CN106045520A - Low-resistivity linear-resistance silicon carbide and graphite composite and preparation method thereof - Google Patents
Low-resistivity linear-resistance silicon carbide and graphite composite and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a low-resistivity linear-resistance silicon carbide and graphite composite and a preparation method thereof. The silicon carbide and graphite composite is composed of silicon carbide phase and a graphite phase converted from carbon phase during sintering and is free of third-phase substances, the graphite phase is 10-20% by weight, and the silicon carbide/graphite composite is 110-160 W/m<-1>/K<-1> in heat conductivity, 10-750 Omega/cm in direct-current resistivity that never changes with voltage, and 0.5-45 Omega in alternating-current resistivity modulus that never changes with frequency. The composite of the invention comprises only silicon carbide and graphite and is free of third-phase substances, and by adjusting the content of graphite, it is possible to obtain the silicon carbide/graphite composite with high heat conductivity, low resistance and linear resistance.
Description
Technical field
The present invention relates to low-resistivity and the preparation method of linear resistance feature carborundum/graphite composite material, belong to
Field of compound material.
Background technology
Silicon carbide ceramics is owing to having good acid-alkali-corrosive-resisting, mechanical performance and antioxygenic property, higher anti-thermal shock
Property and have good physics and the chemical property such as dimensional at very high temperatures, can be used for radioactivity, corrosivity, explosive,
Many complex working conditions such as high temperature.Meanwhile, it is expected to become the electronic component run under severe rugged environment.
But normal pressure-sintered SiC has characteristic of semiconductor, limit its application.There are some researches show: high-purity alpha-SiC has 1012
The high resistivity of the Ω cm order of magnitude, but in the presence of having the impurity such as ferrum, nitrogen, resistivity then can be reduced to zero point a few Ω cm,
The scope of change in resistance is closely related with dopant species and quantity.For meeting the application of different field, need SiC ceramic
Resistivity regulates and controls in different scopes.
The electrical property research of SiC ceramic has three below aspect: (1) carries out conduction SiC ceramic research, mainly passes through nitrogen
Doping enters SiC lattice so that it is conduction.YW Kim etc. are by adding a small amount of Yttrium trinitrate or aluminium nitride and rare earth in SiC ceramic
Oxide, KJ Kim etc. realize SiC ceramic conduction research, target by adding small amounts yttrium and nitride in SiC ceramic
Being to carry out its spark machined, solution SiC ceramic hardness is high, fragility is big, the unmanageable difficult problem of complicated shape.(2) height is carried out
Thermal conductance, quasiconductor SiC ceramic research, mainly by adding sintering aid aluminium oxide and yittrium oxide or other rare earth oxides
Combination improves its thermal conductivity, regulates electrical property, develops it and is used as semiconductor substrate.(3) high insulation SiC ceramic research is carried out,
Main exploitation application on the electronic devices and components such as high-power, high frequency, high temperature in its future.
At present, the research of SiC electrical property concentrates on high insulation aspect, substantially as replacing of material integrated antenna package Si substrate
For material.Volz et al. is by adding VSi in buried powder2, by buried powder steam to the diffusion of sample body, by sintered sic sample
The resistivity of product brings up to 2 × 1010Ω cm, has reached the purpose of high insulation.Lim et al. is then by with aluminium oxide and yittrium oxide being
Sintering aid, the mode of hot pressing liquid-phase sintering is prepared for the SiC ceramic of high resistivity.Under study for action, they find along with sintering
The content of auxiliary agent increases to 10Vol% from 1Vol%, and the resistivity of material is from 3.0 × 106Ω cm increases to 1.3 × 108Ωcm。
High resistivity derives from Al2O3In Al impurity instead of the position of Si, as deep acceptor energy level, capture carrier.And by inciting somebody to action
Al2O3Replacing with AlN, they have prepared resistivity and have been up to 1.3 × 1010The SiC ceramic of Ω cm, sintering aid used is
3Vol%AlN-YAG.
Foregoing invention is all prepared by interpolation low melting point oxide or low-melting-point metal, at regulation thyrite resistor
While, the resistance to chemical corrosion etc. of meeting attacking material.Research finds that carbon, graphite-phase are extraordinary conductive and heat-conductive phases, because of
Carbon or graphite-phase are incorporated in material and improve its electricity, thermal property by this design.
