CN106045520B - A kind of silicon carbide/graphite composite material with low-resistivity, linear resistance property and preparation method thereof - Google Patents
A kind of silicon carbide/graphite composite material with low-resistivity, linear resistance property and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to a kind of silicon carbide/graphite composite materials with low-resistivity, linear resistance property and preparation method thereof, the graphite phase composition that the silicon carbide/graphite composite material is changed by carborundum phase and in sintering process by carbon phase, without third phase substance, the content of the graphite-phase is 10 20wt%, and the thermal conductivity of the silicon carbide/graphite composite material is 110 160Wm‑1·K‑1, for dc resistivity for 10~750 Ω cm and not with voltage change, AC resistance modulus value is 0.5~45 Ω and does not change with frequency.The composite material only silicon carbide-containing and graphite-phase of the present invention, without third phase substance, by the content for adjusting graphite-phase can obtain with highly thermally conductive property, low-resistivity, linear resistance property silicon carbide/graphite composite material.
Description
Technical field
The present invention relates to the preparation methods for having low-resistivity and linear resistance feature silicon carbide/graphite composite material, belong to
Field of compound material.
Background technology
Silicon carbide ceramics is due to having good acid-alkali-corrosive-resisting, mechanical performance and antioxygenic property, higher anti-thermal shock
Property and have the good physical and chemical properties such as dimensional at very high temperatures, available for radioactivity, corrosivity, it is explosive,
Many complex working conditions such as high temperature.Meanwhile it is expected to become the electronic component run under harsh environment.
But normal pressure-sintered SiC has characteristic of semiconductor, limits its application.Some researches show that：High-purity alpha-SiC has 1012
The high resistivity of the Ω cm orders of magnitude, but in the presence of having the impurity such as iron, nitrogen, resistivity can then be reduced to a few Ω cm of zero,
The range of change in resistance and dopant species and quantity are closely related.To meet the application of different field, need SiC ceramic
Resistivity regulates and controls in different ranges.
The electrical property research of SiC ceramic has following three aspects：(1) carry out conductive SiC ceramic research, mainly pass through nitrogen
Doping enters SiC lattices, makes its conduction.YW Kim etc. in SiC ceramic by adding in a small amount of yttrium nitrate or aluminium nitride and rare earth
Oxide, KJ Kim etc. realize SiC ceramic conduction research, target by adding in small amounts yttrium and nitride in SiC ceramic
It is to carry out its electrical discharge machining, solution SiC ceramic hardness is high, brittleness is big, the unmanageable problem of complicated shape.(2) carry out high
Thermal conductivity, semiconductor SiC ceramic research, mainly by adding sintering aid aluminium oxide and yttrium oxide or other rare earth oxides
It combines to improve its thermal conductivity, adjusts electrical property, develop it as semiconductor substrate.(3) carry out high insulation SiC ceramic research,
Mainly develop its following application on the electronic components such as high-power, high frequency, high temperature.
At present, in terms of the research of SiC electrical properties concentrates on high insulation substantially, as replacing for material integrated antenna package Si substrates
For material.Volz et al. in buried powder by adding VSi2, by diffusion of the buried powder steam to sample ontology, by sintered sic sample
The resistivity of product is increased to 2 × 1010Ω cm have achieved the purpose that high insulation.Lim et al. then by using aluminium oxide and yttrium oxide as
Sintering aid, the mode of hot pressing liquid-phase sintering are prepared for the SiC ceramic of high resistivity.Under study for action, they are had found with sintering
The content of auxiliary agent increases to 10Vol% from 1Vol%, and the resistivity of material is from 3.0 × 106Ω cm increase to 1.3 × 108Ωcm。
High resistivity derives from Al2O3In Al impurity instead of the position of Si, as deep acceptor energy level, capture carrier.And pass through by
Al2O3AlN is replaced with, they have prepared resistivity and have been up to 1.3 × 1010The SiC ceramic of Ω cm, sintering aid used are
3Vol%AlN-YAG.
Foregoing invention is prepared by adding low melting point oxide or low-melting-point metal, is adjusting thyrite resistor
While, resistance to chemical corrosion of meeting attacking material etc..Research finds that carbon, graphite-phase are extraordinary conductive and heat-conductive phases, because
Carbon or graphite-phase are introduced into material by this design improves its electricity, thermal property.
