CN105622086A - Method for preparing high-gradient zinc oxide voltage dependent resistor ceramic - Google Patents
Method for preparing high-gradient zinc oxide voltage dependent resistor ceramic Download PDFInfo
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- CN105622086A CN105622086A CN201510996805.0A CN201510996805A CN105622086A CN 105622086 A CN105622086 A CN 105622086A CN 201510996805 A CN201510996805 A CN 201510996805A CN 105622086 A CN105622086 A CN 105622086A
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- deionized water
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 132
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 35
- 239000000919 ceramic Substances 0.000 title claims abstract description 21
- 230000001419 dependent effect Effects 0.000 title abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 77
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000002002 slurry Substances 0.000 claims abstract description 42
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 40
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims abstract description 40
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 238000002360 preparation method Methods 0.000 claims abstract description 21
- 229910000108 silver(I,III) oxide Inorganic materials 0.000 claims abstract description 21
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 19
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 19
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 19
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- 239000002994 raw material Substances 0.000 claims abstract description 15
- 229910052709 silver Inorganic materials 0.000 claims abstract description 15
- 238000005245 sintering Methods 0.000 claims abstract description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 10
- 238000000227 grinding Methods 0.000 claims abstract description 8
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004576 sand Substances 0.000 claims description 37
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 36
- 239000008367 deionised water Substances 0.000 claims description 24
- 229910021641 deionized water Inorganic materials 0.000 claims description 24
- 238000003801 milling Methods 0.000 claims description 22
- 229910002651 NO3 Inorganic materials 0.000 claims description 21
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000843 powder Substances 0.000 claims description 12
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 claims description 11
- 239000004411 aluminium Substances 0.000 claims description 9
- 238000000748 compression moulding Methods 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- -1 silver ions Chemical class 0.000 claims description 9
- 238000009413 insulation Methods 0.000 claims description 7
- 239000003292 glue Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000011236 particulate material Substances 0.000 claims description 6
- 238000007493 shaping process Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 3
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 3
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 229960001866 silicon dioxide Drugs 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 150000002500 ions Chemical class 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract description 2
- 230000032683 aging Effects 0.000 abstract description 2
- 239000011268 mixed slurry Substances 0.000 abstract description 2
- 239000006104 solid solution Substances 0.000 abstract description 2
- 229910052725 zinc Inorganic materials 0.000 abstract description 2
- 239000011701 zinc Substances 0.000 abstract description 2
- JLDSOYXADOWAKB-UHFFFAOYSA-N aluminium nitrate Chemical compound [Al+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O JLDSOYXADOWAKB-UHFFFAOYSA-N 0.000 abstract 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 abstract 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- 229960001296 zinc oxide Drugs 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
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- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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Abstract
The invention provides a method for preparing high-gradient zinc oxide voltage dependent resistor ceramic. The voltage dependent resistor ceramic is prepared from ZnO, Bi2O3, Sb2O3, MnO2, Cr2O3, Co2O3, SiO2, Al(NO3)3 and Ag2O. The method comprises the preparation steps of auxiliary slurry adding, ZnO adding, aluminum and silver ion addition, forming and sintering. The method has the advantages that a traditional raw material mixing and grinding technology and a sintering technology are adopted, and by adjusting components and the proportion of auxiliary addition materials, Al and Ag are added into ZnO and mixed slurry at the same time. Under the common effect of Al and Ag ions, in the sintering process, an Al and Ag solid solution enters zinc crystal lattices, grain resistance is reduced, and residual voltage of a large-current area is reduced; meanwhile, the number of clearance zinc ions is reduced, aging stabilizing performance of the ZnO voltage dependent resistor ceramic is improved, and in comparison with the mode of adding Al ions purely, leakage currents are effectively inhibited.
Description
Technical field
The present invention relates to field of material preparation, particularly the preparation method of a kind of zinc oxide piezoresistor ceramic.
