, thereby not only improved the manufacturing expense of negative electrode, and, also increased the impurity content in the carborundum sintered body, thereby be difficult to be applicable to the wafer engineering along with adding a large amount of sintering aids.
Summary of the invention
The problem that invention will solve
In order to remedy above-mentioned deficiency, the present invention seeks to, a kind of α type SiC-β type SiC mating type reaction sintering SiC material and its manufacture method are provided, it is characterized in that: can keep the favorable mechanical performance, have excellent electrology characteristic, be applicable to the semiconducter engineering element, and can reduce manufacturing expense.The present invention also will provide gabarit funnel-form a kind of silicon-SiC structure, that be smooth or certain angle and have two build plasma chamber cathodes of drop, it is characterized in that: when making the gabarit funnel-form be used for semiconducter engineering or certain angle smooth and having two build plasma chamber cathodes of drop with being of element, use described α type SiC-β type SiC association reaction sintered sic material, thereby can keep good electrology characteristic, even in the semiconducter engineering under the high temperature and high pressure environment, also can improve mechanical property and economy.
Solve the means of problem
In order to achieve the above object, the invention provides a kind of α type SiC-β type SiC mating type reaction sintering SiC material and its preparation method, specifically comprise as the next stage: obtain α type SiC powder by normal pressure or pressure sintering, will obtain the stage of carbon-α type SiC mixture after carbon dust and the described α type SiC powder mixes; Described carbon-α type SiC mixture obtains the stage of carbon-α type SiC molding through high-temperature pressurizing; Under 1400 ℃～2000 ℃ vacuum high-temperature condition, make the molten silicon of adjusted good resistance and described carbon-α type SiC molding reaction and penetrate in the molding, thereby obtained to be used for the α type SiC-β type SiC association reaction sintered sic material of semiconducter engineering element.The present invention also provides a kind of two build plasma chamber cathodes that are the gabarit funnel-form of smooth or certain angle and have drop, described plasma chamber cathode is combined with silicon electrode by the SiC electrode and constitutes, wherein, described SiC electrode is to be made of the sintering reaction SiC material of making according to above-mentioned manufacture method in conjunction with α type SiC-β type SiC with electrology characteristic.
The invention effect
According to an aspect of the present invention, the electrology characteristic of its α type SiC-β type SiC mating type reaction sintering SiC material is different different because of use, and contains fine and close xln, can access the high-purity alpha type SiC-β type SiC mating type reaction sintering SiC material that contains few impurity.And, in the sintering process of material, the size of size does not almost have to change and by the exothermic reaction from body, accelerated sintering process, even under lower temperature, also can carry out sintering, thereby can improve the preparation effect of α type SiC-β type SiC mating type reaction sintering SiC material.
In addition, according to a further aspect in the invention, two build negative electrodes are the silicon electrode be combined intos by SiC electrode and bottom, wherein, described SiC electrode is to be obtained by preparation in accordance with the present invention and SiC material with α type SiC-β type SiC mating type reaction sintering of electrology characteristic constitutes.Use the electrode performance of described material stable, when being used in the semiconductor wafer operation of High Temperature High Pressure, can prevent to cause the situation and the intensity height of combining site damage, thereby can prolong the work-ing life of negative electrode because of the heat conduction rate variance that produces with silicon electrode.And, by improving wear resistance, prevent to produce on the wafer particle, owing to have high thermal conductivity and low-resistance characteristic, therefore have excellent electrology characteristic, highly purified wafer manufacture can be carried out, and then the yield rate when producing wafer can be improved.
Description of drawings
Fig. 1 is the schema of expression according to β type SiC sintered compact preparation method of the present invention.
Fig. 2, Fig. 3 are expression each engineer operation figure according to β type SiC sintered compact preparation method of the present invention.
Fig. 4 is synoptic diagram and the sectional view of expression based on the plasma chamber cathode of a preferred embodiment of the present invention.
Fig. 5 is the sectional view of expression based on the plasma chamber cathode of an alternative embodiment of the invention.
Fig. 6 is that expression is based on plasma chamber cathode of the present invention and upper plate bonded sectional view.
Fig. 7 is the image of the SiC material of prior art.
Fig. 8 is the image of sintering α type SiC material.
Fig. 9 is the image of α type SiC-β type SiC mating type reaction sintering SiC material.