United States Patent (USP) US 5422322 discloses a kind of silicon carbide/carbon-graphite composite material and one from sintering of densification
Plant the method for manufacturing the multiple condensation material.The composite material includes silicon carbide substrate, the carbon-graphite of 2-30wt%, carbon-graphite
The presoma that one layer of carbon is wrapped up by graphite surface is formed, and the carbon matrix precursor binding agent of graphite containing 10-20wt%, at least 5wt% is such as
Phenolic resin etc. and (0.1-15wt%) a small amount of sintering aid, such as boron and free carbon.Above-mentioned raw materials are mixed with slurry, through making
Composite material is prepared in grain, dry-pressing, unsticking, firing.Carborundum granularity is between 2 and 15 microns in composite material, carbon graphite
Crystal grain diameter is between 10 and 75 microns, and density is at least the 80% of theoretical density.
Silicon carbide/carbon composite ceramic body disclosed in US4692418 has highly uniform fine-grained microstructure.Containing extremely
Few 50% silicon carbide, and its grain diameter is no more than about 5 microns, the average particle size of graphite particle is less than silicon-carbide particle grain size
And it is homodisperse, and density is at least the 75% of theoretical density.By micropore green compact osmosis in about 1900 DEG C of inert atmospheres or
It is made under sintering temperature in vacuum.
The invention discloses a carbon-graphite/silicon carbide compound products by US 5968653.In a preferred embodiment, it is compound
Product includes fine and close silicon carbide body, two gap areas：(1) compacted zone containing abundant metallic silicon and (2) one small
Silicon carbide/metal/carbon-graphite linings and carbon-graphite body.
The object of the carbon-graphite of above-mentioned preparation/silicon carbide compound product or silicon carbide/carbon composite ceramic body material is mutually carbonization
Silicon, graphite and/or carbon, consistency be not high.And the electric conductivity of carbon phase is less than graphite, and low consistency causes in material greatly
The stomata of amount exists, and the two collective effect can reduce the electrically and thermally performance of material.
Invention content
In view of the above-mentioned problems, it is prepared the object of the present invention is to provide a kind of with low-resistivity, linear resistance and height
Silicon carbide/graphite composite material of thermal conductivity feature, preparation method and the thermal conductivity and electric property that adjust silicon carbide
Method.
On the one hand, the present invention provides silicon carbide/graphite composite materials, and the silicon carbide/graphite composite material is by being carbonized
Silicon phase and the graphite phase composition changed in sintering process by carbon phase, without third phase substance, the content of the graphite-phase
For 10-20wt%, the thermal conductivity of the silicon carbide/graphite composite material is 110-160Wm-1·K-1, dc resistivity 10
~750 Ω cm and not with voltage change, AC resistance modulus value is 0.5~45 Ω and does not change with frequency.
The composite material only silicon carbide-containing and graphite-phase of the present invention, without third phase substance, by adjusting containing for graphite-phase
Amount can obtain with highly thermally conductive property, low-resistivity, linear resistance property silicon carbide/graphite composite material.
Preferably, the relative density of the silicon carbide/graphite composite material is more than 90%.
On the other hand, the present invention provides a kind of method for preparing above-mentioned composite material, including：
Biscuit is made in silicon carbide and the molding of the mixed powder of carbon source, wherein the carbon source is amorphous carbon and thermosetting property phenol
The mixture of urea formaldehyde；And
By gained biscuit of ceramics at 800~1200 DEG C unsticking after being sintered 1 at 2150~2250 DEG C in argon gas atmosphere
~3 hours so that carbon phase is changed into graphite-phase and obtains the silicon carbide/graphite composite material.
The thermosetting phenolic resin of the addition of the present invention as carbon source but also can play the role of binding agent, without additional
Add binding agent.
In addition, the present invention is carbon source by introducing carbon using organic carbon source (for example, thermosetting phenolic resin) and agraphitic carbon,
By adjusting the content of total carbon source, carbon phase is made to be completely reformed into graphite-phase by sintering process control, composite material is made only to include
Carborundum phase and graphite-phase two-phase.Wherein, the nano-sized carbon generated in its cracking process of the organic carbon source of addition has high reaction
Activity conducive to silicon carbide silica is quickly removed under lower temperature, has a clear superiority in terms of material sintering densification,
And realize densification sintering.The inorganic carbon source of addition is hindering carborundum grain to grow up with significant advantage, realizes silicon carbide
The low-resistivity of sill, linear resistance, high heat conductance are expected to be applied to battery module and other field.
