CN111816398B - Resistor disc preparation method capable of improving high-current impact stability - Google Patents
Resistor disc preparation method capable of improving high-current impact stability Download PDFInfo
- Publication number
- CN111816398B CN111816398B CN202010582443.1A CN202010582443A CN111816398B CN 111816398 B CN111816398 B CN 111816398B CN 202010582443 A CN202010582443 A CN 202010582443A CN 111816398 B CN111816398 B CN 111816398B
- Authority
- CN
- China
- Prior art keywords
- powder
- zno
- preparing
- resistor disc
- prepared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/30—Apparatus or processes specially adapted for manufacturing resistors adapted for baking
Abstract
The invention discloses a preparation method of a resistor disc capable of improving the high-current impact stability, which can realize the improvement of the high-current pulse surge impact stability of a ZnO piezoresistor by adjusting the process on the basis of not changing the original piezoresistor formula. After the prepared ZnO piezoresistor is impacted by a large-current pulse surge, the positive and negative piezovoltages have small difference compared with those before the impact, and the stability is good, so that the ZnO piezoresistor can meet the application requirements of more occasions. The invention has simple process, easy control and low cost.
Description
Technical Field
The invention relates to a preparation method of a piezoresistor, in particular to a preparation process capable of improving the stability of a resistor disc after high-current impact, which is applied to the technical field of electrical resistance elements.
Background
The varistor is a semiconductor ceramic resistor with obvious nonlinear volt-ampere characteristics. Piezoresistors have a common voltage threshold, commonly referred to as the threshold voltage. When the applied voltage is lower than the critical voltage, the current passing through the piezoresistor is very small, the internal resistance of the piezoresistor is very large, when the applied voltage exceeds the critical voltage, the internal resistance is sharply reduced, and the current flowing through the piezoresistor is exponentially multiplied. Piezoresistors are therefore widely used.
The operation mechanism of the ZnO varistor is that when transient surge occurs in an electronic circuit, the internal resistance of the varistor is sharply reduced and rapidly conducted, so that other electronic components are effectively protected from damage of surge current. The origin of the nonlinear I-V characteristic of the ZnO varistor is that the grain boundary layers around a large number of two adjacent ZnO crystal grains form back-to-back double Schottky barriers, and the ZnO varistor obtains the voltage sensitive characteristic due to the double-side barriers. However, the barrier of the ZnO grain boundary is inevitably affected by the large current surge impact, and the degradation behavior of the ZnO varistor under the high surge impact is an important factor restricting the development thereof. Therefore, the improvement of the electrical performance of the ZnO varistor, especially the degradation behavior after high surge shock, is of great importance, and becomes a technical problem to be solved urgently
Disclosure of Invention
In order to solve the problems in the prior art, the invention aims to overcome the defects in the prior art and provide a method for preparing a resistor disc capable of improving the high-current impact stability. The invention has simple process, easy control and low cost.
In order to achieve the purpose of the invention, the invention adopts the following technical scheme:
a preparation method of a resistor disc capable of improving high-current impact stability comprises the following steps:
a. preparing raw materials for preparing the resistance card:
preparing raw materials according to the following raw material formula by weight percent:
ZnO：80～93wt.％，Bi2O3：2～6wt.％，Sb2O3：1～6wt.％，NiO：0～6wt.％，Cr2O3：0～2wt.％，Mn3O4：0.5～5wt.％，Co3O4：0.5～5wt.％，SiO2: 0.5-3 wt.%, glass frit containing Ag and B: 0.5-3 wt.%;
b. preparation of slurry:
b1. ZnO, Sb to be prepared in the step a2O3、SiO2Mixing the glass powder and deionized water, adding the mixture into a ball mill, carrying out ball milling for 3-12h, sieving with a 120-mesh sieve, collecting mixed slurry, drying the mixed slurry at the temperature of 100-120 ℃, and crushing the dried mixed slurry into powder to obtain a mixed powder material;
b2. pre-calcining the mixed powder material obtained in the step b1 at the temperature of 700 ℃ and 900 ℃ for 1-3h to ensure that part of Sb3+The ions are permeated into the ZnO crystal grains,simultaneously make SiO2The glassy structure layer formed by the glass powder is coated outside the ZnO crystal grains; cooling and crushing into powder;
b3. bi to be prepared in said step a2O3、NiO、Cr2O3、Mn3O4、Co3O4Mixing with deionized water to enable the mixed solution to reach a solid content of not less than 60% by mass, adding the mixed solution into a ball mill, carrying out ball milling for 24-48 hours to enable the particle size of the mixed slurry to reach 0.5-2 mu m, and drying and crushing the mixed slurry into powder;
b4. mixing the powder prepared in the step b2 and the step b3 with Al (NO)3)3·9H2Continuously mixing O, a dispersing agent, a binder and deionized water, adding into a ball mill, carrying out ball milling for 12-24h, and sieving the obtained slurry with a 120-mesh sieve to obtain total slurry;
c. preparing a blank body:
c1. b, performing spray granulation on the total slurry prepared in the step b by using a spray dryer to obtain granulated materials;
c2. adding deionized water and a release agent into the granulated material obtained in the step c1, uniformly mixing, sieving by a 30-mesh sieve, and then carrying out ageing treatment on the sieved and collected powder for at least 20 hours to ensure that the mass percent water content of the powder is 1.0-1.5%, thus obtaining blank making powder;
c3. pressing and molding the blank powder obtained in the step c2, and controlling the pressure to ensure that the density of the molded blank is 3.2-3.3g/cm3；
d. The sintering process comprises the following steps:
d1. pre-calcining the green body prepared in the step c at the temperature of 400-500 ℃, and simultaneously finishing glue discharging treatment to discharge organic matters in the green body;
d2. calcining the green body obtained through the pre-calcining treatment in the step d1 at the high temperature of 1000-1150 ℃ for at least 2h to obtain a sintered green body of the resistor disc;
d3. and d2, grinding and cleaning the resistance card blank obtained in the step d2, and then preparing a metal electrode on the surface of the treated resistance card blank so as to obtain the finished ZnO piezoresistor.
