CN105063755B - The mesosilicate crystal of activated by erbium ions and its 1.55 micron waveband Solid Laser Elements - Google Patents
The mesosilicate crystal of activated by erbium ions and its 1.55 micron waveband Solid Laser Elements Download PDFInfo
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Abstract
The mesosilicate crystal of activated by erbium ions and its 1.55 micron waveband Solid Laser Elements, are related to laser crystal and devices field.The molecular formula of the crystalloid is：(ErxYbyRe(1‑x‑y))2Si2O7Or (ErxYb1‑x)2Si2O7, wherein x=0.002 0.02, y=0.05 0.5, the combination of a certain element or some elements in Re Y, Gd, Lu element.Using this crystalloid as gain media, using the semiconductor laser pumping of wave band near 976nm, high performance 1.55 mu m waveband Solid State Laser output can be achieved.
Description
Technical field
The present invention relates to laser crystal and devices field.
Background technology
Utilize erbium ion4I13/2→4I15/21.55 mu m waveband lasers that transition obtains are in fiber optic communication and propagation in atmosphere window
Mouthful, and to eye-safe, national defence and civil area can be widely used in.A kind of technological approaches for obtaining the wave band of laser is to adopt
With the Yb to wavelength semiconductor laser near 976nm with larger absorption cross-section3+As sensitized ions, made by energy transmission
Er3+Population arrives4I11/2On energy level, then pass through4I11/2→4I13/2Radiationless relaxation, make upper laser level4I13/2Obtain effectively
Population, finally by4I13/2→4I15/2The laser output of 1.55 mu m wavebands is realized in transition.
Mesosilicate crystal physico-chemical property is stable, hardness is high, good in thermal property.Erbium ion has shorter in this crystalloid4I11/2Energy level fluorescence lifetime (about 9 μ s), therefore most of particle on pumping level can pass through quick radiationless relaxation cloth
Upper laser level is occupied, realizes the high-efficiency operation of 1.55 mu m waveband lasers.It is meanwhile longer4I13/2Energy level fluorescence lifetime is (about
9ms) it is also beneficial to Er3+The energy storage of upper laser level, the crystal heat production as caused by radiationless relaxation is reduced, reduces laser crystal
Fuel factor.
The content of the invention
Make it is an object of the invention to provide erbium ion activated mesosilicate laser crystal, and using this crystalloid
For gain media, efficient and high average output power 1.55 mu m waveband Solid State Lasers are obtained.
The present invention includes following technical scheme：
1. erbium ion activated mesosilicate laser crystal.The molecular formula of the crystalloid is：(ErxYbyRe(1-x-y))2Si2O7Or (ErxYb1-x)2Si2O7, wherein x=0.002-0.02, y=0.05-0.5, a certain element in Re Y, Gd, Lu element
Or the combination of some elements.
A kind of 2. 1.55 mu m waveband solid state lasers, by semiconductor laser pumping system, laserresonator and gain media
Composition, it is characterised in that：Using gain media of the crystal as described in item 1 as the laser；Semiconductor laser pumping system
Including wavelength semiconductor laser near 976nm and the optical coupler being placed between semiconductor laser and gain media；Swash
Optical cavity is made up of input and outgoing mirror；Input mirror is designed as wavelength transmitance T >=70% near 976nm, at 1.55 μm
Transmitance T≤1% at wave band；Outgoing mirror is designed as transmitance 0.5%≤T≤10% at 1.55 mu m wavebands.
3. the solid state laser as described in item 2, it is characterised in that：Input and outgoing mirror are distinguished into direct plating in described increasing
On one or two opposing end surface of beneficial medium.
A kind of 4. 1.55 mu m waveband solid pulse lasers, it is characterised in that：In the gain media of the laser described in item 2
The tune Q or locked mode element of 1.55 mu m wavebands are inserted between outgoing mirror；Also Q and locked mode element can will be adjusted to be placed in laser resonance simultaneously
In chamber.
5. the solid state laser as described in item 4, it is characterised in that：By input mirror direct plating in the defeated of described gain media
Enter on end face；Also can be by outgoing mirror direct plating on described tune Q or locked mode element output end face.
