CN105063755B - The mesosilicate crystal of activated by erbium ions and its 1.55 micron waveband Solid Laser Elements - Google Patents

The mesosilicate crystal of activated by erbium ions and its 1.55 micron waveband Solid Laser Elements Download PDF

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CN105063755B
CN105063755B CN201510558034.7A CN201510558034A CN105063755B CN 105063755 B CN105063755 B CN 105063755B CN 201510558034 A CN201510558034 A CN 201510558034A CN 105063755 B CN105063755 B CN 105063755B
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王晗
黄艺东
陈雨金
黄建华
龚兴红
林炎富
罗遵度
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Fujian Institute of Research on the Structure of Matter of CAS
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Abstract

The mesosilicate crystal of activated by erbium ions and its 1.55 micron waveband Solid Laser Elements, are related to laser crystal and devices field.The molecular formula of the crystalloid is:(ErxYbyRe(1‑x‑y))2Si2O7Or (ErxYb1‑x)2Si2O7, wherein x=0.002 0.02, y=0.05 0.5, the combination of a certain element or some elements in Re Y, Gd, Lu element.Using this crystalloid as gain media, using the semiconductor laser pumping of wave band near 976nm, high performance 1.55 mu m waveband Solid State Laser output can be achieved.

Description

铒离子激活的焦硅酸盐晶体及其1.55微米波段固体激光器件Erbium ion activated pyrosilicate crystal and its 1.55 micron band solid-state laser device

技术领域technical field

本发明涉及激光晶体和器件领域。The invention relates to the field of laser crystals and devices.

背景技术Background technique

利用铒离子4I13/24I15/2跃迁获得的1.55μm波段激光处于光纤通信和大气传输窗口,且对人眼安全,可被广泛应用于国防和民用领域。获得该波段激光的一种技术途径是采用对976nm附近波长半导体激光具有较大吸收截面的Yb3+作为敏化离子,通过能量传递使Er3+布居到4I11/2能级上,然后通过4I11/24I13/2的无辐射弛豫,使激光上能级4I13/2得到有效布居,最后通过4I13/24I15/2跃迁实现1.55μm波段的激光输出。The 1.55μm band laser obtained by using the erbium ion 4 I 13/24 I 15/2 transition is in the window of optical fiber communication and atmospheric transmission, and is safe for human eyes, and can be widely used in national defense and civilian fields. A technical approach to obtain lasers in this band is to use Yb 3+ which has a large absorption cross section for semiconductor lasers near 976nm as sensitized ions, and make Er 3+ settle on the 4 I 11/2 energy level through energy transfer. Then through the non - radiative relaxation of 4 I 11/2 4 I 13/2 , the upper energy level 4 I 13/2 of the laser is effectively populated , and finally the 1.55 Laser output in the μm band.

焦硅酸盐晶体物化性质稳定、硬度高、热性能好。铒离子在此类晶体中有较短的4I11/2能级荧光寿命(约9μs),因此泵浦能级上的大部分粒子能够通过快速的无辐射弛豫布居到激光上能级,实现1.55μm波段激光的高效运转。同时,较长的4I13/2能级荧光寿命(约9ms)也有利于Er3+激光上能级的储能,减少由无辐射弛豫引起的晶体产热,降低激光晶体的热效应。Pyrosilicate crystal has stable physical and chemical properties, high hardness and good thermal performance. Erbium ions have a short 4 I 11/2 energy level fluorescence lifetime (about 9 μs) in this type of crystal, so most of the particles on the pump energy level can settle to the upper laser energy level through fast non-radiative relaxation , to achieve efficient operation of the 1.55μm band laser. At the same time, the longer 4 I 13/2 energy level fluorescence lifetime (about 9ms) is also beneficial to the energy storage of the upper energy level of the Er 3+ laser, reducing the heat generation of the crystal caused by non-radiative relaxation, and reducing the thermal effect of the laser crystal.