As a preferred technical scheme of the invention, in the step a, the following raw material formula is adopted to prepare the raw materials according to the mass percentage of the components:
ZnO：86.1～90.2wt.％，Bi2O3：2.5～3.6wt.％，Sb2O3：1.6～1.8wt.％，NiO：1.4～2.5wt.％，Cr2O3：0～0.7wt.％，Mn3O4：1.1～1.3wt.％，Co3O4：1.0～2.6wt.％，SiO2: 0.6-0.8 wt.%, glass frit containing Ag and B: 0.7 to 1.5 wt.%.
As a preferable embodiment of the present invention, Al (NO) is added in the step b43)3·9H2And O is 0.01 to 0.05 weight percent of the total amount of the powder prepared in the step b2 and the step b3.
As a preferable embodiment of the present invention, Al (NO) is added in the step b43)3·9H2And O is 0.021-0.025 wt% of the total amount of the powder prepared in the step b2 and the step b3.
In the step c3, the obtained blank making powder is pressed and formed, and the pressure is controlled, so that the formed blank has a diameter of 15-60mm and a thickness of 2.44-17.4 mm.
As a preferred technical scheme of the invention, in the step d1, the green body is subjected to pre-calcination at 480 ℃ of 430-.
As a preferred technical proposal of the invention, in the step d2, the green body is calcined at the high temperature of 1120-1150 ℃ for at least 2.4 h.
As a preferable technical scheme of the invention, in the step d3, the diameter of the prepared finished product ZnO varistor is 8-60 mm, and the thickness is 2-30 mm.
As a preferable technical scheme of the invention, in the step d3, the prepared finished product ZnO varistor has the varistor potential gradient range of 100-300V/mm, the nonlinear coefficient of 20-100 and the residual voltage ratio of 5kA 8/20 mus thunder wave of 1.5-1.8.
As a preferred embodiment of the present invention, in the step d3, after 20 × 20kA 8/20 μ s lightning wave impact, for the ZnO varistor with a diameter of 8-20mm, the difference between the forward voltage and the reverse voltage is not more than 10% compared with the voltage before impact, for the ZnO varistor with a diameter of 20-40mm, the difference between the forward voltage and the reverse voltage is not more than 5% compared with the voltage before impact, and for the ZnO varistor with a diameter of 40-60mm, the difference between the forward voltage and the reverse voltage is not more than 3% compared with the voltage before impact.
Compared with the prior art, the invention has the following obvious and prominent substantive characteristics and remarkable advantages:
1. on the basis of not changing the original piezoresistor formula, the improvement of the stability of the high-current pulse surge impact of the ZnO piezoresistor is realized through the adjustment of the process;
2. the method is effective in improving the surge impact stability of the ZnO piezoresistor with the diameter range of 8-60 mm, and can be used for not only small piezoresistors, but also piezochips of surge protectors and valve plates of lightning arresters;
3. the method is simple and easy to implement, low in cost and suitable for popularization and application.
