CN101499613B - Self-frequency-sum erbium solid laser device - Google Patents
Self-frequency-sum erbium solid laser device Download PDFInfo
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- CN101499613B CN101499613B CN2008100705740A CN200810070574A CN101499613B CN 101499613 B CN101499613 B CN 101499613B CN 2008100705740 A CN2008100705740 A CN 2008100705740A CN 200810070574 A CN200810070574 A CN 200810070574A CN 101499613 B CN101499613 B CN 101499613B
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Abstract
The invention relates to a self frequency-doped solid laser, and belongs to the field of the laser crystal and the device with the laser crystal. A nonlinear laser crystal doped with the Er<3+> ion, which has the nonlinear optical performance, is used as a gain medium; a laser with the wavelength close to 976 or 1480 nanometers is used as a pumping source; the sum frequency phase matching direction of the crystal and the pumping laser at the laser wavelengths of different fundamental waves is determined; the transmission rate of a corresponding laser cavity mirror is designed; and then the solid laser with the sum frequency of 580 to 800 nanometers can be obtained. The method not only can obtain the solid laser with the output of 580 to 800 nanometers, but also can lead the device to have the advantages of compactness, stability, reliability, easy maintenance and minimization and the like.
Description
Technical field
The present invention relates to laser crystal and devices field.
Background technology
Solid state laser has advantages such as beam quality height, reliable and stable, the long service life of running.Along with the development of laser technology and in extensive applications such as information stores, biomedicine, photometry calculation, spectral measurement and Condensed Matter Physics researchs, also more and more urgent to the demand of solid state laser with different output wavelengths.Utilize non-linear laser crystal to have the characteristics of stimulated emission function and non-linear optical property simultaneously, through have compactness from producing with technology frequently, short wavelength's solid state laser of advantages such as reliable and stable, easy care and miniaturization.At present, at many Nd that mix
3+Non-linear laser crystal in utilize from and frequency method realized the output of blue-green Solid State Laser.Yet, owing to receive Nd
3+The restriction of ion self running wavelength for the laser of some wavelength,, utilizes from mixing Nd with the frequency technology near 600nm such as output wavelength
3+Non-linear laser crystal in can't obtain.
At present, with Er
3+The laser crystal of ion doping has been realized the fundamental wave of laser running of 1.5-1.6 micron waveband as gain media.The non-linear optical property that utilizes non-linear laser crystal self to have; The laser that adopts near the wavelength of 976 or 1480 nanometers is as pumping source; Through confirm this crystal different fundamental wave of laser wavelength and pumping laser with frequency phase matched direction; Can to self fundamental wave of laser and remaining pumping laser carries out and frequently, promptly from and frequently, realize 580 to 800nm Solid State Laser output.
Summary of the invention
The objective of the invention is to utilize the Er that self has non-linear optical property
3+The non-linear laser crystal of ion doping is as gain media; Employing can be by the effective laser that absorbs of this non-linear laser crystal as pumping source; Through confirm this crystal different fundamental wave of laser wavelength and pumping laser with frequency phase matched direction and design corresponding laser mirror transmitance; Utilize this crystalloid from characteristic frequently, obtain near 600 nanometers and long wavelength's Solid State Laser more.
The present invention includes following technical scheme:
1. oneself and frequency Erbium Lasers device are by pumping system, laser mirror and Er
3+The non-linear laser crystal of ion doping is formed, and it is characterized in that: this laser is with Er
3+The non-linear laser crystal while of ion doping reaches and the frequency element as gain matrix; The both ends of the surface edge of non-linear laser crystal is perpendicular to cutting with phase matched direction frequently certainly; Employing can be by the effective laser that absorbs of this non-linear laser crystal as pumping source; Obtain the fundamental wave of laser running of 1.5-1.6 micron waveband, utilize nonlinear optical effect that laser crystal self has with remaining pumping laser and frequently again, realize from exporting with Solid State Laser frequently with this fundamental wave of laser.
2. like 1 a described laser, it is characterized in that: described non-linear laser crystal is Er
xYb
yR
(1-x-y)Al
3(BO
3)
4Or Er
xYb
yR
(1-x-y)Ca
4O (BO
3)
3Crystal, x=0.5～10mol% wherein, y=0～50mol%, R are the combination of a certain element or some elements in Sc, Y, La, Gd, the Lu element.
3. like 1 a described laser, it is characterized in that: described pumping source is that output wavelength is near the continuous or pulse laser of wavelength 976 or 1480 nanometers.
4. like 1 a described laser, it is characterized in that: directly, constitute a laser that does not have independent input cavity mirror and output cavity mirror at the both ends of the surface plating laser mirror film of laser crystal.
5. a dual wavelength Erbium Lasers device is characterized in that: in item 1 described laser cavity, insert the frequency multiplication element at 1.5-1.6 micron waveband place, export simultaneously certainly and the dual wavelength Solid State Laser of frequency and intracavity frequency doubling.
6. like 5 a described laser; It is characterized in that: an end face of described non-linear laser crystal and an end face of described frequency multiplication element are pasted; Plate input cavity mirror film and output cavity mirror film, the Solid State Laser of output dual wavelength respectively at another end face of non-linear laser crystal and another end face of frequency multiplication element.
7. like 6 a described laser, it is characterized in that: described non-linear laser crystal and frequency multiplication element are separated.
The beneficial effect that utilizes the solid state laser of technical scheme manufacturing of the present invention to have is can not only obtain to have near 600 nanometers and more long wavelength's Solid State Laser output, and can make device have advantages such as compactness, reliable and stable, easy care and miniaturization.
Embodiment
Instance 1:970nm semiconductor laser end pumping Yb
3+And Er
3+The two YAl that mix of ion
3(BO
3)
4Crystal is realized from exporting with frequency 604nm laser.
With doping 25mol%Yb
3+And 1.1mol%Er
3+YAl
3(BO
3)
4The crystal both ends of the surface along perpendicular to 1600 with the I class of 970nm wavelength and phase matching angle θ frequently=27.1 °; φ=0 ° directed cutting; Confirm the size (be generally end area and arrive square centimeter at square millimeter, length is several millimeters square column or cylinder) of crystal simultaneously.Then the crystal end-face polishing is placed in the laser cavity.The input cavity mirror passes through in that the 970nm wavelength is high, 604 with 1600nm wavelength high anti-(R＞99%).The output cavity mirror 970 with 1600nm wavelength high anti-(R＞99%), at high pass through (T＞80%) of 604nm wavelength.Utilize 970nm semiconductor laser end pumping can obtain the orange solids laser of 604nm wavelength.Also can chamber mirror film directly be plated on two end faces of non-linear laser crystal, to realize same purpose.
Instance 2:970nm semiconductor laser end pumping Yb
3+And Er
3+The two YAl that mix of ion
3(BO
3)
4Crystal is realized from exporting with frequency 592nm laser.
With doping 15mol%Yb
3+And 1.1mol%Er
3+YAl
3(BO
3)
4The crystal both ends of the surface along perpendicular to 1520 with the I class of 970nm wavelength and phase matching angle θ frequently=27.6 °, φ=0 ° directed cutting.Confirm the size (be generally end area and arrive square centimeter at square millimeter, length is several millimeters square column or cylinder) of crystal simultaneously.Then the crystal end-face polishing is placed in the laser cavity.The input cavity mirror passes through in that the 970nm wavelength is high, 592 with 1520nm wavelength high anti-(R＞99%).The output cavity mirror is at 970nm wavelength high anti-(R＞98%), and 1520nm wavelength transmitance is 4%, at high pass through (T＞80%) of 592nm wavelength.Utilize 970nm semiconductor laser end pumping can obtain the orange solids laser of 592nm wavelength.Also can chamber mirror film directly be plated on two end faces of non-linear laser crystal, to realize same purpose.
Instance 3:976nm pulse semiconductor laser end pumping Yb
3+And Er
3+The two GdAl that mix of ion
3(BO
3)
4Crystal is realized from exporting with frequency 606nm pulse laser.
With doping 20mol%Yb
3+And 1.3mol%Er
3+GdAl
3(BO
3)
4The crystal both ends of the surface along perpendicular to 1600 with the I class of 976nm wavelength and phase matching angle θ frequently=27 °, φ=0 ° directed cutting, confirm simultaneously crystal size (be generally end area at square millimeter to square centimeter, length is several millimeters square column or cylinder).Then the crystal end-face polishing is placed in the laser cavity.The input cavity mirror passes through in that the 976nm wavelength is high, 606 with 1600nm wavelength high anti-(R＞99%).The output cavity mirror 976 with 1600nm wavelength high anti-(R＞99%), at high pass through (T＞80%) of 606nm wavelength.Utilize 976nm pulse semiconductor laser end pumping can obtain the pulse orange solids laser of 606nm wavelength.Also can chamber mirror film directly be plated on two end faces of non-linear laser crystal, to realize same purpose.
Instance 4:1480nm semiconductor laser end pumping Er
3+The YAl of ion doping
3(BO
3)
4Crystal is realized from exporting with frequency 769nm laser.
With doping 2.0mol%Er
3+YAl
3(BO
3)
4The crystal both ends of the surface along perpendicular to 1600 with the I class of 1480nm wavelength and phase matching angle θ frequently=23.8 °; φ=0 ° directed cutting; Confirm the size (be generally end area and arrive square centimeter at square millimeter, length is square column or the cylinder between several millimeters to several centimetres) of crystal simultaneously.Then the crystal end-face polishing is placed in the laser cavity.The input cavity mirror passes through in that the 1480nm wavelength is high, 769 with 1600nm wavelength high anti-(R＞99%).The output cavity mirror 1480 with 1600nm wavelength high anti-(R＞99%), at high pass through (T＞80%) of 769nm wavelength.Utilize 1480nm semiconductor laser end pumping can obtain the near-infrared Solid State Laser of 769nm wavelength.Also can chamber mirror film directly be plated on two end faces of this non-linear laser crystal, to realize same purpose.
Instance 5:970nm semiconductor laser end pumping Yb
3+And Er
3+The two YAl that mix of ion
3(BO
3)
4Crystal is realized from exporting simultaneously with the dual-wavelength laser of frequency 604nm and frequency multiplication 800nm.
In instance 1, insert β-BBOJing Ti along the I class frequency multiplication phase matching angle cutting of frequency multiplication 1600nm laser (θ=19.9 ° between non-linear laser crystal and the output cavity mirror;
=0 °), will from process frequently after remaining 1600nm fundamental wave of laser frequency multiplication.The input cavity mirror passes through in that the 970nm wavelength is high, and 604,800 and 1600nm wavelength high anti-(R＞99%).The output cavity mirror 970 with 1600nm wavelength high anti-(R＞99%), 604 with high pass through (T＞80%) of 800nm wavelength.Utilize 970nm semiconductor laser end pumping can realize that 604 export with the dual-wavelength laser of 800nm simultaneously.Perhaps; An end face of non-linear laser crystal and an end face of frequency-doubling crystal are pasted; Again with another end face of another end face of non-linear laser crystal and frequency-doubling crystal plate be fit to 970nm infrared laser end pumping, laser resonance and output from and the deielectric-coating of 604nm and frequency multiplication 800nm laser frequently, utilize 970nm semiconductor laser end pumping also can export simultaneously 604 with the Solid State Laser of 800nm.
Claims (5)
1. oneself and frequency Erbium Lasers device are by pumping system, laser mirror and Er
3+The non-linear laser crystal of ion doping is formed, and it is characterized in that: this laser is with Er
xYb
yR
(1-x-y)Al
3(BO
3)
4Non-linear laser crystal simultaneously as gain matrix and with element frequently, x=0.5～10mol% wherein, y=0～50mol%, R are the combination of a certain element or some elements in Sc, Y, La, Gd, the Lu element; The both ends of the surface edge of non-linear laser crystal is perpendicular to cutting with phase matched direction frequently certainly; Adopt output wavelength be near 976 or 1480 nanometers wavelength continuously or pulse laser as pumping source; Obtain the fundamental wave of laser running of 1.5-1.6 micron waveband; Utilize nonlinear optical effect that laser crystal self has and frequently again with this fundamental wave of laser and remaining pumping laser, realize from Solid State Laser output frequently.
2. laser as claimed in claim 1 is characterized in that: directly at the both ends of the surface plating laser mirror film of laser crystal, constitute a laser that does not have independent input cavity mirror and output cavity mirror.
3. a dual wavelength Erbium Lasers device is characterized in that: in the described laser cavity of claim 1, insert the frequency multiplication element at 1.5-1.6 micron waveband place, export simultaneously certainly and the dual wavelength Solid State Laser of frequency and intracavity frequency doubling.
4. laser as claimed in claim 3; It is characterized in that: an end face of described non-linear laser crystal and an end face of described frequency multiplication element are pasted; Plate input cavity mirror film and output cavity mirror film, the Solid State Laser of output dual wavelength respectively at another end face of non-linear laser crystal and another end face of frequency multiplication element.
5. laser as claimed in claim 4 is characterized in that: described non-linear laser crystal and described frequency multiplication element are separated.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100705740A CN101499613B (en) | 2008-01-31 | 2008-01-31 | Self-frequency-sum erbium solid laser device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100705740A CN101499613B (en) | 2008-01-31 | 2008-01-31 | Self-frequency-sum erbium solid laser device |
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| Publication Number | Publication Date |
|---|---|
| CN101499613A CN101499613A (en) | 2009-08-05 |
| CN101499613B true CN101499613B (en) | 2012-02-22 |
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|---|---|---|---|
| CN2008100705740A Expired - Fee Related CN101499613B (en) | 2008-01-31 | 2008-01-31 | Self-frequency-sum erbium solid laser device |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1046414A (en) * | 1989-04-15 | 1990-10-24 | 中国科学院福建物质结构研究所 | Laser Devices with the manufacturing of aluminium yttrium neodymium tetraborate monocrystal |
| US5388114A (en) * | 1994-03-17 | 1995-02-07 | Polaroid Corporation | Miniaturized self-Q-switched frequency-doubled laser |
| US6301275B2 (en) * | 1999-02-02 | 2001-10-09 | University Of Central Florida | Self-frequency doubled Nd-doped YCOB laser |
| CN1464602A (en) * | 2002-06-20 | 2003-12-31 | 中国科学院福建物质结构研究所 | Visible waveband dual-wavelength solid laser |
| CN1832276A (en) * | 2006-04-14 | 2006-09-13 | 山东大学 | Barium acid lutetium crystal micro-chip laser device of mixing with active ions |
-
2008
- 2008-01-31 CN CN2008100705740A patent/CN101499613B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1046414A (en) * | 1989-04-15 | 1990-10-24 | 中国科学院福建物质结构研究所 | Laser Devices with the manufacturing of aluminium yttrium neodymium tetraborate monocrystal |
| US5388114A (en) * | 1994-03-17 | 1995-02-07 | Polaroid Corporation | Miniaturized self-Q-switched frequency-doubled laser |
| US6301275B2 (en) * | 1999-02-02 | 2001-10-09 | University Of Central Florida | Self-frequency doubled Nd-doped YCOB laser |
| CN1464602A (en) * | 2002-06-20 | 2003-12-31 | 中国科学院福建物质结构研究所 | Visible waveband dual-wavelength solid laser |
| CN1832276A (en) * | 2006-04-14 | 2006-09-13 | 山东大学 | Barium acid lutetium crystal micro-chip laser device of mixing with active ions |
Non-Patent Citations (1)
| Title |
|---|
| pu wang et al.diode-pumped cw tunable Er3+：Yb3+：YCOB laser at 1.5-1.6um.《optical materials》.2002, * |
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Granted publication date: 20120222 Termination date: 20220131 |