发明内容Contents of the invention

本发明的目的在于提供一类铒离子激活的焦硅酸盐激光晶体,并采用此类晶体作为增益介质,获得高效和高平均输出功率的1.55μm波段固体激光。The purpose of the present invention is to provide a kind of pyrosilicate laser crystal activated by erbium ions, and use this kind of crystal as a gain medium to obtain a 1.55 μm band solid laser with high efficiency and high average output power.

本发明包括如下技术方案:The present invention includes following technical solutions:

1.一类铒离子激活的焦硅酸盐激光晶体。该类晶体的分子式为:(ErxYbyRe(1-x-y))2Si2O7或(ErxYb1-x)2Si2O7,其中x=0.002-0.02,y=0.05-0.5,Re为Y、Gd、Lu元素中某一元素或若干元素的组合。1. A class of pyrosilicate laser crystals activated by erbium ions. The molecular formula of this kind of crystal is: (Er x Yb y Re (1-xy) ) 2 Si 2 O 7 or (Er x Yb 1-x ) 2 Si 2 O 7 , where x=0.002-0.02, y=0.05- 0.5, Re is a certain element or a combination of several elements among Y, Gd, and Lu elements.

2.一种1.55μm波段固体激光器,由半导体激光泵浦系统、激光谐振腔和增益介质组成,其特征在于:采用如项1所述的晶体作为该激光器的增益介质;半导体激光泵浦系统包括976nm附近波长半导体激光以及放置在半导体激光和增益介质之间的光学耦合器;激光谐振腔由输入和输出镜组成;输入镜设计为在976nm附近波长透过率T≥70%,在1.55μm波段处透过率T≤1%;输出镜设计为在1.55μm波段处透过率0.5%≤T≤10%。2. A 1.55 μm band solid-state laser is made up of a semiconductor laser pumping system, a laser resonator and a gain medium, and is characterized in that: the crystal as described in item 1 is used as the gain medium of the laser; the semiconductor laser pumping system includes Semiconductor laser with a wavelength near 976nm and an optical coupler placed between the semiconductor laser and the gain medium; the laser resonator is composed of input and output mirrors; the input mirror is designed to have a wavelength transmittance T≥70% near 976nm, and in the 1.55μm band Transmittance T≤1%; the output mirror is designed to have a transmittance of 0.5%≤T≤10% in the 1.55μm band.

3.如项2所述的固体激光器,其特征在于:将输入和输出镜分别直接镀在所述的增益介质的一个或两个相对端面上。3. The solid-state laser as described in Item 2, characterized in that: the input and output mirrors are respectively directly plated on one or two opposite end faces of the gain medium.

4.一种1.55μm波段固体脉冲激光器,其特征在于:在项2所述的激光器的增益介质和输出镜之间插入1.55μm波段的调Q或锁模元件;也可将调Q和锁模元件同时置于激光谐振腔中。4. A 1.55 μm band solid-state pulsed laser, characterized in that: a Q-switching or mode-locking element of the 1.55 μm band is inserted between the gain medium and the output mirror of the laser described in item 2; The components are simultaneously placed in the laser cavity.

5.如项4所述的固体激光器,其特征在于:将输入镜直接镀在所述的增益介质的输入端面上;也可将输出镜直接镀在所述的调Q或锁模元件的输出端面上。5. The solid-state laser as described in item 4 is characterized in that: the input mirror is directly plated on the input end face of the gain medium; the output mirror can also be directly plated on the output of the described Q-switching or mode-locking element end face.

6.一种1.55μm波段可调谐固体激光器,其特征在于:在项2所述的激光器的增益介质和输出镜之间插入1.55μm波段的波长调谐元件。6. A tunable solid-state laser in the 1.55 μm band, characterized in that: a wavelength tuning element in the 1.55 μm band is inserted between the gain medium and the output mirror of the laser described in item 2.