Detailed Description
The above-described scheme is further illustrated below with reference to specific embodiments, which are detailed below:
the first embodiment is as follows:
in this embodiment, a method for manufacturing a resistor disc capable of improving stability of large current impact includes the following steps:
a. preparing raw materials for preparing the resistance card:
preparing raw materials according to the following raw material formula by weight percent:
ZnO：86.1wt.％，Bi2O3：3.6wt.％，Sb2O3：1.6wt.％，NiO：2.5wt.％，Mn3O4：1.3wt.％，Co3O4：2.6wt.％，SiO2: 0.8 wt.%, Ag and B containing glass frit: 1.5 wt.%;
b. preparation of slurry:
b1. ZnO, Sb to be prepared in the step a2O3、SiO2Mixing the glass powder and deionized water, adding the mixture into a ball mill, carrying out ball milling for 6 hours, sieving the mixture by a 120-mesh sieve, collecting mixed slurry, drying the mixed slurry at 120 ℃, and crushing the dried mixed slurry into powder to obtain a mixed powder material;
b2. pre-calcining the mixed powder material obtained in the step b1 at 800 ℃ for 2h to ensure that part of Sb is3+Ion-penetrating into ZnO grains while making SiO2The glassy structure layer formed by the glass powder is coated outside the ZnO crystal grains; cooling and crushing into powder;
b3. bi to be prepared in said step a2O3、NiO、Cr2O3、Mn3O4、Co3O4Mixing with deionized water to make the mixed solution reach a solid content of 60% by mass, adding the mixed solution into a ball mill, ball-milling for 48 hours to make the particle size of the mixed slurry be 0.8 μm, and drying and crushing into powder;
b4. mixing the powder prepared in the step b2 and the step b3 with Al (NO)3)3·9H2Continuously mixing O, a dispersing agent, a binder and deionized water, adding into a ball mill, carrying out ball milling for 20 hours, and sieving the obtained slurry with a 120-mesh sieve to obtain total slurry; added Al (NO)3)3·9H2O is 0.025 wt% of the total amount of the powder prepared in the step b2 and the step b 3;
c. preparing a blank body:
c1. b, performing spray granulation on the total slurry prepared in the step b by using a spray dryer to obtain granulated materials;
c2. adding deionized water and a release agent into the granulated material obtained in the step c1, uniformly mixing, sieving by a 30-mesh sieve, and then carrying out ageing treatment on the sieved and collected powder for 24 hours to enable the mass percentage water content of the powder to be 1.2%, so as to obtain blank making powder;
c3. pressing and molding the blank powder obtained in the step c2, and controlling the pressure so that the diameter of the molded blank is the same as that of the blank15mm, 2.44mm in thickness and 3.25g/cm in density3；
d. The sintering process comprises the following steps:
d1. pre-calcining the green body prepared in the step c at 430 ℃, completing the glue discharging treatment at the same time, and discharging organic matters in the green body;
d2. calcining the green body obtained through the pre-calcining treatment in the step d1 at the high temperature of 1120 ℃ for at least 2.5 hours to obtain a sintered green body of the resistor disc;
d3. and d2, grinding and cleaning the resistance card blank obtained in the step d2, and then preparing a metal electrode on the surface of the treated resistance card blank so as to obtain the finished ZnO piezoresistor.
Experimental test analysis:
the ZnO varistor prepared in this example was used as a test sample to conduct experimental tests.
The diameter of the finished ZnO varistor prepared by the method of the embodiment is 12.5mm, and the thickness of the finished ZnO varistor is 2 mm. The piezoresistor has a piezopotential gradient range of 150V/mm, a nonlinear coefficient of 56 and a residual voltage ratio of 1.78 in a 5kA 8/20 mu s lightning wave. After 20 times of 20kA 8/20 mus lightning wave impact, the forward voltage-sensitive voltage is different from the comparison before impact by 7 percent, and the reverse voltage-sensitive voltage is different from the comparison before impact by-2 percent. No ZnO or Sb in the traditional process2O3、SiO2After 20 times of 20kA 8/20 mu s lightning wave impact, the difference between the forward voltage-dependent voltage and the voltage-dependent voltage before no impact is 15%, and the difference between the reverse voltage-dependent voltage and the voltage-dependent voltage before no impact is-3% of the ZnO resistor sample obtained by the steps of mixing the glass powder and pre-calcining. The preparation process according to the embodiment effectively improves the high-current impact stability of the ZnO piezoresistor.
