CN105633786A - Multi-wavelength all-solid-state yellow-light laser - Google Patents

Multi-wavelength all-solid-state yellow-light laser Download PDF

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Publication number
CN105633786A
CN105633786A CN201610185994.8A CN201610185994A CN105633786A CN 105633786 A CN105633786 A CN 105633786A CN 201610185994 A CN201610185994 A CN 201610185994A CN 105633786 A CN105633786 A CN 105633786A
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China
Prior art keywords
wavelength
crystal
laser
solid
yellow
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CN201610185994.8A
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Inventor
游振宇
孙益坚
涂朝阳
徐金龙
朱昭捷
王燕
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Fujian Institute of Research on the Structure of Matter of CAS
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Fujian Institute of Research on the Structure of Matter of CAS
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Priority to CN201610185994.8A priority Critical patent/CN105633786A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/1086—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using scattering effects, e.g. Raman or Brillouin effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/163—Solid materials characterised by a crystal matrix
    • H01S3/1666—Solid materials characterised by a crystal matrix borate, carbonate, arsenide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention provides a multi-wavelength all-solid-state yellow-light laser. The multi-wavelength all-solid-state Raman frequency multiplication yellow-light laser comprises a pumping source, an optical coupling system and a resonant cavity, wherein the resonant cavity comprises an input mirror, a Yb:GdAl3(BO3)4 crystal, an Q-switched element, a KGd(WO4)2 Raman crystal, a nonlinear crystal and an output mirror arranged in sequence. The pumping source is used for pumping the dual-wavelength laser crystal Yb:GdAl3(BO3)4 and the Q-switched element to generate short-pulse dual-wavelength fundamental frequency optical oscillation, and then two kinds of multi-wavelength yellow-light laser output schemes are realized based on the characteristic that the KGd(WO4)2 crystal has two Raman displacement spectral lines; according to the first scheme, frequency multiplication lights with output wavelengths of 566nm, 578nm and 572nm are output; and according to the second scheme, frequency multiplication lights with output wavelengths of 575nm, 569nm and 572nm are output. The laser has the advantages of compact structure, stability and high efficiency, so that the shortcoming that the existing yellow-light laser has a single wavelength is overcome.