7.一种1.55μm波段倍频激光器,其特征在于:在项2所述的激光器的增益介质和输出镜之间插入1.55μm波段的倍频晶体,激光谐振腔输出镜设计为在1.55μm波段处透过率小于0.5%,在倍频波段处透过率大于80%;也可将输出镜直接镀在所述的倍频晶体的输出端面上。7. A 1.55 μm band frequency doubling laser, characterized in that: a frequency doubling crystal of the 1.55 μm band is inserted between the gain medium and the output mirror of the laser described in item 2, and the laser resonator output mirror is designed to be in the 1.55 μm band The transmittance at the frequency doubling band is less than 0.5%, and the transmittance at the frequency doubling band is greater than 80%. The output mirror can also be directly plated on the output end surface of the frequency doubling crystal.

实施本发明技术方案具有的有益效果是:以(ErxYbyRe(1-x-y))2Si2O7或(ErxYb1-x)2Si2O7晶体为增益介质,能获得高输出功率和高效率的连续以及高脉冲能量、高重复频率和窄脉宽的调Q脉冲1.55μm波段固体激光。The beneficial effects of implementing the technical solution of the present invention are: using (Er x Yb y Re (1-xy) ) 2 Si 2 O 7 or (Er x Yb 1-x ) 2 Si 2 O 7 crystals as the gain medium, can obtain High output power and high efficiency CW and high pulse energy, high repetition frequency and narrow pulse width Q-switched pulse 1.55μm band solid-state laser.

具体实施方式detailed description

实例1:976nm半导体激光端面泵浦Er:Yb:Lu2Si2O7晶体实现1.53μm固体激光输出。Example 1: 976nm semiconductor laser end-pumped Er:Yb:Lu 2 Si 2 O 7 crystal to achieve 1.53μm solid-state laser output.

利用提拉法生长(Er0.0025Yb0.1Lu0.8975)2Si2O7激光晶体。该晶体属于单斜晶系,有三个光学主轴,分别为X、Y、Z。利用偏光显微镜定向后,取XY切片,由于在泵浦光976nm处的吸收系数约为15cm-1,按照80%的吸收率切割厚度为1mm(端面积一般为平方毫米到平方厘米)的该晶体样品,端面抛光后固定在中间有通光孔的铜座上并置于激光腔中。激光腔输入镜在976nm波长处透过率T=90%,在1.53μm波长处透过率T=0.1%;激光腔输出镜在1.53μm波长处透过率T=3.5%。利用10W的976nm半导体激光端面泵浦即可得到连续功率高于1.5W的1.53μm固体激光输出。也可以将激光腔输入和输出镜分别直接镀在该激光晶体的两个端面上,以实现同样的目的。(Er 0.0025 Yb 0.1 Lu 0.8975 ) 2 Si 2 O 7 laser crystals were grown by pulling method. The crystal belongs to the monoclinic crystal system and has three optical axes, which are X, Y, and Z respectively. After orientation with a polarizing microscope, take an XY slice, and cut the crystal with a thickness of 1 mm (end area is generally square millimeters to square centimeters) according to the absorption rate of 80% because the absorption coefficient at 976 nm of the pump light is about 15 cm -1 The sample is fixed on a copper seat with a light hole in the middle after the end face is polished and placed in the laser cavity. The transmittance of the input mirror of the laser cavity is T=90% at the wavelength of 976nm, and the transmittance of T=0.1% at the wavelength of 1.53 μm; the transmittance of the output mirror of the laser cavity is T=3.5% at the wavelength of 1.53 μm. A 1.53μm solid-state laser output with a continuous power higher than 1.5W can be obtained by using a 10W 976nm semiconductor laser end-pump. The input and output mirrors of the laser cavity can also be directly plated on the two end faces of the laser crystal respectively to achieve the same purpose.

实例2:976nm半导体激光端面泵浦Er:Yb:Lu2Si2O7晶体实现1.53μm固体脉冲激光输出。Example 2: 976nm semiconductor laser end-pumped Er:Yb:Lu 2 Si 2 O 7 crystal to achieve 1.53μm solid-state pulsed laser output.