Background technology
Zinc-oxide piezoresistor is main raw material taking ZnO, adds a small amount of Bi2O3, Sb2O3, MnO2, Cr2O3, Co2O3 etc. as auxiliary composition, adopts ceramic sintering process to be prepared from. Due to nonlinear wind vibration and the energy absorption capability of its excellence; metal oxide arrester based on Zinc-oxide piezoresistor becomes the key equipment that in modern power systems, superpotential is protected, for power system Lightning Impulse Overvoltage Protection, power equipment Insulation Coordination serve most important effect. Meanwhile, the overvoltage protection level of thunder arrester directly determines the dielectric level of power transmission and transforming equipment. Generally the voltage of voltage dependent resistor under 1mA galvanic current effect being called pressure sensitive voltage U1mA, the pressure sensitive voltage of unit height is called pressure-sensitive gradient. Pressure-sensitive gradient is more high, then under identical voltage effect, the height of based varistor is more little. .
Summary of the invention
It is an object of the invention to solve the problem, devise a kind of method preparing high-gradient zinc oxide piezoresistor ceramic. Specific design scheme is:
Prepare a method for high-gradient zinc oxide piezoresistor ceramic, prepare raw material and comprise zinc oxide ZnO, bismuth oxide Bi2O3, antimonous oxide Sb2O3, Manganse Dioxide MnO2, chromic oxide Cr2O3, cobalt sesquioxide Co2O3, silicon-dioxide SiO2, aluminum nitrate Al (NO3)3, silver suboxide Ag2O, preparation process comprises preparation auxiliary interpolation slurry, interpolation ZnO, interpolation aluminium, silver ions, shaping, sintering.
The mol ratio respectively preparing raw material is:
ZnO:Bi2O3: Sb2O3: MnO2: Cr2O3: Co2O3: SiO2: Al (NO3)3: Ag2O=88-97.3:0.5-2.0:0.5-1.5:0.5-1.0:0.5-1.0:0.5-1.5:1.0-2. 0:0.1-1.0:0.1-1.0.
Preparation is auxiliary to be added in slurry stage, and composition comprises Bi2O3��Sb2O3��MnO2��Cr2O3��Co2O3��SiO2The auxiliary preparation method adding slurry is the sand milling that adds water, and the sand milling time that adds water is 1-3h, and the water added in the sand grinding process that adds water is deionized water, the ratio of quality and the number of copies being added deionized water and described auxiliary interpolation slurry is deionized water 2 parts, auxiliary interpolation 1 part, slurry, the Bi added2O3��MnO2�� Cr2O3��Co2O3��SiO2Mol ratio be: 0.5-2.0:0.5-1.5:0.5-1.0:0.5-1.0:0.5-1.5:1.0-2.0.
Described forming step is compression molding, it may also be useful to the cylindrical die of hydraulic pressure tabletting machine and diameter 30mm, and by the particulate material compression molding after drying-granulating, forming pressure is 150MPa, molding time 3min.
Adopting High Temperature Furnaces Heating Apparatus to sinter, adopt the heat-up rate of 150��250 DEG C/h, make High Temperature Furnaces Heating Apparatus rise to 400 DEG C, under 400 DEG C of environment, insulation row glue 5h, from room temperature to sintering temperature 1150��1250 DEG C, is incubated 3��4h at a sintering temperature, makes ceramic sintered compact.
Adding in ZnO process, the ZnO added adds Bi in slurry with auxiliary2O3Mol ratio be 88-97.3:0.5-2.0, carry out mixed sand mill after adding ZnO and form slurry, mixed sand time consuming is 0.5-1h, needs to add deionized water in mixing sand grinding process, and the deionized water added and the ratio of quality and the number of copies of slurry are deionized water 0.5 part, 1 part, slurry.
Add in aluminium, silver ions step, add Al (NO3)3��Ag2O, adds Al (NO3)3��Ag2In O and slurry, the mol ratio of ZnO is 0.1-1.0:0.1-1.0:88-97.3, adds Al (NO3)3��Ag2Continue sand milling after O, form powder.