A kind of 6. 1.55 mu m waveband tunable solid lasers, it is characterised in that：It is situated between in the gain of the laser described in item 2
The wavelength tuning element of 1.55 mu m wavebands is inserted between matter and outgoing mirror.
A kind of 7. 1.55 mu m waveband frequency double lasers, it is characterised in that：In the gain media of the laser described in item 2 and defeated
The frequency-doubling crystal of 1.55 mu m wavebands is inserted between appearance, it is small that laserresonator outgoing mirror is designed as the transmitance at 1.55 mu m wavebands
In 0.5%, transmitance is more than 80% at frequency multiplication wave band；Also can by outgoing mirror direct plating described frequency-doubling crystal output end
On face.
Implement technical solution of the present invention to have an advantageous effect in that：With (ErxYbyRe(1-x-y))2Si2O7Or (ErxYb1-x)2Si2O7Crystal is gain media, can obtain high-output power and efficient continuous and high pulse energy, high repetition frequency and
The mu m waveband Solid State Laser of Q impulse 1.55 of narrow spaces.
Embodiment
Example 1:976nm semiconductor laser end pumpings Er:Yb:Lu2Si2O7Crystal realizes 1.53 μm of Solid State Laser outputs.
Utilize Czochralski grown (Er0.0025Yb0.1Lu0.8975)2Si2O7Laser crystal.The crystal belongs to monoclinic system, there is three
Individual optical main axis, respectively X, Y, Z.After being oriented using petrographic microscope, XY is taken to cut into slices, due to the suction at pump light 976nm
It is about 15cm to receive coefficient-1, the absorptivity cutting thickness according to 80% is 1mm (end area is generally square millimeter to square centimeter)
The crystal prototype, be fixed on after the polishing of end face it is middle have be placed on the copper seat of light hole in laser cavity.Laser cavity inputs mirror
The transmitance T=90% at 976nm wavelength, the transmitance T=0.1% at 1.53 mum wavelengths；Laser cavity outgoing mirror is at 1.53 μm
Transmitance T=3.5% at wavelength.976nm semiconductor lasers end pumping using 10W is that can obtain continuous power to be higher than 1.5W
1.53 μm of Solid State Lasers output.Laser cavity can also be inputted and outgoing mirror distinguishes direct plating at two ends of the laser crystal
On face, to realize same purpose.
Example 2：976nm semiconductor laser end pumpings Er:Yb:Lu2Si2O7Crystal realizes 1.53 μm of solid lasers
Output.
Directly by passive Q-adjusted (such as Co of 1.53 mu m wavebands2+:MgAl2O4, Co2+:ZnSe, Cr2+:ZnSe etc.) or acousto-optic
Adjust in Q module insertion example 1 between laser crystal and outgoing mirror, you can realize 1.53 μm of adjusting Q pulse laser operatings.It can also incite somebody to action
Outgoing mirror direct plating is on the output end face of passive Q-adjusted or acousto-optic Q modulation module, to realize same purpose.
Example 3：976nm semiconductor laser end pumpings Er:Yb:Lu2Si2O7Crystal realizes that 1520-1570nm is tunable solid
Volumetric laser exports.
By laser crystal sample in example 1 be fixed on it is middle have be placed on the copper seat of light hole in laser cavity.Laser cavity
Mirror transmitance T=90% at 976nm wavelength is inputted, in 1.5-1.6 μm of transmitance T=0.1%；Laser cavity outgoing mirror is in 1.5-
1.6 μm of transmitance T=1%.Wavelength tuning element (birefringent filter, the grating or prism etc.) insertion of 1.55 mu m wavebands is swashed
Between luminescent crystal and laser cavity outgoing mirror, it is tunable that 1520-1570nm can be achieved using 976nm semiconductor lasers end pumping
Laser exports.
Example 4：976nm semiconductor laser end pumpings Er:Yb:Lu2Si2O7Crystal realizes that 810nm frequency multiplied solid laser is defeated
Go out.
