CN203056358U - Pulse pumping type standing wave resonant cavity nanosecond pulse laser device - Google Patents

Pulse pumping type standing wave resonant cavity nanosecond pulse laser device Download PDF

Info

Publication number
CN203056358U
CN203056358U CN 201320079220 CN201320079220U CN203056358U CN 203056358 U CN203056358 U CN 203056358U CN 201320079220 CN201320079220 CN 201320079220 CN 201320079220 U CN201320079220 U CN 201320079220U CN 203056358 U CN203056358 U CN 203056358U
Authority
CN
China
Prior art keywords
pulse
bundling device
standing wave
pulsed laser
pump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201320079220
Other languages
Chinese (zh)
Inventor
梁崇智
曾和平
杨康文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Hantang Rapid Manufacturing Application Technology Research Institute Co ltd
Guangdong Huakuai Photon Technology Co ltd
Guangdong Huayi Laser Technology Co ltd
Original Assignee
Guangdong Hantang Quantum Optoelectronics Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong Hantang Quantum Optoelectronics Technology Co ltd filed Critical Guangdong Hantang Quantum Optoelectronics Technology Co ltd
Priority to CN 201320079220 priority Critical patent/CN203056358U/en
Application granted granted Critical
Publication of CN203056358U publication Critical patent/CN203056358U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Lasers (AREA)

Abstract

The utility model discloses a pulse pumping type standing wave resonance cavity nanosecond pulse laser device. The device comprises a pulse modulation circuit, a pump laser, a bean combiner, again optical fiber, an isolator and an output coupler, under the conditions of pulse pumping, a doped optical fiber in the resonant cavity not only has a function of a gain medium, but can also act as a saturable switch which responds quickly and generates laser pulse with nanosecond time domain width, the repetition frequency of pulse depends on the repetition frequency of pump light, and pulse width depends on the joint effect of energy inside the cavity and the length of the resonant cavity. The pulse pumping type standing wave resonance cavity nanosecond pulse laser device in the utility model has the advantages of simple structure, tunable pulse width, tunable repetition frequency, high light-light conversion efficiency, good stability and the like, and is suitable for various application occasions of industrial processing.