The method preparing high-gradient zinc oxide piezoresistor ceramic obtained by the technique scheme of the present invention, its useful effect is:
Adopt traditional raw material mixed grinding technique and sintering process, by adjusting composition and the ratio of auxiliary addition material, ZnO and mixed slurry with the addition of Al, Ag element simultaneously. Under the acting in conjunction of Al and Ag ion, in sintering process, zinc lattice is entered in Al and Ag solid solution, reduce grain resistance, reduce the residual voltage in big current district, make the quantity of gap zine ion decline simultaneously, improve the stability to aging energy of ZnO varistor pottery, compared with simple interpolation Al ion, leakage current is also effectively suppressed.
Embodiment
Prepare a method for high-gradient zinc oxide piezoresistor ceramic, prepare raw material and comprise zinc oxide ZnO, bismuth oxide Bi2O3, antimonous oxide Sb2O3, Manganse Dioxide MnO2, chromic oxide Cr2O3, cobalt sesquioxide Co2O3, silicon-dioxide SiO2, aluminum nitrate Al (NO3)3, silver suboxide Ag2O, preparation process comprises preparation auxiliary interpolation slurry, interpolation ZnO, interpolation aluminium, silver ions, shaping, sintering.
The mol ratio respectively preparing raw material is:
ZnO:Bi2O3: Sb2O3: MnO2: Cr2O3: Co2O3: SiO2: Al (NO3)3: Ag2O=88-97.3:0.5-2.0:0.5-1.5:0.5-1.0:0.5-1.0:0.5-1.5:1.0-2. 0:0.1-1.0:0.1-1.0.
Preparation is auxiliary to be added in slurry stage, and composition comprises Bi2O3��Sb2O3��MnO2��Cr2O3��Co2O3��SiO2The auxiliary preparation method adding slurry is the sand milling that adds water, and the sand milling time that adds water is 1-3h, and the water added in the sand grinding process that adds water is deionized water, the ratio of quality and the number of copies being added deionized water and described auxiliary interpolation slurry is deionized water 2 parts, auxiliary interpolation 1 part, slurry, the Bi added2O3��MnO2�� Cr2O3��Co2O3��SiO2Mol ratio be: 0.5-2.0:0.5-1.5:0.5-1.0:0.5-1.0:0.5-1.5:1.0-2.0.
Described forming step is compression molding, it may also be useful to the cylindrical die of hydraulic pressure tabletting machine and diameter 30mm, and by the particulate material compression molding after drying-granulating, forming pressure is 150MPa, molding time 3min.
Adopting High Temperature Furnaces Heating Apparatus to sinter, adopt the heat-up rate of 150��250 DEG C/h, make High Temperature Furnaces Heating Apparatus rise to 400 DEG C, under 400 DEG C of environment, insulation row glue 5h, from room temperature to sintering temperature 1150��1250 DEG C, is incubated 3��4h at a sintering temperature, makes ceramic sintered compact.
Add in ZnO process, the ZnO added is 88-97.3:0.5-2.0 with the auxiliary mol ratio adding Bi2O3 in slurry, carry out mixed sand mill after adding ZnO and form slurry, mixed sand time consuming is 0.5-1h, needing to add deionized water in mixing sand grinding process, the deionized water added and the ratio of quality and the number of copies of slurry are deionized water 0.5 part, 1 part, slurry.
Add in aluminium, silver ions step, add Al (NO3)3��Ag2O, adds Al (NO3)3��Ag2In O and slurry, the mol ratio of ZnO is 0.1-1.0:0.1-1.0:88-97.3, adds Al (NO3)3��Ag2Continue sand milling after O, form powder.
Embodiment one:
1) preparation of raw material
This low residual voltage ZnO varistor ceramic material prepares initial feed in following ratio ZnO (91mol%), Bi2O3 (1.5mol%), Sb2O3 (1mol%), MnO2 (1mol%), Cr2O3 (1mol%), Co2O3 (1mol%), SiO2 (1.5mol%), Al (NO3) 3 (1mol%), Ag2O (1mol%).
2) preparation is auxiliary adds slurry
Bi2O3 (1.5mol%), Sb2O3 (1mol%), MnO2 (1mol%), Cr2O3 (1mol%), Co2O3 (1mol%) and SiO2 (1.5mol%) are put into horizontal sand mill, add the deionized water of powder weight 1.5 times, sand milling 2 hours.