It will directly swash in nonlinear optical crystal (such as KTP, LBO, β-BBO) the insertion example 1 of frequency multiplication 1620nm wave bands
Between luminescent crystal and outgoing mirror.Transmitance T=90% at 976nm wavelength is plated in laser cavity input mirror, in 1620 and 810nm ripples
The deielectric-coating of strong point high anti-(T≤0.5%)；High anti-(T≤0.5%) at 1620nm wavelength, frequency-doubled wavelength is plated on outgoing mirror
The deielectric-coating of high (T >=80%) thoroughly at 810nm.Utilize 976nm semiconductor laser pumpings, you can realize that 810nm double-frequency lasers are defeated
Go out.Can also be by outgoing mirror direct plating on the output end face of nonlinear optical crystal, to realize same purpose.
Example 5：976nm semiconductor laser end pumpings Er:Yb:Gd2Si2O7Crystal realizes 1.56 μm of Solid State Laser outputs.
Utilize Czochralski grown (Er0.008Yb0.25Gd0.742)2Si2O7Laser crystal.The crystal belongs to monoclinic system, there is three
Individual optical main axis, respectively X, Y, Z.After being oriented using petrographic microscope, XZ is taken to cut into slices, due to the suction at pump light 976nm
It is about 40cm to receive coefficient-1, according to 80% absorptivity cutting thickness for 400 μm (end area be generally square millimeter to square li
Rice) the crystal prototype, be fixed on after the polishing of end face it is middle have be placed on the copper seat of light hole in laser cavity.Laser cavity inputs
Mirror transmitance T=90% at 976nm wavelength, the transmitance T=0.1% at 1.56 mum wavelengths；Laser cavity outgoing mirror is in 1.56 μ
Transmitance T=2.0% at m wavelength.Continuous power is can obtain using 10W 976nm semiconductor lasers end pumping to be higher than
1.2W 1.56 μm of Solid State Lasers output.Laser cavity can also be inputted and outgoing mirror distinguishes direct plating the two of the laser crystal
On individual end face, to realize same purpose.
Example 6：976nm semiconductor laser end pumpings Er:Yb:Y2Si2O7Crystal realizes 1.6 μm of Solid State Laser outputs.
Utilize Czochralski grown (Er0.01Yb0.4Y0.59)2Si2O7Laser crystal.The crystal belongs to monoclinic system, there is three light
Learn main shaft, respectively X, Y, Z.After being oriented using petrographic microscope, XY is taken to cut into slices, due to the absorption system at pump light 976nm
Number is about 60cm-1, it is 250 μm (end area is generally square millimeter to square centimeter) according to 80% absorptivity cutting thickness
The crystal prototype, be fixed on after the polishing of end face it is middle have be placed on the copper seat of light hole in laser cavity.Laser cavity input mirror exists
Transmitance T=90% at 976nm wavelength, the transmitance T=0.1% at 1.6 mum wavelengths；Laser cavity outgoing mirror is in 1.6 mum wavelengths
Locate transmitance T=1.0%.976nm semiconductor lasers end pumping using 10W is that can obtain continuous power higher than 0.7W's
1.6 μm of Solid State Laser outputs.Laser cavity can also be inputted and outgoing mirror distinguishes direct plating in two end faces of the laser crystal
On, to realize same purpose.
Example 7：976nm semiconductor laser end pumpings Er:Yb2Si2O7Crystal realizes 1.54 μm of Solid State Laser outputs.
Utilize Czochralski grown (Er0.015Yb0.985)2Si2O7Laser crystal.After being oriented using petrographic microscope, XY is taken to cut
Piece, because the absorption coefficient at pump light 976nm is about 160cm-1, it is 100 μm of (ends according to 80% absorptivity cutting thickness
Area is generally square millimeter to square centimeter) the crystal prototype, the middle copper seat for having light hole is fixed on after the polishing of end face
On be placed in laser cavity.Laser cavity input mirror the transmitance T=90% at 976nm wavelength, the transmitance T at 1.54 mum wavelengths
=0.1%；Laser cavity outgoing mirror transmitance T=2.5% at 1.54 mum wavelengths.Utilize 10W 976nm semiconductor lasers end face
Pumping is that can obtain 1.54 μm Solid State Lasers of the continuous power higher than 1.0W to export.Laser cavity can also be inputted and outgoing mirror divides
Other direct plating is on two end faces of the laser crystal, to realize same purpose.
