CN105063755A - Erbium-ion-excited mesosilicate crystal and 1.55-mu-m-waveband solid laser thereof - Google Patents

Erbium-ion-excited mesosilicate crystal and 1.55-mu-m-waveband solid laser thereof Download PDF

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CN105063755A
CN105063755A CN201510558034.7A CN201510558034A CN105063755A CN 105063755 A CN105063755 A CN 105063755A CN 201510558034 A CN201510558034 A CN 201510558034A CN 105063755 A CN105063755 A CN 105063755A
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laser
waveband
crystal
gain media
mirror
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CN105063755B (en
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王晗
黄艺东
陈雨金
黄建华
龚兴红
林炎富
罗遵度
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Fujian Institute of Research on the Structure of Matter of CAS
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Abstract

The invention provides an erbium-ion-excited mesosilicate crystal and a 1.55-mu-m-waveband solid laser thereof, relating to the fields of laser crystals and devices. The molecular formula of the crystal is (ErxYbyRe[1-x-y])2Si2O7 or (ErxYb[1-x])2Si2O7, wherein x=0.002-0.02, y=0.05-0.5, and Re is one or combination of a plurality of Y, Gd and Lu. The crystal can be used as a gain medium to implement high-performance 1.55-mu-m-waveband solid laser output by using a 976nm-or-so-waveband semiconductor laser pump.