Preferably, the rate of charge of amorphous carbon and thermosetting phenolic resin is (7~17) g：10ml.
Another aspect, the present invention provide a kind of method for the thermal conductivity and electric property for adjusting silicon carbide, the method packet
Include using silicon carbide and the mixed powder of carbon source as raw material, be molded be made biscuit at 800~1200 DEG C unsticking after argon gas atmosphere
In be sintered 1~3 hour at 2150~2250 DEG C so that carbon phase be changed into after graphite-phase with silicon carbide compound, by controlling carbon source
Additive amount and carbon source type adjust silicon carbide thermal conductivity and electric property.
Preferably, the present invention is using the mixture of thermosetting phenolic resin or amorphous carbon and thermosetting phenolic resin as carbon
Source, the additive amount for controlling carbon source is 10~20wt% and the rate of charge of amorphous carbon and thermosetting phenolic resin is (7~17) g：
10ml so that the thermal conductivity of silicon carbide in 110-160Wm-1·K-1Between it is adjustable, dc resistivity for 10~750 Ω cm it
Between it is adjustable.
Description of the drawings
Fig. 1 is the shape appearance figure of SiC/ graphite composite materials that graphite-phase content prepared by embodiment 1 is 10wt%；
Fig. 2 is the SiC/ stones that graphite-phase content prepared by embodiment 1,2,5 is respectively 10wt%, 15wt% and 20wt%
The electric property figure of black composite material；
Fig. 3 is the shape appearance figure of SiC/ graphite composite materials that phosphorus content prepared by embodiment 2 is 15wt%；
Fig. 4 is the SiC/ graphite composite material shape appearance figures that phosphorus content prepared by embodiment 3 is 20wt%；
Fig. 5 is the shape appearance figure of SiC/ graphite composite materials that phosphorus content prepared by embodiment 4 is 20wt%；
Fig. 6 is the SiC/ graphite composite materials that the phosphorus content of different carbon source ratio prepared by embodiment 4 and 6 is 20wt%
Electric property figure；
Fig. 7 is the shape appearance figure of SiC/ graphite composite materials that phosphorus content prepared by embodiment 5 is 20wt%；
Fig. 8 is the shape appearance figure of SiC/ graphite composite materials that phosphorus content prepared by embodiment 6 is 20wt%；
Fig. 9 is the XRD spectrum of SiC/ graphite composite materials that phosphorus content prepared by embodiment 6 is 20wt%.
Specific embodiment
It being further illustrated the present invention below in conjunction with embodiment, it should be appreciated that following embodiments are merely to illustrate the present invention,
It is not intended to limit the present invention.
The present invention as raw material and passes through adjusting phosphorus content using amorphous carbon, thermosetting phenolic resin and silicon carbide, through batch mixing,
Obtain silicon carbide/graphite composite material after molding, unsticking, sintering, the silicon carbide/graphite composite material include carborundum phase and
The graphite-phase changed in sintering process by carbon phase, the content of the graphite-phase can be 10-20wt%.Because in sintering process
In graphite-phase is transformed by generation carbon source, it is identical with the content of graphite-phase to belong to carbon source content (can also claim phosphorus content).
Illustrate to following exemplary the preparation method of silicon carbide/graphite composite material provided by the invention.
The present invention is using silicon carbide powder, amorphous carbon powder, thermosetting phenolic resin by proportioning in water or absolute ethyl alcohol
In solvent, it is sufficiently mixed (for example, being mixed by ball mill or sand mill) by ball milling and prepares ceramic slurry.It is wherein amorphous
Toner body and thermosetting phenolic resin are 10-20% as the content of carbon that compounded carbons can generate.Thermosetting phenolic resin is also
It can serve when powder is molded as binding agent and bond powder, there is no need to additionally add binding agent.There is thermosetting phenolic tree
The additive amount of fat, Pintsch process carbon content can be that (silicon carbide powder, amorphous carbon powder, organic carbon source are total for powder gross mass
Quality) 1-20wt%, account for the 5-100wt% of compounded carbons.Wherein solvent can be water or absolute ethyl alcohol, and ceramics are made after mixing
Slurry.
Ceramic slurry is directly dried to (for example, 12 hours dry at 60 DEG C in baking oven again) again or mist projection granulating prepares pottery
Porcelain powder.