United States Patent (USP) US 5422322 discloses the silicon carbide/carbon-graphite composite material and from sintering of a kind of densification
Plant the method for manufacturing this condensation material multiple.This composite includes silicon carbide substrate, the carbon-graphite of 2-30wt%, carbon-graphite
Being made up of the presoma of graphite surface one layer of carbon of parcel, the carbon matrix precursor binding agent containing 10-20wt% graphite, at least 5wt% is such as
The sintering aid that phenolic resin etc. are a small amount of with (0.1-15wt%), such as boron and free carbon.Above-mentioned raw materials is mixed with slurry, through making
Grain, dry-pressing, unsticking, burn till and prepare composite.In composite, carborundum granularity is between 2 and 15 microns, carbon graphite
Crystal grain diameter is between 10 and 75 microns, and density is at least the 80% of solid density.
Silicon carbide/carbon composite ceramic body disclosed in US4692418, has highly uniform fine-grained microstructure.Containing extremely
The carborundum of 50%, and its grain diameter less is no more than about 5 microns, and the particle mean size of graphite granule is less than silicon-carbide particle particle diameter
And dispersed, and density is at least the 75% of solid density.By micropore green compact osmosis at about 1900 DEG C of inert atmospheres or
Make under sintering temperature in vacuum.
US 5968653 the invention discloses a carbon-graphite/silicon carbide compound goods.In a preferred embodiment, compound
Goods include the silicon carbide body of densification, two gap areas: (1) compacted zone containing abundant metallic silicon and (2) one little
Carborundum/metal/carbon-graphite linings and carbon-graphite body.
The thing of the carbon-graphite of above-mentioned preparation/silicon carbide compound goods or silicon carbide/carbon composite ceramic body material is mutually for carbonization
Silicon, graphite and/or carbon, consistency is the highest.And the electric conductivity of carbon phase is less than graphite, and low consistency causes in material big
The pore of amount exists, and the two common effect can reduce the electrically and thermally performance of material.
Summary of the invention
For the problems referred to above, object of the present invention is to provide one and prepare there is low-resistivity, linear resistance and height
The carborundum/graphite composite material of thermal conductivity feature, its preparation method and the regulation thermal conductivity of carborundum and electric property
Method.
On the one hand, the invention provides carborundum/graphite composite material, described carborundum/graphite composite material is by carbonization
Silicon phase and the graphite-phase come by carbon phase in version in sintering process form, without third phase material, the content of described graphite-phase
For 10-20wt%, the thermal conductivity of described carborundum/graphite composite material is 110-160W m-1·K-1, dc resistivity is 10
～750 Ω cm and not with change in voltage, AC resistance modulus value is 0.5～45 Ω and does not changes with frequency.
The composite of the present invention only silicon carbide-containing and graphite-phase, without third phase material, by containing of regulation graphite-phase
Amount can obtain the carborundum/graphite composite material with highly thermally conductive property, low-resistivity, linear resistance property.
It is preferred that the relative density of described carborundum/graphite composite material is more than 90%.
On the other hand, the present invention provides a kind of method preparing above-mentioned composite, including:
The mixed powder molding of carborundum Yu carbon source is prepared biscuit, and wherein said carbon source is amorphous carbon and thermosetting phenolic tree
The mixture of fat；And
Gained biscuit of ceramics is sintered at 800～1200 DEG C in argon gas atmosphere at 2150～2250 DEG C 1～3 little after unsticking
Time so that carbon phase in version is graphite-phase obtains described carborundum/graphite composite material.
The thermosetting phenolic resin of the interpolation of the present invention can play again the effect of binding agent as carbon source, it is not necessary to extra
Add binding agent.
Additionally, the present invention is carbon source by introducing carbon with organic carbon source (such as, thermosetting phenolic resin) and agraphitic carbon,
By regulating the content of total carbon source, control to make carbon be completely reformed into graphite-phase mutually through sintering process, make composite only include
Carborundum phase and graphite-phase are biphase.Wherein, the nano-sized carbon produced in its cracking process of the organic carbon source of interpolation has high reaction
Quickly remove silicon carbide silicon oxide under activity, beneficially lower temperature, in terms of material sintering densification, there is clear superiority,
And realize densification sintering.The inorganic carbon source added is grown up at obstruction carborundum grain and is had significant advantage, it is achieved carborundum
The low-resistivity of sill, linear resistance, high heat conductance, be expected to be applied to battery module and other field.