Description

A kind of pulse pump type standing wave resonance chamber ps pulsed laser and ns pulsed laser apparatus
[technical field]
The utility model relates to field of lasers, is specifically related to a kind of pulse pump type standing wave resonance chamber ps pulsed laser and ns pulsed laser apparatus.
[background technology]
Along with technology such as laser cutting, laser engraving, laser marking, laser scribing being extensive use of of clothes, electronics, little processing and other fields, also more urgent to the demand of the humorous nanosecond pulse of, high stability, pulsewidth and adjustable repetitive frequency.The method of the generation nanosecond pulse that present industrial processes field is commonly used mainly contains two big classes: the semiconductor seed source technology of acousto-optic Q modulation technology and the quick response of direct modulation.
The acousto-optic Q modulation technology is actually on the basis of body acoustooptic Q-switching has increased by two coupled fibers, is subject to the technological level of tail optical fiber and acousto-optic Q crystal coupling, and the insertion loss of whole Q switching is higher.The laser pulse width of acousto-optic Q modulation laser output is greatly about 100-300ns, and acoustooptic switch is poor to the switching capability of high-energy laser, its time domain waveform trailing edge time is long, pulse is asymmetric, and the restriction of modulated Q crystal switch time can't obtain the precipitous nanosecond pulse of rising edge.
Directly modulate the semiconductor seed source technology of response fast, the repetition rate tuning range is big, and impulse waveform is easy to control, but when being operated in than low-repetition-frequency, be subject to duty ratio, average power is very little, only hundreds of microwatts generally need multistage amplification could satisfy the demand of industrial processes.And, general direct pulse from the output of semiconductor seed source, its spectral width is 0.2-0.4nm only, so narrow spectrum width very easily excites various nonlinear effects in follow-up multistage amplification process, as the SBS stimulated Brillouin scattering, stimulated Raman scattering effect etc. cause the pulse frequency spectrum distortion, time domain distortion is when serious even burn gain fibre.
Therefore, be necessary to solve as above problem.
[utility model content]
The utility model has overcome the deficiency of above-mentioned technology, a kind of pulse pump type standing wave resonance chamber ps pulsed laser and ns pulsed laser apparatus is provided, its light light conversion efficiency height, good stability, high reflection fiber grating is connected to form standing wave resonance chamber for laser resonance by the fine grating of gain fibre and low light reflectivity, the pump light of pump laser is coupled into the standing wave resonance chamber by bundling device and carries out resonance, finally realizes nanosecond order pulse output.
For achieving the above object, the utility model has adopted following technical proposal:
A kind of pulse pump type standing wave resonance chamber ps pulsed laser and ns pulsed laser apparatus, include pump laser 2, the pulse modulated circuit 1 that is used for driving the required pump light of pump laser 2 outputs that is connected with pump laser 2, gain fibre 4, high reflection fiber grating 5, the fine grating 6 of low light reflectivity, described high reflection fiber grating 5 one ends are connected to form standing wave resonance chamber for laser resonance by fine grating 6 one ends of gain fibre 4 and low light reflectivity, the fine grating 6 of described low light reflectivity away from an end of high reflection fiber grating 5 as the nanosecond pulse output, described standing wave resonance chamber is provided with for the bundling device 3 that the pump light coupling of pump laser 2 is injected the standing wave resonance chamber, described bundling device 3 is provided with one and closes Shu Duan, one pump light input and a signal incident end, described pump laser 2 outputs are connected with bundling device 3 pump light inputs.
As optimizing embodiment, described bundling device 3 is arranged between gain fibre 4 and the fine grating 6 of low light reflectivity, and the Shu Duanyu gain fibre 4 that closes of bundling device 3 connects, and bundling device 3 signal incident ends are connected with the fine grating 6 of low light reflectivity.
As optimizing embodiment, described bundling device 3 is arranged on the fine grating 6 of low light reflectivity away from that end of high reflection fiber grating 5, and the fine grating 6 of Shu Duanyu low light reflectivity that closes of bundling device 3 connects bundling device 3 signal incident ends output nanosecond pulse.
As optimizing embodiment, described bundling device 3 is arranged between high reflection fiber grating 5 and the gain fibre 4, and the Shu Duanyu gain fibre 4 that closes of bundling device 3 connects, and bundling device 3 signal incident ends are connected with high reflection fiber grating 5.
As optimizing embodiment, described bundling device 3 is arranged on high reflection fiber grating 5 away from that end of the fine grating 6 of low light reflectivity, and the high reflection fiber grating 5 of Shu Duanyu that closes of bundling device 3 connects.
Aforesaid pump laser 2 is semiconductor laser.
Aforesaid bundling device 3 is wavelength division multiplexer or high power bundling device.
Single mode or double clad gain fibre that aforesaid gain fibre 4 is the doped rare earth element ion.
Compared with prior art, the beneficial effects of the utility model are:
1, laser oscillator is all optical fibre structure, and each device splice loss, splice attenuation is little, overcomes the acousto-optic Q modulation scheme and inserts the big shortcoming of loss.
2, doped gain fiber had both played the effect of gain, played the effect of optical switch again, and device is few, and cost is low, and stability is high.
3, utilize the nonlinear optical switching effect of gain fibre, under the effect of microsecond magnitude pumping pulse, produce the laser pulse of nanosecond order, compare with the scheme of Direct Modulating Diode Laser pipe, circuit complexity reduces greatly.
4, adopt the standing wave resonance cavity configuration, laser pulse is continuous absorptive pumping energy in the chamber, light light conversion efficiency height.
