CN101501934B - 使用人造磁性层的天线阵列和单元 - Google Patents

使用人造磁性层的天线阵列和单元 Download PDF

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CN101501934B
CN101501934B CN2007800296795A CN200780029679A CN101501934B CN 101501934 B CN101501934 B CN 101501934B CN 2007800296795 A CN2007800296795 A CN 2007800296795A CN 200780029679 A CN200780029679 A CN 200780029679A CN 101501934 B CN101501934 B CN 101501934B
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ground plane
aml
dielectric layer
antenna
plane components
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CN101501934A (zh
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J·赛利
M·考尼斯托
S·A·特雷特亚科夫
C·西莫夫斯基
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Nokia Solutions and Networks Oy
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
    • H01Q1/523—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas between antennas of an array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/006—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
    • H01Q15/008—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces said selective devices having Sievenpipers' mushroom elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/061—Two dimensional planar arrays
    • H01Q21/065—Patch antenna array

Abstract

一种天线阵列，其包括多个天线单元、接地平面和至少一个人造磁性层(AML)单元。至少一个AML单元设置于至少两个相邻天线单元之间。该AML单元包括一对穿过环形介电层的环形开口谐振器，并且该谐振器通过电容介电层容性地联接到天线阵列的接地平面上。谐振器互相垂直且垂直于接地平面，并且每个AML单元中可限定一对以上的谐振器。来自天线单元的磁能感应出谐振器内的电场，并且由此引起的磁场强烈地结合AML单元，通过抑制表面波的传播来抑制辐射元件之间的互耦合。

Description

使用人造磁性层的天线阵列和单元
技术领域
本发明涉及天线阵列，例如设置于共同基底(substrate)/接地平面(ground plane)的单元天线，使得沿该基底/接地平面传播的能量在设计考量欠缺时可能导致天线在传送和/或接收模式下的互耦合。此天线阵列可设置于卫星或陆用网络元件中，以及与这些网络元件通信的手持式可携收发器中。
背景技术
用于在不同频率进行通信的复合天线辐射体元件特别地使用在卫星和陆用移动通信网络的基地收发器站中，但其也日渐使用在手持式可携收发器中。这些设备经常同时在完全不同的频带通信。为了节约空间和重量，复合天线有时应用如同天线辐射体元件的有组织的阵列形式中。