By ceramic powder it is ground, sieving after again by dry-pressing formed and/or isostatic pressing or casting, made pottery
Porcelain biscuit.The molding mode of the present invention is chosen as dry-pressing formed and/or isostatic pressing or direct casting.As one
A example, ceramic powder is polished, it crosses 60 mesh and sieves, it is dry-pressing formed under 40MPa, it is multiple for going out by 200MPa isostatic pressings
Condensation material biscuit.
First by biscuit of ceramics through unsticking.It is placed on again in certain sintering atmosphere (for example, argon gas) at 2150~2250 DEG C
Sintering obtains silicon carbide/graphite composite material in 1~3 hour.Wherein the atmosphere of unsticking can be vacuum, and the temperature of unsticking can be 800
~1200 DEG C.
The direct current of silicon carbide/graphite composite material of the invention prepared is measured through 2450 instrument for measuring DC resistance of Keithley
Values of resistivity with voltage change, does not have linear characteristic, resistivity value ranging from 10~750 Ω cm.
The friendship of silicon carbide/graphite composite material of the invention prepared is measured through Agilent E4990A precise impedance analyzers
Galvanic electricity resistance value does not change with a-c cycle, has linear character, resistance modulus value ranging from 0.5~45 Ω.
Measuring the thermal conductivity of silicon carbide/graphite composite material of the invention prepared through NETZSCH LFA447 instruments can be
110-160W·m-1·K-1。
It is 300~446MPa to measure the flexural strength of composite material of the invention prepared through Instron 1195.It is relatively close
Degree reaches more than 90%.
Embodiment is enumerated further below so that the present invention will be described in detail.It will similarly be understood that following embodiment is served only for this
Invention is further described, it is impossible to be interpreted as limiting the scope of the invention, those skilled in the art is according to this hair
Some nonessential modifications and adaptations that bright the above is made all belong to the scope of protection of the present invention.Following examples are specific
Technological parameter etc. is also only an example in OK range, i.e. those skilled in the art can be done properly by the explanation of this paper
In the range of select, and do not really want to be defined in hereafter exemplary concrete numerical value.
Embodiment 1
By 90g silicon carbide, 7g amorphous carbon and 10ml thermosetting phenolic resins, (its Pintsch process carbon content is powder total amount
3.0wt%) etc. raw materials be sufficiently mixed uniformly by planetary ball mill in absolute ethyl alcohol, prepare slurry, in an oven 60
DEG C dry 12h.It is polished, cross 60 mesh sieve, it is dry-pressing formed under 40MPa, by 200MPa isostatic pressings it is standby go out composite material
Biscuit.Under vacuum, through 800 DEG C of unstickings, the green body after unsticking is under the conditions of argon gas, warp for the composite material biscuit of preparation
2150 DEG C of heat preservations are burnt into for 1 hour.Composite material (number 10C90SiC marks " 1 " referring in Fig. 2) fine and close, microcosmic knot of preparation
Structure is uniform, flexural strength be 446.8 ± 83.1MPa, relative density 99.5%, thermal conductivity 154.02Wm-1·K-1, directly
Leakage resistance rate is 705 Ω cm, and AC resistance modulus value is 45 Ω.Specific pattern is shown in Fig. 1, and ac impedance spectroscopy Bode figures are shown in Fig. 2.
Embodiment 2
By 85g silicon carbide, 12g amorphous carbon and 10ml thermosetting phenolic resins, (its Pintsch process carbon content is total for powder
The 3.0wt% of amount) etc. raw materials be sufficiently mixed uniformly by planetary ball mill in absolute ethyl alcohol, prepare slurry, in an oven
60 DEG C of dry 12h.It is polished, cross 60 mesh sieve, it is dry-pressing formed under 40MPa, by 200MPa isostatic pressings it is standby go out composite wood
Expect biscuit.Under vacuum, through 900 DEG C of unstickings, the green body after unsticking is under the conditions of argon gas, warp for the composite material biscuit of preparation
2200 DEG C of heat preservations are burnt into for 1 hour.Composite material (number 15C85SiC marks " 2 " referring in Fig. 2) fine and close, microcosmic knot of preparation
Structure is uniform, flexural strength be 368.1 ± 79.6MPa, relative density 93.6%, thermal conductivity 132.20Wm-1·K-1, directly
Leakage resistance rate is 63.04 Ω cm, and AC resistance modulus value is 1.76 Ω.Specific pattern is shown in Fig. 3, and ac impedance spectroscopy Bode figures are shown in figure
2。
Embodiment 3
By 80g silicon carbide, 17g amorphous carbon and 10ml thermosetting phenolic resins, (its Pintsch process carbon content is total for powder
The 3.0wt% of amount) etc. raw materials be sufficiently mixed uniformly by planetary ball mill in absolute ethyl alcohol, prepare slurry, in an oven
60 DEG C of dry 12h.It is polished, cross 60 mesh sieve, it is dry-pressing formed under 40MPa, by 200MPa isostatic pressings it is standby go out composite wood
Expect biscuit.The composite material biscuit of preparation under vacuum, through 1000 DEG C of unstickings, the green body after unsticking under the conditions of argon gas,
It is burnt within 1 hour through 2200 DEG C of heat preservations.The composite material (number 3R17C80SiC) of preparation is fine and close, and microstructure is uniform, and anti-folding is strong
It spends for 306.2 ± 60.1MPa, relative density 90.7%, thermal conductivity 110.80Wm-1K-1, dc resistivity 30
Ω cm, AC resistance modulus value are 1.10 Ω.Specific pattern is shown in Fig. 4, and ac impedance spectroscopy Bode figures are shown in Fig. 2.