Description

The pyrosilicate crystal of activated by erbium ions and 1.55 micron waveband Solid Laser Elements thereof
Technical field
The present invention relates to laser crystals and devices field.
Background technology
Utilize erbium ion 4i 13/2→ 4i 15/21.55 mu m waveband lasers that transition obtains are in opticfiber communication and propagation in atmosphere window, and to eye-safe, can be widely used in national defence and civil area.A kind of technological approaches obtaining this wave band of laser adopts to have the Yb of larger absorption cross section to wavelength semiconductor laser near 976nm 3+as sensitized ions, make Er by transmission ofenergy 3+population arrives 4i 11/2on energy level, then pass through 4i 11/2→ 4i 13/2radiationless relaxation, make upper laser level 4i 13/2obtain effective population, finally by 4i 13/2→ 4i 15/2transition realizes the Laser output of 1.55 mu m wavebands.
Pyrosilicate crystal physico-chemical property is stable, hardness is high, good in thermal property.Erbium ion has shorter in this crystalloid 4i 11/2energy level fluorescence lifetime (about 9 μ s), the most of particle therefore on pumping level can pass through radiationless relaxation population fast and, to upper laser level, realize the high-efficient operation of 1.55 mu m waveband lasers.Meanwhile, longer 4i 13/2energy level fluorescence lifetime (about 9ms) is also conducive to Er 3+the energy storage of upper laser level, reduces the crystal heat production caused by radiationless relaxation, reduces the heat effect of laser crystals.
Summary of the invention
The object of the present invention is to provide erbium ion activated pyrosilicate laser crystals, and adopt this crystalloid as gain media, obtain 1.55 mu m waveband Solid State Lasers that are efficient and high average output power.
The present invention includes following technical scheme:
1. erbium ion activated pyrosilicate laser crystals.This crystal-like molecular formula is: (Er xyb yre (1-x-y)) 2si 2o 7or (Er xyb 1-x) 2si 2o 7, wherein x=0.002-0.02, y=0.05-0.5, Re are the combination of a certain element or some elements in Y, Gd, Lu element.
2. 1.55 mu m waveband solid statelasers, are made up of semiconductor laser pumping system, laserresonator and gain media, it is characterized in that: adopt the crystal as described in item 1 as the gain media of this laser apparatus; The optical coupler that semiconductor laser pumping system comprises wavelength semiconductor laser near 976nm and is placed between semiconductor laser and gain media; Laserresonator is made up of input and output mirror; Input mirror is designed to wavelength transmitance T >=70% near 976nm, at 1.55 mu m waveband place transmitance T≤1%; Outgoing mirror is designed at 1.55 mu m waveband place transmitance 0.5%≤T≤10%.
3. the solid statelaser as described in item 2, is characterized in that: by input and output mirror difference direct plating on one or two opposing end surface of described gain media.
4. 1.55 mu m waveband solid pulse lasers, is characterized in that: between the gain media and outgoing mirror of the laser apparatus described in item 2, insert 1.55 mu m wavebands tune Q or locked mode element; Also tune Q and locked mode element can be placed in laserresonator simultaneously.
5. the solid statelaser as described in item 4, is characterized in that: by input mirror direct plating on the input end face of described gain media; Also can by outgoing mirror direct plating on the output end face of described tune Q or locked mode element.
6. 1.55 mu m waveband tunable solid lasers, is characterized in that: the wavelength tuning element inserting 1.55 mu m wavebands between the gain media and outgoing mirror of the laser apparatus described in item 2.
7. a mu m waveband frequency double laser, it is characterized in that: the frequency-doubling crystal inserting 1.55 mu m wavebands between the gain media and outgoing mirror of the laser apparatus described in item 2, laserresonator outgoing mirror is designed to be less than 0.5% in 1.55 mu m waveband place transmitances, and at frequency multiplication wave band place, transmitance is greater than 80%; Also can by outgoing mirror direct plating on the output end face of described frequency-doubling crystal.
The beneficial effect that enforcement technical solution of the present invention has is: with (Er xyb yre (1-x-y)) 2si 2o 7or (Er xyb 1-x) 2si 2o 7crystal is gain media, can obtain high-output power and high efficiency continuously and the Q impulse 1.55 mu m waveband Solid State Laser of high pulse energy, high repetition frequency and narrow spaces.
Embodiment
Example 1:976nm semiconductor laser end pumping Er:Yb:Lu 2si 2o 7crystal realizes 1.53 μm of Solid State Lasers and exports.
Utilize Czochralski grown (Er 0.0025yb 0.1lu 0.8975) 2si 2o 7laser crystals.This crystal belongs to oblique system, has three optical main axis, is respectively X, Y, Z.After utilizing polarizing microscope orientation, get XY section, owing to being about 15cm at the uptake factor at pump light 976nm place -1, the specific absorption cutting thickness according to 80% is this crystal prototype of 1mm (end area is generally square millimeter to square centimeter), and being fixed on centre after end face polishing to have on the copper seat of light hole and to be placed in laser cavity.Laser cavity inputs mirror at 976nm wavelength place transmitance T=90%, at 1.53 mum wavelength place transmitance T=0.1%; Laser cavity outgoing mirror is at 1.53 mum wavelength place transmitance T=3.5%.Utilize the 976nm semiconductor laser end pumping of 10W can obtain the 1.53 μm Solid State Lasers outputs of continuous output higher than 1.5W.Also laser cavity input and output mirror can be distinguished direct plating on two end faces of this laser crystals, to realize same object.