典型地，基地天线可再构造以适应不同的环境。可再构造的天线在较小存货需求时可为节约操作员和制造者大量的金钱。一般地，需要具有不同波束宽度及增益值的一大组天线。可再构造的天线可以在安装前手动设置，或者在天线杆上以电子方式设置。智能天线或适应性天线甚至有更多的要求，因为它们需要在某些方向产生具有最大值和最小值的复杂的辐射图。这些天线使用相控阵技术来合成所需的波束。
辐射元件同时在不同的频带上通信会引起天线元件之间互耦合的现象，该现象可能降低每一个天线元件的性能，其在使用相位阵技术的智能基地天线中可能导致严重的问题。不同天线放射元件之间的互相干涉会降低阵列的方向性，可能导致元件失调，并且形成盲点(即主波束无法指引到的方向)。如果互耦合低于某个级别，取决于具体应用可对阵列性能进行折衷。
已经熟知可以通过增加天线放射元件之间的物理间距来减小互耦合，其会导致阵列中天线尺寸的增大。参见C.A.Balanis著“ANTENNA THEORY：ANALYSIS AND DESIGN”(John Wiley andSons，Inc.，2nd ed.，1997)书中的实例。此类放射元件之间间距的增大也会导致辐射图中旁瓣电平的增大。接近半波长的正常间距会导致接近约-20dB的互耦合级别。下文中列举了一些用于减小互耦合的更先进的方法。
一种用于减小天线元件之间的互耦合的方法是通过选择基底材料来使表面波降低最小。例如，在F.Rostan，E.Heindrich，W.Wiesbeck完成的题为“High-Performance C-Band Microstrip Patch Subarray withDual Polarization Capabilities”(PIER’94，pp.1-4)的研究中，在5.3GHz频率比较了Duroid和Rohacell基底。低介电常数(εr＝1.15)的Rohacell基底不支持表面波并且互耦合接近-30dB，其缺点是天线会变大。在具有高介电常数(εr＝2.2)的Duroid基底中，互耦合级别约为-23dB。
另一种方法是使用干涉效应来消除互耦合。在H.Wong，K.L.Lau，K.M.Luk，“Design of Dual-Polarized L-Probe Patch Antenna Arrays withHigh Isolation”，IEEE Trans.Ant.Propag.，Vol.52，No.1，Jan.2004，pp.45-52以及L.D.Bamford，J.R.James，A.F.Frey，“Minimising MutualCoupling in Thick Substrate Microstrip Antenna Arrays”，ElectronicsLetters，Vol.33，No.8，10th April，1997，pp.648-650中指出一些情况下这种方法可能合适。干涉部件可以是基底中的表面波和天线之间空气中的空间波。这种技术本质上是窄频带，但可实现约-45dB级别的互耦合。
可以应用天线阵列的结构修正来减小互耦合。这些修正包括如H.Wong等的论文中所提到的天线元件的单个屏蔽、接地平面波纹、使用分条贴片(gridded patch)用于正交性、天线元件的空腔反射(cavitybacking)以及在基底或接地平面中使用切口。使用这些技术得到的预期互耦合级别在大约-25dB至大约-30dB之间。
在接地平面中使用光子带隙(PBG)材料也能用来减小互耦合。已有报告在较高频率上(如5.8GHz)工作的天线阵列的共同接地平面中使用PBG贴片，但是该发明人没有意识到有工作显示此技术也可有效地用于典型的移动电话/蜂窝通信频率(如2GHz或更低，特别是UMTS范围1.92-2.17GHz以及GSM范围0.824-0.960GHz和1.710-1.990GHz)。问题典型地在于，通常已知的PBG结构、如蘑菇形PBG和单平面UC-PBG，在低微波频率的尺寸过大。
发明内容
根据本发明教导中描述的实施例克服了上述问题，并且实现了其它优势。