Nomenclature
The 10:SiC electrode; 20: silicon electrode; 30: upper plate; 100: negative electrode; 110: outer shroud
Embodiment
The present invention relates to a kind ofly be widely used in semi-conductor manufacturing engineering under the high temperature and high pressure environment in recent years with the SiC preparation methods of element and use two build plasma chamber cathodes of described SiC material, wherein, described two build plasma chamber cathodes are silicon-SiC structures, are the gabarit funnel-form of smooth or certain angle and have two build plasma chamber cathodes of drop.According to an aspect of the present invention, provide a kind of α type SiC-β type SiC mating type reaction sintering SiC preparation methods, specifically comprise as the next stage as the preparation method of SiC sintered material.Obtain α type SiC powder by normal pressure or pressure sintering, carbon dust and described α type SiC powder mixes are obtained the stage of carbon-α type SiC mixture; Described carbon-α type SiC mixture obtains the stage of carbon-α type SiC molding through high-temperature pressurizing; Under 1400 ℃～2000 ℃ vacuum high-temperature condition, the silicon of adjusted good resistance and described carbon-α type SiC molding are reacted and penetrate into the intravital stage that is shaped, wherein sensistor is to regulate by the addition of boron.
And the present invention provides a kind of α type SiC-β type SiC mating type reaction sintering SiC material by above-mentioned preparation method.
According to a further aspect in the invention, provide a kind of two build plasma chamber cathodes that are used for gabarit funnel-form semiconductor wafer etching engineering, that be smooth or certain angle and have drop: have that top SiC electrode and bottom silicon electrode combine between the higher and lower levels and silicon-SiC structure of forming, wherein, described SiC electrode is to be made of the α type SiC-β type SiC mating type reaction sintering SiC material that above-mentioned preparation method according to the present invention makes.
Followingly formation of the present invention, embodiment are elaborated with reference to accompanying drawing.Wherein: Fig. 1 is based on the schema of the expression α type SiC-β type SiC mating type reaction sintering SiC preparation methods of a preferred embodiment of the invention; The expression that Fig. 2 and Fig. 3 are based on the preferred embodiment of the present invention prepares each operation flow diagram of β type SiC sintered compact preparation method.Preparation method based on the β type SiC sintered compact of the preferred embodiment of the present invention, specifically comprise as the next stage: as shown in Figure 1, obtain α type SiC powder by normal pressure or pressure sintering, carbon dust and described α type SiC powder mixes are obtained the stage (S11) of carbon-α type SiC mixture; Described carbon-α type SiC mixture obtains the stage (S12) of carbon-α type SiC molding through high-temperature pressurizing; Under 1400 ℃～2000 ℃ vacuum high-temperature condition, molten silicon and described carbon-α type SiC molding are reacted and penetrate into the intravital stage (S13) that is shaped.
Below, the embodiment at each engineering phase among the present invention is described in detail.
-form carbon-α type SiC mixture the stage-
In general, sintering α type SiC can add sintering aid during material, cause containing a large amount of impurities in the sintered compact, and the intravital void content height of sintering, therefore be not suitable for the semiconducter engineering under the hot environment.Referring to Fig. 8.
Among Fig. 8, Pore is the hole.In order to improve the above-mentioned feature of α type SiC material, also in order to carry out sintering processing better, earlier together with carbon dust and pulverous α type SiC powder mixes, acquisition carbon-α type SiC mixture.
The preferred particle size of described carbon dust is 0～50 μ m; Described α type SiC powder preferably uses the α type SiC material that obtains by following reaction: use large-scale acheson furnace, mix SiO
2Behind refinery coke, logical go up electric current, reacting obtains described α type SiC material under 2200 ℃～2400 ℃ high temperature; The preferred particle size of above-mentioned α type SiC powder is 1～100 μ m.
In addition, in said process, silicon described later is being immersed and preparing in the process of α type SiC-β type SiC mating type reaction sintering SiC material, reactivity for the carbon composition that improves silicon and above-mentioned carbon-SiC mixture, can sneak into Si powder and dopant powder that size of particles respectively is 0～50 μ m, with respect to carbon-SiC mixture gross weight, above-mentioned Si powder preferred weight ratio is that 0.1～20 weight %, dopant powder preferred weight ratio are 0.1～10 weight % scope.
-form carbon-α type SiC molding the stage-
By to pressuring methods such as the extruding of carbon-α type SiC mixture or CPI, the carbon-α type SiC molding that obtains having form, wherein said carbon-α type SiC mixture are to obtain by the powder that mixes carbon dust and described α type SiC material.