Claims (9)
1. a kind of 1.55 mu m waveband laser devices activated by erbium ions mesosilicate crystal, the molecular formula of the crystalloid are：
(ErxYbyRe(1-x-y))2Si2O7, wherein x=0.002-0.02, y=0.05-0.5, in Re Y, Gd, Lu element a certain element or
The combination of some elements；Or its molecular formula is：(ErxYb1-x)2Si2O7, wherein x=0.002-0.015.
2. a kind of 1.55 mu m waveband solid state lasers, are made up of semiconductor laser pumping system, laserresonator and gain media,
It is characterized in that：Gain using a kind of 1.55 mu m waveband laser devices by the use of activated by erbium ions mesosilicate crystal as the laser is situated between
Matter, the molecular formula of the crystalloid are：(ErxYbyRe(1-x-y))2Si2O7Or (ErxYb1-x)2Si2O7, wherein x=0.002-0.02, y
The combination of a certain element or some elements in=0.05-0.5, Re Y, Gd, Lu element；Semiconductor laser pumping system includes
Wavelength semiconductor laser and the optical coupler being placed between semiconductor laser and gain media near 976nm；Laser is humorous
The chamber that shakes is made up of input and outgoing mirror；Input mirror is designed as transmitance T >=70% near 976nm wavelength, in 1.55 mu m wavebands
Locate transmitance T≤1%；Outgoing mirror is designed as transmitance 0.5%≤T≤10% at 1.55 mu m wavebands.
3. solid state laser as claimed in claim 2, it is characterised in that：Input and outgoing mirror are distinguished into direct plating described
On one or two opposing end surface of gain media.
A kind of 4. 1.55 mu m waveband solid pulse lasers, it is characterised in that：It is situated between in the gain of the laser described in claim 2
The tune Q or locked mode element of 1.55 mu m wavebands are inserted between matter and outgoing mirror；Or Q and locked mode element will be adjusted to be placed in laser simultaneously
In resonator.
5. solid pulse laser as claimed in claim 4, it is characterised in that：Mirror direct plating will be inputted in described gain to be situated between
On the input end face of matter.
6. the solid pulse laser as described in claim 4 or 5, it is characterised in that：By outgoing mirror direct plating in described tune Q
Or on the output end face of locked mode element.
A kind of 7. 1.55 mu m waveband tunable solid lasers, it is characterised in that：In the gain of the laser described in claim 2
The wavelength tuning element of 1.55 mu m wavebands is inserted between medium and outgoing mirror.
A kind of 8. 1.55 mu m waveband frequency double lasers, it is characterised in that：The laser described in claim 2 gain media and
The frequency-doubling crystal of 1.55 mu m wavebands is inserted between outgoing mirror, laserresonator outgoing mirror is designed as the transmitance at 1.55 mu m wavebands
Less than 0.5%, transmitance is more than 80% at frequency multiplication wave band.
9. frequency double laser as claimed in claim 8, it is characterised in that：By outgoing mirror direct plating in described frequency-doubling crystal
On output end face.
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| CN107620121A (en) * | 2016-07-14 | 2018-01-23 | 中国科学院福建物质结构研究所 | One kind mixes the molybdate laser crystal and its visible waveband Solid Laser Elements of samarium |
| CN106433644B (en) * | 2016-09-12 | 2018-06-26 | 东华大学 | A kind of red light fluorescent powder and preparation method thereof |
| CN106532423B (en) * | 2016-12-15 | 2019-07-30 | 中国科学院福建物质结构研究所 | A kind of resonance pumping 1.5-1.6 micron waveband solid state laser |
| CN109428257B (en) * | 2017-09-01 | 2020-05-05 | 中国科学院福建物质结构研究所 | Erbium ion doped silicate crystal and 1.5 micron wave band laser device thereof |
| CN111370988B (en) * | 2020-04-17 | 2021-08-10 | 中国科学院福建物质结构研究所 | 1.55 mu m wave band Q-switched pulse laser |
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| CN101545137A (en) * | 2008-03-25 | 2009-09-30 | 中国科学院福建物质结构研究所 | Erbium ion activated borate laser crystal and method for preparing same and application thereof |
| CN103972784B (en) * | 2014-04-09 | 2017-04-05 | 中国科学院福建物质结构研究所 | The thin disk laser of 1.5 to 1.6 micron wavebands of one kind |
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