根据本发明的一个示范性实施例，提供了一种天线阵列，其包括多个天线单元和至少一个人造磁性层(AML)单元。天线单元设置于阵列中且互相隔开。每个天线单元都包括辐射元件和接地平面元件。AML单元设置于一些相邻天线单元的至少两个之间。该AML单元包括至少一对环形开口谐振器(split-ring resonator)。该AML单元容性地耦合到相邻天线单元的接地平面元件上。
另外，根据本发明的另一个示范性实施例，提供了一种装置，其包括设置于共同基底的单元阵列。每个单元包括第一电介质材料层，其具有第一主表面及相对的第二主表面、邻近于第一主表面设置的第二介电层、设置于第一电介质材料层的相反的主表面上的一对交叉传导迹线以及穿过第一电介质材料层但不穿过第二电介质材料层的至少四个传导通道。每个传导通道互相间隔开且耦合传导迹线。
根据另一实施例提供了一种制造天线阵列的方法。在该方法中，提供特别适合于把天线单元和下文中描述的瓦状物(tilt)部件保持成互相间隔的关系的基底。紧固多个天线单元到该基底上，以使得每个天线单元相互间隔开。每个天线单元包括与辐射元件间隔开的接地平面元件。在每对相邻天线单元之间瓦状物被紧固到基底上。该瓦状物包括人造磁性层AML单元阵列。每个AML单元都包括具有第一表面和第二表面的环形介电层、耦合第一表面的电容介电层、邻近于第二表面设置的传导迹线对以及穿过环形介电层但不穿过电容介电层的一组至少四个传导通道。每个传导通道互相间隔开并耦合一个传导迹线对。然后电容介电层容性地耦合AML单元到至少一个接地平面元件上，例如通过与其中一个天线单元进行传送或接收来产生其接地平面元件中的表面波。
根据本发明的另一实施例提供了一种阵列装置，其包括用于在一频率上无线传送RF能量的多个装置、用于抑制无线传送RF能量的多个装置之间的互耦合的多个装置以及传导器件。用于无线传送RF能量的器件以互相隔开的关系形成阵列。每个用于抑制互耦合的器件设置于邻近的用于无线传送RF能量的多个装置之间，并且每个用于抑制互耦合的器件都包括至少一个环形开口谐振器。传导器件用于将多个用于抑制互耦合的器件中的每一个互相进行电耦合。另外，在该阵列装置中，传导器件与每个用于抑制互耦合的器件设置于共同接地平面内。在一个实施例中，用于在某一频率上无线传送RF能量的装置包括天线单元的辐射元件，并且用于抑制互耦合的器件包括至少一个AML单元。
不同实施例和实现方式的更具体的细节将与下文中详细描述。
附图说明
结合附图阅读下文中的具体实施方式会使本发明的上述以及其它方面变得更加明显，其中：
图1是收发器耦合到天线阵列的功能块示意图。
图2是用于构造根据本发明的一个实施例的天线阵列的测试装置的示意图。
图3是根据本发明的一个实施例的人造磁性层单元的透视图，该人造磁性层单元设置于如图2所示的阵列中的天线单元之间。
图4是显示了根据本发明的一个实施例的AML单元的瓦状物的示意图，该AML单元沿接地平面设置于天线阵列中的天线单元之间。
图5是频率(水平向)相对信号水平(dB)的现有技术图表，显示了当PBG材料使用在天线单元之间的接地平面中时，天线单元之间的互耦合。
图6是与图5相似的图表，但显示了根据本发明的一个实施例的天线单元之间互耦合，该天线单元之间具有五组AML单元。
具体实施方式
本领域所需要的是这样一种装置——其用于安排天线元件或天线单元的阵列以控制在某些频率上的天线单元之间的互耦合，这些频率特别地包括蜂窝通信频率，例如1920至2170MHz的UMTS频带。优选地，这样的解决方法能够使小型设计成为可能——该设计不依靠天线单元之间的物理间距来控制互耦合。
图1显示了设备10的相应功能块的示意图，所描述的发明可以有利地设置于例如基地收发器站或移动站内。收发器12按访问存储器16的处理器14的控制而处理输入及输出信号。这些部件12，14，16共同编码和解码、扩码和解扩、加密/解密、复用/去复用以及调制/解调那些输入及输出信号。存储器或多个存储器16可以是适用于当地技术环境的任何类型，并且可以使用任何适合的数据存储技术来实现，例如基于半导体的存储设备、磁性存储设备及系统、光学存储设备及系统、固定存储器以及可移动存储器。数据处理器14可以是适用于当地技术环境的任何类型，并且可以包括一个或多个普通用途的电脑、特殊用途的电脑、微处理器、数字信号处理器(DSP)以及基于多核心处理器架构的处理器等无限制的实例。