The preparation of-α type SiC-β type SiC mating type reaction sintering SiC sintered compact-
Silicon is coated on described carbon-α type SiC molding, and under vacuum state, carry out heat, silicon is penetrated in the molding by the hole of molding, carbon and siliconising reaction, generating β type SiC, all is α type SiC-β type SiC mating type reaction sintering SiC material β type SiC and silicon and that have electrology characteristic thereby prepared α type SiC on every side.
Above-mentioned heating has been infiltrated in the process of carbon-α type SiC molding of silicon, and the temperature that is heated will be lower than the α type SiC agglomerating temperature of normal pressure and pressurization, and preferred temperature is 1400 ℃～2000 ℃.And, in said process, between carbon and the α type SiC mixture, because of vacuum produces capillary pressure, adds the deadweight of silicon, silicon is immersed, fill pore, thereby obtain having the α type SiC-β type SiC mating type reaction sintering SiC material atresia dense structure, that contain electrology characteristic.Referring to Fig. 9.
In this process, by reaction, carbon between reaction, carbon and α type SiC between carbon and the α type SiC mixture, silicon, the doping agent mixture and have reaction between the silicon of osmotic resistance, make the material of acquisition have electrology characteristic.Wherein, the adjusting of sensistor is to be undertaken by the addition of regulating boron, floods the silicon of adjusted good resistance then, thereby can regulate the resistance of α type SiC-β type SiC mating type reaction sintering SiC material.
The adjusting of sensistor is to be undertaken by the addition of regulating boron, and wherein, the addition of boron is many more, and then the resistance of silicon is just low more, thus can improve and carbon between reactivity.The silicon of above-mentioned adjusted good resistance and carbon-α type SiC intravital carbon reaction that is shaped, thus desired resistance characteristic or low resistance characteristic obtained.
Herein, when carbon is mixed with α type SiC, silicon and doping agent, with respect to resulting α type SiC-β type SiC mating type reaction sintering SiC material gross weight, the preferred weight ratio of the silicon of adjusted good resistance is that the preferred weight ratio of doping agent of 30～80 weight %, decision sensistor is 0.1～10 weight %.
-α type SiC-β type SiC mating type reaction sintering SiC properties of materials-
The α type SiC-β type SiC mating type reaction sintering SiC material that obtains according to the preparation method in the invention described above, has following feature: the effect that in reaction sintering, does not almost have the variation, carbon of size and mixture tissue that α type SiC reaction generates to play to increase the strength of materials and owing to silicon has been filled described mixture tissue space, increased the strength of materials and distributed, thereby can access the sintered compact of atresia densification in the mode of particle coagulation body.And, do not promote raw material powder agglomerating sintering aid owing to add, so the content of impurity reduces obviously.
Also have, can under the temperature that is lower than normal pressure and pressure sintering preparation method, heat,, also accelerated operating speed simultaneously owing to take place to have accelerated sintering process, so also can keep the size and shape of β type SiC sintered compact behind the reaction sintering from the body exothermic reaction.
Especially,, therefore can prepare the material of different electrical properties, compare, increase its purposes, also can be applicable to the semiconducter engineering field comprehensively with the SiC that only has the mechanochemistry characteristic owing to can regulate resistance.
According to the present invention, can produce following semiconductor manufacturing facility α type SiC-β type SiC mating type reaction sintering SiC material equipment, that have electrology characteristic that is used for: it has requirement and has the required electrology characteristic of the semiconducter engineering of corrosion-and high-temp-resistant, especially conductor etching engineering and can prepare the SiC material with high purity, high-density and high-strength characteristic, and can prepare SiC material fast, thereby can reduce cost with good mechanical properties.
According in another aspect of this invention, a kind of Si-SiC structure is provided, is the gabarit funnel-form of smooth or certain angle and has two build plasma chamber cathodes of drop, it is at the negative electrode that is used for semiconductor wafer etching engineering, is the gabarit funnel-form of smooth or certain angle and has drop, the SiC electrode combines between the higher and lower levels on the top of silicon electrode, form silicon-SiC structure, wherein, described SiC electrode is to be made of the α type SiC-β type SiC mating type reaction sintering SiC material that above-mentioned preparation method according to the present invention makes.Below silicon-SiC the structure of explanation among the present invention, the formation and the effect that are the gabarit funnel-form of smooth or certain angle and have two build plasma chamber cathodes of drop describe.
