CN101503292A - Formula of direct current zinc oxide resistance chip - Google Patents

Formula of direct current zinc oxide resistance chip Download PDF

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Publication number
CN101503292A
CN101503292A CNA2009100106471A CN200910010647A CN101503292A CN 101503292 A CN101503292 A CN 101503292A CN A2009100106471 A CNA2009100106471 A CN A2009100106471A CN 200910010647 A CN200910010647 A CN 200910010647A CN 101503292 A CN101503292 A CN 101503292A
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China
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percent
formulation
resistance chip
zinc oxide
direct current
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CN101503292B (en
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张海滨
吕宏
叶立茂
郭文杰
于新江
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FUSHUN ELECTRIC PORCELAIN MANUFACTURE Co Ltd
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FUSHUN ELECTRIC PORCELAIN MANUFACTURE Co Ltd
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Abstract

The invention discloses a formulation of an AC zinc oxide resistance chip. The formulation is characterized by comprising the following additives and a main material ZnO by weight percentage: 4.0 to 4.9 percent of Bi2O3, 3.0 to 4.0 percent of Sb2O3, 0.5 to 1.0 percent of SiO2, 2.0 to 3.0 percent of Co2O3, 0.50 to 0.80 percent of Cr2O3, 0.50 to 0.80 percent of MnCO3, 0.70 to 0.90 percent of NiO, 0.03 to 0.05 percent of aluminum nitrate, 0.10 to 0.20 percent of glass dust, 0.07 to 0.10 percent of B2O3 and 85.0 to 88.0 percent of ZnO. The formulation of the resistance chip has the following characteristics and advantages: the nickel protoxide and the glass dust are introduced into the formulation, so that the stability and the aging performance of the internal structure of the resistance chip is more excellent; and 2, dosage of cobalt sesquioxide, dibismuth trioxide and diantimony trioxide are added in the formulation, the mixture ratio of each composition is more reasonable, and the non-linearity coefficient of the resistance chip can be improved, the pressure ratio is reduced, the circulation capability is improved, and the comprehensive performance is excellent.