放大器18施加增益于上行或下行的信号，并且可耦合到发送/接收开关或双向滤波器上以使同向双工信号传播成为可能。这些信号通过天线阵列20来传送和接收，该天线阵列20包括多个天线单元22(示出两个)和位于天线单元22之间的至少一个人造磁性层(AML)单元24(示出流个AML单元)。每个天线单元22都包括辐射元件26和用间隔物30相互间隔开的接地平面元件28，该间隔物可以是如图所示的垂直定位的支柱，或者是具有确定的并且经工程设计的厚度的绝缘材料层。每个辐射元件28耦合到收发器上以使能各个天线单元22的选择和波束成形，以用于不同频率上的传送或接收。AML单元24与接地平面元件26共面并与其电耦合，以在功能上形成整个天线阵列20中的单位接地平面32。正如下文中所描述的，AML单元24的运转将破坏邻近单元22之间的互耦合，由于接地平面中的TE-模式(横向电场)及TM-模式(横向磁场)表面波传播，在已知的设计中会出现这种互耦合。
于此描述的本发明的实施例提供了数个独特的优势。特别地，降低了不同单元22或辐射元件28之间的宽带的互耦合，例如在2GHz范围，当天线单元22/辐射元件28相对AML单元26针对该频率或任意所需频率范围进行优化配置时，使用AML单元24。图6显示了当使用(如图1所示)加入AML单元24的连续接地平面32时，两个辐射元件之间的互耦合的测量值。天线间距在2GHz条件下接近0.7λ0自由空间波长)。
虽然已知的用于在微波及毫米波频率降低互耦合的解决方案没有使用人造高阻抗表面来扩展天线辐射器间的间距，但于此公开的本发明的实施例采用相邻天线单元22之间的AML单元24来阻止沿接地平面32的电磁能量传播，该电磁能量传播会产生辐射元件28之间的互耦合。在操作中，磁场通过辐射元件28而引入AML单元24，其感应产生AML单元24和单个接地平面32的金属部件中的电流。AML单元24的几何形状选择成使得AML单元24中全部或基本上全部被感应的磁场部件与该AML单元24强烈地互相作用。在已知的光子带隙(PBG)表面解决方案中，仅切向场能够有效地激励那些PBG结构。
图2是测试装置的示意图，根据本发明其可用于优化天线阵列，作为一不受限的实例，其用于在UMTS频率范围使用。根据本发明实施例的天线阵列20配置成类似于图2中的测试装置。如上文描述的，多个天线单元22(示出九个)以间隔关系配置于连续接地平面32上，其中每个天线单元22包括辐射元件26和接地平面元件28。接地平面元件28可以形成连续接地平面的一部分，或者与分离的连续接地平面电接触配置。在测试装置中，各个天线单元22在它们的接地平面28处安装在刚性基底34上，并且多个瓦状物36相对于接地平面32相似地配置在天线元件22之间。每个瓦状物36由横向排列的多个AML单元24制成，以形成平放在相邻天线单元22之间的AML单元阵列。瓦状物安装成大致与接地平面元件28共面，以使得瓦状物36和各个天线单元22的接地平面元件28共同形成接地平面32。在如图2所示的测试装置中，瓦状物36通过与基底的磁耦合被保持在适当位置。磁耦合也可用于运转中的天线阵列20，用来帮助从瓦状物36和天线单元22的零件中就地制造出适合特殊频带的阵列。虽然在测试装置中使用导电带将接地平面28耦合到瓦状物36上，特制导电桥也可采用在运转的天线阵列20中用来形成电接地耦合。本发明实施例的应用并不禁止天线单元22的紧密横向间隔，其间隔甚至在一半波长之内，以使小型物理空间之内的宽频天线阵列成为可能。
图3显示了AML单元24的构造，其形成瓦状物36。注意瓦状物36可以由AML单元的行与列整个地形成，或者作为替换也可以具有限定用于在传导边界内接受AML单元的间隔，该传导边界可以是例如耦合个体天线单元22的接地平面元件28的框架(如通过上文所述的桥接)。AML单元24是多层装置，其起人造磁性材料的作用，并且包括第一介电层，称为环形介电层38；第二介电层，称为电容介电层40，其配置成与环形介电层38的一个主表面相对；以及位于两者之间的潜在的粘接层42。介电层38，40的两者之一或全部可由任何不同金属氧化物、特氟纶或其他本领域已知的电介质材料制成。对于层38，40的电介质材料的选择将确定粘接层42是否必需或有益，以及确定粘接层42的材料类型。当配置于天线阵列中时，电容介电层40的下主表面与天线阵列20的接地平面电接触，因此当能量沿接地平面传播时，电容介电层40上形成电容。