直接将1.53μm波段的被动调Q片(如Co2+:MgAl2O4,Co2+:ZnSe,Cr2+:ZnSe等)或声光调Q模块插入实例1中激光晶体和输出镜之间,即可实现1.53μm调Q脉冲激光运转。也可以将输出镜直接镀在被动调Q片或声光调Q模块的输出端面上,以实现同样的目的。Directly insert a passive Q-switching chip (such as Co 2+ : MgAl 2 O 4 , Co 2+ : ZnSe, Cr 2+ : ZnSe, etc.) or an acousto-optic Q-switching module in the 1.53 μm band between the laser crystal and the output mirror in Example 1. 1.53μm Q-switched pulsed laser operation can be realized. The output mirror can also be directly plated on the output end surface of the passive Q-switching chip or the acousto-optic Q-switching module to achieve the same purpose.

实例3:976nm半导体激光端面泵浦Er:Yb:Lu2Si2O7晶体实现1520-1570nm可调谐固体激光输出。Example 3: 976nm semiconductor laser end-pumped Er:Yb:Lu 2 Si 2 O 7 crystal to realize 1520-1570nm tunable solid-state laser output.

将实例1中激光晶体样品固定在中间有通光孔的铜座上并置于激光腔中。激光腔输入镜在976nm波长处透过率T=90%,在1.5-1.6μm透过率T=0.1%;激光腔输出镜在1.5-1.6μm透过率T=1%。将1.55μm波段的波长调谐元件(双折射滤光片、光栅或棱镜等)插入激光晶体和激光腔输出镜之间,利用976nm半导体激光端面泵浦即可实现1520-1570nm可调谐激光输出。The laser crystal sample in Example 1 was fixed on a copper seat with a light hole in the middle and placed in the laser cavity. The transmittance of the input mirror of the laser cavity is T=90% at the wavelength of 976nm, and the transmittance of T=0.1% at the wavelength of 1.5-1.6 μm; the transmittance of the output mirror of the laser cavity is T=1% at the wavelength of 1.5-1.6 μm. Insert the wavelength tuning element (birefringence filter, grating or prism, etc.) in the 1.55μm band between the laser crystal and the laser cavity output mirror, and use the 976nm semiconductor laser end pump to achieve 1520-1570nm tunable laser output.

实例4:976nm半导体激光端面泵浦Er:Yb:Lu2Si2O7晶体实现810nm倍频固体激光输出。Example 4: 976nm semiconductor laser end-pumped Er:Yb:Lu 2 Si 2 O 7 crystal to achieve 810nm frequency-doubled solid-state laser output.

直接将倍频1620nm波段的非线性光学晶体(如KTP、LBO、β-BBO等)插入实例1中激光晶体和输出镜之间。在激光腔输入镜镀上976nm波长处透过率T=90%,在1620和810nm波长处高反(T≤0.5%)的介质膜;在输出镜上镀上1620nm波长处高反(T≤0.5%),倍频波长810nm处高透(T≥80%)的介质膜。利用976nm半导体激光泵浦,即可实现810nm倍频激光输出。也可以将输出镜直接镀在非线性光学晶体的输出端面上,以实现同样的目的。Directly insert the nonlinear optical crystal (such as KTP, LBO, β-BBO, etc.) of the frequency doubling 1620nm band between the laser crystal and the output mirror in Example 1. Coat the input mirror of the laser cavity with a dielectric film with transmittance T=90% at 976nm wavelength and high reflection (T≤0.5%) at 1620 and 810nm wavelength; coat the output mirror with high reflection at 1620nm wavelength (T≤0.5%) 0.5%), a high-transmittance (T≥80%) dielectric film at a frequency doubled wavelength of 810nm. With 976nm semiconductor laser pumping, 810nm frequency doubled laser output can be realized. The output mirror can also be directly plated on the output end surface of the nonlinear optical crystal to achieve the same purpose.