It is preferred that the rate of charge of amorphous carbon and thermosetting phenolic resin is (7～17) g:10ml.
Another aspect, the present invention provides a kind of thermal conductivity regulating carborundum and the method for electric property, described method bag
Include with the mixed powder of carborundum and carbon source as raw material, molding prepare biscuit at 800～1200 DEG C after unsticking in argon gas atmosphere
In sinter 1～3 hour at 2150～2250 DEG C so that carbon phase in version be after graphite-phase with silicon carbide compound, by controlling carbon source
Addition and the kind regulation thermal conductivity of carborundum of carbon source and electric property.
It is preferred that the present invention is with the mixture of thermosetting phenolic resin or amorphous carbon and thermosetting phenolic resin as carbon
Source, the addition of control carbon source is 10～20wt% and the rate of charge of amorphous carbon and thermosetting phenolic resin is (7～17) g:
10ml is so that the thermal conductivity of carborundum is at 110-160W m-1·K-1Between adjustable, dc resistivity be 10～750 Ω cm it
Between adjustable.
Accompanying drawing explanation
Fig. 1 is the shape appearance figure of the SiC/ graphite composite material that graphite-phase content is 10wt% of embodiment 1 preparation；
Fig. 2 is that the graphite-phase content of embodiment 1,2,5 preparation is respectively the SiC/ graphite of 10wt%, 15wt% and 20wt% again
The electric property figure of condensation material；
Fig. 3 is the shape appearance figure of the SiC/ graphite composite material that phosphorus content is 15wt% of embodiment 2 preparation；
Fig. 4 is the SiC/ graphite composite material shape appearance figure that phosphorus content is 20wt% of embodiment 3 preparation；
Fig. 5 is the shape appearance figure of the SiC/ graphite composite material that phosphorus content is 20wt% of embodiment 4 preparation；
Fig. 6 is the electricity of the SiC/ graphite composite material that phosphorus content is 20wt% of the different carbon source ratio of embodiment 4 and 6 preparation
Performance map；
Fig. 7 is the shape appearance figure of the SiC/ graphite composite material that phosphorus content is 20wt% of embodiment 5 preparation；
Fig. 8 is the shape appearance figure of the SiC/ graphite composite material that phosphorus content is 20wt% of embodiment 6 preparation；
Fig. 9 is the XRD figure spectrum of the SiC/ graphite composite material that phosphorus content is 20wt% of embodiment 6 preparation.
Detailed description of the invention
The present invention is further illustrated, it should be appreciated that following embodiment is merely to illustrate the present invention below in conjunction with embodiment,
And the unrestricted present invention.
The present invention with amorphous carbon, thermosetting phenolic resin and carborundum as raw material and by regulation phosphorus content, through batch mixing,
Obtain carborundum/graphite composite material after molding, unsticking, sintering, described carborundum/graphite composite material include carborundum phase and
The graphite-phase come by carbon phase in version in sintering process, the content of described graphite-phase can be 10-20wt%.Because of in sintering process
In by generate carbon source be transformed into graphite-phase, belong to carbon source content (also can claim phosphorus content) identical with the content of graphite-phase.
The preparation method of carborundum/graphite composite material that the explanation present invention in following exemplary ground provides.
The present invention uses silicon carbide powder, amorphous carbon powder body, thermosetting phenolic resin by proportioning at water or dehydrated alcohol
In solvent, it is sufficiently mixed (such as, by ball mill or sand mill mixing) through ball milling and prepares ceramic size.The most amorphous
The content of the carbon that toner body and thermosetting phenolic resin can produce as compounded carbons is 10-20%.Thermosetting phenolic resin is also
Bonding powder body effect can be played as binding agent, therefore without additionally adding binding agent when powder molding.There is thermosetting phenolic tree
The addition of fat, its Pintsch process carbon content can be that (silicon carbide powder, amorphous carbon powder body, organic carbon source are total for powder body gross mass
Quality) 1-20wt%, account for the 5-100wt% of compounded carbons.Wherein solvent can be water or dehydrated alcohol, makes pottery after mixing
Slurry.
Ceramic size is directly dried (such as, then being dried 12 hours at 60 DEG C in baking oven) again or mist projection granulating prepares pottery
Porcelain powder body.