[description of drawings]
Fig. 1 is embodiment 1 structure principle chart of the present utility model.
Fig. 2 is embodiment 2 structure principle charts of the present utility model.
Fig. 3 is embodiment 3 structure principle charts of the present utility model.
Fig. 4 is embodiment 4 structure principle charts of the present utility model.
[embodiment]
Be described in further detail by the utility model feature of embodiment and other correlated characteristic below in conjunction with accompanying drawing, so that technical staff's of the same trade understanding:
Embodiment 1:
As shown in Figure 1, a kind of pulse pump type standing wave resonance chamber ps pulsed laser and ns pulsed laser apparatus, include pulse modulated circuit 1, pump laser 2, bundling device 3, gain fibre 4, the fine grating 6 of high reflection fiber grating 5 and low light reflectivity, described bundling device 3 is provided with one and closes Shu Duan, one pump light input and a signal incident end, described pump laser 2 outputs are connected with bundling device 3 pump light inputs, described high reflection fiber grating 5 one ends are connected with gain fibre 4 one ends, gain fibre 4 other ends are connected with the bundle end that closes of bundling device 3, fine grating 6 one ends of bundling device 3 signal incident ends and low light reflectivity are connected to form the standing-wave cavity for laser resonance, and fine grating 6 other ends of described low light reflectivity are as the nanosecond pulse output.
In the present embodiment, described pump laser 2 adopts output continuous light power 8-10W, the semiconductor laser of centre wavelength 976nm.
Described bundling device 3 adopts (2+1) * 1 high power bundling device, and signal incident end fiber type adopts 10/125 doubly clad optical fiber, closes bundle end fiber type and adopts 10/125 doubly clad optical fiber, and pump light input end fiber type adopts 105/125 energy-transmission optic fibre.
Described gain fibre 4 can adopt single mode or the double clad gain fibre of doped rare earth element ion, adopts the ytterbium-doped double-cladded-layer gain fibre to discuss in the present embodiment, and it is not as the restriction to this case protection range.
Described high reflection fiber grating 5 adopts center wave band 1060nm, and reflectivity is greater than 99% full optical fiber optical optical grid, and fiber type adopts 10/125 monomode fiber.
The fine grating 6 of described low light reflectivity adopts center wave band 1060nm, and reflectivity adopts 5% full optical fiber optical optical grid, and fiber type adopts 10/125 monomode fiber.
Semiconductor pump laser 2 is under the driving of pulse modulated circuit 1, producing time domain is nearly Gaussian, the microsecond magnitude pump light pulse that pulse duration and adjustable repetitive frequency are humorous, the pump light pulse is coupled into the standing wave resonance chamber through the pump light input of bundling device 3, an end that closes Shu Duanyu gain fibre 4 of bundling device 3 links to each other, pump light is through mixing ytterbium gain fibre 4, produce the small-pulse effect of spontaneous radiation, the other end of gain fibre 4 links to each other with an end of high reflection fiber grating 5, the laser pulse of spontaneous radiation is through high reflection fiber grating 5 reflections in the chamber, pass through gain fibre 4 again, bundling device 3 is to the fine grating 6 of low light reflectivity, part energy is reflected, enter in the standing-wave cavity again and amplify, another part energy sees through fine grating 6 outputs of low light reflectivity, realizes the output of nanosecond pulse.
Embodiment 2:
As shown in Figure 2, a kind of pulse pump type standing wave resonance chamber ps pulsed laser and ns pulsed laser apparatus, include pulse modulated circuit 1, pump laser 2, bundling device 3, gain fibre 4, the fine grating 6 of high reflection fiber grating 5 and low light reflectivity, described bundling device 3 is provided with one and closes Shu Duan, one pump light input and a signal incident end, described pump laser 2 outputs are connected with bundling device 3 pump light inputs, described high reflection fiber grating 5 one ends are connected with gain fibre 4 one ends, fine grating 6 one ends of gain fibre 4 other ends and low light reflectivity are connected to form standing wave harmonic wave chamber, fine grating 6 other ends of described low light reflectivity close the bundle end with bundling device 3 and are connected, by bundling device 3 signal incident ends output nanosecond pulse.
In the present embodiment, described pump laser 2 is output continuous light power 8-10W, the semiconductor laser of centre wavelength 976nm.
Described bundling device 3 adopts (2+1) * 1 bundling device, and signal incident end fiber type adopts 10/125 doubly clad optical fiber, and the signal output part fiber type adopts 10/125 doubly clad optical fiber, and pump light input end fiber type adopts 105/125 energy-transmission optic fibre.
Described gain fibre 4 is for mixing ytterbium single mode gain fibre.
Described high reflection fiber grating 5 adopts center wave band 1060nm, and reflectivity is greater than 99% full optical fiber optical optical grid, and fiber type adopts 10/125 monomode fiber.
The fine grating 6 of described low light reflectivity adopts center wave band 1060nm, and reflectivity is 10% full optical fiber optical optical grid, and fiber type adopts 10/125 monomode fiber.
Semiconductor pump laser 2 is under the driving of pulse modulated circuit 1, producing time domain is nearly Gaussian, the microsecond magnitude pump light pulse that pulse duration and adjustable repetitive frequency are humorous, the pump light pulse is coupled into standing-wave cavity through the pump light input of bundling device 3, pump light is through bundling device 3, the fine grating 6 of low light reflectivity, at the small-pulse effect of mixing the 4 generation spontaneous radiations of ytterbium gain fibre, the other end of gain fibre 4 links to each other with an end of high reflection fiber grating 5, the laser pulse of spontaneous radiation is through high reflection fiber grating 5 reflections in the chamber, arrive the fine grating 6 of low light reflectivity through gain fibre 4 again, part energy is reflected, enter in the standing-wave cavity again and amplify, after another part energy sees through the fine grating 6 of low light reflectivity, from the output of bundling device 3 signal incident ends, realize the output of nanosecond pulse.