环形介电层38构造形成成对的环形开口谐振器(图3示出两个环形开口谐振器)，其中一对中的每个谐振器与该对的另外一个谐振器垂直。如图3所示，四个导电通道46穿过环形介电层38并通过设置于环形介电层38的主表面上的传导带44或者绳互相耦合，环形介电层38相对电容介电层40放置。每对通道46与其传导带形成环形开口谐振器。由于通道46垂直于整个阵列的接地平面，环形谐振器回路也垂直于接地平面放置。磁场结合沿接地平面传播的能量在每对环形开口谐振器中感应出电流，由于环形谐振器是裂开的(在邻近粘接层42的区域)，防止了该电流的流动。环的裂开极大地增大其谐振频率，虽然图中显示了直线的传导带44，但也可以使用其它图案来形成裂环，如耶路撒冷十字形或希腊十字形。虽然衬垫(pads)仅在图3中沿传导带44处显示，但传导衬垫也可设置在传导带的相对端，当通道46被涂上而不是被充满传导材料时特别有益。
虽然图3显示了两个环形开口谐振器，该示例通过增加更多的层与通道可以延伸至四对、六对或者任意对环形开口谐振器。例如四个额外的传导通道46可以设置在图3所示的结构的角落处，并且通过平放在设置于示出的带46之上的绝缘层(未示出)上的传导带44耦合，以使得示出的环对与额外的环对相互间无电耦合。此技术可延伸至多个环对，并且绝缘层可以或可以不具有最小厚度。
在实行中，通过强加随时间变化的外部磁场，使图3中的结构24的环形开口谐振器中产生感应电流，从而使得结构24变得有磁性，因此结构24作为人造磁性层工作。环的传导通道46中感应产生的电场位于垂直方向，所以磁场位于水平方向，其致使感应磁场的大致全部部件与AML单元结构24的环形介电层38强烈地互相作用。
设计这些环的尺寸以及选择用于AML单元中的层38，40的电介质材料能够使人们设计出对于施加磁场的期望的磁响应，并且这种“人造”磁响应能简单地制成比与自然磁体、例如在低微波频率上(如UMTS频带)的铁类金属相关的磁场大得多，。自然磁性材料中发现的磁响应是人造磁性材料理论上可能达到的一小部分子集。例如，人造电响应在带比波长小得多的间隔的金属线网格中可被感应。人造磁性材料，也被称为超材料，可以设计成用于磁场，其比那些在自然磁性材料中发现的要好得多。
在天线领域，自然磁性材料在微波状态下会失去它们显著的磁性特征或者变得损耗很大。在本发明的实施例中通过从非磁性成分中设计出AML单元24而实现期望的磁性特征。通过设计AML单元24从期望的射频RF场(如UMTS频带，约1920-2170MHz)中产生足够的磁场，一个辐射元件26的近场可被重新分配，以防止与来自附近的辐射元件26的波瓣的互耦合。在几乎所有的场合，由于与非邻近辐射元件26间距的增大很大程度地减轻了耦合，因此仅邻近的辐射元件26涉及到互耦合。因为AML单元24中的针对辐射元件26处指定波长的感应磁场被设计成远强于在典型自然磁性材料中发现的，并由于AML单元24降低了表面波沿接地平面的传播，且通过装置而非简单的依波长而定的间隔造成的衰减来抑制相邻天线单元22之间的互耦合，所以天线单元22的辐射效率被提高。
本发明的一个重要方面在于AML单元24和接地平面28元件形成一致的、单个的接地平面32。更宽阔的接地平面32，且并不仅是单独天线单元22的接地平面元件28，与运转的辐射元件26一起工作以发射RF能量。假如仅单个单元22的接地平面元件28与辐射元件26一起工作来传送RF波，那么由于相邻天线单元22之间的表面波，将不会产生互耦合，因为更宽阔的接地平面32不会传播能量。然而，具有共同接地平面32的天线阵列20会变得更有效，不管单个天线单元22是否包括它们自身的成为共同接地平面32中一部分的接地平面元件28。当多个AML单元24设置于相邻天线单元22之间时，每个AML单元24作为来自一个辐射元件26的RF能量的扩散器，否则其会传播和结合其它辐射元件26。