Description

A kind of multi-wavelength all-solid-state yellow laser
Technical field
The present invention relates to laser field, particularly relate to one and in same chamber, realize two base ripples by one piece of dual-wavelength laser crystal, and a rank Stokes Raman light of four wavelength is exported by the Raman crystal with two gain spectrums, and the frequency doubled light being positioned at yellow band produced by nonlinear crystal by the laser of these four wavelength with and light frequently, it is achieved the laser apparatus of the multi-wavelength that multi-wavelength yellow laser exports.
Background technology
The laser of yellow band has a wide range of applications close to the most responsive wavelength (555nm) of people's eye, the laser radiation of this wave band in fields such as biomedical, space target detection and identification, radar, laser display, chemistry. But suitable gain medium can directly not produce yellow laser at present, it thus is seen that, the generation of yellow laser is a difficult problem of current laser circle. Most technology producing all-solid-state yellow realizes the laser near 1064nm by the gain medium of a semiconductor pumped Nd ion doped at present, and realize, by Raman crystal, the rank Stokes Raman light that wavelength is 1100-1200nm, then realize, by non-linear optic crystal, the frequency doubling yellow output that wavelength is 550-600nm wave band.
Summary of the invention
The present invention is directed to the deficiency that the wavelength of current yellow raman laser existence is single, it provides a kind of compact construction, efficient, stable multi-wavelength all-solid-state yellow laser.
The multi-wavelength all-solid-state yellow laser of the present invention, adopts following technical scheme:
This multi-wavelength all-solid-state yellow laser is made up of pumping source, optical coupling system and resonator cavity, and resonator cavity comprises input mirror, Yb:GdAl3(BO3)4Crystal, Q switched element, KGd (WO4)2Raman crystal, nonlinear crystal, output mirror are arranged in order composition. Yb:GdAl3(BO3)4Crystal, KGd (WO4)2The two ends of crystal and nonlinear crystal are all coated with the anti-reflection film of 950-1200nm, 550-600nm wave band, input mirror is coated with 950-980 high transmittance film, 1040-1200nm and 550-600nm high-reflecting film, exports mirror and is coated with 1040-1200nm high-reflecting film and 550-600nm anti-reflection film.
Semiconductor pump spectrum light is by focusing on crystals by input mirror after optical coupling system, and to realize wavelength by Q switched element be the two polarization dual-wavelength fundamental frequency light of the short pulse near 1042nm and 1047nm, the fundamental frequency light of these two wavelength is by having the KGd (WO of two raman gain spectrum line4)2(gain shifting is 768cm to crystal-1And 901cm-1), form raman laser, rotate KGd (WO by 90 ��4)2Crystal has two kinds of matching ways, is that 1042nm mates 768cm respectively-1, 1047nm mate 901cm-1901cm is mated with 1042nm-1, 1047nm mate 768cm-1These two kinds couplings form two kinds of two polarization dual-wavelengths outputs of 1133nm, 1156nm and 1150nm, 1138nm respectively, again by nonlinear crystal (adopting the crystal such as LBO, KTP of noncritical phase matching cutting), realize two kinds of wavelength Raman optical sccond-harmonic generation Laser outputs, the first be frequency doubled light 566nm, 578nm and and frequently 572nm laser, the 2nd kind be frequency doubled light 575nm, 569nm and and frequency 572nm laser.
Present invention employs Yb:GdAl3(BO3)4Dual-wavelength laser crystal, in conjunction with the KGd (WO of two raman gain spectrum line4)2Crystal, it is achieved that in chamber, the mode of Raman frequency doubling creates the transmitting of multiple yellow wave band of laser spectrum line, has compact construction, efficient, stable advantage.
Accompanying drawing explanation
Fig. 1 is the structural representation of the full-solid state Raman frequency doubling yellow laser apparatus of the present invention.
Wherein: 1, pump light source, 2, optical coupling system, 3, input mirror, 4, Yb:GdAl3(BO3)4Laser crystals, 5, Q switched element, 6, Raman crystal KGd (WO4)2, 7, nonlinear crystal 8, export mirror
Embodiment
Embodiment 1
As shown in Figure 1, the full-solid state Raman frequency doubling yellow laser apparatus of the present invention, comprises pump light source 1, optical coupling system 2, input mirror 3, two polarization dual-wavelength Yb:GdAl3(BO3)4Laser crystals 4, Q switched element 5, KGd (WO4)2Raman crystal 6, LBO non-linear optic crystal 7, output mirror 8.
Pump light source adopts wavelength to be the semiconductor laser of 976nm, and the coupling parameter of optical coupling system is 1:1, and input mirror plated film is 950-980 high transmittance film, 1040-1200nm and 550-600nm high-reflecting film, Yb:GdAl3(BO3)4The optical direction of crystal is b direction, and c axle is positioned over horizontal direction, and Q switched element can adopt electric-optically Q-switched, acousto-optic Q modulation or passive Q-adjusted etc., draws graceful KGd (WO4)2The optical direction that is placed as of crystal is Np axle, and vertical direction is Nm axle, and horizontal direction is Ng axle, and LBO adopts noncritical phase matching cutting, Yb:GdAl3(BO3)4��KGd(WO4)2, LBO all plate the anti-reflection film of 950-1200nm, 550-600nm wave band, exporting mirror plated film is 1040-1200nm high-reflecting film and 550-600nm anti-reflection film.
Yb:GdAl in the present embodiment3(BO3)4Crystalline size be 3 �� 3 �� 2mm3, KGd (WO4)2Crystalline size is 5 �� 5 �� 24mm3, LBO is of a size of 5 �� 5 �� 2mm3, these crystal can also change other various types of sizes into according to real needs.
Cavity configuration in the present embodiment is straight chamber, and length is 70mm, changes cavity configuration or other sizes of other types into according to real needs.
In the present embodiment, semiconductor pump spectrum light is by focusing on crystals by input mirror after optical coupling system, realizing wavelength is the two polarization dual-wavelength fundamental frequency light near 1042nm and 1047nm, and the fundamental frequency light of these two wavelength is by having the KGd (WO of two raman gain spectrum line4)2Crystal formation raman laser, its wavelength is respectively 1133nm, 1156nm, then is realized 566nm, 578nm and and the Laser output of frequently light 572nm by non-linear lbo crystal.
Above-mentioned laser apparatus, when pump energy is 2W, obtains the Laser output of the 572nm of 578nm and 42mW of 566nm, 135mW of 102mW.
Embodiment 2
The light path of the present embodiment arranges identical with embodiment 1, only by Yb:GdAl3(BO3)4Crystal or KGd (WO4)2Crystal is that axle rotates 90 �� taking optical direction.
In the present embodiment, semiconductor pump spectrum light is by focusing on crystals by input mirror after optical coupling system, realizing wavelength is the two polarization dual-wavelength fundamental frequency light near 1042nm and 1047nm, and the fundamental frequency light of these two wavelength is by having the KGd (WO of two raman gain spectrum line4)2Crystal formation raman laser, its wavelength is respectively 1150nm, 1138nm, then is realized 575nm, 569nm and and the Laser output of frequently light 572nm by non-linear lbo crystal.
Above-mentioned laser apparatus, when pump energy is 2W, obtains the Laser output of the 572nm of 569nm and 54mW of 575nm, 189mW of 142mW.