Example two:
this embodiment is substantially the same as the first embodiment, and is characterized in that:
in this embodiment, a method for manufacturing a resistor disc capable of improving stability of large current impact includes the following steps:
a. preparing raw materials for preparing the resistance card:
preparing raw materials according to the following raw material formula by weight percent:
ZnO：86.1wt.％，Bi2O3：3.6wt.％，Sb2O3：1.6wt.％，NiO：2.5wt.％，Mn3O4：1.3wt.％，Co3O4：2.6wt.％，SiO2: 0.8 wt.%, Ag and B containing glass frit: 1.5 wt.%;
b. preparation of slurry:
b1. ZnO, Sb to be prepared in the step a2O3、SiO2Mixing the glass powder and deionized water, adding the mixture into a ball mill, carrying out ball milling for 6 hours, sieving the mixture by a 120-mesh sieve, collecting mixed slurry, drying the mixed slurry at 120 ℃, and crushing the dried mixed slurry into powder to obtain a mixed powder material;
b2. pre-calcining the mixed powder material obtained in the step b1 at 800 ℃ for 2h to ensure that part of Sb is3+Ion-penetrating into ZnO grains while making SiO2The glassy structure layer formed by the glass powder is coated outside the ZnO crystal grains; cooling and crushing into powder;
b3. bi to be prepared in said step a2O3、NiO、Cr2O3、Mn3O4、Co3O4Mixing with deionized water to make the mixed solution reach a solid content of 60% by mass, adding the mixed solution into a ball mill, ball-milling for 48 hours to make the particle size of the mixed slurry be 0.8 μm, and drying and crushing into powder;
b4. mixing the powder prepared in the step b2 and the step b3 with Al (NO)3)3·9H2Continuously mixing O, a dispersing agent, a binder and deionized water, adding into a ball mill, carrying out ball milling for 20 hours, and sieving the obtained slurry with a 120-mesh sieve to obtain total slurry; added Al (NO)3)3·9H2O is 0.025 wt% of the total amount of the powder prepared in the step b2 and the step b 3;
c. preparing a blank body:
c1. b, performing spray granulation on the total slurry prepared in the step b by using a spray dryer to obtain granulated materials;
c2. adding deionized water and a release agent into the granulated material obtained in the step c1, uniformly mixing, sieving by a 30-mesh sieve, and then carrying out ageing treatment on the sieved and collected powder for 24 hours to enable the mass percentage water content of the powder to be 1.2%, so as to obtain blank making powder;
c3. pressing and molding the blank powder obtained in the step c2, and controlling the pressure so that the molded blank has the diameter of 45mm, the thickness of 4.5mm and the density of 3.25g/cm3；
d. The sintering process comprises the following steps:
d1. pre-calcining the green body prepared in the step c at 430 ℃, completing the glue discharging treatment at the same time, and discharging organic matters in the green body;
d2. calcining the green body obtained through the pre-calcining treatment in the step d1 at the high temperature of 1120 ℃ for at least 2.5 hours to obtain a sintered green body of the resistor disc;
d3. and d2, grinding and cleaning the resistance card blank obtained in the step d2, and then preparing a metal electrode on the surface of the treated resistance card blank so as to obtain the finished ZnO piezoresistor.
Experimental test analysis:
the ZnO varistor prepared in this example was used as a test sample to conduct experimental tests.
The diameter of the finished ZnO varistor prepared by the method of the embodiment is 37.5mm, and the thickness of the finished ZnO varistor is 3.7 mm. The piezoresistor has a piezopotential gradient range of 152V/mm, a nonlinear coefficient of 63 and a residual voltage ratio of 1.70 of 5kA 8/20 mus lightning wave. After 20 lightning impacts of 20kA 8/20 mu s, the forward voltage-dependent voltage is different from that before impact by 5%, and the reverse voltage-dependent voltage is different from that before impact by-1%. No ZnO or Sb in the traditional process2O3、SiO2After 20 times of 20kA 8/20 mu s lightning wave impact, the difference between the forward voltage-dependent voltage and the voltage-dependent voltage before no impact is 11%, and the difference between the reverse voltage-dependent voltage and the voltage-dependent voltage before no impact is-2% of the ZnO resistor sample obtained by the steps of mixing the glass powder and pre-calcining. The preparation process according to the embodiment effectively improves the high-current impact stability of the ZnO piezoresistor.
Example three:
this embodiment is substantially the same as the previous embodiment, and is characterized in that:
in this embodiment, a method for manufacturing a resistor disc capable of improving stability of large current impact includes the following steps:
a. preparing raw materials for preparing the resistance card:
preparing raw materials according to the following raw material formula by weight percent:
ZnO：90.2wt.％，Bi2O3：2.5wt.％，Sb2O3：1.8wt.％，NiO：1.4wt.％，Cr2O3：0.7wt.％，Mn3O4：1.1wt.％，Co3O4：1.0wt.％，SiO2: 0.6 wt.%, Ag and B containing glass frit: 0.7 wt.%;
