JPH0648860Y2 - Jig for semiconductor wafer - Google Patents
Jig for semiconductor waferInfo
- Publication number
- JPH0648860Y2 JPH0648860Y2 JP7933785U JP7933785U JPH0648860Y2 JP H0648860 Y2 JPH0648860 Y2 JP H0648860Y2 JP 7933785 U JP7933785 U JP 7933785U JP 7933785 U JP7933785 U JP 7933785U JP H0648860 Y2 JPH0648860 Y2 JP H0648860Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- type
- jig
- molten
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Ceramic Products (AREA)
- Furnace Charging Or Discharging (AREA)
Description
【考案の詳細な説明】 （産業上の利用分野） 本考案は半導体素子の製造に用いられる炭化珪素（以下
SiCという）を素材とした半導体ウエハ用治具に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial field of application) The present invention relates to silicon carbide (hereinafter
SiC) is a material for semiconductor wafer jigs.
（従来の技術） 炭素粉と珪石粉を焼結して得られるSiCは多孔質であ
り、高強度で熱伝導性が良いという利点を有している。
このため、SiCは、半導体Siウエハの酸化や拡散工程に
おける治具、例えば半導体ウエハボート等として使用さ
れている。（なお、従来のセラミック多孔質体はα型Si
Cと呼ばれ、その気孔は不均一に分布している）。そし
て、この種の半導体ウエハボートはFe,Al等の金属不純
物を比較的多く含有するため、例えば、前記SiCの気孔
部に金属Siを約1600℃の高温で含浸させ、その析出を防
止するようにしたものが一般に用いられている。この種
の半導体ウエハ用治具としては、例えば特開昭53−1421
83号公報に示されたものがある。ところが、上記の製造
法によって得られる治具は、SiC自体が抵抗体として利
用されているように、102〜105Ω・cmという比較的大き
な抵抗値を有する。また、同時に含浸される高純度Siは
真性半導体であり、含浸後の比抵抗は104〜105Ω・cmの
値を示す。(Prior Art) SiC obtained by sintering carbon powder and silica stone powder is porous and has the advantages of high strength and good thermal conductivity.
For this reason, SiC is used as a jig in the process of oxidizing and diffusing a semiconductor Si wafer, such as a semiconductor wafer boat. (Note that conventional ceramic porous bodies are α-type Si
Called C, the pores are unevenly distributed). Since this type of semiconductor wafer boat contains a relatively large amount of metallic impurities such as Fe and Al, for example, the pores of the SiC are impregnated with metallic Si at a high temperature of about 1600 ° C. to prevent its precipitation. Those that have been used are generally used. As a jig for this type of semiconductor wafer, for example, JP-A-53-1421
There is one disclosed in Japanese Patent No. 83. However, the jig obtained by the above manufacturing method has a relatively large resistance value of 10 2 to 10 5 Ω · cm, as SiC itself is used as a resistor. High-purity Si that is impregnated at the same time is an intrinsic semiconductor, and the specific resistance after impregnation shows a value of 10 4 to 10 5 Ω · cm.
（考案が解決しようとする問題点） このように、炭素粉と珪石粉とを焼結して得られたSiC
に、金属Siを含浸させた素材を用いて製造される従来の
半導体ウエハ用治具は、高強度で熱伝導性に優れるとい
う利点を有するが、電気抵抗が高いために、半導体ウエ
ハに帯電した静電気を速やかに除去できないといった問
題があった。(Problems to be solved by the invention) Thus, SiC obtained by sintering carbon powder and silica powder
In addition, the conventional semiconductor wafer jig manufactured using a material impregnated with metallic Si has the advantages of high strength and excellent thermal conductivity, but due to its high electrical resistance, the semiconductor wafer was charged. There was a problem that static electricity could not be removed quickly.
本考案は、上記問題点を除去するために、電気抵抗を低
くして、半導体ウエハに帯電する静電気を適切に除去可
能な半導体ウエハ用治具を提供することを目的とする。SUMMARY OF THE INVENTION In order to eliminate the above problems, an object of the present invention is to provide a jig for a semiconductor wafer which has a low electric resistance and can appropriately remove static electricity charged on the semiconductor wafer.