Claims (5)

1. a multi-wavelength all-solid-state yellow laser, comprises pumping source, optical coupling system and resonator cavity, it is characterised in that adopt Yb:GdAl3(BO3)4The two polarization laser of short pulse dual wavelength is produced with Q switched element, then by having the KGd (WO of two raman gain spectrum line4)2Crystal produces a rank Stokes Raman light and produces the yellow light of multi-wavelength by nonlinear crystal frequency multiplication or with frequency again.
2. multi-wavelength all-solid-state yellow laser as claimed in claim 1, it is characterised in that described resonator cavity is successively by input mirror, Yb:GdAl3(BO3)4Crystal, Q switched element, KGd (WO4)2Raman crystal, nonlinear crystal, output mirror rearrange.
3. multi-wavelength all-solid-state yellow laser as claimed in claim 2, it is characterised in that, described Q switched element can adopt the Q switched element of acousto-optic Q modulation, electric-optically Q-switched, passive Q-adjusted or other types.
4. multi-wavelength all-solid-state yellow laser as claimed in claim 2, it is characterised in that, described nonlinear crystal can adopt LBO, KTP, BBO or other nonlinear crystals.
5. all-solid-state yellow laser as claimed in claim 1 or 2, it is characterised in that be that 90 ��, axle rotates Yb:GdAl taking optical direction3(BO3)4Crystal or KGd (WO4)2Crystal can realize the yellow light scheme of two kinds of multi-wavelengths, and a kind of output wavelength is 566nm, 578nm and 572nm, and another is 575nm, 569nm and 572nm.
CN201610185994.8A 2016-03-29 2016-03-29 Multi-wavelength all-solid-state yellow-light laser Pending CN105633786A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106558829A (en) * 2017-01-11 2017-04-05 中国科学院上海光学精密机械研究所 Based on the double Raman media in common chamber and the 589nm laser instrument of laser and frequency
CN106785881A (en) * 2017-01-11 2017-05-31 中国科学院上海光学精密机械研究所 589nm lasers based on Raman frequency conversion and laser and frequency
CN107394577A (en) * 2017-08-16 2017-11-24 中国科学院福建物质结构研究所 Infrared all solid state laser in one kind
CN109286127A (en) * 2018-12-14 2019-01-29 烟台大学 High-power 577nm-579nm solid Roman Yellow light laser
CN109950779A (en) * 2019-04-17 2019-06-28 温州大学 Five wavelength laser sources for the treatment of laser fundus photocoagulation
JP2020188250A (en) * 2019-05-16 2020-11-19 ライトメッド コーポレーションＬｉｇｈｔｍｅｄ Ｃｏｒｐｏｒａｔｉｏｎ High power multi-wavelength visible light raman laser
CN114389128A (en) * 2021-12-31 2022-04-22 苏州英谷激光有限公司 High-power continuous laser with wavelength of 532nm-559nm-588nm from Raman

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CN103618206A (en) * 2013-11-28 2014-03-05 清华大学 Full-solid-state single longitudinal mode yellow light laser
CN104821482A (en) * 2015-05-19 2015-08-05 山东大学 Quasi-continuous 589nm laser based on crystal Raman technology and application thereof

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CN103618206A (en) * 2013-11-28 2014-03-05 清华大学 Full-solid-state single longitudinal mode yellow light laser
CN104821482A (en) * 2015-05-19 2015-08-05 山东大学 Quasi-continuous 589nm laser based on crystal Raman technology and application thereof

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106785881A (en) * 2017-01-11 2017-05-31 中国科学院上海光学精密机械研究所 589nm lasers based on Raman frequency conversion and laser and frequency
CN106558829B (en) * 2017-01-11 2018-11-20 中国科学院上海光学精密机械研究所 589nm laser based on the double Raman media of total chamber and laser and frequency
CN106785881B (en) * 2017-01-11 2019-03-08 中国科学院上海光学精密机械研究所 589nm laser based on Raman frequency conversion and laser and frequency
CN106558829A (en) * 2017-01-11 2017-04-05 中国科学院上海光学精密机械研究所 Based on the double Raman media in common chamber and the 589nm laser instrument of laser and frequency
CN107394577B (en) * 2017-08-16 2019-09-20 中国科学院福建物质结构研究所 Infrared all solid state laser in one kind
CN107394577A (en) * 2017-08-16 2017-11-24 中国科学院福建物质结构研究所 Infrared all solid state laser in one kind
CN109286127A (en) * 2018-12-14 2019-01-29 烟台大学 High-power 577nm-579nm solid Roman Yellow light laser
CN109950779A (en) * 2019-04-17 2019-06-28 温州大学 Five wavelength laser sources for the treatment of laser fundus photocoagulation
CN109950779B (en) * 2019-04-17 2024-05-10 温州大学 Five-wavelength laser light source for laser fundus photocoagulation treatment
JP2020188250A (en) * 2019-05-16 2020-11-19 ライトメッド コーポレーションＬｉｇｈｔｍｅｄ Ｃｏｒｐｏｒａｔｉｏｎ High power multi-wavelength visible light raman laser
US11316317B2 (en) 2019-05-16 2022-04-26 Lightmed Corporation High power and multiple wavelength Raman laser of visible light
JP7097919B2 (en) 2019-05-16 2022-07-08 ライトメッド コーポレーション A method for producing high power multi-wavelength visible laser light
CN114389128A (en) * 2021-12-31 2022-04-22 苏州英谷激光有限公司 High-power continuous laser with wavelength of 532nm-559nm-588nm from Raman

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Application publication date: 20160601