b. preparation of slurry:
b1. ZnO, Sb to be prepared in the step a2O3、SiO2Mixing the glass powder and deionized water, adding the mixture into a ball mill, carrying out ball milling for 6 hours, sieving the mixture by a 120-mesh sieve, collecting mixed slurry, drying the mixed slurry at 120 ℃, and crushing the dried mixed slurry into powder to obtain a mixed powder material;
b2. pre-calcining the mixed powder material obtained in the step b1 at 800 ℃ for 2h to ensure that part of Sb is3+Ion-penetrating into ZnO grains while making SiO2The glassy structure layer formed by the glass powder is coated outside the ZnO crystal grains; cooling and crushing into powder;
b3. bi to be prepared in said step a2O3、NiO、Cr2O3、Mn3O4、Co3O4Mixing with deionized water to enable the mixed solution to reach a solid content of 60% by mass, adding the mixed solution into a ball mill, carrying out ball milling for 36 hours to enable the particle size of the mixed slurry to be 1.4 mu m, and then drying and crushing the mixed slurry into powder;
b4. mixing the powder prepared in the step b2 and the step b3 with Al (NO)3)3·9H2Continuously mixing O, a dispersing agent, a binder and deionized water, adding the mixture into a ball mill, carrying out ball milling for 20 hours, and sieving the obtained slurry with a 120-mesh sieve to obtain the total slurry(ii) a Added Al (NO)3)3·9H2O is 0.021 wt% of the total amount of the powder prepared in the step b2 and the step b 3;
c. preparing a blank body:
c1. b, performing spray granulation on the total slurry prepared in the step b by using a spray dryer to obtain granulated materials;
c2. adding deionized water and a release agent into the granulated material obtained in the step c1, uniformly mixing, sieving by a 30-mesh sieve, and then carrying out ageing treatment on the sieved and collected powder for 48 hours to enable the mass percentage water content of the powder to be 1.1%, so as to obtain blank making powder;
c3. pressing and molding the blank powder obtained in the step c2, and controlling the pressure so that the molded blank has the diameter of 60mm, the thickness of 17.4mm and the density of 3.25g/cm3；
d. The sintering process comprises the following steps:
d1. pre-calcining the green body prepared in the step c at 480 ℃, and simultaneously finishing glue discharging treatment to discharge organic matters in the green body;
d2. calcining the green body obtained through the pre-calcining treatment in the step d1 at a high temperature of 1150 ℃ for at least 2.4 hours to obtain a sintered green body of the resistor disc;
d3. and d2, grinding and cleaning the resistance card blank obtained in the step d2, and then preparing a metal electrode on the surface of the treated resistance card blank so as to obtain the finished ZnO piezoresistor.
Experimental test analysis:
the ZnO varistor prepared in this example was used as a test sample to conduct experimental tests.
The diameter of the finished ZnO varistor prepared by the method of the embodiment is 50mm, and the thickness of the finished ZnO varistor is 14.4 mm. The piezoresistor has a piezopotential gradient range of 225V/mm, a nonlinear coefficient of 78 and a residual voltage ratio of 1.64 of 5kA 8/20 mus lightning wave. After 20 lightning impacts of 20kA 8/20 mu s, the difference between the forward voltage-sensitive voltage and the contrast before no impact is 2.8%, and the difference between the reverse voltage-sensitive voltage and the contrast before no impact is-1.2%. No ZnO or Sb in the traditional process2O3、SiO2Glass powderThe ZnO resistance samples from the mixing and precalcining steps after 20kA 8/20 μ s lightning strikes exhibited a 5% difference in forward varistor voltage from the pre-non-strike comparison and a-3% difference in reverse varistor voltage from the pre-non-strike comparison. The preparation process according to the embodiment effectively improves the high-current impact stability of the ZnO piezoresistor.
In summary, the embodiment describes that the resistance sheet preparation process capable of improving the stability of the large-current surge can realize the improvement of the stability of the large-current pulse surge of the ZnO piezoresistor through the adjustment of the process on the basis of not changing the original piezoresistor formula. After the prepared ZnO piezoresistor is impacted by a large-current pulse surge, the positive and negative piezovoltages have small difference compared with those before the impact, and the stability is good, so that the ZnO piezoresistor can meet the application requirements of more occasions.
While the embodiments of the present invention have been described, the present invention is not limited to the above embodiments, and various changes, modifications, substitutions, combinations or simplifications made according to the spirit and principle of the present invention may be made in the form of equivalent substitutions without departing from the technical principle and inventive concept of the present invention.