Embodiment 3:
As shown in Figure 3, a kind of pulse pump type standing wave resonance chamber ps pulsed laser and ns pulsed laser apparatus, include pulse modulated circuit 1, pump laser 2, bundling device 3, gain fibre 4, the fine grating 6 of high reflection fiber grating 5 and low light reflectivity, described bundling device 3 is provided with one and closes Shu Duan, one pump light input and a signal incident end, described pump laser 2 outputs are connected with bundling device 3 pump light inputs, described high reflection fiber grating 5 one ends are connected with bundling device 3 signal incident ends, Shu Duanyu gain fibre 4 one ends that close of bundling device 3 connect, fine grating 6 one ends of gain fibre 4 other ends and low light reflectivity are connected to form the standing wave resonance chamber, and fine grating 6 other ends of described low light reflectivity are as the nanosecond pulse output.
In the present embodiment, described pump laser 2 is output continuous light power 8-10W, the semiconductor laser of centre wavelength 976nm.
Described bundling device 3 adopts wavelength division multiplexer, and signal incident end fiber type adopts 10/125 doubly clad optical fiber, closes bundle end fiber type and adopts 10/125 doubly clad optical fiber, and pump light input end fiber type adopts 105/125 energy-transmission optic fibre.
Described gain fibre 4 adopts the ytterbium-doped double-cladded-layer gain fibre.
Described high reflection fiber grating 5 adopts center wave band 1060nm, and reflectivity is greater than 99% full optical fiber optical optical grid, and fiber type adopts the HI1060 monomode fiber.
The fine grating 6 of described low light reflectivity adopts center wave band 1060nm, and reflectivity is 20% full optical fiber optical optical grid, and fiber type adopts the HI1060 monomode fiber.
Semiconductor pump laser 2 is under the driving of pulse modulated circuit 1, producing time domain is nearly Gaussian, the microsecond magnitude pump light pulse that pulse duration and adjustable repetitive frequency are humorous, the pump light pulse is coupled into the standing wave resonance chamber through the pump light input of bundling device 3, an end that closes Shu Duanyu gain fibre 4 of bundling device 3 links to each other, pump light is through mixing ytterbium gain fibre 4, produce the small-pulse effect of spontaneous radiation, the other end of gain fibre 4 links to each other with an end of the fine grating 6 of low light reflectivity, the pulse part energy of spontaneous radiation is through the fine grating 6 of low light reflectivity, realize the output of nanosecond pulse, another part energy is reflected, enter in the standing-wave cavity again and amplify, the signal incident end of bundling device 3 links to each other with an end of high reflection fiber grating 5, and the pulse of spontaneous radiation is reflected at this place in the chamber, forms the standing wave resonance chamber.
Embodiment 4:
As shown in Figure 4, a kind of pulse pump type standing wave resonance chamber ps pulsed laser and ns pulsed laser apparatus, include pulse modulated circuit 1, pump laser 2, bundling device 3, gain fibre 4, the fine grating 6 of high reflection fiber grating 5 and low light reflectivity, described bundling device 3 is provided with one and closes Shu Duan, one pump light input and a signal incident end, described pump laser 2 outputs are connected with bundling device 3 pump light inputs, described high reflection fiber grating 5 one ends are connected with gain fibre 4 one ends, fine grating 6 one ends of gain fibre 4 other ends and low light reflectivity are connected to form the standing wave resonance chamber, described bundling device 3 is arranged on high reflection fiber grating 5 other ends, and the high reflection fiber grating 5 of Shu Duanyu that closes of bundling device 3 connects, and fine grating 6 other ends of described low light reflectivity are as the nanosecond pulse output.
In the present embodiment, described pump laser 2 adopts output continuous light power 8-10W, the semiconductor laser of centre wavelength 976nm.
Described bundling device 3 adopts (2+1) * 1 high power bundling device, and signal incident end fiber type adopts 10/125 doubly clad optical fiber, and closing bundle end fiber type is 10/125 doubly clad optical fiber, and pump light input end fiber type adopts 105/125 energy-transmission optic fibre.
Described gain fibre 4 adopts mixes ytterbium single mode or double clad gain fibre.
Described high reflection fiber grating 5 adopts center wave band 1060nm, and reflectivity is greater than 99% full optical fiber optical optical grid, and fiber type adopts 10/125 monomode fiber.
The fine grating 6 of described low light reflectivity adopts center wave band 1060nm, and reflectivity is 20% full optical fiber optical optical grid, and fiber type adopts 10/125 monomode fiber.
Semiconductor pump laser 2 is under the driving of pulse modulated circuit 1, producing time domain is nearly Gaussian, the microsecond magnitude pump light pulse that pulse duration and adjustable repetitive frequency are humorous, the pump light pulse sees through high reflection fiber grating 5, be applied to and mix ytterbium gain fibre 4, produce the small-pulse effect of spontaneous radiation, the other end of gain fibre 4 links to each other with an end of the fine grating 6 of low light reflectivity, the pulse part energy of spontaneous radiation is through fine grating 6 outputs of low light reflectivity, realize the output of nanosecond pulse, another part energy is reflected, through gain fibre 4, in the reflection of high reflection fiber grating 5 places, form the standing wave resonance chamber.
As mentioned above; what this case was protected is a kind of pulse pump type standing wave resonance chamber ps pulsed laser and ns pulsed laser apparatus; high reflection fiber grating 5 is connected to form standing wave resonance chamber for laser resonance by the fine grating 6 of gain fibre 4 and low light reflectivity; the pump light of pump laser 2 is coupled into the standing wave resonance chamber by bundling device 3 and carries out resonance, finally realizes nanosecond order pulse output.All equivalents identical with this case structure or this case specific embodiment all should be shown in the protection range that falls into this case.