在测试如图2所示的装置中，发明人发现如图3所示位于天线单元22之间的一组至少五个AML单元会导致相邻天线单元22之间的从-30dB到-37dB的互耦合。在测试阵列中，天线单元设置于三个圆柱内，每个圆柱包含三个天线单元22，并且五个AML单元设置于邻近圆柱的相邻天线单元22之间。通过在瓦状物36上设置AML单元24阵列，在不需要针对特殊频率设计特别的AML单元24的情况下，不同的天线阵列20可以从不用定制的部件或者瓦状物36及天线单元22制成以用于特殊频带，因为多余的AML单元24(超出降低耦合的递减回报的一些点)只是剩余物，并且其运转用于进一步降低阵列的辐射元件26之间的互耦合。
图4显示了由不用定制的部件制成的此天线阵列可能的设置。可采用不同于图2中所示的基底(未示出)来利用磁性把部件紧固就位。备选地，也可采用螺丝、粘合剂或其它更持久的粘接方案来将部件互相定位。此基底用作其上建造有天线阵列的结构，并且不需要在功能上与互相就位的保持部件分离。多个天线单元22配置于该基底的表面上。在每对邻近的天线单元之间22放置AML单元24的瓦状物36，其中瓦状物36上的每个黑圈表示一个AML单元24。优选地，瓦状物36在每一行包括至少五个AML单元，且在每一列包括至少五个AML单元，以使得设置一个瓦状物36能在UMTS频带有效地降低互耦合至-30dB以下的级别。假如全部天线单元之间22的整个空间没有被瓦状物36填满，额外的接地平面填充板48可以设置用来填满缺口。天线单元22的每个瓦状物36、接地平面填充板48以及接地元件28位于大致同一平面内并且互相成电耦合以形成连续的且小型的接地平面32，天线单元22的任何单个辐射元件26都可与该接地平面32共同用来传送和接收RF能量。如上所述，这些接地平面元件之间的电耦合可以通过导电带，或者优选地通过横跨邻近瓦状物/板/接地元件之间的横向缺口的、为此目的而制造的传导桥。
图3中的多个单元可由单个工艺制程具有恒定厚度用于介电层38，然后切割成为单个的AML单元24用于和其它AML单元24一起安装到瓦状物36上。在一个实施例中，AML单元24的厚度h约为2mm。针对2GHz范围，介电层40约为0.5mm，环形介电层38约为1.6mm，且粘接层42约为0.04mm，总厚度约为2.14mm。(包括用于传导带44的一些最小限度的额外厚度以及任何额外的在其之上的保护层)。从此基准线开始，厚度h的刻度比例与频率几乎呈线性关系，另外需要说明的事实是粘接层42和传导带44的厚度不需要按比例计算。例如，针对1GHz来按比例计算上述的尺寸，会得到约为1.0mm的电容介电层40和约为3.2mm的环形介电层38，总厚度为4.24mm。通过相似的外推法能得到针对4GHz范围的总厚度约为1.09mm。AML单元24的横向尺寸也能针对不同频带进行调整(如改变环形开口谐振器的间距)。对于中心频率为2GHz，AML单元24测量值约为9mm平方(具体地，测试结果为8.8mm)。
能够看出本发明的示范性实施例在用于采用智能适应天线的扫描天线阵列时具有优势。智能适应天线用反馈机制来波束成形以适应当地的RF环境。AML单元24的瓦状物36能嵌入天线单元22之间以形成例如图1和图4中显示的天线阵列20。用于UMTS频带(1920-2170MHz)的有利的天线阵列20包括设置成8×4栅格的32个天线单元，且天线单元之间全部的横向间隔都填充AML单元的瓦状物36，每个瓦状物承载至少5x五个AML单元，其中至少一个瓦状物36位于每个邻近单元对22之间。天线单元22之间的间距不需要被限制在依据预期波长的最小距离，因此整个天线阵列20可能小于现有技术中在至少半波长的物理间距下所制成的天线阵列。天线单元22可包括双重极化的UMTS天线元件，并且在带有双重斜极化天线时特别有益。天线极化发散性对于波束成形变得更加重要。双重斜极化天线减少了在波束成形阵列中所需天线的数量，并且典型地显示出对称的水平及垂直的宽度为65-75度的波束。