Claims (10)
1. A preparation method of a resistor disc capable of improving high-current impact stability is characterized by comprising the following steps:
a. preparing raw materials for preparing the resistance card:
preparing raw materials according to the following raw material formula by weight percent:
ZnO：80～93wt.％，Bi2O3：2～6wt.％，Sb2O3：1～6wt.％，NiO：0～6wt.％，Cr2O3：0～2wt.％，Mn3O4：0.5～5wt.％，Co3O4：0.5～5wt.％，SiO2: 0.5-3 wt.%, glass frit containing Ag and B: 0.5-3 wt.%;
b. preparation of slurry:
b1. will be in said step aPrepared ZnO and Sb2O3、SiO2Mixing the glass powder and deionized water, adding the mixture into a ball mill, carrying out ball milling for 3-12h, sieving with a 120-mesh sieve, collecting mixed slurry, drying the mixed slurry at the temperature of 100-120 ℃, and crushing the dried mixed slurry into powder to obtain a mixed powder material;
b2. pre-calcining the mixed powder material obtained in the step b1 at the temperature of 700 ℃ and 900 ℃ for 1-3h to ensure that part of Sb3 +Ion-penetrating into ZnO grains while making SiO2The glassy structure layer formed by the glass powder is coated outside the ZnO crystal grains; cooling and crushing into powder;
b3. bi to be prepared in said step a2O3、NiO、Cr2O3、Mn3O4、Co3O4Mixing with deionized water to enable the mixed solution to reach a solid content of not less than 60% by mass, adding the mixed solution into a ball mill, carrying out ball milling for 24-48 hours to enable the particle size of the mixed slurry to reach 0.5-2 mu m, and drying and crushing the mixed slurry into powder;
b4. mixing the powder prepared in the step b2 and the step b3 with Al (NO)3)3·9H2Continuously mixing O, a dispersing agent, a binder and deionized water, adding into a ball mill, carrying out ball milling for 12-24h, and sieving the obtained slurry with a 120-mesh sieve to obtain total slurry;
c. preparing a blank body:
c1. b, performing spray granulation on the total slurry prepared in the step b by using a spray dryer to obtain granulated materials;
c2. adding deionized water and a release agent into the granulated material obtained in the step c1, uniformly mixing, sieving by a 30-mesh sieve, and then carrying out ageing treatment on the sieved and collected powder for at least 20 hours to ensure that the mass percent water content of the powder is 1.0-1.5%, thus obtaining blank making powder;
c3. pressing and molding the blank powder obtained in the step c2, and controlling the pressure to ensure that the density of the molded blank is 3.2-3.3g/cm3；
d. The sintering process comprises the following steps:
d1. pre-calcining the green body prepared in the step c at the temperature of 400-500 ℃, and simultaneously finishing glue discharging treatment to discharge organic matters in the green body;
d2. calcining the green body obtained through the pre-calcining treatment in the step d1 at the high temperature of 1000-1150 ℃ for at least 2h to obtain a sintered green body of the resistor disc;
d3. and d2, grinding and cleaning the resistance card blank obtained in the step d2, and then preparing a metal electrode on the surface of the treated resistance card blank so as to obtain the finished ZnO piezoresistor.
2. The method for preparing a resistor disc capable of improving high-current impact stability according to claim 1, wherein the method comprises the following steps: in the step a, the raw materials are prepared by adopting the following raw material formula according to the mass percentage of the components:
ZnO：86.1～90.2wt.％，Bi2O3：2.5～3.6wt.％，Sb2O3：1.6～1.8wt.％，NiO：1.4～2.5wt.％，Cr2O3：0～0.7wt.％，Mn3O4：1.1～1.3wt.％，Co3O4：1.0～2.6wt.％，SiO2: 0.6-0.8 wt.%, glass frit containing Ag and B: 0.7 to 1.5 wt.%.
3. The method for preparing a resistor disc capable of improving high-current impact stability according to claim 1, wherein the method comprises the following steps: al (NO) added in said step b43)3·9H2And O is 0.01 to 0.05 weight percent of the total amount of the powder prepared in the step b2 and the step b3.
4. The method for preparing a resistor disc capable of improving high-current impact stability according to claim 3, wherein the method comprises the following steps: al (NO) added in said step b43)3·9H2And O is 0.021-0.025 wt% of the total amount of the powder prepared in the step b2 and the step b3.
5. The method for preparing a resistor disc capable of improving high-current impact stability according to claim 1, wherein the method comprises the following steps: in the step c3, the obtained blank making powder is pressed and formed, and the pressure is controlled so that the formed blank has the diameter of 15-60mm and the thickness of 2.44-17.4 mm.
6. The method for preparing a resistor disc capable of improving high-current impact stability according to claim 1, wherein the method comprises the following steps: in said step d1, the green body is subjected to a pre-calcination at 480 ℃ and 430 ℃.
7. The method for preparing a resistor disc capable of improving high-current impact stability according to claim 1, wherein the method comprises the following steps: in said step d2, the body is calcined at a high temperature of 1120-1150 ℃ for at least 2.4 h.
8. The method for preparing a resistor disc capable of improving high-current impact stability according to claim 1, wherein the method comprises the following steps: in the step d3, the diameter of the prepared finished ZnO varistor is 8-60 mm, and the thickness of the finished ZnO varistor is 2-30 mm.
9. The method for preparing a resistor disc capable of improving high-current impact stability according to claim 1, wherein the method comprises the following steps: in the step d3, the prepared finished product ZnO varistor has the varistor potential gradient range of 100-300V/mm, the nonlinear coefficient of 20-100 and the residual voltage ratio of 5kA 8/20 mus thunder wave of 1.5-1.8.