3) auxiliary interpolation slurry and ZnO are mixed
Auxiliary interpolation slurry after sand milling adds the ZnO of 91%mol, adds the deionized water of powder weight 0.5 times, by all mixing raw material mixing sand millings 1 hour, to being uniformly dispersed.
4) aluminium, silver ions is added
In the ZnO slurry mixed, add Al (NO3) 3 (1mol%), Ag2O (1mol%), continue sand milling 1 hour.
5) shaping
The powder obtained in previous step is carried out spraying dry, moisture after, it may also be useful to the cylindrical die of hydraulic pressure tabletting machine and diameter 30mm, by particulate material compression molding, forming pressure is 150MPa, 3 minutes dwell times.
6) sinter
With high-temperature electric resistance furnace sintered body in closed atmosphere, actual temp and period are as follows:
From room temperature to 400 DEG C, 2 hours heating-up times;
Glue are arranged 5 hours 400 DEG C of insulations;
From 400 DEG C to 900 DEG C, 3 hours heating-up times;
From 900 DEG C to 1250 DEG C, 3 hours heating-up times;
It is incubated 3 hours at 1200 DEG C;
Temperature fall.
The ZnO varistor sample prepared by above technique has been carried out every performance test. Its leakage current is inhibited, average 0.89A/cm2, nonlinear factor average 75, breakdown voltage gradient average 590V/mm, and residual voltage is than average 1.51.
Embodiment two:
1) preparation of raw material
This low residual voltage ZnO varistor ceramic material is in following ratio ZnO (96.3mol%), Bi2O3 (0.5mol%), Sb2O3 (0.5mol%), MnO2 (0.5mol%), Cr2O3 (0.5mol%), Co2O3 (0.5mol%), SiO2 (1mol%), Al (NO3) 3 (0.1mol%), Ag2O (0.1mol%) and preparation initial feed.
2) preparation is auxiliary adds slurry
Bi2O3 (0.5mol%), Sb2O3 (0.5mol%), MnO2 (0.5mol%), Cr2O3 (0.5mol%), Co2O3 (0.5mol%), SiO2 (1mol%) are put into horizontal sand mill, add the deionized water of powder weight 1.5 times, sand milling 2 hours.
3) auxiliary interpolation slurry and ZnO are mixed
Auxiliary interpolation slurry after sand milling adds the ZnO of 96.3%mol, adds the deionized water of powder weight 1.5 times, by all mixing raw material mixing sand millings 1 hour, to being uniformly dispersed.
4) aluminium, silver ions is added
In the ZnO slurry mixed, add Al (NO3) 3 (0.1mol%), Ag2O (0.1mol%), continue sand milling 1 hour.
5) shaping
The powder obtained in previous step is carried out spraying dry, moisture after, it may also be useful to the cylindrical die of hydraulic pressure tabletting machine and diameter 30mm, by particulate material compression molding, forming pressure is 150MPa, 3 minutes dwell times.
6) sinter
With high-temperature electric resistance furnace sintered body in closed atmosphere, actual temp and period are as follows:
From room temperature to 400 DEG C, 2 hours heating-up times;
Glue are arranged 5 hours 400 DEG C of insulations;
From 400 DEG C to 900 DEG C, 3 hours heating-up times;
From 900 DEG C to 1220 DEG C, 3 hours heating-up times;
It is incubated 4 hours at 1220 DEG C;
Temperature fall.
The ZnO varistor sample prepared by above technique has been carried out every performance test. Its leakage current is inhibited, average 1.05A/cm2, nonlinear factor average 83, breakdown voltage gradient average 510V/mm, and residual voltage is than average 1.49.
Embodiment three:
1) preparation of raw material
This low residual voltage ZnO varistor ceramic material prepares initial feed in following ratio ZnO (89.5mol%), Bi2O3 (2mol%), Sb2O3 (1.5mol%), MnO2 (1mol%), Cr2O3 (1mol%), Co2O3 (1.5mol%), SiO2 (2mol%), Al (NO3) 3 (1mol%), Ag2O (0.5mol%).