图5是显示了经测量的天线单元22之间的输入匹配和互耦合的图表，使用了类似于图2和图4中的配置，但具有传统的所有天线单元共有的接地平面，该图表显示沿水平轴的频率和沿垂直方向的单位为dB的互耦合。接近2.0GHz区域与无线电话通信相关。两个测试天线端口的输入匹配显示为S11和S77曲线，其非常相似。在约2.0GHz处，S71的互耦合大约为-24dB。测试中的天线间隔为0.7λ0(其中λ0是自由空间波长)。测量出的互耦合的结果反映了大多数现代基地中的天线阵列的真实性能水平。
图6是与图5类似的图表，但显示了当一组五个AML单元24沿接地平面设置于邻近的天线单元22之间时的输入匹配和互耦合。注意图5和图6中垂直比例的不同；图6中的数据显示了在UMTS频带1920-2170MHz下，S71的互耦合为-30dB至-37dB。比较图5与图6能显示出，与使用典型的连续接地平面相比，通过设置AML单元24于天线单元22之间，互耦合有了相当剧烈的降低。
如果AML瓦状物36设置于阵列的列和/或行之间，任何天线阵列20(如基地天线)可以被制造得更小。即使元件26物理上互相靠近，降低了的互耦合也帮助保持天线的匹配。当AML单元24优选地选择成/设计成具有大于一(more than unity)的渗透率时，每个AML单元24可变得比现有技术的光子带隙单元更小，因此能够实现比现有技术更小，但在互耦合方面具有同样性能的天线阵列20。
虽然上文以特别的实施例来描述，但对于本领域的技术人员来说，可能出现对本发明教学的许多更改和不同变化。因而，虽然本发明特别地关于一个或多个实施例来说明，本领域的技术人员应该了解在不脱离本发明于上文所述的范围，或者不脱离权利要求的情况下，可以对本发明进行某些更改或变化。

Claims (8)

1.一种天线阵列，其包括：
设置在阵列中且互相间隔开的多个天线单元；每个所述天线单元都包括辐射元件和接地平面元件；以及
设置于所述天线单元的至少两个相邻的天线单元之间的至少一个人造磁性层AML单元，所述AML单元包括耦合到环形介电层的电容介电层和容性地耦合到所述相邻天线单元的所述接地平面元件上的至少一对环形开口谐振器，使得当能量沿接地平面元件传播时，从接地平面元件在所述电容介电层上形成电容，
其中所述至少一对环形开口谐振器都包括四个穿过所述环形介电层并通过一对传导带互相耦合的传导通道，所述一对传导带沿所述环形介电层的的表面设置，所述表面与面向所述电容介电层的表面相对，
其特征在于，一对中的每个所述环形开口谐振器都互相垂直且与所述接地平面元件垂直。
2.根据权利要求1所述的天线阵列，其特征在于，所述AML单元的阵列设置于至少两个相邻天线单元之间。
3.根据权利要求2所述的天线阵列，其特征在于，所述AML单元的阵列设置于瓦状物中，所述瓦状物可移除地耦合到所述天线阵列，并且所述AML单元的阵列包括至少五个AML单元。
4.根据权利要求3所述的天线阵列，其特征在于，AML单元的阵列设置于多个所述天线单元的每个相邻对之间。
5.根据权利要求1所述的天线阵列，其特征在于，所述AML单元与所述相邻天线单元的所述接地平面元件基本上共面。
6.一种制造天线阵列的方法，包括：
提供基底；
紧固多个天线单元到所述基底上，每个所述天线单元都互相间隔开，且每个所述天线单元都包括与辐射元件间隔开的接地平面元件；
在每对相邻天线单元之间把瓦状物紧固到所述基底上，其中所述瓦状物包括人造磁性层AML单元的阵列，每个所述AML单元都包括具有第一表面和第二表面的环形介电层、耦合所述第一表面的电容介电层、由在所述第二表面上设置的传导迹线对形成的至少一对环形开口谐振器，以及穿过所述环形介电层但不穿过所述电容介电层的一组至少四个传导通道，每个所述传导通道互相间隔开并耦合所述传导迹线对；以及
把所述AML单元容性地耦合到至少一个接地平面元件上，使得当能量沿接地平面元件传播时，从接地平面元件在所述电容介电层上形成电容，
其特征在于，所述方法进一步包括将一对中的每个所述环形开口谐振器布置为互相垂直且与所述接地平面元件垂直。
7.根据权利要求6所述的方法，其特征在于，每个所述瓦状物都包括沿直线设置于相邻天线单元之间的至少五个AML单元。
8.根据权利要求7所述的方法，其特征在于，所述瓦状物与所述接地平面元件大致位于同一平面内。
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