Ceramic powder is ground, sieve after again by dry-pressing formed and/or isostatic pressing or casting, made pottery
Porcelain biscuit.The molding mode of the present invention is chosen as dry-pressing formed and/or isostatic pressing, or directly casting.As one
Individual example, ceramic powder is polished, cross 60 mesh sieves, dry-pressing formed under 40MPa, multiple for going out by 200MPa isostatic pressing
Condensation material biscuit.
First by biscuit of ceramics through unsticking.It is placed on again in certain sintering atmosphere (such as, argon) at 2150～2250 DEG C
Sinter and obtain carborundum/graphite composite material in 1～3 hour.Wherein the atmosphere of unsticking can be vacuum, and the temperature of unsticking can be 800
～1200 DEG C.
The unidirectional current of carborundum/graphite composite material prepared by the present invention is recorded through Keithley 2450 instrument for measuring DC resistance
Values of resistivity, not with change in voltage, has linear characteristic, and resistivity value scope is 10～750 Ω cm.
The friendship of carborundum/graphite composite material prepared by the present invention is recorded through Agilent E4990A precise impedance analyser
Leakage resistance value does not changes with a-c cycle, has linear character, and resistance modulus value scope is 0.5～45 Ω.
The thermal conductivity recording carborundum/graphite composite material prepared by the present invention through NETZSCH LFA447 instrument can be
110-160W·m-1·K-1。
The rupture strength recording composite prepared by the present invention through Instron 1195 is 300～446MPa.The closeest
Degree reaches more than 90%.
Enumerate embodiment further below to describe the present invention in detail.It will similarly be understood that following example are served only for this
Invention is further described, it is impossible to being interpreted as limiting the scope of the invention, those skilled in the art is according to this
Some nonessential improvement and adjustment that bright foregoing is made belong to protection scope of the present invention.Following example is concrete
Technological parameters etc. are the most only that an example in OK range, i.e. those skilled in the art can be done properly by explanation herein
In the range of select, and do not really want to be defined in the concrete numerical value of hereafter example.
Embodiment 1
By 90g carborundum, 7g amorphous carbon and 10ml thermosetting phenolic resin, (its Pintsch process carbon content is powder body total amount
3.0wt%) etc. raw material is sufficiently mixed uniformly by planetary ball mill in dehydrated alcohol, prepares slurry, 60 DEG C in an oven
It is dried 12h.Polished, cross 60 mesh sieves, dry-pressing formed under 40MPa, by 200MPa isostatic pressing for going out composite element
Base.Under vacuum, through 800 DEG C of unstickings, the base substrate after unsticking is under the conditions of argon, through 2150 for the composite biscuit of preparation
DEG C insulation is burnt till for 1 hour.The composite (numbering 10C90SiC sees labelling in Fig. 2 " 1 ") of preparation is fine and close, and microstructure is equal
Even, rupture strength is 446.8 ± 83.1MPa, and relative density is 99.5%, and thermal conductivity is 154.02W m-1·K-1, unidirectional current
Resistance rate is 705 Ω cm, and AC resistance modulus value is 45 Ω.Concrete pattern is shown in that Fig. 1, ac impedance spectroscopy Bode figure are shown in Fig. 2.
Embodiment 2
By 85g carborundum, 12g amorphous carbon and 10ml thermosetting phenolic resin, (its Pintsch process carbon content is powder body total amount
3.0wt%) etc. raw material is sufficiently mixed uniformly by planetary ball mill in dehydrated alcohol, prepares slurry, 60 DEG C in an oven
It is dried 12h.Polished, cross 60 mesh sieves, dry-pressing formed under 40MPa, by 200MPa isostatic pressing for going out composite element
Base.Under vacuum, through 900 DEG C of unstickings, the base substrate after unsticking is under the conditions of argon, through 2200 for the composite biscuit of preparation
DEG C insulation is burnt till for 1 hour.The composite (numbering 15C85SiC sees labelling in Fig. 2 " 2 ") of preparation is fine and close, and microstructure is equal
Even, rupture strength is 368.1 ± 79.6MPa, and relative density is 93.6%, and thermal conductivity is 132.20W m-1·K-1, unidirectional current
Resistance rate is 63.04 Ω cm, and AC resistance modulus value is 1.76 Ω.Concrete pattern is shown in that Fig. 3, ac impedance spectroscopy Bode figure are shown in Fig. 2.