Claims (8)

1. pulse pump type standing wave resonance chamber ps pulsed laser and ns pulsed laser apparatus, it is characterized in that: include pump laser (2), the pulse modulated circuit (1) that is used for driving the required pump light of pump laser (2) output that is connected with pump laser (2), gain fibre (4), high reflection fiber grating (5), the fine grating (6) of low light reflectivity, described high reflection fiber grating (5) one ends are connected to form standing wave resonance chamber for laser resonance by fine grating (6) one ends of gain fibre (4) and low light reflectivity, the fine grating of described low light reflectivity (6) away from an end of high reflection fiber grating (5) as the nanosecond pulse output, described standing wave resonance chamber is provided with for the bundling device (3) that the pump light coupling of pump laser (2) is injected the standing wave resonance chamber, described bundling device (3) is provided with one and closes Shu Duan, one pump light input and a signal incident end, described pump laser (2) output is connected with bundling device (3) pump light input.
2. a kind of pulse pump type standing wave resonance according to claim 1 chamber ps pulsed laser and ns pulsed laser apparatus, it is characterized in that described bundling device (3) is arranged between gain fibre (4) and the fine grating of low light reflectivity (6), the Shu Duanyu gain fibre (4) that closes of bundling device (3) connects, and bundling device (3) signal incident end is connected with the fine grating of low light reflectivity (6).
3. a kind of pulse pump type standing wave resonance according to claim 1 chamber ps pulsed laser and ns pulsed laser apparatus, it is characterized in that described bundling device (3) is arranged on the fine grating of low light reflectivity (6) away from that end of high reflection fiber grating (5), the fine grating of Shu Duanyu low light reflectivity (6) that closes of bundling device (3) connects, bundling device (3) signal incident end output nanosecond pulse.
4. a kind of pulse pump type standing wave resonance according to claim 1 chamber ps pulsed laser and ns pulsed laser apparatus, it is characterized in that described bundling device (3) is arranged between high reflection fiber grating (5) and the gain fibre (4), the Shu Duanyu gain fibre (4) that closes of bundling device (3) connects, and bundling device (3) signal incident end is connected with high reflection fiber grating (5).
5. a kind of pulse pump type standing wave resonance according to claim 1 chamber ps pulsed laser and ns pulsed laser apparatus, it is characterized in that described bundling device (3) is arranged on high reflection fiber grating (5) away from that end of the fine grating of low light reflectivity (6), the high reflection fiber grating of Shu Duanyu (5) that closes of bundling device (3) connects.
6. a kind of pulse pump type standing wave resonance according to claim 1 chamber ps pulsed laser and ns pulsed laser apparatus is characterized in that described pump laser (2) is semiconductor laser.
7. a kind of pulse pump type standing wave resonance according to claim 1 chamber ps pulsed laser and ns pulsed laser apparatus is characterized in that described bundling device (3) is wavelength division multiplexer or high power bundling device.
8. a kind of pulse pump type standing wave resonance according to claim 1 chamber ps pulsed laser and ns pulsed laser apparatus is characterized in that described gain fibre (4) is the single mode of doped rare earth element ion or double clad gain fibre.
CN 201320079220 2013-02-20 2013-02-20 Pulse pumping type standing wave resonant cavity nanosecond pulse laser device Expired - Lifetime CN203056358U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201320079220 CN203056358U (en) 2013-02-20 2013-02-20 Pulse pumping type standing wave resonant cavity nanosecond pulse laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201320079220 CN203056358U (en) 2013-02-20 2013-02-20 Pulse pumping type standing wave resonant cavity nanosecond pulse laser device