Description

Formula of direct current zinc oxide resistance chip
One, technical field
The invention belongs to thunder arrester with resistance chip technology field, be specifically related to a kind of formula of direct current zinc oxide resistance chip, be used to make super high voltage direct current electricity transmission thunder arrester resistor disc.
Two, background technology
Zinc oxide resistance sheet was developed the earliest the sixties in 20th century, because its superior voltage-dependent characteristic, and developed rapidly, be divided into direct current and exchange two kinds according to purposes.Direct current zinc oxide resistance chip is a kind of of zinc oxide high voltage varistor sheet, is the core component of direct current zinc oxide thunder arrester, is widely used in the super high voltage direct current electricity transmission system.It is the prescription of forming based on zinc oxide and other multi-element metal oxide, and at high temperature sintering forms, and has the pellet resistance of good non-linear volt-ampere characteristic, and its performance level is restricting the grade of thunder arrester.Advantages such as the super high voltage direct current electricity transmission system is far away with its transmission distance in recent years, operation scheme is flexible obtain fast development in China's transmission system.But because the change of continuous running voltage waveform, traditional ac oxide zinc resistor disc will soon wear out under the volts DS effect, thermal runaway, can't satisfy the requirement of direct-current transmission to the resistor disc aging resistance.
Three, summary of the invention
The purpose of this invention is to provide a kind of formula of direct current zinc oxide resistance chip, the DC transmission system resistor disc that adopts this formulation to go out can satisfy the requirement of DC transmission system to resistor disc volt-ampere characteristic, various aspects of performance such as aging.
For achieving the above object, the technical solution used in the present invention is: this prescription is made up of additive and major ingredient ZnO, and each additive and ZnO weight percent are as follows: Bi 2O 3: 4.0%-4.9%; Sb 2O 3: 3.0%-4.0%; SiO 2: 0.5%-1.0%; Co 2O 3: 2.0%-3.0%; Cr 2O 3: 0.50%-0.80%; MnCO 3: 0.50%-0.80%; NiO:0.70%-0.90%; Aluminum nitrate: 0.03%-0.05%; Glass powder: 0.10%-0.20%; B 2O 3: 0.07%-0.10%; ZnO:85.0%-88.0%.
Adopt the technology of formulation resistor disc of the present invention to be: will take by weighing additive B i by weight percentage 2O 3, Sb 2O 3, SiO 2, Co 2O 3, Cr 2O 3, MnCO 3, NiO, B 2O 3And after glass powder carries out ball milling, oven dry calcination and secondary ball milling, with aluminum nitrate, wedding agent and major ingredient ZnO batch mixing, again through granulation, moisture, valve block moulding, binder removal, give operations such as burning, limit glaze coating, calcining, grinding, the coating of bismuth cream, thermal treatment, jet electrode, electrical measurement promptly.
Above-mentioned main points of processes control:
1. additive ball milling granularity: median size is not more than 1.0 μ m;
2. granulation slurry moisture: be not more than 35%;
3. granulation median size: 70-120 μ m;
4. compact density: be not less than 3.20g/cm3.
5. bismuth cream coating process: coating is got material and is adopted syringe accurately to draw.The coating position: the upper and lower end face of resistor disc, glue spread is decided according to the resistor disc specification, and weight ratio is no less than 0.32%.
The resistor disc electric parameter of formulation of the present invention:
Residual voltage ratio: residual voltage and direct current 1mA voltage ratio under the 8/20 μ s lightning impulse current;
Nonlinear factor α: α=2/log (U 1mA/ U 10 μ A);
Leakage current: direct current 0.75U 1mAFollowing leakage current;
The direct current accelerated weathering test: 115 ℃ of test temperature controls, the time is 1000h, waveform 12 pulses;
2ms rectangular wave current impact energy resistance test: 20 times;
4/10 μ s heavy current impact energy resistance test: 2 times;
Figure A200910010647D00041
Resistor disc prescription of the present invention has following characteristics and advantage:
1, introduces nickel protoxide, glass powder composition in the prescription, make resistor disc internal structure stable and uniform more, increased substantially aging resistance.Nickel protoxide has the potential barrier of adjusting bias voltage and eliminates the polar effect, has improved the stability of rush of current.Glass powder is the extremely low oxide mixture that can form glass separately of a kind of surface energy, easily generates fine and close glassy phase in sintering process, and this glassy phase moves to the surface under the effect of vapour pressure, fills because of Bi 2O 3, Sb 2O 3Volatilization and the pore that generates, it can form good engagement between crystal grain and spinel in process of cooling, has reduced grain boundary defects concentration, has the moisture absorption of preventing and changes through-flow velocity of variation, increases substantially the effect of aging resistance.
2, increase cobalt sesquioxide, bismuthous oxide bismuth trioxide, antimonous oxide consumption in the prescription, effectively raised the nonlinear factor of resistor disc, improved volt-ampere characteristic.
Four, embodiment
Embodiment 1: comprise following component and weight percent:
Bi 2O 3: 4.00%; Sb 2O 3: 3.18; SiO 2: 0.80%; Co 2O 3: 2.29%; Cr 2O 3: 0.70%; MnCO 3: 0.70%; NiO:0.80%; Aluminum nitrate: 0.05%; Glass powder: 0.14%; B 2O 3: 0.10%; ZnO:87.24%.
Embodiment 2: comprise following component and weight percent:
Bi 2O 3: 4.49%; Sb 2O 3: 3.59; SiO 2: 0.50%; Co 2O 3: 2.00%; Cr 2O 3: 0.70%; MnCO 3: 0.60%; NiO:0.70%; Aluminum nitrate: 0.05%; Glass powder: 0.14%; B 2O 3: 0.10%; ZnO:87.13%.
Embodiment 3: comprise following component and weight percent:
Bi 2O 3: 4.69%; Sb 2O 3: 3.50%; SiO 2: 0.80%; Co 2O 3: 2.50%; Cr 2O 3: 0.70%; MnCO 3: 0.70%; NiO:0.70%; Aluminum nitrate: 0.05%; Glass powder: 0.14%; B 2O 3: 0.10%; ZnO:86.12%.
Adopt the resistor disc of the foregoing description 1,2,3 described formulation, specification φ 115 * φ 38 x 20, each test parameter is as follows:
Electrical testing inspection: electrical measurement operative norm: State Standard of the People's Republic of China's " HVDC converter substation gapless metal-oxide lighting arrester guide rule ".
Volt-ampere characteristic test:
Embodiment U 10kA (kV) U 1mA (kV) U 10μA (kV) Pressure ratio α Leakage current
1 7.25 4.45 3.12 1.63 13.0 10.54
2 7.44 4.59 3.15 1.62 12.2 10.18
3 6.84 4.22 2.89 1.62 12.2 10.20
115 ℃ of 1000 hours 12 pulse accelerated weathering tests:
Embodiment U 1mA(kV) Chargeability The aging coefficient maximum value Conclusion
1 4.40 90% 0.82 Qualified
2 4.50 90% 0.75 Qualified
3 4.21 90% 0.75 Qualified
4/10 μ s heavy current impact resistance test:
Figure A200910010647D00061
The 2ms rectangular wave current impacts resistance test:
Figure A200910010647D00062
The applicant is applied to following direct current thunder arrester product according to the present invention's resistor disc of making of filling a prescription:
Y10WDB1-631/1068W
Y5WE1-145/358W
Y5WE1-40/99W
Y10WEL1-117/300W
The interchange zinc oxide resistance sheet formula system that the present invention's prescription breaks traditions adopts new component, makes that the resistor disc over-all properties is better, meets the service requirements of direct current thunder arrester, reaches leading domestic international most advanced level.