Example 2:976nm semiconductor laser end pumping Er:Yb:Lu 2si 2o 7crystal realizes 1.53 μm of solid lasers and exports.
Directly by passive Q-adjusted of 1.53 mu m wavebands (as Co 2+: MgAl 2o 4, Co 2+: ZnSe, Cr 2+: ZnSe etc.) or acousto-optic Q modulation module to insert in example 1 between laser crystals and outgoing mirror, 1.53 μm of adjusting Q pulse lasers runnings can be realized.Also can by outgoing mirror direct plating on the output end face of passive Q-adjusted or acousto-optic Q modulation module, to realize same object.
Example 3:976nm semiconductor laser end pumping Er:Yb:Lu 2si 2o 7crystal realizes the tunable Solid State Laser of 1520-1570nm and exports.
Laser crystals sample in example 1 is fixed on centre to have on the copper seat of light hole and to be placed in laser cavity.Laser cavity inputs mirror at 976nm wavelength place transmitance T=90%, at 1.5-1.6 μm of transmitance T=0.1%; Laser cavity outgoing mirror is at 1.5-1.6 μm of transmitance T=1%.The wavelength tuning element (birefringent filter, grating or prism etc.) of 1.55 mu m wavebands is inserted between laser crystals and laser cavity outgoing mirror, utilizes 976nm semiconductor laser end pumping can realize 1520-1570nm tunable laser and export.
Example 4:976nm semiconductor laser end pumping Er:Yb:Lu 2si 2o 7crystal realizes 810nm frequency multiplied solid Laser output.
Directly the non-linear optic crystal (as KTP, LBO, β-BBO etc.) of frequency multiplication 1620nm wave band to be inserted in example 1 between laser crystals and outgoing mirror.976nm wavelength place transmitance T=90% is plated, 1620 and the deielectric-coating of 810nm wavelength place high anti-(T≤0.5%) at laser cavity input mirror; Outgoing mirror plates 1620nm wavelength place high anti-(T≤0.5%), the deielectric-coating of frequency-doubled wavelength 810nm place high (T >=80%) thoroughly.Utilize 976nm semiconductor laser pumping, 810nm double-frequency laser can be realized and export.Also can by outgoing mirror direct plating on the output end face of non-linear optic crystal, to realize same object.
Example 5:976nm semiconductor laser end pumping Er:Yb:Gd 2si 2o 7crystal realizes 1.56 μm of Solid State Lasers and exports.
Utilize Czochralski grown (Er 0.008yb 0.25gd 0.742) 2si 2o 7laser crystals.This crystal belongs to oblique system, has three optical main axis, is respectively X, Y, Z.After utilizing polarizing microscope orientation, get XZ section, owing to being about 40cm at the uptake factor at pump light 976nm place -1, the specific absorption cutting thickness according to 80% is this crystal prototype of 400 μm (end area is generally square millimeter to square centimeter), and being fixed on centre after end face polishing to have on the copper seat of light hole and to be placed in laser cavity.Laser cavity inputs mirror at 976nm wavelength place transmitance T=90%, at 1.56 mum wavelength place transmitance T=0.1%; Laser cavity outgoing mirror is at 1.56 mum wavelength place transmitance T=2.0%.Utilize the 976nm semiconductor laser end pumping of 10W can obtain the 1.56 μm Solid State Lasers outputs of continuous output higher than 1.2W.Also laser cavity input and output mirror can be distinguished direct plating on two end faces of this laser crystals, to realize same object.
Example 6:976nm semiconductor laser end pumping Er:Yb:Y 2si 2o 7crystal realizes 1.6 μm of Solid State Lasers and exports.
Utilize Czochralski grown (Er 0.01yb 0.4y 0.59) 2si 2o 7laser crystals.This crystal belongs to oblique system, has three optical main axis, is respectively X, Y, Z.After utilizing polarizing microscope orientation, get XY section, owing to being about 60cm at the uptake factor at pump light 976nm place -1, the specific absorption cutting thickness according to 80% is this crystal prototype of 250 μm (end area is generally square millimeter to square centimeter), and being fixed on centre after end face polishing to have on the copper seat of light hole and to be placed in laser cavity.Laser cavity inputs mirror at 976nm wavelength place transmitance T=90%, at 1.6 mum wavelength place transmitance T=0.1%; Laser cavity outgoing mirror is at 1.6 mum wavelength place transmitance T=1.0%.Utilize the 976nm semiconductor laser end pumping of 10W can obtain the 1.6 μm Solid State Lasers outputs of continuous output higher than 0.7W.Also laser cavity input and output mirror can be distinguished direct plating on two end faces of this laser crystals, to realize same object.
Example 7:976nm semiconductor laser end pumping Er:Yb 2si 2o 7crystal realizes 1.54 μm of Solid State Lasers and exports.
Utilize Czochralski grown (Er 0.015yb 0.985) 2si 2o 7laser crystals.After utilizing polarizing microscope orientation, get XY section, owing to being about 160cm at the uptake factor at pump light 976nm place -1, the specific absorption cutting thickness according to 80% is this crystal prototype of 100 μm (end area is generally square millimeter to square centimeter), and being fixed on centre after end face polishing to have on the copper seat of light hole and to be placed in laser cavity.Laser cavity inputs mirror at 976nm wavelength place transmitance T=90%, at 1.54 mum wavelength place transmitance T=0.1%; Laser cavity outgoing mirror is at 1.54 mum wavelength place transmitance T=2.5%.Utilize the 976nm semiconductor laser end pumping of 10W can obtain the 1.54 μm Solid State Lasers outputs of continuous output higher than 1.0W.Also laser cavity input and output mirror can be distinguished direct plating on two end faces of this laser crystals, to realize same object.