10. The method for preparing a resistor disc capable of improving high-current impact stability according to claim 1, wherein the method comprises the following steps: in step d3, after 20 × 20kA 8/20 μ s lightning wave impact, the difference between the forward voltage and the reverse voltage of the ZnO varistor with the diameter of 8-20mm is not more than 10% compared with the voltage before impact, the difference between the forward voltage and the reverse voltage of the ZnO varistor with the diameter of 20-40mm is not more than 5% compared with the voltage before impact, and the difference between the forward voltage and the reverse voltage of the ZnO varistor with the diameter of 40-60mm is not more than 3% compared with the voltage before impact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010582443.1A CN111816398B (en) | 2020-06-23 | 2020-06-23 | Resistor disc preparation method capable of improving high-current impact stability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010582443.1A CN111816398B (en) | 2020-06-23 | 2020-06-23 | Resistor disc preparation method capable of improving high-current impact stability |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111816398A CN111816398A (en) | 2020-10-23 |
| CN111816398B true CN111816398B (en) | 2022-01-07 |
Family
ID=72845591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010582443.1A Active CN111816398B (en) | 2020-06-23 | 2020-06-23 | Resistor disc preparation method capable of improving high-current impact stability |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111816398B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112694324A (en) * | 2020-12-14 | 2021-04-23 | 襄阳市三三电气有限公司 | Zinc oxide nonlinear resistance card and preparation method thereof |
| CN113506664A (en) * | 2021-06-01 | 2021-10-15 | 国网电力科学研究院武汉南瑞有限责任公司 | Preparation method of high potential gradient voltage-sensitive resistance chip |
| CN113716952A (en) * | 2021-09-10 | 2021-11-30 | 西安神电电器有限公司 | Low-gradient large-current impact-stability resistor material and preparation method thereof |
| CN116655368B (en) * | 2023-05-26 | 2023-12-08 | 嘉兴瑞嘉电气股份有限公司 | Preparation method of resistor disc capable of improving high-current impact resistance |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1078065A (en) * | 1992-04-23 | 1993-11-03 | 中国科学院新疆物理研究所 | Low voltage varistor material and technology |
| US5699035A (en) * | 1991-12-13 | 1997-12-16 | Symetrix Corporation | ZnO thin-film varistors and method of making the same |
| CN101071666A (en) * | 2007-06-22 | 2007-11-14 | 赑丰生技股份有限公司 | Low-capacitance layered wafer rheostat and overvoltage protection material thereof |
| CN101447265A (en) * | 2007-11-27 | 2009-06-03 | 兴亚株式会社 | Method for fabricating zinc oxide multilayer chip piezoresistor |
| CN101503292A (en) * | 2009-03-07 | 2009-08-12 | 抚顺电瓷制造有限公司 | Formula of direct current zinc oxide resistance chip |
| CN101630553A (en) * | 2009-07-17 | 2010-01-20 | 立昌先进科技股份有限公司 | Preparation method of zinc oxide varister |
| CN101786874A (en) * | 2010-01-15 | 2010-07-28 | 清华大学 | Process method for preparing low residual voltage ZnO varistor ceramic |
| CN102126852A (en) * | 2011-03-22 | 2011-07-20 | 襄樊市三三电气有限公司 | Method for preparing zinc oxide piezoresistor ceramic |
| CN102617126A (en) * | 2012-03-31 | 2012-08-01 | 中国科学院上海硅酸盐研究所 | Low-temperature sintered zinc oxide voltage dependent resistance material and preparation method thereof |
| CN104599797A (en) * | 2014-12-29 | 2015-05-06 | 广西新未来信息产业股份有限公司 | Voltage-sensitive resistor edge coating slurry material and preparation method thereof |
| CN104944935A (en) * | 2015-06-08 | 2015-09-30 | 华中科技大学 | ZnO varister ceramic and preparation method thereof |
| CN105924149A (en) * | 2016-04-23 | 2016-09-07 | 上海大学 | Preparation method for resistor sheet used for overvoltage protector of urban rail transit |
| CN109678490A (en) * | 2018-11-26 | 2019-04-26 | 新疆大学 | A kind of doping boron and the direct current ZnO varistor of ruthenium ion and preparation method thereof |
| CN109887694A (en) * | 2019-03-27 | 2019-06-14 | 扬州发运电气有限公司 | High energy ZnO resistors piece making method is pressed in one kind |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI425532B (en) * | 2011-11-29 | 2014-02-01 | Leader Well Technology Co Ltd | Process for producing zno varistor with higher potential gradient and non-coefficient value |
-
2020
- 2020-06-23 CN CN202010582443.1A patent/CN111816398B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5699035A (en) * | 1991-12-13 | 1997-12-16 | Symetrix Corporation | ZnO thin-film varistors and method of making the same |
| CN1078065A (en) * | 1992-04-23 | 1993-11-03 | 中国科学院新疆物理研究所 | Low voltage varistor material and technology |