Embodiment 3
By 80g carborundum, 17g amorphous carbon and 10ml thermosetting phenolic resin, (its Pintsch process carbon content is powder body total amount
3.0wt%) etc. raw material is sufficiently mixed uniformly by planetary ball mill in dehydrated alcohol, prepares slurry, 60 DEG C in an oven
It is dried 12h.Polished, cross 60 mesh sieves, dry-pressing formed under 40MPa, by 200MPa isostatic pressing for going out composite element
Base.Preparation composite biscuit under vacuum, through 1000 DEG C of unstickings, the base substrate after unsticking under the conditions of argon, warp
2200 DEG C of insulations are burnt till for 1 hour.The composite (numbering 3R17C80SiC) of preparation is fine and close, and microstructure is uniform, rupture strength
Being 306.2 ± 60.1MPa, relative density is 90.7%, and thermal conductivity is 110.80W m-1 K-1, and dc resistivity is 30
Ω cm, AC resistance modulus value is 1.10 Ω.Concrete pattern is shown in that Fig. 4, ac impedance spectroscopy Bode figure are shown in Fig. 2.
Embodiment 4
By 80g carborundum, 14g amorphous carbon and 20ml thermosetting phenolic resin, (its Pintsch process carbon content is powder body total amount
6.0wt%) etc. raw material is sufficiently mixed uniformly by planetary ball mill in dehydrated alcohol, prepares material powder through mist projection granulating,
Under 40MPa dry-pressing formed, by 200MPa isostatic pressing standby go out composite biscuit.The composite biscuit of preparation is in vacuum
Under the conditions of, through 1200 DEG C of unstickings, the base substrate after unsticking, under the conditions of argon, burns till through 2250 DEG C of insulations for 1.5 hours.Answering of preparation
Condensation material (numbering 6R14C80SiC sees labelling in Fig. 6 " 2 ") is fine and close, and microstructure is uniform, and thermal conductivity is 103.78W m-1·K-1, dc resistivity is 2.23 Ω cm, and AC resistance modulus value is about 1.4 Ω.Concrete pattern is shown in Fig. 5, ac impedance spectroscopy
Bode figure is shown in Fig. 6.
Embodiment 5
By raw materials such as 80g carborundum, the 68ml thermosetting phenolic resins 20wt% of powder body total amount (its Pintsch process carbon content be)
Dehydrated alcohol is sufficiently mixed uniformly by planetary ball mill, prepares material powder through mist projection granulating.Under 40MPa, dry-pressing becomes
Type, by 200MPa isostatic pressing for going out composite biscuit.Preparation composite biscuit under vacuum, through 1200
DEG C unsticking, the base substrate after unsticking, under the conditions of argon, burns till through 2200 DEG C of insulations for 1 hour.Composite (the numbering of preparation
20R80SiC, sees labelling in Fig. 2 " 3 ") fine and close, microstructure is uniform, and thermal conductivity is 115.20W m-1·K-1, D.C. resistance
Rate is 3.76 Ω cm, and AC resistance modulus value is about 1.5 Ω.Concrete pattern is shown in Fig. 7.
Embodiment 6
By 80g carborundum, the raw material such as 19g amorphous carbon and 3.3ml 1.0wt% of powder body total amount (its Pintsch process carbon content be)
Dehydrated alcohol is sufficiently mixed uniformly by planetary ball mill, prepares slurry, in an oven 60 DEG C of dry 12h.Ground
After, cross 60 mesh sieves, dry-pressing formed under 40MPa, by 200MPa isostatic pressing for going out composite biscuit.The composite wood of preparation
Under vacuum, through 1200 DEG C of unstickings, the base substrate after unsticking, under the conditions of argon, is incubated 1.5 hours through 2250 DEG C to material biscuit
Burn till.The composite (numbering 1R19C80SiC sees labelling in Fig. 6 " 1 ") of preparation is fine and close, and microstructure is uniform, thermal conductivity
For 93.5W m-1·K-1, dc resistivity is 3.78 Ω cm, and AC resistance modulus value is about 0.3 Ω.Concrete pattern is shown in Fig. 8,
Ac impedance spectroscopy Bode figure is shown in that Fig. 6, XRD figure spectrum are shown in Fig. 9；
Table 1
The pattern of the SiC/ graphite composite material of Fig. 1, Fig. 3, Fig. 4 identical organic carbon source content respectively and different total phosphorus content
Figure, the carbon content of its organic carbon source Pintsch process accounts for the 3wt% of total powder body, but total carbon source account for respectively total powder body be 10wt%,
15wt%, 20wt% are incremented by.From figure contrast, the microcosmic of all samples is uniform, and graphite-phase is evenly distributed in carbonization
In silicon substrate, and along with the increase (that is, in the case of organic carbon source is certain, the increase of agraphitic carbon content) of total carbon content, material
Material carborundum grain size reduction, microcosmic pore has increased slightly.