Fig. 4 be expression based on a preferred embodiment among the present invention, be the gabarit funnel-form of smooth or certain angle and have the synoptic diagram and the sectional view of the plasma chamber cathode of drop; Fig. 5 is the sectional view of expression based on the plasma chamber cathode of another embodiment among the present invention, and Fig. 6 is that expression is based on plasma chamber cathode of the present invention and upper plate bonded sectional view.As shown in Figure 4, bottom silicon electrode 20 combines between the higher and lower levels with top SiC electrode 10 and has constituted two builds, and wherein, described SiC electrode is that the α type SiC-β type SiC mating type reaction sintering SiC material that is obtained by preparation in accordance with the present invention constitutes; Above-mentioned silicon electrode 20 both can pass through elastomer-bonded with SiC electrode 10, also can carry out combination by joint bolt.
In addition, as shown in Figure 5, silicon electrode 20 combines the negative electrode 100 that has constituted individual with SiC electrode 10, and therefore as shown in Figure 6, in chamber, described negative electrode can combine separately with the upper plate 30 that forms arbitrarily; As shown in Figure 5, the negative electrode outside has the outer shroud 110 that constitutes with separate stage, and approach combines with upper plate 30 to make negative electrode pass through separately, and the outer shroud 110 in the outside has one closely-spaced apart from intermediary negative electrode 100, therefore with after upper plate combine, formed the picture funnel and centered on structure on every side.
As mentioned above, in the plasma chamber cathode that contains said structure among the present invention, SiC electrode 10 has used α type SiC-β type SiC mating type reaction sintering SiC material, therefore have excellent mechanical propertys such as electric property, high thermal conductivity, high rigidity, scale resistance, wear resistance, erosion resistance and high-temperature stability, therefore when the silicon electrode 20 that is incorporated into the bottom combines with the upper plate 30 that is incorporated into top, can prevent the situation that causes bolt (B) combining site to damage because of distortion.When wearing and tearing,, can prevent that particulate from taking place owing to used highly purified α type SiC-β type SiC mating type reaction sintering SiC material when deforming owing to described silicon electrode 20 and upper plate 30.And, can produce low-resistance described SiC electrode 10 low-resistance, that 0.10hm-cm is following, and because of having high thermal conductivity, when upper plate 30 applies voltage, can generate the fine isoelectronic species, and resulting plasma density is even, thereby can be used in the unicircuit production of wafer.
Claims (9)
1. α type SiC-β type SiC mating type reaction sintering SiC preparation methods, specifically comprise as the next stage: obtain α type SiC powder by normal pressure or pressure sintering, will obtain the stage (S11) of carbon-α type SiC mixture after carbon dust and the described α type SiC powder mixes; Described carbon-α type SiC mixture obtains the stage (S12) of carbon-α type SiC molding through high-temperature pressurizing; Under 1400 ℃～2000 ℃ vacuum high-temperature condition, make the silicon of adjusted good resistance and described carbon-α type SiC molding reaction and penetrate into the intravital stage (S13) that is shaped, wherein sensistor is regulated by the addition of boron.
2. α type SiC-β type SiC mating type reaction sintering SiC preparation methods as claimed in claim 1 is characterized in that, described α type SiC powder makes the α type SiC material of preparation with the following method: use large-scale acheson furnace, mix SiO
2Behind refinery coke, lead to last electric current, obtaining α type SiC material after the reaction under 2200 ℃～2400 ℃ high temperature.
3. α type SiC-β type SiC mating type reaction sintering SiC preparation methods as claimed in claim 1, it is characterized in that, described α type SiC powder and carbon dust mix, obtain in the stage (S11) of carbon-α type SiC mixture, sneak into Si powder and dopant powder that size of particles respectively is 0～50 μ m, and gross weight with respect to carbon-SiC mixture, the weight ratio of Si powder is 0.1～20 weight %, the weight ratio of doping agent is 0.1～10 weight %, thereby can improve the silicon in the dipping and the reactivity of carbon.
4. α type SiC-β type SiC mating type reaction sintering SiC preparation methods as claimed in claim 1, it is characterized in that, described α type SiC powder mixes with carbon dust and obtains among carbon-α type SiC mixture stage (S11), employed carbon dust size of particles is 0～50 μ m, and α type SiC powder particle size is 1～100 μ m.
5. α type SiC-β type SiC mating type reaction sintering SiC preparation methods as claimed in claim 1, it is characterized in that, in the stage (S13) of the silicon of adjusted good resistance and described carbon-α type SiC molding reaction, sensistor is regulated by the addition of boron, gross weight with respect to α type SiC-β type SiC mating type reaction sintering SiC material, the weight ratio of the silicon of adjusted good resistance is 30～80 weight %, the weight ratio of doping agent is 0.1～10 weight %, can regulate resistance by the silicon and the doping agent that add in the above-mentioned scope.