实例5:976nm半导体激光端面泵浦Er:Yb:Gd2Si2O7晶体实现1.56μm固体激光输出。Example 5: 976nm semiconductor laser end-pumped Er:Yb:Gd 2 Si 2 O 7 crystal to achieve 1.56μm solid-state laser output.

利用提拉法生长(Er0.008Yb0.25Gd0.742)2Si2O7激光晶体。该晶体属于单斜晶系,有三个光学主轴,分别为X、Y、Z。利用偏光显微镜定向后,取XZ切片,由于在泵浦光976nm处的吸收系数约为40cm-1,按照80%的吸收率切割厚度为400μm(端面积一般为平方毫米到平方厘米)的该晶体样品,端面抛光后固定在中间有通光孔的铜座上并置于激光腔中。激光腔输入镜在976nm波长处透过率T=90%,在1.56μm波长处透过率T=0.1%;激光腔输出镜在1.56μm波长处透过率T=2.0%。利用10W的976nm半导体激光端面泵浦即可得到连续功率高于1.2W的1.56μm固体激光输出。也可以将激光腔输入和输出镜分别直接镀在该激光晶体的两个端面上,以实现同样的目的。(Er 0.008 Yb 0.25 Gd 0.742 ) 2 Si 2 O 7 laser crystals were grown by pulling method. The crystal belongs to the monoclinic crystal system and has three optical axes, which are X, Y, and Z respectively. After orientation with a polarizing microscope, take an XZ section, and cut the crystal with a thickness of 400 μm (end area is generally square millimeters to square centimeters) according to the absorption rate of 80% because the absorption coefficient at 976 nm of the pump light is about 40 cm -1 The sample is fixed on a copper seat with a light hole in the middle after the end face is polished and placed in the laser cavity. The transmittance of the input mirror of the laser cavity is T=90% at the wavelength of 976 nm, and the transmittance of T=0.1% at the wavelength of 1.56 μm; the transmittance of the output mirror of the laser cavity is T=2.0% at the wavelength of 1.56 μm. A 1.56μm solid-state laser output with a continuous power higher than 1.2W can be obtained by using a 10W 976nm semiconductor laser end pump. The input and output mirrors of the laser cavity can also be directly plated on the two end faces of the laser crystal respectively to achieve the same purpose.

实例6:976nm半导体激光端面泵浦Er:Yb:Y2Si2O7晶体实现1.6μm固体激光输出。Example 6: 976nm semiconductor laser end-pumped Er:Yb:Y 2 Si 2 O 7 crystal to achieve 1.6μm solid-state laser output.

利用提拉法生长(Er0.01Yb0.4Y0.59)2Si2O7激光晶体。该晶体属于单斜晶系,有三个光学主轴,分别为X、Y、Z。利用偏光显微镜定向后,取XY切片,由于在泵浦光976nm处的吸收系数约为60cm-1,按照80%的吸收率切割厚度为250μm(端面积一般为平方毫米到平方厘米)的该晶体样品,端面抛光后固定在中间有通光孔的铜座上并置于激光腔中。激光腔输入镜在976nm波长处透过率T=90%,在1.6μm波长处透过率T=0.1%;激光腔输出镜在1.6μm波长处透过率T=1.0%。利用10W的976nm半导体激光端面泵浦即可得到连续功率高于0.7W的1.6μm固体激光输出。也可以将激光腔输入和输出镜分别直接镀在该激光晶体的两个端面上,以实现同样的目的。(Er 0.01 Yb 0.4 Y 0.59 ) 2 Si 2 O 7 laser crystals were grown by pulling method. The crystal belongs to the monoclinic crystal system and has three optical axes, which are X, Y, and Z respectively. After orientation using a polarizing microscope, take an XY section, and since the absorption coefficient at 976 nm of the pump light is about 60 cm -1 , cut the crystal with a thickness of 250 μm (the end area is generally square millimeters to square centimeters) according to the absorption rate of 80% The sample is fixed on a copper seat with a light hole in the middle after the end face is polished and placed in the laser cavity. The transmittance of the input mirror of the laser cavity is T=90% at the wavelength of 976nm, and the transmittance of T=0.1% at the wavelength of 1.6 μm; the transmittance of the output mirror of the laser cavity is T=1.0% at the wavelength of 1.6 μm. A 1.6μm solid-state laser output with a continuous power higher than 0.7W can be obtained by using a 10W 976nm semiconductor laser end pump. The input and output mirrors of the laser cavity can also be directly plated on the two end faces of the laser crystal respectively to achieve the same purpose.