Embodiment 4
By 80g silicon carbide, 14g amorphous carbon and 20ml thermosetting phenolic resins, (its Pintsch process carbon content is total for powder
The 6.0wt% of amount) etc. raw materials be sufficiently mixed uniformly by planetary ball mill in absolute ethyl alcohol, prepare raw material powder through mist projection granulating
Body, it is dry-pressing formed under 40MPa, by 200MPa isostatic pressings it is standby go out composite material biscuit.The composite material biscuit of preparation exists
Under vacuum condition, through 1200 DEG C of unstickings, the green body after unsticking is burnt into for 1.5 hours under the conditions of argon gas through 2250 DEG C of heat preservations.It prepares
Composite material (number 6R14C80SiC marks " 2 " referring in Fig. 6) it is fine and close, microstructure is uniform, and thermal conductivity is
103.78W·m-1·K-1, dc resistivity is 2.23 Ω cm, and AC resistance modulus value is about 1.4 Ω.Specific pattern is shown in Fig. 5,
Ac impedance spectroscopy Bode figures are shown in Fig. 6.
Embodiment 5
By 80g silicon carbide, 68ml thermosetting phenolic resins (its Pintsch process carbon content is the 20wt% of powder total amount) etc.
Raw material is sufficiently mixed uniformly in absolute ethyl alcohol by planetary ball mill, and material powder is prepared through mist projection granulating.Dry-pressing under 40MPa
Molding, by 200MPa isostatic pressings it is standby go out composite material biscuit.The composite material biscuit of preparation under vacuum, passes through
1200 DEG C of unstickings, the green body after unsticking are burnt into for 1 hour under the conditions of argon gas through 2200 DEG C of heat preservations.Composite material (the number of preparation
20R80SiC marks " 3 " referring in Fig. 2) it is fine and close, microstructure is uniform, thermal conductivity 115.20Wm-1·K-1, D.C. resistance
Rate is 3.76 Ω cm, and AC resistance modulus value is about 1.5 Ω.Specific pattern is shown in Fig. 7.
Embodiment 6
By 80g silicon carbide, 19g amorphous carbon and 3.3ml (its Pintsch process carbon content is the 1.0wt% of powder total amount) etc.
Raw material is sufficiently mixed uniformly in absolute ethyl alcohol by planetary ball mill, prepares slurry, in an oven 60 DEG C of dry 12h.Through
After grinding, cross 60 mesh sieve, it is dry-pressing formed under 40MPa, by 200MPa isostatic pressings it is standby go out composite material biscuit.What is prepared answers
Under vacuum, through 1200 DEG C of unstickings, the green body after unsticking is under the conditions of argon gas, through 2250 DEG C of heat preservations 1.5 for condensation material biscuit
Hour firing.The composite material (number 1R19C80SiC marks " 1 " referring in Fig. 6) of preparation is fine and close, and microstructure is uniform, heat
Conductance is 93.5Wm-1·K-1, dc resistivity is 3.78 Ω cm, and AC resistance modulus value is about 0.3 Ω.Specific pattern is shown in
Fig. 8, ac impedance spectroscopy Bode figures are shown in Fig. 6, and XRD spectrum is shown in Fig. 9；
Table 1
Fig. 1, Fig. 3, Fig. 4 distinguish the pattern of identical organic carbon source content and the SiC/ graphite composite materials of different total phosphorus content
Figure, the carbon content of organic carbon source Pintsch process account for the 3wt% of total powder, but total carbon source account for respectively total powder for 10wt%,
15wt%, 20wt% are incremental.By figure comparison it is found that all samples it is microcosmic uniformly, graphite-phase is evenly distributed in
In silicon carbide substrate, and as the increase of total carbon content is (that is, the increasing of agraphitic carbon content certain in organic carbon source
Add), material silicon carbide crystallite dimension reduces, and microcosmic stomata has increased slightly.