（問題点を解決するための手段） 本考案は、上記目的を達成するために、半導体ウエハ用
治具において、珪素と炭素粉、或いは炭化珪素粉を焼結
してなるβ型多孔質SiC焼結体を、Ｐ型又はＮ型不純物
を原子量1014〜1020個／cm3の濃度で混入してなる溶融S
i中に浸し、前記β型多孔質SiC焼結体の気孔率５〜50％
の気孔部に前記溶融Siを充填した素材で構成するように
したものである。(Means for Solving the Problems) In order to achieve the above object, the present invention provides a β-type porous SiC sintered product obtained by sintering silicon and carbon powder or silicon carbide powder in a semiconductor wafer jig. Molten S obtained by mixing P-type or N-type impurities in a concentration of 10 14 to 10 20 atoms / cm 3
Immersed in i, the porosity of the β-type porous SiC sintered body is 5 to 50%
It is made of a material in which the molten Si is filled in the pores of the.
（作用） 本考案に係るβ型多孔質SiC焼結体を素材とした半導体
ウエハ用治具は、高強度で熱伝導性が良いのに加えて、
電気抵抗が小さく、半導体ウエハに帯電する静電気を適
切に除去することができる。(Operation) In addition to the high strength and good thermal conductivity, the jig for semiconductor wafers made of the β-type porous SiC sintered body according to the present invention is
The electric resistance is small, and the static electricity charged on the semiconductor wafer can be appropriately removed.
（実施例） 以下、本考案の実施例を図面を参照しながら詳細に説明
する。(Embodiment) Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.
第１図は本考案に係る半導体ウエハ用治具の素材の拡大
構造図、第２図はこの素材を用いた半導体ウエハ用治具
の原型の斜視図、第３図は本考案に係る素材である多孔
質SiC焼結体の拡大構造図である。FIG. 1 is an enlarged structural view of a material for a semiconductor wafer jig according to the present invention, FIG. 2 is a perspective view of a prototype of a semiconductor wafer jig using this material, and FIG. 3 is a material according to the present invention. FIG. 3 is an enlarged structural diagram of a porous SiC sintered body.
図中、１は焼結された多孔質SiCバーであり、このバー
の長さは約100μｍ、２は多孔質SiC焼結体の気孔部であ
り、気孔径は約100μｍ〜200μｍ、３はＰ型又はＮ型不
純物を含む溶融Si充填部である。In the figure, 1 is a sintered porous SiC bar, the length of this bar is about 100 μm, 2 is the pore portion of the porous SiC sintered body, and the pore diameter is about 100 μm to 200 μm, 3 is P It is a molten Si filling part containing a type or N type impurity.
まず、この多孔質SiC焼結体の構成とその特徴について
説明する。First, the structure and characteristics of this porous SiC sintered body will be described.
ここで、多孔質SiC焼結体として、例えば、『イビセラ
ム』（商品名、イビデン株式会社製）を用いることがで
きるので、これについて説明する。Here, as the porous SiC sintered body, for example, “Ivicelam” (trade name, manufactured by Ibiden Co., Ltd.) can be used, which will be described.
この焼結体は、高純度β型炭化珪素を基材として加圧形
成法や常圧鋳型形成法によって、第２図に示されるよう
な原型４を形成し、1800℃〜1900℃の高温で焼結させて
製造される。これは、前記したα型炭化珪素を用いた、
例えば特開昭53−142183号公報に示されるものとは相違
し、第３図に示されるように、β型微粉末の持つ焼結特
性を生かし、板状結晶が複雑に絡み合った均一な三次元
網目構造を有している点に大きな特徴を有している。This sintered body is formed into a prototype 4 as shown in FIG. 2 by a pressure forming method or an atmospheric pressure template forming method using high-purity β-type silicon carbide as a base material, and is heated at a high temperature of 1800 ° C to 1900 ° C. It is manufactured by sintering. This uses the α-type silicon carbide described above,
For example, unlike the one shown in Japanese Patent Laid-Open No. 53-142183, as shown in FIG. 3, by utilizing the sintering characteristics of the β-type fine powder, a uniform tertiary structure in which plate crystals are intricately entangled The main feature is that it has an original mesh structure.
その他に、従来のセラミック多孔質体に比べて、 （１）強度と耐熱性（1600℃まで使用可）に優れてい
る。In addition, it is superior in (1) strength and heat resistance (usable up to 1600 ℃) compared to conventional ceramic porous bodies.
（２）化学的に安定であり、汚染がない。(2) Chemically stable and free from pollution.
（３）用途に応じて、気孔径、気孔率或いは比表面積を
広範囲に製造することが可能である。(3) It is possible to produce a wide range of pore diameter, porosity or specific surface area depending on the application.
（４）各種任意形状の製品の製造が可能である。(4) It is possible to manufacture products of various arbitrary shapes.
といった特徴を有する。It has such characteristics.