2) the auxiliary addition material of sand milling is prepared
Bi2O3 (2mol%), Sb2O3 (1.5mol%), MnO2 (1mol%), Cr2O3 (1mol%), Co2O3 (1.5mol%) and SiO2 (2mol%) are put into horizontal sand mill, add the deionized water of powder weight 1.5 times, sand milling 2 hours.
3) auxiliary interpolation slurry and ZnO are mixed
Auxiliary interpolation slurry after sand milling adds the ZnO of 89.5%mol, adds the deionized water of powder weight 1.5 times, by all mixing raw material mixing sand millings 1 hour, to being uniformly dispersed.
4) aluminium, silver ions is added
In the ZnO slurry mixed, add Al (NO3) 3 (1mol%), Ag2O (0.5mol%), continue sand milling 1 hour.
5) shaping
The powder obtained in previous step is carried out spraying dry, moisture after, it may also be useful to the cylindrical die of hydraulic pressure tabletting machine and diameter 30mm, by particulate material compression molding, forming pressure is 150MPa, 3 minutes dwell times.
6) sinter
With high-temperature electric resistance furnace sintered body in closed atmosphere, actual temp and period are as follows:
From room temperature to 400 DEG C, 2 hours heating-up times;
Glue are arranged 5 hours 400 DEG C of insulations;
From 400 DEG C to 900 DEG C, 3 hours heating-up times;
From 900 DEG C to 1150 DEG C, 3 hours heating-up times;
It is incubated 3 hours at 1150 DEG C;
Temperature fall.
The ZnO varistor sample prepared by above technique has been carried out every performance test. Its leakage current is inhibited, average 0.97A/cm2, nonlinear factor average 83, breakdown voltage gradient average 536V/mm, and residual voltage is than average 1.54.
Technique scheme only embodies the optimal technical scheme of technical solution of the present invention, and some variations that wherein some part may be made by those skilled in the art all embody the principle of the present invention, belong within protection scope of the present invention.
Claims (7)
1. prepare the method for high-gradient zinc oxide piezoresistor ceramic for one kind, it is characterized in that, preparing raw material and comprise zinc oxide ZnO, bismuth oxide Bi2O3, antimonous oxide Sb2O3, Manganse Dioxide MnO2, chromic oxide Cr2O3, cobalt sesquioxide Co2O3, silicon-dioxide SiO2, aluminum nitrate Al (NO3) 3, silver suboxide Ag2O, preparation process comprises preparation auxiliary interpolation slurry, interpolation ZnO, interpolation aluminium, silver ions, shaping, sintering.
2. according to the method preparing high-gradient zinc oxide piezoresistor ceramic described in claim 1, it is characterized in that, the mol ratio respectively preparing raw material is ZnO:Bi2O3:Sb2O3:MnO2:Cr2O3:Co2O3:SiO2:Al (NO3) 3:Ag2O=88-97.3:0.5-2.0:0.5-1.5:0.5-1.0:0.5-1.0:0.5-1.5:1 .0-2.0:0.1-1.0:0.1-1.0.
3. according to the method preparing high-gradient zinc oxide piezoresistor ceramic described in claim 1, it is characterized in that, preparation is auxiliary to be added in slurry stage, composition comprises Bi2O3, Sb2O3, MnO2, Cr2O3, Co2O3, SiO2, the auxiliary preparation method adding slurry is the sand milling that adds water, sand milling time that adds water is 1-3h, the water added in sand grinding process that adds water is deionized water, the ratio of quality and the number of copies being added deionized water and described auxiliary interpolation slurry is deionized water 2 parts, auxiliary interpolation 1 part, slurry, the Bi2O3 added, MnO2, Cr2O3, Co2O3, the mol ratio of SiO2 is: 0.5-2.0:0.5-1.5:0.5-1.0:0.5-1.0:0.5-1.5:1.0-2.0.