Claims (7)

1. erbium ion activated pyrosilicate laser crystals, this crystal-like molecular formula is: (Er xyb yre (1-x-y)) 2si 2o 7or (Er xyb 1-x) 2si 2o 7, wherein x=0.002-0.02, y=0.05-0.5, Re are the combination of a certain element or some elements in Y, Gd, Lu element.
2. 1.55 mu m waveband solid statelasers, are made up of semiconductor laser pumping system, laserresonator and gain media, it is characterized in that: crystal as claimed in claim 1 is as the gain media of this laser apparatus; The optical coupler that semiconductor laser pumping system comprises wavelength semiconductor laser near 976nm and is placed between semiconductor laser and gain media; Laserresonator is made up of input and output mirror; Input through being designed to transmitance T >=70% near 976nm wavelength, at 1.55 mu m waveband place transmitance T≤1%; Outgoing mirror is designed at 1.55 mu m waveband place transmitance 0.5%≤T≤10%.
3. solid statelaser as claimed in claim 2, is characterized in that: by input and output mirror difference direct plating on one or two opposing end surface of described gain media.
4. 1.55 mu m waveband solid pulse lasers, is characterized in that: between the gain media and outgoing mirror of laser apparatus according to claim 2, insert 1.55 mu m wavebands tune Q or locked mode element; Also tune Q and locked mode element can be placed in laserresonator simultaneously.
5. solid statelaser as according to claim 4 in item, is characterized in that: by input mirror direct plating on the input end face of described gain media; Also can by outgoing mirror direct plating on the output end face of described tune Q or locked mode element.
6. 1.55 mu m waveband tunable solid lasers, is characterized in that: the wavelength tuning element inserting 1.55 mu m wavebands between the gain media and outgoing mirror of laser apparatus according to claim 2.
7. a mu m waveband frequency double laser, it is characterized in that: the frequency-doubling crystal inserting 1.55 mu m wavebands between the gain media and outgoing mirror of laser apparatus according to claim 2, laserresonator outgoing mirror is designed to be less than 0.5% in 1.55 mu m waveband place transmitances, and at frequency multiplication wave band place, transmitance is greater than 80%; Also can by outgoing mirror direct plating on the output end face of described frequency-doubling crystal.
CN201510558034.7A 2015-09-06 2015-09-06 The mesosilicate crystal of activated by erbium ions and its 1.55 micron waveband Solid Laser Elements Active CN105063755B (en)

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CN106532423A (en) * 2016-12-15 2017-03-22 中国科学院福建物质结构研究所 Resonance pumping 1.5-1.6 micron waveband solid-state laser
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CN111370988A (en) * 2020-04-17 2020-07-03 中国科学院福建物质结构研究所 1.55 mu m wave band Q-switched pulse laser

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CN107620121A (en) * 2016-07-14 2018-01-23 中国科学院福建物质结构研究所 One kind mixes the molybdate laser crystal and its visible waveband Solid Laser Elements of samarium
CN106433644A (en) * 2016-09-12 2017-02-22 东华大学 Red-emit phosphor and preparing method thereof
CN106433644B (en) * 2016-09-12 2018-06-26 东华大学 A kind of red light fluorescent powder and preparation method thereof
CN106532423A (en) * 2016-12-15 2017-03-22 中国科学院福建物质结构研究所 Resonance pumping 1.5-1.6 micron waveband solid-state laser
CN109428257A (en) * 2017-09-01 2019-03-05 中国科学院福建物质结构研究所 The silicate crystal and its 1.5 micron waveband laser devices of erbium ion doping
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CN109428257B (en) * 2017-09-01 2020-05-05 中国科学院福建物质结构研究所 Erbium ion doped silicate crystal and 1.5 micron wave band laser device thereof
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CN111370988A (en) * 2020-04-17 2020-07-03 中国科学院福建物质结构研究所 1.55 mu m wave band Q-switched pulse laser
CN111370988B (en) * 2020-04-17 2021-08-10 中国科学院福建物质结构研究所 1.55 mu m wave band Q-switched pulse laser

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