このようなβ型炭化珪素を基材としたものは、上記した
ように、熱的、化学的に極めて安定なため、各種溶融金
属の濾過、バブリング材あるいは苛酷な条件下における
フィルタとして用いられているが、半導体ウエハ用治具
としては利用されていない。そして、上記した多孔質Si
C焼結体においては、Fe,Al等の金属不純物濃度が多く、
また各種ガスが気孔中に侵入するため焼結後1500℃〜16
00℃の高純度溶融Si中に浸し、気孔中にSiを充填させる
方法が用いられる。しかし、単なる高純度溶融Siによっ
て充填したのでは、充填後の比抵抗が104〜105Ω・cmと
比較的高い抵抗を示すことになる。As described above, such a material using β-type silicon carbide as a base material is extremely stable thermally and chemically, and therefore is used as a filter for various molten metals, as a bubbling material, or as a filter under severe conditions. However, it is not used as a jig for semiconductor wafers. And the above-mentioned porous Si
In the C sintered body, the concentration of metal impurities such as Fe and Al is high,
Also, since various gases penetrate into the pores, 1500 ° C ~ 16 ° C after sintering
A method of immersing Si in high-purity molten Si at 00 ° C to fill the pores with Si is used. However, if it is simply filled with high-purity molten Si, the specific resistance after filling is as high as 10 4 to 10 5 Ω · cm.
そこで、本考案においては、この溶融Si中にＢ等のＰ型
不純物、又はP,As,Sb等のＮ型不純物を原子量（ここで
は分子量と同じ）1014〜1020個／cm3の濃度で混入する
ことにより、その電気抵抗を100〜0.0001Ω・cmと大幅
に低下させるようにする。このような方法で上記不純物
を混入させた溶融Siを、気孔部２に充填した状態を示し
たのが第１図であり、この場合、多孔質SiC焼結体の気
孔部２の気孔率は、それ自体の強度が弱くならないよう
にするとともに、不純物を含んだ充填される溶融Siの付
着を確実にするために５〜50％が望ましい。Therefore, in the present invention, P-type impurities such as B or N-type impurities such as P, As and Sb are contained in the molten Si at an atomic weight (here, the same as the molecular weight) of 10 14 to 10 20 / cm 3 . The electrical resistance of 100 to 0.0001 Ω · cm can be greatly reduced by mixing in. FIG. 1 shows the state in which the pores 2 are filled with the molten Si mixed with the impurities by such a method. In this case, the porosity of the pores 2 of the porous SiC sintered body is , 5 to 50% is desirable in order not to weaken the strength of itself and to ensure the adhesion of the molten Si filled with impurities.
また、Ｐ型又はＮ型不純物を含む溶融Siの充填は、通常
のウエハ製造技術、例えば高周波加熱によって不純物を
添加させてインゴットを作製するような技術と同様の技
術を用いて実施することができる。Further, the filling of molten Si containing P-type or N-type impurities can be carried out by using a normal wafer manufacturing technique, for example, a technique similar to the technique of adding impurities by high-frequency heating to produce an ingot. .
なお、本考案は上記実施例に限定されるものではなく、
本考案の趣旨に基づいて種々の変形が可能であり、これ
らを本考案の範囲から排除するものではない。The present invention is not limited to the above embodiment,
Various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
（考案の効果） 以上、詳細に説明したように、本考案によれば、珪素と
炭素粉、或いは炭化珪素粉を焼結してなるβ型多孔質Si
C焼結体を、Ｐ型又はＮ型不純物を原子量1014〜1020個
／cm3の濃度で混入してなる溶融Si中に浸し、前記β型
多孔質SiC焼結体の気孔率５〜50％の気孔部に前記溶融S
iを充填した素材からなる半導体ウエハ用治具を得るよ
うにしたので、高強度で熱伝導性が良いのに加えて、半
導体ウエハ用治具の電気抵抗を小さくすることができ、
半導体ウエハに帯電する静電気を適切に除去することが
できる。(Effect of the Invention) As described in detail above, according to the present invention, β-type porous Si obtained by sintering silicon and carbon powder or silicon carbide powder.
The C sintered body is dipped in molten Si obtained by mixing P-type or N-type impurities in a concentration of 10 14 to 10 20 atoms / cm 3 , and the porosity of the β-type porous SiC sintered body is 5 to 5. The melted S in 50% of the pores
Since a semiconductor wafer jig made of a material filled with i is obtained, in addition to having high strength and good thermal conductivity, the electric resistance of the semiconductor wafer jig can be reduced,
The static electricity charged on the semiconductor wafer can be appropriately removed.