Publications (1)

Publication Number Publication Date
CN203056358U true CN203056358U (en) 2013-07-10

Family

ID=48739278

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201320079220 Expired - Lifetime CN203056358U (en) 2013-02-20 2013-02-20 Pulse pumping type standing wave resonant cavity nanosecond pulse laser device

Country Status (1)

Country Link
CN (1) CN203056358U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103151684A (en) * 2013-02-20 2013-06-12 广东汉唐量子光电科技有限公司 Pulse pump type standing wave resonant cavity nanosecond pulse laser
CN103500912A (en) * 2013-09-27 2014-01-08 江苏天元激光科技有限公司 All-fiber Q-switched fiber laser based on stimulated Brillouin scattering
CN106558828A (en) * 2017-01-22 2017-04-05 昆山华辰光电科技有限公司 The pulse MOPA optical fiber lasers of annular resonance intonation Q

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103151684A (en) * 2013-02-20 2013-06-12 广东汉唐量子光电科技有限公司 Pulse pump type standing wave resonant cavity nanosecond pulse laser
CN103500912A (en) * 2013-09-27 2014-01-08 江苏天元激光科技有限公司 All-fiber Q-switched fiber laser based on stimulated Brillouin scattering
CN103500912B (en) * 2013-09-27 2015-08-12 江苏天元激光科技有限公司 Based on the all-fiber Q adjusting optical fiber laser of stimulated Brillouin scattering
CN106558828A (en) * 2017-01-22 2017-04-05 昆山华辰光电科技有限公司 The pulse MOPA optical fiber lasers of annular resonance intonation Q