Fig. 8, Fig. 4, Fig. 5, Fig. 7 are respectively the SiC/ graphite composite wood that total phosphorus content of different carbon source ratio is all 20wt%
Material shape appearance figure, its organic carbon source Pintsch process carbon content account for total carbon source ratio be respectively 5wt%, 15wt%, 30wt%,
100wt%, it is known that along with the increase of organic carbon source Pintsch process carbon content ratio, the oarse-grained inorganic carbon source fall of interpolation
Low, the microstructure of material is more uniform, and consistency is stepped up.
Fig. 2 is the electric property figure of the SiC/ graphite composite material of phosphorus content 10-20wt%, knowable to table 1 and Fig. 2, with
The increase of carbon content, the AC impedance modulus value of material reduces, i.e. the resistivity of material reduces, and its modulus value is not the most with test frequency
(less than 107) increase and change.
Fig. 6 is that the SiC/ graphite of phosphorus content all 20wt% of the different carbon source ratio of embodiment 4 and embodiment 6 preparation is combined
The electric property figure of material, knowable to table 1 and Fig. 6, under the conditions of identical graphite addition, increases with organic carbon source content, material
AC impedance modulus value have increased slightly.
Fig. 9 is the XRD figure spectrum of the SiC/ graphite composite material that phosphorus content is 20wt% of embodiment 6 preparation, as can be seen from Figure 9
SiC/ graphite composite material prepared by the present invention is by carborundum phase and graphite-phase two phase composition, exists mutually without other things.
Claims (6)
1. carborundum/graphite composite material, it is characterised in that described carborundum/graphite composite material by carborundum phase and
The graphite-phase come by carbon phase in version in sintering process forms, and without third phase material, the content of described graphite-phase is 10-
20wt%, the thermal conductivity of described carborundum/graphite composite material is 110-160W m-1·K-1, dc resistivity is 10～750
Ω cm and not with change in voltage, AC resistance modulus value is 0.5～45 Ω and does not changes with frequency.
Carborundum/graphite composite material the most according to claim 1, it is characterised in that described carborundum/graphite composite wood
The relative density of material is more than 90%.
3. the preparation method of the carborundum/graphite composite material described in a claim 1 or 2, it is characterised in that described preparation
Method includes:
The mixed powder molding of carborundum Yu carbon source is prepared biscuit, and wherein said carbon source is amorphous carbon and thermosetting phenolic tree
The mixture of fat；And
Gained biscuit of ceramics is sintered at 800～1200 DEG C in argon gas atmosphere at 2150～2250 DEG C 1～3 little after unsticking
Time so that carbon phase in version is graphite-phase obtains described carborundum/graphite composite material.
Preparation method the most according to claim 3, it is characterised in that amorphous carbon and the rate of charge of thermosetting phenolic resin
For (7～17) g:10ml.
5. the thermal conductivity regulating carborundum and the method for electric property, it is characterised in that described method includes with carborundum
Be raw material with the mixed powder of carbon source, molding prepare biscuit at 800～1200 DEG C after unsticking in argon gas atmosphere 2150～
Sinter 1～3 hour at 2250 DEG C so that carbon phase in version be after graphite-phase with silicon carbide compound, by control carbon source addition and
The thermal conductivity of the kind regulation carborundum of carbon source and electric property.
Method the most according to claim 5, it is characterised in that with thermosetting phenolic resin or amorphous carbon and thermosetting
The mixture of phenolic resin is carbon source, and the addition controlling carbon source is 10～20wt% and amorphous carbon and thermosetting phenolic resin
Rate of charge be (7～17) g:10ml so that the thermal conductivity of carborundum is at 110-160W m-1·K-1Between adjustable, D.C. resistance
Rate is adjustable between 10～750 Ω cm.
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| CN111320478A (en) * | 2020-03-27 | 2020-06-23 | 有研资源环境技术研究院(北京)有限公司 | Preparation method of carbon-silicon ceramic target material |
| CN111320478B (en) * | 2020-03-27 | 2022-02-11 | 有研资源环境技术研究院(北京)有限公司 | Preparation method of carbon-silicon ceramic target material |
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