Fig. 8, Fig. 4, Fig. 5, Fig. 7 are respectively that total phosphorus content of different carbon source ratio is all the SiC/ graphite composite woods of 20wt%
The shape appearance figure of material, organic carbon source Pintsch process carbon content account for total carbon source ratio be respectively 5wt%, 15wt%, 30wt%,
100wt%, it is known that with the increase of organic carbon source Pintsch process carbon content ratio, the inorganic carbon of the bulky grain of addition
Source reduces,
The microstructure of material is more uniform, and consistency is stepped up.
Fig. 2 be phosphorus content 10-20wt% SiC/ graphite composite materials electric property figure, from table 1 and Fig. 2 it is found that with
The increase of carbon content, the AC impedance modulus value of material reduce, i.e., the resistivity of material reduces, and its modulus value is not with test frequency
(it is less than 107) increase and change.
Fig. 6 is that the SiC/ graphite of phosphorus content all 20wt% of different carbon source ratio prepared by embodiment 4 and embodiment 6 is compound
The electric property figure of material from table 1 and Fig. 6 it is found that under the conditions of identical graphite additive amount, increases, material with organic carbon source content
AC impedance modulus value have increased slightly.
Fig. 9 is the XRD spectrum of SiC/ graphite composite materials that phosphorus content prepared by embodiment 6 is 20wt%, as can be seen from Figure 9
SiC/ graphite composite materials prepared by the present invention are by two phase composition of carborundum phase and graphite-phase, and no other objects mutually exist.
Claims (4)
1. a kind of silicon carbide/graphite composite material, which is characterized in that the silicon carbide/graphite composite material by carborundum phase and
The graphite phase composition changed in sintering process by carbon phase, without third phase substance, the content of the graphite-phase is 10-
20wt%, the thermal conductivity of the silicon carbide/graphite composite material is 110-160Wm-1·K-1, dc resistivity is 10~750
Ω cm and not with voltage change, AC resistance modulus value is 0.5~45 Ω and does not change with frequency.
2. silicon carbide/graphite composite material according to claim 1, which is characterized in that the silicon carbide/graphite composite wood
The relative density of material is more than 90%.
A kind of 3. preparation method of silicon carbide/graphite composite material described in claims 1 or 2, which is characterized in that the preparation
Method includes：
Biscuit is made in silicon carbide and the molding of the mixed powder of carbon source, wherein the carbon source is amorphous carbon and thermosetting phenolic tree
The mixture of fat；And
By gained biscuit of ceramics, unsticking is small after being sintered 1~3 in argon gas atmosphere at 2150~2250 DEG C at 800~1200 DEG C
When so that carbon phase is changed into graphite-phase and obtains the silicon carbide/graphite composite material.
4. preparation method according to claim 3, which is characterized in that the rate of charge of amorphous carbon and thermosetting phenolic resin
For（7~17）g：10ml.
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| CN107721431A (en) * | 2017-10-31 | 2018-02-23 | 湖南国盛石墨科技有限公司 | The application of spent FCC catalyst and preparation and its application using spent FCC catalyst as graphite/ceramic matric composite of raw material |
| CN107673750A (en) * | 2017-11-15 | 2018-02-09 | 石婷 | A kind of 3D glass bendings shaping ceramic die and method |
| CN109534834B (en) * | 2018-08-08 | 2020-05-26 | 中国科学院化学研究所 | Ceramizable phenolic resin and preparation method and application thereof |
| CN111004034B (en) * | 2019-12-25 | 2021-11-12 | 深圳市商德先进陶瓷股份有限公司 | Silicon carbide ceramic, method for producing same, and semiconductor component |
| CN111320478B (en) * | 2020-03-27 | 2022-02-11 | 有研资源环境技术研究院(北京)有限公司 | Preparation method of carbon-silicon ceramic target material |
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