Claims (1)

1, a kind of formula of direct current zinc oxide resistance chip is made up of additive and major ingredient ZnO, it is characterized in that: each additive and zinc oxide weight percent are as follows: Bi 2O 3: 4.0%-4.9%; Sb 2O 3: 3.0%-4.0%; SiO 2: 0.5%-1.0%; Co 2O 3: 2.0%-3.0%; Cr 2O 3: 0.50%-0.80%; MnCO 3: 0.50%-0.80%; NiO:0.70%-0.90%; Aluminum nitrate: 0.03%-0.05%; Glass powder: 0.10%-0.20%; B 2O 3: 0.07%-0.10%; ZnO:85.0%-88.0%.
CN2009100106471A 2009-03-07 2009-03-07 Formula of direct current zinc oxide resistance chip Active CN101503292B (en)

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102249666A (en) * 2011-05-13 2011-11-23 中国科学院宁波材料技术与工程研究所 Method for preparing direct-current zinc oxide resistance card
CN104692790A (en) * 2013-12-04 2015-06-10 青岛润鑫伟业科贸有限公司 Novel resistor material
CN105427977A (en) * 2016-01-16 2016-03-23 国网电力科学研究院武汉南瑞有限责任公司 High-performance direct-current zinc oxide varistor and preparation process thereof
CN106518049A (en) * 2016-09-23 2017-03-22 清华大学 Manufacturing process for improving voltage gradient of zinc-oxide voltage-sensitive ceramics
CN106803449A (en) * 2016-01-16 2017-06-06 国家电网公司 A kind of Large Copacity small size high gradient ac oxide zinc resistor disc and its preparation technology
CN107705946A (en) * 2017-07-19 2018-02-16 国网湖南省电力公司 A kind of high-pass flow zinc oxide resistor sheet and its production technology
CN108238792A (en) * 2016-12-27 2018-07-03 西安天工电气有限公司 A kind of formula and its preparation process of direct current arrester valve block
CN108238790A (en) * 2016-12-27 2018-07-03 西安天工电气有限公司 A kind of formula and its preparation process of alternating-current lightning arrestor valve block
CN108929108A (en) * 2018-07-30 2018-12-04 宜宾志源高压电器有限公司 A kind of production technology measuring arrester zinc oxide resistance sheet
CN111816398A (en) * 2020-06-23 2020-10-23 上海大学 Resistor disc preparation method capable of improving high-current impact stability
CN112694324A (en) * 2020-12-14 2021-04-23 襄阳市三三电气有限公司 Zinc oxide nonlinear resistance card and preparation method thereof
CN116143511A (en) * 2022-12-30 2023-05-23 南阳金牛电气有限公司 Preparation method of zinc oxide resistor disc with low voltage ratio and high current capacity
CN116655368A (en) * 2023-05-26 2023-08-29 嘉兴瑞嘉电气股份有限公司 Preparation method of resistor disc capable of improving high-current impact resistance