4. according to the method preparing high-gradient zinc oxide piezoresistor ceramic described in claim 1, it is characterized in that, described forming step is compression molding, use the cylindrical die of hydraulic pressure tabletting machine and diameter 30mm, by the particulate material compression molding after drying-granulating, forming pressure is 150MPa, molding time 3min.
5. according to the method preparing high-gradient zinc oxide piezoresistor ceramic described in claim 1, it is characterized in that, High Temperature Furnaces Heating Apparatus is adopted to sinter, adopt the heat-up rate of 150��250 DEG C/h, making High Temperature Furnaces Heating Apparatus rise to 400 DEG C, insulation row glue 5h under 400 DEG C of environment, from room temperature to sintering temperature 1150��1250 DEG C, it is incubated 3��4h at a sintering temperature, makes ceramic sintered compact.
6. according to the method preparing high-gradient zinc oxide piezoresistor ceramic described in claim 3, it is characterized in that, add in ZnO process, the ZnO added is 88-97.3:0.5-2.0 with the auxiliary mol ratio adding Bi2O3 in slurry, carry out mixed sand mill after adding ZnO and form slurry, mixed sand time consuming is 0.5-1h, needs to add deionized water in mixing sand grinding process, and the deionized water added and the ratio of quality and the number of copies of slurry are deionized water 0.5 part, 1 part, slurry.
7. according to the method preparing high-gradient zinc oxide piezoresistor ceramic described in claim 6, it is characterized in that, add in aluminium, silver ions step, add Al (NO3) 3, Ag2O, the mol ratio adding ZnO in Al (NO3) 3, Ag2O and slurry is 0.1-1.0:0.1-1.0:88-97.3, continue sand milling after adding Al (NO3) 3, Ag2O, form powder.
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| CN106892658A (en) * | 2017-04-13 | 2017-06-27 | 贵州大学 | In3+、Ga3+Compound donor doping ZnO voltage-sensitive ceramics and preparation method |
| CN108238791A (en) * | 2016-12-27 | 2018-07-03 | 西安天工电气有限公司 | A kind of formula and technique of high-performance high-gradient lightning arrester valve block |
| CN110615677A (en) * | 2019-09-30 | 2019-12-27 | 厦门松元电子有限公司 | Low-temperature sintered zinc oxide varistor ceramic material, preparation method thereof and preparation method of resistor |
| CN113173784A (en) * | 2021-06-11 | 2021-07-27 | 国网电力科学研究院武汉南瑞有限责任公司 | Zinc oxide resistance card capable of reducing residual voltage ratio and preparation method thereof |
| CN114524670A (en) * | 2022-03-15 | 2022-05-24 | 福建省乔光电子科技有限公司 | Ceramic resistor formula and processing technology and equipment |
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| CN108238791A (en) * | 2016-12-27 | 2018-07-03 | 西安天工电气有限公司 | A kind of formula and technique of high-performance high-gradient lightning arrester valve block |
| CN106892658A (en) * | 2017-04-13 | 2017-06-27 | 贵州大学 | In3+、Ga3+Compound donor doping ZnO voltage-sensitive ceramics and preparation method |
| CN106892658B (en) * | 2017-04-13 | 2020-11-10 | 贵州大学 | In3+、Ga3+Composite donor doped ZnO pressure-sensitive ceramic and preparation method thereof |
| CN110615677A (en) * | 2019-09-30 | 2019-12-27 | 厦门松元电子有限公司 | Low-temperature sintered zinc oxide varistor ceramic material, preparation method thereof and preparation method of resistor |
| CN113173784A (en) * | 2021-06-11 | 2021-07-27 | 国网电力科学研究院武汉南瑞有限责任公司 | Zinc oxide resistance card capable of reducing residual voltage ratio and preparation method thereof |
| CN114524670A (en) * | 2022-03-15 | 2022-05-24 | 福建省乔光电子科技有限公司 | Ceramic resistor formula and processing technology and equipment |
| CN114907111A (en) * | 2022-05-07 | 2022-08-16 | 吉林昱丰电气科技有限公司 | High-energy high-residual-voltage-ratio nonlinear device and preparation method thereof |
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