Similar Documents

Publication Publication Date Title
CN103151684A (en) Pulse pump type standing wave resonant cavity nanosecond pulse laser
CN108963736B (en) A kind of high-peak power picosecond and nanosecond short-wavelength light fibre laser
CN100470347C (en) Narrow pulse fiber amplifier
CN104409954A (en) 1.5 micrometer nanosecond pulse double pass and double clad fiber amplifier
CN103346472B (en) 100MHz Gao Zhongying, 1ns narrow spaces narrow-linewidth laser Hybrid amplifier devices and methods therefor
CN103022862A (en) Random waveform nanosecond pulse high-fidelity amplifying device
CN104332809A (en) Pulse-width-adjustable pulsed optical fiber laser device based on acousto-optical switch
CN103633546A (en) Dual-wavelength dissipative soliton mode-locked laser
CN203056358U (en) Pulse pumping type standing wave resonant cavity nanosecond pulse laser device
CN104009380A (en) 1.6-micron wave band pulse type single-frequency linear polarization laser
CN203014155U (en) Arbitrary-waveform nanosecond pulse high fidelity amplifying device
CN203631965U (en) Double-wavelength all-fiber dissipative soliton mode-locked laser
CN105337146B (en) A kind of high peak power pulse mixes thulium laser
CN205231454U (en) 2um transfers Q pulse and mixes thulium fiber laser
CN202276060U (en) Self-Raman frequency conversion self-locking mode solid laser
CN203150894U (en) Pulse pump type annular resonant cavity nanosecond pulse laser device
CN219937586U (en) Single-frequency pulse fiber laser based on cascade four-wave mixing pulse width compression
CN110459939B (en) Active Q-switched fiber laser with narrow line width, narrow pulse width and high repetition frequency
CN103199414A (en) Pulse pumping type annular resonant cavity nanosecond pulse laser
CN102244360A (en) Acousto-optic Q-switched high-power pulse fiber laser
CN216598384U (en) Stimulated Brillouin scattering and stimulated Raman scattering combined compressed ultrashort pulse laser
CN110932068B (en) 1.7 mu m waveband pumping amplification double-modulation high-power repetition frequency adjustable optical fiber laser
CN209200363U (en) Sub- THz high power picosecond optical fiber laser based on MOPA structure
CN208849224U (en) THz high repetition frequency high power femto second optical fiber laser based on dispersive wave
CN203631967U (en) Pulse-width configurable Q-switching pulse laser oscillator

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20170505

Address after: 528400 B building, No. 3, No.1 Torch Road, Torch Development Zone, Zhongshan, Guangdong, third

Co-patentee after: GUANGDONG HANTANG RAPID MANUFACTURING APPLICATION TECHNOLOGY RESEARCH INSTITUTE Co.,Ltd.

Patentee after: Guangdong Hantang Quantum Optoelectronics Technology Co.,Ltd.

Address before: 528400 Zhongshan Province Torch Development Zone, Guangdong Road, No. 6

Patentee before: Guangdong Hantang Quantum Optoelectronics Technology Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 528400 zone a, third floor, No. 28, Yuquan Road, Torch Development Zone, Zhongshan City, Guangdong Province

Patentee after: GUANGDONG HUAKUAI PHOTON TECHNOLOGY CO.,LTD.

Patentee after: GUANGDONG HANTANG RAPID MANUFACTURING APPLICATION TECHNOLOGY RESEARCH INSTITUTE Co.,Ltd.

Address before: 528400 floor 3, building B, zone 1, No. 3, Juye Road, Torch Development Zone, Zhongshan City, Guangdong Province

Patentee before: Guangdong Hantang Quantum Optoelectronics Technology Co.,Ltd.

Patentee before: GUANGDONG HANTANG RAPID MANUFACTURING APPLICATION TECHNOLOGY RESEARCH INSTITUTE Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20220511

Address after: 528400 zone a, third floor, No. 28, Yuquan Road, Torch Development Zone, Zhongshan City, Guangdong Province

Patentee after: GUANGDONG HUAKUAI PHOTON TECHNOLOGY CO.,LTD.

Patentee after: GUANGDONG HUAYI LASER TECHNOLOGY Co.,Ltd.

Address before: 528400 zone a, third floor, No. 28, Yuquan Road, Torch Development Zone, Zhongshan City, Guangdong Province

Patentee before: GUANGDONG HUAKUAI PHOTON TECHNOLOGY CO.,LTD.

Patentee before: GUANGDONG HANTANG RAPID MANUFACTURING APPLICATION TECHNOLOGY RESEARCH INSTITUTE Co.,Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20130710