实例7:976nm半导体激光端面泵浦Er:Yb2Si2O7晶体实现1.54μm固体激光输出。Example 7: 976nm semiconductor laser end-pumped Er:Yb 2 Si 2 O 7 crystal to achieve 1.54μm solid-state laser output.

利用提拉法生长(Er0.015Yb0.985)2Si2O7激光晶体。利用偏光显微镜定向后,取XY切片,由于在泵浦光976nm处的吸收系数约为160cm-1,按照80%的吸收率切割厚度为100μm(端面积一般为平方毫米到平方厘米)的该晶体样品,端面抛光后固定在中间有通光孔的铜座上并置于激光腔中。激光腔输入镜在976nm波长处透过率T=90%,在1.54μm波长处透过率T=0.1%;激光腔输出镜在1.54μm波长处透过率T=2.5%。利用10W的976nm半导体激光端面泵浦即可得到连续功率高于1.0W的1.54μm固体激光输出。也可以将激光腔输入和输出镜分别直接镀在该激光晶体的两个端面上,以实现同样的目的。(Er 0.015 Yb 0.985 ) 2 Si 2 O 7 laser crystals were grown by pulling method. After orientation with a polarizing microscope, take an XY section, and cut the crystal with a thickness of 100 μm (end area is generally square millimeters to square centimeters) according to the absorption rate of 80% because the absorption coefficient at 976 nm of the pump light is about 160 cm -1 The sample is fixed on a copper seat with a light hole in the middle after the end face is polished and placed in the laser cavity. The transmittance of the input mirror of the laser cavity is T=90% at the wavelength of 976nm, and the transmittance of T=0.1% at the wavelength of 1.54μm; the transmittance of the output mirror of the laser cavity is T=2.5% at the wavelength of 1.54μm. A 1.54μm solid-state laser output with a continuous power higher than 1.0W can be obtained by using a 10W 976nm semiconductor laser end pump. The input and output mirrors of the laser cavity can also be directly plated on the two end faces of the laser crystal respectively to achieve the same purpose.

Claims (9)