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JP3631341B2 (en) * 1996-10-18 2005-03-23 Tdk株式会社 Multilayer composite functional element and method for manufacturing the same
CN100396632C (en) * 2006-01-10 2008-06-25 陕西科技大学 Preparation method of lead-free sealing glass for metal oxide lightning arrester

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102249666A (en) * 2011-05-13 2011-11-23 中国科学院宁波材料技术与工程研究所 Method for preparing direct-current zinc oxide resistance card
CN104692790A (en) * 2013-12-04 2015-06-10 青岛润鑫伟业科贸有限公司 Novel resistor material
CN105427977A (en) * 2016-01-16 2016-03-23 国网电力科学研究院武汉南瑞有限责任公司 High-performance direct-current zinc oxide varistor and preparation process thereof
CN106803449A (en) * 2016-01-16 2017-06-06 国家电网公司 A kind of Large Copacity small size high gradient ac oxide zinc resistor disc and its preparation technology
CN106803449B (en) * 2016-01-16 2019-05-24 国家电网公司 A kind of large capacity small size high gradient ac oxide zinc resistor disc and its preparation process
CN105427977B (en) * 2016-01-16 2018-05-01 国家电网公司 A kind of high-performance direct current zinc oxide resistance sheet and its preparation process
CN106518049A (en) * 2016-09-23 2017-03-22 清华大学 Manufacturing process for improving voltage gradient of zinc-oxide voltage-sensitive ceramics
CN108238790A (en) * 2016-12-27 2018-07-03 西安天工电气有限公司 A kind of formula and its preparation process of alternating-current lightning arrestor valve block
CN108238792A (en) * 2016-12-27 2018-07-03 西安天工电气有限公司 A kind of formula and its preparation process of direct current arrester valve block
CN107705946A (en) * 2017-07-19 2018-02-16 国网湖南省电力公司 A kind of high-pass flow zinc oxide resistor sheet and its production technology
CN108929108A (en) * 2018-07-30 2018-12-04 宜宾志源高压电器有限公司 A kind of production technology measuring arrester zinc oxide resistance sheet
CN111816398A (en) * 2020-06-23 2020-10-23 上海大学 Resistor disc preparation method capable of improving high-current impact stability
CN111816398B (en) * 2020-06-23 2022-01-07 上海大学 Resistor disc preparation method capable of improving high-current impact stability
CN112694324A (en) * 2020-12-14 2021-04-23 襄阳市三三电气有限公司 Zinc oxide nonlinear resistance card and preparation method thereof
CN116143511A (en) * 2022-12-30 2023-05-23 南阳金牛电气有限公司 Preparation method of zinc oxide resistor disc with low voltage ratio and high current capacity
CN116655368A (en) * 2023-05-26 2023-08-29 嘉兴瑞嘉电气股份有限公司 Preparation method of resistor disc capable of improving high-current impact resistance
CN116655368B (en) * 2023-05-26 2023-12-08 嘉兴瑞嘉电气股份有限公司 Preparation method of resistor disc capable of improving high-current impact resistance

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