6. a α type SiC-β type SiC mating type reaction sintering SiC material that obtains by each described preparation method in the claim 1～4 is characterized in that described SiC material is the SiC material that is used for the semiconducter engineering element.
7. two build plasma chamber cathodes that use α type SiC-β type SiC mating type reaction sintering SiC material, it is characterized in that, the following formation of described two build plasma chamber cathodes: in the etching work procedure of semiconductor wafer, by inject in the chamber reactant gases and logical on generation plasma phenomenon behind the electric current, be the gabarit funnel-form of smooth or certain angle and have in the plasma chamber cathode of drop, in conjunction with SiC electrode (10), described SiC electrode (10) is to be made of the α type SiC-β type SiC mating type reaction sintering SiC material according to each the described method preparation in the claim 1 to 4 on the top of silicon electrode (20).
8. two build plasma chamber cathodes of use α type SiC-β type SiC mating type reaction sintering SiC material as claimed in claim 7, it is characterized in that the combination of described silicon electrode (20) and SiC electrode (10) is a kind of combination that is selected from elastomerics (E) combination and joint bolt (B) combination.
9. two build plasma chamber cathodes of use α type SiC-β type SiC mating type reaction sintering SiC material as claimed in claim 7 is characterized in that the gabarit drop of above-mentioned electrode contains from the flared ring structure of electrode centers.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070131384A KR100867961B1 (en) | 2007-12-14 | 2007-12-14 | Alpha;type sic- beta; type sic combined reaction sintering sic material and manufacture method and plasma chamber cathode that use it |
| KR1020070131384 | 2007-12-14 |
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| CN101503295A true CN101503295A (en) | 2009-08-12 |
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| CNA2008101871019A Pending CN101503295A (en) | 2007-12-14 | 2008-12-12 | SiC material comprising combination of alpha-SiC and beta-SiC and two-part plasma chamber cathode manufactured using the same |
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| Country | Link |
|---|---|
| JP (1) | JP2011506251A (en) |
| KR (1) | KR100867961B1 (en) |
| CN (1) | CN101503295A (en) |
| TW (1) | TW200930688A (en) |
| WO (1) | WO2009078605A2 (en) |
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| CN108558405A (en) * | 2017-03-10 | 2018-09-21 | 成都超纯应用材料有限责任公司 | A kind of preparation method of high-compactness high-purity carborundum substrate material |
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| WO2016159146A1 (en) * | 2015-03-31 | 2016-10-06 | 北陸成型工業株式会社 | Silicon carbide member for plasma treatment devices, and method for manufacturing same |
| KR102619677B1 (en) * | 2021-12-16 | 2024-01-02 | 주식회사 월덱스 | A two-piece electrode mounted in the chamber of an etching apparatus for semiconductors |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0648860Y2 (en) * | 1985-05-29 | 1994-12-12 | 沖電気工業株式会社 | Jig for semiconductor wafer |
| JP2828523B2 (en) * | 1991-06-24 | 1998-11-25 | 京セラ株式会社 | High toughness silicon carbide sintered body |
| JP3642446B2 (en) | 1996-08-01 | 2005-04-27 | 東芝セラミックス株式会社 | Semiconductor wafer processing tool |
| JPH11302077A (en) | 1998-04-20 | 1999-11-02 | Tokai Konetsu Kogyo Co Ltd | Production of silicon carbide heater |
| KR100299099B1 (en) * | 1999-04-30 | 2001-09-13 | 손재익 | Manufacturing Method of Silicon Carbide Ceramic Seals by Liquid Phase Reaction Sintering |
| KR100419778B1 (en) * | 2001-02-16 | 2004-02-21 | 한국에너지기술연구원 | Manufacturing method of silicon cabide-boron carbide composites by liquid phase reaction sintering |
-
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- 2008-12-05 JP JP2010537855A patent/JP2011506251A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108558405A (en) * | 2017-03-10 | 2018-09-21 | 成都超纯应用材料有限责任公司 | A kind of preparation method of high-compactness high-purity carborundum substrate material |
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| Publication number | Publication date |
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| TW200930688A (en) | 2009-07-16 |
| WO2009078605A3 (en) | 2010-07-22 |
| JP2011506251A (en) | 2011-03-03 |
| KR100867961B1 (en) | 2008-11-10 |
| WO2009078605A2 (en) | 2009-06-25 |
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