このように半導体ウエハ用治具の電気抵抗を小さくでき
るため、半導体ウエハの搭載用ボートは言うに及ばず、
半導体ウエハの搬送用治具、プラズマCVD等の電極とし
ても使用することができ、その適用範囲を拡大すること
ができる。Since the electric resistance of the semiconductor wafer jig can be reduced in this way, not to mention the semiconductor wafer mounting boat,
It can also be used as a jig for carrying semiconductor wafers, as an electrode for plasma CVD, etc., and its application range can be expanded.
【図面の簡単な説明】 第１図は本考案に係る半導体ウエハ用治具の素材の拡大
構造図、第２図は本考案に係る半導体ウエハ用治具の原
型の斜視図、第３図は本考案に係る多孔質SiC焼結体の
拡大構造図である。 １……SiCバー、２……気孔部、３……Ｐ型又はＮ型溶
融Si充填部、４……半導体ウエハ用治具の原型。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is an enlarged structural view of a material of a semiconductor wafer jig according to the present invention, FIG. 2 is a perspective view of a prototype of a semiconductor wafer jig according to the present invention, and FIG. 1 is an enlarged structural diagram of a porous SiC sintered body according to the present invention. 1 ... SiC bar, 2 ... pores, 3 ... P-type or N-type molten Si filling part, 4 ... prototype of semiconductor wafer jig.
Claims (1)
てなるβ型多孔質SiC焼結体を、Ｐ型又はＮ型不純物を
原子量1014〜1020個／cm3の濃度で混入してなる溶融Si
中に浸し、前記β型多孔質SiC焼結体の気孔率５〜50％
の気孔部に前記溶融Siを充填した素材からなることを特
徴とする半導体ウエハ用治具。1. A β-type porous SiC sintered body obtained by sintering silicon and carbon powder or silicon carbide powder at a concentration of 10 14 to 10 20 P-type or N-type impurities / cm 3 . Molten Si formed by mixing
Immersed in the above, the porosity of the β type porous SiC sintered body is 5 to 50%
A jig for a semiconductor wafer, which is made of a material in which the molten Si is filled in the pores of the semiconductor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7933785U JPH0648860Y2 (en) | 1985-05-29 | 1985-05-29 | Jig for semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7933785U JPH0648860Y2 (en) | 1985-05-29 | 1985-05-29 | Jig for semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61197498U JPS61197498U (en) | 1986-12-09 |
| JPH0648860Y2 true JPH0648860Y2 (en) | 1994-12-12 |
Family
ID=30624156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7933785U Expired - Lifetime JPH0648860Y2 (en) | 1985-05-29 | 1985-05-29 | Jig for semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0648860Y2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009078605A3 (en) * | 2007-12-14 | 2010-07-22 | Worldex Industry & Trading Co., Ltd. | SIC MATERIAL COMPRISING COMBINATION OF α-SIC AND β-SIC AND TWO-PART PLASMA CHAMBER CATHODE MANUFACTURED USING THE SAME |
| US8834520B2 (en) | 2007-10-10 | 2014-09-16 | Wake Forest University | Devices and methods for treating spinal cord tissue |
| US9289193B2 (en) | 2008-07-18 | 2016-03-22 | Wake Forest University Health Sciences | Apparatus and method for cardiac tissue modulation by topical application of vacuum to minimize cell death and damage |
| US9737455B2 (en) | 2007-01-10 | 2017-08-22 | Wake Forest Univeristy Health Sciences | Apparatus and method for wound treatment employing periodic sub-atmospheric pressure |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2507213Y2 (en) * | 1989-02-28 | 1996-08-14 | 京セラ株式会社 | Vacuum suction board for semiconductor wafer processing and measurement |
-
1985
- 1985-05-29 JP JP7933785U patent/JPH0648860Y2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9737455B2 (en) | 2007-01-10 | 2017-08-22 | Wake Forest Univeristy Health Sciences | Apparatus and method for wound treatment employing periodic sub-atmospheric pressure |
| US8834520B2 (en) | 2007-10-10 | 2014-09-16 | Wake Forest University | Devices and methods for treating spinal cord tissue |
| WO2009078605A3 (en) * | 2007-12-14 | 2010-07-22 | Worldex Industry & Trading Co., Ltd. | SIC MATERIAL COMPRISING COMBINATION OF α-SIC AND β-SIC AND TWO-PART PLASMA CHAMBER CATHODE MANUFACTURED USING THE SAME |
| US9289193B2 (en) | 2008-07-18 | 2016-03-22 | Wake Forest University Health Sciences | Apparatus and method for cardiac tissue modulation by topical application of vacuum to minimize cell death and damage |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61197498U (en) | 1986-12-09 |
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