1.一类1.55μm波段激光器用铒离子激活焦硅酸盐晶体,该类晶体的分子式为:(ErxYbyRe(1-x-y))2Si2O7,其中x=0.002-0.02,y=0.05-0.5,Re为Y、Gd、Lu元素中某一元素或若干元素的组合;或者,其分子式为:(ErxYb1-x)2Si2O7,其中x=0.002-0.015。1. A class of 1.55μm band lasers uses erbium ions to activate pyrosilicate crystals. The molecular formula of this type of crystals is: (Er x Yb y Re (1-xy) ) 2 Si 2 O 7 , where x=0.002-0.02, y=0.05-0.5, Re is an element or a combination of several elements among Y, Gd, and Lu; or, its molecular formula is: (Er x Yb 1-x ) 2 Si 2 O 7 , where x=0.002-0.015 . 2.一种1.55μm波段固体激光器,由半导体激光泵浦系统、激光谐振腔和增益介质组成,其特征在于:以一类1.55μm波段激光器用铒离子激活焦硅酸盐晶体作为该激光器的增益介质,该类晶体的分子式为:(ErxYbyRe(1-x-y))2Si2O7或(ErxYb1-x)2Si2O7,其中x=0.002-0.02,y=0.05-0.5,Re为Y、Gd、Lu元素中某一元素或若干元素的组合;半导体激光泵浦系统包括976nm附近波长半导体激光以及放置在半导体激光和增益介质之间的光学耦合器;激光谐振腔由输入和输出镜组成;输入镜设计为在976nm波长附近透过率T≥70%,在1.55μm波段处透过率T≤1%;输出镜设计为在1.55μm波段处透过率0.5%≤T≤10%。2. A 1.55 μm band solid-state laser is made up of a semiconductor laser pumping system, a laser resonator and a gain medium, and is characterized in that: a class of 1.55 μm band laser uses erbium ions to activate pyrosilicate crystals as the gain of the laser Medium, the molecular formula of this type of crystal is: (Er x Yb y Re (1-xy) ) 2 Si 2 O 7 or (Er x Yb 1-x ) 2 Si 2 O 7 , where x=0.002-0.02, y= 0.05-0.5, Re is a certain element or a combination of several elements among Y, Gd, and Lu elements; the semiconductor laser pumping system includes a semiconductor laser with a wavelength near 976nm and an optical coupler placed between the semiconductor laser and the gain medium; laser resonance The cavity is composed of input and output mirrors; the input mirror is designed to have a transmittance T≥70% near the wavelength of 976nm, and the transmittance T≤1% at the 1.55μm band; the output mirror is designed to have a transmittance of 0.5 at the 1.55μm band %≤T≤10%. 3.如权利要求2所述的固体激光器,其特征在于:将输入和输出镜分别直接镀在所述的增益介质的一个或两个相对端面上。3. The solid-state laser according to claim 2, wherein the input and output mirrors are respectively directly plated on one or two opposite end faces of the gain medium. 4.一种1.55μm波段固体脉冲激光器,其特征在于:在权利要求2所述的激光器的增益介质和输出镜之间插入1.55μm波段的调Q或锁模元件;或者,将调Q和锁模元件同时置于激光谐振腔中。4. A 1.55 μm band solid-state pulsed laser, characterized in that: between the gain medium of the laser described in claim 2 and the output mirror, Q-switching or mode-locking elements of the 1.55 μm band are inserted; or, Q-switching and locking The mode element is placed in the laser cavity at the same time. 5.如权利要求4所述的固体脉冲激光器,其特征在于:将输入镜直接镀在所述的增益介质的输入端面上。5. The solid-state pulsed laser according to claim 4, wherein the input mirror is directly plated on the input end surface of the gain medium. 6.如权利要求4或5所述的固体脉冲激光器,其特征在于:将输出镜直接镀在所述的调Q或锁模元件的输出端面上。6. The solid-state pulsed laser according to claim 4 or 5, characterized in that the output mirror is directly plated on the output end face of the Q-switching or mode-locking element. 7.一种1.55μm波段可调谐固体激光器,其特征在于:在权利要求2所述的激光器的增益介质和输出镜之间插入1.55μm波段的波长调谐元件。7. A tunable solid-state laser in the 1.55 μm band, characterized in that: a wavelength tuning element in the 1.55 μm band is inserted between the gain medium and the output mirror of the laser according to claim 2. 8.一种1.55μm波段倍频激光器,其特征在于:在权利要求2所述的激光器的增益介质和输出镜之间插入1.55μm波段的倍频晶体,激光谐振腔输出镜设计为在1.55μm波段处透过率小于0.5%,在倍频波段处透过率大于80%。8. A 1.55 μm band frequency doubling laser, characterized in that: a frequency doubling crystal of the 1.55 μm band is inserted between the gain medium and the output mirror of the laser according to claim 2, and the output mirror of the laser resonator is designed to be at 1.55 μm The transmittance at the band is less than 0.5%, and the transmittance at the octave band is greater than 80%. 9.如权利要求8所述的倍频激光器,其特征在于:将输出镜直接镀在所述的倍频晶体的输出端面上。9. The frequency doubling laser according to claim 8, wherein the output mirror is directly plated on the output end surface of the frequency doubling crystal.
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