| CN101071666A (en) * | 2007-06-22 | 2007-11-14 | 赑丰生技股份有限公司 | Low-capacitance layered wafer rheostat and overvoltage protection material thereof |
| CN101447265A (en) * | 2007-11-27 | 2009-06-03 | 兴亚株式会社 | Method for fabricating zinc oxide multilayer chip piezoresistor |
| CN101503292A (en) * | 2009-03-07 | 2009-08-12 | 抚顺电瓷制造有限公司 | Formula of direct current zinc oxide resistance chip |
| CN101630553A (en) * | 2009-07-17 | 2010-01-20 | 立昌先进科技股份有限公司 | Preparation method of zinc oxide varister |
| CN101786874A (en) * | 2010-01-15 | 2010-07-28 | 清华大学 | Process method for preparing low residual voltage ZnO varistor ceramic |
| CN102126852A (en) * | 2011-03-22 | 2011-07-20 | 襄樊市三三电气有限公司 | Method for preparing zinc oxide piezoresistor ceramic |
| CN102617126A (en) * | 2012-03-31 | 2012-08-01 | 中国科学院上海硅酸盐研究所 | Low-temperature sintered zinc oxide voltage dependent resistance material and preparation method thereof |
| CN104599797A (en) * | 2014-12-29 | 2015-05-06 | 广西新未来信息产业股份有限公司 | Voltage-sensitive resistor edge coating slurry material and preparation method thereof |
| CN104944935A (en) * | 2015-06-08 | 2015-09-30 | 华中科技大学 | ZnO varister ceramic and preparation method thereof |
| CN105924149A (en) * | 2016-04-23 | 2016-09-07 | 上海大学 | Preparation method for resistor sheet used for overvoltage protector of urban rail transit |
| CN109678490A (en) * | 2018-11-26 | 2019-04-26 | 新疆大学 | A kind of doping boron and the direct current ZnO varistor of ruthenium ion and preparation method thereof |
| CN109887694A (en) * | 2019-03-27 | 2019-06-14 | 扬州发运电气有限公司 | High energy ZnO resistors piece making method is pressed in one kind |
Non-Patent Citations (1)
| Title |
|---|
| 添加剂对氧化锌电阻片电学性能影响的研究进展;马书蕊等;《电瓷避雷器》;20051231(第6期);第32-33页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111816398A (en) | 2020-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111816398B (en) | Resistor disc preparation method capable of improving high-current impact stability | |
| US5973588A (en) | Multilayer varistor with pin receiving apertures | |
| CN111606703B (en) | Zinc oxide resistance card and preparation method and application thereof | |
| JP2020509582A (en) | Zinc oxide surge arrester valve block with lead-free high insulating ceramic coating and method for preparing it | |
| CN103021608A (en) | High-gradient and high-capacity zinc oxide voltage dependent resistor disc and fabrication method thereof | |
| US5235310A (en) | Varistor having interleaved electrodes | |
| CN105481363B (en) | A kind of big discharge capacity, low residual voltage, high gradient zinc oxide piezoresistor ceramic | |
| CN110937890A (en) | Varistor for lightning arrester and preparation method thereof | |
| CN112341186A (en) | Preparation method of zinc oxide piezoresistor with rare earth oxide additive subjected to pre-solid solution treatment | |
| CN113716952A (en) | Low-gradient large-current impact-stability resistor material and preparation method thereof | |
| CN113506664A (en) | Preparation method of high potential gradient voltage-sensitive resistance chip | |
| EP3819921B1 (en) | Zinc oxide varistor ceramics | |
| CN110668808B (en) | SnO with high nonlinearity, low residual voltage and large through-current capacity for power transmission of power system2Preparation method of piezoresistor | |
| CN114373591A (en) | Resistance card, preparation process thereof and zinc oxide lightning arrester | |
| IE910870A1 (en) | Varistor ink formulations | |
| KR101968992B1 (en) | Varistor ceramic and the preparing method thereof | |
| CN116655368B (en) | Preparation method of resistor disc capable of improving high-current impact resistance | |
| CN106946561B (en) | Y3+、Nb5+Composite donor doped ZnO pressure-sensitive ceramic and preparation method thereof | |
| CN106946560B (en) | Y3+、Sn4+Composite donor doped ZnO pressure-sensitive ceramic and preparation method thereof | |
| CN106892657B (en) | In3+、Sn4+Composite donor doped ZnO pressure-sensitive ceramic and preparation method thereof | |
| CN113603476B (en) | Preparation method and electrochemical test of multi-point electrode zinc oxide pressure-sensitive ceramic | |
| CN113173784B (en) | Zinc oxide resistor disc capable of reducing residual voltage ratio and preparation method thereof | |
| CN105622087B (en) | A kind of system for ultra-high voltage transmission big discharge capacity, low residual voltage voltage-sensitive ceramic preparation method | |
| CN108774061B (en) | High-performance zinc oxide piezoresistor dielectric material and preparation method thereof | |
| CN113851250B (en) | Overload-voltage-resistant resistance paste and preparation method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |