CN1832276A - Barium acid lutetium crystal micro-chip laser device of mixing with active ions - Google Patents
Barium acid lutetium crystal micro-chip laser device of mixing with active ions Download PDFInfo
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- CN1832276A CN1832276A CN 200610043591 CN200610043591A CN1832276A CN 1832276 A CN1832276 A CN 1832276A CN 200610043591 CN200610043591 CN 200610043591 CN 200610043591 A CN200610043591 A CN 200610043591A CN 1832276 A CN1832276 A CN 1832276A
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Abstract
This invention relates to a microchip laser device made of rutherfordium vanadate doped with active ions, which takes the rutherfordium vanadate crystal as the laser medium to manufacture an end face pump microchip laser device to be combined with a non-linear optical Q setting device to constitute a frequency conversion and pulse laser device.
Description
(1) technical field
The present invention relates to a kind of usefulness and mix the micro-chip laser device that the nd-doped lutetium vanadate of active ions is made, belong to laser crystal and devices field.
(2) background technology
Micro-slice laser is simple, the compactest diode pumped solid state laser.Be characterized in chamber mirror deielectric-coating directly is plated on two end faces of high gain lasers crystal, form the long extremely short Ping-Ping resonant cavity in chamber, output beam quality, directivity, monochromaticjty all are better than the near-infrared laser of pumping laser.After adding Q switched element or nonlinear optical crystal, can realize accent Q, frequency multiplication or the mixing of basic frequency laser, obtain the laser output of pulse and visible waveband.This laser has compact conformation, volume is little, threshold value is low, efficient is high, good beam quality, easy and simple to handle, need not optical alignment and maintenance, cost is low, and is convenient to advantages such as industrialized mass production.The outstanding advantage of this class laser is to be convenient to the integrated manufacturing process that adopts current microelectronic generally popular, thereby makes low-costly and in high volume, the large-scale production of high duplication, high reliability becomes possibility.Its development is a substantive technological revolution in Solid State Laser field, has wide demand in many fields such as automation, communication, medical treatment, environmental protection, scientific researches.
The pump mode of micro-slice laser mainly is divided into two kinds: end pumping, profile pump.The optical coupling system of profile pump is simple relatively, and good heat dissipation effect can obtain higher-wattage output, but the size of entire device is bigger, and conversion efficiency is not high yet.The advantage that end pumping has that crystalline size is little, optical coupling efficiency is high, pump light and zlasing mode match, thereby generally speaking laser conversion efficiency is higher, be easy to obtain the laser output of high light beam quality, but that its shortcoming is a radiating effect is poor, generally can only be operated under the lower power levels.
Compare the laser of other types, this design of micro-slice laser realizes laterly, although as far back as generation nineteen sixty the conception of micro-slice laser is just arranged, just really realizes up to the 1980's.The breadboard Zayhowski reported first of U.S. MIT Lincoln in 1989 single-frequency microplate Nd:YAG laser, A.Giesen of technology physics institute of German aerospace studies institute in 1994 etc. has reported the Yb:YAG micro-slice laser of high pumping power.At present, the microchip laser material of comparative maturity has rare-earth-ion-doped YAG, YVO
4, GdVO
4Deng.LuVO
4Be a kind of novel vanadate crystal that occurs in recent years, its monocrystalline laser property until 2002 just by people's reported first such as Maunnier.From existing research, rare-earth-ion-doped LuVO
4The laser activity of crystal is very superior, and this crystal has many advantages such as physical and chemical performance is stable, fast growth, processing facility, emission cross section is big, doping content is high, absorption coefficient is big, absorption bandwidth.With Nd:LuVO
4Crystal is an example, and its absorption and emission cross section are all greater than Nd:YAG, Nd:YVO
4, Nd:GdVO
4Among the three any one, though thermal property is slightly poorer than Nd:YAG, and Nd:GdVO
4Crystal quite is better than Nd:YVO
4All these character show, rare-earth-ion-doped LuVO
4Crystal is very suitable for making the novel micro-chip laser device of high efficiency, miniaturization, and market application foreground is wide.
(3) summary of the invention
In order to solve the problem that the existing existing size of micro-chip laser device is big, device is complicated, power output is little, conversion efficiency is low, the present invention designs a kind of usefulness and mixes the laser medium of the vanadic acid lutetium of active ions as the end pumping micro-chip laser device, and the micro-chip laser device made from it has that size is little, compact conformation, good in thermal property, big, the conversion efficiency advantages of higher of power output.
The present invention is realized by following technical scheme:
Make the end pumping micro-chip laser device with the nd-doped lutetium vanadate of mixing active ions as laser medium, and can constitute frequency conversion, pulse laser device with nonlinear optics, accent Q components and parts.
Making the laser medium that micro-chip laser device adopted is R
xLu
1-xVO
4Crystal, 0＜x≤1 wherein, R
3+Active ions determine that according to factors such as pumping source, laser cavity and application needs it is partially or completely to substitute Lu in the crystal substrate
3+Certain rare earth ion of ion position can be R=Nd, Ho, Er, Tm, Yb.Used laser crystal R
xLu
1-xVO
4Logical light face size be less than or equal to 10mm * 10mm.
Directly plate the deielectric-coating that helps end pumping, laser resonance and laser output in the nd-doped lutetium vanadate both ends of the surface, utilize semiconductor or other types laser end pumping output Solid State Laser.
An end face at nd-doped lutetium vanadate plates the deielectric-coating that helps end pumping, laser resonance, and the deielectric-coating that another side helps laser output is plated on the mirror of chamber, again with the nd-doped lutetium vanadate microplate and chamber mirror formation Laser Devices of a plated film.
An end face of nd-doped lutetium vanadate microplate is pasted with an end face of the nonlinear optical crystal that is used as frequency multiplication, again another end face of nd-doped lutetium vanadate microplate and another end face of nonlinear optical crystal are plated the deielectric-coating that helps end pumping, laser resonance, intracavity frequency doubling and double-frequency laser output, utilize double-frequency laser in semiconductor or the other types laser end pumping output cavity.Also deielectric-coating wherein can be plated on the mirror of chamber, again the microplate of a plated film and the adherend and the chamber mirror of nonlinear optical crystal be constituted intracavity frequency doubling laser spare; Perhaps microplate and nonlinear optical crystal are not pasted, can be realized same purpose.
An end face of nd-doped lutetium vanadate microplate is pasted with an end face transferring the Q sheet, again another end face of nd-doped lutetium vanadate microplate and another end face of accent Q sheet are plated the deielectric-coating that helps end pumping, laser resonance and pulse laser output, utilize semiconductor or other types laser end pumping output passive Q regulation pulse laser.Also deielectric-coating wherein can be plated on the mirror of chamber, again the microplate of a plated film and passive Q-adjusted adherend and chamber mirror be constituted passive Q-adjusted micro-chip laser device; Perhaps, can realize same purpose not with microplate and passive Q-adjusted stickup.
An end face of nd-doped lutetium vanadate microplate is pasted with an end face transferring the Q sheet, to transfer the other end of Q sheet to paste again with an end face of the nonlinear optical crystal that is used as frequency multiplication, another end face of nd-doped lutetium vanadate microplate and another end face of nonlinear optical crystal plate the deielectric-coating that helps end pumping, laser resonance, intracavity frequency doubling and the output of double frequency pulse laser, utilize semiconductor or other types laser end pumping to export passive Q-adjusted intracavity frequency doubling pulse laser.Also deielectric-coating wherein can be plated on the mirror of chamber, again with the microplate of a plated film, transfer the adherend and the chamber mirror of Q sheet and nonlinear optical crystal to constitute passive Q-adjusted intracavity frequency doubling laser spare.Not with microplate and passive Q-adjusted stickup, can realize same purpose in the above-mentioned device; Passive Q-adjusted is not pasted with nonlinear optical crystal in the perhaps above-mentioned device, can realize same purpose; Neither with microplate and passive Q-adjusted stickup, passive Q-adjusted is not pasted with nonlinear optical crystal again in the perhaps above-mentioned device, can realize same purpose.
Adopt the nd-doped lutetium vanadate microplate of suitable activated ion concentration and logical optical thickness, make the pumping laser of end pumping still have the part light intensity through behind the nd-doped lutetium vanadate microplate, this light intensity and chamber interior resonance laser carry out in nonlinear optical crystal and effect frequently; Earlier an end face of nd-doped lutetium vanadate microplate is pasted with an end face that is used as with nonlinear optical crystal frequently, again another end face of another end face of nd-doped lutetium vanadate microplate and nonlinear optical crystal is plated help in end pumping, laser resonance, the chamber and frequently and and the deielectric-coating of frequency laser output, utilize in semiconductor or the other types laser end pumping output cavity and frequency laser.Also deielectric-coating wherein can be plated on the mirror of chamber, constitute in the chamber microplate of a plated film and the adherend and the chamber mirror of nonlinear optical crystal and the frequency laser device again; Perhaps microplate and nonlinear optical crystal are not pasted, can be realized same purpose.
Microchip laser crystal optical direction thickness is less than or equal to 6mm, and concrete size is decided according to the type and the concentration of mixing active ions.Pump mode adopts end pumping, the direction of propagation that is pump light is consistent with the direction of propagation of resonant laser light, good laser, the thermal property of this design and nd-doped lutetium vanadate combines, made device is being kept on miniaturization, high bundle matter, the high efficiency traditional advantage basis, possessed big, the stable new feature of power output again, remedy the deficiency of existing end pumping micro-chip laser device, improved performance greatly.
Below be the Nd:LuVO of 1at.% with the doping content
4Crystal is an example, and the effect of the made micro-chip laser device of the present invention is described.Select Nd:LuVO
4The logical light face of crystal is of a size of 3mm * 3mm, optical direction thickness is 1.5mm, an end face at crystal plates 808nm anti-reflection film (T＞90%) and 1065nm high-reflecting film (R＞99.8%), another end face at crystal plates 1065nm partial reflection film (T=1%), promptly constitutes the Nd:LuVO of end pumping
4Crystal micro-chip laser device.Utilize semiconductor laser end pumping this micro-chip laser device exportable 1065nm Solid State Laser of output wavelength for 808nm, specific performance is as shown in table 1.For ease of comparing, the performance of the similar micro-chip laser device that we are made with discloseder main matrix materials is listed in the lump.
The output performance of table 1 1.06 μ m micro-chip laser devices
| Laser crystal | Size (mm 3) | Pumping threshold (W) | Maximum power output (W) | Light-light conversion efficiency (%) | Oblique efficient (%) |
| Nd:YAG | 12×12×2 | ～8 | 9.8 | 25.5％ | 32.5％ |
| Nd:GdVO 4 | 5×5×2.5 | 2.6 | 5 | 18.5％ | 22％ |
| YVO 4-Nd:YVO 4 | 1.5×10.8×11 | 2.5 | 9.3 | 26.6％ | ～31％ |
| Nd:LaB 3O 6 | Thickness 1.2 | 0.18 | 0.395 | 42.0％ | 52％ |
| Nd:LuVO 4 | 3×3×1.5 | 0.12 | 9.1 | 44.4％ | 44.65％ |
For the listed Nd:YAG quartz crystal device of table 1, because employing is so that profile pump mode crystalline size is bigger, the characteristics that its emission cross section is little cause the pumping threshold height, conversion efficiency and oblique efficient are all lower, and because the narrow temperature that when improving pump power, must constantly adjust laser diode that causes of this crystal absorption band, can aim at the center absorbing wavelength of Nd:YAG crystal all the time to guarantee pumping wavelength, thereby guarantee power output and the unlikely decline of efficient, but increased the complexity of adjusting thus, and if things go on like this will influence the life-span of pump laser.For Nd:GdVO
4Quartz crystal device in order to reduce a heat year use chopper pump light is modulated, but the utilance of pump power reduces greatly thus, only is 18.5%.For YVO
4-Nd:YVO
4The mixed crystal device reduces the thermic optical differences though added non-doped crystal, and light-light conversion efficiency is still not high, is 26.6%.For Nd:LaB
3O
6Quartz crystal device, its maximum power output only is 0.395W, though the use of pumping of 871nm titanium precious stone laser and chopper greatly reduces thermal effect, the optical conversion efficiencies of laser output and oblique efficient significantly improve, and have increased the size and sophistication of package unit simultaneously.Compare Nd:LuVO involved in the present invention with above-mentioned several micro-chip laser devices
4Crystal micro-chip laser device can be with the most commercial laser diode at present as pumping source, need not use chopper etc. to fall hot measure, need not adjust laser diode temperature with to quasicrystal absworption peak (Nd:LuVO
4The absorption bandwidth of crystal is 8nm), thereby cost is low, device is simple, and it is convenient to adjust, and the good stability of laser output is convenient to extensive, mass production.In addition, by the listed data of table one as can be known, compare Nd:LuVO with other device
4The micro-chip laser device size is little, pumping threshold is low, power output is big, light-light conversion efficiency height, oblique efficient height, thereby has competitiveness.
The end pumping micro-chip laser device that the nd-doped lutetium vanadate of other active ions is made is mixed in employing, and nd-doped lutetium vanadate and frequency conversion, pulse micro-chip laser device that nonlinear optics, accent Q components and parts constitute, has above-mentioned various advantage equally.
(4) embodiment
Example 1:
808nm semiconductor laser pumping Nd
3+The LuVO that activates
4Crystal micro-chip is realized the output of 1065nm laser.
Nd
3+The LuVO that activates
4Crystal has the absworption peak of the last one near 808nm, absorption cross-section is 69 * 10
-20Cm
2, the absworption peak bandwidth reaches 8nm, at the 1065nm place one emission peak is arranged, and stimulated emission cross section is 146 * 10
-20Cm
2, bandwidth 1.2nm.Directly at Nd
3+The LuVO that activates
4The both ends of the surface of crystal micro-chip plate deielectric-coating, and feasible incident end face near pump light source is saturating at 808nm place height, the 1065nm place is anti-high, and the outgoing end face is anti-high at the 808nm place, and the transmitance at 1065nm place (is determined according to pumping light power) between 0.3% to 30%.Microplate behind the plated film be a 808nm semiconductor laser perpendicular to the incident end face pumping, the 1065nm Solid State Laser is perpendicular to the micro-chip laser device of outgoing end face output.
Example 2:
808nm semiconductor laser pumping Nd
3+The LuVO that activates
4Crystal micro-chip is realized the output of 1065nm laser.
At Nd
3+An end face of the nd-doped lutetium vanadate that activates plates high saturating, the high anti-deielectric-coating in 1065nm place in 808nm place, and another side is high anti-at the 808nm place, 1065nm place part is plated on the mirror of chamber through the deielectric-coating of (transmitance T=0.3%～30%), again with the Nd of a plated film
3+Nd-doped lutetium vanadate microplate that activates and chamber mirror constitute Laser Devices, and this is a 808nm semiconductor laser end pumping, the micro-chip laser device of 1065nm Solid State Laser output.The two sides deielectric-coating of this device is plated in respectively on laser crystal and the chamber mirror, and the two sides deielectric-coating of embodiment 1 described device all is plated on the laser crystal, and this is their main difference.
Example 3:
808nm semiconductor laser pumping Nd
3+The LuVO that activates
4Crystal micro-chip is realized the output of intracavity frequency doubling 532.5nm green laser.
Directly with Nd
3+The LuVO that activates
4Crystal micro-chip sticks on the end face of nonlinear optical crystal (as KTP, LBO, β-BBO, BiBO etc.) of frequency multiplication 1065nm, other end at microplate, promptly the end face near pump light plates high saturating, the high anti-deielectric-coating in 1065nm place at the 808nm place, plates high anti-, the high saturating deielectric-coating in 532.5nm place at 808nm and 1065nm place in the other end of nonlinear optical crystal.This be a 808nm semiconductor laser perpendicular to the incident end face pumping, 532.5nm green solid laser vertical is in the intracavity frequency doubling micro-chip laser device spare of nonlinear optical crystal outgoing end face output.Also high anti-, the high saturating deielectric-coating in 532.5nm place in 808nm and 1065nm place can be plated on the mirror of chamber, will simultaneously plate microplate and the adherend of nonlinear optical crystal and the intracavity frequency doubling micro-chip laser device spare that chamber mirror formation 532.5nm exports of high saturating, the high inverse medium film in 1065nm place in 808nm place again; Perhaps microplate and nonlinear optical crystal are not pasted, can be realized same purpose.
Example 4:
808nm semiconductor laser pumping Nd
3+The LuVO that activates
4Crystal micro-chip is realized the output of 1065nm passive Q regulation pulse laser.
Directly with Nd
3+The LuVO that activates
4Crystal micro-chip and passive Q-adjusted are (as Cr
4+: YAG, GaAs) paste, other end at microplate, promptly the end face near pump light plates high saturating, the high anti-deielectric-coating in 1065nm place at the 808nm place, plates the deielectric-coating that high transmitance anti-, the 1065nm place (is determined according to pumping light power) between 0.3% to 30% at the 808nm place passive Q-adjusted other end.This be a 808nm semiconductor laser perpendicular to the incident end face pumping, the 1065nm adjusting Q pulse laser is perpendicular to the passive Q-adjusted micro-chip laser device of passive Q-adjusted outgoing end face output.Also can be plated on the mirror of chamber by the deielectric-coating 808nm place is high anti-, that 1065nm place part sees through, will simultaneously plate the microplate of high saturating, the high inverse medium film in 1065nm place in 808nm place and passive Q-adjusted adherend and the passive Q-adjusted micro-chip laser device that chamber mirror formation 1065nm exports again; Perhaps, can realize same purpose not with microplate and passive Q-adjusted stickup.
Example 5:
808nm semiconductor laser pumping Nd
3+The LuVO that activates
4Crystal micro-chip is realized passive Q-adjusted intracavity frequency doubling 532.5nm green pulse laser output.
Directly with Nd
3+The LuVO that activates
4Crystal micro-chip and passive Q-adjusted are (as Cr
4+: YAG, GaAs) paste, again passive Q-adjusted other end and the nonlinear optical crystal of frequency multiplication 1065nm (as KTP, LBO, β-BBO, BiBO etc.) are pasted, other end at microplate, promptly the end face near pump light plates high saturating, the high anti-deielectric-coating in 1065nm place at the 808nm place, plates high anti-, the high saturating deielectric-coating in 532.5nm place at 808nm and 1065nm place in the other end of non-linear laser crystal.This be a 808nm semiconductor laser perpendicular to the incident end face pumping, pulse 532.5nm green solid laser vertical is in the passive Q-adjusted intracavity frequency doubling micro-chip laser device spare of nonlinear optical crystal outgoing end face output.Also high anti-, the high saturating deielectric-coating in 532.5nm place in 808nm and 1065nm place can be plated on the mirror of chamber, will simultaneously plate the passive Q-adjusted intracavity frequency doubling micro-chip laser device spare that high saturating, the microplate of the high inverse medium film in 1065nm place in 808nm place, the adherend of transferring Q sheet and nonlinear optical crystal and chamber mirror formation 532.5nm pulse laser are exported again.Not with microplate and passive Q-adjusted stickup, can realize same purpose in the above-mentioned device; Passive Q-adjusted is not pasted with nonlinear optical crystal in the perhaps above-mentioned device, can realize same purpose; Neither with microplate and passive Q-adjusted stickup, passive Q-adjusted is not pasted with nonlinear optical crystal again in the perhaps above-mentioned device, can realize same purpose.
Example 6:
808nm semiconductor laser pumping Nd
3+The LuVO that activates
4Crystal micro-chip is realized in the chamber and 459nm blue laser output frequently.
By control Nd
3+Ion concentration and microplate thickness make the semiconductor pumped laser of 808nm of end pumping still have part residue light intensity after seeing through microplate, utilize nonlinear optical crystal should remain light intensity and microchip laser and frequency again and export the 459nm blue laser.Directly with Nd
3+The LuVO that activates
4Crystal micro-chip sticks on and frequently on the end face of the nonlinear optical crystal (as LBO, β-BBO, BiBO, KTP etc.) of 1065nm and 808nm, other end at microplate, promptly the end face near pump light plates high saturating, the high anti-deielectric-coating in 1065nm place at the 808nm place, plates high anti-, the high saturating deielectric-coating in 459nm place at 808nm and 1065nm place in the other end of nonlinear optical crystal.This be a 808nm semiconductor laser perpendicular to the incident end face pumping, 459nm blue solid laser vertical is micro-chip laser device in the chamber of nonlinear optical crystal outgoing end face output and frequently.Also high anti-, the high saturating deielectric-coating in 459nm place in 808nm and 1065nm place can be plated on the mirror of chamber, in the chamber that the adherend that will simultaneously plate the microplate of high saturating, the high inverse medium film in 1065nm place in 808nm place and nonlinear optical crystal again and chamber mirror formation 459nm blue laser are exported and the frequency micro-chip laser device; Perhaps microplate and nonlinear optical crystal are not pasted, can be realized same purpose.
Claims (9)
1. nd-doped lutetium vanadate micro-chip laser device of mixing active ions, it is characterized in that, make the end pumping micro-chip laser device with the nd-doped lutetium vanadate of mixing active ions as laser medium, and can constitute frequency conversion, pulse laser device with nonlinear optics, accent Q components and parts.
2. the nd-doped lutetium vanadate micro-chip laser device of mixing active ions according to claim 1 is characterized in that described laser medium is R
xLu
1-xVO
4Crystal, 0＜x≤1 wherein, R
3+Active ions determine that according to pumping source, laser cavity and application need it is partially or completely to substitute Lu in the crystal substrate
3+Certain rare earth ion of ion position can be R=Nd, Ho, Er, Tm, Yb.
3. the nd-doped lutetium vanadate micro-chip laser device of mixing active ions according to claim 1, it is characterized in that, directly plate the deielectric-coating that helps end pumping, laser resonance and laser output in the nd-doped lutetium vanadate both ends of the surface, utilize semiconductor or other types laser end pumping output Solid State Laser.
4. the nd-doped lutetium vanadate micro-chip laser device of mixing active ions according to claim 1, it is characterized in that, an end face at nd-doped lutetium vanadate plates the deielectric-coating that helps end pumping, laser resonance, and the deielectric-coating that another side helps laser output is plated on the mirror of chamber, again with the nd-doped lutetium vanadate microplate and chamber mirror formation Laser Devices of a plated film.
5. the nd-doped lutetium vanadate micro-chip laser device of mixing active ions according to claim 1, it is characterized in that, an end face of nd-doped lutetium vanadate microplate is pasted with an end face of the nonlinear optical crystal that is used as frequency multiplication, again another end face of nd-doped lutetium vanadate microplate and another end face of nonlinear optical crystal are plated the deielectric-coating that helps end pumping, laser resonance, intracavity frequency doubling and double-frequency laser output, utilize double-frequency laser in semiconductor or the other types laser end pumping output cavity.
6. the nd-doped lutetium vanadate micro-chip laser device of mixing active ions according to claim 1, it is characterized in that, an end face of nd-doped lutetium vanadate microplate is pasted with an end face transferring the Q sheet, again another end face of nd-doped lutetium vanadate microplate and another end face of accent Q sheet are plated the deielectric-coating that helps end pumping, laser resonance and pulse laser output, utilize semiconductor or other types laser end pumping output passive Q regulation pulse laser.
7. the nd-doped lutetium vanadate micro-chip laser device of mixing active ions according to claim 1, it is characterized in that, an end face of nd-doped lutetium vanadate microplate is pasted with an end face transferring the Q sheet, to transfer the other end of Q sheet to paste again with an end face of the nonlinear optical crystal that is used as frequency multiplication, another end face of nd-doped lutetium vanadate microplate and another end face of nonlinear optical crystal plate and help end pumping, laser resonance, the deielectric-coating of intracavity frequency doubling and the output of double frequency pulse laser utilizes semiconductor or other types laser end pumping to export passive Q-adjusted intracavity frequency doubling pulse laser.
8. the nd-doped lutetium vanadate micro-chip laser device of mixing active ions according to claim 1, it is characterized in that, adopt the nd-doped lutetium vanadate microplate of suitable activated ion concentration and logical optical thickness, make the pumping laser of end pumping still have the part light intensity through behind the nd-doped lutetium vanadate microplate, this light intensity and chamber interior resonance laser carry out in nonlinear optical crystal and effect frequently; Earlier an end face of nd-doped lutetium vanadate microplate is pasted with an end face that is used as with nonlinear optical crystal frequently, again another end face of another end face of nd-doped lutetium vanadate microplate and nonlinear optical crystal is plated help in end pumping, laser resonance, the chamber and frequently and and the deielectric-coating of frequency laser output, utilize in semiconductor or the other types laser end pumping output cavity and frequency laser.
9. according to claim 5 or 6 or the 7 or 8 described nd-doped lutetium vanadate micro-chip laser devices of mixing active ions, it is characterized in that, wherein a deielectric-coating is plated on the mirror of chamber, again the nd-doped lutetium vanadate microplate of a plated film and the adherend and the chamber mirror of other optical elements is constituted Laser Devices.
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|---|---|---|---|
| CN 200610043591 CN1832276A (en) | 2006-04-14 | 2006-04-14 | Barium acid lutetium crystal micro-chip laser device of mixing with active ions |
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|---|---|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101499613B (en) * | 2008-01-31 | 2012-02-22 | 中国科学院福建物质结构研究所 | Self-frequency-sum erbium solid laser device |
| CN110216383A (en) * | 2019-03-27 | 2019-09-10 | 上海大学 | A method of spherical concave mirror is prepared in optical waveguide based on laser cold working |
-
2006
- 2006-04-14 CN CN 200610043591 patent/CN1832276A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101499613B (en) * | 2008-01-31 | 2012-02-22 | 中国科学院福建物质结构研究所 | Self-frequency-sum erbium solid laser device |
| CN110216383A (en) * | 2019-03-27 | 2019-09-10 | 上海大学 | A method of spherical concave mirror is prepared in optical waveguide based on laser cold working |
| CN110216383B (en) * | 2019-03-27 | 2021-08-10 | 上海大学 | Method for preparing spherical concave mirror on optical waveguide based on laser cold machining |
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